EP2351085A2 - Method for producing infrared-photosensitive matrix cells adhering to an optically transparent substrate by molecular adhesion, and related sensor - Google Patents

Method for producing infrared-photosensitive matrix cells adhering to an optically transparent substrate by molecular adhesion, and related sensor

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Publication number
EP2351085A2
EP2351085A2 EP09797114A EP09797114A EP2351085A2 EP 2351085 A2 EP2351085 A2 EP 2351085A2 EP 09797114 A EP09797114 A EP 09797114A EP 09797114 A EP09797114 A EP 09797114A EP 2351085 A2 EP2351085 A2 EP 2351085A2
Authority
EP
European Patent Office
Prior art keywords
infrared
sensor
photodiodes
wafer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09797114A
Other languages
German (de)
French (fr)
Inventor
Arnaud Cordat
Hervé Sik
Stéphane DEMIGUEL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Original Assignee
Sagem Defense Securite SA
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Filing date
Publication date
Application filed by Sagem Defense Securite SA filed Critical Sagem Defense Securite SA
Publication of EP2351085A2 publication Critical patent/EP2351085A2/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a method of manufacturing infrared photosensitive matrix cells and the resulting component.
  • VI and in particular indium antimonide (InSb) have photodetection capabilities of the band of infrared wavelength of 3 to 5 ⁇ m very interesting for the development of infrared imaging sensors.
  • the manufacturing method comprises the following steps: Creation of the pixels in the form of a matrix of photodiodes in an InSb wafer with an initial thickness of about 650 ⁇ m and a diameter of about 75 mm (3 inches); depositing pure indium beads so that each photodiode is connected to one and only one indium ball; and, in parallel, creating the reading circuit on a silicon wafer, the reading circuit comprising contact zones according to a mirror matrix of the matrix of photodiodes; and deposit of pure indium beads; then the two slices having been processed, they are cut into matrices of photodiodes and reading circuits respectively which are assembled according to the so-called flip chip technique.
  • the "flip-chip" assembly technique is well known to those skilled in the art and will not be described in detail here.
  • glue is injected between the matrix of photodiodes and the reading circuit assembled and spaced about 10 microns.
  • the thickness of the slice of InSb is thinned to about 10 ⁇ m by mechanical polishing and / or chemical or any other technique.
  • This thickness allows good penetration of photons to the level of photodiodes without loss by recombination while limiting the effects of cross-talk by cross-scattering electrons / holes.
  • the thermal generation of electron / hole carriers prevents the InSb sensor from performing its photo detection function beyond a certain operating temperature. . Also the sensor must be cooled to a cryogenic temperature below 8OK.
  • the InSb layer must still be thinned within a range of 50 to 200 ⁇ m to account for the remaining free carrier uptake effects. At these thicknesses, breakage phenomena of the InSb layer continue to appear, although with a lower probability than for the components obtained according to the conventional method.
  • the constraints related to cooling can refer to the indium balls as happens in the case of matrices of infrared photodiodes based mercury-indium-tellurium material (HgCdTe) as described in patent FR 2 810 453.
  • HgCdTe mercury-indium-tellurium material
  • the epitaxial support slice HgCdTe is thinned or suppressed.
  • the support silicon wafer is replaced by a material such as gallium arsenide GaAs, germanium, or sapphire, whose thermal expansion is close to that of HgCdTe.
  • the robustness of this assembly against thermal variations is ensured by a method of bonding by molecular adhesion.
  • an object of the invention is an infrared radiation sensor manufacturing method comprising an infrared photodiode array formed in a first material and a read circuit formed in a second material.
  • the method comprises the steps of: - bonding by molecular adhesion of a wafer based on a first material on a wafer of material optically transparent to infrared radiation and having a coefficient of thermal expansion similar to that of the second material to more or less 20% close; thinning the thickness of the matrix based on the first material so that it is less than 25 ⁇ m; - Manufacture of sensitive photodiodes in the infrared on the slice based on the first material thus thinned; deposition of contact beads at infrared photodiodes; - Mounting the read circuit formed on the second material on the wafer based on the first material by flip chip technology.
  • This method advantageously makes it possible to use different materials for the transparent material as for the manufacturing wafer of the photodiodes having the required characteristics, the selection being able to be done according to other criteria such as cost, ease of implementation, etc.
  • the optically transparent material is silicon in the case of the current reading circuits but can extend to other materials, especially if the technologies of these circuits were to evolve towards other media, such as GaAs or phosphide of indium (InP).
  • the infrared photodiodes can be formed in InSb or in a detector layer of gallium antimonide (GaSb) - indium arsenide (InAs) superlattices.
  • This method may also comprise a prior epitaxial growth step of an antimony-based layer adapted to the formation of infrared photodiodes, said growth being carried out on an InSb or GaSb-based epitaxial support, and the thickness of the epitaxial layer being such that the thickness thinning step removes the entire epitaxial support.
