EP2530745A1 - Light emitting device and light emitting device package - Google Patents
Light emitting device and light emitting device package Download PDFInfo
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- EP2530745A1 EP2530745A1 EP20120160198 EP12160198A EP2530745A1 EP 2530745 A1 EP2530745 A1 EP 2530745A1 EP 20120160198 EP20120160198 EP 20120160198 EP 12160198 A EP12160198 A EP 12160198A EP 2530745 A1 EP2530745 A1 EP 2530745A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Abstract
Description
- This application claims priority to Korean Patent Application No.
10-2011-0053181 - Embodiments relate to a light emitting device and light emitting device package.
- Generally, a light emitting diode (hereinafter, referred to as an 'LED') is a semiconductor device that converts an electrical signal into infrared light, visible light or other forms of light using recombination between electrons and holes, which is one of the properties of a compound semiconductor, to transmit and receive the signal.
- Generally, the LED is used in electric home appliances, a remote controller, an electric bulletin board, an indicator, various kinds of automated equipment, optical communication, etc. The LED may be classified as an infrared emitting diode (IRED) or a visible light emitting diode (VLED).
- A frequency (or wavelength) of light emitted from the LED is a function to a band gap of a semiconductor material. If a semiconductor material having a narrow band gap is used, photons having low energy and a long wavelength are generated. On the other hand, if a semiconductor material having a wide band gap is used, photons having a short wavelength are generated. Consequently, a semiconductor material for a device is selected based on kinds of light to be emitted.
- Embodiments provide a light emitting device and light emitting device package with improved reflectance and optical extraction efficiency.
- In one embodiment, a light emitting device includes a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, a tunnel junction layer comprising a second conductive type nitride semiconductor layer and a first conductive type nitride semiconductor layer disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned, a first electrode disposed on the first conductive type semiconductor layer, and a second electrode disposed on the first conductive type nitride semiconductor layer, wherein a portion of the second electrode is in schottky contact with the second conductive type nitride semiconductor layer through the first conductive type nitride semiconductor layer.
- The second electrode may include a first contact part which is in ohmic contact with an upper surface of the first conductive type nitride semiconductor layer and a through portion of the first conductive type nitride semiconductor layer and a second contact part being in schottky contact with the second conductive type nitride semiconductor layer.
- A portion of the second conductive type nitride semiconductor layer may be positioned between the second contact part and the active layer.
- The tunnel junction layer may have at least one recess through which the second conductive type nitride semiconductor layer is exposed, and the second electrode may be disposed at the upper surface and lateral surface of the at least one recess.
- A portion of the second electrode may be in schottky contact with the second conductive type nitride semiconductor layer exposed through the at least one recess.
- A portion of the second electrode may be in ohmic contact with the first conductive type nitride semiconductor layer exposed through the at least one recess.
- The second contact part and the second electrode may overlap in the vertical direction. The first conductive type nitride semiconductor layer may include a plurality of first conductive type clad layers having different concentrations and/or compositions of a first dopant. The second conductive type nitride semiconductor layer may include a plurality of second conductive type clad layers having different concentrations and/or compositions of a second dopant.
- The active layer may emit light having a wavelength of 250 nm to 340 nm. The first electrode and the second electrode may be reflective electrodes comprising Al, Al/Ti or an Al alloy.
- In another embodiment, a light emitting device includes a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, a tunnel junction layer comprising a second conductive type nitride semiconductor layer and a first conductive type nitride semiconductor layer disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned, a first electrode disposed on the first conductive type semiconductor layer, at least one recess formed in the tunnel junction layer and exposing the second conductive type nitride semiconductor layer through the at least one recess, a light transmitting dielectric layer filled in the at least one recess, and a second electrode disposed on the light transmitting dielectric layer and the first conductive type nitride semiconductor layer.
- The light transmitting dielectric layer may overlap with the second electrode in the vertical direction. The first conductive type nitride semiconductor layer may include a plurality of first conductive type clad layers having different concentrations and/or compositions of a first dopant. The second conductive type nitride semiconductor layer may include a plurality of second conductive type clad layers having different concentrations and/or compositions of a second dopant.
- In a further embodiment, a light emitting device package includes a submount, a first metal layer and a second metal layer disposed on the submount, a light emitting device disposed on the submount, a first bump unit to electrically interconnect the light emitting device and the first metal layer, and a second bump unit to electrically interconnect the light emitting device and the second metal layer, wherein the light emitting device is one of the light emitting device according to the embodiments.
- Arrangements and embodiments may be described in detail with reference to the following drawings in which like reference numerals refer to like elements and wherein:
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FIG. 1 is a sectional view showing a light emitting device according to a first embodiment; -
FIG. 2 is a sectional view showing a light emitting device according to a second embodiment; -
FIG. 3 is a sectional view showing a light emitting device according to a third embodiment; -
FIG. 4 is a sectional view showing a light emitting device according to a fourth embodiment; -
FIG. 5 is a view showing reflectance of aluminum, gold and silver based on wavelengths of light; -
FIG. 6 is a sectional view showing a light emitting device according to a fifth embodiment; -
FIG. 7 is a sectional view showing a light emitting device according to a sixth embodiment; -
FIG. 8 is a sectional view showing a light emitting device package according to an embodiment; -
FIG. 9 is a view showing a general deep ultraviolet (DUV) light emitting device for flip chips; -
FIG. 10 is an exploded perspective view showing an illumination apparatus according to an embodiment; -
FIG. 11A is a view showing a display apparatus including a light emitting device package according to an embodiment; and -
FIG. 11B is a sectional view showing a light source of the display apparatus shown inFIG. 11A . - Hereinafter, embodiments will be described with reference to the annexed drawings. It will be understood that when an element is referred to as being 'on' or 'under' another element, it can be directly on/under the element, and one or more intervening elements may also be present. When an element is referred to as being 'on' or 'under', 'under the element' as well as 'on the element' can be included based on the element.
- In the drawings, the sizes of respective layers are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Further, the sizes of the respective elements do not denote the actual sizes thereof. Also, wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Hereinafter, a light emitting device, light emitting device package, illumination apparatus and display apparatus according to embodiments will be described with reference to the annexed drawings.
