EP2694448A1 - Glass substrate with slightly rough layer - Google Patents
Glass substrate with slightly rough layerInfo
- Publication number
- EP2694448A1 EP2694448A1 EP12718284.8A EP12718284A EP2694448A1 EP 2694448 A1 EP2694448 A1 EP 2694448A1 EP 12718284 A EP12718284 A EP 12718284A EP 2694448 A1 EP2694448 A1 EP 2694448A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- glass substrate
- layer
- crystallites
- substrate according
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 239000011521 glass Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract 3
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 230000002745 absorbent Effects 0.000 claims description 4
- 239000002250 absorbent Substances 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000013508 migration Methods 0.000 claims description 3
- 230000005012 migration Effects 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- 230000001699 photocatalysis Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 45
- 238000004140 cleaning Methods 0.000 description 6
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C15/00—Details
- F24C15/02—Doors specially adapted for stoves or ranges
- F24C15/04—Doors specially adapted for stoves or ranges with transparent panels
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/77—Coatings having a rough surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/1525—Deposition methods from the vapour phase by cvd by atmospheric CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to the coating of a rough inorganic layer and / or having surface irregularities with acute angles and / or spikes and deposited on a particular glass substrate, by an amorphous or nanocrystalline layer, in order to reduce or eliminate the surface roughness and / or rounding or softening surface irregularities.
- the assembly constituted by the substrate and the layers is in particular transparent, the layers conferring on the whole of the properties for example optical (blur, diffusion, absorption of light, coloration %) and / or thermal (low-emissivity, control solar -reflection of part of solar radiation -%) and / or electrical (conductivity %) and / or catalytic (self-cleaning ).
- TCO transparent conductive oxide
- CVD chemical vapor deposition
- the disadvantage of the thermal CVD comes from the fact that, since the glass is hot, the layer obtained is generally well crystallized, that is to say predominantly contains relatively large crystallites, and thus has a non-zero roughness on the surface.
- Roughness here refers, in common, the height between the highest points of an irregular surface (vertices) and the lowest (valleys). This surface roughness results in a high blur value that is sought to avoid in certain applications, in which it is considered aesthetically unpleasant or visually troublesome.
- the well-crystallized layer obtained has surface irregularities forming sharp-edged asperities which may hinder or even prevent cleaning of the surface.
- the invention which relates to a glass substrate, characterized in that it is provided with a layer consisting of crystallites of at least 25 nm, directly covered with a layer consisting of crystallites of at most 10 nm.
- a layer consisting of crystallites of at least 25 nm, or at most 10 nm is mainly composed of crystallites whose largest dimension is such.
- a layer consisting of crystallites of at least 25 nm results from thermal CVD deposition on glass usually at about 600 ° C.
- the two layers of the glass substrate of the invention consist of identical or different materials.
- the size of the crystallites is here determined from the X-ray diffraction measurements (XRD) carried out on the crystallized layers.
- XRD X-ray diffraction measurements
- the X-ray diffraction apparatus is used in theta-theta mode on a plane parallel to the surface of the sample.
- the indicated size is the minimum size for 25 nm, respectively maximum for 10 nm, among the sizes obtained for each of the diffraction peaks.
- the thickness of the layer consisting of crystallites of at most 10 nm can reach values of 700 nm, or even up to 2 ⁇ .
- the thickness of the crystallite layer of at least 25 nm is not limited; it is for example at most equal to 2, preferably 1, 5 ⁇ ; and a minimum average thickness of the order of the size of the crystallites (from 25 nm) is conceivable.
- the thickness of the layer of crystallites of at most 10 nm is at most equal to 350, preferably 250 nm; the inventors have found that a maximum thickness of 350 nm of coating consisting of crystallites of at most 10 nm provides a desired effective smoothing of an underlying functional layer deposited by thermal CVD, by decreasing or even eliminating the surface roughness and / or rounding out small pointed growths with possible maintenance of the roughness in this case; this effect is still obtained at thicknesses of this layer of 100 nm, and even up to thicknesses of this layer of 10 or even 5 nm;
- the glass substrate is directly covered with a barrier layer vis-à-vis the migration of alkali glass;
- the barrier layer is therefore under the layer consisting of crystallites of at least 25 nm, either directly or with the interposition of one or more other layers;
- the function of the barrier layer is to prevent the contamination of the upper layers by the sodium ions of the glass, when the glass is in particular conditions, especially at elevated temperature; it may consist of silica or silicon oxycarbide SiOC;
- the layer of crystallites of at least 25 nm on the one hand, of at most 10 nm on the other hand, is a transparent oxide layer, electroconductive or not; examples of transparent conductive oxides Sn0 2 : F, SnO 2 : Sb, ZnO: Al, ZnO: Ga, InO: Sn, ZnO: 1n, and examples of non-conductive transparent oxides Sn0 2 , ZnO, InO; the transparent oxide constituting these layers can be photocatalytic, such as Ti0 2 , that is to say have properties of radical oxidizing initiator under solar radiation (hydrocarbon degradation properties, self-cleaning).
