EP2456625B1 - Method for manufacturing a device with a display element - Google Patents

Method for manufacturing a device with a display element Download PDF

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Publication number
EP2456625B1
EP2456625B1 EP10733009.4A EP10733009A EP2456625B1 EP 2456625 B1 EP2456625 B1 EP 2456625B1 EP 10733009 A EP10733009 A EP 10733009A EP 2456625 B1 EP2456625 B1 EP 2456625B1
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EP
European Patent Office
Prior art keywords
layer
protective layer
substrate
graphical element
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP10733009.4A
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German (de)
French (fr)
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EP2456625A2 (en
Inventor
Chrystel Deguet
Alain-Marcel Rey
Thomas Signamarcheix
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication of EP2456625A2 publication Critical patent/EP2456625A2/en
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Publication of EP2456625B1 publication Critical patent/EP2456625B1/en
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44F—SPECIAL DESIGNS OR PICTURES
    • B44F1/00—Designs or pictures characterised by special or unusual light effects
    • B44F1/02—Designs or pictures characterised by special or unusual light effects produced by reflected light, e.g. matt surfaces, lustrous surfaces
    • B44F1/04—Designs or pictures characterised by special or unusual light effects produced by reflected light, e.g. matt surfaces, lustrous surfaces after passage through surface layers, e.g. pictures with mirrors on the back
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments

Definitions

  • the invention relates to a method for producing a device with a graphic element.
  • the invention makes it possible, in particular, to produce one or more devices that can be produced in a collective manner, and that includes graphic elements of microscopic and / or nanoscopic dimensions, representing for example data such as text and / or images and / or or drawings buried in one or more massive objects in the form of vignettes may include one or more transparent windows to see them.
  • the invention makes it possible, in particular, to mark an object, for example for decorative purposes and / or for purposes of identification or traceability, such as a jewel, a watch glass, a window of an equipment screen.
  • an object for example for decorative purposes and / or for purposes of identification or traceability, such as a jewel, a watch glass, a window of an equipment screen.
  • electronic a gemstone or semi-precious stone, or any object with high added value or high security requirements (vehicle safety parts or elements of the medical field such as prostheses).
  • An object of the present invention is to propose a method for producing a device with a graphic element making it possible to customize a surface, for example a flat surface, of an object by adding a buried and protected graphic element, and thus tamperproof. and which does not have the disadvantages of the prior art.
  • This method makes it possible to transfer a graphic element to an object, called a second substrate, without denaturing it, given the small thickness of the protective layer, for example between about 100 nm and 100 ⁇ m.
  • the graphic element can be produced, during step a), by etching at least the first face of the protective layer in a pattern of the graphic element.
  • the graphic element is formed by recesses made by etching in the first face of the protective layer.
  • the securing step b) may comprise a molecular bonding of the protective layer against the second substrate used in a vacuum environment.
  • Such molecular bonding makes it possible in particular to obtain a device having excellent thermal resistance.
  • the protective layer may be oxide-based, for example silicon oxide, or silicon nitride
  • the second substrate may comprise an oxide-based face, for example silicon oxide. , or silicon nitride, the protective layer and the second substrate being able to be stuck molecularly to each other, during step b), at the first face of the protective layer and said face of the second substrate.
  • the layer intended to form the graphic element may be based on a material at least partially opaque to visible light, and / or visible to infrared and / or ultraviolet light.
  • Step b) of joining may comprise a molecular bonding of the layer covering the protective layer and the graphic element against the second substrate.
  • Such molecular bonding makes it possible in particular to obtain a device having excellent thermal resistance.
  • the layer covering the protective layer and the graphic element may be based on a dielectric material.
  • the layer covering the protective layer and the graphic element may be based on oxide, for example silicon oxide, or silicon nitride
  • the second substrate may comprise an oxide-based face, for example the silicon oxide, or silicon nitride, the layer covering the protective layer and the graphic element, and the second substrate being able to be stuck together molecularly during step b), level of said face of the second substrate.
  • Step c) of uncoupling may comprise an application of a mechanical stress between the sacrificial layer and the protective layer, and / or, when the first substrate is based on an at least partially transparent material and the sacrificial layer based on at least one material capable of decomposing, a laser irradiation of the sacrificial layer through the first substrate, and / or, when the sacrificial layer is based on a fusible material, a heat treatment at a temperature greater than or equal to at the melting temperature of said fusible material, and / or an attack by a solution capable of decomposing the material of the sacrificial layer.
  • the protective layer and / or the second substrate may be based on at least one optically transparent material. Thus, it is possible to see the graphic element through the protective layer and / or through the second substrate.
  • neither the protective layer nor the second substrate is based on an optically transparent material.
  • the material of the protective layer and / or the material of the second substrate to be chosen so as to be able to read the graphic element, for example by infrared or ultraviolet, these materials being, for example, silicon. .
  • Steps a) to c) can be implemented collectively for the production of several devices with graphic elements.
  • Figures 1A to 1H represent the steps of a process of producing a device with a graphic element 100 according to a first embodiment.
  • a stack comprising a substrate 102 that may be based on a material that is transparent or not transparent to light is produced.
  • This substrate may for example be a wafer, or a wafer, of diameter for example equal to about 200 mm, for example based on semiconductor such as silicon, or glass.
  • a sacrificial layer 104 is disposed on the substrate 102 and is covered by a protective layer 106.
  • the material of the sacrificial layer 104 is chosen in order to be able subsequently to separate or separate the substrate 102 from the protective layer 106.
  • the sacrificial layer 104 is for example based on SiN x , for example If 3 N 4 .
  • the substrate 102 may be made from a transparent material such as glass in order to subsequently be able to separate the substrate 102 and the protective layer 106 by the implementation of a laser shrinkage. also called a "laser liftoff" in which the irradiation of the sacrificial layer 104 by a laser beam through the transparent substrate 102 causes a decomposition of this material, thus separating the sacrificial layer 104 from the protective layer 106.
  • the sacrificial layer 104 may be based on a fusible material, for example germanium, that is to say a material capable of melting from a certain temperature (for example 937 ° C in the case of germanium) and thus achieve the separation of the protective layer 106 relative to the substrate 102.
  • the substrate 102 may be based of a non-transparent material.
  • the sacrificial layer 104 may be based on porous silicon, which will make it possible to mechanically disassemble the sacrificial layer 104 with respect to the protective layer 106, for example by inserting a blade between the protective layer 106 and the sacrificial layer 104.
  • the sacrificial layer 104 for example based on Ge or Si 3 N 4
  • the sacrificial layer 104 can be eliminated by etching (with, for example, a solution based on H 2 O 2 in the case of a Ge-based sacrificial layer or an H 3 PO 4 -based solution in the case of a sacrificial layer based on Si 3 N 4 ), thus achieving the separation of the protective layer 106 and the substrate 102.
  • the substrate 102 may be based on a non-transparent material.
  • the protective layer 106 is for example deposited on the sacrificial layer 104 and is based, for example, on oxide (such as SiO 2 ) and / or alumina and / or diamond (such as diamond-like carbon DLC and / or nitride (such as Si 3 N 4 ) and / or resin and / or at least one dielectric.
  • the thickness of the protective layer 106 is for example between about 100 nm and 100 ⁇ m in order to protect mechanically the graphic element which will be subsequently produced at the level of the protective layer 106. In order to be able to observe this graphic element through the protective layer 106, it is possible to produce this protective layer 106 based on an optically transparent material .
  • the degree of transparency of the layer 106 may be variable.
  • the thickness and the material of the layer 106 can be chosen so that the graphic element, which will be realized later, can be visible through the transparent layer 106.
  • a layer 108, in which the graphic element is intended to be made, is disposed on an upper face 107 of the protective layer 106 which is opposite the face of the protective layer 106 in contact with the sacrificial layer 104.
  • This layer 108 may be based on any material, and in particular, when the protective layer 106 and / or the object on which the graphic element will be joined are transparent, a material having a contrast vis-à-vis the materials to be subsequently arranged on the layer 108 (in particular the elements referenced 110 and 116 on the figure 1H ) since the graphic element can be observed through the protective layer 106 and / or the transparent object. It is also possible that the material of the layer 108 is at least partially opaque at certain wavelengths.
  • the layer 108 may be metal-based.
  • the layer 108 can also be made from a material having a contrast in the wavelength range of infrared light (wavelengths between about 780 nm and 1 mm) or ultraviolet (wavelengths between about 380 nm and 10 nm).
  • the thickness of the layer 108 is, for example, between about 10 nm and 1 ⁇ m, and preferably between about 50 nm and 200 nm.
  • the layer 108 is then etched so that the remaining portions 109, or gaps or gaps formed between the etched portions of the layer 108, form the desired graphic element ( Figure 1B ).
  • This graphic element represents for example data.
  • the remaining portions 109 or spaces formed between the remaining portions have for example dimensions whose lower limit corresponds to the technological limits of the engraving techniques used.
  • the etching technique used may be chosen depending on the nature of the material of the layer 108.
  • a mask layer for example based on a mineral material, on the layer 108, to etch the mask layer according to the pattern of the graphic element, then to etch the layer 108 to through the mask made on layer 108. The mask is then deleted.
  • the graphic element by first depositing on the face 107 of the protective layer 106 a mask layer, for example based on resin.
  • This resin layer is then etched to form a mask whose pattern corresponds to the inverse pattern of the graphic element.
  • the material intended to form the graphic element for example metal or any other suitable material and for example similar to the material of the layer 108 described above, is then deposited on the face 107 of the protective layer 106 through the mask, forming thus the graphic element.
  • the resin mask is removed so as to keep on the face 107 of the protective layer 106 only the material forming the graphic element.
  • the portions of material forming the graphic element are therefore similar to the portions 109 of the layer 108 forming the graphic element represented on the Figure 1B .
  • a layer 110 As shown on the figure 1C , then depositing and planarizing, for example mechanochemical, a layer 110, or a stack of layers, based on at least one material compatible with molecular bonding which will be described later.
  • This layer 110 completely covers the remaining portions 109 of the layer 108 forming the graphic element, as well as the portions of the face 107 of the transparent layer 106 which are not covered by the remaining portions 109 of the layer 108.
  • the layer 110 is for example based on a dielectric material, and may in particular be based on oxide, for example SiO 2 .
  • the planarization makes it possible to render an upper face 112 of the layer 110 compatible, in particular as regards the roughness and topology of the surface, for the subsequent implementation of a molecular bonding of the layer 110, at the level of the face upper 112, with the object intended to receive the graphic element.
  • the layer 110 may be made so that the thickness of this layer lying above the remaining portions 109 of the layer 108 is between about 10 nm and 10 ⁇ m, and preferably between about 10 nm and 1 ⁇ m.
  • a protective layer 114 for example based on Si 3 N 4 , resin, or carbon ( figure 1D ).
  • This protective layer 114 makes it possible to protect the layers 102, 104, 106, 109 and 110 of a dry or wet etching carried out at least through this protective layer 114 for delimiting portions of these layers that will be part of the device 100.
  • This etching can also be performed through the other layers 110 and / or 106 and / or 104. In the example of figure 1D this etching is carried out through the layers 114, 110 and 106.
  • This etching step therefore allows delimiting "on the surface” the device 100 of the other devices made in parallel on the same wafer.
  • the protective layer 114 is then removed.
  • Preparation steps for the molecular bonding of the face 112 can then be implemented collectively or individually for the chip. or all the chips from the initial stack of the layers 102, 104, 106, 108 and 110.
  • These preparation steps may be chemical cleaning steps of the surface 112 by solutions of the CARO, SC1 type, etc. and / or steps of mechanical preparation, for example brushing, and / or UV treatment steps, with ozone, or of type plasma for activating the molecules of the layer 110 at the surface 112.
  • Molecular bonding of the chip 115 is then carried out with a second substrate 116 (substrate on which it is possible to have an oxide layer beforehand), at the face 112 of the dielectric layer 110 (FIG. figure 1G ).
  • This second substrate 116 corresponds to the object intended to include the graphic element, that is to say the object to identify and / or decorate (jewel, watch glass, precious stone, electronic device screen,. ..).
  • the device 100 is then completed by separating the substrate 102 and the sacrificial layer 104 from the protective layer 106 by implementing one of the separation techniques described above according to the nature of the material of the sacrificial layer 104 (withdrawal by laser when the substrate 102 is transparent and the material of the sacrificial layer 104 is able to decompose or to carry out a degassing, heat treatment when the sacrificial layer 104 is based on a fusible material, application of a mechanical stress for mechanically separating the sacrificial layer 104 from the protective layer 106, or etching to remove the sacrificial layer 104) as shown in FIG. figure 1H .
  • FIGS. 2A to 2D represent the steps of a method of producing a graphics element device 200 according to a second embodiment.
  • a stack comprising the substrate 102, the sacrificial layer 104 placed on the substrate 102 and covered by the protective layer 106 (FIG. Figure 2A ).
  • the materials and / or the thicknesses of these layers are for example substantially similar to the materials and / or the thicknesses previously described in connection with the first embodiment.
  • the material of the protective layer 106 is preferably a transparent material, for example SiO 2 .
  • the stack of layers made in this second embodiment does not include the layer 108 in which the graphic element was etched.
  • the graphic element is etched directly in the protective layer 106, at its upper face 107 which is opposite to the face in contact with the sacrificial layer 104 (see Figure 2B ).
  • Holes 202 are therefore made for example by photolithography and etching, or by etching through a mask made temporarily on the protective layer 106, in the upper face 107 of the protective layer 106, these hollows 202 forming the graphic element.
  • a protective layer in order to protect the layers 106, 104 and 102 of a dry or wet etching carried out at least through the protective layer for delimit portions of these layers that will be part of the device 200. This etching can also be performed through the other layers 106 and 104.
  • This etching can be performed through the stack at a thickness of between about 10 nm and 500 nm, and preferably between about 10 nm and 100 nm.
  • This stage of etching of the protective layer thus makes it possible to define the device 200 of the other devices made in parallel on the same wafer. Indeed, in a similar manner to the first embodiment, although the production of a single device with a graphic element is represented on the Figures 2A to 2D , several other devices with graphic elements, not shown, are also made from the stack of layers described above, by the collective implementation of the steps described in connection with the Figures 2A and 2B .
  • a material such as a metal or polysilicon
  • the deposition of such a material makes it possible, in particular, when the protective layer 106 and / or the second substrate 116 are based on an optically transparent material, to improve the contrast for the observation of the graphic element which is then formed by the hollows and by the material deposited in the hollows.
  • Molecular bonding of the protective layer 106 is then carried out with the second substrate 116, that is to say the object to be identified and / or decorated, at the upper face 107 of the protective layer 106 comprising the graphic element ( Figure 2C ).
  • the face of the second substrate 116 intended to be secured to the protective layer 106 may be previously covered with an oxide layer 204, for example of the same nature as the oxide of the protective layer 106, making the molecular bonding compatible between the second substrate 116 and the transparent layer 106.
  • this molecular bonding is preferably performed in a chamber under empty.
  • the device 200 is then completed by separating the substrate 102 and the sacrificial layer 104 from the protective layer 106 by implementing one of the separation techniques described above according to the nature of the material of the sacrificial layer 104 (withdrawal by laser when the substrate 102 is transparent, heat treatment when the sacrificial layer 104 is based on a fusible material, applying a mechanical stress to mechanically separate the sacrificial layer 104 from the protective layer 106, or etching to remove the sacrificial layer 104) as shown in FIG. 2D figure .

