EP2483938A2 - Composant électronique, en particulier composant optique ou optoélectronique, et son procédé de production - Google Patents

Composant électronique, en particulier composant optique ou optoélectronique, et son procédé de production

Info

Publication number
EP2483938A2
EP2483938A2 EP10759851A EP10759851A EP2483938A2 EP 2483938 A2 EP2483938 A2 EP 2483938A2 EP 10759851 A EP10759851 A EP 10759851A EP 10759851 A EP10759851 A EP 10759851A EP 2483938 A2 EP2483938 A2 EP 2483938A2
Authority
EP
European Patent Office
Prior art keywords
particles
component
core
sheath
thermoplastic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10759851A
Other languages
German (de)
English (en)
Inventor
Klaus Hoehn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2483938A2 publication Critical patent/EP2483938A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials

Definitions

  • An electronic, in particular an optical or optoelectronic, component according to claim 1 is specified.
  • Optoelectronic components is that ever brighter radiation sources are used with higher operating temperatures and shorter wavelengths, and thus damage to the housing can be done by, for example, yellowing and Kreidungspreheaten. This can be done by, for example, yellowing and Kreidungspreheaten. This can be done by, for example, yellowing and Kreidungspreheaten. This can be done by, for example, yellowing and Kreidungspreheaten. This can
  • the reflector are damaged, and thus important optical properties such as the operating life of the device or the light output significantly
  • An object of embodiments of the invention is to provide an electronic device having improved yellowing performance.
  • An optoelectronic device comprising a component comprising a thermoplastic, which particles
  • the component may also consist of the thermoplastic that has the particles.
  • the core may comprise elemental aluminum or from it
  • Thermoplastics exhibit due to their thermomechanical properties
  • Characteristics good media resistance, as well as a sufficient temperature and dimensional stability. Furthermore, they have a good crack and crack resistance at Zykel- and Lötbad-stress of the components. Furthermore, due to the low cost is an economic
  • Characteristics They are non-toxic, cost-effective, corrosion-resistant and media-resistant. They have a high thermal conductivity of about 220 W / mK. If they have a shell (e.g., an oxide layer on the surface) they will simultaneously have good electrical insulating properties due to this shell. The good metallic reflectivity and the simultaneously high absorption capacity in a broad wavelength range (UV to IR) make it possible, above all, to use the particles in components for optical or optoelectronic components.
  • the invention in this application is representative of electronic components with a particular attention optical or optoelectronic devices described.
  • thermoplastic which comprises these particles with core and shell, has improved adhesion to, for example, metallic ones
  • the heat loss incurred during operation of the component can be dissipated more efficiently, whereby the
  • Component aging is reduced in the housing material. As a result, the operating temperature of the component can be increased. Furthermore, the device at higher
  • the envelope is disposed directly on the surface of the core.
  • the core comprising aluminum is directly surrounded by the shell.
  • the sheath in one embodiment is fixedly connected to the surface of the core.
  • the shell is inseparably bonded to the surface, e.g. if the shell by a chemical reaction in particular a
  • Solid state reaction such as the formation of a Oxide layer is formed or produced. It is thus preferably a solid material of which the shell is made.
  • the shell comprises an oxide, a nitride or an oxynitride.
  • Sheaths of these materials have a good electrical insulating property combined with good thermal conductivity. They are also non-toxic and compared to a metal significantly more corrosion-resistant and media-resistant.
  • the sheath also comprises aluminum, for example as A10 x , A1N x ,
  • the shell has a thickness of greater than 10 nm.
  • the shell has a thickness of less than 100 ⁇ .
  • a thickness of the shell below 100 ⁇ already has the advantageous properties described above.
  • a thickness of ⁇ 100 ⁇ makes it possible to keep the particle size in itself small, which is important, inter alia, for the optical
  • the thickness of the shell is preferably in a range of 50 nm to 25 ⁇ .
  • particles with a smooth surface used, whereas for a diffuse reflection preferably particles are used with a rough surface.
  • the shell electrically insulates the core.