- the invention also relates to
- a method of manufacturing a glass substrate defined above in which the layers consisting of crystallites of at least 25 nm, respectively at most 10 nm, are formed by chemical vapor deposition at a temperature of the substrate relatively high (especially at least 500, preferably 550 ° C), respectively relatively low (in particular at least equal to 300 ° C and at most equal to 550, preferably 500 ° C);
- a glass substrate described above in a photovoltaic cell electrode in which the layer composed of crystallites of at most 10 nm rounds and / or softens the surface irregularities with acute angles and / or spikes the layer consisting of crystallites of at least 25 nm, but without necessarily reducing its roughness, and is coated with amorphous or microcrystalline silicon as an absorbent;
- the crystallite layer of at most 10 nm has a flat surface (zero roughness), and is coated with CdTe as absorbent;
- the relatively conductive layer such as Sn0 2 : F consisting of crystallites of at least 25 nm is then covered with the layer of crystallites of at most 10 nm, necessarily non-conductive (in English "buffer layer"), such as Sn0 2 , which is advantageously flat and smooth because CdTe, absorbing relatively large amounts of light, does not require light trapping by the underlying layers; and
- the substrate consists of 4 mm thick float soda-lime glass sold under the registered trade name Planilux® by Saint-Gobain Glass France, provided with a 25 nm SiOC layer constituting a barrier against the migration of alkaline glass.
- the first deposit is made under the following conditions:
- Substrate running speed (direction perpendicular to the width): 12 m / min
- Air flow (80% nitrogen, 20% oxygen by volume) total: 1,195 l / min.
- a 400 nm thick layer consisting of Sn0 2 crystallites of at least 25-30 nm is obtained.
- the blur of the coated substrate is 17%.
- the second deposit is made under the following conditions:
- Substrate temperature 450 ° C
- a second 150 nm thick layer consisting of Sn0 2 crystallites of about 6 nm is obtained.
- the blur of the substrate coated with the layers of the first and second deposits is 17.1%.
- the layer of the second deposit maintained the properties of the substrate before it was deposited.
- the only modification was the smoothing of the surface facilitating its cleaning; it is found that a cloth-type cleaning means is no longer hooked by the asperities with sharp corners of the surface, which have been more or less covered and / or rounded.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
Abstract
The invention relates to - a glass substrate, characterized in that it is provided with a layer constituted of crystallites of at least 25 nm, covered directly with a layer constituted of crystallites of at most 10 nm; - the process for manufacturing same; - the applications thereof in a photovoltaic cell electrode, as low-emissivity glazing or in solar control.
Description
SUBSTRAT VERRIER A COUCHE FAIBLEMENT RUGUEUSE LOW RUGGED LAYER VERRIER SUBSTRATE
La présente invention a trait au revêtement d'une couche inorganique rugueuse et/ou présentant des irrégularités de surface à angles aigus et/ou en pointes et déposée sur un substrat notamment verrier, par une couche amorphe ou nanocristalline, afin de réduire ou supprimer la rugosité de surface et/ou arrondir ou adoucir les irrégularités de surface. The present invention relates to the coating of a rough inorganic layer and / or having surface irregularities with acute angles and / or spikes and deposited on a particular glass substrate, by an amorphous or nanocrystalline layer, in order to reduce or eliminate the surface roughness and / or rounding or softening surface irregularities.
L'ensemble constitué par le substrat et les couches est notamment transparent, les couches conférant à l'ensemble des propriétés par exemple optiques (flou, diffusion, absorption de lumière, coloration...) et/ou thermiques (bas-émissivité, contrôle solaire -réflexion d'une partie du rayonnement solaire-...) et/ou électriques (conductivité...) et/ou catalytiques (autonettoyant...). The assembly constituted by the substrate and the layers is in particular transparent, the layers conferring on the whole of the properties for example optical (blur, diffusion, absorption of light, coloration ...) and / or thermal (low-emissivity, control solar -reflection of part of solar radiation -...) and / or electrical (conductivity ...) and / or catalytic (self-cleaning ...).