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FIG. 1 is a sectional view showing alight emitting device 100 according to a first embodiment. Referring toFIG. 1 , thelight emitting device 100 includes asubstrate 110, abuffer layer 112, a first conductivetype semiconductor layer 115, anactive layer 120, atunnel junction layer 125, a first conductive typefirst electrode 152, and a first conductive typesecond electrode 154. - The
substrate 110 may be a light transmitting substrate. For example, thesubstrate 110 may be selected from a group consisting of a sapphire substrate (Al2O3), GaN, SiC, ZnO, Si, GaP, InP, Ga2O3, and GaAs. An irregular pattern may be formed at an upper surface of thesubstrate 110. - The
buffer layer 112 is disposed between thesubstrate 110 and the first conductivetype semiconductor layer 115. Thebuffer layer 112 may relieve stress caused due to differences in lattice constant and coefficient of thermal expansion between thesubstrate 110 and the first conductivetype semiconductor layer 115. Since stress is relieved by thebuffer layer 112, cracks due to stress are prevented from being generated in the first conductivetype semiconductor layer 115, theactive layer 120 disposed on the first conductivetype semiconductor layer 115, and thetunnel junction layer 125. - The first conductive
type semiconductor layer 115 is disposed between thebuffer layer 112 and theactive layer 120. The first conductivetype semiconductor layer 115 may be a nitride semiconductor layer. The first conductivetype semiconductor layer 115 may be a semiconductor layer having a formula of InxAlyGa1-x-yN (0≤x≤1, 0 ≤y≤1, 0≤x+y≤1) doped with an n type dopant (for example, Si, Ge or Sn). For example, the first conductivetype semiconductor layer 115 may be selected from among InAlGaN, GaN, AlGaN, InGaN, AlN and InN, and may be doped with an n type dopant (for example, Si, Ge or Sn). - The
active layer 120 is disposed on the first conductivetype semiconductor layer 115. Theactive layer 120 may be formed of a III-V group element compound semiconductor material. Theactive layer 120 may be configured to have at least one selected from among a quantum wire structure, a quantum dot structure, a single quantum well (SQIN) structure, and a multi quantum well (MQW) structure. - If the
active layer 120 is configured to have a quantum well structure, theactive layer 120 may include a well layer having a formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and a barrier layer having a formula of InaAlbGa1-a-bN (0≤a≤1, 0≤b≤1, 0≤a+b≤1). The energy band gap of the well layer may be lower than that of the barrier layer. - The
active layer 120 shown inFIG. 1 may emit light having a wavelength of 250 nm to 340 nm, i.e. deep ultraviolet (DUV) light. - The
tunnel junction layer 125 includes a second conductive typenitride semiconductor layer 130 and a first conductive typenitride semiconductor layer 140. The second conductive typenitride semiconductor layer 130 and a first conductive typenitride semiconductor layer 140 may be PN junctioned. - The second conductive type
nitride semiconductor layer 130 may have a formula of InxAlyGa1-x- yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and doped with a second conductive type dopant (for example, Mg, Zn, Ca, Sr or Ba). - For example, the second conductive type
nitride semiconductor layer 130 may be selected from among InAlGaN, GaN, AlGaN, InGaN, AlN and InN, and may be doped with a p type dopant (for example, Mg, Zn, Ca, Sr or Ba). - The second conductive type
nitride semiconductor layer 130 may include a single layer or a plurality of layers. For example, the second conductive typenitride semiconductor layer 130 may include a plurality of second conductive type cladlayers layers - For example, the second conductive type clad layer more distant from the
active layer 120 may have higher concentration of the second conductive type dopant. - For example, the second conductive type
nitride semiconductor layer 130 may include a p-AlGaN layer 132, p-GaN layer 134, andp+ GaN layer 136. Here, p+ may have higher dopant concentration than p. - The first conductive type
nitride semiconductor layer 140 may have a formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and doped with a first conductive type dopant. For example, the first conductive typenitride semiconductor layer 140 may be doped with an n type dopant (for example, Si, Ge or Sn) as the first conductive type dopant. - The first conductive type
nitride semiconductor layer 140 may include a single layer or a plurality of layers. For example, the first conductive typenitride semiconductor layer 140 may include a plurality of first conductive type cladlayers layers active layer 120 may have higher dopant concentration. - For example, the first conductive type
nitride semiconductor layer 140 may include ann+ GaN layer 142 and an n-GaN layer 144. Here, n+ may have higher dopant concentration than n. - The first conductive type
first electrode 152 may be disposed on the first conductivetype semiconductor layer 115. For example, thetunnel junction layer 125, theactive layer 120, and the first conductivetype semiconductor layer 115 may be etched so as to expose a portion of the first conductivetype semiconductor layer 115. The first conductive typefirst electrode 152 may be disposed on the exposed portion of the first conductivetype semiconductor layer 115. The first conductive typesecond electrode 154 may be disposed on thetunnel junction layer 125. - The first conductive type
first electrode 152 may be in ohmic contact with the first conductivetype semiconductor layer 115. The first conductive typesecond electrode 154 may be in ohmic contact with the first conductive typenitride semiconductor layer 140 of thetunnel junction layer 125. - The first conductive type
first electrode 152 and the first conductive typesecond electrode 154 may be reflective electrodes formed of a reflective material that can be in ohmic contact with an n type nitride semiconductor layer. The first conductive typefirst electrode 152 and the first conductive typesecond electrode 154 may be in ohmic contact with an n type nitride semiconductor layer, and may be schottky contact with a p type nitride semiconductor layer. - For example, the first conductive type
first electrode 152 and the first conductive typesecond electrode 154 may be formed of Al, Al/Ti or an Al alloy (for example, Ti/Al alloy). Since the first conductive typefirst electrode 152 and the first conductive typesecond electrode 154 may be formed using the same material at the same process, the number of deposition processes to form the electrodes can be reduced. - If reverse bias is applied to the
tunnel junction layer 125 through the first conductive typefirst electrode 152 and the first conductive typesecond electrode 154, electrons in a valence band of the second conductive typenitride semiconductor layer 130 are tunneled to the first conductive typenitride semiconductor layer 140. As a result, holes are generated in the second conductive typenitride semiconductor layer 130, and the holes are injected into theactive layer 120 by the reverse bias. - The
active layer 120 may recombine the holes injected from the second conductive typenitride semiconductor layer 130 and the electrons injected from the first conductive typenitride semiconductor layer 140 to generate light. -
FIG. 9 is a view showing a general horizontal DUV light emitting device 1. Referring toFIG. 9 , the light emitting device 1 includes a substrate 1, abuffer layer 15, an n type semiconductor (for example, n-GaN)layer 20, anactive layer 30, p type semiconductor (for example, p-GaN) layers 40 and 50, afirst electrode 62, and asecond electrode 64. - In the horizontal DUV light emitting device 1, the p type semiconductor layers 40 and 50 are in ohmic contact with the
second electrode 64. Thesecond electrode 64, which functions as a reflective layer, is formed of Ni/Au or Ag. - However, p-GaN exhibits high absorptivity with respect to light having a wavelength of 360 nm or less, and silver (Ag) or gold (Au) exhibits low reflectance with respect to light having a wavelength of 360 nm or less.