  • Another object of the invention is the sensor resulting from the above method and as described in claim 8.
  • FIGS. 1A to 1F are schematic views of a method according to a method embodiment of the invention
  • FIGS. 2A and 2B are schematic views of a variant of the method of FIG. 1.
  • a silicon wafer 5 is also polished so that its lower surface 7 is perfectly flat and non-rough.
  • the surfaces 3 and 7 are then brought into contact via the silicon oxide atoms, FIG. 1B.
  • the quality of the surfaces is then such that the contact is established at distances of less than a few nanometers.
  • the attractive forces called Van der Waals forces between the two surfaces are high enough to cause molecular adhesion.
  • a heating of the whole is achieved then to create covalent bonds to strengthen the strength of the bonding between the two slices.
  • the heating temperature is between 400 and 1000 ° C. It should be noted that the heating step may be replaced by special bonding conditions such as vacuum bonding, preliminary plasma surface treatment etc.
  • the InSb wafer 1 is thinned to a thickness ranging from 5 to 25 ⁇ m by polishing, FIG. 1C, the wafer 5 serving as a support layer.
  • infrared photodiodes 9 are manufactured, FIG ID, according to conventional methods of microelectronics.
  • indium balls 11 are deposited at the height of the photodiodes, FIG. 1E, and a reading circuit 13 in silicon technology is welded according to the flip-chip technique, FIG.
  • the infrared radiation sensor comprises a plurality of infrared photodiodes 9 implanted in an active layer of InSb 1. On a first face of this active layer is bonded, by molecular bonding, a silicon wafer 5 and on the second face, the photodiodes are in electrical contact with the reading circuit 13 via the indium welds 11.
  • the molecularly bonded wafer to the InSb layer must be transparent to the infrared to allow infrared radiation to reach the photodiodes.
  • Silicon has this property. Indeed, silicon has a cutoff wavelength of 1.1 microns which allows it to be transparent especially to infrared radiation of the MWIR (Middle Wave Infrared) 3-5 ⁇ m and LWIR (Long Wave Infrared) 8-12 ⁇ m bands, but also those of the SWIR (Short Wave Infrared) band 1-2.7 ⁇ m. In addition, it makes it possible to counter the effects of thermal expansion since the read circuit also has a silicon support.
  • MWIR Middle Wave Infrared
  • LWIR Long Wave Infrared
  • the silicon where is bonded by molecular adhesion InSb, is able to accompany the mechanical stresses provided by the silicon of the reading circuit while protecting this thin layer of InSb, the electrical circuit of the reading circuit itself and the electrical connection of the indium balls.
  • any material transparent to infrared radiation and having a coefficient of thermal expansion close to that of the silicon of the reading circuit is adapted to serve as a support layer.
  • a coefficient of expansion equal to plus or minus 20% close to that of silicon so that it does not create, of itself, mechanical stresses on the thin active layer of InSb, the electrical circuit of read circuit itself and the electrical connection of the indium balls.
  • FIG. 2A we do growing, in a preliminary step, by epitaxy a layer of InSb 20 on the slice of InSb 1 then serving epitaxial support. This epitaxial growth is carried out to form a 5 to 25 ⁇ m layer of epitaxial InSb in which the photodiodes are manufactured, FIG. 2B.
  • the advantage of the epitaxial layer is to be of very good crystalline quality and with a perfectly controlled intrinsic doping level thus allowing a very good production efficiency.
  • This prior step of epitaxy has the advantage of also allowing an enlargement of the materials used.
  • the epitaxial support wafer being totally sacrificed, it can be replaced by other materials allowing the growth of an active layer.
  • it may be based on GaSb, for example.

Abstract

The invention relates to a method for producing an infrared radiation sensor, said sensor comprising an infrared photodiode array formed in a first material and a reading circuit formed in a second material, said method comprising the steps of: sticking, through molecular adhesion, a first material side surface (1) onto an optically transparent crystalline material side surface (5) having infrared radiation and a coefficient of thermal expansion similar to that of the second material, give or take 20%; thinning the body of the first material side surface so that the latter is less than 25 μm; producing infrared-sensitive photodiodes (9) onto the thus-thinned first material side surface; depositing contact ball bearings (11) onto the infrared photodiodes; and mounting the reading circuit (13) onto the first material side surface through flip chip technology.

Description

PROCEDE DE FABRICATION DE CELLULES MATRICIELLES PROCESS FOR PRODUCING MATRIX CELLS
PHOTOSENSIBLES DANS L' INFRAROUGE COLLEES PAR ADHESIONPHOTOSENSITIVE INFRARED ADHESION FIXED
MOLECULAIRE SUR SUBSTRAT OPTIQUEMENT TRANSPARENT ETMOLECULAR ON OPTICALLY TRANSPARENT SUBSTRATE AND
CAPTEUR ASSOCIE.ASSOCIATED SENSOR.