Par exemple, la réalisation de vitrages bas-émissifs pour des applications de type bâtiment ou véhicule de transport (automobile...) nécessite le dépôt d'une couche d'oxyde conductrice transparente (TCO pour Transparent Conductive Oxide en anglais) sur un substrat verrier. Une voie couramment utilisée consiste à déposer de l'oxyde d'étain dopé au fluor par dépôt chimique en phase vapeur (CVD pour Chemical Vapor Déposition en anglais) thermique. For example, the production of low-emissivity glazing for building or transport vehicle (automotive) applications requires the deposition of a transparent conductive oxide (TCO) layer on a substrate. glass. One commonly used route is to deposit fluorine doped tin oxide by chemical vapor deposition (CVD).
L'inconvénient de la CVD thermique provient de ce que, le verre étant chaud, la couche obtenue est généralement bien cristallisée, c'est-à-dire comporte majoritairement des cristallites relativement grosses, et présente ainsi en surface une rugosité non nulle. La rugosité désigne ici, de manière commune, la hauteur entre les points les plus élevés d'une surface irrégulière (sommets) et les moins élevés (vallées). Cette rugosité de surface se traduit par une valeur de flou élevée que l'on cherche à éviter dans certaines applications, dans lesquelles elle est considérée esthétiquement peu agréable ou visuellement gênante. The disadvantage of the thermal CVD comes from the fact that, since the glass is hot, the layer obtained is generally well crystallized, that is to say predominantly contains relatively large crystallites, and thus has a non-zero roughness on the surface. Roughness here refers, in common, the height between the highest points of an irregular surface (vertices) and the lowest (valleys). This surface roughness results in a high blur value that is sought to avoid in certain applications, in which it is considered aesthetically unpleasant or visually troublesome.
De plus la couche bien cristallisée obtenue présente des irrégularités de surface formant des aspérités à angles aigus, susceptibles de gêner, voire empêcher le nettoyage de la surface. In addition, the well-crystallized layer obtained has surface irregularities forming sharp-edged asperities which may hinder or even prevent cleaning of the surface.
Dans des applications de type électrode de cellule photovoltaïque, de telles aspérités à la surface d'une couche de TCO peuvent induire des phénomènes de court-circuit avec la couche active absorbante (silicium amorphe, CdTe...) sur-jacente. Ceci se traduit par une baisse de performance de la cellule photovoltaïque, notamment au travers de la réduction de la tension en circuit ouvert.
Les inventeurs se sont donc donnés pour objectif de diminuer voire supprimer la rugosité de couches telles qu'obtenues sur substrat verrier chaud par CVD thermique, et/ou arrondir ou adoucir leurs irrégularités de surface à angles aigus (formant des pointes), éventuellement avec maintien de la rugosité. In applications of photovoltaic cell electrode type, such asperities on the surface of a TCO layer can induce short-circuit phenomena with the absorbing active layer (amorphous silicon, CdTe ...) overlying. This results in a decrease in performance of the photovoltaic cell, especially through the reduction of the open circuit voltage. The inventors have therefore set themselves the objective of reducing or even eliminating the roughness of layers such as obtained on hot glass substrate by thermal CVD, and / or rounding or softening their surface irregularities at acute angles (forming points), possibly with maintenance. roughness.
Cet objectif est atteint par l'invention, qui a pour objet un substrat verrier, caractérisé en ce qu'il est muni d'une couche constituée de cristallites d'au moins 25 nm, recouverte directement d'une couche constituée de cristallites d'au plus 10 nm. Selon l'invention une couche constituée de cristallites d'au moins 25 nm, ou d'au plus 10 nm, est majoritairement constituée de cristallites dont la plus grande dimension est telle. Une couche constituée de cristallites d'au moins 25 nm résulte d'un dépôt par CVD thermique sur verre habituellement à 600 °C environ. This object is achieved by the invention, which relates to a glass substrate, characterized in that it is provided with a layer consisting of crystallites of at least 25 nm, directly covered with a layer consisting of crystallites of at most 10 nm. According to the invention, a layer consisting of crystallites of at least 25 nm, or at most 10 nm, is mainly composed of crystallites whose largest dimension is such. A layer consisting of crystallites of at least 25 nm results from thermal CVD deposition on glass usually at about 600 ° C.
Les deux couches du substrat verrier de l'invention sont constituées de matériaux identiques ou différents. The two layers of the glass substrate of the invention consist of identical or different materials.
