EP2801106A1 - Method for producing a composite body having a sintered joining layer and sintering device for producing such a composite body - Google Patents

Method for producing a composite body having a sintered joining layer and sintering device for producing such a composite body

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Publication number
EP2801106A1
EP2801106A1 EP12816024.9A EP12816024A EP2801106A1 EP 2801106 A1 EP2801106 A1 EP 2801106A1 EP 12816024 A EP12816024 A EP 12816024A EP 2801106 A1 EP2801106 A1 EP 2801106A1
Authority
EP
European Patent Office
Prior art keywords
subspace
chamber
composite body
sintering
partial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12816024.9A
Other languages
German (de)
French (fr)
Inventor
Michael Guyenot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2801106A1 publication Critical patent/EP2801106A1/en
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B5/00—Presses characterised by the use of pressing means other than those mentioned in the preceding groups
    • B30B5/02—Presses characterised by the use of pressing means other than those mentioned in the preceding groups wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
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    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75315—Elastomer inlay
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    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75317—Removable auxiliary member
    • H—ELECTRICITY
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755—Cooling means
    • H—ELECTRICITY
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    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83209—Compression bonding applying isostatic pressure, e.g. degassing using vacuum or a pressurised liquid
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Definitions

  • the present invention relates to a method for producing a composite body according to the subject-matter of independent claim 1 and to a sintering apparatus for producing such a composite body according to independent claim 6.
  • IGBTs insulated-gate bipolar transistor
  • a sintered joining layer is made of a silver sintering paste
  • German Patent DE 10 2007 046 901 A1 To produce a sintered compound is a paste-shaped
  • Starting material comprising easily decomposable silver compounds and silver flakes or nanosilver, used as a bonding layer.
  • the silver compounds decompose to form the elemental silver and form together with the silver flakes and the nanosilver, the sintered compound.
  • the sintering gear is carried out under exposure to the standard conditions increased pressure.
  • the present invention is a method for producing a composite body, in particular a composite body for constructing an electronic component, which comprises in a finished state, at least two cohesively interconnected part body, wherein the material connection by at least one arranged in a joining direction between the part bodies Füge für brought about. Under a "joining direction" should in this
  • the relative direction can be understood in the context in which parts to be joined are moved against each other immediately before joining.
  • the partial bodies can be formed, for example, by carrier substrates or by functional layers of semiconductor materials which are known from the production of electronic components. It is proposed that the method comprises the following steps:
  • Time savings can be achieved by avoiding otherwise necessary, complex compensation structures.
  • unavoidably occurring height tolerances can be compensated and a uniform surface pressure can be achieved on arranged composite bodies of slightly different height, whereby a simultaneous production of a plurality of composite bodies in a sintering process can be made possible.
  • the deformable subelement can in particular also be formed irreversibly deformable.
  • Positive air pressure difference means that in the second subspace there is an increased air pressure compared to the first subspace of the sintering chamber, so that due to the pressure difference, the deformable subelement is deformed in the direction of the first subspace.
  • the positive air pressure difference between the second subspace and the first subspace is produced by the fact that the
  • Air pressure in the first subspace is lowered to a value below an ambient air pressure value. Under a "ambient air pressure value" is in
  • an air pressure to be understood which prevails outside the gas-tight sealable sintering chamber.
  • a reduction in the number and size of macropores in the sintered joining layer can be achieved.
  • the air pressure in the second subspace is increased to a value above an ambient air pressure value.
  • steps a) and b) be for manufacture
  • At least two arranged composite bodies are performed at least twice before the steps c) and d) are carried out.
  • two or more arranged composite bodies can be produced in one production process, without complex compensating structures for compensating for a difference in distance which is potentially present due to manufacturing tolerances
  • the separator may have low adhesion to other materials. Thereby, adhesion of the composite body to the partial element at one end of a manufacturing process can be avoided.
  • the separating element is preferably made essentially of polytetrafluoroethylene (PTFE). In principle, however, the separating element may also be produced from another material which appears suitable for this purpose to the person skilled in the art and may be formed, for example, by a mat of a silicone elastomer.
  • Another object of the present invention is a sintering apparatus for producing a composite body, in particular a composite body for the construction of an electronic component, according to one of the extended and further developed, advantageous method.
  • the sintering apparatus comprises:
  • a substantially gas-tight sealable sintering chamber with chamber walls a substantially gas-impermeable space divider which divides the sintering chamber into a first subspace and at least one second subspace,
  • substantially gas-tight and “substantially gas-impermeable” is meant in this context, in particular, that the object should have the property described in an ideal form, but always present in a practical embodiment by imperfections
  • Leakage and gas permeability may have.
  • the deformable part element is designed elastically deformable.
  • elastically deformable is to be understood in this context in particular that an air pressure difference between the two sides of the sub-element maximum reversible deformation of the sub-element of advantageously at least 2 mm, preferably more than 4 mm and, more preferably, more than 5 mm causes.
  • a "flexurally soft object” is to be understood as meaning, in particular, an object which, starting from a force-free state in a direction which is perpendicular to main extension directions of the object, can not absorb any mechanical forces.
  • a pliable soft sheet object in which main directions of extension are given by dimensions of the object in two non-parallel in-plane directions can not receive forces in a direction normal to the surface, so that upon application of such a directed force, they will immediately irreversibly deformed.
  • the bending soft trained sub-element may be formed, for example, as an unrestrained attached film.
  • FIG. 1 is a schematic representation of a composite body in a side view
  • Fig. 2 is a schematic, side sectional view of a sintering device according to the invention with arranged composite bodies according to FIG. 1. Description of the embodiment
  • Fig. 1 shows a schematic structure of two composite bodies 10, 10 ', which are used for the construction of electronic components, in a finished state in a side view.
  • Each of the composite bodies 10, 10 ' comprises two partial bodies 12, 12', 14, 14 '.
  • the partial bodies 12, 12 ', 14, 14' of each of the two composite bodies 10, 10 ' are interconnected in a joining direction 16 by material connection, wherein the material connection by a in a joining direction 16 between the partial bodies 12, 12', 14, 14 ' arranged joining layer 18, 18 'is brought about.
  • the first partial body 12, which is shown at the bottom in FIG. 1, consists of a substrate in silicon carbide (SiC) plate form.
  • the joining layer 18 above the first part body 12 is formed by a sintered material made entirely of sintered silver. Parallel to a plane which is arranged perpendicular to the joining direction 16, the second partial body 14 designed as a silicon-based semiconductor layer is provided.
  • the second composite body 10 ' is formed identically to the first composite body 10. Nevertheless, by manufacturing tolerances between the two composite bodies 10, 10 'in the arranged state, a height difference 20, which in the
  • Fig. 1 is exaggerated for clarity.
  • FIG. 2 shows a schematic, lateral view of a sintering device according to the invention for producing the composite bodies 10, 10 '.
  • the sintering apparatus comprises a substantially gastight sealable sintering chamber 22 having an interior 24 defined by chamber walls 26, a bottom member 28, a ceiling member 30, and a door, not shown, arranged parallel to the plane of the drawing in a closed state and provided for the sintering chamber 22 gastight to close, is limited.
  • the sintering chamber 22 has a gas-impermeable space divider 32, which is materially connected on both sides and on a longitudinal side facing away from the door with the chamber walls 26 by welds and the sintering chamber 22 into a first, lower subspace 36 and a second, upper subspace 38 divides.