Domaine techniqueTechnical area
La présente invention concerne un procédé de fabrication de cellules matricielles photosensibles dans l'infrarouge et du composant résultant. Technique antérieureThe present invention relates to a method of manufacturing infrared photosensitive matrix cells and the resulting component. Prior art
Certains matériaux semi-conducteurs III-V ou II-Certain semiconductor materials III-V or II-
VI et en particulier 1 'antimoniure d'indium (InSb) ont des capacités de photo détection de la bande de longueur d'onde infrarouge de 3 à 5 μm très intéressante pour le développement de capteurs d'imagerie infrarouge.VI and in particular indium antimonide (InSb) have photodetection capabilities of the band of infrared wavelength of 3 to 5 μm very interesting for the development of infrared imaging sensors.
Actuellement ces capteurs se composent d'une tranche (« wafer ») d'InSb sur laquelle ont été fabriquées les cellules matricielles photosensibles et d'une tranche de silicium ou de matériaux équivalents servant de base à la technologie CMOS sur laquelle sont fabriqués les circuits de lecture.Currently, these sensors consist of an InSb wafer on which the photosensitive matrix cells and a wafer of silicon or equivalent materials have been made to form the basis of the CMOS technology on which the circuits are manufactured. reading.
Le procédé de fabrication comporte les étapes suivantes : - Création des pixels sous forme d'une matrice de photodiodes dans une tranche d'InSb d'épaisseur initiale d'environ 650μm et de diamètre d'environ 75 mm (3 pouces) ; dépôt de billes d'indium pur de telle sorte que chaque photodiode soit connectée à une et une seule bille d'indium ; et, en parallèle création du circuit de lecture sur une tranche de silicium, le circuit de lecture comportant des zones de contact selon une matrice en miroir de la matrice des photodiodes ; et dépôt de billes d'indium pur ; puis les deux tranches ayant été traitées, elles sont découpées en matrices de photodiodes et de circuits de lecture respectivement qui sont assemblés selon la technique dite de puce retournée (« flip chip ») . La technique d'assemblage « flip-chip » est bien connue de l'homme du métier et ne sera pas donc décrite en détail ici .The manufacturing method comprises the following steps: Creation of the pixels in the form of a matrix of photodiodes in an InSb wafer with an initial thickness of about 650 μm and a diameter of about 75 mm (3 inches); depositing pure indium beads so that each photodiode is connected to one and only one indium ball; and, in parallel, creating the reading circuit on a silicon wafer, the reading circuit comprising contact zones according to a mirror matrix of the matrix of photodiodes; and deposit of pure indium beads; then the two slices having been processed, they are cut into matrices of photodiodes and reading circuits respectively which are assembled according to the so-called flip chip technique. The "flip-chip" assembly technique is well known to those skilled in the art and will not be described in detail here.
Pour assurer la rigidité et la solidité mécanique de l'ensemble, ainsi que sa protection chimique, de la colle est injectée entre la matrice de photodiodes et le circuit de lecture assemblés et espacés d'environ 10 μm.To ensure the rigidity and mechanical strength of the assembly, as well as its chemical protection, glue is injected between the matrix of photodiodes and the reading circuit assembled and spaced about 10 microns.
Puis l'épaisseur de la tranche d'InSb est amincie à environ lOμm par polissage mécanique ou/et chimique ou toute autre technique.Then the thickness of the slice of InSb is thinned to about 10 μm by mechanical polishing and / or chemical or any other technique.
Cette épaisseur permet une bonne pénétration des photons jusqu'au niveau des photodiodes sans perte par recombinaison tout en limitant les effets de diaphonie (« cross-talk ») par diffusion transversale des électrons/trous .This thickness allows good penetration of photons to the level of photodiodes without loss by recombination while limiting the effects of cross-talk by cross-scattering electrons / holes.
Après cet amincissement, un antireflet est ajouté sur la couche d'InSb.After this thinning, an antireflection is added to the InSb layer.
Du fait de la petite largeur de bande interdite (« band gap ») de l'InSb, la génération thermique de porteurs électrons/trous empêche le capteur InSb d'assurer sa fonction de photo détection au-delà d'une certaine température de fonctionnement. Aussi le capteur doit être refroidi à une température cryogénique inférieure à 8OK.Due to the InSb's small band gap, the thermal generation of electron / hole carriers prevents the InSb sensor from performing its photo detection function beyond a certain operating temperature. . Also the sensor must be cooled to a cryogenic temperature below 8OK.
La différence de coefficient de dilatation entre le silicium et l'InSb fait que, lors du passage de la température ambiante à une température cryogénique, des contraintes mécaniques s'exercent sur la matrice d'InSb et, comme celle-ci est très fine, des fractures cristallines apparaissent pouvant aller jusqu'à la casse de la matrice.The difference in the coefficient of expansion between the silicon and the InSb makes that, during the passage from ambient temperature to a cryogenic temperature, mechanical stresses are exerted on the InSb matrix and, as this is very fine, fractures crystals appear that can go as far as the breakage of the matrix.