  • Thermoplastics which can be used for a component which is used for an optoelectronic component.
  • the component may, for example, also be a potting component, which may be provided on electrically conductive, non-insulated components of an optoelectronic component, such as, for example
  • Thermoplastics is made is prevented.
  • the shell has at least partially on its surface
  • the coating may be, for example, a coating of a grinding aid.
  • the grinding aid may be, for example, an animal or vegetable
  • Lubricants act, as well as organic phosphonic acids or phosphonic acid esters. In the animal and vegetable
  • Lubricants can be, for example, palmitic, stearic or oleic acid and their salts with Zn, Ca or Mg.
  • the type and concentration of the lubricant can be chosen so that the particles arrange on introduction into the thermoplastic and in the subsequent production of the component on the surface of the component and less strongly in the interior of the component and provide the desired reflective properties.
  • the type and concentration of the lubricant can be chosen so that the particles accumulate, especially in the interior of the component and thus provide above all good thermal conductivity.
  • the thermal conductivity introduced into the component so these preferably have a lower concentration of grinding additive in the coating. Furthermore, these particles preferably have a thin shell. This has the consequence that it comes in the production of a cold welding of the particles at the contact points.
  • the particles have an average particle size, measured as ds o value, of 10 nm to 50 ⁇ .
  • the particles preferably have an average particle size, measured as ds o value, between 10 nm and 20 ⁇ m.
  • the size, shape and roughness of the particles, for example, the reflectivity can be optimized.
  • the size of the particles can influence the visual impression of the component. For example, using large particles and high concentration
  • the average particle size can hereby means
  • the concentration of the particles in the thermoplastic is preferably between 0.001 to 1% by weight. Due to the nature and concentration of the particles in the thermoplastic, the
  • Reflectance of the component, which comprises the thermoplastic are controlled.
  • the component which comprises the thermoplastic
  • Component surface are given a metallic character.
  • the concentration of the particles based on the thermoplastic is 10 to 75% by weight.
  • the optoelectronic component may, for example, be a component with a cooling function.
  • This preferably comprises multimodal particles in flake form. This can be as high as possible
  • the concentration of the particles based on the thermoplastic is 0.001 to 10% by weight.
  • the optical or optoelectronic component can be, for example, a component with good reflective properties.
  • This preferably comprises spherical particles with a smooth
  • the device when the reflection should be directed.
  • the device if the reflection is to be diffuse, the device preferably comprises particles with an irregular, rough surface. In both cases, the particles accumulate on the surface.
  • the core has an aluminum content of at least 99 mol%.
  • the core has an aluminum content of 100 mol%, which means that the core is completely made of aluminum and possibly small amounts more commonly
  • Aluminum also has a low density compared to other metals, with the result that the particles are quite light.
  • the particles have a spherical shape, a slightly ellipsoidal shape or a shape similar to these shapes. In the weakly ellipsoidal form there is a radius ratio of ⁇ 1.5.
  • the particles have a flake or a highly ellipsoidal shape
  • the particles have a fiber shape.
  • the particles preferably have a mean grain size, measured as d 50, of from 0.1 .mu.m to 200 .mu.m.
  • d 50 mean grain size
  • Particles of a form as well as a mixture of particles of different shapes are used.
  • both a monomodal distribution can be present, d. H. the particles are of similar size, as well as a multi-modal form, i. H. the particles have a marked difference in their size.
  • Reflectance be controlled so that it is a directional or diffuse reflection.
  • a diffuse reflection for example, the light mixing of radiations of different wavelengths can be improved on the housing wall surfaces.
  • the particles have a flake shape, fiber shape or a highly ellipsoidal shape
  • Concentration of the particles based on the thermoplastic preferably 0.1 to 40% by weight, with the range of 1.0 to 30% by weight being particularly preferred.
  • the core comprises or consists of an aluminum alloy.
  • the alloy may include, for example, Si and / or Mg. Preferably, it comprises Si. Such alloying components stabilize the core of the particles.
