Classifications

• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
  • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
  • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02M7/483—Converters with outputs that each can have more than two voltages levels
  • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
  • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
  • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02M7/483—Converters with outputs that each can have more than two voltages levels
  • H02M7/49—Combination of the output voltage waveforms of a plurality of converters
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
  • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
  • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
  • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
  • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
  • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M1/00—Details of apparatus for conversion
  • H02M1/32—Means for protecting converters other than automatic disconnection
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
  • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
  • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
  • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02M7/4826—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode operating from a resonant DC source, i.e. the DC input voltage varies periodically, e.g. resonant DC-link inverters

Definitions

• Submodule with current impulse limitation The invention relates to a submodule for a modular
• Such a submodule is already known, for example, from DE 101 03 031 B4.
• the converter described there is shown once again in FIG. It can be seen that the converter 1 has three phase modules 2, 3 and 4, each extending between two different polarity DC voltage terminals 6 and 7.
• each of the phase modules has an AC voltage terminal 8.
• To the AC voltage terminal 8 is connected via a transformer 5 a figuratively not shown AC voltage network.
• a phase module branch 9 Between the AC voltage terminal 8 and each DC voltage connection 6 and 7 of each submodule extends a phase module branch 9, wherein in each phase module branch 9, a series connection of two-pole submodules 10 is arranged.
• each submodule 10 has an energy store 11 in the form of a unipolar DC link capacitor C ZK .
• the DC link capacitor C ZK is a series circuit 11 of two series-connected switched on and off power semiconductor switches ⁇ and T 2 connected in parallel.
• Each of the power semiconductor switches ⁇ and T 2 is a freewheeling diode Di and D 2 connected in parallel opposite directions.
• the potential point lying between the power semiconductor switches Ti and T 2 is connected to a first terminal 12, wherein the other end terminal 13 of the submodule 10 is connected directly to a pole of the energy storage C ZK .
• the power semiconductor switches Ti and T 2 can be switched on and off via their control lines (not shown) at their so-called gate connection, so that the submodule 10 can be switched back and forth between different switching states.
• a first switching state in which, for example, the power semiconductor switch Tl on, but the power semiconductor switch T2 is turned off, falls at the Submodulan gleich- terminals 12 and 13, the voltage applied to the energy storage C ZK voltage.
• the second switching state the submodule connection terminals 12 and 13 are conductively connected to one another via the switched-on power semiconductor switch T 2 , so that a zero voltage drops at the submodule connection terminals 12, 13.
• both power semiconductor switches ⁇ and T 2 fail in a submodule according to FIG. 2, a so-called cross-igniter occurs, in which the energy store C ZK discharges into the fault location.
• the current increase is limited only by the parasitic inductances and can assume values of many hundreds of kiloamps. Currents of this magnitude can lead to considerable destruction.
• the case of the power semiconductor switches may burst and explosive gases may be generated as a result of an arc.
• the destruction of a submodule can also damage neighboring submodules, so that there is a risk of chain reaction.
• the object of the invention is therefore to provide a submodule of the type mentioned above, which enables a cost-effective submodule housing with the same energy storage capacity or which has a comparatively increased energy storage capacity for a given housing, without thereby eroding the protection provided by the submodule housing.
• the invention achieves this object by virtue of the fact that the power semiconductor circuit is connected in parallel with an energy storage branch in which the energy store and current impulse limiting means are arranged.
• surge current limiting means are arranged in the submodule which, in the event of a fault, reduce the intensity of a current surge during a discharge of the energy store.