Il a été constaté que si l'épaisseur de la matrice InSb est maintenue à 650μm, celle-ci devient suffisamment résistante pour que les contraintes mécaniques liées au refroidissement ne génèrent pas de rupture .It has been found that if the thickness of the InSb matrix is maintained at 650 μm, it becomes sufficiently strong so that the mechanical stresses associated with cooling do not generate a break.
Aussi, pour résoudre ce problème de fragilité, il a été proposé de modifier le dopage de la tranche d'InSb pour qu'elle soit transparente aux rayonnements infrarouges par effet MOSS-BURSTEIN.Also, to solve this problem of fragility, it has been proposed to modify the doping of the slice of InSb so that it is transparent to infrared radiation by MOSS-BURSTEIN effect.
Cependant, cela nécessite alors de faire croitre une couche d'InSb par épitaxie, cette couche étant moins dopée pour y fabriquer les photodiodes. Enfin, la couche d'InSb doit quand même être amincie dans une fourchette de 50 à 200 μm pour tenir compte des effets d'absorption par porteurs libres subsistants. À ces épaisseurs, des phénomènes de casse de la couche InSb continuent d'apparaître, bien qu'avec une probabilité plus faible que pour les composants obtenus selon le procédé classique.However, this then necessitates increasing an InSb layer by epitaxy, this layer being less doped to manufacture the photodiodes. Finally, the InSb layer must still be thinned within a range of 50 to 200 μm to account for the remaining free carrier uptake effects. At these thicknesses, breakage phenomena of the InSb layer continue to appear, although with a lower probability than for the components obtained according to the conventional method.
Dans le cas d'une épaisseur d'InSb importante, les contraintes liées au refroidissement peuvent se reporter sur les billes d'indium comme cela se produit dans le cas des matrices de photodiodes infrarouge à base du matériau mercure-indium-tellure (HgCdTe) tel que décrit dans le brevet FR 2 810 453.In the case of a large thickness of InSb, the constraints related to cooling can refer to the indium balls as happens in the case of matrices of infrared photodiodes based mercury-indium-tellurium material (HgCdTe) as described in patent FR 2 810 453.
Dans ce document, la tranche support à l 'épitaxie HgCdTe est amincie, voire supprimée. Cependant, les contraintes mécano-thermiques pouvant aboutir à la rupture sont compensées au niveau du circuit de lecture. La tranche silicium support est remplacée par un matériau tel que l'arséniure de gallium GaAs, le germanium, ou le saphir, dont la dilatation thermique est proche de celle de l'HgCdTe. La robustesse de cet assemblage face aux variations thermiques est assurée par un procédé de collage par adhésion moléculaire.In this document, the epitaxial support slice HgCdTe is thinned or suppressed. However, the mechano-thermal constraints that can lead to breakage are compensated at the reading circuit. The support silicon wafer is replaced by a material such as gallium arsenide GaAs, germanium, or sapphire, whose thermal expansion is close to that of HgCdTe. The robustness of this assembly against thermal variations is ensured by a method of bonding by molecular adhesion.
Une autre solution pour contourner les problèmes de rupture sur les couches fines d'InSb consiste à coller un support optiquement transparent tel que décrit dans le brevet EP 0 485 115. Les contraintes mécano-thermiques sont en effet minimisées car le procédé de fabrication décrit permet d'aboutir à une matrice composée d'îlots de photodiodes séparées physiquement et interconnectées via une grille de métallisation . Cependant, ce procédé de fabrication reste très complexe et le composant résultant souffre d'une diminution du rendement quantique du fait d'un facteur de remplissage réduit par la grille de métallisation . De plus, ce procédé ne résoud pas les contraintes mécano-thermiques dans le cas classique d'une matrice de photodiodes présentes sur la même tranche d'InSb. Exposé de l'invention II serait donc particulièrement avantageux d'avoir un procédé de fabrication de capteurs d'image infrarouge qui soit peu coûteux et dont les composants obtenus aient une bonne résistance aux contraintes mécaniques générées par la mise à basse température. Aussi, un objet de l'invention est un procédé de fabrication de capteur de rayonnement infrarouge comportant un réseau de photodiodes infrarouge formé dans un premier matériau et un circuit de lecture formé dans un second matériau. Le procédé comporte les étapes de : - collage par adhésion moléculaire d'une tranche à base de premier matériau sur une tranche de matériau optiquement transparent aux rayonnements infrarouges et ayant un coefficient de dilatation thermique similaire à celui du second matériau à plus ou moins 20% près ; amincissement de l'épaisseur de la matrice à base de premier matériau de telle sorte que celle-ci soit inférieure à 25μm ; - fabrication de photodiodes sensibles dans l'infrarouge sur la tranche à base de premier matériau ainsi amincie ; dépôt de billes de contact au niveau des photodiodes infrarouges ; - montage du circuit de lecture formé sur le second matériau sur la tranche à base de premier matériau par la technologie de puce retournée.Another solution for circumventing the breaking problems on the thin layers of InSb is to bond an optically transparent support as described in patent EP 0 485 115. The mechano-thermal constraints are