Description

DOMAINE TECHNIQUETECHNICAL AREA

L'invention concerne un procédé de réalisation d'un dispositif à élément graphique. L'invention permet notamment la réalisation d'un ou plusieurs dispositifs, pouvant être réalisés de manière collective, et comprenant des éléments graphiques de dimensions microscopiques et/ou nanoscopiques, représentant par exemple des données telles que du texte et/ou des images et/ou des dessins, enfouis au sein d'un ou plusieurs objets massifs sous forme de vignettes pouvant comporter une ou plusieurs fenêtres transparentes permettant de les voir.The invention relates to a method for producing a device with a graphic element. The invention makes it possible, in particular, to produce one or more devices that can be produced in a collective manner, and that includes graphic elements of microscopic and / or nanoscopic dimensions, representing for example data such as text and / or images and / or or drawings buried in one or more massive objects in the form of vignettes may include one or more transparent windows to see them.

L'invention permet notamment de marquer un objet, par exemple dans un but décoratif et/ou dans un but d'identification ou encore de traçabilité, tel qu'un bijou, un verre de montre, une fenêtre d'un écran d'équipement électronique, une pierre précieuse ou semi-précieuse, ou tout objet à forte valeur ajoutée ou à hautes exigences en matière de sécurité (pièces de sécurité d'un véhicule ou éléments du domaine médical tels que des prothèses).The invention makes it possible, in particular, to mark an object, for example for decorative purposes and / or for purposes of identification or traceability, such as a jewel, a watch glass, a window of an equipment screen. electronic, a gemstone or semi-precious stone, or any object with high added value or high security requirements (vehicle safety parts or elements of the medical field such as prostheses).

