EP2510397A1 - Method for manufacturing a multilayer structure with a lateral pattern for application in the xuv wavelength range, and bf and lmag structures manufactured according to this method - Google Patents

Method for manufacturing a multilayer structure with a lateral pattern for application in the xuv wavelength range, and bf and lmag structures manufactured according to this method

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Publication number
EP2510397A1
EP2510397A1 EP10796182A EP10796182A EP2510397A1 EP 2510397 A1 EP2510397 A1 EP 2510397A1 EP 10796182 A EP10796182 A EP 10796182A EP 10796182 A EP10796182 A EP 10796182A EP 2510397 A1 EP2510397 A1 EP 2510397A1
Authority
EP
European Patent Office
Prior art keywords
multilayer structure
lateral
pattern
layers
boron carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10796182A
Other languages
German (de)
French (fr)
Other versions
EP2510397B1 (en
Inventor
Frederik Bijkerk
Wilfred Gerard Van Der Wiel
Robert Van Der Meer
Petronella Emerentiana Hegeman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Malvern Panalytical BV
Original Assignee
Panalytical BV
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Filing date
Publication date
Application filed by Panalytical BV filed Critical Panalytical BV
Publication of EP2510397A1 publication Critical patent/EP2510397A1/en
Application granted granted Critical
Publication of EP2510397B1 publication Critical patent/EP2510397B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Definitions