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FIG. 5 is a view showing reflectance of aluminum (Al), gold (Au) and silver (Ag) based on wavelengths of light. Referring toFIG. 5 , Au exhibits a reflectance of 40 % or less with respect to light having a wavelength of 360 nm or less, and Ag exhibits a reflectance of 30 % or less with respect to light having a wavelength of 360 nm or less. On the other hand, Al exhibits a reflectance of 90 % or more with respect to light having a wavelength of 360 nm or less. - Aluminum (Al) is easily in ohmic contact with the first conductive type semiconductor (for example, n-GaN) layer but is not easily in ohmic contact with the second conductive type semiconductor (for example, p-GaN) layer.
- Embodiments use aluminum (Al) or an aluminum alloy, exhibiting high reflectance with respect to DUV light, as materials constituting the
electrodes tunnel junction layer 125 to easily achieve ohmic contact of theelectrodes -
FIG. 2 is a sectional view showing alight emitting device 200 according to a second embodiment. Components of the second embodiment identical to those of the first embodiment shown inFIG. 1 are denoted by the same reference numerals, and a duplicated description thereof will not be given. - Referring to
FIG. 2 , thelight emitting device 200 includes asubstrate 110, abuffer layer 112, a first conductivetype semiconductor layer 115, anactive layer 120, atunnel junction layer 125, a first conductive typefirst electrode 152, and a first conductive typesecond electrode 210. - The
tunnel junction layer 125 includes a second conductive typenitride semiconductor layer 130 and a first conductive typenitride semiconductor layer 140. The second conductive typenitride semiconductor layer 130 and a first conductive typenitride semiconductor layer 140 may be PN junctioned. - The first conductive type
second electrode 210 may be disposed on the first conductive typenitride semiconductor layer 140. A portion of the first conductive typesecond electrode 210 may be in schottky contact with the second conductive typenitride semiconductor layer 130 through the first conductive typenitride semiconductor layer 140. - The first conductive type
second electrode 210 may include afirst contact part 201 and asecond contact part 203 positioned under thefirst contact part 201. Thefirst contact part 201 may be a part which is in ohmic contact with the upper surface of the first conductive typenitride semiconductor layer 140 and the through portion of the first conductive typenitride semiconductor layer 140. Thesecond contact part 203 may be a part which is in schottky contact with the second conductive typenitride semiconductor layer 130 through the first conductive typenitride semiconductor layer 140. A portion of the second conductive typenitride semiconductor layer 130 is positioned between thesecond contact part 203 and theactive layer 120. Thesecond contact part 203 and theactive layer 120 are spaced apart from each other so that thesecond contact part 203 and theactive layer 120 do not contact each other. - The second conductive type
nitride semiconductor layer 130 may include at least one second conductive type clad layer (for example, 132) positioned between thesecond contact part 203 and theactive layer 120. - The
tunnel junction layer 125 may have at least onerecess 220, through which the second conductive typenitride semiconductor layer 130 is exposed. For example, thetunnel junction layer 125 may expose at least one of the second conductive type cladlayers - A portion of the first conductive type
second electrode 210 is disposed in therecess 220 so that the first conductive typesecond electrode 210 can be in ohmic contact with the portion of the first conductive typenitride semiconductor layer 140 exposed through therecess 220 and can be in schottky contact with the portion of the second conductive typenitride semiconductor layer 130 exposed through therecess 220. Current does not flow to aschottky contact interface 212 between the first conductive typesecond electrode 210 and the second conductive typenitride semiconductor layer 130. Consequently, theschottky contact interface 212 may function as a current blocking layer to prevent concentration of current. - In the second embodiment, current concentration is restrained by the
schottky contact interface 212, thereby improving light emission efficiency of thelight emitting device 200. -
FIG. 3 is a sectional view showing alight emitting device 300 according to a third embodiment. Components of the third embodiment identical to those of the first embodiment shown inFIG. 1 are denoted by the same reference numerals, and a duplicated description thereof will not be given. - Referring to
FIG. 3 , thelight emitting device 300 includes asubstrate 110, abuffer layer 112, a first conductivetype semiconductor layer 115, anactive layer 120, atunnel junction layer 125, a first conductive typefirst electrode 152, and a first conductive typesecond electrode 315. - The
tunnel junction layer 125 may have at least onerecess 302, through which the second conductive typenitride semiconductor layer 130 is exposed. For example, at least one of the second conductive type cladlayers recess 302. - The first conductive type
second electrode 315 is disposed on lateral surface and lower surface of therecess 302 and is disposed on the first conductive typenitride semiconductor layer 140. The first conductive typesecond electrode 315 may be in schottky contact with the exposed portion of the conductive typenitride semiconductor layer 130. - The first conductive type
second electrode 315 may include afirst contact part 311 and asecond contact part 312. - The
first contact part 311 may be in ohmic contact with the upper surface of the first conductive typenitride semiconductor layer 140 and the portion of the first conductive typenitride semiconductor layer 140 exposed through therecess 302. - The
second contact part 312 may be in schottky contact with the portion of the second conductive typenitride semiconductor layer 130 exposed through therecess 302. - A portion of the second conductive type
nitride semiconductor layer 130 is positioned between thesecond contact part 312 and theactive layer 120. Thesecond contact part 312 and theactive layer 120 are spaced apart from each other so that thesecond contact part 312 and theactive layer 120 do not contact each other. For example, at least one of the second conductive type cladlayers second contact part 312 and theactive layer 120. - Current does not flow well to a
schottky contact interface 212 between the first conductive typesecond electrode 315 and the second conductive typenitride semiconductor layer 130. Consequently, theschottky contact interface 212 may function as a current blocking layer to prevent concentration of current. In the third embodiment, therefore, current concentration is restrained by theschottky contact interface 212, thereby improving light emission efficiency of thelight emitting device 300. - Furthermore, in the second and third embodiments, the tunnel junction layers 125 having the
recesss second electrodes - In the second and third embodiments, therefore, light emission efficiency and reflectance are improved as compared with the first embodiment.
