EP2820388A1 - Infrarotsensor, wärmebildkamera und verfahren zum herstellen einer mikrostruktur aus thermoelektrischen sensorstäben - Google Patents
Infrarotsensor, wärmebildkamera und verfahren zum herstellen einer mikrostruktur aus thermoelektrischen sensorstäbenInfo
- Publication number
- EP2820388A1 EP2820388A1 EP13705134.8A EP13705134A EP2820388A1 EP 2820388 A1 EP2820388 A1 EP 2820388A1 EP 13705134 A EP13705134 A EP 13705134A EP 2820388 A1 EP2820388 A1 EP 2820388A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- sensor
- rod
- infrared sensor
- rods
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 238000001931 thermography Methods 0.000 title description 11
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- 239000000758 substrate Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
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- 238000005229 chemical vapour deposition Methods 0.000 description 6
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- 238000005240 physical vapour deposition Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 239000006096 absorbing agent Substances 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 238000010792 warming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/123—Thermoelectric array
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49194—Assembling elongated conductors, e.g., splicing, etc.
- Y10T29/49201—Assembling elongated conductors, e.g., splicing, etc. with overlapping orienting
Definitions
- thermoelectric sensor rods Infrared sensor, thermal imaging camera and method for producing a microstructure from thermoelectric sensor rods
- the invention relates to an infrared sensor with a plurality of rod-shaped thermocouples, which are referred to here as sensor rods, and a thermal imaging camera with such an infrared sensor.
- the invention also includes a method for producing a microstructure from thermoelectric sensor rods.
- An infrared sensor of the type mentioned and a corresponding manufacturing method are known from
- an infrared sensor may be formed as a three-dimensional microstructure, in which individual ⁇ ne thermocouples are each formed of two mutually parallel aligned semiconductor rods, which protrude self-supporting from a bottom of the sensor. At their free ends, the two semiconductor rods are electrically connected to each other, so that together they form a double rod. Furthermore, the two semiconductor rods are formed of materials having different Seebeck coefficients. Between them, therefore, a so-called thermoelectric force can be measured via printed conductors in the sensor base, ie an electrical voltage which arises when there is a heat difference between the free end of the double rod, to which the two semiconductor rods are connected, and its end at the sensor base.
- Each of the double bars can hereby represent a picture element (pixel-picture element) in a picture area of the infrared sensor.
- the aim is as good as possible then take advantage of the incident to the infrared sensor infrared radiation ⁇ the effect that won already low radiation intensity infrared image can be.
- the electrical voltage that is generated at each of the thermocouples be large in relation to Strah ⁇ development intensity.
- An object of the present invention is to better utilize the infrared radiation impinging on an infrared sensor in obtaining thermal images.
- the infrared sensor according to the invention With the infrared sensor according to the invention, a significantly larger pixel density can be provided than described with the in ⁇ going, in which a double rod of two semiconductor rods is necessary for each pixel.
- the infrared sensor according to the invention has individual sensor rods projecting from a sensor base and arranged parallel to one another, each of which represents a thermocouple.
- each thermocouple in the infrared sensor according to the invention is only half as large as in the infrared sensor of the prior art.
- the compact design is achieved by the following features.
- the first rod end is also electrically connected to the opposite, from ⁇ standing, the free end of the rod by two electrically conductive bar elements.
- Each of the rod ⁇ elements has a different Seebeck coefficient, so that both rod elements together form a thermocouple.
- the infrared sensor according to the invention is now one of two rod elements formed as a hollow profile. It may therefore have the basic shape of a hollow cylinder or, for example, be designed as a square tube.
- the second Stabele ⁇ ment is arranged in the first rod element.
- the first hollow rod member for example, completely filled by the two ⁇ th rod member or the second bar member is itself a hollow profile which, for example, extending coaxially in the first rod element.
- the infrared sensor according to the invention has the advantage that the two intermeshing rod elements are particularly compact or dense, so that the sensor rod formed from them requires only a small footprint on the sensor base. So therefore leave many Sensorstä ⁇ be, many individual thermocouples for individual pixels, arranged on a very small scene.