  • the space divider 32, as well as the door-facing edges of the chamber walls 26, are provided with sealing elements which are integrally formed and form a sealing unit 40.
  • the chamber wall 26 opposite the door in a closed state has, in an upper region of the first subspace 36, a gas-permeable connection 42 between the sintering chamber 22 and a space surrounding the sintering device, which space serves to exchange the air.
  • a vacuum pump (not shown) and a ventilation valve (not shown) are installed on the connecting piece.
  • the sintering device further comprises a combined heating / cooling device 44, which is arranged on the bottom element 28 within the first subspace 36 and forms on its inner side 24 of the sintering chamber 22 side facing a support surface 46, which for storing the sintered, arranged composite bodies 10, 10 'serves.
  • the heating / cooling device 44 is provided to increase a temperature in the first compartment 36 and in particular a temperature of arranged on the shelf 46, arranged composite body 10, 10 'to a predetermined sintering temperature between 100 ° C and 350 ° C. or a temperature higher than the normal room temperature in the first compartment 36 and the arranged composite body 10,
  • the space divider 32 has a deformable partial element 34, which is arranged in a preferably central area and whose position is relative to the
  • the partial element 34 is formed by an elastically deformable membrane of polytetrafluoroethylene (PTFE) in a rectangular shape, wherein the sides of the rectangle are gas-tightly connected to the space divider 32.
  • PTFE polytetrafluoroethylene
  • the partial element 34 may also be formed by an elastically deformable membrane of a silicone elastomer.
  • the sub-element 34 is reversible relative to the chamber walls 26 reversibly by a maximum of 5 mm deflected.
  • the partial body 12, 14 and arranged in the joining direction 16 between the two partial bodies 12, 14, unsintered joining layer 18 are first arranged in the manner shown in FIG. 1 to the arranged composite body 10.
  • the arranged composite body 10 is placed on the support surface 46 in the first subspace 36 in the immediate vicinity, at a minimum distance of about 2 mm below the elastically deformable subelement 34 of the space divider 32.
  • a separating element 48 formed by a thin PTFE film for separating the arranged composite bodies 10, 10 'and the space divider 32 is placed on the arranged composite bodies 10, 10'.
  • the door of the sintering apparatus is closed and a positive air pressure difference between the second subspace 38 and the first subspace 36 is established by lowering the air pressure in the first subspace 36 by the vacuum pump to a value below an ambient air pressure value.
  • the air pressure in the first subspace 36 By lowering the air pressure to a value of 1 mbar, the elastically deformable subelement 34 is uniformly deformed in the direction of the first subspace 36 (shown in dashed lines in FIG. 2) and comes into abutment with the composite bodies 10 arranged below the subelement 34. 10 'on the thus despite the existing height difference 20 a uniform surface pressure is applied.
  • positive air pressure difference between the second subspace 38 and the first subspace 36 is activated by activation of a heating element of the heating / cooling device 44, the temperature of the arranged composite body 10, 10 'to a predetermined temperature as the sintering temperature and for a predetermined time Sintering process maintained.
  • the surface pressure on the disposed composites 10, 10 ' is maintained because both elongation of the composites 10, 10' during an initial increase in temperature to the sintering temperature and shrinkage of the composites 10, 10 'by a thickness change of the bonding layer 18, 18 'during the
  • the heating element of the heating / cooling device 44 is deactivated and a cooling element of the heating / cooling Direction 44 is activated to lower the temperature of the now completed composite body 10, 10 'in a predetermined time to room temperature.
  • the cooling element of the heating / cooling device 44 Upon reaching the room temperature, the cooling element of the heating / cooling device 44 is deactivated and the air pressure in the first subspace 36 is determined by means of the
  • Ventilation valve adapted to the ambient air pressure.
  • the elastically deformable sub-element 34 deforms in a reversible manner back to its original position and stands out from the composite bodies 10, 10 ', so that the surface pressure on the composite bodies 10, 10' is repealed. Thereafter, the door of the sintering device can be opened and the completed

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Mechanical Engineering (AREA)
  • Powder Metallurgy (AREA)

Abstract

The invention relates to a method for producing a composite body (10), in particular a composite body (10) for constructing an electronic component, which, in a completed state, comprises at least two partial bodies (12, 14) that are firmly bonded to each other, wherein the firm bond is produced by at least one joining layer (18) that is arranged in a joining direction (16) between the partial bodies (12, 14) and formed from a sintered material, characterized by the following steps: a) creating an assembly of the at least two partial bodies (12, 14) and the at least one unsintered joining layer (18) arranged in the joining direction (16) between the at least two partial bodies (12, 14) into an assembled composite body (10); b) placing the assembled composite body (10) in a first partial chamber (36) of a sintering chamber (22) that can be sealed substantially gas-tight, has chamber walls (26), and has a substantially gas-impermeable chamber divider (32) that divides the sintering chamber (22) into the first partial chamber (36) and at least one second partial chamber (38) in the direct vicinity of the chamber divider (32), wherein the chamber divider (32) has at least one deformable partial element (34) having a position that is modifiable relative to the chamber walls (26); c) producing a positive chamber pressure difference between the second partial chamber (38) and the first partial chamber (36); and d) heating the arranged composite body (10) at least to a temperature predetermined as a sintering temperature. The invention further relates to a sintering device for producing such a composite body (10).

Description

Beschreibung  description
Titel title
Verfahren zur Herstellung eines Verbundkörpers mit gesinterter Fügeschicht und Sintervorrichtung zur Herstellung eines derartigen Verbund körpers A process for producing a composite body with sintered joining layer and sintering device for producing such a composite body
Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines Verbundkörpers gemäß dem Gegenstand des unabhängigen Anspruchs 1 sowie eine Sintervorrichtung zur Herstellung eines derartigen Verbundkörpers gemäß dem unabhängigen Anspruch 6. The present invention relates to a method for producing a composite body according to the subject-matter of independent claim 1 and to a sintering apparatus for producing such a composite body according to independent claim 6.
Stand der Technik Verbundkörper mit den Merkmalen des Oberbegriffs des Anspruchs 1 findenState of the art find composite body with the features of the preamble of claim 1
Anwendung auf dem Gebiet der Leistungselektronik, beispielsweise bei IGBTs (insulated-gate bipolar transistor), wobei versucht wird, Anforderungen an einen dauerhaften Verbund von Teilkörpern des Verbundkörpers hinsichtlich einer Erhöhung einer zulässigen maximalen Betriebstemperatur und einer angestreb- ten Erhöhung einer Anzahl von Temperaturzyklen zur Verlängerung der Lebensdauer eines elektronischen Bauelements durch zumindest eine Fügeschicht zu erfüllen, die durch einen Sintervorgang herstellbar ist. Derartige Verbundkörper, bei denen eine gesinterte Fügeschicht aus einer Silbersinterpaste hergestellt ist, werden beispielsweise in der deutschen Patentschrift DE 10 2007 046 901 A1 beschrieben. Zur Herstellung einer Sinterverbindung wird ein pastenförmigerApplication in the field of power electronics, for example in IGBTs (insulated-gate bipolar transistor), which seeks to requirements for a permanent composite body part of the composite in terms of increasing a maximum operating temperature and a desired increase in a number of temperature cycles for extension To meet the life of an electronic component by at least one joining layer, which can be produced by a sintering process. Such composites, in which a sintered joining layer is made of a silver sintering paste, are described, for example, in German Patent DE 10 2007 046 901 A1. To produce a sintered compound is a paste-shaped
Ausgangswerkstoff, umfassend leicht zersetzbare Silberverbindungen sowie Silberflocken oder Nanosilber, als Fügeschicht verwendet. Bei einer Temperaturbehandlung des Ausgangswerkstoffs unter 300°C zersetzen sich die Silberverbindungen unter Ausbildung des elementaren Silbers und bilden zusammen mit den Silberflocken und dem Nanosilber die Sinterverbindung aus. Der Sintervor- gang erfolgt dabei unter Beaufschlagung mit gegenüber den Standardbedingungen erhöhtem Druck. Starting material, comprising easily decomposable silver compounds and silver flakes or nanosilver, used as a bonding layer. At a temperature treatment of the starting material below 300 ° C, the silver compounds decompose to form the elemental silver and form together with the silver flakes and the nanosilver, the sintered compound. The sintering gear is carried out under exposure to the standard conditions increased pressure.
