EP2780945A4 - Optical tilted charge devices and methods - Google Patents
Optical tilted charge devices and methodsInfo
- Publication number
- EP2780945A4 EP2780945A4 EP12850478.4A EP12850478A EP2780945A4 EP 2780945 A4 EP2780945 A4 EP 2780945A4 EP 12850478 A EP12850478 A EP 12850478A EP 2780945 A4 EP2780945 A4 EP 2780945A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- methods
- charge devices
- tilted charge
- optical tilted
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161629181P | 2011-11-14 | 2011-11-14 | |
US201161629175P | 2011-11-14 | 2011-11-14 | |
PCT/US2012/064778 WO2013074496A1 (en) | 2011-11-14 | 2012-11-13 | Optical tilted charge devices and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2780945A1 EP2780945A1 (en) | 2014-09-24 |
EP2780945A4 true EP2780945A4 (en) | 2015-11-04 |
Family
ID=48430076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12850478.4A Withdrawn EP2780945A4 (en) | 2011-11-14 | 2012-11-13 | Optical tilted charge devices and methods |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP2780945A4 (en) |
CN (1) | CN103930994A (en) |
TW (1) | TW201332238A (en) |
WO (1) | WO2013074496A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870166B (en) * | 2016-04-22 | 2019-02-12 | 杭州立昂东芯微电子有限公司 | A kind of indium gallium phosphorus Heterojunction Bipolar Transistors and its manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723250A (en) * | 1985-12-20 | 1988-02-02 | Ga Technologies Inc. | Solid state cyclotron laser |
US4845514A (en) * | 1986-09-19 | 1989-07-04 | Shinko Electric Co., Ltd. | Thermal transfer type line printer capable of setting printing density by command supplied from an external device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593589B1 (en) * | 1998-01-30 | 2003-07-15 | The University Of New Mexico | Semiconductor nitride structures |
US6756325B2 (en) * | 2002-05-07 | 2004-06-29 | Agilent Technologies, Inc. | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region |
US7244997B2 (en) * | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
JP2007066981A (en) * | 2005-08-29 | 2007-03-15 | Toshiba Corp | Semiconductor device |
WO2007121524A1 (en) * | 2006-04-20 | 2007-11-01 | Epitactix Pty Ltd. | Method of manufacture and resulting structures for semiconductor devices |
US8509274B2 (en) * | 2009-01-08 | 2013-08-13 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
JP5653934B2 (en) * | 2009-01-08 | 2015-01-14 | ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ | Light emitting and laser semiconductor device and method |
-
2012
- 2012-11-13 EP EP12850478.4A patent/EP2780945A4/en not_active Withdrawn
- 2012-11-13 CN CN201280055790.2A patent/CN103930994A/en active Pending
- 2012-11-13 WO PCT/US2012/064778 patent/WO2013074496A1/en active Application Filing
- 2012-11-14 TW TW101142506A patent/TW201332238A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723250A (en) * | 1985-12-20 | 1988-02-02 | Ga Technologies Inc. | Solid state cyclotron laser |
US4845514A (en) * | 1986-09-19 | 1989-07-04 | Shinko Electric Co., Ltd. | Thermal transfer type line printer capable of setting printing density by command supplied from an external device |
Non-Patent Citations (4)
Title |
---|
CHAO-HSIN WU ET AL: "4-GHz Modulation Bandwidth of Integrated 22 LED Array", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 21, no. 24, 15 December 2009 (2009-12-15), pages 1834 - 1836, XP011284612, ISSN: 1041-1135, DOI: 10.1109/LPT.2009.2034385 * |
FENG M ET AL: "Tunnel junction transistor laser", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 94, no. 4, 29 January 2009 (2009-01-29), pages 41118 - 41118, XP012118719, ISSN: 0003-6951, DOI: 10.1063/1.3077020 * |
See also references of WO2013074496A1 * |
WALTER G ET AL: "Tilted-charge high speed (7 GHz) light emitting diode", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 94, no. 23, 12 June 2009 (2009-06-12), pages 231125 - 231125, XP012121576, ISSN: 0003-6951, DOI: 10.1063/1.3154565 * |
Also Published As
Publication number | Publication date |
---|---|
TW201332238A (en) | 2013-08-01 |
WO2013074496A1 (en) | 2013-05-23 |
EP2780945A1 (en) | 2014-09-24 |
CN103930994A (en) | 2014-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20140527 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAX | Request for extension of the european patent (deleted) | ||
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/737 20060101AFI20150604BHEP Ipc: H01S 5/062 20060101ALI20150604BHEP Ipc: H01L 29/778 20060101ALI20150604BHEP Ipc: H01L 33/00 20100101ALI20150604BHEP |
|
RA4 | Supplementary search report drawn up and despatched (corrected) |
Effective date: 20151006 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 33/00 20100101ALI20150930BHEP Ipc: H01S 5/062 20060101ALI20150930BHEP Ipc: H01L 29/778 20060101ALI20150930BHEP Ipc: H01L 29/737 20060101AFI20150930BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20160503 |