  • the invention relates to a method for manufacturing a multilayer structure with a lateral pattern, in particular of an optical grating for application in an optical device for electromagnetic radiation with a wavelength in the wavelength range between 0.1 nro and 100 nm, comprising the steps of (i) providing a multilayer structure, and (ii) arranging a
  • the wavelength range between 0.1 nm and 10 m comprises the hard X-ray range ⁇ wavelength between 0.1 nm and 10 nm) and the so-called XUV range ⁇ wavelength between 10 nm and 100 nm) which includes the range around a wavelength of 13.5 nm, referred to in literature as EUV radiation, as well as
  • Such an optical grating is for instance applied in the production of semiconductor circuits within the technical field of nanolithography .
  • a particular example of such an optical grating is a so-called nano-Bragg-Fresnel (BF) structure, which forms a combination of a reflective optical element, a Bragg grating , a so-called nano-Bragg-Fresnel (BF) structure, which forms a combination of a reflective optical element, a Bragg grating , a so-called nano-Bragg-Fresnel (BF) structure, which forms a combination of a reflective optical element, a Bragg
  • BF nano-Bragg-Fresnel
  • LMAG lamellar multilayer amplitude grating
  • DOV photolithography encounters problems of a fundamental nature at resolution levels in the structure to be
  • Both methods have the drawback that the width of a lamella in a periodic lateral pattern amounts to a minimum of several hundred nanometres, while the period amounts to at least one pm.
  • step (ii) of arranging the lateral pattern is performed by means of a method for nano- imprint lithography (NIL) .
  • the method for nano-imprint lithography for instance comprises at least the steps of (a) providing a stamp with a stamp pattern corresponding to the lateral three-dimensional pattern to be arranged, (b) applying a layer of a curable resist material to the multilayer
  • step (c) arranging the stamp pattern, using the stamp, in the layer of resist material applied according to step (b) , and curing this material, and (d) removing from the multilayer structure material not, or at least substantially not covered by resist material in accordance with the stamp pattern while forming the lateral three-dimensional pattern in the multilayer structure.
  • a metal layer is deposited, prior to step (b) or following step ⁇ c) , onto the multilayer structure which is flat or provided with a lateral pattern, and is subsequently applied as etching mask.
  • the stamp to be provided according to the invention is for instance manufactured from Si or S1O 2 (quartz) , in which the stamp pattern is arranged in accordance with a per se known method, for instance by means of electron beam
  • EBL lithography
  • laser interference lithography lithography
  • the layer of resist material is removed using a solvent, and the multilayer structure provided with a three-dimensional pattern can be subjected to a subsequent process step.
  • step (d) is for instance performed in accordance with a method for reactive ion etching (RIE) , by means of an inductively coupled plasma (ICP) or according to a Bosch-type etching method.
  • RIE reactive ion etching
  • ICP inductively coupled plasma
  • the lateral three-dimensional pattern to be formed in the multilayer structure in step (d) is given a parallel, widening wedge-shaped or narrowing wedge-shaped form from the surface of the multilayer structure.
  • the resist material to be applied according to step (b) is preferably a UV-curable plastic which in cured state has a relatively low viscosity, for instance a polymethyl
  • PMMA methacrylate
  • step (ii) of arranging the lateral pattern is followed by step (iii) of applying a cover layer over the three-dimensional pattern.
  • the invention also relates to a multilayer structure with a periodic lateral pattern manufactured according to the above described method, wherein the period is smaller than 1 ⁇ .
  • the invention also relates to a BF structure manufactured according to the above described method, wherein the
  • multilayer structure comprises a stack of layers of a first material from a first group comprising carbon (C) and silicon (Si) and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements.
  • the layers of the second material are selected from the group of transition elements comprising cobalt (Co) , nickel (Ni) , molybdenum (Mo) , tungsten (W) , rhenium (Re) and iridium (Ir) .
  • an optical element becomes available which can be applied for wavelength selection, focusing and collimation of radiation in the wavelength range between 0.1 nm and 100 nm with an efficiency which is not achievable with a prior art
  • the invention further relates to an LMAG structure manufactured according to the above described method, wherein the multilayer structure comprises a stack of layers of a first material from a first group comprising boron (B), boron carbide (B 4 C) , carbon (C) , silicon (Si) and scandium (Sc) , and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements.
  • B boron
  • B 4 C boron carbide
  • C carbon
  • Si silicon
  • Sc scandium
  • the multilayer structure is selected from the group comprising stacks of layers of tungsten and silicon (W/Si) , tungsten and boron carbide (W/B 4 C) , molybdenum and boron carbide (M0/B 4 C) , lanthanum and boron carbide (La/B 4 C) , chromium and carbon (Cr/C) , iron and scandium (Fe/Sc), chromium and scandium (Cr/Sc) , nickel and carbon (Ni/C) and nickel vanadium and carbon (NiV/C)
  • a multilayer structure comprising a stack of layers of lanthanum and boron carbide (La B4C) the layers of lanthanum and boron carbide are separated by layers of lanthanum boride (LaB) , these layers functioning as diffusion barrier.
  • La B4C lanthanum and boron carbide
  • an optical element becomes available which can be applied for wavelength selection, focusing and collimation of radiation in the wavelength range between 0.1 nm and 100 nm with an efficiency which is not achievable with a prior art
  • FIG. 1 shows a schematic representation of the application of an LMAG structure 1 according to the invention as monochromator .
  • LMAG structure 1 is formed by a substrate 2, for instance of Si0 2 , having thereon a
  • a beam of XUV radiation (represented by arrow 5) with a wavelength ⁇ 0 is incident upon the surface of LMAG-structure 1 at an angle ⁇ > to the surface of LMAG-structure 1.
  • the incident beam is diffracted by LMAG-structure 1 in an exiting zeroth order beam I 0 , first order beams Ii, I-i, second order beams I2, I-2 and higher order beams (not shown) . It has been found that using an LMAG structure 1
  • a monochromator can be provided which has a markedly lower dispersion (higher resolution) than with a flat, otherwise identical multilayer structure without lateral structure, wherein the reflectivity of the LMAG structure decreases to only slight extent compared to the reflectivity of the flat multilayer structure.
  • An LMAG structure 1 according to fig. 1 is constructed from a periodic stack of 150 layers 3 consisting of Cr (layer thickness 2.125 nm, roughness 0.312 nm) and layers 4
  • An LMAG structure 1 according to fig. 1 is constructed from a periodic stack of 400 layers 3 consisting of W (layer thickness 0.715 nm, roughness 0.248 nm) and layers 4