  • the concentration of the alloying ingredient is preferably in weight percent based on the amount of aluminum used in the range of 10 ppm to 0.9% by weight.
  • thermoplastic additionally comprises one or more additives selected from: glass fibers, glass fabric, glass powder,
  • White pigments such as Ti0 2 , CaC0 3 , BaS0 4 , A1 2 0 3 , Si0 2 , Zr0 2 , light converging substances, colorants, additives such as wetting agents, stabilizers, inorganic and metallic nanoparticles such as ZnO, ZrO 2 , Au, Ag, Ti, organophosphorus flame retardants.
  • thermoplastic is a plastic selected from polyaryl ether, polyphenyl ether, polysulfone,
  • polyamides the polyphthalamides are preferred.
  • the polyamide can in this case additionally with glass fibers,
  • the component is a housing.
  • This housing may be formed, for example, as a reflector.
  • the housing can, for example, inside a
  • the electronic especially optical or
  • Optoelectronic, component can be used for example in one of the following areas: automotive sector, cooling media with optical functions, light housing and frame material in photovoltaic systems, medical or
  • the component can be, for example, a headlight, a light module can be a signal system or a large-area light-design element or can be a component thereof.
  • a light module can be a signal system or a large-area light-design element or can be a component thereof.
  • thermoplastic which has the particles interesting.
  • the electronic especially optical or
  • Optoelectronic device can also be used for modules and systems with increased reliability, as well as used under severe operating conditions. Or it can be extended for new applications Function area can be used, such as housing for SMD-capable LEDs.
  • the present invention also relates to the use of a thermoplastic described above for the production of a
  • Component for an electronic in particular for a
  • optical or optoelectronic device optical or optoelectronic device.
  • thermoplastic which comprises the particles
  • the described thermoplastic can be used, for example, for housings and / or reflectors in headlamps, light modules, signal systems and large-area
  • Light design element can be used.
  • thermoplastic includes.
  • the described thermoplastic having the particles is suitable as a frame material in photovoltaic applications.
  • thermoplastic which has the particles, can be used as a thermoplastically processable composite material
  • Invention also a method for producing a component for an electronic, in particular for an optical or optoelectronic device.
  • Component for an electronic in particular for a
  • optical or optoelectronic device comprises this the method steps: providing a thermoplastic as process step A), incorporating particles which comprise or consist of a core and a shell, wherein the shell is arranged on the surface of the core and wherein the core comprises aluminum, as process step B) and forming a Component as process step C).
  • the particles from process step B) are prepared in an upstream process which comprises the following steps:
  • this upstream
  • this upstream
  • the process step d) can in this case before or after the
  • Process step c) take place.
  • the shell can also form between the core and a coating arranged thereon.
  • the coating can be partially removed by the conditioning.
  • the aluminum which is, for example, high-purity aluminum with a content of> 99 mol%, is melted at a temperature of about 700 ° C. in process step a).
  • the molten aluminum is atomized at high pressure with air or inert gas (nitrogen, Ar, He).
  • the atomization system and the atomization parameters have an influence on the size and shape of the cores. As a result, it is also possible to indirectly influence the thickness of the subsequent casing, for example.
  • the cores are ground in the subsequent process step c).
  • the grinding may be, for example, a wet grinding in hydrocarbons, white spirit, petroleum ether or toluene. This can be done, for example, at a temperature up to 70 ° C.
  • the grinding can be carried out using, for example,
  • spherical grinding media of a defined size and quantity.
  • grinding aids such as waxes, oil, stearic or palmitic acid can be added.
  • the particle shape depends very much on the introduced grinding energy and the hardness of the
  • the grinding aids are completely or partially removed by washing with organic solvents.
  • the conditioning of the cores in process step d) can be carried out, for example, in an oven at a temperature of 400 ° C.
  • the conditioning can take place over a period of, for example, 1 to 12 hours.
  • the atmosphere used here can be, for example, air, oxygen, nitrogen or argon.
