EP2748847A4 - Structure de tranche pour la fabrication de circuits intégrés électroniques - Google Patents

Structure de tranche pour la fabrication de circuits intégrés électroniques

Info

Publication number
EP2748847A4
EP2748847A4 EP12826159.1A EP12826159A EP2748847A4 EP 2748847 A4 EP2748847 A4 EP 2748847A4 EP 12826159 A EP12826159 A EP 12826159A EP 2748847 A4 EP2748847 A4 EP 2748847A4
Authority
EP
European Patent Office
Prior art keywords
integrated circuit
circuit manufacturing
wafer structure
electronic integrated
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12826159.1A
Other languages
German (de)
English (en)
Other versions
EP2748847A1 (fr
Inventor
David B Kerwin
Joseph M Benedetto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cobham Colorado Springs Inc
Original Assignee
Aeroflex Colorado Springs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/218,335 external-priority patent/US9312133B2/en
Priority claimed from US13/218,345 external-priority patent/US20130049175A1/en
Priority claimed from US13/218,308 external-priority patent/US9396947B2/en
Priority claimed from US13/218,273 external-priority patent/US9378955B2/en
Priority claimed from US13/218,352 external-priority patent/US20130049178A1/en
Priority claimed from US13/218,292 external-priority patent/US9378956B2/en
Application filed by Aeroflex Colorado Springs Inc filed Critical Aeroflex Colorado Springs Inc
Publication of EP2748847A1 publication Critical patent/EP2748847A1/fr
Publication of EP2748847A4 publication Critical patent/EP2748847A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
EP12826159.1A 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques Withdrawn EP2748847A4 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13/218,335 US9312133B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,345 US20130049175A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,308 US9396947B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,273 US9378955B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,352 US20130049178A1 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
US13/218,292 US9378956B2 (en) 2011-08-25 2011-08-25 Wafer structure for electronic integrated circuit manufacturing
PCT/US2012/052293 WO2013028983A1 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Publications (2)

Publication Number Publication Date
EP2748847A1 EP2748847A1 (fr) 2014-07-02
EP2748847A4 true EP2748847A4 (fr) 2016-06-01

Family

ID=47746901

Family Applications (6)

Application Number Title Priority Date Filing Date
EP12825755.7A Withdrawn EP2748845A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12826508.9A Withdrawn EP2748848A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12826159.1A Withdrawn EP2748847A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12825109.7A Withdrawn EP2748844A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12854047.3A Withdrawn EP2748849A4 (fr) 2011-08-25 2012-08-24 Structure de tranches pour circuit intégré électronique
EP12825811.8A Withdrawn EP2748846A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP12825755.7A Withdrawn EP2748845A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12826508.9A Withdrawn EP2748848A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Family Applications After (3)

Application Number Title Priority Date Filing Date
EP12825109.7A Withdrawn EP2748844A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques
EP12854047.3A Withdrawn EP2748849A4 (fr) 2011-08-25 2012-08-24 Structure de tranches pour circuit intégré électronique
EP12825811.8A Withdrawn EP2748846A4 (fr) 2011-08-25 2012-08-24 Structure de tranche pour la fabrication de circuits intégrés électroniques

Country Status (2)

Country Link
EP (6) EP2748845A4 (fr)
WO (6) WO2013028988A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2996152B1 (fr) 2014-09-15 2017-03-15 ABB Schweiz AG Diode de puissance à haute fréquence et sa méthode de manufacture
DE102017002935A1 (de) 2017-03-24 2018-09-27 3-5 Power Electronics GmbH III-V-Halbleiterdiode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0327316A2 (fr) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Dispositif semi-conducteur avec substrat composite formé par deux substrats semi-conducteurs en contact étroit
US4935386A (en) * 1987-02-26 1990-06-19 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating
EP0889509A2 (fr) * 1997-06-30 1999-01-07 Harris Corporation ContrÔle de la durée de vie pour des dispositifs semi-conducteurs

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
DE3435464A1 (de) * 1984-09-27 1986-04-10 Robert Bosch Gmbh, 7000 Stuttgart Gleichrichterdiode
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
DE4036222A1 (de) * 1990-11-14 1992-05-21 Bosch Gmbh Robert Verfahren zur herstellung von halbleiterelementen, insbesondere von dioden
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
JPH07263721A (ja) * 1994-03-25 1995-10-13 Nippondenso Co Ltd 半導体装置及びその製造方法
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor
US6027956A (en) * 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
US6346460B1 (en) * 1999-03-30 2002-02-12 Seh-America Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture
ATE456092T1 (de) * 2000-04-11 2010-02-15 Boeing Co Verarbeitungssystem mit mehrheitsentscheidung
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
EP1949425A4 (fr) * 2005-10-14 2010-08-18 Silicon Space Technology Corp Structures d'isolation protegees contre le rayonnement et procedes de fabrication
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
US7566951B2 (en) * 2006-04-21 2009-07-28 Memc Electronic Materials, Inc. Silicon structures with improved resistance to radiation events
JP5320679B2 (ja) * 2007-02-28 2013-10-23 富士電機株式会社 半導体装置およびその製造方法
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
KR20090106828A (ko) * 2008-04-07 2009-10-12 삼성전자주식회사 웨이퍼 본딩 방법 및 그 방법에 의해 본딩된 웨이퍼 구조체
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode
US8288798B2 (en) * 2010-02-10 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Step doping in extensions of III-V family semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935386A (en) * 1987-02-26 1990-06-19 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating
EP0327316A2 (fr) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Dispositif semi-conducteur avec substrat composite formé par deux substrats semi-conducteurs en contact étroit
EP0889509A2 (fr) * 1997-06-30 1999-01-07 Harris Corporation ContrÔle de la durée de vie pour des dispositifs semi-conducteurs

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHING-FA YEH ET AL: "THE NOVEL PREPARATION OF P-N JUNCTION MESA DIODES BY SILICON-WAFER DIRECT BONDING (SDB)", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 31, no. 5A, 1 May 1992 (1992-05-01), pages 1535 - 1540, XP000355403, ISSN: 0021-4922, DOI: 10.1143/JJAP.31.1535 *
See also references of WO2013028983A1 *

Also Published As

Publication number Publication date
EP2748846A1 (fr) 2014-07-02
WO2013081694A3 (fr) 2013-10-24
WO2013028973A1 (fr) 2013-02-28
WO2013028986A1 (fr) 2013-02-28
EP2748845A1 (fr) 2014-07-02
EP2748844A1 (fr) 2014-07-02
EP2748846A4 (fr) 2015-11-11
EP2748845A4 (fr) 2015-07-08
WO2013028976A1 (fr) 2013-02-28
EP2748848A4 (fr) 2015-06-10
EP2748849A4 (fr) 2015-12-16
WO2013028983A1 (fr) 2013-02-28
EP2748844A4 (fr) 2015-11-04
WO2013028988A1 (fr) 2013-02-28
EP2748847A1 (fr) 2014-07-02
EP2748849A2 (fr) 2014-07-02
EP2748848A1 (fr) 2014-07-02
WO2013081694A2 (fr) 2013-06-06

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