ÉTAT DE LA TECHNIQUE ANTÉRIEURESTATE OF THE PRIOR ART

Afin d'authentifier un produit d'origine, il est par exemple connu de graver sur le produit en question des données d'identification en mettant en oeuvre des techniques issues de la micro-électronique, par exemple par photolithographie et gravure du produit.In order to authenticate an original product, it is for example known to engrave on the product in question identification data by using techniques derived from microelectronics, for example by photolithography and etching of the product.

Il est également connu de réaliser des objets comportant des décorations ou graphismes de tailles micrométriques par la mise en oeuvre de ces mêmes techniques.It is also known to produce objects having decorations or graphics of micrometric sizes by the implementation of these same techniques.

Toutefois, la durabilité et la robustesse mécanique de ces décorations ou de ces données d'identification réalisées en surface des objets sont généralement médiocres.However, the durability and mechanical robustness of these decorations or identification data made on the surface of objects are generally poor.

Le document US 5 972 233 A décrit un procédé de réalisation d'un élément graphique pour bijou, dans lequel un substrat est gravé selon le motif de l'élément graphique. Une couche réfléchissante est disposée contre une première face du substrat qui est ensuite solidarisé, au niveau d'une seconde face opposée à la première face, avec un bijou.The document US 5,972,233 A discloses a method of producing a graphic element for jewelry, wherein a substrate is etched according to the pattern of the graphic element. A reflective layer is disposed against a first face of the substrate which is then secured, at a second face opposite the first face, with a jewel.

Là encore, la durabilité et la robustesse mécanique d'un tel élément graphique ne sont pas satisfaisant.Here again, the durability and the mechanical robustness of such a graphic element are not satisfactory.

EXPOSÉ DE L'INVENTIONSTATEMENT OF THE INVENTION

Un but de la présente invention est de proposer un procédé de réalisation d'un dispositif à élément graphique permettant de personnaliser une surface, par exemple plane, d'un objet par l'ajout d'un élément graphique enfoui et protégé, et donc infalsifiable, et qui ne présente pas les inconvénients de l'art antérieur.An object of the present invention is to propose a method for producing a device with a graphic element making it possible to customize a surface, for example a flat surface, of an object by adding a buried and protected graphic element, and thus tamperproof. and which does not have the disadvantages of the prior art.

Pour cela, la présente invention propose un procédé de réalisation d'un dispositif à élément graphique, comportant au moins les étapes de :

  1. a) réalisation d'au moins un empilement comportant au moins une couche sacrificielle disposée entre au moins un premier substrat et au moins une couche protectrice, et au moins un élément graphique réalisé au niveau d'une première face de la couche protectrice opposée à une seconde face de la couche protectrice telle que ladite seconde face soit disposée contre la couche sacrificielle,
  2. b) solidarisation dudit empilement avec au moins un second substrat telle que l'élément graphique soit disposé entre le premier substrat et le second substrat,
  3. c) désolidarisation de la couche sacrificielle vis-à-vis de la couche protectrice.
For this purpose, the present invention proposes a method for producing a device with a graphic element, comprising at least the steps of:
  1. a) producing at least one stack comprising at least one sacrificial layer disposed between at least a first substrate and at least one protective layer, and at least one graphic element made at a first face of the protective layer opposite to a protective layer; second face of the protective layer such that said second face is disposed against the sacrificial layer,
  2. b) securing said stack with at least a second substrate such that the graphic element is disposed between the first substrate and the second substrate,
  3. c) separating the sacrificial layer from the protective layer.

Ainsi, il est possible de réaliser un dispositif à élément graphique (graphismes et/ou textes et/ou éléments d'identification) comportant des motifs microscopiques et/ou nanoscopiques, permettant d'obtenir de très importantes quantités d'informations et/ou d'éléments décoratifs encapsulés de manière durable, inaltérable et infalsifiable grâce à la protection réalisée par la couche protectrice vis-à-vis de l'environnement extérieur.Thus, it is possible to produce a graphic element device (graphics and / or texts and / or identification elements) comprising microscopic and / or nanoscopic patterns, making it possible to obtain very large amounts of information and / or data. decorative elements encapsulated in a durable manner, unalterable and unfalsifiable thanks to the protection provided by the protective layer vis-à-vis the external environment.

Ce procédé permet de reporter un élément graphique sur un objet, appelé second substrat, sans le dénaturer compte tenu de la faible épaisseur de la couche protectrice, par exemple comprise entre environ 100 nm et 100 µm.This method makes it possible to transfer a graphic element to an object, called a second substrate, without denaturing it, given the small thickness of the protective layer, for example between about 100 nm and 100 μm.

L'élément graphique peut être réalisé, au cours de l'étape a), en gravant au moins la première face de la couche protectrice selon un motif de l'élément graphique. Ainsi, l'élément graphique est formé par des creux réalisés par gravure dans la première face de la couche protectrice.The graphic element can be produced, during step a), by etching at least the first face of the protective layer in a pattern of the graphic element. Thus, the graphic element is formed by recesses made by etching in the first face of the protective layer.

Dans ce cas, l'étape b) de solidarisation peut comporter un collage moléculaire de la couche protectrice contre le second substrat mis en oeuvre dans un environnement sous vide. Un tel collage moléculaire permet notamment d'obtenir un dispositif possédant une excellente tenue thermique.In this case, the securing step b) may comprise a molecular bonding of the protective layer against the second substrate used in a vacuum environment. Such molecular bonding makes it possible in particular to obtain a device having excellent thermal resistance.

De plus, la couche protectrice peut être à base d'oxyde, par exemple de l'oxyde de silicium, ou de nitrure de silicium, le second substrat pouvant comporter une face à base d'oxyde, par exemple de l'oxyde de silicium, ou de nitrure de silicium, la couche protectrice et le second substrat pouvant être collés moléculairement l'un à l'autre, au cours de l'étape b), au niveau de la première face de la couche protectrice et de ladite face du second substrat.In addition, the protective layer may be oxide-based, for example silicon oxide, or silicon nitride, the second substrate may comprise an oxide-based face, for example silicon oxide. , or silicon nitride, the protective layer and the second substrate being able to be stuck molecularly to each other, during step b), at the first face of the protective layer and said face of the second substrate.

L'étape a) de réalisation de l'empilement peut comporter la mise en oeuvre des étapes suivantes :

  • réalisation d'un empilement comportant la couche sacrificielle disposée entre le premier substrat et la couche protectrice, et une couche destinée à former l'élément graphique disposée contre la première face de la couche protectrice,
  • gravure de la couche destinée à former l'élément graphique selon un motif de l'élément graphique, les portions restantes de ladite couche gravée formant l'élément graphique,
  • dépôt d'une couche recouvrant la couche protectrice et l'élément graphique,
  • planarisation de la couche recouvrant la couche protectrice et l'élément graphique.
The step a) of carrying out the stack may comprise the implementation of the following steps:
  • making a stack comprising the sacrificial layer disposed between the first substrate and the protective layer, and a layer intended to form the graphic element arranged against the first face of the protective layer,
  • etching of the layer for forming the graphic element according to a pattern of the element graphic, the remaining portions of said etched layer forming the graphic element,
  • deposition of a layer covering the protective layer and the graphic element,
  • planarization of the layer covering the protective layer and the graphic element.

La couche destinée à former l'élément graphique peut être à base d'un matériau au moins partiellement opaque à la lumière visible, et/ou visible à la lumière infrarouge et/ou ultraviolette.The layer intended to form the graphic element may be based on a material at least partially opaque to visible light, and / or visible to infrared and / or ultraviolet light.

Dans une autre variante, l'étape a) de réalisation de l'empilement peut comporter la mise en oeuvre des étapes suivantes :

  • réalisation d'un empilement comportant la couche sacrificielle disposée entre le premier substrat et la couche protectrice, et une couche de masque disposée contre la première face de la couche protectrice,
  • gravure de la couche de masque selon un motif inverse du motif de l'élément graphique,
  • dépôt d'un matériau sur la première face de la couche protectrice à travers la couche de masque gravée, formant l'élément graphique,
  • suppression de la couche de masque gravée,
  • dépôt d'une couche recouvrant la couche protectrice et l'élément graphique,
  • planarisation de la couche recouvrant la couche protectrice et l'élément graphique.
In another variant, step a) of carrying out the stack may comprise the implementation of the following steps:
  • performing a stack comprising the sacrificial layer disposed between the first substrate and the protective layer, and a mask layer disposed against the first face of the protective layer,
  • etching the mask layer in an inverse pattern of the graphic element pattern,
  • depositing a material on the first face of the protective layer through the etched mask layer, forming the graphic element,
  • removing the engraved mask layer,
  • deposition of a layer covering the protective layer and the graphic element,
  • planarization of the layer covering the protective layer and the graphic element.