  • Other surface modifications such as passivations can also be made in the plasma (oxygen, air, argon and mixtures thereof). In this case, the plasma power and the duration of the plasma treatment
  • the particles are dried in a process step e) before process step B) and after process step d).
  • the drying can be carried out for example over a period of 1 to 2 hours at a temperature of 120 ° C.
  • a vacuum ⁇ 13 mbar
  • thermoplastic Processing of the thermoplastic the following:
  • Process steps Preparation, drying, homogenization of raw materials and shaping. Any of the steps can
  • the inert gas atmosphere may in this case comprise nitrogen, argon or helium and is useful, for example, if the formation of a shell which comprises A10 x is undesirable in this process step.
  • the process may be additional wet chemical or
  • thermoplastic described above can be used, for example, for cooling in optical or optoelectronic components.
  • thermoplastic can be used for SMD components which can be used, for example, in the automotive industry.
  • thermoplastic may further be used for the above-described thermoplastic.
  • Minimizing corrosion can be used in, for example, leadframes. These may be, for example, leadframes which are silver plated. These can be potted, for example, with silicone or silicone hybrids. Particularly suitable for this purpose are thermoplastics which comprise particles which have a shell of ⁇ 5 ⁇ m,
  • ⁇ 1 ym preferably ⁇ 1 ym. These can act as aluminum sources which can release Al 3+ ions.
  • Figures la and lb each show a schematic
  • FIGS. 2a and 2b each show a schematic
  • FIG. 1a shows a schematic cross section through a particle 1. This consists of a core 2 and a shell 3, which directly on the surface of the core. 2
  • FIG. 1b shows a schematic cross section through a further embodiment of the particle 1. This comprises in addition, compared with the particle shown in FIG. 1 a, a coating 4, which is arranged directly on the surface of the shell 3.
  • Figure 2a shows a schematic cross section of a
  • Embodiment of an optoelectronic component This comprises a component 6, which is made of a thermoplastic 5.
  • the thermoplastic 5 comprises particles 1.
  • the component 6 is formed in this embodiment as a reflector. Inside the reflector tray is a
  • Radiation source 7 is arranged.
  • the radiation source 7 may be, for example, an inorganic LED or an organic LED (OLED).
  • the radiation source 7 is potted with a potting 8, which at the
  • Radiation exit surface forms a lens 9.
  • the radiation emitted by the radiation source 7 can of the
  • Reflector are reflected, whereby the luminous efficacy of the optoelectronic component is increased.
  • the particles preferably have a large surface area, as is the case in the flake form.
  • the LED comprises a semiconductor which forms a diode.
  • LEDs are often called I I I / V semiconductors, i. they are composed of elements of the 3rd and 5th group of the periodic table. Furthermore, the LED includes an anode, which itself
  • the anode can be electrically conductive via a bond wire be connected to the lead frame on which the LED can be arranged.
  • An OLED comprises a layer stack comprising an anode and a cathode.
  • Voltage holes or electrodes delivered which migrate in the direction of the other electrode.
  • the charge carriers migrate here, for example, only by holes or
  • the excitons can be phosphors that are found in the
  • the OLED may comprise an organic functional layer, which may be, for example, a
  • charge carrier transporting layer or a combination thereof.
  • FIG. 2b shows, in a schematic cross section, a further embodiment of an optoelectronic component. This includes as well as the one shown in FIG. 2a
  • a component 6 which consists of a
  • Thermoplastics 5 is made.
  • the thermoplastic 5 comprises particles 1.
  • the component 6 is a reflector
  • Radiation source 7 is arranged. At the radiation source 7 it may also be, for example, an inorganic LED or an organic LED (OLED).
  • the radiation source 7 it may also be, for example, an inorganic LED or an organic LED (OLED).
  • Radiation source 7 is potted with a potting 8, which forms a lens 9 at the radiation exit surface.
  • a potting 8 which forms a lens 9 at the radiation exit surface.
  • the particles 1 are arranged on the surface of the component 6 in this embodiment.
  • the surface has a particularly high reflectivity.
  • the thermoplastic preferably comprises spherical particles having a smooth surface when the reflection is to be directed.
  • the thermoplastic preferably comprises particles having an irregular, rough surface.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacturing Of Micro-Capsules (AREA)