- sensor rods are even arranged in a grid with a pitch of less than 10 micrometers, preferably less than 6 micrometers. This is not possible with the known from the prior art microstructure of the infrared sensor and with conventional etching. There, the footprint of a sensor bar on the sensor bottom is twice as large. Thus, in the infrared sensor according to the invention, the area density of the sensor rods can thus be increased by a factor of 4.
- the inventive method provides, in egg ⁇ ner carrier layer or substrate which may consist for example of monocrystalline silicon to form wells, each providing a negative mold of a sensor rod is ⁇ .
- each of these negative forms then the two rod elements are formed successively.
- the depressions form pores or shafts, at the wall or shaft wall in a further step of the method according to the invention, a material is arranged, which has a predetermined See ⁇ Beck coefficient. The recesses or shafts are not completely finished with this material.
- the material of the substrate is as far from the rod members around that at least a portion of that rod member is exposed, the contacted to ⁇ against the shaft wall. In this way then the individual ⁇ a sensor rods are free and thus form the desired micro- ro Jardin of axially parallel rods arranged sensor.
- the material of the substrate is not fully ⁇ constantly removed. The remaining part of the substrate forms part of the sensor base. The two rod elements are at the free end of the bar
- thermocouple in which a thermoelectric force between the two rod elements is formed at the sensor base.
- the electrical connection at the free end of the rod is referred to as "hot contact” as they in accordance with intended ⁇ inappropriate use of the infrared sensor when struck by infrared Radiation or thermal radiation on the infrared sensor forms the warmest part of the sensor rod.
- each sensor rod as a hollow first rod element with a two ⁇ rod element arranged therein also makes it possible to produce particularly sensitive Ther ⁇ moiata.
- the so-called aspect ratio is preferably selected when producing a sensor rod with a value of more than 20: 1.
- the aspect ratio here is the quotient of the height of a sensor rod bezüg ⁇ lich the sensor base to its electrical line cross-section, the two rod elements together have a total of ⁇ .
- the line cross section is formed in this case in a plane parallel to the sensor base.
- This aspect ratio can also be adjusted reliably with the method according to the invention.
- particularly thin material layers can be deposited on the shaft walls (preferably less than 2 micrometers) in the production process, resulting in a very small line cross section.
- a particularly favorable temperature distribution along the sensor rods results when the sensor rods have a height of more than 100 micrometers with respect to the sensor base.
- a favorable aspect ratio and at the same time a high scanning ⁇ density can be achieved if the sensor bars ⁇ a rod diameter (measured in a plane parallel to the sensor soil) of less than 15 micrometers have.
- an absorption device which absorbs infrared radiation better than the first, outer rod element of the respective sensor rod ensures a further increase in the sensitivity of the individual sensor rods.
- This absorption device can be arranged on the free end of the rod itself or else as a filling in the sensor rod. Unlike the known from the prior art infrared sensor is characterized by the compact arrangement of two rod elements, the application of such absorption device on a sensor rod also particularly simple.
- An improved degree of absorption can advertising hereby reached the by the material of the absorbing means is chosen according to, ie for example a dark, before Trains t ⁇ black, color, or a polymer having respective absorption characteristics.
- the absorption can also be improved by the fact that the surface structure of the absorption device is designed accordingly.
- a sponge layer as they can be produced from silver or from Pla ⁇ tin (platinum sponge) are applied to the free end of the rod.
- Such layers have a rough surface, which is particularly well suited for the absorption of infrared radiation.
- a particularly large absorption area for a single sensor rod results according to an embodiment, when a protruding cap is arranged at the free end of the rod whose diameter is greater than that of the sensor rod itself.
- a protruding cap is arranged at the free end of the rod whose diameter is greater than that of the sensor rod itself.
- Such a "hat” on the free end of the rod can also absorb such infra ⁇ red radiation and convert it into heat that would otherwise reach the sensor rod past the sensor ground. With the cap so both the heat absorption is improved at the free end of the rod and the sensor ground protected against warming.