• the current impulse limiting means are arranged in series with the energy store. They have the property that they reduce the discharge currents arising in the event of a sudden discharge of the energy store, for example in the event of a short circuit. Therefore, the capacity of the energy storage can be increased without the risk of
• Destruction of the submodule housing is. Of course, it is within the scope of the invention also possible to form the housing less firmly, if the capacity of the energy storage needs to be increased according to the requirements, but remains constant.
• commutation means are advantageously provided which, when the switching state of the power semiconductor circuit changes, support a commutation of the currents flowing via the submodule.
• the Kommut ists- be the fact that due to the current impulse limiting means in series connection to the energy storage no low-inductance Kommut michsnik more for during the operation induced switching operations is present.
• the commutation supported the said commutation, so that a normal switching of the submodule despite
• the power semiconductor circuit is a series circuit of two switched on and off power semiconductor switches, wherein the first terminal is connected to the potential point between the power semiconductor switches and the second terminal directly to the energy storage branch.
• the second terminal is connected either via the current impulse limiting means to the energy storage or directly to a pole of the energy store.
• the second connection terminal is connected to the current surge limiting means via the energy store.
• the current impulse limiting means are designed as a throttle, fuse and / or resistor.
• the resistor can be a linear resistor or a non-linear resistor. If only a fuse is used as the current impulse limiting means, this is to be designed as a high-voltage component and is therefore designed to have sufficient space.
• the parasitic inductances occurring during a current flow across the fuse provide for a sufficiently large current impulse limit until finally the fuse effectively interrupts the current flow at the end of the melting process. For currents that are not too strong, a low-inductive commutation path is provided via the fuse. The Fuse is therefore also a commutation.
• the commutation means comprise a commutation capacitor connected to the power semiconductor circuit and connected in parallel with the energy storage branch.
• the commutation capacitor has a significantly lower capacity compared to the energy store, which is for example an intermediate circuit capacitor. It merely provides the conditions for causing a fast commutation of the currents when switching the power semiconductor circuit.
• the commutation means have a resistance, which is arranged parallel to the current impulse limiting means in the energy storage branch.
• the resistor is arranged parallel to the current impulse limiting means, for example parallel to a choke, and when suitably designed, it alone also provides the conditions necessary for the commutation.
• the said resistor is used together with a commutation capacitor, which is connected in a low-inductance manner to the power semiconductor circuit.
• the commutation means comprise a diode which is arranged parallel to the current impulse limiting means in the energy storage branch. Again, the diode can be used both with and without an additional commutation capacitor.
• the commutation means comprise a switching capacitor, which is arranged parallel to the current impulse limiting means in the energy storage branch.
• the switching capacitor can be arranged both parallel to the current-surge limiting means, for example to a choke, and to a diode and / or to a resistor.
• the invention also relates to a converter branch for a modular multi-stage converter having a series connection of two-pole submodules of the above-mentioned type.
• the invention also includes a converter, which is equipped with such converter branches.
• Figure 1 shows an embodiment of a modular
• FIG. 2 shows a submodule for a modular multi-stage converter according to FIG. 1,
• FIG. 3 shows an exemplary embodiment of a submodule according to the invention
• FIG. 4 shows an exemplary embodiment of a submodule according to the invention
• FIG. 5 shows an exemplary embodiment of a submodule according to the invention
• FIG. 6 shows an exemplary embodiment of a submodule according to the invention
• FIG. 7 shows an exemplary embodiment of a submodule according to the invention
• FIG. 8 shows an embodiment of a submodule according to the invention
• Figure 9 show an embodiment of a submodule according to the invention.
• FIG. 1 and FIG. 2 have already been acknowledged in connection with the state of the art presented in detail at the outset.
• FIG. 3 shows a submodule 14 which corresponds as far as possible to the previously known submodule 10 shown in FIG. 2 with regard to the design of the power semiconductor circuit.
