EP2831917A4 - Oxide-nitride-oxide stack having multiple oxynitride layers - Google Patents
Oxide-nitride-oxide stack having multiple oxynitride layersInfo
- Publication number
- EP2831917A4 EP2831917A4 EP13767422.2A EP13767422A EP2831917A4 EP 2831917 A4 EP2831917 A4 EP 2831917A4 EP 13767422 A EP13767422 A EP 13767422A EP 2831917 A4 EP2831917 A4 EP 2831917A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- oxide
- nitride
- oxynitride layers
- stack
- multiple oxynitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20167516.2A EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP18213095.5A EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/436,872 US9449831B2 (en) | 2007-05-25 | 2012-03-31 | Oxide-nitride-oxide stack having multiple oxynitride layers |
PCT/US2013/032339 WO2013148343A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18213095.5A Division EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP20167516.2A Division EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2831917A1 EP2831917A1 (en) | 2015-02-04 |
EP2831917A4 true EP2831917A4 (en) | 2015-11-04 |
Family
ID=49261089
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20167516.2A Pending EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP13767422.2A Ceased EP2831917A4 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP18213095.5A Withdrawn EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20167516.2A Pending EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18213095.5A Withdrawn EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Country Status (6)
Country | Link |
---|---|
EP (3) | EP3709370A1 (en) |
JP (2) | JP6709051B2 (en) |
KR (2) | KR102220842B1 (en) |
CN (2) | CN111180525B (en) |
TW (2) | TWI615948B (en) |
WO (1) | WO2013148343A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090179253A1 (en) | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8633537B2 (en) | 2007-05-25 | 2014-01-21 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US9449831B2 (en) | 2007-05-25 | 2016-09-20 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8940645B2 (en) | 2007-05-25 | 2015-01-27 | Cypress Semiconductor Corporation | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
JP6422430B2 (en) * | 2012-03-27 | 2018-11-14 | サイプレス セミコンダクター コーポレーション | Non-planar memory device and method for manufacturing semiconductor device |
JP6709051B2 (en) * | 2012-03-31 | 2020-06-10 | ロンギチュード フラッシュ メモリー ソリューションズ リミテッド | Oxide-nitride-oxide laminate with multi-layer oxynitride layer |
JP6306233B1 (en) * | 2017-02-28 | 2018-04-04 | ウィンボンド エレクトロニクス コーポレーション | Flash memory and manufacturing method thereof |
SG11201912263VA (en) * | 2017-08-01 | 2020-01-30 | Illumina Inc | Field effect sensors |
WO2023010564A1 (en) * | 2021-08-06 | 2023-02-09 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing thereof |
CN114038918A (en) * | 2021-11-08 | 2022-02-11 | 珠海创飞芯科技有限公司 | Memory cell, manufacturing method of memory cell and memory |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080054346A1 (en) * | 2006-09-01 | 2008-03-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20110248332A1 (en) * | 2007-05-25 | 2011-10-13 | Sagy Levy | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers |
US8222688B1 (en) * | 2009-04-24 | 2012-07-17 | Cypress Semiconductor Corporation | SONOS stack with split nitride memory layer |
WO2013148112A1 (en) * | 2012-03-27 | 2013-10-03 | Cypress Semiconductor Corporation | Sonos stack with split nitride memory layer |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348903A (en) * | 1992-09-03 | 1994-09-20 | Motorola Inc. | Process for fabricating a semiconductor memory cell having thin-film driver transistors overlapping dual wordlines |
JPH07153769A (en) * | 1993-11-30 | 1995-06-16 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device and its manufacturing equipment |
EP0801427A3 (en) * | 1996-04-11 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device |
JP4617574B2 (en) * | 2001-01-16 | 2011-01-26 | ソニー株式会社 | Nonvolatile semiconductor memory device and manufacturing method thereof |
KR100395762B1 (en) * | 2001-07-31 | 2003-08-21 | 삼성전자주식회사 | Non-volatile memory device and method of fabricating the same |