- thermoelectrically active bar elements themselves, a doped semiconductor material, in particular doped poly-silicon germanium (poly-SiGe) and / or doped silicon, is preferably used instead of two different metals with different Seebeck coefficients, preferably as material. also in the form of poly-silicon.
- the Seebeck coefficients of semiconducting materials are significantly larger.
- the Seebeck coefficient can be adjusted by the concentration of the doping. So it can be the same basic material (eg poly-silicon) be used for both rod elements, and are set here only by the different doping of the respective Seebeck- coefficient. This makes the production of the infrared sensor particularly easy.
- the microstructure of sensor rods may be a self-supporting structure, ie each sensor rod is then free from the sensor base. However, it can also be provided to arrange a filling material between the sensor rods, for example a lacquer. Thereby, the sensor bars to a stabilized static and walls ⁇ ren of the infrared sensor can be obtained by the choice of the filling material, a temperature distribution along the sensor bars to increase the sensitivity analyzes ty be optimized.
- the sensor may comprise ground conductor tracks by means of which the electromagnetic force generated by infrared radiation can be measured at each sensor rod, so the Sig ⁇ nalschreib of each sensor rod.
- the sensor rods are electrically interconnected by the conductor tracks in the sensor base to form a series circuit, which, however, is at the expense of the local resolution of the infrared sensor.
- the invention also encompasses further developments of this method, which include features which have already been described in connection with the infrared sensor according to the invention. For this reason, the corresponding developments of the method according to the invention will not be described again here.
- the invention also includes a thermal imaging camera which has an embodiment of the infrared sensor according to the invention.
- a thermal imaging camera which has an embodiment of the infrared sensor according to the invention.
- FIG. 2 shows a schematic representation of a perspective view and a cross section of a Sen ⁇ sorstabs an embodiment of the invention ⁇ sen infrared sensor
- FIG. 3 shows a schematic representation of a sectional view of an embodiment of the thermal imaging camera according to the invention
- FIG. 11 shows a schematic representation of cross-sectional views of a semiconductor substrate for illustrating
- Infrared sensor as a function of a rod height of the sensor rods.
- the described components of the infrared sensors each represent individual ne, independently of each other to be considered features of the infrared sensors, which further develop the infrared sensors each independently and thus individually or in a different than the combination shown as part of the invention are to be regarded.
- an infrared sensor 10 is shown, in which a plurality of sensor rods 12 are arranged in a two-dimensional grid to form a sensor array or sensor field 14 on a sensor base 16.
- the sensor bars 12 only some are provided with a loading ⁇ reference symbols in FIG 1 for clarity.
- the sensor rods 12 can protrude perpendicularly from the sensor base 16.
- Infrared sensor 10 is a microstructure that may have been fabricated using microsystem technology techniques known in the art.
- the sensor base 16 may be, for example, a silicon substrate.
- Each of the sensor bars 12 constitutes a thermoelectric sensor element.
- each individual image points (pixels) in an image area corresponding to the sensor array 14 are assigned to a Wär ⁇ measured value, which of a Heat output of a falling on the corresponding sensor rod 12 heat or infrared radiation depends.
- a grid dimension 18, ie a distance in each case between two adjacent sensor bars 12 along the rows of sensor bars 12 shown in FIG. 1, can be between one and five micrometers. Overall, an image resolution in the sensor array 14 of up to one megapixel per square millimeter is thus possible.
- Individual Sensorstä- be 12 may be interconnected by conductor paths in the sensor base 16 with one another, so that two or more Sen ⁇ sorstäbe 12 yield a pixel in the sensor array fourteenth
- a single sensor rod 12 will be described below with reference to FIG. 2, for which, for the sake of simplicity, it is assumed that this is a sensor rod of the infrared sensor 10 of FIG.
- FIG. 2 both a perspective view 20 and a cross section 22 are shown.
- the cross section 22 is in a plane parallel to the surface of the sensor base 16 ge ⁇ forms.