Offenbarung der Erfindung Disclosure of the invention
Gegenstand der vorliegenden Erfindung ist ein Verfahren zur Herstellung eines Verbundkörpers, insbesondere eines Verbundkörpers zum Aufbau eines elektro- nischen Bauelements, der in einem fertiggestellten Zustand zumindest zwei stoffschlüssig miteinander verbundene Teilkörper umfasst, wobei der Stoffschluss durch zumindest eine in einer Fügerichtung zwischen den Teilkörpern angeordnete Fügeschicht herbeigeführt ist. Unter einer "Fügerichtung" soll in diesem The present invention is a method for producing a composite body, in particular a composite body for constructing an electronic component, which comprises in a finished state, at least two cohesively interconnected part body, wherein the material connection by at least one arranged in a joining direction between the part bodies Fügeschicht brought about. Under a "joining direction" should in this
Zusammenhang insbesondere die relative Richtung verstanden werden, in der zusammenzufügende Teile unmittelbar vor einer Zusammenfügung gegeneinander bewegt werden. Die Teilkörper können beispielsweise von Trägersubstraten oder von Funktionsschichten aus Halbleitermaterialien gebildet sein, die aus der Herstellung von elektronischen Bauelementen bekannt sind. Es wird vorgeschlagen, dass das Verfahren folgende Schritte umfasst: In particular, the relative direction can be understood in the context in which parts to be joined are moved against each other immediately before joining. The partial bodies can be formed, for example, by carrier substrates or by functional layers of semiconductor materials which are known from the production of electronic components. It is proposed that the method comprises the following steps:
a) Erstellen einer Anordnung der zumindest zwei Teilkörper und der in der Fügerichtung zwischen den zumindest zwei Teilkörpern angeordneten, zumindest einen ungesinterten Fügeschicht zu einem angeordneten Verbundkörper, b) Platzieren des angeordneten Verbundkörpers in einen ersten Teilraum einer im Wesentlichen gasdicht verschließbaren Sinterkammer mit Kammerwänden und einem im Wesentlichen gasundurchlässigen Raumteiler, der die Sinterkammer in den ersten Teilraum und zumindest einen zweiten Teilraum aufteilt, in unmittelbarer Nähe des Raumteilers, wobei der Raumteiler zumindest ein verformbares Teilelement aufweist, dessen Position durch eine Druckdifferenz zwischen dem ersten und dem zweiten Teilraum (36, 38) relativ zu den Kammerwänden veränderbar ist, b) placing the arranged composite body in a first subspace of a substantially gas-tight sealable sintering chamber with chamber walls and a substantially gas-impermeable partition, which divides the sintering chamber into the first subspace and at least a second subspace, in the immediate vicinity of the room divider, wherein the space divider has at least one deformable subelement, whose position by a pressure difference between the first and the second subspace (36, 38 ) is variable relative to the chamber walls,
c) Herstellen einer positiven Luftdruckdifferenz zwischen dem zweiten Teilraum und dem ersten Teilraum, und c) establishing a positive air pressure difference between the second subspace and the first subspace, and
d) Erhitzen des angeordneten Verbundkörpers zumindest bis auf eine als Sintertem- peratur vorbestimmte Temperatur. Dadurch kann insbesondere bei angeordneten Verbundkörpern, die eine dem Raumteiler zugewandte Außenfläche mit zumindest zwei Teilflächen umfasst, die nach dem Platzieren des angeordneten Verbund körpers im ersten Teilraum in Bezug auf den Raumteiler unterschiedlich beabstandet sind, eine gleichmäßige Flächenpressung auf die zumindest zwei Teilflächen ermöglicht werden. Ferner kann in diesen Fällen eined) heating the arranged composite body at least up to a sintering temperature predetermined temperature. As a result, in particular in the case of arranged composite bodies which comprises an outer surface facing the room divider with at least two partial surfaces, which are differently spaced after placing the arranged composite body in the first subspace with respect to the room divider, a uniform surface pressure on the at least two partial surfaces are made possible. Furthermore, in these cases a
Zeitersparnis durch Vermeidung von ansonsten notwendigen, aufwändigen Ausgleichsaufbauten erreicht werden. Time savings can be achieved by avoiding otherwise necessary, complex compensation structures.
Weiterhin können bei mehreren angeordneten Verbundkörper unvermeidlicherweise auftretende Höhentoleranzen ausgeglichen und eine gleichmäßige Flächenpressung auf angeordnete Verbundkörper mit leicht unterschiedlicher Höhe erreicht werden, wodurch eine gleichzeitige Herstellung mehrerer Verbundkörper in einem Sintervorgang ermöglicht werden kann. Das verformbare Teilelement kann insbesondere auch irreversibel verformbar ausgebildet sein. Furthermore, in the case of a plurality of composite bodies, unavoidably occurring height tolerances can be compensated and a uniform surface pressure can be achieved on arranged composite bodies of slightly different height, whereby a simultaneous production of a plurality of composite bodies in a sintering process can be made possible. The deformable subelement can in particular also be formed irreversibly deformable.
Unter positiver Luftdruckdifferenz ist zu verstehen, dass im zweiten Teilraum ein im Vergleich zum ersten Teilraum der Sinterkammer erhöhter Luftdruck vorliegt, sodass auf Grund der Druckdifferenz das verformbare Teilelement in Richtung des ersten Teilraums verformt wird. Positive air pressure difference means that in the second subspace there is an increased air pressure compared to the first subspace of the sintering chamber, so that due to the pressure difference, the deformable subelement is deformed in the direction of the first subspace.
Weiterhin wird vorgeschlagen, dass die positive Luftdruckdifferenz zwischen dem zweiten Teilraum und dem ersten Teilraum dadurch hergestellt wird, dass der Furthermore, it is proposed that the positive air pressure difference between the second subspace and the first subspace is produced by the fact that the
Luftdruck im ersten Teilraum auf einen Wert unterhalb eines Umgebungsluftdruckwerts abgesenkt wird. Unter einem„Umgebungsluftdruckwert" soll in Air pressure in the first subspace is lowered to a value below an ambient air pressure value. Under a "ambient air pressure value" is in
diesem Zusammenhang ein Luftdruck verstanden werden, der außerhalb der gasdicht verschließbaren Sinterkammer herrscht. Dadurch kann eine Reduzierung von Anzahl und Größe von Makroporen in der gesinterten Fügeschicht erreicht werden. Zusätzlich oder alternativ ist es möglich, dass der Luftdruck im zweiten Teilraum auf einen Wert oberhalb eines Umgebungsluftdruckwertes erhöht wird. In this context, an air pressure to be understood, which prevails outside the gas-tight sealable sintering chamber. As a result, a reduction in the number and size of macropores in the sintered joining layer can be achieved. Additionally or alternatively, it is possible that the air pressure in the second subspace is increased to a value above an ambient air pressure value.