indeed minimized because the manufacturing method described allows to arrive at a matrix composed of islands of photodiodes separated physically and interconnected via a metallization grid. However, this manufacturing process remains very complex and the resulting component suffers from a decrease in quantum efficiency due to a reduced filling factor by the metallization grid. Moreover, this method does not solve the mechano-thermal constraints in the classical case of a matrix of photodiodes present on the same InSb wafer. SUMMARY OF THE INVENTION It would therefore be particularly advantageous to have a process for manufacturing infrared image sensors that is inexpensive and whose components obtained have good resistance to the mechanical stresses generated by the low temperature setting. Also, an object of the invention is an infrared radiation sensor manufacturing method comprising an infrared photodiode array formed in a first material and a read circuit formed in a second material. The method comprises the steps of: - bonding by molecular adhesion of a wafer based on a first material on a wafer of material optically transparent to infrared radiation and having a coefficient of thermal expansion similar to that of the second material to more or less 20% close; thinning the thickness of the matrix based on the first material so that it is less than 25 μm; - Manufacture of sensitive photodiodes in the infrared on the slice based on the first material thus thinned; deposition of contact beads at infrared photodiodes; - Mounting the read circuit formed on the second material on the wafer based on the first material by flip chip technology.
Ce procédé permet avantageusement d'utiliser différents matériaux pour le matériau transparent comme pour la tranche de fabrication des photodiodes ayant les caractéristiques requises, la sélection pouvant se faire selon d'autres critères tels que le coût, la facilité de mise en œuvre, etc.This method advantageously makes it possible to use different materials for the transparent material as for the manufacturing wafer of the photodiodes having the required characteristics, the selection being able to be done according to other criteria such as cost, ease of implementation, etc.
Le matériau optiquement transparent est du silicium dans le cas des circuits de lecture actuel mais peu s'étendre à d'autres matériaux, surtout si les technologies de ces circuits venaient à évoluer vers d'autres support, tels qu'en GaAs ou en phosphure d' indium ( InP) . Les photodiodes infrarouges peuvent être formées dans de l'InSb ou dans une couche détectrice en superréseaux d ' antimoniure de gallium (GaSb) - arséniure d' indium ( InAs) .The optically transparent material is silicon in the case of the current reading circuits but can extend to other materials, especially if the technologies of these circuits were to evolve towards other media, such as GaAs or phosphide of indium (InP). The infrared photodiodes can be formed in InSb or in a detector layer of gallium antimonide (GaSb) - indium arsenide (InAs) superlattices.
Ce procédé peut aussi comporter une étape préalable de croissance épitaxiale d'une couche à base d'antimoine adaptée à la formation des photodiodes infrarouges, ladite croissance étant réalisée sur un support épitaxial à base de InSb ou de GaSb, et l'épaisseur de la couche épitaxiale étant telle que l'étape d'amincissement d'épaisseur élimine la totalité du support épitaxial.This method may also comprise a prior epitaxial growth step of an antimony-based layer adapted to the formation of infrared photodiodes, said growth being carried out on an InSb or GaSb-based epitaxial support, and the thickness of the epitaxial layer being such that the thickness thinning step removes the entire epitaxial support.
Un autre objet de l'invention est le capteur résultant du procédé ci-dessus et tel que décrit dans la revendication 8.Another object of the invention is the sensor resulting from the above method and as described in claim 8.
Description sommaire des dessinsBrief description of the drawings
L'invention sera mieux comprise à la lecture de la description qui suit, donnée uniquement à titre d'exemple, et faite en référence aux figures en annexe dans lesquelles : les figures IA à IF sont des vues schématiques d'un procédé selon un mode de réalisation de l'invention ; et les figures 2A et 2B sont des vues schématiques d'une variante du procédé de la figure 1. Manières de réaliser l'inventionThe invention will be better understood on reading the description which follows, given solely by way of example, and with reference to the appended figures in which: FIGS. 1A to 1F are schematic views of a method according to a method embodiment of the invention; and FIGS. 2A and 2B are schematic views of a variant of the method of FIG. 1. Manners of Carrying Out the Invention
Dans les figures et la description, une même référence est utilisée pour désigner un élément identique ou similaire. En référence à la figure IA, une tranche d'InSbIn the figures and the description, the same reference is used to designate an identical or similar element. With reference to FIG. 1A, a slice of InSb
1 a sa surface supérieure 3 polie de façon à obtenir une surface parfaitement plane et non rugueuse et recouverte d'une fine couche d'oxyde de silicium 4.1 has its upper surface 3 polished so as to obtain a perfectly flat and non-rough surface and covered with a thin layer of silicon oxide 4.
