EP2689490B1 - Bauteil eines nanoelektromechanischen hochfrequenzsystem (rf nems) mit einem nanoschalter mit verbessertem kontakt - Google Patents

Bauteil eines nanoelektromechanischen hochfrequenzsystem (rf nems) mit einem nanoschalter mit verbessertem kontakt Download PDF

Info

Publication number
EP2689490B1
EP2689490B1 EP12709631.1A EP12709631A EP2689490B1 EP 2689490 B1 EP2689490 B1 EP 2689490B1 EP 12709631 A EP12709631 A EP 12709631A EP 2689490 B1 EP2689490 B1 EP 2689490B1
Authority
EP
European Patent Office
Prior art keywords
line
nanotubes
series
component
nanoswitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP12709631.1A
Other languages
English (en)
French (fr)
Other versions
EP2689490A1 (de
Inventor
Afshin Ziaei
Matthieu Le Baillif
Stéphane Xavier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Publication of EP2689490A1 publication Critical patent/EP2689490A1/de
Application granted granted Critical
Publication of EP2689490B1 publication Critical patent/EP2689490B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/003—Coplanar lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H2300/00—Orthogonal indexing scheme relating to electric switches, relays, selectors or emergency protective devices covered by H01H
    • H01H2300/036—Application nanoparticles, e.g. nanotubes, integrated in switch components, e.g. contacts, the switch itself being clearly of a different scale, e.g. greater than nanoscale

Definitions

  • the field of the invention is that of NEMS RF type components which are generally components developed from waveguide technologies for microelectronics, which may be in particular be coplanar lines as shown in FIG. figure 1 , or "microstrip" lines consisting of a transmission track of controlled width, separated from a conductive ground plane by a low loss insulating material as shown in FIG. figure 2 , the electric field lines and the magnetic field lines being represented on all of these figures.
  • nano-switches commonly called in English term "nano-switch"
  • it is generally necessary to make contacts involving elements of which at least one of the dimensions is of nanoscale, typically two nanotubes.
  • the reliability of such contact is reduced and its average quality very low.
  • the ideal case of two nanotubes being in contact along a stop in a continuous manner is very improbable. This in fact reduces the potential of these "nano-switches”.
  • the present invention relates to a component comprising a new micro-switch architecture in which the carbon nanotube comes into direct contact with a metal line, or with a dielectric covering the latter.
  • the lateral element of said RF line is covered with a first dielectric layer so as to provide an ohmic contact at the nano-switch.
  • said first layer dielectric is covered with a metal layer constituting a floating electrode, so as to constitute an integrated capacitance.
  • said first dielectric layer is covered with a metal layer constituting a floating electrode and said metal layer is further covered with a second dielectric layer, making it possible to provide a capacitive contact between the series of nanotubes or nanowires and integrated capacity.
  • the component of the present invention comprises a coplanar RF line capable of being connected to one or more ground planes via one or more nano-switches.
  • the new architecture proposed in the present invention comprises a nano-switch comprising at least one series of nanotubes which may advantageously be nanotubes belonging to the ground plane and able to switch and thus be brought into direct contact with the RF coplanar line.
  • the nanotubes may advantageously be carbon nanotubes of the MWCNT type, which are interesting for their metallic properties.
  • carbon nanotubes are very thin tubular structures formed by one or more layers of graphite wound on themselves.
  • the carbon nanotubes can be produced at high temperature higher than 1000 ° C by the application of an electric discharge between two graphite electrodes or at medium temperature below 1000 ° C by PECVD (Plasma Enhanced Chemical Vapor Deposition).
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • carbon nanotubes are classified in two categories: single-walled nanotubes, or SWCNTs, composed of a tubular structure formed of a graphite sheet wound on itself, and which differ from the multi-walled nanotubes or MWCNT, which can be considered as consisting of several concentric SWCNT nanotubes.
  • the component conventionally comprises a coplanar line RF, Ls, formed on the surface of a substrate S and capable of being connected to two ground planes M 1 and M 2 via nano-switches NC 1 , NC 2 , NC 3 and NC 4 as shown in figure 3a .
  • Each nano-switch comprises said lateral arms of ground planes (for example arms M b11 and M b12 belonging to the ground plane M 1 ), a lateral arm called line (for example the arm Ls b1 ) belonging to the line coplanar RF and control electrodes (E 11 , E 12 ).
  • the ground plane side arms have on the surface series of nanotubes capable of switching in a position to ensure the electrical connection between the ground plane and the RF coplanar line, the nanotubes coming into direct contact with the arms so-called RF line.
  • the figure 3b illustrates a sectional view of the nano-switch NC 1 highlighting the electrical contact that can be provided between the nanotubes Nb 11i belonging to the series of nanotubes on the surface of the ground plane arm M b11 and the coplanar line arm Ls b1 .
  • the figure 3c is an enlarged top view of the nano-switch NC 1 illustrating the two lateral arms of the two ground planes, M b11 and M b12 being able to be brought into contact with the arm Ls b1 via two series of nanotubes Nb 11i and Nb 12i and two control electrodes E 11 and E 12 .
  • the Figures 4a and 4b illustrate in more detail the control method of said nano-switch NC 1 and shunt behavior.
  • the series of nanotubes Nb 11i is not activated to come into contact with the arm Ls b1 .
  • the nanotubes are naturally polarized. It is therefore not necessary to provide an additional bias circuit to be able to operate.
  • the signal fulfills the role of 0.5V polarization
  • the component of the present invention may also allow assured capacitive contact between the ground planes and the coplanar line.
  • An additional layer of DL Sb1 dielectric material is then provided on the surface of the whole of the L Sb1 arm of the coplanar line, the series of nanotubes Nb 11i being able to switch in contact with this DL Sb1 layer as illustrated in FIG. figure 5 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Semiconductor Integrated Circuits (AREA)