La taille des cristallites est ici déterminée à partir des mesures de diffraction X (DRX) réalisées sur les couches cristallisées. L'appareil de diffraction X est utilisé en mode theta-theta sur un plan parallèle à la surface de l'échantillon. Le calcul de la taille des grains utilise la relation de Scherrer (k=0.9, largeur instrumentale déterminée à partir des paramètres fondamentaux) et tout l'élargissement du pic est attribué à un effet de taille (profil type Pearson VII utilisé). La taille indiquée est la taille minimale pour 25nm, respectivement maximale pour 10nm, parmi les tailles obtenues pour chacun des pics de diffraction. The size of the crystallites is here determined from the X-ray diffraction measurements (XRD) carried out on the crystallized layers. The X-ray diffraction apparatus is used in theta-theta mode on a plane parallel to the surface of the sample. The calculation of the grain size uses the Scherrer relation (k = 0.9, instrumental width determined from the fundamental parameters) and all the widening of the peak is attributed to a size effect (Pearson VII type profile used). The indicated size is the minimum size for 25 nm, respectively maximum for 10 nm, among the sizes obtained for each of the diffraction peaks.
L'épaisseur de la couche constituée de cristallites d'au plus 10 nm peut atteindre des valeurs de 700 nm, voire jusqu'à 2 μηι. The thickness of the layer consisting of crystallites of at most 10 nm can reach values of 700 nm, or even up to 2 μηι.
L'épaisseur de la couche de cristallites d'au moins 25 nm n'est pas limitée ; elle est par exemple au plus égale à 2, de préférence 1 ,5 μηη ; et une épaisseur minimale moyenne de l'ordre de la dimension des cristallites (à partir de 25 nm) est envisageable. The thickness of the crystallite layer of at least 25 nm is not limited; it is for example at most equal to 2, preferably 1, 5 μηη; and a minimum average thickness of the order of the size of the crystallites (from 25 nm) is conceivable.
Selon d'autres caractéristiques préférées du substrat verrier de l'invention : According to other preferred characteristics of the glass substrate of the invention:
- l'épaisseur de la couche de cristallites d'au plus 10 nm est au plus égale à 350, de préférence 250 nm ; les inventeurs se sont aperçus qu'une épaisseur maximale de 350 nm de revêtement constitué de cristallites d'au plus 10 nm procurait un lissage efficace recherché d'une couche fonctionnelle sous- jacente déposée par CVD thermique, en en diminuant voire supprimant la
rugosité de surface et/ou en en arrondissant les petites excroissances pointues avec maintien éventuel de la rugosité dans ce cas ; on obtient encore cet effet à des épaisseurs de cette couche de 100 nm, et même jusqu'à des épaisseurs de cette couche de 10, voire 5 nm ; the thickness of the layer of crystallites of at most 10 nm is at most equal to 350, preferably 250 nm; the inventors have found that a maximum thickness of 350 nm of coating consisting of crystallites of at most 10 nm provides a desired effective smoothing of an underlying functional layer deposited by thermal CVD, by decreasing or even eliminating the surface roughness and / or rounding out small pointed growths with possible maintenance of the roughness in this case; this effect is still obtained at thicknesses of this layer of 100 nm, and even up to thicknesses of this layer of 10 or even 5 nm;
le substrat verrier est recouvert directement d'une couche barrière vis-à-vis de la migration des alcalins du verre ; la couche barrière est donc sous la couche constituée de cristallites d'au moins 25 nm, soit directement soit avec interposition d'une ou plusieurs autres couches ; la couche barrière a pour fonction d'empêcher la contamination des couches supérieures par les ions sodium du verre, quand le verre est dans des conditions particulières, notamment à température élevée ; elle peut être constituée de silice ou d'oxycarbure de silicium SiOC ; the glass substrate is directly covered with a barrier layer vis-à-vis the migration of alkali glass; the barrier layer is therefore under the layer consisting of crystallites of at least 25 nm, either directly or with the interposition of one or more other layers; the function of the barrier layer is to prevent the contamination of the upper layers by the sodium ions of the glass, when the glass is in particular conditions, especially at elevated temperature; it may consist of silica or silicon oxycarbide SiOC;
la couche de cristallites d'au moins 25 nm d'une part, d'au plus 10 nm d'autre part, est une couche d'oxyde transparente, électroconductrice ou non ; on peut citer comme exemples d'oxydes conducteurs transparents Sn02 :F, Sn02 :Sb, ZnO :AI, ZnO :Ga, InO :Sn, ZnO :ln, et comme exemples d'oxydes transparents non conducteurs Sn02, ZnO, InO ; l'oxyde transparent constituant ces couches peut être photocatalytique, tel que Ti02, c'est-à-dire avoir des propriétés d'amorceur d'oxydation radicalaire sous rayonnement solaire (propriétés de dégradation des hydrocarbures, autonettoyante). the layer of crystallites of at least 25 nm on the one hand, of at most 10 nm on the other hand, is a transparent oxide layer, electroconductive or not; examples of transparent conductive oxides Sn0 2 : F, SnO 2 : Sb, ZnO: Al, ZnO: Ga, InO: Sn, ZnO: 1n, and examples of non-conductive transparent oxides Sn0 2 , ZnO, InO; the transparent oxide constituting these layers can be photocatalytic, such as Ti0 2 , that is to say have properties of radical oxidizing initiator under solar radiation (hydrocarbon degradation properties, self-cleaning).