Wenn der angeordnete Verbundkörper im ersten Teilraum unterhalb des Teilelements angeordnet wird, ist eine Beaufschlagung mit einer gleichmäßigen If the arranged composite body is arranged in the first subspace below the sub-element, an impingement with a uniform
Flächenpressung in besonders einfacher Weise ermöglicht, bei der eine Gefahr einer unbeabsichtigten Verschiebung der Teilkörper des angeordneten Verbundkörpers in einem Zeitraum zwischen dem Platzieren des angeordneten Verbundkörpers und dem Erhitzen gering gehalten werden kann. Ferner wird vorgeschlagen, dass die Schritte a) und b) zu einer Herstellung Surface pressure in a particularly simple manner allows for a danger an unintentional displacement of the part body of the arranged composite body in a period between the placement of the arranged composite body and the heating can be kept low. It is further proposed that steps a) and b) be for manufacture
zumindest zweier angeordneter Verbundkörper zumindest zweifach durchgeführt werden, bevor die Schritte c) und d) ausgeführt werden. Dadurch können zwei oder mehr angeordnete Verbundkörper in einem Herstellvorgang hergestellt werden, ohne dass aufwändige Ausgleichsaufbauten zum Ausgleich einer durch Fertigungstoleranzen potentiell vorhandenen Abstandsdifferenz in Bezug auf dasat least two arranged composite bodies are performed at least twice before the steps c) and d) are carried out. As a result, two or more arranged composite bodies can be produced in one production process, without complex compensating structures for compensating for a difference in distance which is potentially present due to manufacturing tolerances
Teilelement erstellt werden müssen. Insbesondere können dadurch auch strukturell unterschiedliche angeordnete Verbundkörper mit unterschiedlichen Bauhöhen in einem Herstellvorgang hergestellt werden. Des Weiteren wird vorgeschlagen, dass anschließend an den Schritt b) ein Subelement must be created. In particular, this also structurally different arranged composite body can be made with different heights in a manufacturing process. Furthermore, it is proposed that subsequent to step b) a
Trennelement zwischen den angeordneten Verbundkörpern und dem Raumteiler angeordnet wird. Vorteilhaft kann das Trennelement geringe Adhäsion gegenüber anderen Materialien aufweisen. Dadurch kann ein Anhaften der Verbundkörper an dem Teilelement an einem Ende eines Herstellvorgangs vermieden werden. Bevorzugt ist das Trennelement im Wesentlichen aus Polytetrafluor- ethylen (PTFE) hergestellt. Grundsätzlich kann das Trennelement aber auch aus einem anderen, dem Fachmann für diesen Zweck geeignet erscheinenden Material hergestellt und beispielsweise von einer Matte aus einem Silikonelastomer gebildet sein.  Separating element between the arranged composite bodies and the room divider is arranged. Advantageously, the separator may have low adhesion to other materials. Thereby, adhesion of the composite body to the partial element at one end of a manufacturing process can be avoided. The separating element is preferably made essentially of polytetrafluoroethylene (PTFE). In principle, however, the separating element may also be produced from another material which appears suitable for this purpose to the person skilled in the art and may be formed, for example, by a mat of a silicone elastomer.
Ein weiterer Gegenstand der vorliegenden Erfindung ist eine Sintervorrichtung zur Herstellung eines Verbundkörpers, insbesondere eines Verbund körpers zum Aufbau eines elektronischen Bauelements, nach einem der aus- und weitergestalteten, vorteilhaften Verfahren. Another object of the present invention is a sintering apparatus for producing a composite body, in particular a composite body for the construction of an electronic component, according to one of the extended and further developed, advantageous method.
Die Sintervorrichtung umfasst: The sintering apparatus comprises:
eine im Wesentlichen gasdicht verschließbare Sinterkammer mit Kammerwänden, einen im Wesentlichen gasundurchlässigen Raumteiler, das die Sinterkammer in einen ersten Teilraum und zumindest einen zweiten Teilraum aufteilt,  a substantially gas-tight sealable sintering chamber with chamber walls, a substantially gas-impermeable space divider which divides the sintering chamber into a first subspace and at least one second subspace,
- zumindest eine gasdurchlässige Verbindung zwischen der Sinterkammer und einem die Sintervorrichtung umgebenden Raum zum Luftaustausch, zumindest eine Heizvorrichtung zur Erhöhung einer Temperatur zumindest eines der Teilräume auf eine als Sintertemperatur vorbestimmte Temperatur, wobei der Raumteiler zumindest ein Teilelement aufweist, dessen Position durch eine Raumdruckdifferenz zwischen dem ersten und dem zweiten Teilraum (36, 38) relativ zu den Kammerwänden veränderbar ist. at least one gas-permeable connection between the sintering chamber and a space surrounding the sintering device for exchanging air, at least one heating device for increasing a temperature of at least one of the subspaces to a predetermined temperature as the sintering temperature, wherein the space divider has at least one subelement whose position is variable by a spatial pressure difference between the first and the second subspace (36, 38) relative to the chamber walls.
Unter "im Wesentlichen gasdicht" und„im Wesentlichen gasundurchlässig" soll in diesem Zusammenhang insbesondere verstanden werden, dass das Objekt die beschriebene Eigenschaft in idealer Ausprägung aufweisen soll, jedoch eine in einer praktischen Ausgestaltung durch Unvollkommenheiten stets vorhandeneBy "substantially gas-tight" and "substantially gas-impermeable" is meant in this context, in particular, that the object should have the property described in an ideal form, but always present in a practical embodiment by imperfections
Leckage und Gasdurchlässigkeit aufweisen darf. Leakage and gas permeability may have.
In einer vorteilhaften Ausgestaltung der Sintervorrichtung ist das verformbare Teilelement elastisch verformbar ausgebildet. Unter "elastisch verformbar" soll in diesem Zusammenhang insbesondere verstanden werden, dass eine Luftdruckdifferenz zwischen den beiden Seiten des Teilelements eine maximale, reversible Verformung des Teilelements von vorteilhaft zumindest 2 mm, bevorzugt von mehr als 4 mm und, besonders bevorzugt, von mehr als 5 mm hervorruft. In an advantageous embodiment of the sintering device, the deformable part element is designed elastically deformable. By "elastically deformable" is to be understood in this context in particular that an air pressure difference between the two sides of the sub-element maximum reversible deformation of the sub-element of advantageously at least 2 mm, preferably more than 4 mm and, more preferably, more than 5 mm causes.
