EP2389759A1 - Structure d'amplification et chaîne de détection et de mesure comportant une telle structure - Google Patents
Structure d'amplification et chaîne de détection et de mesure comportant une telle structureInfo
- Publication number
- EP2389759A1 EP2389759A1 EP10707938A EP10707938A EP2389759A1 EP 2389759 A1 EP2389759 A1 EP 2389759A1 EP 10707938 A EP10707938 A EP 10707938A EP 10707938 A EP10707938 A EP 10707938A EP 2389759 A1 EP2389759 A1 EP 2389759A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- detector
- output
- input
- sensor
- amplification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 25
- 230000003321 amplification Effects 0.000 title claims abstract description 23
- 238000001514 detection method Methods 0.000 title description 5
- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005433 particle physics related processes and functions Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Definitions
- Amplification structure and detection and measurement chain comprising such a structure
- the present invention relates to an amplification structure for example of charge and a detection and measurement chain comprising such a structure intended in particular for capacitive sensors / detectors.
- Such a structure is implemented for example in a radiation detector.
- the radiation detectors produce a current pulse with an integrated charge that is proportional to the energy deposited in the detector by each photon or incident particle.
- the charge pre-amplifier also known as "CSA” for “Charge Sensitive Amplifier”
- CSA Charge Sensitive Amplifier
- the pre-amplification stage generally consists of a structure operating in voltage mode (MOS transistor structure with folded CASCODE or differential pair) or sometimes of a single transistor or even in rare cases of a circuit operating in the same mode. current.
- US 2003/0001079 discloses a pixel amplifier using an operational amplifier in an integrator configuration that minimizes dark current, pixel-to-pixel variations, and thermal noise.
- PCT / WO2006 / 072848 describes a pixellated current pre-amplifier based on regulated current mirrors for tomography applications with improved performances in terms of noise (dominated by the noise of the circuit) and bandwidth. .
- Such a circuit then generates an independence of the noise with the capacity of the detector, but the gain is small and the offset (offset) at the output, high.
- the object of the invention is therefore to solve these problems.
- the subject of the invention is an amplification structure intended for reading a signal coming from a capacitive sensor / detector, characterized in that it comprises amplifier circuit means having a first input a low-impedance current X, a second input Y and at least one output Z, in that the first input X, virtual ground, is connected to a terminal of the sensor / detector, the other terminal of the latter being connected to the mass, the second input Y is connected to ground, the at least one output Z is connected to a terminal of an output circuit having a resistor and a parallel output capacitor, the other terminal of this output circuit being connected to ground and in that an output signal is recovered at the terminals of this output circuit, resulting in the noise of the sensor / detector-amplification structure system being independent of the capacitance of the sensor / receiver and the connections between the sensor / detector and the structure.
- circuit selected from the group comprising: a current conveyor of first, second or third generation,
- the subject of the invention is also a chain for detecting and measuring physical quantities, characterized in that it comprises such an amplification structure.
- FIG. 1 represents a block diagram illustrating the amplification structure according to the invention
- FIG. 2 represents a gain-frequency response curve for such a structure
- FIG. 3 represents a data table for different resistance and capacitance values
- FIG. 4 represents a curve illustrating the simulated output noise for different values of the detector's capacitance
- FIG. 5 illustrates the input experimental signal
- FIG. 6 illustrates the measured output signal
- the invention therefore relates to an amplification structure such as the charge preamplifier, in particular for a chain for detecting and measuring a signal coming from a capacitive sensor / detector, in particular but not exclusively radiation, within the scope of the invention.
- an amplification methodology using a current mode rather than a voltage mode approach is also known in the art.
- This structure determines a pre-amplifier based on the use for example of a current conveyor CCII whose output electronic noise is no longer dependent on the capacity of the detector and the input connections.
- this new structure has a wide bandwidth and can be used in a very wide range of capacitive sensor / sensor applications. It is particularly suitable for detection and radiation spectrometry where speed, sensitivity and energy resolution are the most relevant parameters. Semiconductor or gas detectors are also concerned.
- the pre-amplifier structure according to the invention comprises, as an example, a second generation current conveyor CCII designated by the general reference 1 according to the invention, which can also be designed having a big gain between the exit and the entrance.