L'invention a également pour objet The invention also relates to
un procédé de fabrication d'un substrat verrier défini précédemment, dans lequel les couches constituées de cristallites d'au moins 25 nm, respectivement d'au plus 10 nm, sont formées par dépôt par voie chimique en phase vapeur à une température du substrat relativement élevée (notamment au moins égale à 500, de préférence 550 °C), respectivement relativement faible (notamment au moins égale à 300 °C et au plus égale à 550, de préférence 500 °C) ; a method of manufacturing a glass substrate defined above, in which the layers consisting of crystallites of at least 25 nm, respectively at most 10 nm, are formed by chemical vapor deposition at a temperature of the substrate relatively high (especially at least 500, preferably 550 ° C), respectively relatively low (in particular at least equal to 300 ° C and at most equal to 550, preferably 500 ° C);
- l'application d'un substrat verrier décrit ci-dessus dans une électrode de cellule photovoltaïque, dans laquelle la couche constituée de cristallites d'au plus 10 nm arrondit et/ou adoucit les irrégularités de surface à angles aigus et/ou en pointes de la couche constituée de cristallites d'au moins 25 nm,
mais sans nécessairement en diminuer la rugosité, et est recouverte de silicium amorphe ou microcristallin en tant qu'absorbant ; the application of a glass substrate described above in a photovoltaic cell electrode, in which the layer composed of crystallites of at most 10 nm rounds and / or softens the surface irregularities with acute angles and / or spikes the layer consisting of crystallites of at least 25 nm, but without necessarily reducing its roughness, and is coated with amorphous or microcrystalline silicon as an absorbent;
l'application d'un substrat verrier décrit ci-dessus dans une électrode de cellule photovoltaïque, dans laquelle la couche constituée de cristallites d'au plus 10 nm présente une surface plane (rugosité nulle), et est recouverte de CdTe en tant qu'absorbant ; la couche relativement conductrice telle que de Sn02 :F constituée de cristallites d'au moins 25 nm est alors recouverte de la couche de cristallites d'au plus 10 nm, nécessairement non conductrice (en anglais « buffer layer »), telle que de Sn02 , qui est avantageusement plane et lisse car CdTe, absorbant de relativement grandes quantités de lumière, ne requiert pas de diffusion lumineuse (light trapping) par les couches sous- jacentes ; et applying a glass substrate described above in a photovoltaic cell electrode, wherein the crystallite layer of at most 10 nm has a flat surface (zero roughness), and is coated with CdTe as absorbent; the relatively conductive layer such as Sn0 2 : F consisting of crystallites of at least 25 nm is then covered with the layer of crystallites of at most 10 nm, necessarily non-conductive (in English "buffer layer"), such as Sn0 2 , which is advantageously flat and smooth because CdTe, absorbing relatively large amounts of light, does not require light trapping by the underlying layers; and
l'application d'un substrat verrier décrit ci-dessus comme vitrage bas-émissif dans le bâtiment ou pour un véhicule de transport, dans l'électroménager comme porte de four ou structure à couche chauffante, ou bien en contrôle solaire sur la face de vitrages en contact avec l'atmosphère extérieure, dont la surface à rugosité diminuée voire nulle, et/ou à aspérités arrondies et/ou adoucies en facilite le nettoyage ; citons comme couche de contrôle solaire Sn02 :Sb. the application of a glass substrate described above as low-emission glazing in the building or for a transport vehicle, in household appliances such as oven door or heating layer structure, or in solar control on the face of glazing in contact with the external atmosphere, whose surface with reduced roughness or even zero, and / or rounded and / or softened asperities facilitates cleaning; let us mention as a solar control layer Sn0 2 : Sb.