• the submodule 14 according to FIG. 3 also has a series circuit 11 consisting of two power semiconductor switches ⁇ and T 2 , both of which are shown here as IGBTs.
• IGBTs power semiconductor switches
• GTOs or IGCTs switched on and off power semiconductor switches
• a first connection terminal 12 is connected to the potential point between the power semiconductor switches ⁇ and T 2 .
• the second terminal 13 is not - as in Figure 2 - connected directly to a pole of the energy storage. Rather, the submodule 14 according to Figure 3, an energy storage branch 15, in which the energy storage in the form of a DC link capacitor C ZK and a throttle 16 are arranged as surge current limiting means in series. The second terminal is connected via the throttle 16 with the energy storage C ZK and is thus directly to the energy storage branch 15an.
• a commutation capacitor C K is provided, which is arranged parallel to the power semiconductor circuit 11 and parallel to the energy storage branch 15.
• the commutation capacitor C K is connected directly, ie, in a low-inductance manner, to the power semiconductor circuit 11, that is to say here the series circuit comprising ⁇ and T 2 . It has a much smaller capacity than the intermediate circuit capacitor C ZK - Due to the choke 16 are in a spontaneous discharge due to errors of performance tion semiconductor switch i and T 2 high surge currents through the throttle 16 avoided. At the same time, the commutation capacitor C K ensures reliable commutation of the switching currents.
• FIG. 4 shows a further exemplary embodiment of the submodule according to the invention, which differs from the exemplary embodiment shown in FIG. 3 in that the commutation means comprise a resistance 17 in addition to the commutation capacitor C K which is connected in parallel to the throttle 16 into the energy storage branch 15.
• the ohmic resistor 17 makes it possible for high-frequency currents, for example during transient processes, to flow via the energy storage branch 15. As a result, the ohmic resistor 17 supports the commutation.
• FIG. 6 shows a further exemplary embodiment of the invention, which corresponds to that of FIG. 3, but instead of a throttle 16, a safety fuse 18 is used as surge current limiting means in the energy storage branch 15.
• a safety fuse 18 is used as surge current limiting means in the energy storage branch 15.
• Fuse 18 designed for the high voltage and thus to be understood as a large-area component. It therefore has a sufficiently large inductance to effectively dampen surge currents.
• the commutation capacitor C K is used , which is connected in a low-inductance manner to the power semiconductor circuit 11.
• FIG. 7 shows an exemplary embodiment according to FIG. 6, wherein, however, the commutation capacitor has been dispensed with. Despite its parasitic inductance ensures the fuse at low currents for sufficient commutation when switching ⁇ and T 2 .
• this resistor is a nonlinear resistor with a non-linear characteristic, having a low resistance at low current and a high resistance at high current.
• a resistor having a positive temperature coefficient of the resistance value may be used.
• the commutation means comprise a diode 19, which is arranged in parallel connection with the throttle 16 in the energy storage branch 15.
• a snubber capacitor C B is provided, which also supports the commutation.
• the Besclienskondensator C B has an even smaller capacity than the commutation capacitor C K and a much smaller capacity than the DC link capacitor C ZK .
• the Besclienskondensator C B is omitted.
• the commutation comprise only the diode 19 in parallel with the throttle 16 in the energy storage branch 15 and a commutation capacitor C K , which is low-inductively connected to the series circuit 11 of the power semiconductor circuit Tl and T2.
• FIG. 9 shows a further exemplary embodiment of the invention, which largely corresponds to the exemplary embodiment shown in FIG. 8, but omits the commutation capacitor C K.
• the commutation means therefore comprise only the diode 19 and the snubber capacitor C B.
• the diode 19 has, moreover, a forward direction which is opposite to that of the free-wheeling diodes D 1 and D 2.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Inverter Devices (AREA)
• Power Conversion In General (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=47522493

Family Applications (1)

Country Status (4)

Families Citing this family (5)

Family Cites Families (16)

• 2012
  • 2012-12-10 US US14/650,913 patent/US20150318690A1/en not_active Abandoned
  • 2012-12-10 CN CN201280077268.4A patent/CN104813578A/zh active Pending
  • 2012-12-10 EP EP12812898.0A patent/EP2907233A1/de not_active Withdrawn
  • 2012-12-10 WO PCT/EP2012/074916 patent/WO2014090272A1/de active Application Filing

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