En parallèle, une tranche de silicium 5 est également polie pour que sa surface inférieure 7 soit parfaitement plane et non rugueuse.In parallel, a silicon wafer 5 is also polished so that its lower surface 7 is perfectly flat and non-rough.
Les surfaces 3 et 7 sont alors mises en contact par l'intermédiaire des atomes d'oxyde de silicium, figure IB. La qualité des surfaces est alors telle que le contact s'établit à des distances inférieures à quelques nanomètres. Les forces attractives dites forces de Van der Waals entre les deux surfaces sont suffisamment élevées pour provoquer une adhérence moléculaire. Classiquement, un chauffage de l'ensemble est réalisé alors pour créer des liaisons covalentes permettant de renforcer la solidité du collage entre les deux tranches. Suivant les matériaux utilisés, la température de chauffage est comprise entre 400 et 10000C. Il est à noter que l'étape de chauffage peut être remplacée par des conditions de collage particulières comme un collage sous vide, un traitement de surface préliminaire par plasma, etc.The surfaces 3 and 7 are then brought into contact via the silicon oxide atoms, FIG. 1B. The quality of the surfaces is then such that the contact is established at distances of less than a few nanometers. The attractive forces called Van der Waals forces between the two surfaces are high enough to cause molecular adhesion. Classically, a heating of the whole is achieved then to create covalent bonds to strengthen the strength of the bonding between the two slices. Depending on the materials used, the heating temperature is between 400 and 1000 ° C. It should be noted that the heating step may be replaced by special bonding conditions such as vacuum bonding, preliminary plasma surface treatment etc.
Les deux tranches étant collées ensemble, la tranche InSb 1 est amincie jusqu'à une épaisseur allant de 5 à 25 μm par polissage, figure IC, la tranche de silicium 5 servant de couche de support.The two wafers being glued together, the InSb wafer 1 is thinned to a thickness ranging from 5 to 25 μm by polishing, FIG. 1C, the wafer 5 serving as a support layer.
Dans la couche amincie d'InSb, des photodiodes infrarouges 9 sont fabriquées, figure ID, selon les procédés classiques de micro-électronique.In the thinned layer of InSb, infrared photodiodes 9 are manufactured, FIG ID, according to conventional methods of microelectronics.
Puis toujours selon les procédés habituels bien connus, des billes d'indium 11 sont déposées à la hauteur des photodiodes, figure IE, et un circuit de lecture 13 en technologie silicium est soudée selon la technique de puce retournée, figure IF.Then, according to the usual well-known methods, indium balls 11 are deposited at the height of the photodiodes, FIG. 1E, and a reading circuit 13 in silicon technology is welded according to the flip-chip technique, FIG.
Ainsi, le capteur de rayonnement infrarouge comporte une pluralité de photodiodes infrarouges 9 implantées dans une couche active d'InSb 1. Sur une première face de cette couche active est collée, par collage moléculaire, une tranche de silicium 5 et sur la seconde face, les photodiodes sont en contact électrique avec le circuit de lecture 13 via les soudures d'indium 11.Thus, the infrared radiation sensor comprises a plurality of infrared photodiodes 9 implanted in an active layer of InSb 1. On a first face of this active layer is bonded, by molecular bonding, a silicon wafer 5 and on the second face, the photodiodes are in electrical contact with the reading circuit 13 via the indium welds 11.
On constate que dans cette structure, la tranche collée par collage moléculaire à la couche d'InSb doit être transparente à l'infrarouge pour permettre au rayonnement infrarouge de parvenir jusqu'aux photodiodes.It can be seen that in this structure, the molecularly bonded wafer to the InSb layer must be transparent to the infrared to allow infrared radiation to reach the photodiodes.
Or, le silicium a cette propriété. En effet, le silicium présente une longueur d'onde de coupure de 1,1 μm ce qui lui permet d'être transparent notamment aux rayonnements infrarouges des bandes MWIR (Middle Wave Infrared) 3-5 μm et LWIR (Long Wave Infrared) 8-12 μm, mais également à ceux de la bande SWIR (Short Wave Infrared) 1-2,7 μm. De plus, il permet de contrer les effets de la dilatation thermique puisque le circuit de lecture possède aussi un support en silicium.Silicon has this property. Indeed, silicon has a cutoff wavelength of 1.1 microns which allows it to be transparent especially to infrared radiation of the MWIR (Middle Wave Infrared) 3-5 μm and LWIR (Long Wave Infrared) 8-12 μm bands, but also those of the SWIR (Short Wave Infrared) band 1-2.7 μm. In addition, it makes it possible to counter the effects of thermal expansion since the read circuit also has a silicon support.