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FIG. 4 is a sectional view showing alight emitting device 400 according to a fourth embodiment. Components of the fourth embodiment identical to those of the first embodiment shown inFIG. 1 are denoted by the same reference numerals, and a duplicated description thereof will not be given. - Referring to
FIG. 4 , thelight emitting device 400 includes asubstrate 110, abuffer layer 112, a first conductivetype semiconductor layer 115, anactive layer 120, atunnel junction layer 125, adielectric layer 410, a first conductive typefirst electrode 152, and a first conductive typesecond electrode 420. - The
tunnel junction layer 125 may have at least onerecess 401. The second conductive typenitride semiconductor layer 130 may be exposed through therecess 401. For example, at least one of the second conductive type cladlayers recess 401. - At least one second conductive type clad layer (for example, 132) may be positioned between the lower surface of the
recess 401 and theactive layer 120. Alternatively, at least one of the first conductive type cladlayers nitride semiconductor layer 130 may be positioned between the lower surface of therecess 401 and theactive layer 120. - The
recess 401 is filled with thedielectric layer 410. Thedielectric layer 410 may be a light transmitting insulating material including at least one selected from among SiO2, SiNx, TiO2, Ta2O3, SiON and SiCN. - The first conductive type
second electrode 420 is disposed on thetunnel junction layer 125 and thedielectric layer 410. For example, the first conductive typesecond electrode 420 may be disposed on the first conductive typenitride semiconductor layer 140 and thedielectric layer 410. At least a portion of the first conductive typesecond electrode 420 may overlap with thedielectric layer 410 in the vertical direction. The vertical direction may be a direction from the first conductivetype semiconductor layer 115 to thetunnel junction layer 125. The first conductive typesecond electrode 420 may be in ohmic contact with the first conductive typenitride semiconductor layer 140. - Current does not flow through the
dielectric layer 410 under the first conductive typesecond electrode 420. Consequently, thedielectric layer 410 may function as a current blocking layer to prevent concentration of current. In the fourth embodiment, therefore, current concentration is restrained by thedielectric layer 410, thereby improving light emission efficiency of thelight emitting device 400. -
FIG. 6 is a sectional view showing a light emitting device 500-1 according to a fifth embodiment. Referring toFIG. 6 , the light emitting device 500-1 includes asecond electrode layer 310, aprotection layer 320, alight emitting structure 340, apassivation layer 350, and afirst electrode 360. - The
second electrode layer 310 may support thelight emitting structure 340 and may supply first power (for example, negative power) to thelight emitting structure 340. Thesecond electrode layer 310 may include asupport layer 301 and areflective layer 305. - The
support layer 301 may be a metal layer including at least one selected from among copper (Cu), tungsten (W) and molybdenum (Mo). Alternatively, thesupport layer 301 may include at least one selected from among Si, Ge, GaAs, ZnO and SiC. - The
reflective layer 305 may be disposed between thesupport layer 301 and thelight emitting structure 340. Thereflective layer 305 may be formed of a metal or metal alloy including at least one selected from among Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf. - A bonding layer (not shown) is disposed between the
support layer 301 and thereflective layer 305. The bonding layer may function to prevent diffusion of metal ions from thesupport layer 301 and bond thesupport layer 301 and thereflective layer 305. For example, the bonding layer may include at least one selected from among Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta. - The
protection layer 320 is disposed on the edge of thesecond electrode layer 310. For example, theprotection layer 320 may be disposed on the edge of thesupport layer 301. Alternatively, theprotection layer 320 may be disposed on the edge of thereflective layer 305. - The
protection layer 320 prevents thelight emitting structure 340 and thesecond electrode layer 310 from being separated from each other at the interface therebetween during isolation etching of thelight emitting structure 340 for unit chip division, thereby preventing deterioration in reliability of the light emitting device 500-1. Theprotection layer 320 may be formed of an electrically dielectric material, such as ZnO, SiO2 Si3N4, TiOx (x is a positive real number) or Al2O3. - The
light emitting structure 340 is disposed on thesecond electrode layer 310. The lateral surface of thelight emitting structure 340 may be inclined during isolation etching of thelight emitting structure 340 for unit chip division. - The
light emitting structure 340 includes atunnel junction layer 330, anactive layer 344, and a first conductivetype semiconductor layer 346. - A
tunnel junction layer 330 includes a first conductive typenitride semiconductor layer 332 and a second conductive type nitride semiconductor layer 334. The first conductive typenitride semiconductor layer 332 and the second conductive type nitride semiconductor layer 334 may be PN junctioned. - Here, the first conductive type
nitride semiconductor layer 332 may be identical to the first conductive typenitride semiconductor layer 140 shown inFIG. 1 , and the second conductive type nitride semiconductor layer 334 may be identical to the second conductive typenitride semiconductor layer 130 shown inFIG. 1 . Although not shown inFIG. 6 , therefore, the first conductive typenitride semiconductor layer 332 may include a plurality of first conductive type clad layers, e.g. an n+ GaN layer 1and an n-GaN layer. Also, the second conductive type nitride semiconductor layer 334 may include a plurality of second conductive type clad layers, e.g. a p-AlGaN layer, p-GaN layer, and p+ GaN layer. - The
second electrode layer 310 may be in ohmic contact with the first conductive typenitride semiconductor layer 332. For example, thereflective layer 305 may be in ohmic contact with the first conductive typenitride semiconductor layer 332. - A portion of the
second electrode layer 310 may be in schottky contact with the second conductive type nitride semiconductor layer 334 through the first conductive typenitride semiconductor layer 332. - For example, a portion of the
reflective layer 305 may be in schottky contact with the second conductive type nitride semiconductor layer 334 through the first conductive typenitride semiconductor layer 332. - The