Dadurch können auf konstruktiv einfache Weise Toleranzen von angeordneten Verbundkörpern ausgeglichen und gleichmäßige Flächenpressungen auf die angeordneten Verbundkörper während des Herstellvorgangs trotz unterschiedlicher Abstände zum Teilelement nach Platzieren der angeordneten Verbundkörper in dem ersten Teilraum erreicht werden. Derselbe Vorteil kann erzielt werden, wenn das verformbare Teilelement biegeweich ausgebildet ist. Unter einem "biegeweichen Objekt" soll in diesem Zusammenhang insbesondere ein Objekt verstanden werden, dass ausgehend von einem kräftefrei angeordneten Zustand in einer Richtung, die senkrecht zu Haupterstreckungsrichtungen des Objekts angeordnet ist, keine mechanischen Kräfte aufnehmen kann. Ein biegeweiches, flächiges Objekt beispielsweise, bei dem Haupterstreckungsrichtungen durch Abmessungen des Objekts in zwei nicht-parallelen, in der Fläche liegenden Richtungen gegeben sind, kann in einer Richtung senkrecht zur Fläche keine Kräfte aufnehmen, so dass es sich bei Anwendung einer solcherart gerichteten Kraft sofort irreversibel verformt. Das biegeweich ausgebildete Teilelement kann beispielsweise als ungespannt befestigte Folie ausgebildet sein. Grundsätzlich ist es möglich, insbesondere im zweiten Teilraum, alternativ zu Luft ein beliebiges gasförmiges oder flüssiges Medium vorzusehen und durch eine Druckbeaufschlagung eine positive Raumdruckdifferenz zwischen dem ersten und dem zweiten Teilraum auszubilden. As a result, tolerances of arranged composite bodies can be compensated for in a structurally simple manner and uniform surface pressures can be achieved on the arranged composite bodies during the production process despite different distances to the partial element after placing the arranged composite bodies in the first subspace. The same advantage can be achieved if the deformable part element is designed to be flexible. In this context, a "flexurally soft object" is to be understood as meaning, in particular, an object which, starting from a force-free state in a direction which is perpendicular to main extension directions of the object, can not absorb any mechanical forces. For example, a pliable soft sheet object in which main directions of extension are given by dimensions of the object in two non-parallel in-plane directions can not receive forces in a direction normal to the surface, so that upon application of such a directed force, they will immediately irreversibly deformed. The bending soft trained sub-element may be formed, for example, as an unrestrained attached film. In principle, it is possible, in particular in the second subspace, to provide, as an alternative to air, any gaseous or liquid medium and to form a positive volume pressure difference between the first and the second subspace by pressurization.
Folglich ist für die Sintervorrichtung eine Druck erhöhende und/oder Druck vermindernde Vorrichtung vorzusehen. Zeichnung Consequently, a pressure-increasing and / or pressure-reducing device is to be provided for the sintering device. drawing
Weitere Vorteile ergeben sich aus der folgenden Zeichnungsbeschreibung. In der Zeichnung ist ein Ausführungsbeispiel der Erfindung dargestellt. Die Zeichnung, die Beschreibung und die Ansprüche enthalten zahlreiche Merkmale in Kombina- tion. Der Fachmann wird die Merkmale zweckmäßigerweise auch einzeln betrachten und zu sinnvollen weiteren Kombinationen zusammenfassen. Further advantages emerge from the following description of the drawing. In the drawing, an embodiment of the invention is shown. The drawing, the description and the claims contain numerous features in combination. The person skilled in the art will expediently also consider the features individually and combine them into meaningful further combinations.
Es zeigen: Fig. 1 eine schematisierte Darstellung eines Verbundkörpers in einer Seitenansicht, und 1 is a schematic representation of a composite body in a side view, and
Fig. 2 eine schematische, seitliche Schnittansicht einer erfindungsgemäßen Sintervorrichtung mit angeordneten Verbundkörpern gemäß der Fig. 1. Beschreibung des Ausführungsbeispiels  Fig. 2 is a schematic, side sectional view of a sintering device according to the invention with arranged composite bodies according to FIG. 1. Description of the embodiment
Fig. 1 zeigt einen schematisierten Aufbau zweier Verbundkörper 10, 10', die zum Aufbau von elektronischen Bauelementen Verwendung finden, in einem fertiggestellten Zustand in einer Seitenansicht. Jeder der Verbundkörper 10, 10' umfasst zwei Teilkörper 12, 12', 14, 14'. Die Teilkörper 12, 12', 14, 14' jedes der beiden Verbundkörper 10, 10' sind in einer Fügerichtung 16 durch Stoffschluss miteinander verbunden, wobei der Stoffschluss durch eine in einer Fügerichtung 16 zwischen den Teilkörpern 12, 12', 14, 14' angeordnete Fügeschicht 18, 18' herbeigeführt ist. Der erste Teilkörper 12, der in der Fig. 1 zuunterst dargestellt ist, besteht aus einem Substrat in Plattenform aus Siliziumkarbid (SiC). Die Fügeschicht 18 oberhalb des ersten Teilkörpers 12 ist von einem gesinterten Werkstoff gebildet, der vollständig aus gesintertem Silber besteht. Parallel zu einer Ebene, die senkrecht zur Fügerichtung 16 angeordnet ist, ist der als Halbleiterschicht auf Siliziumbasis ausgebildete zweite Teilkörper 14 vorgesehen. Fig. 1 shows a schematic structure of two composite bodies 10, 10 ', which are used for the construction of electronic components, in a finished state in a side view. Each of the composite bodies 10, 10 'comprises two partial bodies 12, 12', 14, 14 '. The partial bodies 12, 12 ', 14, 14' of each of the two composite bodies 10, 10 'are interconnected in a joining direction 16 by material connection, wherein the material connection by a in a joining direction 16 between the partial bodies 12, 12', 14, 14 ' arranged joining layer 18, 18 'is brought about. The first partial body 12, which is shown at the bottom in FIG. 1, consists of a substrate in silicon carbide (SiC) plate form. The joining layer 18 above the first part body 12 is formed by a sintered material made entirely of sintered silver. Parallel to a plane which is arranged perpendicular to the joining direction 16, the second partial body 14 designed as a silicon-based semiconductor layer is provided.
Der zweite Verbundkörper 10' ist identisch zum ersten Verbundkörper 10 ausgebildet. Durch Fertigungstoleranzen besteht dennoch zwischen den beiden Ver- bundkörpern 10, 10' im angeordneten Zustand eine Höhendifferenz 20, die in derThe second composite body 10 'is formed identically to the first composite body 10. Nevertheless, by manufacturing tolerances between the two composite bodies 10, 10 'in the arranged state, a height difference 20, which in the
Fig. 1 zur Verdeutlichung übertrieben dargestellt ist. Fig. 1 is exaggerated for clarity.
Fig. 2 zeigt eine schematische, seitliche Ansicht einer erfindungsgemäßen Sintervorrichtung zur Herstellung der Verbundkörper 10, 10'. Die Sintervorrichtung umfasst eine im Wesentlichen gasdicht verschließbare Sinterkammer 22 mit einem Innenraum 24, der von Kammerwänden 26, einem Bodenelement 28, einem Deckenelement 30 und von einer nicht dargestellten Tür, die in einem geschlossenen Zustand parallel zur Zeichenebene angeordnet und dazu vorgesehen ist, die Sinterkammer 22 gasdicht zu verschließen, begrenzt ist. FIG. 2 shows a schematic, lateral view of a sintering device according to the invention for producing the composite bodies 10, 10 '. The sintering apparatus comprises a substantially gastight sealable sintering chamber 22 having an interior 24 defined by chamber walls 26, a bottom member 28, a ceiling member 30, and a door, not shown, arranged parallel to the plane of the drawing in a closed state and provided for the sintering chamber 22 gastight to close, is limited.