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Method for manufacturing a multilayer structure with a lateral pattern, in particular of an optical grating for application in an optical device for electromagnetic radiation with a wavelength in the wavelength range between 0.1 nm and 100 nm, comprising the steps of (i) providing a multilayer structure, and (ii) arranging a lateral three-dimensional pattern in the multilayer structure, wherein step (ii) of arranging the lateral pattern is performed by means of a method for nano-imprint lithography (NIL), and BF and LMAG structures manufactured according to this method.

Description

METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE WITH A LATERAL PATTERN FOR APPLICATION IN THE XUV WAVELENGTH RANGE, AND BF AND LMAG STRUCTURES MANUFACTURED ACCORDING TO THIS METHOD
The invention relates to a method for manufacturing a multilayer structure with a lateral pattern, in particular of an optical grating for application in an optical device for electromagnetic radiation with a wavelength in the wavelength range between 0.1 nro and 100 nm, comprising the steps of (i) providing a multilayer structure, and (ii) arranging a
lateral pattern in the multilayer structure.
The wavelength range between 0.1 nm and 10 m comprises the hard X-ray range {wavelength between 0.1 nm and 10 nm) and the so-called XUV range {wavelength between 10 nm and 100 nm) which includes the range around a wavelength of 13.5 nm, referred to in literature as EUV radiation, as well as
radiation in the soft X-ray range of the electromagnetic spectrum.
Such an optical grating is for instance applied in the production of semiconductor circuits within the technical field of nanolithography .
A particular example of such an optical grating is a so- called nano-Bragg-Fresnel (BF) structure, which forms a combination of a reflective optical element, a Bragg
structure, and a diffractive optical element, a Fresnel structure .
Another example of such an optical grating is a lamellar multilayer amplitude grating (LMAG) structure, which is applied in a monochromator for spectroscopic analysis in the XUV wavelength range.
It is known to manufacture BF structures and LMAG
structures according to per se known methods, such as
electron beam (EB) lithography and deep ultraviolet (DUV) lithography. The known methods have serious drawbacks in the serial production of large arrays of nanostructures with dimensions on nanometre scale.
EB lithography is relatively expensive and time-consuming and, as a consequence of so-called proximity effects and parameter drift during exposure to the electron beam, can produce results with a poor reproducibility.
DOV photolithography encounters problems of a fundamental nature at resolution levels in the structure to be
manufactured of lower than 50 nm. Furthermore, DUV
photolithography is only cost-effective in mass production on very large scale.
Both methods have the drawback that the width of a lamella in a periodic lateral pattern amounts to a minimum of several hundred nanometres, while the period amounts to at least one pm.
It is an object of the invention to propose a method for manufacturing a multilayer structure with characteristic dimensions smaller than 50 nm in rapid, reproducible and cost-effective manner.
It is a particular object to propose such a method for manufacturing a nano-BF structure or a nano-LMAG structure.
These objectives are realized, and other advantages gained, with a method of the type stated in the preamble, wherein according to the invention step (ii) of arranging the lateral pattern is performed by means of a method for nano- imprint lithography (NIL) .
The method for nano-imprint lithography (NIL) for instance comprises at least the steps of (a) providing a stamp with a stamp pattern corresponding to the lateral three-dimensional pattern to be arranged, (b) applying a layer of a curable resist material to the multilayer