- the design of the sensor rod 12 can be representative of all sensor rods 12 located in the infrared sensor 10 here.
- a length or height 24 of the sensor rod 12 may be 100 microns or even a few hundred microns.
- the sensor rod 12 has an outer rod element 26 in which an inner rod element 28 is located.
- Both Stabele ⁇ elements 26, 28 extend along a longitudinal direction 30 from one located on the sensor base 16 bar end 32 to the opposite, free end of the rod 34.
- the two Stabele- elements 26, 28 consist of an electrically conductive material, whereby their Seebeck coefficient separates from each other ⁇ .
- the rod element 26 can be formed, for example, from a p-doped semiconductor material, and the rod element 28 can be formed from an n-doped semiconductor material.
- the two rod elements 26, 28 are driven elekt ⁇ isolated by an insulating layer 36 from each other. At the free rod end 34, the two rod elements 26, 28 are electrically connected to each other by an electrical connection 38, which is indicated only symbolically in FIG 2 by a double arrow.
- the transmitter sorstab 12 provides a total of a thermoelectric element.
- the electrical connection 38 at the free end of the rod 34 bil ⁇ det while the "hot" contact. If the infrared sensor 10 so held in the direction of a source of infrared radiation, that the longitudinal direction 30 in the direction points to the Ban- le, so the free end 34 of the sensor rod 12 is heated with respect to the rod end 32 disposed on the sensor base 16 strongly and it is on the sensor base 16 between the rod elements 26 and 28 is an electrical ⁇ specific signal voltage generated by the Seebeck effect 40 measurable.
- the rod elements 26, 28 are not, as in the prior Tech ⁇ nik, arranged separately on the sensor base 16, but they are interleaved, but electrically isolated from each to electrical connection 38 out.
- Such a micromachined thermocouple is externally visible only as a single body, here having the shape of an elongate cylinder.
- the rod element 26 may, for example, have the shape of a hollow cylinder. But it may also have a rectangular or square or any other shaped contour in the cross section 22.
- the inner rod member 28 may also have the shape of a hollow cylinder and ⁇ be disposed within the outer rod member 26 coaxially. By the rod member 28, the interior of the sensor rod can also be completely filled.
- the rod ⁇ element 28 does not necessarily have a cross-section 22 ring ⁇ shaped, closed shape, but may for example be designed semicircular or cover only a portion of the insulating layer 36 in another way.
- a diameter 42 of the rod element 26 in the cross section 22 may have a value in the range of less than 15 micrometers, preferably less than 10 micrometers.
- the signal voltage 40 is dependent on the absorbed heat output P and on the length 24 of the sensor rod 12 and the line cross section of the two rod elements 26, 28, as it results in the cross section 22.
- the line cross section therefore results from the layer thicknesses 26 ', 28' measured in the cross section 22 of the two material layers from which the bar elements 26, 28 consist.
- the signal voltage U (referred to as signal voltage 40 in FIG. 2) has corresponding values which result from the following equation:
- FIG. 3 an infrared sensor is shown for this purpose, of which, for the sake of simplicity, it is assumed that the infrared sensor 10 of FIG. 1 is involved. But it can also be an infrared sensor with a different structure.
- the infrared sensor 10 is installed in a thermal imaging camera and may be mounted on an integrated circuit (IC) of the thermal imaging camera.
- the integrated circuit 44 may be an application specific integrated circuit (ASIC).
- the integrated circuit 44 has connection contacts 46, of which only a few are provided with a reference symbol in FIG. 3 for the sake of clarity.
- the free ends 34 are heated in the example shown, by an infrared radiation 48 that the Thermal Imaging ⁇ ra meets through a protective window 50 to the infrared sensor 10, which consists of a material transparent to the infrared radiation 48 material.
- the infrared sensor 10 is shielded by shielding walls 52 of the thermal imaging camera from incident infrared radiation from the side.