L'invention est maintenant illustrée par l'exemple de réalisation suivant. The invention is now illustrated by the following embodiment.
EXEMPLE EXAMPLE
On effectue successivement deux dépôts par voie chimique en phase vapeur sur un substrat de 1 m de largeur. Two chemical vapor phase depositions are successively carried out on a substrate 1 m wide.
Le substrat consiste en verre sodocalcique flotté de 4 mm d'épaisseur commercialisé sous la marque enregistrée Planilux® par la société Saint-Gobain Glass France, muni d'une couche SiOC de 25 nm constituant une barrière vis-à-vis de la migration des alcalins du verre. The substrate consists of 4 mm thick float soda-lime glass sold under the registered trade name Planilux® by Saint-Gobain Glass France, provided with a 25 nm SiOC layer constituting a barrier against the migration of alkaline glass.
Le premier dépôt est effectué dans les conditions suivantes : The first deposit is made under the following conditions:
Température du substrat : 600°C, Substrate temperature: 600 ° C,
Vitesse de défilement du substrat (direction perpendiculaire à la largeur) : 12 m/min, Substrate running speed (direction perpendicular to the width): 12 m / min,
Débit de trichlorure de monobutylétain (MBTCL) : 30 kg/h,
Débit d'eau : 7,5 kg/h, Flow rate of monobutyltin trichloride (MBTCL): 30 kg / h, Water flow rate: 7.5 kg / h,
Débit d'air (80% azote, 20% oxygène en volume) total : 1 195 l/min. Air flow (80% nitrogen, 20% oxygen by volume) total: 1,195 l / min.
On obtient une couche de 400 nm d'épaisseur constituée de cristallites de Sn02 d'au moins 25-30 nm. Le flou du substrat revêtu est de 17 %. A 400 nm thick layer consisting of Sn0 2 crystallites of at least 25-30 nm is obtained. The blur of the coated substrate is 17%.
Le second dépôt est effectué dans les conditions suivantes : The second deposit is made under the following conditions:
Température du substrat : 450°C, Substrate temperature: 450 ° C,
Vitesse de défilement du substrat : 8 m/min, Substrate speed: 8 m / min,
Autres conditions identiques à celles du premier dépôt. Other conditions identical to those of the first deposit.
On obtient une seconde couche de 150 nm d'épaisseur constituée de cristallites de Sn02 d'environ 6 nm. Le flou du substrat revêtu des couches des premier et second dépôts est de 17,1 %. A second 150 nm thick layer consisting of Sn0 2 crystallites of about 6 nm is obtained. The blur of the substrate coated with the layers of the first and second deposits is 17.1%.
La couche du second dépôt a maintenu les propriétés du substrat avant qu'elle ait été déposée. La seule modification a été le lissage de la surface facilitant son nettoyage ; on constate qu'un moyen de nettoyage de type chiffon n'est plus accroché par les aspérités à angles aigus de la surface, qui ont été plus ou moins recouvertes et/ou arrondies.
The layer of the second deposit maintained the properties of the substrate before it was deposited. The only modification was the smoothing of the surface facilitating its cleaning; it is found that a cloth-type cleaning means is no longer hooked by the asperities with sharp corners of the surface, which have been more or less covered and / or rounded.
Claims
REVENDICATIONS
Substrat verrier, caractérisé en ce qu'il est muni d'une couche d'oxyde transparente constituée de cristallites d'au moins 25 nm, recouverte directement d'une couche d'oxyde transparente constituée de cristallites d'au plus 10 nm.Glass substrate, characterized in that it is provided with a transparent oxide layer consisting of crystallites of at least 25 nm, directly covered with a transparent oxide layer consisting of crystallites of at most 10 nm.
Substrat verrier selon la revendication 1 , caractérisé en ce que l'épaisseur de la couche de cristallites d'au plus 10 nm est au plus égale à 350 nm. Glass substrate according to claim 1, characterized in that the thickness of the crystallite layer of at most 10 nm is at most equal to 350 nm.
Substrat verrier selon l'une des revendications précédentes, caractérisé en ce que l'épaisseur de la couche de cristallites d'au plus 10 nm est au plus égale à 250 nm. Glass substrate according to one of the preceding claims, characterized in that the thickness of the crystallite layer of at most 10 nm is at most equal to 250 nm.
Substrat verrier selon l'une des revendications précédentes, caractérisé en ce qu'il est recouvert directement d'une couche barrière vis-à-vis de la migration des alcalins du verre. Glass substrate according to one of the preceding claims, characterized in that it is covered directly with a barrier layer vis-à-vis the migration of alkali glass.