L'étape b) de solidarisation peut comporter un collage moléculaire de la couche recouvrant la couche protectrice et l'élément graphique contre le second substrat.Step b) of joining may comprise a molecular bonding of the layer covering the protective layer and the graphic element against the second substrate.

Un tel collage moléculaire permet notamment d'obtenir un dispositif possédant une excellente tenue thermique.Such molecular bonding makes it possible in particular to obtain a device having excellent thermal resistance.

La couche recouvrant la couche protectrice et l'élément graphique peut être à base d'un matériau diélectrique.The layer covering the protective layer and the graphic element may be based on a dielectric material.

La couche recouvrant la couche protectrice et l'élément graphique peut être à base d'oxyde, par exemple de l'oxyde de silicium, ou de nitrure de silicium, le second substrat pouvant comporter une face à base d'oxyde, par exemple de l'oxyde de silicium, ou de nitrure de silicium, la couche recouvrant la couche protectrice et l'élément graphique, et le second substrat pouvant être collés moléculairement l'un à l'autre, au cours de l'étape b), au niveau de ladite face du second substrat.The layer covering the protective layer and the graphic element may be based on oxide, for example silicon oxide, or silicon nitride, the second substrate may comprise an oxide-based face, for example the silicon oxide, or silicon nitride, the layer covering the protective layer and the graphic element, and the second substrate being able to be stuck together molecularly during step b), level of said face of the second substrate.

L'étape c) de désolidarisation peut comporter une application d'une contrainte mécanique entre la couche sacrificielle et la couche protectrice, et/ou, lorsque le premier substrat est à base d'un matériau au moins partiellement transparent et la couche sacrificielle à base d'au moins un matériau apte à se décomposer, une irradiation laser de la couche sacrificielle à travers le premier substrat, et/ou, lorsque la couche sacrificielle est à base d'un matériau fusible, un traitement thermique à une température supérieure ou égale à la température de fusion dudit matériau fusible, et/ou une attaque chimique par une solution apte à décomposer le matériau de la couche sacrificielle.Step c) of uncoupling may comprise an application of a mechanical stress between the sacrificial layer and the protective layer, and / or, when the first substrate is based on an at least partially transparent material and the sacrificial layer based on at least one material capable of decomposing, a laser irradiation of the sacrificial layer through the first substrate, and / or, when the sacrificial layer is based on a fusible material, a heat treatment at a temperature greater than or equal to at the melting temperature of said fusible material, and / or an attack by a solution capable of decomposing the material of the sacrificial layer.

La couche protectrice et/ou le second substrat peuvent être à base d'au moins un matériau optiquement transparent. Ainsi, il est possible de voir l'élément graphique à travers la couche protectrice et/ou à travers le second substrat.The protective layer and / or the second substrate may be based on at least one optically transparent material. Thus, it is possible to see the graphic element through the protective layer and / or through the second substrate.

Il est également possible que ni la couche protectrice ni le second substrat ne soit à base d'un matériau optiquement transparent. Dans ce cas, il est par exemple possible que le matériau de la couche protectrice et/ou le matériau du second substrat soit choisis afin de pouvoir lire l'élément graphique par exemple par infrarouges ou ultra-violets, ces matériaux étant par exemple du silicium.It is also possible that neither the protective layer nor the second substrate is based on an optically transparent material. In this case, it is possible, for example, for the material of the protective layer and / or the material of the second substrate to be chosen so as to be able to read the graphic element, for example by infrared or ultraviolet, these materials being, for example, silicon. .

Les étapes a) à c) peuvent être mises en oeuvre de manière collective pour la réalisation de plusieurs dispositifs à éléments graphiques.Steps a) to c) can be implemented collectively for the production of several devices with graphic elements.

Le procédé peut comporter en outre, entre l'étape a) de réalisation de l'empilement et l'étape b) de solidarisation, les étapes de :

  • dépôt d'une couche de protection contre une face de l'empilement opposée au premier substrat,
  • gravure d'au moins la couche protection, délimitant les dispositifs à éléments graphiques,
  • découpe des couches restantes non gravées de l'empilement au niveau des zones gravées au moins dans la couche de protection,
  • retrait de la couche de protection.
The method may furthermore comprise, between step a) of carrying out the stacking and step b) of joining, the steps of:
  • depositing a protective layer against a face of the stack opposite to the first substrate,
  • etching at least the protection layer, defining the devices with graphic elements,
  • cutting the remaining unetched layers of the stack at the level of the etched areas at least in the protective layer,
  • removal of the protective layer.

BRÈVE DESCRIPTION DES DESSINSBRIEF DESCRIPTION OF THE DRAWINGS

La présente invention sera mieux comprise à la lecture de la description d'exemples de réalisation donnés à titre purement indicatif et nullement limitatif en faisant référence aux dessins annexés sur lesquels :

  • les figures 1A à 1H représentent les étapes d'un procédé de réalisation d'un dispositif à élément graphique, objet de la présente invention, selon un premier mode de réalisation,
  • les figures 2A à 2D représentent les étapes d'un procédé de réalisation d'un dispositif à élément graphique, objet de la présente invention, selon un second mode de réalisation.
The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which:
  • the Figures 1A to 1H represent the steps of a method for producing a graphic element device, object of the present invention, according to a first embodiment,
  • the Figures 2A to 2D represent the steps of a method for producing a graphic element device, object of the present invention, according to a second embodiment.

Des parties identiques, similaires ou équivalentes des différentes figures décrites ci-après portent les mêmes références numériques de façon à faciliter le passage d'une figure à l'autre.Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the passage from one figure to another.

Les différentes parties représentées sur les figures ne le sont pas nécessairement selon une échelle uniforme, pour rendre les figures plus lisibles.The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable.

Les différentes possibilités (variantes et modes de réalisation) doivent être comprises comme n'étant pas exclusives les unes des autres et peuvent se combiner entre elles.The different possibilities (variants and embodiments) must be understood as not being exclusive of each other and can be combined with one another.

EXPOSÉ DÉTAILLÉ DE MODES DE RÉALISATION PARTICULIERSDETAILED PRESENTATION OF PARTICULAR EMBODIMENTS

On se réfère tout d'abord aux figures 1A à 1H qui représentent les étapes d'un procédé de réalisation d'un dispositif à élément graphique 100 selon un premier mode de réalisation.We first refer to Figures 1A to 1H which represent the steps of a process of producing a device with a graphic element 100 according to a first embodiment.

Comme représenté sur la figure 1A, on réalise tout d'abord un empilement comportant un substrat 102 pouvant être à base d'un matériau transparent ou non à la lumière. Ce substrat peut par exemple être un wafer, ou une plaquette, de diamètre par exemple égal à environ 200 mm, par exemple à base de semi-conducteur tel que du silicium, ou de verre. Une couche sacrificielle 104 est disposée sur le substrat 102 et est recouverte par une couche protectrice 106.As shown on the Figure 1A firstly, a stack comprising a substrate 102 that may be based on a material that is transparent or not transparent to light is produced. This substrate may for example be a wafer, or a wafer, of diameter for example equal to about 200 mm, for example based on semiconductor such as silicon, or glass. A sacrificial layer 104 is disposed on the substrate 102 and is covered by a protective layer 106.

Le matériau de la couche sacrificielle 104 est choisi afin de pouvoir réaliser par la suite une séparation, ou une désolidarisation, du substrat 102 par rapport à la couche protectrice 106. La couche sacrificielle 104 est par exemple à base de SiNx, par exemple du Si3N4. Dans ce cas, le substrat 102 peut être réalisé à partir d'un matériau transparent tel que du verre afin de pouvoir réaliser par la suite la séparation du substrat 102 et de la couche protectrice 106 par la mise en oeuvre d'un retrait par laser, également appelé « laser liftoff », dans lequel l'irradiation de la couche sacrificielle 104 par un faisceau laser à travers le substrat transparent 102 entraîne une décomposition de ce matériau, désolidarisant ainsi la couche sacrificielle 104 de la couche protectrice 106.The material of the sacrificial layer 104 is chosen in order to be able subsequently to separate or separate the substrate 102 from the protective layer 106. The sacrificial layer 104 is for example based on SiN x , for example If 3 N 4 . In this case, the substrate 102 may be made from a transparent material such as glass in order to subsequently be able to separate the substrate 102 and the protective layer 106 by the implementation of a laser shrinkage. also called a "laser liftoff" in which the irradiation of the sacrificial layer 104 by a laser beam through the transparent substrate 102 causes a decomposition of this material, thus separating the sacrificial layer 104 from the protective layer 106.