- the connection contacts 46 are the Stabelemen ⁇ te 26, 28 of the individual sensor bars 12 (not dargestell- th) measurement circuits of the integrated circuit 44 are electrically connected.
- the signal voltage 40 of the individual sensor elements 12 is measured by the measuring circuits and a digital measured value is provided as a pixel value as a function of the measured voltage.
- the pixel value corresponds to the thermal power P absorbed by the hot contacts of the free rod ends 34 of the individual sensor rods 12.
- a plurality of sensor rods 12 can also be combined to form a single pixel, if an increased sensitivity of the sensor Sensor is desired.
- thermoelectrically active infrared sensor such as, for example, the infrared sensor 10
- Bar elements 26, 28 preferably only as extremely thin layers (see layer thicknesses 26 ', 28') formed in order to achieve the lowest possible thermal dissipation between the hot contact at the free end of the rod 34 and the cold rod end 32. This is achieved by the following manufacturing process from the microsystem technology.
- a rod or column-shaped recess 56 for each sensor rod 12 is etched by etching in a substrate 54, which preferably consists of silicon.
- the PAECE method Photo Assisted Electrochemical Etching
- the depth of the etched recesses 56 is greater than the DA in finally resulting height 24 of the individual sensor bars 12.
- the walls 58 of the recesses 56 are then passivated, which is preferably done by HEAT ⁇ zen and oxidizing. As a result, a passivation layer 60 is formed. Subsequently, in a
- Step S12 (FIG. 5), a layer 62 having the layer thickness 26 'is formed by depositing a material having a predetermined Seebeck coefficient on the wall 58 in the recesses 56.
- FIG. 12 shows how a desired sea pool coefficient S can be set by doping the poly-silicon with a concentration C of a doping material.
- concentration C is valid for both a p-doping and an n-doping. It is particularly advantageous that the usual doping material, from The prior art materials can be used.
- poly-silicon it is also possible, for example, to use poly-SiGe.
- Deposition can preferably be achieved by chemical vapor deposition (CVD).
- the material is preferably doped poly-silicon, since this method is particularly suitable for use in a CVD process. The process can be carried out dry or wet.
- step S14 the electrically insulating layer 36 on the layer 62 gebil ⁇ det. This can be done again by thermal oxidation or by depositing an electrically insulating material by means of CVD. Furthermore, in step S14
- a layer 68 is driven from a further conductive elec- material having a different Seebeck coefficient than the layer 62 it has in the Vertie ⁇ levies 56 with the film thickness 28 'is deposited.
- This material can also be, for example, doped polyvinyl silicon whose Seebeck coefficient can be set, for example, by means of the curve shown in FIG.
- the material of the layer 68 directly contacts the material of the layer 62, so ⁇ that the two electrically conductive layers 62, 68 are electrically contacted here.
- the layer 68 is subdivided into the individual rod elements 28.
- the substrate 54 is removed by means of a wet or dry etching method at tips 72 of the layers 62.
- the exposed layers 62 are rendered electrically conductive in a step S20 (FIG. 9) by, for example, ion implantation or by a sputtering process, so that the electrically insulating layer 36 becomes electrically conductive between the layers 62 and 68 at the tips 72 electrical connection 38 is formed at the tips 72.
- the impressing of electrically conductive elements in the tips 72 is symbolized by the arrows in FIG.
- step S22 (FIG. 10) further material of the substrate 54 is removed in a wet or dry etching process.
- the sensor rods 12 are completely exposed so that they have the height 24 on the sensor base 16.
- the sensor base 16 in this case comprises the remaining substrate 54 and the contact portions of the rod elements located on the Sensorbo ⁇ dengurseite 74 26 (layer 62) or rod member 28 (layer 68).
- step S24 (FIG. 11)
- absorption devices 76, 78, 80 can still be formed. In FIG. 11, three possibilities are shown for this purpose, wherein the common representation in FIG. 11 is not intended to mean that the sensor elements 12 must have all the different absorption devices 76, 78, 80.