second electrode layer 310 may include afirst contact part 362 and asecond contact part 364. For example, thereflective layer 305 may include thefirst contact part 362 and thesecond contact part 364. - The
first contact part 362 may be a part which is in ohmic contact with one surface of the first conductive typenitride semiconductor layer 332 and the through portion of the first conductive typenitride semiconductor layer 332. Thesecond contact part 364 may be a part which is in schottky contact with the second conductive type nitride semiconductor layer 334 through the first conductive typenitride semiconductor layer 332. - The second conductive type nitride semiconductor layer 334 may be positioned between the
second contact part 364 and theactive layer 344. Thesecond contact part 364 and theactive layer 344 do not contact each other. That is, at least one of the second conductive type clad layers may be positioned between thesecond contact part 364 and theactive layer 344. Thesecond contact part 364 may overlap with thefirst electrode 360 in the vertical direction. The vertical direction may be a direction from the first conductivetype semiconductor layer 346 to thetunnel junction layer 330. - Current does not flow to a schottky contact interface between the
second electrode layer 310 and the second conductive type nitride semiconductor layer 334. Consequently, thesecond contact part 364 may function as a current blocking layer to prevent concentration of current. In the fifth embodiment, current concentration is restrained by thesecond contact part 364, thereby improving light emission efficiency of the light emitting device 500-1. - The
passivation layer 350 wraps the lateral side of thelight emitting structure 340 to electrically protect thelight emitting structure 340. Thepassivation layer 350 may contact theprotection layer 320. Thepassivation layer 350 may be formed of a light transmitting dielectric material, such as SiO2 SiOx, SiOxNy, Si3N4 or Al2O3. - The
active layer 344 and the first conductivetype semiconductor layer 346 may be identical to those shown inFIG. 1 . The surface of the first conductivetype semiconductor layer 346 may haveroughness 370 to improve light extraction efficiency. -
FIG. 7 is a sectional view showing a light emitting device 500-2 according to a sixth embodiment. Components of the sixth embodiment identical to those of the fifth embodiment shown inFIG. 6 are denoted by the same reference numerals, and a duplicated description thereof will not be given. - Referring to
FIG. 7 , the light emitting device 500-2 includes a second electrode layer 310-1, aprotection layer 320, adielectric layer 430, alight emitting structure 340, apassivation layer 350, and afirst electrode 360. - The second electrode layer 310-1 includes a
support layer 301 and a reflective layer 305-1. Thesupport layer 301 may be in ohmic contact with a first conductive typenitride semiconductor layer 332. For example, the reflective layer 305-1 may be in ohmic contact with a first conductive typenitride semiconductor layer 332. - A
tunnel junction layer 330 may have at least onerecess 405. A second conductive type nitride semiconductor layer 334 may be exposed through therecess 405. Alternatively, at least one of first conductive type clad layers may be exposed through therecess 405. - At least one second conductive type clad layer may be positioned between the
recess 405 and anactive layer 344. Alternatively, at least one of the first conductive type clad layers and the second conductive type nitride semiconductor layer 334 may be positioned between therecess 405 and theactive layer 344. - The
recess 405 is filled with thedielectric layer 430. Thedielectric layer 430 may include at least one selected from among SiO2 SiNx, TiO2 Ta2O3, SiON and SiCN. At least a portion of thedielectric layer 430 may overlap with thefirst electrode 360 in the vertical direction. - The
dielectric layer 430 is positioned between the second electrode layer 310-1 and the second conductive type nitride semiconductor layer 334. Current does not flow through thedielectric layer 430. Consequently, thedielectric layer 430 may function as a current blocking layer to prevent concentration of current. In the sixth embodiment, therefore, current concentration is restrained by thedielectric layer 430, thereby improving light emission efficiency of the light emitting device 500-2. -
FIG. 8 is a sectional view showing a light emittingdevice package 600 according to an embodiment. Components of this embodiment identical to those of the first embodiment shown inFIG. 1 are denoted by the same reference numerals, and a duplicated description thereof will not be given. - Referring to
FIG. 8 , the light emittingdevice package 600 includes asubmount 610, alight emitting device 501, afirst metal layer 222, asecond metal layer 224, a first bump unit 230, and asecond bump unit 240. - The
submount 610 is provided to mount thelight emitting device 501 thereon. Thesubmount 610 may be realized using a package body or a printed circuit board. Thesubmount 610 may be configured in various forms which thelight emitting device 501 can be flip chip bonded to. - The
light emitting device 501 is mounted on thesubmount 610. Thelight emitting device 501 may be electrically connected to thesubmount 610 via the first bump unit 230 and thesecond bump unit 240. - The
light emitting device 501 shown inFIG. 8 may be the light emitting device according to the first embodiment. However, thelight emitting device 501 is not limited thereto. Thelight emitting device 501 may be one of the light emitting devices according to the second to fourth embodiments. InFIG. 8 , the light emitting device shown inFIG. 1 is shown in an overturned state. - The
submount 610 is disposed under a first conductive typefirst electrode 152 and a first conductive typesecond electrode 154. That is, the first conductive typefirst electrode 152 and the first conductive typesecond electrode 154 may be disposed so as to face thesubmount 610. - The
submount 610 may include a resin such as polyphthalamide (PPA), liquid crystal polymer (LCP), polyamide 9T (PA9T), a metal, photosensitive glass, sapphire, ceramic or a printed circuit board. However, thesubmount 610 according to this embodiment is not limited thereto. - The
first metal layer 222 and thesecond metal layer 224 are disposed at the upper surface of thesubmount 610 so that thefirst metal layer 222 and thesecond metal layer 224 can be electrically separated from each other. Here, the upper surface of thesubmount 610 may be a surface opposite thelight emitting device 501. - The
first metal layer 222 and the first conductive typefirst electrode 152 may be aligned in the vertical direction, and thesecond metal layer 224 and the first conductive typesecond electrode 154 may be aligned in the vertical direction. Here, the vertical direction may be a direction from thesubmount 610 to thelight emitting device 501. - The first bump unit 230 and the