Ainsi, lors de la descente en température à 77K du composant, le silicium, où est collé par adhésion moléculaire l'InSb, est capable d'accompagner les contraintes mécaniques apportées par le silicium du circuit de lecture tout en protégeant cette fine couche d'InSb, le circuit électrique du circuit de lecture lui- même et la connexion électrique des billes d'indium.Thus, during the temperature drop to 77K of the component, the silicon, where is bonded by molecular adhesion InSb, is able to accompany the mechanical stresses provided by the silicon of the reading circuit while protecting this thin layer of InSb, the electrical circuit of the reading circuit itself and the electrical connection of the indium balls.
On conçoit que tout matériau transparent au rayonnement infrarouge et ayant un coefficient de dilatation thermique voisin de celui du silicium du circuit de lecture est adapté pour servir de couche de support. Par similaire, on entend un coefficient de dilatation égal à plus ou moins 20 % près à celui du silicium afin qu'il ne crée pas, de lui-même, des contraintes mécaniques sur la fine couche active d'InSb, le circuit électrique du circuit de lecture lui-même et la connexion électrique des billes d'indium. L'utilisation d'un matériau identique pour le support du circuit de lecture et pour la couche support transparente des photodiodes, à savoir le silicium, permet une minimisation des contraintes mécaniques.It is understood that any material transparent to infrared radiation and having a coefficient of thermal expansion close to that of the silicon of the reading circuit is adapted to serve as a support layer. By similar, we mean a coefficient of expansion equal to plus or minus 20% close to that of silicon so that it does not create, of itself, mechanical stresses on the thin active layer of InSb, the electrical circuit of read circuit itself and the electrical connection of the indium balls. The use of an identical material for the support of the reading circuit and for the transparent support layer of the photodiodes, namely silicon, allows a minimization of the mechanical stresses.
Il est à noter que si le circuit de lecture devait être implanté sur un matériau différent du silicium comme, par exemple, le GaAs pour, par exemple, des raisons de rapidité de commutation, le matériau de la couche transparente pourrait être également du GaAs qui est transparent aux longueurs d'onde infrarouge considérées . Dans une variante du procédé, fig. 2A, on fait croitre, dans une étape préliminaire, par épitaxie une couche d'InSb 20 sur la tranche d'InSb 1 servant alors de support épitaxial. Cette croissance épitaxiale est réalisée pour former une couche de 5 à 25 μm d'InSb épitaxiée dans laquelle les photodiodes sont fabriquées, fig. 2B.It should be noted that if the reading circuit were to be implanted on a material different from silicon, for example GaAs for, for example, reasons for switching speed, the material of the transparent layer could also be GaAs which is transparent to the infrared wavelengths considered. In a variant of the method, FIG. 2A, we do growing, in a preliminary step, by epitaxy a layer of InSb 20 on the slice of InSb 1 then serving epitaxial support. This epitaxial growth is carried out to form a 5 to 25 μm layer of epitaxial InSb in which the photodiodes are manufactured, FIG. 2B.
L'avantage de la couche épitaxiée est d'être de très bonne qualité cristalline et avec un niveau de dopage intrinsèque parfaitement contrôlé permettant ainsi un très bon rendement de fabrication.The advantage of the epitaxial layer is to be of very good crystalline quality and with a perfectly controlled intrinsic doping level thus allowing a very good production efficiency.
Lors de l'étape d'amincissement d'épaisseur, il est alors possible d'éliminer totalement la tranche de support épitaxial en ne gardant que la couche épitaxiée.During the thickness thinning step, it is then possible to totally eliminate the epitaxial support slice by keeping only the epitaxial layer.
Cette étape préalable d'épitaxie a l'avantage de permettre également un élargissement des matériaux utilisés .This prior step of epitaxy has the advantage of also allowing an enlargement of the materials used.
Ainsi la tranche de support épitaxial étant totalement sacrifiée, elle peut être remplacée par d'autres matériaux permettant la croissance d'une couche active. Ainsi, celle-ci peut être à base de GaSb, par exemple .Thus, the epitaxial support wafer being totally sacrificed, it can be replaced by other materials allowing the growth of an active layer. Thus, it may be based on GaSb, for example.
Il est également possible, pour éviter des dislocations de désaccord de paramètre de maille, de déposer sur le support épitaxial une couche tampon pour servir de support de croissance à la couche épitaxiée active .It is also possible, in order to avoid dislocations of mesh parameter mismatch, to deposit on the epitaxial support a buffer layer to serve as a growth support for the active epitaxial layer.
Celle-ci peut alors être composée d'InSb mais aussi d'autres matériaux à base d'antimoine connus pour leur capacité à détecter plus de bandes infrarouges, par exemple, un super-réseau à base de GaSb/InAs.This can then be composed of InSb but also other antimony-based materials known for their ability to detect more infrared bands, for example, a GaSb / InAs superlattice.
Il est également possible d'utiliser des matériaux de type mercure-cadmium-tellure HgCdTe.It is also possible to use mercury-cadmium-tellurium HgCdTe materials.