Claims (4)

  1. RF-Komponente, die wenigstens eine RF-Leitung (Ls) koplanar mit einer Metallfläche (M1, M2) auf der Fläche eines Substrats (S) und eine Nanoschalterstruktur (NC1, NC2, NC3, NC4) umfasst, die sich zwischen der koplanaren Leitung und der Metallfläche befindet, wobei die RF-Leitung und die Metallfläche parallel zueinander in einer ersten Richtung sind, wobei die RF-Leitung und die Metallfläche seitliche Elemente (Lsb1, Lsb2, Mb11, Mb12, Mb21, Mb22) senkrecht zu der ersten Richtung umfassen, dadurch gekennzeichnet, dass:
    ein seitliches Element (Lsb1, Lsb2) der RF-Leitung mit wenigstens einem seitlichen Element der Metallfläche (Mb11, Mb12, Mb21, Mb22) zusammenwirkt, die eine Serie von Nanoröhrchen oder Nanodrähten (Nb11i, Nb12i) umfasst, über eine Schaltung, die die Serie von Nanoröhrchen oder Nanodrähten in direkten Kontakt mit dem seitlichen Element der RF-Leitung bringt;
    wobei die Nanoschalterstruktur ferner wenigstens eine Schaltelektrode auf der Oberfläche des Substrats umfasst, so dass die Serie von Nanoröhrchen oder Nanodrähten mit dem seitlichen Element der RF-Leitung in Kontakt kommen kann.
  2. RF-Komponente nach Anspruch 1, dadurch gekennzeichnet, dass das seitliche Element der RF-Leitung mit einer ersten dielektrischen Schicht beschichtet ist, um einen ohmschen Kontakt am Nanoschalter zu erzielen.
  3. RF-Komponente nach Anspruch 2, dadurch gekennzeichnet, dass die erste dielektrische Schicht mit einer Metallschicht (MF11) beschichtet ist, die eine schwebende Elektrode bildet, um einen integrierten Kondensator zu bilden.
  4. RF-Komponente nach Anspruch 1, dadurch gekennzeichnet, dass die erste dielektrische Schicht mit einer Metallschicht (MF11) beschichtet ist, und dadurch, dass die Metallschicht auch mit einer zweiten dielektrischen Schicht (DL2Sb1) zum Erzeugen eines kapazitiven Kontakts zwischen der Serie von Nanoröhrchen oder Nanodrähten und dem Kondensator beschichtet ist, um einen kapazitiven Kontakt zwischen dem integrierten Kondensator und der Serie von Nanoröhrchen zu erzielen.
EP12709631.1A 2011-03-21 2012-03-19 Bauteil eines nanoelektromechanischen hochfrequenzsystem (rf nems) mit einem nanoschalter mit verbessertem kontakt Active EP2689490B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1100838A FR2973167B1 (fr) 2011-03-21 2011-03-21 Composant de type nano-electro-mechanical-system radio-frequence(nems rf) comportant un nano-commutateur a contact ameliore
PCT/EP2012/054759 WO2012126871A1 (fr) 2011-03-21 2012-03-19 Composant de type nano-electro-mechanical-system radio-frequence (nems rf) comportant un nano-commutateur a contact ameliore

Publications (2)

Publication Number Publication Date
EP2689490A1 EP2689490A1 (de) 2014-01-29
EP2689490B1 true EP2689490B1 (de) 2014-12-31