second bump unit 240 may be disposed on thesubmount 610 so that the first bump unit 230 and thesecond bump unit 240 can be electrically separated from each other. The first bump unit 230 may be disposed between the first conductive typefirst electrode 152 and thefirst metal layer 222 to electrically interconnect the first conductive typefirst electrode 152 and thefirst metal layer 222. Thesecond bump unit 240 may be disposed between the first conductive typesecond electrode second metal layer 224 to electrically interconnect the first conductive typesecond electrode second metal layer 224. - The first bump unit 230 may include a first diffusion
prevention bonding layer 232, a first bumper 236, and a second diffusionprevention bonding layer 234. The first bumper 236 may be disposed between the first conductive typefirst electrode 152 and thefirst metal layer 222 to electrically interconnect the first conductive typefirst electrode 152 and thefirst metal layer 222. - The first diffusion
prevention bonding layer 232 may be disposed between the first conductive typefirst electrode 152 and the first bumper 236 to bond the first conductive typefirst electrode 152 and the first bumper 236. The first diffusionprevention bonding layer 232 may improve bonding force between the first bumper 236 and the first conductive typefirst electrode 152 and prevent ions contained in the first bumper 236 from penetrating or diffusing into a first conductivetype semiconductor layer 115 through the first conductive typefirst electrode 152. - The second diffusion
prevention bonding layer 234 may be disposed between the first bumper 236 and thefirst metal layer 222 to bond the first bumper 236 and thefirst metal layer 222. The second diffusionprevention bonding layer 234 may improve bonding force between the first bumper 236 and thefirst metal layer 222 and prevent ions contained in the first bumper 236 from penetrating or diffusing into thesubmount 610 through thefirst metal layer 222. - The
second bump unit 240 may include a third diffusionprevention bonding layer 242, asecond bumper 246, and a fourth diffusionprevention bonding layer 244. Thesecond bumper 246 may be disposed between the first conductive typesecond electrode 154 and thesecond metal layer 224 to electrically interconnect the first conductive typesecond electrode 154 and thesecond metal layer 224. - The third diffusion
prevention bonding layer 242 may be disposed between the first conductive typesecond electrode 154 and thesecond bumper 246 to bond the first conductive typesecond electrode 154 and thesecond bumper 246. The third diffusionprevention bonding layer 242 may improve bonding force between thesecond bumper 246 and the first conductive typesecond electrode 154 and prevent ions contained in thesecond bumper 246 from penetrating or diffusing into atunnel junction layer 125 through the first conductive typesecond electrode 154. - The fourth diffusion
prevention bonding layer 244 may be disposed between thesecond bumper 246 and thesecond metal layer 224 to bond thesecond bumper 246 and thesecond metal layer 224. The fourth diffusionprevention bonding layer 244 may improve bonding force between thesecond bumper 246 and thesecond metal layer 224 and prevent ions contained in thesecond bumper 246 from penetrating or diffusing into thesubmount 610 through thesecond metal layer 224. - The first to fourth diffusion prevention bonding layers 232, 234, 242 and 244 may be formed of at least one selected from among Pt, Ti, W/Ti and Au or an alloy thereof. The first bumper 236 and the
second bumper 246 may include at least one selected from among titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chrome (Cr), tantalum (Ta), platinum (Pt) and tin (Sn). - The light emitting
device package 600 includes alight emitting device 501 including a first conductive typefirst electrode 152 and a first conductive typesecond electrode 154, which are formed of aluminum or an aluminum alloy exhibiting high reflectance with respect to DUV light. Thelight emitting device 501 includes atunnel junction layer 125 having a PN junction to easily achieve ohmic contact between the first conductive typefirst electrode 152 and the first conductive typesecond electrode 154. In the light emittingdevice package 600, therefore, reflectance with respect to light having a wavelength of 250 nm to 340 nm is improved, and light extraction efficiency is improved. - A plurality of light emitting device packages 600, one of which is shown in
FIG. 8 , may be arranged on a board. An optical member, such as a light guide plate, a prism sheet, or a diffusion sheet, may be disposed on an optical path of the light emittingdevice package 600. The light emitting device package, the substrate, and the optical member may function as a backlight unit. - In other embodiments, a display apparatus, indication apparatus and illumination system including the light emitting device or the light emitting device package according to one of the previous embodiments may be realized. For example, the illumination system may include a lamp and a streetlight.
-
FIG. 10 is an exploded perspective view showing an illumination apparatus according to an embodiment. - Referring to
FIG. 10 , the illumination apparatus includes a light source 750, ahousing 700 in which the light source 750 is mounted, a heat sink 740 to dissipate heat from the light source 750, and a holder 760 to couple the light source 750 and the heat sink 740 to thehousing 700. - The
housing 700 includes a socket coupling part 710 coupled to an electrical socket (not shown) and a body part 730, connected to the socket coupling part 710, in which the light source 750 is mounted. The body part 730 may have an air flow hole 720. - Alternatively, a plurality of air flow holes 720 may be formed in the body part 730 of the
housing 700. That is, one or more air flow holes 720 may be provided. The air flow holes 720 may be arranged at the body part 730 in a radial manner or in various other manners. - The light source 750 includes a plurality of light emitting device packages 752 provided on a board 753. The board 754 may be formed in a shape that can be inserted into an opening of the
housing 700. As described below, the board 754 may be formed of a material exhibiting high thermal conductivity to transfer heat to the heat sink 740. Each of the light emitting device packages may be one of the previous embodiments. - The holder 760 is provided under the light source 750. The holder 760 may have a frame and another air flow hole. Also, although not shown, an optical member may be provided under the light source 750 to diffuse, scatter or converge light emitted from the light emitting device packages 752 of the light source 750.