Dans une autre variante, la couche sacrificielle 104 peut être à base d'un matériau fusible, par exemple du germanium, c'est-à-dire un matériau apte à fondre à partir d'une certaine température (par exemple 937°C dans le cas du germanium) et réaliser ainsi la séparation de la couche protectrice 106 par rapport au substrat 102. Dans cette variante, le substrat 102 peut être à base d'un matériau non transparent. Dans une autre variante, la couche sacrificielle 104 peut être à base de silicium poreux, ce qui permettra de réaliser un démontage mécanique de la couche sacrificielle 104 vis-à-vis de la couche protectrice 106, par exemple par l'insertion d'une lame entre la couche protectrice 106 et la couche sacrificielle 104. Dans une autre variante, la couche sacrificielle 104, par exemple à base de Ge ou de Si3N4, peut être éliminée par attaque chimique (avec par exemple une solution à base de H2O2 dans le cas d'une couche sacrificielle à base de Ge ou une solution à base H3PO4 dans le cas d'une couche sacrificielle à base de Si3N4), réalisant ainsi la séparation de la couche protectrice 106 et du substrat 102. Dans ces variantes ne mettant pas en oeuvre une irradiation par faisceau laser de la couche sacrificielle 104 à travers le substrat 102, ce substrat 102 peut être à base d'un matériau non transparent.In another variant, the sacrificial layer 104 may be based on a fusible material, for example germanium, that is to say a material capable of melting from a certain temperature (for example 937 ° C in the case of germanium) and thus achieve the separation of the protective layer 106 relative to the substrate 102. In this variant, the substrate 102 may be based of a non-transparent material. In another variant, the sacrificial layer 104 may be based on porous silicon, which will make it possible to mechanically disassemble the sacrificial layer 104 with respect to the protective layer 106, for example by inserting a blade between the protective layer 106 and the sacrificial layer 104. In another variant, the sacrificial layer 104, for example based on Ge or Si 3 N 4 , can be eliminated by etching (with, for example, a solution based on H 2 O 2 in the case of a Ge-based sacrificial layer or an H 3 PO 4 -based solution in the case of a sacrificial layer based on Si 3 N 4 ), thus achieving the separation of the protective layer 106 and the substrate 102. In these variants not implementing a laser beam irradiation of the sacrificial layer 104 through the substrate 102, the substrate 102 may be based on a non-transparent material.

La couche protectrice 106 est par exemple déposée sur la couche sacrificielle 104 et est à base, par exemple, d'oxyde (tel que du SiO2) et/ou d'alumine et/ou de diamant (tel que du carbone type diamant DLC) et/ou de nitrure (tel que du Si3N4) et/ou de résine et/ou d'au moins un diélectrique. L'épaisseur de la couche protectrice 106 est par exemple comprise entre environ 100 nm et 100 µm afin de pouvoir protéger mécaniquement l'élément graphique qui sera réalisé par la suite au niveau de la couche protectrice 106. Afin de pouvoir observer cet élément graphique à travers la couche protectrice 106, il est possible de réaliser cette couche protectrice 106 à base d'un matériau optiquement transparent. Le degré de transparence de la couche 106 peut être variable. Ainsi, l'épaisseur et le matériau de la couche 106 peuvent être choisis afin que l'élément graphique, qui sera réalisé par la suite, puisse être visible à travers la couche transparente 106.The protective layer 106 is for example deposited on the sacrificial layer 104 and is based, for example, on oxide (such as SiO 2 ) and / or alumina and / or diamond (such as diamond-like carbon DLC and / or nitride (such as Si 3 N 4 ) and / or resin and / or at least one dielectric. The thickness of the protective layer 106 is for example between about 100 nm and 100 μm in order to protect mechanically the graphic element which will be subsequently produced at the level of the protective layer 106. In order to be able to observe this graphic element through the protective layer 106, it is possible to produce this protective layer 106 based on an optically transparent material . The degree of transparency of the layer 106 may be variable. Thus, the thickness and the material of the layer 106 can be chosen so that the graphic element, which will be realized later, can be visible through the transparent layer 106.

Une couche 108, dans laquelle l'élément graphique est destiné à être réalisé, est disposée sur une face supérieure 107 de la couche protectrice 106 qui est opposée à la face de la couche protectrice 106 en contact avec la couche sacrificielle 104. Cette couche 108 peut être à base de n'importe quel matériau, et notamment, lorsque la couche protectrice 106 et/ou l'objet sur lequel l'élément graphique sera solidarisé sont transparents, un matériau présentant un contraste vis-à-vis des matériaux qui seront disposés par la suite sur la couche 108 (notamment les éléments référencés 110 et 116 sur la figure 1H) étant donné que l'élément graphique pourra être observé à travers la couche protectrice 106 et/ou l'objet transparent. Il est également possible que le matériau de la couche 108 soit au moins partiellement opaque à certaines longueurs d'ondes. Par exemple, si l'élément graphique est destiné à être vu à la lumière visible (longueurs d'ondes comprises entre environ 380 nm et 780 nm) la couche 108 peut être à base de métal. La couche 108 peut également être réalisée à partir d'un matériau présentant un contraste dans la gamme des longueurs d'ondes de la lumière infrarouge (longueurs d'ondes comprises entre environ 780 nm et 1 mm) ou ultraviolette (longueurs d'ondes comprises entre environ 380 nm et 10 nm). L'épaisseur de la couche 108 est par exemple comprise entre environ 10 nm et 1 µm, et de préférence comprise entre environ 50 nmet 200 nm.A layer 108, in which the graphic element is intended to be made, is disposed on an upper face 107 of the protective layer 106 which is opposite the face of the protective layer 106 in contact with the sacrificial layer 104. This layer 108 may be based on any material, and in particular, when the protective layer 106 and / or the object on which the graphic element will be joined are transparent, a material having a contrast vis-à-vis the materials to be subsequently arranged on the layer 108 (in particular the elements referenced 110 and 116 on the figure 1H ) since the graphic element can be observed through the protective layer 106 and / or the transparent object. It is also possible that the material of the layer 108 is at least partially opaque at certain wavelengths. For example, if the graphic element is to be seen in visible light (wavelengths between about 380 nm and 780 nm) the layer 108 may be metal-based. The layer 108 can also be made from a material having a contrast in the wavelength range of infrared light (wavelengths between about 780 nm and 1 mm) or ultraviolet (wavelengths between about 380 nm and 10 nm). The thickness of the layer 108 is, for example, between about 10 nm and 1 μm, and preferably between about 50 nm and 200 nm.

La couche 108 est ensuite gravée afin que les portions restantes 109, ou les espaces ou creux formés entre les portions gravées de la couche 108, forment l'élément graphique souhaité (figure 1B). Cet élément graphique représente par exemple des données.The layer 108 is then etched so that the remaining portions 109, or gaps or gaps formed between the etched portions of the layer 108, form the desired graphic element ( Figure 1B ). This graphic element represents for example data.

De plus, les portions restantes 109 ou les espaces formés entre les portions restantes ont par exemple des dimensions dont la limite inférieure correspond aux limites technologiques des techniques de gravure utilisées. La technique de gravure mise en oeuvre peut être choisie en fonction de la nature du matériau de la couche 108.In addition, the remaining portions 109 or spaces formed between the remaining portions have for example dimensions whose lower limit corresponds to the technological limits of the engraving techniques used. The etching technique used may be chosen depending on the nature of the material of the layer 108.

Il est possible de déposer une couche de masque, par exemple à base d'un matériau minéral, sur la couche 108, de réaliser une gravure de la couche de masque selon le motif de l'élément graphique, puis de graver la couche 108 à travers le masque réalisé sur la couche 108. Le masque est ensuite supprimé.It is possible to deposit a mask layer, for example based on a mineral material, on the layer 108, to etch the mask layer according to the pattern of the graphic element, then to etch the layer 108 to through the mask made on layer 108. The mask is then deleted.

Dans une variante, il est possible de réaliser l'élément graphique en déposant tout d'abord sur la face 107 de la couche protectrice 106 une couche de masque, par exemple à base de résine.In a variant, it is possible to produce the graphic element by first depositing on the face 107 of the protective layer 106 a mask layer, for example based on resin.

Cette couche de résine est alors gravée afin de former un masque dont le motif correspond au motif inverse de l'élément graphique. Le matériau destiné à former l'élément graphique, par exemple du métal ou tout autre matériau adapté et par exemple similaire au matériau de la couche 108 décrite précédemment, est alors déposé sur la face 107 de la couche protectrice 106 à travers le masque, formant ainsi l'élément graphique. Enfin, le masque de résine est supprimé afin de ne conserver sur la face 107 de la couche protectrice 106 que le matériau formant l'élément graphique. Les portions de matériau formant l'élément graphique sont donc similaires aux portions 109 de la couche 108 formant l'élément graphique représentées sur la figure 1B.This resin layer is then etched to form a mask whose pattern corresponds to the inverse pattern of the graphic element. The material intended to form the graphic element, for example metal or any other suitable material and for example similar to the material of the layer 108 described above, is then deposited on the face 107 of the protective layer 106 through the mask, forming thus the graphic element. Finally, the resin mask is removed so as to keep on the face 107 of the protective layer 106 only the material forming the graphic element. The portions of material forming the graphic element are therefore similar to the portions 109 of the layer 108 forming the graphic element represented on the Figure 1B .