Substrat verrier selon l'une des revendications précédentes, caractérisé en ce que la couche de cristallites d'au moins 25 nm d'une part, d'au plus 10 nm d'autre part, est électroconductrice et choisie parmi Sn02 :F, Sn02 :Sb, ZnO :AI, ZnO :Ga, InO :Sn, ZnO :ln, ou non électroconductrice et choisie parmi Sn02, ZnO, InO, ou encore photocatalytique et constituée de Ti02. Glass substrate according to one of the preceding claims, characterized in that the layer of crystallites of at least 25 nm on the one hand, of at most 10 nm on the other hand, is electroconductive and selected from Sn0 2 : F, Sn0 2 : Sb, ZnO: Al, ZnO: Ga, InO: Sn, ZnO: In, or non-electroconductive and selected from Sn0 2 , ZnO, InO, or photocatalytic and consisting of Ti0 2 .
Procédé de fabrication d'un substrat verrier selon l'une des revendications précédentes, caractérisé en ce que lesdites couches constituées de cristallites d'au moins 25 nm, respectivement d'au plus 10 nm, sont formées par dépôt par voie chimique en phase vapeur à une température du substrat relativement élevée, respectivement relativement faible. A method of manufacturing a glass substrate according to one of the preceding claims, characterized in that said layers consisting of crystallites of at least 25 nm, respectively at most 10 nm, are formed by chemical vapor deposition at a relatively high substrate temperature, respectively relatively low.
Procédé selon la revendication 6, caractérisé en ce que la température du substrat relativement élevée est au moins égale à 500, de préférence 550 °C. Process according to Claim 6, characterized in that the relatively high substrate temperature is at least 500, preferably 550 ° C.
Procédé selon l'une des revendications 6 ou 7, caractérisé en ce que la température du substrat relativement faible est au moins égale à 300 °C, et au plus égale à 550, de préférence 500 °C. Process according to one of Claims 6 or 7, characterized in that the temperature of the relatively weak substrate is at least 300 ° C and at most 550, preferably 500 ° C.
Application d'un substrat verrier selon l'une des revendications 1 à 5 dans une électrode de cellule photovoltaïque, dans laquelle la couche constituée de cristallites d'au plus 10 nm arrondit et/ou adoucit les irrégularités de surface à angles aigus et/ou en pointes de la couche constituée de cristallites d'au moins
25 nm, et est recouverte de silicium amorphe ou microcristallin en tant qu'absorbant. Application of a glass substrate according to one of claims 1 to 5 in a photovoltaic cell electrode, wherein the crystallite layer of at most 10 nm rounds and / or softens the acute angle surface irregularities and / or in points of the layer consisting of crystallites of at least 25 nm, and is coated with amorphous or microcrystalline silicon as an absorbent.
Application d'un substrat verrier selon l'une des revendications 1 à 5 dans une électrode de cellule photovoltaïque, dans laquelle la couche constituée de cristallites d'au plus 10 nm présente une surface plane, et est recouverte de CdTe en tant qu'absorbant. Application of a glass substrate according to one of Claims 1 to 5 in a photovoltaic cell electrode, in which the layer consisting of crystallites of at most 10 nm has a flat surface and is coated with CdTe as an absorbent .
Application d'un substrat verrier selon l'une des revendications 1 à 5 comme vitrage bas-émissif dans le bâtiment ou pour un véhicule de transport, dans l'électroménager comme porte de four ou structure à couche chauffante, ou bien en contrôle solaire sur la face de vitrages en contact avec l'atmosphère extérieure.