Family

ID=45855792

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12709631.1A Active EP2689490B1 (de) 2011-03-21 2012-03-19 Bauteil eines nanoelektromechanischen hochfrequenzsystem (rf nems) mit einem nanoschalter mit verbessertem kontakt

Country Status (3)

Country Link
EP (1) EP2689490B1 (de)
FR (1) FR2973167B1 (de)
WO (1) WO2012126871A1 (de)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129447A1 (en) * 2002-08-07 2004-07-08 Pieder Beeli Electrical and electro-mechanical applications of superconducting phenomena in carbon nanotubes
US7898481B2 (en) * 2008-01-08 2011-03-01 Motorola Mobility, Inc. Radio frequency system component with configurable anisotropic element

Also Published As

Publication number Publication date
FR2973167B1 (fr) 2013-04-19
WO2012126871A1 (fr) 2012-09-27
FR2973167A1 (fr) 2012-09-28
EP2689490A1 (de) 2014-01-29

Similar Documents

Publication Publication Date Title
EP3032598B1 (de) Kondensator mit variabler kapazität, der eine materialschicht mit zustandsveränderung umfasst, und verfahren zur variation der kapazität eines kondensators
EP0572298B1 (de) Halleffekt-Fühler
CN101208617A (zh) 高性能CdxZn1－xTe X射线和γ射线辐射检测器及其制造方法
EP3787050B1 (de) Nicht-flüchtige speichervorrichtung vom typ filament
EP3465724B1 (de) Mems-membran mit integrierter übertragungsleitung
FR2894386A1 (fr) Transistor de type i-mos comportant deux grilles independantes, et procede d'utilisation d'un tel transistor
EP2680287A1 (de) Anordnung für Superkondensatorvorrichtung, Superkondensatorvorrichtung, die eine solche Anordnung umfasst, und Herstellungsverfahren einer solchen Anordnung
EP1826797A2 (de) Kathodenstruktur mit Nanoröhren für Bildschirm
EP2689490B1 (de) Bauteil eines nanoelektromechanischen hochfrequenzsystem (rf nems) mit einem nanoschalter mit verbessertem kontakt
EP0169122B1 (de) Mittels Gleichspannung steuerbares Element mit variabler Kapazität
EP3816617A2 (de) Gas sensor mit beheiztem sensorschicht
FR2901781A1 (fr) Structure de micro-commutateurs radiofrequence ou hyperfrequence et procede de fabrication d'une telle structure
EP1717830A1 (de) Elektromechanischer Micro-Kondensator mit variabler Kapazität und Verfahren zur Herstellung eines solchen Kondensators
EP3819951B1 (de) Elektromechanische vorrichtung auf der basis ferroelektrischer polymere, und verfahren zur herstellung einer solchen vorrichtung
FR2550889A1 (fr) Dispositif amplificateur a effet de champ, fonctionnant dans les hyperfrequences, par transfert d'electrons
EP2337042B1 (de) RF-Bauteil mit einem Schalter basierend auf Kohlenstoff-Nanoröhren
EP2251919A2 (de) Organischer Feldeffekttransistor
FR2702869A1 (fr) Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
FR2941089A1 (fr) Transistor a source et drain filaires
EP3237324B1 (de) Kapazitives rf-mems für hochleistungsanwendungen
FR3073079A1 (fr) Procede de fabrication d'un composant electronique a doubles boites quantiques
EP3624202A1 (de) Bidirektionaler transistor mit heterostruktur und geringem durchlasswiderstand
EP1953778A1 (de) Kondensator in einem Festkörperschaltkreis
EP3542401A1 (de) Elektronisches bauteil mit einem heteroübergang mit hoher elektronenmobilität
WO2023148196A1 (fr) Transistor non-volatil à effet de champ à base de gaz bidimensionnel d'électrons

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130912

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20140730

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: FRENCH

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 704865

Country of ref document: AT

Kind code of ref document: T

Effective date: 20150215

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602012004663

Country of ref document: DE

Effective date: 20150226

REG Reference to a national code

Ref country code: NL

Ref legal event code: T3

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20150331

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20150401

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 704865

Country of ref document: AT

Kind code of ref document: T

Effective date: 20141231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20150430

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602012004663

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: LU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20150319

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20151001

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20150331

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20150331

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20150319

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 5

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20160319

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20160319

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20120319

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20150501

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 7

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20141231

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20230221

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20230227

Year of fee payment: 12

Ref country code: IT

Payment date: 20230228

Year of fee payment: 12

Ref country code: BE

Payment date: 20230216

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20240226

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240213

Year of fee payment: 13