Comme représenté sur la figure 1C, on réalise ensuite le dépôt puis la planarisation, par exemple mécano-chimique, d'une couche 110, ou d'un empilement de couches, à base d'au moins un matériau compatible avec un collage moléculaire qui sera décrit plus loin. Cette couche 110 recouvre totalement les portions restantes 109 de la couche 108 formant l'élément graphique, ainsi que les portions de la face 107 de la couche transparente 106 qui ne sont pas recouvertes par les portions restantes 109 de la couche 108. La couche 110 est par exemple à base d'un matériau diélectrique, et peut notamment être à base d'oxyde, par exemple du SiO2. La planarisation permet de rendre une face supérieure 112 de la couche 110 compatible, notamment en ce qui concerne la rugosité et la topologie de la surface, pour la mise en oeuvre ultérieure d'un collage moléculaire de la couche 110, au niveau de la face supérieure 112, avec l'objet destiné à recevoir l'élément graphique. La couche 110 peut être réalisée afin que l'épaisseur de cette couche se trouvant au-dessus des portions restantes 109 de la couche 108 soit comprise entre environ 10 nm et 10 µm, et de préférence comprise entre environ 10 nm et 1 µm.As shown on the figure 1C , then depositing and planarizing, for example mechanochemical, a layer 110, or a stack of layers, based on at least one material compatible with molecular bonding which will be described later. This layer 110 completely covers the remaining portions 109 of the layer 108 forming the graphic element, as well as the portions of the face 107 of the transparent layer 106 which are not covered by the remaining portions 109 of the layer 108. The layer 110 is for example based on a dielectric material, and may in particular be based on oxide, for example SiO 2 . The planarization makes it possible to render an upper face 112 of the layer 110 compatible, in particular as regards the roughness and topology of the surface, for the subsequent implementation of a molecular bonding of the layer 110, at the level of the face upper 112, with the object intended to receive the graphic element. The layer 110 may be made so that the thickness of this layer lying above the remaining portions 109 of the layer 108 is between about 10 nm and 10 μm, and preferably between about 10 nm and 1 μm.

Bien que la réalisation d'un seul dispositif à élément graphique 100 soit décrite en liaison avec les figures 1A à 1H, d'autres dispositifs à éléments graphiques peuvent également être réalisés à partir de l'empilement de couches précédemment décrit, autour du dispositif 100. Ainsi, les étapes précédemment décrites relatives à la gravure de la couche 108, au dépôt de la couche 110 et à la planarisation de la couche 110 peuvent être mises en oeuvre de manière collective pour tous les dispositifs réalisés à partir de l'empilement de couches 102, 104, 106 et 108 formant dans ce cas un wafer (ou plaquette).Although the realization of a single device with graphic element 100 is described in connection with the Figures 1A to 1H other devices with graphic elements can also be made from the stack of layers described above, around the device 100. Thus, the previously described steps relating to the etching of the layer 108, the deposition of the layer 110 and planarization of the layer 110 may be implemented collectively for all devices made from the stack of layers 102, 104, 106 and 108 forming in this case a wafer (or wafer).

De plus, en réalisant une planarisation de la couche 110 de manière collective pour tous les dispositifs du wafer, une telle planarisation n'engendre alors pas d'effet de bord (phénomène d'arrondissement des bords) au niveau des bords de la couche 110 de chaque dispositif, ce qui facilite par la suite le collage moléculaire qui sera réalisé au niveau de la face 112 de la couche 110.Moreover, by carrying out a planarization of the layer 110 in a collective manner for all the devices of the wafer, such a planarization then generates no edge effect (edge rounding phenomenon) at the edges of the layer 110. of each device, which subsequently facilitates the molecular bonding which will be performed at the face 112 of the layer 110.

On dépose ensuite, sur la face 112 de la couche 110, une couche de protection 114, par exemple à base de Si3N4, de résine, ou encore de carbone (figure 1D).Then, on the face 112 of the layer 110, a protective layer 114, for example based on Si 3 N 4 , resin, or carbon ( figure 1D ).

Cette couche de protection 114 permet de protéger les couches 102, 104, 106, 109 et 110 d'une gravure sèche ou humide réalisée au moins à travers cette couche de protection 114 pour délimiter des portions de ces couches qui feront parties du dispositif 100.This protective layer 114 makes it possible to protect the layers 102, 104, 106, 109 and 110 of a dry or wet etching carried out at least through this protective layer 114 for delimiting portions of these layers that will be part of the device 100.

Cette gravure peut également être réalisée à travers les autres couches 110 et/ou 106 et/ou 104. Sur l'exemple de la figure 1D, cette gravure est réalisée à travers les couches 114, 110 et 106.This etching can also be performed through the other layers 110 and / or 106 and / or 104. In the example of figure 1D this etching is carried out through the layers 114, 110 and 106.

Cette étape de gravure permet donc de délimiter « en surface » le dispositif 100 des autres dispositifs réalisés parallèlement sur le même wafer.This etching step therefore allows delimiting "on the surface" the device 100 of the other devices made in parallel on the same wafer.

Une découpe, par exemple par sciage, est alors réalisée à travers le substrat 102, et éventuellement une ou plusieurs des autres couches 104, 106 et 110 si celles-ci n'ont pas été précédemment gravées, au niveau des délimitations précédemment réalisées par gravure, permettant d'obtenir une puce individuelle 115 (figure 1E).A cut, for example by sawing, is then carried out through the substrate 102, and optionally one or more of the other layers 104, 106 and 110 if they have not been previously etched, at the level of the boundaries previously made by etching , making it possible to obtain an individual chip 115 ( figure 1E ).

Comme représenté sur la figure 1F, la couche de protection 114 est ensuite supprimée. Dans une variante, il est possible de retirer la couche de protection 114 préalablement à la découpe réalisée dans le substrat 102. Des étapes de préparation au collage moléculaire de la face 112 peuvent alors être mises en oeuvre de manière collective ou individuelle pour la puce 115 ou l'ensemble des puces issues de l'empilement initial des couches 102, 104, 106, 108 et 110. Ces étapes de préparation peuvent être des étapes de nettoyage chimique de la surface 112 par des solutions du type CARO, SC1, etc., et/ou des étapes de préparation mécanique, par exemple un brossage, et/ou des étapes de traitement UV, à l'ozone, ou de type plasma permettant d'activer les molécules de la couche 110 au niveau de la surface 112.As shown on the figure 1F the protective layer 114 is then removed. In a variant, it is possible to remove the protective layer 114 prior to cutting made in the substrate 102. Preparation steps for the molecular bonding of the face 112 can then be implemented collectively or individually for the chip. or all the chips from the initial stack of the layers 102, 104, 106, 108 and 110. These preparation steps may be chemical cleaning steps of the surface 112 by solutions of the CARO, SC1 type, etc. and / or steps of mechanical preparation, for example brushing, and / or UV treatment steps, with ozone, or of type plasma for activating the molecules of the layer 110 at the surface 112.

On réalise ensuite un collage moléculaire de la puce 115 avec un second substrat 116 (substrat sur lequel il est possible de disposer au préalable une couche d'oxyde), au niveau de la face 112 de la couche diélectrique 110 (figure 1G). Ce second substrat 116 correspond à l'objet destiné à comporter l'élément graphique, c'est-à-dire l'objet à identifier et/ou à décorer (bijou, verre de montre, pierre précieuse, écran de dispositif électronique, ...).Molecular bonding of the chip 115 is then carried out with a second substrate 116 (substrate on which it is possible to have an oxide layer beforehand), at the face 112 of the dielectric layer 110 (FIG. figure 1G ). This second substrate 116 corresponds to the object intended to include the graphic element, that is to say the object to identify and / or decorate (jewel, watch glass, precious stone, electronic device screen,. ..).

