EP2592521A3 - Procédés et circuits pour la fourniture de références stables de tension et de courant basées sur des courants s'écoulant à travers des composants de couche diélectrique ultra-mince - Google Patents
Procédés et circuits pour la fourniture de références stables de tension et de courant basées sur des courants s'écoulant à travers des composants de couche diélectrique ultra-mince Download PDFInfo
- Publication number
- EP2592521A3 EP2592521A3 EP12007509.8A EP12007509A EP2592521A3 EP 2592521 A3 EP2592521 A3 EP 2592521A3 EP 12007509 A EP12007509 A EP 12007509A EP 2592521 A3 EP2592521 A3 EP 2592521A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- dielectric layer
- current
- ultra
- voltage
- thin dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161555309P | 2011-11-03 | 2011-11-03 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2592521A2 EP2592521A2 (fr) | 2013-05-15 |
EP2592521A3 true EP2592521A3 (fr) | 2013-11-20 |
EP2592521B1 EP2592521B1 (fr) | 2021-03-10 |
Family
ID=47627876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12007509.8A Active EP2592521B1 (fr) | 2011-11-03 | 2012-11-05 | Procédés et circuits pour la fourniture de références stables de tension et de courant basées sur des courants s'écoulant à travers des composants de couche diélectrique ultra-mince |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2592521B1 (fr) |
CN (1) | CN103149964B (fr) |
TW (1) | TWI570536B (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103631311A (zh) * | 2013-11-28 | 2014-03-12 | 苏州贝克微电子有限公司 | 一种稳压器 |
JP6805049B2 (ja) * | 2017-03-31 | 2020-12-23 | エイブリック株式会社 | 基準電圧発生装置 |
US11469223B2 (en) * | 2019-05-31 | 2022-10-11 | Analog Devices International Unlimited Company | High precision switched capacitor MOSFET current measurement technique |
US10845839B1 (en) * | 2019-09-13 | 2020-11-24 | Analog Devices, Inc. | Current mirror arrangements with double-base current circulators |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5883798A (en) * | 1996-09-30 | 1999-03-16 | Nec Corporation | Voltage/current conversion circuit |
US20020005749A1 (en) * | 2000-06-13 | 2002-01-17 | Arthur Descombes | Method for generating a substantially temperature independent current and device allowing implementation of the same |
US6917319B1 (en) * | 2004-03-30 | 2005-07-12 | International Business Machines Corporation | Digital to analog converter using tunneling current element |
US20080169837A1 (en) * | 2007-01-15 | 2008-07-17 | International Business Machines Corporation | Current Control Mechanism For Dynamic Logic Keeper Circuits In An Integrated Circuit And Method Of Regulating Same |
US20080169869A1 (en) * | 2007-01-15 | 2008-07-17 | International Business Machines Corporation | Voltage Reference Circuit For Low Voltage Applications In An Integrated Circuit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265749B1 (en) * | 1997-10-14 | 2001-07-24 | Advanced Micro Devices, Inc. | Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant |
EP1014547A3 (fr) * | 1998-12-21 | 2000-11-15 | Fairchild Semiconductor Corporation | Système de pompe de charge à courant bas |
TW530422B (en) * | 2001-10-31 | 2003-05-01 | Univ Nat Taiwan | MOS tunneling diode temperature sensor and the manufacturing method thereof |
JP2005057256A (ja) * | 2003-08-04 | 2005-03-03 | Samsung Electronics Co Ltd | 漏洩電流を利用した半導体検査装置および漏洩電流補償システム |
KR100910861B1 (ko) * | 2007-11-08 | 2009-08-06 | 주식회사 하이닉스반도체 | 밴드갭 레퍼런스 발생회로 |
US8149047B2 (en) * | 2008-03-20 | 2012-04-03 | Mediatek Inc. | Bandgap reference circuit with low operating voltage |
TWI501067B (zh) * | 2010-08-18 | 2015-09-21 | Novatek Microelectronics Corp | 能帶隙參考電路及能帶隙參考電流源 |
-
2012
- 2012-11-02 TW TW101140823A patent/TWI570536B/zh active
- 2012-11-05 CN CN201210436580.XA patent/CN103149964B/zh active Active
- 2012-11-05 EP EP12007509.8A patent/EP2592521B1/fr active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5883798A (en) * | 1996-09-30 | 1999-03-16 | Nec Corporation | Voltage/current conversion circuit |
US20020005749A1 (en) * | 2000-06-13 | 2002-01-17 | Arthur Descombes | Method for generating a substantially temperature independent current and device allowing implementation of the same |
US6917319B1 (en) * | 2004-03-30 | 2005-07-12 | International Business Machines Corporation | Digital to analog converter using tunneling current element |
US20080169837A1 (en) * | 2007-01-15 | 2008-07-17 | International Business Machines Corporation | Current Control Mechanism For Dynamic Logic Keeper Circuits In An Integrated Circuit And Method Of Regulating Same |
US20080169869A1 (en) * | 2007-01-15 | 2008-07-17 | International Business Machines Corporation | Voltage Reference Circuit For Low Voltage Applications In An Integrated Circuit |
Also Published As
Publication number | Publication date |
---|---|
EP2592521B1 (fr) | 2021-03-10 |
CN103149964B (zh) | 2016-10-26 |
CN103149964A (zh) | 2013-06-12 |
EP2592521A2 (fr) | 2013-05-15 |
TWI570536B (zh) | 2017-02-11 |
TW201324072A (zh) | 2013-06-16 |
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