structure, (c) arranging the stamp pattern, using the stamp, in the layer of resist material applied according to step (b) , and curing this material, and (d) removing from the multilayer structure material not, or at least substantially not covered by resist material in accordance with the stamp pattern while forming the lateral three-dimensional pattern in the multilayer structure.
In an embodiment a metal layer is deposited, prior to step (b) or following step {c) , onto the multilayer structure which is flat or provided with a lateral pattern, and is subsequently applied as etching mask.
The stamp to be provided according to the invention is for instance manufactured from Si or S1O2 (quartz) , in which the stamp pattern is arranged in accordance with a per se known method, for instance by means of electron beam
lithography (EBL) or laser interference lithography.
After removal of material from the multilayer structure and forming of the lateral three-dimensional pattern in the multilayer structure in step (d) , the layer of resist material is removed using a solvent, and the multilayer structure provided with a three-dimensional pattern can be subjected to a subsequent process step.
The removal of material in step (d) is for instance performed in accordance with a method for reactive ion etching (RIE) , by means of an inductively coupled plasma (ICP) or according to a Bosch-type etching method.
Depending on the specifications of the multilayer structure to be manufactured, according to embodiments of the method the lateral three-dimensional pattern to be formed in the multilayer structure in step (d) is given a parallel, widening wedge-shaped or narrowing wedge-shaped form from the surface of the multilayer structure.
The resist material to be applied according to step (b) is preferably a UV-curable plastic which in cured state has a relatively low viscosity, for instance a polymethyl
methacrylate (PMMA) .
Depending on the specifications of the multilayer structure to be manufactured, in an embodiment of a method according to the invention step (ii) of arranging the lateral pattern is followed by step (iii) of applying a cover layer over the three-dimensional pattern.
The invention also relates to a multilayer structure with a periodic lateral pattern manufactured according to the above described method, wherein the period is smaller than 1 μκι.
The invention also relates to a BF structure manufactured according to the above described method, wherein the
multilayer structure comprises a stack of layers of a first material from a first group comprising carbon (C) and silicon (Si) and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements.
In an embodiment the layers of the second material are selected from the group of transition elements comprising cobalt (Co) , nickel (Ni) , molybdenum (Mo) , tungsten (W) , rhenium (Re) and iridium (Ir) .
Using a BF structure according to the invention an optical element becomes available which can be applied for wavelength selection, focusing and collimation of radiation in the wavelength range between 0.1 nm and 100 nm with an efficiency which is not achievable with a prior art
multilayer structure without lateral pattern.
The invention further relates to an LMAG structure manufactured according to the above described method, wherein the multilayer structure comprises a stack of layers of a first material from a first group comprising boron (B), boron carbide (B4C) , carbon (C) , silicon (Si) and scandium (Sc) , and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements. In an embodiment of an LMAG structure according to the invention the multilayer structure is selected from the group comprising stacks of layers of tungsten and silicon (W/Si) , tungsten and boron carbide (W/B4C) , molybdenum and boron carbide (M0/B4C) , lanthanum and boron carbide (La/B4C) , chromium and carbon (Cr/C) , iron and scandium (Fe/Sc), chromium and scandium (Cr/Sc) , nickel and carbon (Ni/C) and nickel vanadium and carbon (NiV/C)
In an embodiment of a multilayer structure comprising a stack of layers of lanthanum and boron carbide (La B4C) the layers of lanthanum and boron carbide are separated by layers of lanthanum boride (LaB) , these layers functioning as diffusion barrier.