Die Sinterkammer 22 weist einen gasundurchlässigen Raumteiler 32 auf, der an beiden Seiten und an einer der Tür abgewandten Längsseite mit den Kammerwänden 26 durch Schweißverbindungen stoffschlüssig verbunden ist und die Sinterkammer 22 in einen ersten, unteren Teilraum 36 und einen zweiten, oberen Teilraum 38 aufteilt. An einer der Tür zugewandten Kante ist der Raumteiler 32, ebenso wie der Tür zugewandte Kanten der Kammerwände 26, mit Dichtungselementen ausgestattet, die einstückig geformt sind und eine Dichtungseinheit 40 ausbilden. The sintering chamber 22 has a gas-impermeable space divider 32, which is materially connected on both sides and on a longitudinal side facing away from the door with the chamber walls 26 by welds and the sintering chamber 22 into a first, lower subspace 36 and a second, upper subspace 38 divides. At an edge facing the door, the space divider 32, as well as the door-facing edges of the chamber walls 26, are provided with sealing elements which are integrally formed and form a sealing unit 40.
Die der Tür in einem geschlossenen Zustand gegenüberliegende Kammerwand 26 weist in einem oberen Bereich des ersten Teilraums 36 eine von einer Durchführung mit außen liegendem Anschlussstutzen gebildete gasdurchlässige Verbindung 42 zwischen der Sinterkammer 22 und einem die Sintervorrichtung umgebenden Raum auf, die zum Luftaustausch dient. In einem Betriebszustand der Sintervorrichtung sind an dem Anschlussstutzen eine (nicht dargestellte) Vaku- umpumpe und ein (nicht dargestelltes) Belüftungsventil installiert. Die Sintervorrichtung umfasst ferner eine kombinierte Heiz-/Kühlvorrichtung 44, die am Bodenelement 28 innerhalb des ersten Teilraums 36 angeordnet ist und an ihrer dem Innenraum 24 der Sinterkammer 22 zugewandten Seite eine Ablagefläche 46 ausbildet, die zur Ablage der zu sinternden, angeordneten Ver- bundkörpern 10, 10' dient. Die Heiz-/Kühlvorrichtung 44 ist dazu vorgesehen, eine Temperatur in dem ersten Teilraum 36 und insbesondere eine Temperatur von auf der Ablagefläche 46 befindlichen, angeordneten Verbundkörper 10, 10' auf eine als Sintertemperatur vorbestimmte Temperatur zwischen 100°C und 350°C zu erhöhen oder eine gegenüber der normalen Raumtemperatur erhöhte Temperatur in dem ersten Teilraum 36 und der angeordneten Verbundkörper 10,The chamber wall 26 opposite the door in a closed state has, in an upper region of the first subspace 36, a gas-permeable connection 42 between the sintering chamber 22 and a space surrounding the sintering device, which space serves to exchange the air. In an operating state of the sintering device, a vacuum pump (not shown) and a ventilation valve (not shown) are installed on the connecting piece. The sintering device further comprises a combined heating / cooling device 44, which is arranged on the bottom element 28 within the first subspace 36 and forms on its inner side 24 of the sintering chamber 22 side facing a support surface 46, which for storing the sintered, arranged composite bodies 10, 10 'serves. The heating / cooling device 44 is provided to increase a temperature in the first compartment 36 and in particular a temperature of arranged on the shelf 46, arranged composite body 10, 10 'to a predetermined sintering temperature between 100 ° C and 350 ° C. or a temperature higher than the normal room temperature in the first compartment 36 and the arranged composite body 10,
10' zu erniedrigen. Dem Fachmann sind dazu geeignete Vorrichtungen geläufig, so dass an dieser Stelle darauf nicht näher eingegangen wird. 10 'to degrade. The person skilled in the art suitable devices are familiar, so that will not be discussed in detail at this point.
Des Weiteren weist der Raumteiler 32 ein in einem bevorzugt zentralen Bereich angeordnetes, verformbares Teilelement 34 auf, dessen Position relativ zu denFurthermore, the space divider 32 has a deformable partial element 34, which is arranged in a preferably central area and whose position is relative to the
Kammer-wänden 26 veränderbar ist. Das Teilelement 34 ist von einer elastisch verformbaren Membran aus Polytetrafluorethylen (PTFE) in Rechteckform gebildet, wobei die Seiten des Rechtecks gasdicht mit dem Raumteiler 32 verbunden sind. Alter-nativ kann das Teilelement 34 auch von einer elastisch verformbaren Membran aus einem Silikonelastomer gebildet sein. Durch Chamber walls 26 is changeable. The partial element 34 is formed by an elastically deformable membrane of polytetrafluoroethylene (PTFE) in a rectangular shape, wherein the sides of the rectangle are gas-tightly connected to the space divider 32. Alternatively, the partial element 34 may also be formed by an elastically deformable membrane of a silicone elastomer. By
Beaufschlagung mit einer Flächenpressung von 0,1 MPa ist das Teilelement 34 relativ zu den Kammerwänden 26 reversibel um maximal 5 mm auslenkbar.  Actuation with a surface pressure of 0.1 MPa, the sub-element 34 is reversible relative to the chamber walls 26 reversibly by a maximum of 5 mm deflected.
Zur Herstellung des Verbund körpers 10 werden zunächst in der in der Fig. 1 dargestellten Weise die Teilkörper 12, 14 und die in der Fügerichtung 16 zwischen den zwei Teilkörpern 12, 14 angeordnete, ungesinterte Fügeschicht 18 zu dem angeordneten Verbundkörper 10 angeordnet. To produce the composite body 10, the partial body 12, 14 and arranged in the joining direction 16 between the two partial bodies 12, 14, unsintered joining layer 18 are first arranged in the manner shown in FIG. 1 to the arranged composite body 10.
Anschließend wird der angeordnete Verbundkörper 10 auf der Ablagefläche 46 im ersten Teilraum 36 in unmittelbarer Nähe, in einem minimalen Abstand von etwa 2 mm unterhalb des elastisch verformbaren Teilelements 34 des Raumteilers 32 platziert. Subsequently, the arranged composite body 10 is placed on the support surface 46 in the first subspace 36 in the immediate vicinity, at a minimum distance of about 2 mm below the elastically deformable subelement 34 of the space divider 32.
Diese beiden Vorgänge werden wiederholt, bis eine gewünschte Anzahl angeordneter Verbundkörper 10, 10' unterhalb des elastisch verformbaren Teilelements 34 platziert ist. In einem nächsten Schritt wird ein von einer dünnen PTFE-Folie gebildetes Trennelement 48 zur Trennung der angeordneten Verbundkörper 10, 10' und des Raumteilers 32 auf die angeordneten Verbundkörper 10, 10' gelegt. These two operations are repeated until a desired number of arranged composite bodies 10, 10 'is placed below the elastically deformable partial element 34. In a next step, a separating element 48 formed by a thin PTFE film for separating the arranged composite bodies 10, 10 'and the space divider 32 is placed on the arranged composite bodies 10, 10'.