Application of a glass substrate according to one of claims 1 to 5 as low-emissive glazing in the building or for a transport vehicle, in the household appliance as oven door or heating layer structure, or in solar control on the glazing face in contact with the outside atmosphere.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1152873A FR2973366A1 (en) | 2011-04-04 | 2011-04-04 | LOW RUGGED LAYER VERRIER SUBSTRATE |
PCT/FR2012/050690 WO2012136919A1 (en) | 2011-04-04 | 2012-03-30 | Glass substrate with slightly rough layer |
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EP2694448A1 true EP2694448A1 (en) | 2014-02-12 |
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EP12718284.8A Withdrawn EP2694448A1 (en) | 2011-04-04 | 2012-03-30 | Glass substrate with slightly rough layer |
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US (1) | US20140116412A1 (en) |
EP (1) | EP2694448A1 (en) |
JP (1) | JP5992993B2 (en) |
KR (1) | KR20140009431A (en) |
CN (1) | CN103459344B (en) |
BR (1) | BR112013023979A2 (en) |
EA (1) | EA025612B1 (en) |
FR (1) | FR2973366A1 (en) |
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CN105408270B (en) * | 2013-03-08 | 2018-10-09 | 康宁公司 | Hierarchical-transparent conductive oxide film |
Citations (1)
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US5900275A (en) * | 1992-07-15 | 1999-05-04 | Donnelly Corporation | Method for reducing haze in tin oxide transparent conductive coatings |
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FR2738813B1 (en) * | 1995-09-15 | 1997-10-17 | Saint Gobain Vitrage | SUBSTRATE WITH PHOTO-CATALYTIC COATING |
US6596398B1 (en) * | 1998-08-21 | 2003-07-22 | Atofina Chemicals, Inc. | Solar control coated glass |
JP2001002449A (en) * | 1999-04-22 | 2001-01-09 | Nippon Sheet Glass Co Ltd | Low-emissivity glass and glass article using the same |
US6171646B1 (en) * | 1999-12-09 | 2001-01-09 | Engineered Glass Products, Llc | Method for making an abrasion and scratch resistant coated glass article |
FR2838735B1 (en) * | 2002-04-17 | 2005-04-15 | Saint Gobain | SELF-CLEANING COATING SUBSTRATE |
CN102311236B (en) * | 2003-12-26 | 2015-02-04 | 积水化学工业株式会社 | Intermediate film for laminated glass and laminated glass |
FR2944148B1 (en) * | 2009-04-02 | 2012-03-02 | Saint Gobain | METHOD FOR MANUFACTURING TEXTURED SURFACE STRUCTURE FOR ORGANIC ELECTROLUMINESCENT DIODE DEVICE AND TEXTURED SURFACE STRUCTURE OBTAINED BY THIS METHOD |
-
2011
- 2011-04-04 FR FR1152873A patent/FR2973366A1/en active Pending
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2012
- 2012-03-30 CN CN201280017180.3A patent/CN103459344B/en not_active Expired - Fee Related
- 2012-03-30 BR BR112013023979A patent/BR112013023979A2/en not_active IP Right Cessation
- 2012-03-30 EA EA201391462A patent/EA025612B1/en not_active IP Right Cessation
- 2012-03-30 EP EP12718284.8A patent/EP2694448A1/en not_active Withdrawn
- 2012-03-30 KR KR1020137025730A patent/KR20140009431A/en not_active Application Discontinuation
- 2012-03-30 US US14/009,712 patent/US20140116412A1/en not_active Abandoned
- 2012-03-30 WO PCT/FR2012/050690 patent/WO2012136919A1/en active Application Filing
- 2012-03-30 JP JP2014503191A patent/JP5992993B2/en not_active Expired - Fee Related
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US5900275A (en) * | 1992-07-15 | 1999-05-04 | Donnelly Corporation | Method for reducing haze in tin oxide transparent conductive coatings |
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THANGARAJU B ED - AOUADI SAMIR BROITMAN ESTEBAN FIGUEROA CARLOS FRANZ ROBERT VEPREK STAN STÜBER MICHAEL: "Structural and electrical studies on highly conducting spray deposited fluorine and antimony doped SnO2 thin films from SnCl2 precursor", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 402, no. 1-2, 1 January 2002 (2002-01-01), pages 71 - 78, XP004329936, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(01)01667-4 * |
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YADAV A A ET AL: "Electrical, structural and optical properties of SnO2:F thin films: Effect of the substrate temperature", JOURNAL OF ALLOYS AND COMPOUNDS, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 488, no. 1, 20 November 2009 (2009-11-20), pages 350 - 355, XP026783646, ISSN: 0925-8388, [retrieved on 20090901], DOI: 10.1016/J.JALLCOM.2009.08.130 * |
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JP5992993B2 (en) | 2016-09-14 |
US20140116412A1 (en) | 2014-05-01 |
EA201391462A1 (en) | 2014-02-28 |
WO2012136919A1 (en) | 2012-10-11 |
EA025612B1 (en) | 2017-01-30 |
JP2014511817A (en) | 2014-05-19 |
CN103459344B (en) | 2017-03-01 |
MX347045B (en) | 2017-04-10 |
MX2013011446A (en) | 2013-10-17 |
FR2973366A1 (en) | 2012-10-05 |
BR112013023979A2 (en) | 2016-12-13 |
CN103459344A (en) | 2013-12-18 |
KR20140009431A (en) | 2014-01-22 |
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