US6709928B1 (en) * | 2001-07-31 | 2004-03-23 | Cypress Semiconductor Corporation | Semiconductor device having silicon-rich layer and method of manufacturing such a device |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
KR100790859B1 (en) * | 2002-11-15 | 2008-01-03 | 삼성전자주식회사 | Nonvolatile memory device utilizing vertical nanotube |
JP4489359B2 (en) * | 2003-01-31 | 2010-06-23 | 株式会社ルネサステクノロジ | Nonvolatile semiconductor memory device |
US7452778B2 (en) * | 2004-06-10 | 2008-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-wire devices and methods of fabrication |
US7612403B2 (en) * | 2005-05-17 | 2009-11-03 | Micron Technology, Inc. | Low power non-volatile memory and gate stack |
JP2009535800A (en) * | 2006-04-26 | 2009-10-01 | エヌエックスピー ビー ヴィ | Nonvolatile memory device |
JP2008034456A (en) * | 2006-07-26 | 2008-02-14 | Toshiba Corp | Nonvolatile semiconductor memory device |
US8772858B2 (en) * | 2006-10-11 | 2014-07-08 | Macronix International Co., Ltd. | Vertical channel memory and manufacturing method thereof and operating method using the same |
KR100890040B1 (en) * | 2006-10-23 | 2009-03-25 | 주식회사 하이닉스반도체 | Non-volatile memory device having charge trapping layer and method of fabricating the same |
US8283261B2 (en) * | 2007-05-25 | 2012-10-09 | Cypress Semiconductor Corporation | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
US8067284B1 (en) * | 2007-05-25 | 2011-11-29 | Cypress Semiconductor Corporation | Oxynitride bilayer formed using a precursor inducing a high charge trap density in a top layer of the bilayer |
US8063434B1 (en) * | 2007-05-25 | 2011-11-22 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US20090179253A1 (en) * | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
JP2009027134A (en) * | 2007-06-21 | 2009-02-05 | Tokyo Electron Ltd | Mos semiconductor memory device |
US20110012090A1 (en) * | 2007-12-07 | 2011-01-20 | Agency For Science, Technology And Research | Silicon-germanium nanowire structure and a method of forming the same |
JP2009252774A (en) * | 2008-04-01 | 2009-10-29 | Toshiba Corp | Semiconductor memory and its fabrication process |
JP2009272348A (en) | 2008-04-30 | 2009-11-19 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
JP2009295694A (en) * | 2008-06-03 | 2009-12-17 | Toshiba Corp | Non-volatile semiconductor storage device and manufacturing method thereof |
JP2010016228A (en) * | 2008-07-04 | 2010-01-21 | Toshiba Corp | Nonvolatile semiconductor storage device and method of forming the same |
EP2297782A1 (en) * | 2008-07-09 | 2011-03-23 | QuNano AB | Nanostructured memory device |
JP5356005B2 (en) * | 2008-12-10 | 2013-12-04 | 株式会社東芝 | Nonvolatile semiconductor memory device and manufacturing method thereof |
JP5531259B2 (en) * | 2009-03-19 | 2014-06-25 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP2011035228A (en) | 2009-08-04 | 2011-02-17 | Toshiba Corp | Nonvolatile semiconductor storage device and method for manufacturing the same |
US8169835B2 (en) * | 2009-09-28 | 2012-05-01 | Macronix International Co., Ltd. | Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layer |
JP2011199194A (en) | 2010-03-23 | 2011-10-06 | Toshiba Corp | Method of manufacturing semiconductor device |
JP5514004B2 (en) * | 2010-06-15 | 2014-06-04 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
WO2011162725A1 (en) * | 2010-06-25 | 2011-12-29 | Agency For Science, Technology And Research | Nanowire transistor and method for manufacturing a nanowire transistor |
US8890233B2 (en) * | 2010-07-06 | 2014-11-18 | Macronix International Co., Ltd. | 3D memory array with improved SSL and BL contact layout |
KR101738103B1 (en) * | 2010-09-10 | 2017-05-22 | 삼성전자주식회사 | Therr dimensional semiconductor memory devices |
TWI534897B (en) | 2011-01-14 | 2016-05-21 | 賽普拉斯半導體公司 | Oxide-nitride-oxide stack having multiple oxynitride layers |
KR20110093746A (en) * | 2011-07-01 | 2011-08-18 | 고려대학교 산학협력단 | Device for 4 bit per cell non-volatile fusion memory of multi-function and method for fabricating thereof |
JP6709051B2 (en) * | 2012-03-31 | 2020-06-10 | ロンギチュード フラッシュ メモリー ソリューションズ リミテッド | Oxide-nitride-oxide laminate with multi-layer oxynitride layer |
-
2013