Dann wird die Tür der Sintervorrichtung geschlossen und eine positive Luftdruckdifferenz zwischen dem zweiten Teilraum 38 und dem ersten Teilraum 36 dadurch hergestellt, dass der Luftdruck im ersten Teilraum 36 mittels der Vakuumpumpe auf einen Wert unterhalb eines Umgebungsluftdruckwerts abgesenkt wird. Durch eine Absenkung des Luftdrucks auf einen Wert von 1 mbar wird das elastisch verformbare Teilelement 34 gleichmäßig in Richtung des ersten Teilraums 36 verformt (in der Fig. 2 gestrichelt dargestellt) und gelangt in Anlage mit den unterhalb des Teilelements 34 platzierten, angeordneten Verbundkörpern 10, 10' auf die dadurch trotz der vorhandenen Höhendifferenz 20 eine gleichmäßige Flächenpressung ausgeübt wird. Then, the door of the sintering apparatus is closed and a positive air pressure difference between the second subspace 38 and the first subspace 36 is established by lowering the air pressure in the first subspace 36 by the vacuum pump to a value below an ambient air pressure value. By lowering the air pressure to a value of 1 mbar, the elastically deformable subelement 34 is uniformly deformed in the direction of the first subspace 36 (shown in dashed lines in FIG. 2) and comes into abutment with the composite bodies 10 arranged below the subelement 34. 10 'on the thus despite the existing height difference 20 a uniform surface pressure is applied.
Nach Erreichen der vorbestimmten, positiven Luftdruckdifferenz zwischen dem zweiten Teilraum 38 und dem ersten Teilraum 36 wird durch Aktivierung eines Heizelements der Heiz-/Kühlvorrichtung 44 die Temperatur der angeordneten Verbundkörper 10, 10' auf eine als Sintertemperatur vorbestimmte Temperatur erhöht und für eine vorbestimmte Zeit eines Sintervorgangs aufrechterhalten. After reaching the predetermined, positive air pressure difference between the second subspace 38 and the first subspace 36 is activated by activation of a heating element of the heating / cooling device 44, the temperature of the arranged composite body 10, 10 'to a predetermined temperature as the sintering temperature and for a predetermined time Sintering process maintained.
Während des Sinterungsvorgangs bleibt die Flächenpressung auf die angeordneten Verbundkörper 10, 10' erhalten, da sowohl eine Längenausdehnung der Verbundkörper 10, 10' während einer anfänglichen Erhöhung der Temperatur auf die Sintertemperatur als auch eine Schrumpfung der Verbundkörper 10, 10' durch eine Dickenveränderung der Fügeschicht 18, 18' während des During the sintering process, the surface pressure on the disposed composites 10, 10 'is maintained because both elongation of the composites 10, 10' during an initial increase in temperature to the sintering temperature and shrinkage of the composites 10, 10 'by a thickness change of the bonding layer 18, 18 'during the
Sintervorgangs durch das elastisch verformbare Teilelement 34 ausgeglichen wird. Sintering process is compensated by the elastically deformable part element 34.
Durch den gegenüber dem normalen Luftdruck abgesenkten Luftdruck im ersten Teilraum 36 wird eine Reduzierung von Makroporen innerhalb der gesinterten Fügeschicht 18, 18' erreicht. As a result of the reduced air pressure in the first subspace 36 compared with the normal air pressure, a reduction of macropores within the sintered joining layer 18, 18 'is achieved.
Nach Ablauf der für den Sintervorgang vorbestimmten Zeit wird das Heizelement der Heiz-/Kühlvorrichtung 44 deaktiviert und ein Kühlelement der Heiz-/Kühlvor- richtung 44 aktiviert, um die Temperatur der nunmehr fertiggestellten Verbundkörper 10, 10' in einer vorbestimmten Zeit auf die Raumtemperatur abzusenken. After the predetermined time for the sintering process, the heating element of the heating / cooling device 44 is deactivated and a cooling element of the heating / cooling Direction 44 is activated to lower the temperature of the now completed composite body 10, 10 'in a predetermined time to room temperature.
Bei Erreichen der Raumtemperatur wird das Kühlelement der Heiz-/Kühlvorrich- tung 44 deaktiviert und der Luftdruck im ersten Teilraum 36 wird mittels desUpon reaching the room temperature, the cooling element of the heating / cooling device 44 is deactivated and the air pressure in the first subspace 36 is determined by means of the
Belüftungsventils an den Luftdruck der Umgebung angeglichen. Dadurch verformt sich das elastisch verformbare Teilelement 34 in reversibler Weise in seine Ausgangslage zurück und hebt sich von den Verbundkörpern 10, 10' ab, so dass die Flächenpressung auf den Verbundkörpern 10, 10' aufgehoben ist. Danach kann die Tür der Sintervorrichtung geöffnet und die fertiggestellten Ventilation valve adapted to the ambient air pressure. As a result, the elastically deformable sub-element 34 deforms in a reversible manner back to its original position and stands out from the composite bodies 10, 10 ', so that the surface pressure on the composite bodies 10, 10' is repealed. Thereafter, the door of the sintering device can be opened and the completed
Verbundkörper 10, 10' können entnommen werden.  Composite bodies 10, 10 'can be removed.

Claims

Ansprüche claims
Verfahren zur Herstellung eines Verbundkörpers (10, 10'), insbesondere eines Verbundkörpers (10, 10') zum Aufbau eines elektronischen Method for producing a composite body (10, 10 '), in particular a composite body (10, 10') for constructing an electronic body
Bauelements, der in einem fertiggestellten Zustand zumindest zwei  Component that in a finished state at least two
stoffschlüssig miteinander verbundene Teilkörper (12, 12', 14, 14') umfasst, wobei der Stoffschluss durch zumindest eine in einer Fügerichtung (16) zwischen den Teilkörpern (12, 12', 14, 14') angeordnete Fügeschicht (18,  cohesively interconnected part body (12, 12 ', 14, 14'), wherein the material connection by at least one in a joining direction (16) between the part bodies (12, 12 ', 14, 14') arranged joining layer (18,
18') herbeigeführt wird, die von einem gesinterten Werkstoff gebildet wird, gekennzeichnet durch folgende Schritte:  18 ') formed by a sintered material, characterized by the following steps:
a) Erstellen einer Anordnung der zumindest zwei Teilkörper (12, 12', 14, 14') und der in der Fügerichtung (16) zwischen den zumindest zwei Teilkörpern (12, 12', 14, 14') angeordneten, zumindest einen ungesinterten Fügeschicht (18, 18') zu einem angeordneten Verbundkörper (10, 10'),  a) creating an arrangement of the at least two partial bodies (12, 12 ', 14, 14') and in the joining direction (16) between the at least two partial bodies (12, 12 ', 14, 14') arranged, at least one unsintered joining layer (18, 18 ') to an arranged composite body (10, 10'),
b) Platzieren des angeordneten Verbundkörpers (10, 10') in einen ersten  b) placing the arranged composite body (10, 10 ') in a first
Teilraum (36) einer im Wesentlichen gasdicht verschließbaren Sinterkammer (22) mit Kammerwänden (26) und einem im Wesentlichen gasundurchlässigen Raumteiler (32), der die Sinterkammer (22) in den ersten Teilraum (36) und zumindest einen zweiten Teilraum (38) aufteilt, in unmittelbarer Nähe des Raumteilers (32), wobei der Raumteiler (32) zumindest ein verformbares Teilelement (34) aufweist, dessen Position durch eine Druckdifferenz zwischen dem ersten und dem zweiten Teilraum (36, 38) relativ zu den Kammerwänden (26) veränderbar ist,  Subspace (36) of a substantially gas-tight sealable sintering chamber (22) with chamber walls (26) and a substantially gas-impermeable space divider (32) dividing the sintering chamber (22) in the first subspace (36) and at least a second subspace (38) , in the immediate vicinity of the room divider (32), wherein the space divider (32) at least one deformable part element (34) whose position by a pressure difference between the first and the second subspace (36, 38) relative to the chamber walls (26) changeable is
c) Herstellen einer positiven Raumdruckdifferenz zwischen dem zweiten  c) establishing a positive volume pressure difference between the second
Teilraum (38) und dem ersten Teilraum (36), und  Subspace (38) and the first subspace (36), and
d) Erhitzen des angeordneten Verbundkörpers (10, 10') zumindest bis auf eine als Sintertemperatur vorbestimmte Temperatur.  d) heating the arranged composite body (10, 10 ') at least to a temperature predetermined as the sintering temperature.