-
FIG. 11A is a view showing a display apparatus including a light emitting device package according to an embodiment, andFIG. 11B is a sectional view showing a light source of the display apparatus shown inFIG. 11A . - Referring to
FIGs. 11A and 11B , the display apparatus includes a backlight unit, a liquidcrystal display panel 860, atop cover 870 and a fixing member 850. - The backlight unit includes a
bottom cover 810, alight emitting module 880 provided in thebottom cover 810 at one side thereof, areflection plate 820 disposed at the front of thebottom cover 810, alight guide plate 830 disposed in front of thereflection plate 820 to guide light emitted from thelight emitting module 880 to the front of the display apparatus, and an optical member 840 disposed in front of thelight guide plate 830. The liquidcrystal display panel 860 is disposed in front of the optical member 840. Thetop cover 870 is provided in front of the liquidcrystal display panel 860. The fixing member 850 is disposed between thebottom cover 810 and thetop cover 870 to fix thebottom cover 810 and thetop cover 870. - The
light guide plate 830 functions to guide light emitted from thelight emitting module 880 so that the light can be emitted in a surface emitting manner. Thereflection plate 820, disposed at the rear of thelight guide plate 830, functions to reflect light emitted from light emittingmodule 880 toward thelight guide plate 830, thereby improving light efficiency. Although thereflection plate 820 is provided as a separate component as shown in the drawing, the rear of thelight guide plate 830 or the front of thebottom cover 810 may be coated with a material exhibiting high reflectance to form thereflection plate 820. Thereflection plate 820 may be formed of a material that exhibits high reflectance and can be formed in a very thin shape. For example, thereflection plate 820 may be formed of polyethylene terephthalate (PET). - The
light guide plate 830 scatters light emitted from thelight emitting module 880 so that the light can be uniformly distributed over the light crystal display panel. To this end, thelight guide plate 830 is formed of a material exhibiting high index of refraction and transmissivity. For example, thelight guide plate 830 may be formed of polymethylmethacrylate (PMMA), polycarbonate (PC) or polyethylene (PE). - The optical member 840 is provided on the
light guide plate 830 to diffuse light emitted from thelight guide plate 830 at a predetermined angle. Light guided by thelight guide plate 830 is uniformly irradiated to the liquidcrystal display panel 860 by the optical member 840. An optical sheet, such as a diffusion sheet, a prism sheet or a protection sheet, may be selectively stacked to constitute the optical member 840. Alternatively, a micro lens array may be used. A plurality of optical sheets may be used. The optical sheet may be formed of a transparent resin, such as an acryl resin, a polyurethane resin or a silicone resin. A fluorescent sheet may be included in the prism sheet. - The liquid
crystal display panel 860 may be provided at the front of the optical member 840. Other kinds of display apparatuses requiring a light source may be provided in addition to the liquidcrystal display panel 860. Thereflection plate 820 is disposed on thebottom cover 810, and thelight guide plate 830 is disposed on thereflection plate 820. As a result, thereflection plate 820 may directly contact a heat sink (not shown). Thelight emitting module 880 includes a light emittingdevice package 881 and a printedcircuit board 882. The light emittingdevice package 881 is mounted on the printedcircuit board 882. The light emitting device package shown inFIG. 8 may be used as the light emittingdevice package 881. - The printed
circuit board 882 may be bonded to abracket 812. Thebracket 812 fixes the light emittingdevice package 881. Thebracket 812 may be formed of a material exhibiting high thermal conductivity to dissipate heat. Although not shown, a heat pad may be provided between thebracket 812 and the light emittingdevice package 881 to easily achieve heat transfer. As shown in the drawing, thebracket 812 is formed in an L shape so that ahorizontal portion 812a can be supported by thebottom cover 810 and a vertical portion 812b can fix the printedcircuit board 882. - As is apparent from the above description, embodiments provide a light emitting device and a light emitting device package with improved reflectance and optical extraction efficiency.
- Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.
Claims (14)
- A light emitting device comprising:a first conductive type semiconductor layer;an active layer disposed on the first conductive type semiconductor layer;a tunnel junction layer comprising a second conductive type nitride semiconductor layer and a first conductive type nitride semiconductor layer disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned;a first electrode disposed on the first conductive type semiconductor layer; anda second electrode disposed on the first conductive type nitride semiconductor layer, wherein a portion of the second electrode is in schottky contact with the second conductive type nitride semiconductor layer through the first conductive type nitride semiconductor layer.
- The light emitting device according to claim 1, wherein the second electrode comprises:a first contact part in ohmic contact with an upper surface of the first conductive type nitride semiconductor layer and a through portion of the first conductive type nitride semiconductor layer; anda second contact part in schottky contact with the second conductive type nitride semiconductor layer.
- The light emitting device according to claim 2, wherein a portion of the second conductive type nitride semiconductor layer is positioned between the second contact part and the active layer.
- The light emitting device according to any one of claims 1 to 3, wherein
the tunnel junction layer has at least one recess through which the second conductive type nitride semiconductor layer is exposed, and
the second electrode is disposed on an upper surface and lateral surface of the at least one recess. - The light emitting device according to claim 4, wherein a portion of the second electrode is in schottky contact with the second conductive type nitride semiconductor layer exposed through the at least one recess.
- The light emitting device according to claim 4, wherein a portion of the second electrode is in ohmic contact with the first conductive type nitride semiconductor layer exposed through the at least one recess.
- The light emitting device according to claim 2, wherein the second contact part and the second electrode overlap in a vertical direction.
- The light emitting device according to any one of claims 1 to 7, wherein the first conductive type nitride semiconductor layer comprises a plurality of first conductive type clad layers having different concentrations and/or compositions of a first dopant.
- The light emitting device according to claim 8, wherein the second conductive type nitride semiconductor layer comprises a plurality of second conductive type clad layers having different concentrations and/or compositions of a second dopant.
- The light emitting device according to any one of claims 1 to 9, wherein the active layer emits light having a wavelength of 250 nm to 340 nm.