Abstract

L'invention concerne un composant électronique, en particulier un composant optique ou optoélectronique, comprenant un élément à base d'un thermoplaste comportant des particules qui comprennent un noyau et une enveloppe. Selon l'invention, l'enveloppe est placée sur la surface du noyau et ce dernier contient de l'aluminium.
EP10759851A 2009-09-30 2010-09-20 Composant électronique, en particulier composant optique ou optoélectronique, et son procédé de production Withdrawn EP2483938A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009047877 2009-09-30
DE102009055765A DE102009055765A1 (de) 2009-09-30 2009-11-25 Optisches oder optoelektronisches Bauelement und Verfahren zu dessen Herstellung
PCT/EP2010/063813 WO2011039071A2 (fr) 2009-09-30 2010-09-20 Composant électronique, en particulier composant optique ou optoélectronique, et son procédé de production

Publications (1)

Publication Number Publication Date
EP2483938A2 true EP2483938A2 (fr) 2012-08-08

Family

ID=43662662

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10759851A Withdrawn EP2483938A2 (fr) 2009-09-30 2010-09-20 Composant électronique, en particulier composant optique ou optoélectronique, et son procédé de production

Country Status (7)

Country Link
US (1) US20120241694A1 (fr)
EP (1) EP2483938A2 (fr)
JP (1) JP2013506977A (fr)
KR (1) KR20120091175A (fr)
CN (1) CN102549784A (fr)
DE (1) DE102009055765A1 (fr)
WO (1) WO2011039071A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6418200B2 (ja) 2016-05-31 2018-11-07 日亜化学工業株式会社 発光装置及びその製造方法
DE102017210200A1 (de) * 2017-06-19 2018-12-20 Osram Gmbh Substrat zum aufnehmen eines optoelektronischen bauelements, optoelektronische baugruppe, verfahren zum herstellen eines substrats und verfahren zum herstellen einer optoelektronischen baugruppe
JP7078863B2 (ja) 2020-04-01 2022-06-01 日亜化学工業株式会社 発光装置及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149282A (en) * 1976-06-08 1977-12-12 Asahi Chem Ind Co Ltd Aq. aluminium paste compositions
JPH0493362A (ja) * 1990-08-10 1992-03-26 Toshiba Ceramics Co Ltd 電子部品封止用充填剤およびその製造方法
US5627107A (en) * 1992-06-08 1997-05-06 The Dow Chemical Company Semiconductor devices encapsulated with aluminum nitride-filled resins and process for preparing same
US5907190A (en) * 1994-11-24 1999-05-25 Dow Corning Toray Silicone Co., Ltd. Semiconductor device having a cured silicone coating with non uniformly dispersed filler
US5601874A (en) * 1994-12-08 1997-02-11 The Dow Chemical Company Method of making moisture resistant aluminum nitride powder and powder produced thereby
EP0798393B1 (fr) * 1996-03-29 2001-11-21 Hitachi Metals, Ltd. Procédé de préparation d'un alliage composite en aluminium à faible coefficient de dilatation thermique et à haute conductivité thermique
US6737681B2 (en) * 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element
DE10310844B4 (de) * 2003-03-10 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement mit einem Gehäusekörper aus Kunststoff
EP1735845A2 (fr) * 2004-04-16 2006-12-27 Lucea AG Boitier pour puce led et source lumineuse
DE102004064150B4 (de) * 2004-06-29 2010-04-29 Osram Opto Semiconductors Gmbh Elektronisches Bauteil mit Gehäuse mit leitfähiger Beschichtung zum ESD-Schutz
JP2006036931A (ja) * 2004-07-27 2006-02-09 Three M Innovative Properties Co 熱伝導性組成物
JP4991173B2 (ja) * 2005-04-27 2012-08-01 京セラ株式会社 発光素子搭載用基体ならびにこれを用いた発光装置
JP2009135484A (ja) * 2007-11-09 2009-06-18 Hitachi Chem Co Ltd 光半導体装置
JP2009263640A (ja) * 2008-04-04 2009-11-12 Sumitomo Chemical Co Ltd 熱伝導性樹脂組成物及びその用途