- 2013-03-15 JP JP2015503338A patent/JP6709051B2/en active Active
- 2013-03-15 EP EP20167516.2A patent/EP3709370A1/en active Pending
- 2013-03-15 KR KR1020207005846A patent/KR102220842B1/en active IP Right Grant
- 2013-03-15 CN CN202010010002.4A patent/CN111180525B/en active Active
- 2013-03-15 KR KR1020147025059A patent/KR102085388B1/en active IP Right Grant
- 2013-03-15 WO PCT/US2013/032339 patent/WO2013148343A1/en active Application Filing
- 2013-03-15 CN CN201380016893.2A patent/CN104321878A/en active Pending
- 2013-03-15 EP EP13767422.2A patent/EP2831917A4/en not_active Ceased
- 2013-03-15 EP EP18213095.5A patent/EP3537483A3/en not_active Withdrawn
- 2013-03-22 TW TW106107213A patent/TWI615948B/en active
- 2013-03-22 TW TW102110223A patent/TWI584450B/en active
-
2020
- 2020-01-06 JP JP2020000333A patent/JP7042852B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080054346A1 (en) * | 2006-09-01 | 2008-03-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20110248332A1 (en) * | 2007-05-25 | 2011-10-13 | Sagy Levy | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers |
US8222688B1 (en) * | 2009-04-24 | 2012-07-17 | Cypress Semiconductor Corporation | SONOS stack with split nitride memory layer |
WO2013148112A1 (en) * | 2012-03-27 | 2013-10-03 | Cypress Semiconductor Corporation | Sonos stack with split nitride memory layer |
Non-Patent Citations (1)
Title |
---|
See also references of WO2013148343A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2020074420A (en) | 2020-05-14 |
EP3537483A2 (en) | 2019-09-11 |
KR20140144181A (en) | 2014-12-18 |
TW201347151A (en) | 2013-11-16 |
CN111180525A (en) | 2020-05-19 |
EP3709370A1 (en) | 2020-09-16 |
TWI584450B (en) | 2017-05-21 |
JP7042852B2 (en) | 2022-03-28 |
WO2013148343A1 (en) | 2013-10-03 |
EP3537483A3 (en) | 2019-10-02 |
TWI615948B (en) | 2018-02-21 |
KR102085388B1 (en) | 2020-03-05 |
CN111180525B (en) | 2023-08-08 |
JP6709051B2 (en) | 2020-06-10 |
JP2015516678A (en) | 2015-06-11 |
KR20200024952A (en) | 2020-03-09 |
CN104321878A (en) | 2015-01-28 |
KR102220842B1 (en) | 2021-03-02 |
TW201724474A (en) | 2017-07-01 |
EP2831917A1 (en) | 2015-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201801386SA (en) | Encapsulation barrier stack | |
EP2831917A4 (en) | Oxide-nitride-oxide stack having multiple oxynitride layers | |
ZA201402225B (en) | Encapsulation barrier stack | |
PL2895328T3 (en) | Multilayered polyolefin-based films | |
EP2831916A4 (en) | Sonos stack with split nitride memory layer | |
PL2479131T3 (en) | Breakdown spool | |
EP2897194A4 (en) | Stacked type secondary battery | |
GB2499421B (en) | Ramp | |
EP2822931A4 (en) | Triazolone compounds and uses thereof | |
EP2863368A4 (en) | Banknote handling device | |
SG11201508534WA (en) | MAGNETIC STACK INCLUDING MgO-Ti(ON) INTERLAYER | |
AP2015008522A0 (en) | Preservatives | |
HK1199150A1 (en) | Stack assembly | |
HK1208874A1 (en) | Cyclosporin nalogs | |
HU4206U (en) | Multi purposal sportsdevice | |
EP2926986A4 (en) | Stacked composite component | |
TWI561393B (en) | Thin film stack | |
HK1216494A1 (en) | Wound clamp | |
EP2924795A4 (en) | Stepped electrode group stack | |
EP2860807A4 (en) | Fuel cell stack | |
SG11201402171PA (en) | Cable-gathering device (wire stacker) | |
EP2863369A4 (en) | Banknote handling device | |
EP3001389A4 (en) | Banknote stacking device | |
HK1212680A1 (en) | Triazolone compounds and uses thereof | |
EP2850667A4 (en) | Thin film stack |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20140916 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAX | Request for extension of the european patent (deleted) | ||
RA4 | Supplementary search report drawn up and despatched (corrected) |
Effective date: 20151002 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/51 20060101ALI20150928BHEP Ipc: H01L 29/66 20060101ALI20150928BHEP Ipc: H01L 29/792 20060101AFI20150928BHEP Ipc: B82Y 10/00 20110101ALI20150928BHEP Ipc: H01L 29/423 20060101ALI20150928BHEP Ipc: H01L 21/28 20060101ALI20150928BHEP Ipc: H01L 27/115 20060101ALI20150928BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20161021 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R003 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 20190216 |