2. Verfahren nach Anspruch 1 , dadurch gekennzeichnet, dass die positive 2. The method according to claim 1, characterized in that the positive
Raumdruckdifferenz zwischen dem zweiten Teilraum (38) und dem ersten  Room pressure difference between the second subspace (38) and the first
Teilraum (36) dadurch hergestellt wird, dass der Luftdruck im ersten Teilrau auf einen Wert unterhalb eines Umgebungsluftdruckwerts abgesenkt wird und/oder der Luftdruck im zweiten Teilraum (38) auf einen Wert oberhalb eines Part space (36) is produced by the air pressure in the first Teilrau is lowered to a value below an ambient air pressure value and / or the air pressure in the second subspace (38) to a value above one
Umgebungsluftdruckes erhöht wird. Ambient air pressure is increased.
Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der angeordnete Verbundkörper (10, 10') im ersten Teilraum (36) unterhalb des Teilelements (34) angeordnet wird. A method according to claim 1 or 2, characterized in that the arranged composite body (10, 10 ') in the first subspace (36) below the sub-element (34) is arranged.
Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schritte a) und b) zu einer Herstellung zumindest zweier angeordneter Verbundkörper (10, 10') zumindest zweifach durchgeführt werden, bevor die Schritte c) und d) ausgeführt werden. Method according to one of the preceding claims, characterized in that the steps a) and b) for producing at least two arranged composite bodies (10, 10 ') are carried out at least two times before the steps c) and d) are carried out.
Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass anschließend an den Schritt b) ein Trennelement (48) zwischen den angeordneten Verbundkörpern (10, 10') und dem Raumteiler (32) angeordnet wird. Method according to one of the preceding claims, characterized in that subsequent to step b), a separating element (48) between the arranged composite bodies (10, 10 ') and the space divider (32) is arranged.
Sintervorrichtung zur Herstellung eines Verbundkörpers (10, 10'), insbesondere eines Verbundkörpers (10, 10') zum Aufbau eines elektronischen Bauelements, nach einem der Verfahren nach einem der Ansprüche 1 bis 5, umfassend: Sintering device for producing a composite body (10, 10 '), in particular a composite body (10, 10') for constructing an electronic component, according to one of the methods according to one of claims 1 to 5, comprising:
eine im Wesentlichen gasdicht verschließbare Sinterkammer (22) mit die Sinterkammer (22) begrenzenden Kammerwänden (26),  a substantially gastight sealable sintering chamber (22) with the sintering chamber (22) bounding chamber walls (26),
einen im Wesentlichen gasundurchlässigen Raumteiler (32), der die Sinterkammer (22) in einen ersten Teilraum (36) und zumindest einen zweiten Teilraum (38) aufteilt,  a substantially gas-impermeable space divider (32) which divides the sintering chamber (22) into a first subspace (36) and at least one second subspace (38),
eine Druck erhöhende und/oder Druck vermindernde Vorrichtung zur  a pressure-increasing and / or pressure-reducing device for
Ausbildung einer positiven Raumdruckdifferenz zwischen dem ersten und dem zweiten Teilraum, Forming a positive volume pressure difference between the first and the second subspace,
zumindest eine Heizvorrichtung (44) zur Erhöhung einer Temperatur in zumindest einem der Teilräume (36, 38) auf eine als Sintertemperatur vorbestimmte Temperatur, wobei der Raumteiler (32) zumindest ein verformbares Teilelement (34) aufweist, dessen Position durch eine Raumdruckdifferenz zwischen dem ersten und dem zweiten Teilraum (36, 38) relativ zu den Kammerwänden (26) veränderbar ist. Sintervorrichtung nach Anspruch 6, dadurch gekennzeichnet, dass das verformbare Teilelement (34) elastisch verformbar ausgebildet ist. at least one heating device (44) for raising a temperature in at least one of the subspaces (36, 38) to a temperature predetermined as the sintering temperature, wherein the space divider (32) has at least one deformable subelement (34) whose position is defined by a volume pressure difference between the first and the second subspace (36, 38) is variable relative to the chamber walls (26). Sintering device according to claim 6, characterized in that the deformable part element (34) is formed elastically deformable.
Sintervorrichtung nach zumindest einem der Ansprüche 6 oder 7, gekennzeichnet durch ein Trennelement (48) zur Trennung der angeordneten Verbundkörper (10) und des Raumteilers (32). Sintering device according to at least one of claims 6 or 7, characterized by a separating element (48) for separating the arranged composite bodies (10) and the room divider (32).
EP12816024.9A 2012-01-03 2012-12-11 Method for producing a composite body having a sintered joining layer and sintering device for producing such a composite body Withdrawn EP2801106A1 (en)

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DE102012200034A DE102012200034A1 (en) 2012-01-03 2012-01-03 Method for producing a composite body with sintered joining layer and sintering device for producing such a composite body
PCT/EP2012/075048 WO2013102534A1 (en) 2012-01-03 2012-12-11 Method for producing a composite body having a sintered joining layer and sintering device for producing such a composite body

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Family Cites Families (8)

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US5352629A (en) * 1993-01-19 1994-10-04 General Electric Company Process for self-alignment and planarization of semiconductor chips attached by solder die adhesive to multi-chip modules
JPH09194909A (en) * 1995-11-07 1997-07-29 Sumitomo Electric Ind Ltd Composite material and its production
US6172878B1 (en) * 1997-12-27 2001-01-09 Canon Kabushiki Kaisha Multi-element module and production process thereof
JP3381781B2 (en) * 1998-12-25 2003-03-04 ソニーケミカル株式会社 Method of manufacturing electronic component connection body and manufacturing apparatus therefor
JP4077181B2 (en) * 2001-09-27 2008-04-16 本田技研工業株式会社 Metal or ceramic bonding material and metal or ceramic bonding method
DE102007046901A1 (en) 2007-09-28 2009-04-09 W.C. Heraeus Gmbh Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas
US8253233B2 (en) * 2008-02-14 2012-08-28 Infineon Technologies Ag Module including a sintered joint bonding a semiconductor chip to a copper surface
DE102010020696B4 (en) * 2010-05-17 2012-11-08 Danfoss Silicon Power Gmbh Method for NTV sintering of a three-dimensional contours semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
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