Le dispositif 100 est ensuite achevé en séparant le substrat 102 et la couche sacrificielle 104 de la couche protectrice 106 par la mise en oeuvre d'une des techniques de séparation décrite précédemment en fonction de la nature du matériau de la couche sacrificielle 104 (retrait par laser lorsque le substrat 102 est transparent et que le matériau de la couche sacrificielle 104 est apte à se décomposer ou à réaliser un dégazage, traitement thermique lorsque la couche sacrificielle 104 est à base d'un matériau fusible, application d'une contrainte mécanique pour séparer mécaniquement la couche sacrificielle 104 de la couche protectrice 106, ou attaque chimique pour éliminer la couche sacrificielle 104) comme cela est représenté sur la figure 1H.The device 100 is then completed by separating the substrate 102 and the sacrificial layer 104 from the protective layer 106 by implementing one of the separation techniques described above according to the nature of the material of the sacrificial layer 104 (withdrawal by laser when the substrate 102 is transparent and the material of the sacrificial layer 104 is able to decompose or to carry out a degassing, heat treatment when the sacrificial layer 104 is based on a fusible material, application of a mechanical stress for mechanically separating the sacrificial layer 104 from the protective layer 106, or etching to remove the sacrificial layer 104) as shown in FIG. figure 1H .

On se réfère maintenant aux figures 2A à 2D qui représentent les étapes d'un procédé de réalisation d'un dispositif à élément graphique 200 selon un second mode de réalisation.We now refer to Figures 2A to 2D which represent the steps of a method of producing a graphics element device 200 according to a second embodiment.

De manière analogue au premier mode de réalisation, on réalise tout d'abord un empilement comportant le substrat 102, la couche sacrificielle 104 disposée sur le substrat 102 et recouverte par la couche protectrice 106 (figure 2A). Les matériaux et/ou les épaisseurs de ces couches sont par exemple sensiblement similaires aux matériaux et/ou aux épaisseurs précédemment décrits en liaison avec le premier mode de réalisation. Dans ce second mode de réalisation, le matériau de la couche protectrice 106 est de préférence un matériau transparent, par exemple du SiO2.In a similar manner to the first embodiment, a stack comprising the substrate 102, the sacrificial layer 104 placed on the substrate 102 and covered by the protective layer 106 (FIG. Figure 2A ). The materials and / or the thicknesses of these layers are for example substantially similar to the materials and / or the thicknesses previously described in connection with the first embodiment. In this second embodiment, the material of the protective layer 106 is preferably a transparent material, for example SiO 2 .

Toutefois, contrairement au premier mode de réalisation, l'empilement de couches réalisé dans ce second mode de réalisation ne comporte pas la couche 108 dans laquelle l'élément graphique était gravé.However, unlike the first embodiment, the stack of layers made in this second embodiment does not include the layer 108 in which the graphic element was etched.

Dans ce second mode de réalisation, l'élément graphique est gravé directement dans la couche protectrice 106, au niveau de sa face supérieure 107 qui est opposée à la face en contact avec la couche sacrificielle 104 (voir figure 2B). Des creux 202 sont donc réalisés par exemple par photolithographie et gravure, ou par gravure à travers un masque réalisé temporairement sur la couche protectrice 106, dans la face supérieure 107 de la couche protectrice 106, ces creux 202 formant l'élément graphique.In this second embodiment, the graphic element is etched directly in the protective layer 106, at its upper face 107 which is opposite to the face in contact with the sacrificial layer 104 (see Figure 2B ). Holes 202 are therefore made for example by photolithography and etching, or by etching through a mask made temporarily on the protective layer 106, in the upper face 107 of the protective layer 106, these hollows 202 forming the graphic element.

Il est possible de déposer ensuite, sur la face supérieure 107 de la couche protectrice 106, une couche de protection afin de protéger les couches 106, 104 et 102 d'une gravure sèche ou humide réalisée au moins à travers la couche de protection pour délimiter des portions de ces couches qui feront parties du dispositif 200. Cette gravure peut également être réalisée à travers les autres couches 106 et 104.It is then possible to deposit, on the upper face 107 of the protective layer 106, a protective layer in order to protect the layers 106, 104 and 102 of a dry or wet etching carried out at least through the protective layer for delimit portions of these layers that will be part of the device 200. This etching can also be performed through the other layers 106 and 104.

Cette gravure peut être réalisée au travers de l'empilement sur une épaisseur comprise entre environ 10 nm et 500 nm, et de préférence comprise entre environ 10 nm et 100 nm. Cette étape de gravure de la couche de protection permet donc de délimiter le dispositif 200 des autres dispositifs réalisés parallèlement sur le même wafer. En effet, de manière analogue au premier mode de réalisation, bien que la réalisation d'un seul dispositif à élément graphique soit représenté sur les figures 2A à 2D, plusieurs autres dispositifs à élément graphiques, non représentés, sont également réalisés à partir de l'empilement de couches précédemment décrit, par la mise en oeuvre collective des étapes décrites en liaison avec les figures 2A et 2B. Une découpe, par exemple par sciage, est alors réalisée à travers le substrat 102, et éventuellement les couches 104 et 106 si ces couches n'ont pas été gravées au préalable, au niveau des délimitations précédemment réalisées par gravure dans la couche de protection, permettant d'obtenir une puce individuelle, la couche de protection étant ensuite supprimée. Là encore, il est possible que la couche de protection soit retirée préalablement à la mise en oeuvre de la découpe à travers le substrat 102.This etching can be performed through the stack at a thickness of between about 10 nm and 500 nm, and preferably between about 10 nm and 100 nm. This stage of etching of the protective layer thus makes it possible to define the device 200 of the other devices made in parallel on the same wafer. Indeed, in a similar manner to the first embodiment, although the production of a single device with a graphic element is represented on the Figures 2A to 2D , several other devices with graphic elements, not shown, are also made from the stack of layers described above, by the collective implementation of the steps described in connection with the Figures 2A and 2B . A cut, for example by sawing, is then carried out through the substrate 102, and possibly the layers 104 and 106 if these layers have not been etched before, at the level of the boundaries previously made by etching in the protective layer, to obtain an individual chip, the protective layer is then removed. Again, it is possible that the protective layer is removed prior to the implementation of the cut through the substrate 102.

Dans une variante de réalisation, il est possible, préalablement au dépôt de la couche de protection, de déposer un matériau, tel qu'un métal ou du polysilicium, dans les creux 202. Le dépôt d'un tel matériau permet notamment, lorsque la couche protectrice 106 et/ou le second substrat 116 sont à base d'un matériau optiquement transparent, d'améliorer le contraste pour l'observation de l'élément graphique qui est alors formé par les creux et par le matériau déposé dans les creux.In an alternative embodiment, it is possible, prior to the deposition of the protective layer, to deposit a material, such as a metal or polysilicon, in the recesses 202. The deposition of such a material makes it possible, in particular, when the protective layer 106 and / or the second substrate 116 are based on an optically transparent material, to improve the contrast for the observation of the graphic element which is then formed by the hollows and by the material deposited in the hollows.

On réalise ensuite un collage moléculaire de la couche protectrice 106 avec le second substrat 116, c'est-à-dire l'objet à identifier et/ou à décorer, au niveau de la face supérieure 107 de la couche protectrice 106 comportant l'élément graphique (figure 2C).Molecular bonding of the protective layer 106 is then carried out with the second substrate 116, that is to say the object to be identified and / or decorated, at the upper face 107 of the protective layer 106 comprising the graphic element ( Figure 2C ).

Dans ce second mode de réalisation, la face du second substrat 116 destinée à être solidarisée à la couche protectrice 106 peut être préalablement recouverte d'une couche d'oxyde 204, par exemple de même nature que l'oxyde de la couche protectrice 106, rendant compatible le collage moléculaire entre le second substrat 116 et la couche transparente 106. De plus, compte tenu de la présence des creux 202 au niveau de la face 107 destinée à être collée moléculairement, ce collage moléculaire est réalisé de préférence dans une chambre sous vide.In this second embodiment, the face of the second substrate 116 intended to be secured to the protective layer 106 may be previously covered with an oxide layer 204, for example of the same nature as the oxide of the protective layer 106, making the molecular bonding compatible between the second substrate 116 and the transparent layer 106. In addition, given the presence of the recesses 202 at the side 107 to be bonded molecularly, this molecular bonding is preferably performed in a chamber under empty.

Le dispositif 200 est ensuite achevé en séparant le substrat 102 et la couche sacrificielle 104 de la couche protectrice 106 par la mise en oeuvre d'une des techniques de séparation décrite précédemment en fonction de la nature du matériau de la couche sacrificielle 104 (retrait par laser lorsque le substrat 102 est transparent, traitement thermique lorsque la couche sacrificielle 104 est à base d'un matériau fusible, application d'une contrainte mécanique pour séparer mécaniquement la couche sacrificielle 104 de la couche protectrice 106, ou attaque chimique pour éliminer la couche sacrificielle 104) comme cela est représenté sur la figure 2D.The device 200 is then completed by separating the substrate 102 and the sacrificial layer 104 from the protective layer 106 by implementing one of the separation techniques described above according to the nature of the material of the sacrificial layer 104 (withdrawal by laser when the substrate 102 is transparent, heat treatment when the sacrificial layer 104 is based on a fusible material, applying a mechanical stress to mechanically separate the sacrificial layer 104 from the protective layer 106, or etching to remove the sacrificial layer 104) as shown in FIG. 2D figure .