- the absorber 76 may comprise a capping layer of the tip 72, which may be deposited by, for example, the CVD method or Physical Vapor Deposition (PVD). These may be sponge layers (for example of silver or platinum), semi-metal layers, polymer layers or dark, preferably black, color.
- the absorption device 78 can be produced by filling the sensor rod 12 with a liquid and then curing, for example to a polymer or to black color.
- the absorbing means 80 includes a hat-shaped cap through which rim provides an absorbing surface having a diam ⁇ ser 82 48 brieflyge- for the absorption of the infrared radiation is greater than the diameter 42 of the Sensorsta ⁇ bes itself.
- the hat-shaped cap may be formed, for example, by depositing (PVD, CVD) an absorbent material between steps S20 and S22. Suitable materials are again the materials described in connection with the absorption device 76.
- connection contacts 46 can take place via corresponding lithographic and etching steps known per se.
- L 100 microns
- L 1000 microns.
- FIG 13 wel ⁇ che sensitivity, so that voltage signal U, this results in proportion to the absorbed power P when a sensor rod 12 which has dimensions of 2 described in connection with FIG.
- An operating range 86 of possible operating points of the one sensor rod 12 is marked in the diagram of FIG.
- the examples show how high-density, large-area array sensors can be manufactured that allow fine-pixeled infrared imaging with high resolution.
- Ba ⁇ sis for this is a structural technology of silicon micromechanics, with which such arrays can be manufactured with thermoelectric sensor rods with a very high aspect ratio.
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Abstract
Description
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012203792A DE102012203792A1 (de) | 2012-03-12 | 2012-03-12 | Infrarotsensor, Wärmebildkamera und Verfahren zum Herstellen einer Mikrostruktur aus thermoelektrischen Sensorstäben |
PCT/EP2013/052662 WO2013135447A1 (de) | 2012-03-12 | 2013-02-11 | Infrarotsensor, wärmebildkamera und verfahren zum herstellen einer mikrostruktur aus thermoelektrischen sensorstäben |
Publications (1)
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EP2820388A1 true EP2820388A1 (de) | 2015-01-07 |
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EP13705134.8A Withdrawn EP2820388A1 (de) | 2012-03-12 | 2013-02-11 | Infrarotsensor, wärmebildkamera und verfahren zum herstellen einer mikrostruktur aus thermoelektrischen sensorstäben |
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US (1) | US9887339B2 (de) |
EP (1) | EP2820388A1 (de) |
DE (1) | DE102012203792A1 (de) |
WO (1) | WO2013135447A1 (de) |
Families Citing this family (18)
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DE102012203792A1 (de) | 2012-03-12 | 2013-09-12 | Siemens Aktiengesellschaft | Infrarotsensor, Wärmebildkamera und Verfahren zum Herstellen einer Mikrostruktur aus thermoelektrischen Sensorstäben |
US10119865B2 (en) * | 2013-06-10 | 2018-11-06 | Panasonic Intellectual Property Management Co., Ltd. | Infrared sensor having improved sensitivity and reduced heat generation |
US10141492B2 (en) | 2015-05-14 | 2018-11-27 | Nimbus Materials Inc. | Energy harvesting for wearable technology through a thin flexible thermoelectric device |
US10290794B2 (en) | 2016-12-05 | 2019-05-14 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US20180090660A1 (en) | 2013-12-06 | 2018-03-29 | Sridhar Kasichainula | Flexible thin-film based thermoelectric device with sputter deposited layer of n-type and p-type thermoelectric legs |