- The light emitting device according to any one of claims 1 to 10, wherein the first electrode and the second electrode are reflective electrodes comprising Al, Al/Ti or an Al alloy.
- A light emitting device package comprising:a submount;a first metal layer and a second metal layer disposed on the submount;a light emitting device disposed on the submount;a first bump unit electrically interconnecting the light emitting device and the first metal layer; anda second bump unit electrically interconnecting the light emitting device and the second metal layer, wherein the light emitting device comprises:a light transmitting substrate;a first conductive type semiconductor layer disposed on the light transmitting substrate;an active layer disposed on the first conductive type semiconductor layer;a tunnel junction layer comprising a second conductive type nitride semiconductor layer and a first conductive type nitride semiconductor layer disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned;a first electrode disposed on the first conductive type semiconductor layer; anda second electrode disposed on the first conductive type nitride semiconductor layer, wherein a portion of the second electrode is in schottky contact with the second conductive type nitride semiconductor layer through the first conductive type nitride semiconductor layer.
- The light emitting device package according to claim 12, wherein the active layer of the light emitting device emits light having a wavelength of 250 nm to 340 nm.
- The light emitting device package according to claim 12 or 13, wherein the first electrode and the second electrode are reflective electrodes comprising Al, Al/Ti or an Al alloy.
Applications Claiming Priority (1)
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KR1020110053181A KR101813934B1 (en) | 2011-06-02 | 2011-06-02 | A light emitting device and a light emitting devcie package |
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EP2530745A1 true EP2530745A1 (en) | 2012-12-05 |
EP2530745B1 EP2530745B1 (en) | 2017-12-06 |
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US (1) | US8754430B2 (en) |
EP (1) | EP2530745B1 (en) |
KR (1) | KR101813934B1 (en) |
CN (1) | CN102810615B (en) |
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CN102810609B (en) * | 2012-08-16 | 2015-01-21 | 厦门市三安光电科技有限公司 | Ultraviolet semiconductor light emitting device and manufacturing method thereof |
CN103928599B (en) * | 2013-01-14 | 2016-08-17 | 上海蓝光科技有限公司 | A kind of light emitting diode and manufacture method thereof |
CN103928600B (en) * | 2013-01-14 | 2017-05-24 | 上海蓝光科技有限公司 | LED and manufacturing method thereof |
WO2014107955A1 (en) * | 2013-01-14 | 2014-07-17 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method therefor |
CN103682012A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | Deep UV (Ultraviolet) LED and preparation method thereof |
KR102412409B1 (en) * | 2015-10-26 | 2022-06-23 | 엘지전자 주식회사 | Display device using semiconductor light emitting device and method for manufacturing the same |
KR102582184B1 (en) * | 2016-09-01 | 2023-09-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Semiconductor device and semiconductor device package including the same |
KR102524809B1 (en) * | 2017-12-19 | 2023-04-24 | 삼성전자주식회사 | Ultraviolet semiconductor light emitting devices |
CN109346579A (en) * | 2018-08-13 | 2019-02-15 | 华灿光电(浙江)有限公司 | A kind of LED epitaxial slice and preparation method thereof |
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DE102004050891A1 (en) * | 2004-10-19 | 2006-04-20 | LumiLeds Lighting, U.S., LLC, San Jose | Group III-nitride light-emitting device, e.g. light-emitting diode, comprises active region between first layers of first and second conductivity types, tunnel junction between first and second layers of first conductive type, and contacts |
US20070284606A1 (en) * | 2006-05-17 | 2007-12-13 | Sanken Electric Co., Ltd. | High-efficiency, overvoltage-protected, light-emitting semiconductor device |
DE102007003282A1 (en) * | 2007-01-23 | 2008-07-24 | Osram Opto Semiconductors Gmbh | LED chip |
DE102007057672A1 (en) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body e.g. thin film-LED chip, for use in headlight i.e. motor vehicle headlight, has Schottky contact formed between extension and n-type layer and operated in reverse direction during operation of active layer |
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JP3856750B2 (en) | 2001-11-13 | 2006-12-13 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
US6847057B1 (en) * | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
JP4978014B2 (en) * | 2006-01-30 | 2012-07-18 | サンケン電気株式会社 | Semiconductor light emitting device and manufacturing method thereof |
US8012758B2 (en) | 2007-02-16 | 2011-09-06 | Nalco Company | Method of monitoring microbiological activity in process streams |
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2011
- 2011-06-02 KR KR1020110053181A patent/KR101813934B1/en active IP Right Grant
-
2012
- 2012-02-06 US US13/367,101 patent/US8754430B2/en active Active
- 2012-03-12 CN CN201210068656.8A patent/CN102810615B/en not_active Expired - Fee Related
- 2012-03-19 EP EP12160198.3A patent/EP2530745B1/en not_active Not-in-force
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DE102004050891A1 (en) * | 2004-10-19 | 2006-04-20 | LumiLeds Lighting, U.S., LLC, San Jose | Group III-nitride light-emitting device, e.g. light-emitting diode, comprises active region between first layers of first and second conductivity types, tunnel junction between first and second layers of first conductive type, and contacts |
US20070284606A1 (en) * | 2006-05-17 | 2007-12-13 | Sanken Electric Co., Ltd. | High-efficiency, overvoltage-protected, light-emitting semiconductor device |
DE102007003282A1 (en) * | 2007-01-23 | 2008-07-24 | Osram Opto Semiconductors Gmbh | LED chip |
DE102007057672A1 (en) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body e.g. thin film-LED chip, for use in headlight i.e. motor vehicle headlight, has Schottky contact formed between extension and n-type layer and operated in reverse direction during operation of active layer |
Also Published As
Publication number | Publication date |
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KR20120134336A (en) | 2012-12-12 |
US20120138993A1 (en) | 2012-06-07 |
CN102810615A (en) | 2012-12-05 |
CN102810615B (en) | 2017-03-01 |
US8754430B2 (en) | 2014-06-17 |
EP2530745B1 (en) | 2017-12-06 |
KR101813934B1 (en) | 2018-01-30 |
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