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2011039071A2 *

Also Published As

Publication number Publication date
WO2011039071A2 (fr) 2011-04-07
JP2013506977A (ja) 2013-02-28
WO2011039071A3 (fr) 2011-08-25
CN102549784A (zh) 2012-07-04
US20120241694A1 (en) 2012-09-27
DE102009055765A1 (de) 2011-03-31
KR20120091175A (ko) 2012-08-17

Similar Documents

Publication Publication Date Title
EP1728280B1 (fr) Composant optoélectronique pourvue d'un corps de boîtier en plusieurs parties
EP1794817B1 (fr) Composant optoelectronique et boitier pour composant optoelectronique
WO2011104364A1 (fr) Composant émettant un rayonnement muni d'une puce semi-conductrice et d'un élément de conversion et son procédé de fabrication
DE102009025266B4 (de) Optoelektronisches Halbleiterbauteil
DE102005046450A1 (de) Optoelektronischer Halbleiterchip, Verfahren zu dessen Herstellung und optoelektronisches Bauteil
EP1597776A2 (fr) Module d'eclairage et procede de fabrication
DE102011018921B4 (de) Träger, optoelektronisches Bauelement mit Träger und Verfahren zur Herstellung dieser
DE102005042778A1 (de) Optische Festkörpervorrichtung
DE102007021905A1 (de) Leuchtvorrichtung mit Reflektor aus porösem Aluminiumoxid und seine Herstellung
WO2012140050A2 (fr) Procédé de fabrication d'un composant semi-conducteur émetteur de lumière et composant semi-conducteur émetteur de lumière
DE102007046348A1 (de) Strahlungsemittierendes Bauelement mit Glasabdeckung und Verfahren zu dessen Herstellung
DE102013106858A1 (de) Substrat für ein LED-Modul und Verfahren zu dessen Herstellung
DE112017003086T5 (de) LED-Package
WO2014139834A1 (fr) Composant optoélectronique et procédé de fabrication d'un composant optoélectronique
WO2014114524A1 (fr) Puce semi-conductrice optoélectronique encapsulée avec une couche réalisée par ald et procédé de fabrication correspondant
WO2011039071A2 (fr) Composant électronique, en particulier composant optique ou optoélectronique, et son procédé de production
EP2327110B1 (fr) Composant optoelectronique et son procédé de production
DE102015101070A1 (de) Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
WO2011141383A1 (fr) Couche réfléchissante en argent résistant à la corrosion pour un composant optoélectronique, composant correspondant et procédé de fabrication
WO2013092511A1 (fr) Composant optoélectronique à semi-conducteur
DE112014002703B4 (de) Optoelektronisches Halbleiterbauteil
DE102015107591B4 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102017210200A1 (de) Substrat zum aufnehmen eines optoelektronischen bauelements, optoelektronische baugruppe, verfahren zum herstellen eines substrats und verfahren zum herstellen einer optoelektronischen baugruppe
WO2012072519A1 (fr) Composant opto-électronique et son procédé de production
DE102022117559A1 (de) Ultraviolett(UV)-Lichtquelle und Herstellungsverfahren derselben

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20120202

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20150401