Using an LMAG structure according to the invention an optical element becomes available which can be applied for wavelength selection, focusing and collimation of radiation in the wavelength range between 0.1 nm and 100 nm with an efficiency which is not achievable with a prior art
multilayer structure without lateral pattern.
The invention will be elucidated hereinbelow on the basis of exemplary embodiments, with reference to the drawing.
In the drawing Fig. 1 shows a schematic representation of the application of an LMAG structure 1 according to the invention as monochromator . LMAG structure 1 is formed by a substrate 2, for instance of Si02, having thereon a
multilayer structure of thin layers 3, 4 stacked on each other with a layer period d, wherein according to the above described method a periodic lateral structure is arranged with a lateral period D and a line width TD. A beam of XUV radiation (represented by arrow 5) with a wavelength λ0 is incident upon the surface of LMAG-structure 1 at an angle φ<> to the surface of LMAG-structure 1. The incident beam is diffracted by LMAG-structure 1 in an exiting zeroth order beam I0, first order beams Ii, I-i, second order beams I2, I-2 and higher order beams (not shown) . It has been found that using an LMAG structure 1
according to the invention a monochromator can be provided which has a markedly lower dispersion (higher resolution) than with a flat, otherwise identical multilayer structure without lateral structure, wherein the reflectivity of the LMAG structure decreases to only slight extent compared to the reflectivity of the flat multilayer structure.
Example 1
An LMAG structure 1 according to fig. 1 is constructed from a periodic stack of 120 layers 3 consisting of La (layer thickness 3.13 nm, roughness 0,38 ran) and layers 4 consisting of B4C (layer thickness 5.05 nm, roughness 0.50 nm) , with a lateral periodicity D = 500 nm and a line width coefficient Γ = 0.20, on a substrate 2 of Si. It is found that a beam of XUV radiation with a wavelength λο = 6.7 nm, which is
incident at an angle <p0 upon the surface of LMAG structure 1, is reflected in zeroth order with a dispersion amounting to a factor 0.24 of the dispersion realized with an otherwise identical flat multilayer structure without lateral
structure, wherein the reflectivity decreases by only 11% compared to this flat multilayer structure.
Example 2
An LMAG structure 1 according to fig. 1 is constructed from a periodic stack of 150 layers 3 consisting of Cr (layer thickness 2.125 nm, roughness 0.312 nm) and layers 4
consisting of C (layer thickness 4.048 nm, roughness 0.338 nm) , with a lateral periodicity D = 300 nm and a line width coefficient Γ = 0.33, on a substrate 2 of Si. It is found that a beam of XUV radiation with a wavelength λ0 = 4.5 nm, which is incident at an angle <o upon the surface of LMAG structure 1, is reflected in zeroth order with a dispersion amounting to a factor 0.34 of the dispersion realized with an otherwise identical flat multilayer structure without lateral structure, wherein the reflectivity decreases by only 5% compared to this flat multilayer structure. Example 3
An LMAG structure 1 according to fig. 1 is constructed from a periodic stack of 400 layers 3 consisting of W (layer thickness 0.715 nm, roughness 0.248 nm) and layers 4
consisting of Si {layer thickness 1.185 nm, roughness 0.384 nm) , with a lateral periodicity D = 400 nm and a line width coefficient Γ = 0.25, on a substrate 2 of Si. A cover layer of S1O2 with a thickness of 2 nm is applied to the structure (not shown in fig. 1) . It is found that a beam of XOV radiation with a wavelength λ0 = 2.4 nm, which is incident at an angle <p0 upon the surface of LMAG structure 1, is
reflected in zeroth order with a dispersion amounting to a factor 0.25 of the dispersion realized with an otherwise identical flat multilayer structure without lateral
structure, wherein the reflectivity decreases by only 15% compared to this flat multilayer structure.

