EP2903026A4 - Radiation detection element and radiograph detection device - Google Patents

Radiation detection element and radiograph detection device

Info

Publication number
EP2903026A4
EP2903026A4 EP13840886.9A EP13840886A EP2903026A4 EP 2903026 A4 EP2903026 A4 EP 2903026A4 EP 13840886 A EP13840886 A EP 13840886A EP 2903026 A4 EP2903026 A4 EP 2903026A4
Authority
EP
European Patent Office
Prior art keywords
radiograph
detection device
radiation
detection element
radiation detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13840886.9A
Other languages
German (de)
French (fr)
Other versions
EP2903026B1 (en
EP2903026A1 (en
Inventor
Yoshihiro Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of EP2903026A1 publication Critical patent/EP2903026A1/en
Publication of EP2903026A4 publication Critical patent/EP2903026A4/en
Application granted granted Critical
Publication of EP2903026B1 publication Critical patent/EP2903026B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0272—Selenium or tellurium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
EP13840886.9A 2012-09-28 2013-09-27 Radiation detection element and radiograph detection device Active EP2903026B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012218426 2012-09-28
PCT/JP2013/076421 WO2014051118A1 (en) 2012-09-28 2013-09-27 Radiation detection element and radiograph detection device

Publications (3)

Publication Number Publication Date
EP2903026A1 EP2903026A1 (en) 2015-08-05
EP2903026A4 true EP2903026A4 (en) 2016-05-11
EP2903026B1 EP2903026B1 (en) 2017-10-25

Family

ID=50388507

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13840886.9A Active EP2903026B1 (en) 2012-09-28 2013-09-27 Radiation detection element and radiograph detection device

Country Status (6)

Country Link
US (1) US9651685B2 (en)
EP (1) EP2903026B1 (en)
JP (1) JP5770945B2 (en)
CN (1) CN104685629B (en)
TW (1) TWI655755B (en)
WO (1) WO2014051118A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6138754B2 (en) * 2014-03-03 2017-05-31 富士フイルム株式会社 Radiographic imaging system, radiographic imaging device, radiographic imaging device control method, and radiographic imaging device control program
KR102347817B1 (en) * 2015-07-02 2022-01-10 삼성디스플레이 주식회사 Display apparatus
JP2017098830A (en) * 2015-11-26 2017-06-01 キヤノン株式会社 Radiation imaging device, radiation imaging system, and manufacturing method of radiation imaging device
WO2018123907A1 (en) * 2016-12-27 2018-07-05 シャープ株式会社 Imaging panel and production method for same
CN107507843B (en) * 2017-06-05 2020-05-08 上海奕瑞光电子科技股份有限公司 Pixel structure and X-ray image sensor
EP3699613A1 (en) * 2017-10-18 2020-08-26 Sony Semiconductor Solutions Corporation Charge detection sensor and potential measuring system
CN109087927B (en) * 2018-08-15 2021-01-29 京东方科技集团股份有限公司 Array substrate, X-ray detection panel and X-ray detection device
US11353759B2 (en) * 2018-09-17 2022-06-07 Nuclera Nucleics Ltd. Backplanes with hexagonal and triangular electrodes
KR102659426B1 (en) * 2018-12-27 2024-04-19 엘지디스플레이 주식회사 Digital x-ray detector
CN110324548B (en) * 2019-06-27 2021-11-09 Oppo广东移动通信有限公司 Pixel unit circuit, signal processing method and storage medium
FR3117268B1 (en) * 2020-12-08 2022-12-09 St Microelectronics Crolles 2 Sas Pixel of a light sensor and method of manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003255049A (en) * 2002-03-06 2003-09-10 Canon Inc Light-detecting apparatus and radiation-detecting apparatus
US20070177044A1 (en) * 2006-01-27 2007-08-02 Shunsuke Maruyama Solid-state image pickup device
US20110121189A1 (en) * 2009-11-20 2011-05-26 Fujifilm Corporation Radiation detector
US20110174957A1 (en) * 2010-01-15 2011-07-21 Fujifilm Corporation Radiation detection element
EP2743986A1 (en) * 2011-08-12 2014-06-18 FUJIFILM Corporation Radiation detection element, radiograph detection panel, and radiograph detection device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4264251B2 (en) * 2002-12-09 2009-05-13 富士フイルム株式会社 Solid-state imaging device and operation method thereof
JP5043380B2 (en) * 2005-07-25 2012-10-10 キヤノン株式会社 Radiation detection apparatus and radiation detection system
JP4832034B2 (en) * 2005-09-14 2011-12-07 富士フイルム株式会社 MOS image sensor
US7880787B2 (en) 2005-09-14 2011-02-01 Fujifilm Corporation MOS image sensor
JP2007081139A (en) * 2005-09-14 2007-03-29 Fujifilm Corp Mos image sensor
US20100059753A1 (en) * 2006-06-16 2010-03-11 Silk Displays Matrix electronic devices using opaque substrates and fabrication method therefor
US7965326B2 (en) * 2006-09-27 2011-06-21 Fujifilm Corporation Semiconductor element, method of driving semiconductor element and solid imaging apparatus
JP2008198910A (en) * 2007-02-15 2008-08-28 Fujifilm Corp Radiation image detection device and its manufacturing method
JP2013068472A (en) * 2011-09-21 2013-04-18 Fujifilm Corp Radiation detection element, radiation image detection panel, and radiation image imaging apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003255049A (en) * 2002-03-06 2003-09-10 Canon Inc Light-detecting apparatus and radiation-detecting apparatus
US20070177044A1 (en) * 2006-01-27 2007-08-02 Shunsuke Maruyama Solid-state image pickup device
US20110121189A1 (en) * 2009-11-20 2011-05-26 Fujifilm Corporation Radiation detector
US20110174957A1 (en) * 2010-01-15 2011-07-21 Fujifilm Corporation Radiation detection element
EP2743986A1 (en) * 2011-08-12 2014-06-18 FUJIFILM Corporation Radiation detection element, radiograph detection panel, and radiograph detection device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2014051118A1 *

Also Published As

Publication number Publication date
TW201419510A (en) 2014-05-16
EP2903026B1 (en) 2017-10-25
JP5770945B2 (en) 2015-08-26
TWI655755B (en) 2019-04-01
US20160178763A1 (en) 2016-06-23
JPWO2014051118A1 (en) 2016-08-25
WO2014051118A1 (en) 2014-04-03
US9651685B2 (en) 2017-05-16
EP2903026A1 (en) 2015-08-05
CN104685629B (en) 2016-04-06
CN104685629A (en) 2015-06-03

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