- this current conveyor has a first input X of low impedance, a second input Y and at least one output Z.
- the first input X is connected to a signal source to be detected and measured, designated by the general reference 2 on this figure, while the second input Y is connected to ground.
- the output Z of the CCII is connected to a terminal of the output circuit having a resistor Rf and a capacitor Cf in parallel, the other terminal of this output circuit being connected to ground.
- the output signal Vout is recovered at the terminals of this output circuit.
- Input Y is high impedance while input X is low impedance and acts as a current input.
- Output Z is a current output.
- the gain and the 3 dB frequency are respectively Rf and 1 / (Rf.Cf).
- This configuration then defines a gain and bandwidth transimpedance amplifier controllable by the external elements Rf and Cf, as illustrated in FIGS. 2 and 3.
- the capacitance of the Cd detector does not interfere with the definition relation of the transfer function and does not affect so no noise output. This is because the detector is connected to the input X which is a virtual ground since the input Y is connected to ground.
- the first input X virtual ground
- the other terminal of the latter being connected to the ground
- the second input Y being connected to ground
- the output Z being connected to a terminal of an output circuit having a resistor and an output capacitor in parallel
- the other terminal of this output circuit being connected to ground and the output signal being recovered at the terminals of this output circuit
- the simulation results are shown in FIG. 4 as a function of the frequency for several values of the capacitance of the detector Cd and for values of Rf and Cf respectively of 32.8. kOhms and 20 pF. These results show the independence of the noise level vis-à-vis Cd in a frequency range below 100 kHz suitable for the intended applications.
- the pre-amplifier was made as part of a demonstrator.
- the input signal corresponds to a load of 875 Me- and 420 ns for 90% Q.
- the noise measurements were performed and the results are shown in the figure
- the invention makes it possible to overcome the influence of the capacity of the detector on the electronic noise of the measurement system.
- the size of the unit sensor can be increased, resulting in increased sensitivity without degradation of the noise level.
- the amplification circuit may be a circuit selected from the group consisting of:
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0950386A FR2941305B1 (fr) | 2009-01-22 | 2009-01-22 | Structure d'amplification et chaine de detection et de mesure comportant une telle structure. |
| PCT/FR2010/050075 WO2010084280A1 (fr) | 2009-01-22 | 2010-01-19 | Structure d'amplification et chaîne de détection et de mesure comportant une telle structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2389759A1 true EP2389759A1 (fr) | 2011-11-30 |
Family
ID=40984883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP10707938A Withdrawn EP2389759A1 (fr) | 2009-01-22 | 2010-01-19 | Structure d'amplification et chaîne de détection et de mesure comportant une telle structure |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP2389759A1 (fr) |
| FR (1) | FR2941305B1 (fr) |
| WO (1) | WO2010084280A1 (fr) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030001079A1 (en) | 2001-04-02 | 2003-01-02 | Christian Boemler | Current mode pixel amplifier |
| US7349017B2 (en) * | 2004-04-21 | 2008-03-25 | Avago Technologies Ecbu Ip Pte Ltd | Color sensor circuit with integrated programmable gain selection |
| JP2008527345A (ja) | 2005-01-06 | 2008-07-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電流増幅器を実装された画素 |
-
2009
- 2009-01-22 FR FR0950386A patent/FR2941305B1/fr not_active Expired - Fee Related
-
2010
- 2010-01-19 EP EP10707938A patent/EP2389759A1/fr not_active Withdrawn
- 2010-01-19 WO PCT/FR2010/050075 patent/WO2010084280A1/fr not_active Ceased
Non-Patent Citations (2)
| Title |
|---|
| None * |
| See also references of WO2010084280A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2941305B1 (fr) | 2011-05-20 |
| FR2941305A1 (fr) | 2010-07-23 |
| WO2010084280A1 (fr) | 2010-07-29 |
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| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Owner name: L'UNIVERSITE DE ARISTOTE THESSALONIQUE - COMITE DE |
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| 17Q | First examination report despatched |
Effective date: 20150715 |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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| 18D | Application deemed to be withdrawn |
Effective date: 20180828 |
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| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H04N 3/15 20060101ALI20100811BHEP Ipc: H04N 5/335 20110101AFI20100811BHEP |