Claims

1. Method for manufacturing a multilayer structure with a lateral pattern, in particular of an optical grating for application in an optical device for electromagnetic
radiation with a wavelength in the wavelength range between 0.1 nm and 100 ran, comprising the steps of
(i) providing a multilayer structure, and
{ii) arranging a lateral three-dimensional pattern in the multilayer structure, characterized in that
step (ii) of arranging the lateral pattern is performed by means of a method for nano-imprint lithography (NIL) .
2. Method as claimed in claim 1, wherein the method for nano-imprint lithography (NIL) comprises at least the steps of
(a) providing a stamp with a stamp pattern corresponding to the lateral three-dimensional pattern to be arranged,
(b) applying a layer of a curable resist material to the multilayer structure,
(c) arranging the stamp pattern, using the stamp, in the layer of resist material applied according to step (b) , and curing this material, and
(d) removing from the multilayer structure material not, or at least substantially not covered by resist material in accordance with the stamp pattern while forming the lateral three-dimensional pattern in the multilayer structure.
3. Method as claimed in claim 2, wherein the removal of material according to step (d) is performed in accordance with a method for reactive ion etching (RIE) .
4. Method as claimed in claim 2, wherein the removal of material in step (d) is performed by means of an inductively coupled plasma (ICP) .
5. Method as claimed in claim 2, wherein the removal of material in step (d) is performed in accordance with a Bosch- type etching method.
6. Method as claimed in claim 2, wherein a form widening in wedge-shape from the surface of the multilayer structure is given to the lateral three-dimensional pattern to be formed in the multilayer structure in step (d) .
7. Method as claimed in claim 2, wherein a form narrowing in wedge-shape from the surface of the multilayer structure is given to the lateral three-dimensional pattern to be formed in the multilayer structure in step (d) .
8. Method as claimed in any of the claims 2-7, wherein the resist material to be applied according to step (b) is a UV-curable plastic which in cured state has a relatively low viscosity.
9. Method as claimed in any of the foregoing claims, wherein step (ii) of arranging the lateral pattern is followed by step (iii) of applying a cover layer over the three-dimensional pattern.
10. Multilayer structure with a periodic lateral pattern manufactured according to a method as claimed in any of the claims 1-9, characterized in that the period is smaller than 1 μκι.
11. BF structure manufactured according to a method as claimed in any of the claims 1-9, characterized in that the multilayer structure comprises a stack of layers of a first material from a first group comprising carbon (C) and silicon (Si) and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements.
12. BF structure as claimed in claim 11, characterized in that the layers of the second material are selected from the group of transition elements comprising cobalt (Co) , nickel (Ni), molybdenum (Mo), tungsten (W) , rhenium (Re) and iridium (Ir) .
13. LMA.G structure manufactured according to a method as claimed in any of the claims 1-9, characterized in that the multilayer structure comprises a stack of layers of a first material from a first group comprising boron (B) , boron carbide (B4C) , carbon (C) , silicon (Si) and scandium (Sc), and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements.
14. LMA.G structure as claimed in claim 13, characterized in that the multilayer structure is selected from the group comprising a stack of layers of tungsten and silicon (W/Si), tungsten and boron carbide (W/B^C) , molybdenum and boron carbide (M0/B4C) , lanthanum and boron carbide (La/B C) , chromium and carbon (Cr/C) , iron and scandium (Fe/Sc) , chromium and scandium (Cr/Sc) , nickel and carbon (Ni/C) and nickel vanadium and carbon (NiV/C) .
15. LMAG structure as claimed in claim 14, wherein the multilayer structure comprises a stack of layers of lanthanum and boron carbide (La/B4C) , characterized in that the layers of lanthanum and boron carbide are separated by layers of lanthanum boride (LaB) .
EP10796182.3A 2009-12-11 2010-12-08 Method for manufacturing a multilayer structure with a lateral pattern for application in the xuv wavelength range, and bf and lmag structures manufactured according to this method Active EP2510397B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2003950A NL2003950C2 (en) 2009-12-11 2009-12-11 METHOD FOR MANUFACTURING A MULTI-LAYER STRUCTURE WITH A LATERAL PATTERN FOR USE IN THE XUV WAVE LENGTH AREA AND BT AND LMAG STRUCTURES MANUFACTURED BY THIS METHOD.
PCT/NL2010/050832 WO2011071380A1 (en) 2009-12-11 2010-12-08 Method for manufacturing a multilayer structure with a lateral pattern for application in the xuv wavelength range, and bf and lmag structures manufactured according to this method

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EP2510397A1 true EP2510397A1 (en) 2012-10-17
EP2510397B1 EP2510397B1 (en) 2015-01-14

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WO (1) WO2011071380A1 (en)

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