Claims (14)

  1. Method for producing a device (100, 200) comprising a graphical element (109, 202), including at least the following steps:
    a) production of at least one stack including at least one sacrificial layer (104) positioned between at least one first substrate (102) and at least one protective layer (106), and at least one graphical element (109, 202) produced at a first face (107) of the protective layer (106) opposite a second face of the protective layer (106), such that said second face is positioned against the sacrificial layer (104),
    b) attachment of said stack to at least one second substrate (116) such that the graphical element (109, 202) is positioned between the first substrate (102) and the second substrate (116),
    c) separation of the sacrificial layer (104) from the protective layer (106).
  2. Method according to claim 1, in which the graphical element (202) is produced, in the course of step a), by etching at least the first face (107) of the protective layer (106) with a pattern of the graphical element (202).
  3. Method according to claim 2, in which step b) of attachment comprises a molecular bonding of the protective layer (106) against the second substrate (116), implemented under a vacuum.
  4. Method according to claim 3, in which the protective layer (106) is made from silicon oxide or silicon nitride, where the second substrate (116) includes a face (204) made from silicon oxide or silicon nitride, and where the protective layer (106) and the second substrate (116) are bonded molecularly to one another, in the course of step b), at the first face (107) of the protective layer (106) and at said face (204) of the second substrate (116).
  5. Method according to claim 1, in which step a) of production of the stack includes implementation of the following steps:
    - production of a stack including the sacrificial layer (104) positioned between the first substrate (102) and the protective layer (106), and a layer (108) which is intended to form the graphical element (109) positioned against the first face (107) of the protective layer (106),
    - etching of the layer (108) which is intended to form the graphical element (109) with a pattern of the graphical element, where the remaining portions of said etched layer (108) form the graphical element (109),
    - deposition of a layer (110) covering the protective layer (106) and the graphical element (109),
    - planarisation of the layer (110) covering the protective layer (106) and the graphical element (109).
  6. Method according to claim 5, in which the layer (108) which is intended to form the graphical element (109) is made from a material which is at least partially opaque to visible light, and/or visible in infrared and/or ultraviolet light.
  7. Method according to claim 1, in which step a) of production of the stack includes implementation of the following steps:
    - production of a stack including the sacrificial layer (104) positioned between the first substrate (102) and the protective layer (106), and a mask layer positioned against the first face (107) of the protective layer (106),
    - etching of the mask layer with a pattern which is the reverse of the pattern of the graphical element,
    - deposition of a material on the first face (107) of the protective layer (106) through the etched mask layer, forming the graphical element,
    - elimination of the etched mask layer,
    - deposition of a layer (110) covering the protective layer (106) and the graphical element,
    - planarisation of the layer (110) covering the protective layer (106) and the graphical element.
  8. Method according to one of claims 5 to 7, in which step b) of attachment includes a molecular bonding of the layer (110) covering the protective layer (106) and the graphical element (109) against the second substrate (116).
  9. Method according to one of claims 5 to 8, in which the layer (110) covering the protective layer (106) and the graphical element (109) is made from a dielectric material.
  10. Method according to claim 8, in which the layer (110) covering the protective layer (106) and the graphical element (109) is made from silicon oxide or silicon nitride, where the second substrate (116) includes a face (204) made from silicon oxide or silicon nitride, where the layer (110) covering the protective layer (106) and the graphical element (109), and the second substrate (116) are bonded molecularly to one another, in the course of step b), at said face (204) of the second substrate (116).
  11. Method according to one of preceding claims, in which step c) of separation includes an application of a mechanical stress between the sacrificial layer (104) and the protective layer (106), and/or, when the first substrate (102) is made from an at least partially transparent material, and the sacrificial layer (104) from at least one material able to disintegrate, a laser irradiation of the sacrificial layer (104) through the first substrate (102), and/or, when the sacrificial layer (104) is made from a fusible material, a thermal treatment at a temperature higher than or equal to the melting point of said fusible material, and/or a chemical attack by a solution able to disintegrate the material of the sacrificial layer (104).
  12. Method according to one of preceding claims, in which the protective layer (106) and/or the second substrate (116) are made from at least one optically transparent material.
  13. Method according to one of preceding claims, in which steps a) to c) are implemented collectively for the production of several devices (100, 200) with graphical elements.
  14. Method according to claim 13, also including, between step a) of production of the stack and step b) of attachment, the following steps:
    - deposition of a protective layer (114) against a face (112) of the stack opposite the first substrate (102),
    - etching of at least the protective layer (114), delimiting the devices (100, 200) with graphical elements,
    - cutting of the remaining unetched layers (110, 108, 106, 104, 102) of the stack in the area of the etched zones at least in the protective layer (114),
    - removal of the protective layer (114).
EP10733009.4A 2009-07-22 2010-07-20 Method for manufacturing a device with a display element Not-in-force EP2456625B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0955124A FR2948318B1 (en) 2009-07-22 2009-07-22 METHOD FOR MAKING A GRAPHICAL ELEMENT DEVICE
PCT/EP2010/060456 WO2011009847A2 (en) 2009-07-22 2010-07-20 Method for manufacturing a device with a display element

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EP2456625A2 EP2456625A2 (en) 2012-05-30
EP2456625B1 true EP2456625B1 (en) 2013-11-06

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EP (1) EP2456625B1 (en)
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FR2926748B1 (en) * 2008-01-25 2010-04-02 Commissariat Energie Atomique OBJECT PROVIDED WITH A GRAPHIC ELEMENT REPORTED ON A SUPPORT AND METHOD OF MAKING SUCH AN OBJECT.
FR3007892B1 (en) 2013-06-27 2015-07-31 Commissariat Energie Atomique METHOD FOR TRANSFERRING A THIN LAYER WITH THERMAL ENERGY SUPPLY TO A FRAGILIZED AREA VIA AN INDUCTIVE LAYER

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US4490440A (en) * 1983-08-16 1984-12-25 Reber William L High technology jewelry and fabrication of same
JP3319661B2 (en) * 1993-10-12 2002-09-03 日本写真印刷株式会社 Method for manufacturing transfer molding foil and plastic molded article having multicolor light-transmitting pattern
US5972233A (en) * 1996-01-31 1999-10-26 Refractal Design, Inc. Method of manufacturing a decorative article
JP2002507929A (en) * 1998-04-23 2002-03-12 ヴィンター・ツェー・ファウ・デー・テヒニーク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Decorative stone
FR2787061B1 (en) * 1998-12-14 2001-01-26 Becton Dickinson France METHOD AND INSTALLATION FOR SURFACE MARKING OF A SUBSTRATE
JP3495696B2 (en) * 2000-11-08 2004-02-09 株式会社アトライズヨドガワ Key top and manufacturing method thereof
US20030034328A1 (en) * 2001-08-20 2003-02-20 Pang-Tsung Lu Method of making 3d patterns on a mold
FR2851496B1 (en) * 2003-02-20 2005-05-27 Savoyet Jean Louis P J MEANS AND DEVICES FOR PROTECTING A LITHOGRAPHIC GRAPHICS REPORTED ON AN OBJECT THAT CAN CONTAIN AN ELECTRONIC DEVICE FOR REPERTING.
FR2856192B1 (en) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator METHOD FOR PRODUCING HETEROGENEOUS STRUCTURE AND STRUCTURE OBTAINED BY SUCH A METHOD
DE60328798D1 (en) * 2003-12-16 2009-09-24 Asulab Sa Process for producing a transparent element with invisible electrodes
US7691281B2 (en) * 2005-04-28 2010-04-06 Harmony Fastening Systems, Inc. Method of producing a reflective design
FR2888402B1 (en) * 2005-07-06 2007-12-21 Commissariat Energie Atomique METHOD FOR ASSEMBLING SUBSTRATES BY DEPOSITING A THIN OXIDE OR NITRIDE BONDING LAYER AND STRUCTURE THUS ASSEMBLED
FR2893018B1 (en) * 2005-11-09 2008-03-14 Commissariat Energie Atomique METHOD OF FORMING MEDIA HAVING PATTERNS, SUCH AS LITHOGRAPHIC MASKS
FR2906078B1 (en) * 2006-09-19 2009-02-13 Commissariat Energie Atomique METHOD FOR MANUFACTURING A MIXED MICRO-TECHNOLOGICAL STRUCTURE AND A STRUCTURE THUS OBTAINED

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WO2011009847A3 (en) 2011-04-14
FR2948318B1 (en) 2011-08-19
WO2011009847A2 (en) 2011-01-27
US20120111829A1 (en) 2012-05-10
EP2456625A2 (en) 2012-05-30

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