US11024789B2 (en) | 2013-12-06 | 2021-06-01 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US10367131B2 (en) | 2013-12-06 | 2019-07-30 | Sridhar Kasichainula | Extended area of sputter deposited n-type and p-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US11276810B2 (en) | 2015-05-14 | 2022-03-15 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US9978926B2 (en) | 2015-05-14 | 2018-05-22 | The Hong Kong University Of Science And Technology | Thermal radiation microsensor comprising thermoelectric micro pillars |
US11283000B2 (en) | 2015-05-14 | 2022-03-22 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US20190058103A1 (en) * | 2016-01-19 | 2019-02-21 | The Regents Of The University Of Michigan | Thermoelectric micro-module with high leg density for energy harvesting and cooling applications |
CN110031108A (zh) * | 2018-01-11 | 2019-07-19 | 清华大学 | 黑体辐射源及黑体辐射源的制备方法 |
CN110031106B (zh) * | 2018-01-11 | 2021-04-02 | 清华大学 | 黑体辐射源 |
CN110031107B (zh) * | 2018-01-11 | 2022-08-16 | 清华大学 | 黑体辐射源及黑体辐射源的制备方法 |
CN110031104A (zh) * | 2018-01-11 | 2019-07-19 | 清华大学 | 面源黑体 |
CN111924796A (zh) * | 2020-07-13 | 2020-11-13 | 无锡物联网创新中心有限公司 | 一种mems热电堆红外探测器的制备方法 |
IT202200001142A1 (it) * | 2022-01-24 | 2023-07-24 | Paolino Pio Mattina | Sistema di generazione e ricircolo di energia a retroazione |
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JP3186415B2 (ja) | 1994-04-06 | 2001-07-11 | 日産自動車株式会社 | 赤外線検知素子の製造方法 |
SE521415C2 (sv) * | 1998-02-17 | 2003-10-28 | Hans Goeran Evald Martin | Metod för att framställa en gassensortillhörig detektor, samt en detektor framställd enligt metoden |
US20050060884A1 (en) * | 2003-09-19 | 2005-03-24 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
US6969679B2 (en) * | 2003-11-25 | 2005-11-29 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
US7423258B2 (en) * | 2005-02-04 | 2008-09-09 | Baker Hughes Incorporated | Method and apparatus for analyzing a downhole fluid using a thermal detector |
FR2904146B1 (fr) * | 2006-07-20 | 2008-10-17 | Commissariat Energie Atomique | Procede de fabrication d'une nanostructure a base de nanofils interconnectes,nanostructure et utilisation comme convertisseur thermoelectrique |
US20080178921A1 (en) * | 2006-08-23 | 2008-07-31 | Qi Laura Ye | Thermoelectric nanowire composites |
DE102006055263A1 (de) * | 2006-11-23 | 2008-05-29 | Robert Bosch Gmbh | Mikromechanischer Thermopile-Sensor und Verfahren zu seiner Herstellung |
FR2923602B1 (fr) * | 2007-11-12 | 2009-11-20 | Commissariat Energie Atomique | Detecteur de rayonnement electromagnetique a thermometre a nanofil et procede de realisation |
US7915585B2 (en) * | 2009-03-31 | 2011-03-29 | Bae Systems Information And Electronic Systems Integration Inc. | Microbolometer pixel and fabrication method utilizing ion implantation |
DE102009043413B3 (de) | 2009-09-29 | 2011-06-01 | Siemens Aktiengesellschaft | Thermo-elektrischer Energiewandler mit dreidimensionaler Mikro-Struktur, Verfahren zum Herstellen des Energiewandlers und Verwendung des Energiewandlers |
DE102012203792A1 (de) | 2012-03-12 | 2013-09-12 | Siemens Aktiengesellschaft | Infrarotsensor, Wärmebildkamera und Verfahren zum Herstellen einer Mikrostruktur aus thermoelektrischen Sensorstäben |
-
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- 2012-03-12 DE DE102012203792A patent/DE102012203792A1/de not_active Ceased
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- 2013-02-11 US US14/384,993 patent/US9887339B2/en not_active Expired - Fee Related
- 2013-02-11 WO PCT/EP2013/052662 patent/WO2013135447A1/de active Application Filing
- 2013-02-11 EP EP13705134.8A patent/EP2820388A1/de not_active Withdrawn
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Also Published As
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US20150048249A1 (en) | 2015-02-19 |
WO2013135447A1 (de) | 2013-09-19 |
DE102012203792A1 (de) | 2013-09-12 |
US9887339B2 (en) | 2018-02-06 |
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