On a ainsi décrit un procédé de fabrication de capteurs infrarouges ainsi que le produit résultant de ce procédé permettant de répondre aux contraintes de fiabilité posées par l'utilisation à des températures cryogéniques . Thus, a method for manufacturing infrared sensors has been described, as well as the product resulting from this process making it possible to meet the constraints of reliability posed by use at cryogenic temperatures.

Claims

REVENDICATIONS
1. Procédé de fabrication de capteur de rayonnement infrarouge, ledit capteur comportant un réseau de photodiodes infrarouge formé dans un premier matériau et un circuit de lecture formé dans un second matériau, ledit procédé comportant les étapes de : - collage par adhésion moléculaire d'une tranche (1) à base du premier matériau sur une tranche (5) de matériau optiquement transparent aux rayonnements infrarouges et ayant un coefficient de dilatation thermique similaire à celui du second matériau à plus ou moins 20% près ; amincissement de l'épaisseur de la tranche à base du premier matériau de telle sorte que celle-ci soit inférieure à 25μm ; fabrication de photodiodes sensibles dans l'infrarouge (9) sur la tranche à base du premier matériau ainsi amincie ; dépôt de billes de contact (11) au niveau des photodiodes infrarouges ; montage du circuit de lecture (13) formé sur le second matériau sur la tranche à base du premier matériau par la technologie de puce retournée.1. A method of manufacturing an infrared radiation sensor, said sensor comprising an infrared photodiode array formed in a first material and a reading circuit formed in a second material, said method comprising the steps of: - bonding by molecular adhesion of a wafer (1) based on the first material on a wafer (5) of material optically transparent to infrared radiation and having a coefficient of thermal expansion similar to that of the second material within plus or minus 20%; thinning the thickness of the wafer based on the first material so that it is less than 25 μm; manufacturing infrared sensitive photodiodes (9) on the wafer based on the first material thus thinned; deposition of contact balls (11) at the infrared photodiodes; mounting the read circuit (13) formed on the second material on the wafer based on the first material by flip chip technology.
2. Procédé selon la revendication 1, caractérisé en ce que le matériau transparent est identique au second matériau.2. Method according to claim 1, characterized in that the transparent material is identical to the second material.
3. Procédé selon la revendication 2, caractérisé en ce que le second matériau est du silicium Si. 3. Method according to claim 2, characterized in that the second material is silicon Si.
4. Procédé selon la revendication 1, caractérisé en ce que le premier matériau est à base d'antimoine.4. Method according to claim 1, characterized in that the first material is antimony-based.
5. Procédé selon la revendication 4, caractérisé en ce que les photodiodes infrarouges sont formées dans de 1 ' antimoniure d'indium ou dans une couche détectrice en superréseaux d'antimoniure de gallium - arséniure d' indium.5. Method according to claim 4, characterized in that the infrared photodiodes are formed in indium antimonide or in a detector layer of gallium antimonide-indium arsenide superlattices.
6. Procédé selon la revendication 4, caractérisé en ce qu'il comporte l'étape préalable de croissance épitaxiale d'une couche à base d'antimoine adaptée à la formation des photodiodes infrarouges, ladite croissance étant réalisée sur un support épitaxial à base de d'antimoniure d'indium ou d'antimoniure de gallium, et l'épaisseur de la couche épitaxiale étant telle que l'étape d'amincissement d'épaisseur élimine la totalité du support épitaxial.6. Method according to claim 4, characterized in that it comprises the prior step of epitaxial growth of an antimony-based layer adapted to the formation of infrared photodiodes, said growth being carried out on an epitaxial support based on indium antimonide or gallium antimonide, and the thickness of the epitaxial layer being such that the thickness thinning step removes the entire epitaxial support.
7. Procédé selon la revendication 1, caractérisé en ce que le premier matériau est à base de mercure- cadmium-tellure HgCdTe7. Method according to claim 1, characterized in that the first material is based on mercury-cadmium-tellurium HgCdTe
8. Capteur de rayonnement infrarouge comportant une pluralité de photodiodes infrarouges (9) dans une couche active (1) formée dans un premier matériau, ladite couche active ayant une première face et une seconde face et chaque photodiode étant en contact sur la seconde face avec un circuit de lecture formé dans un second matériau (13) via une connexion conductrice (11) et recevant le rayonnement infrarouge via la première face, caractérisé en ce qu'une tranche (5) de matériau optiquement transparent au rayonnement infrarouge est collé par adhésion moléculaire sur ladite première face, ledit matériau optiquement transparent ayant un coefficient de dilatation thermique similaire à celui du second matériau à plus ou moins 20%.An infrared radiation sensor comprising a plurality of infrared photodiodes (9) in an active layer (1) formed in a first material, said active layer having a first face and a second face and each photodiode being in contact on the second face with a read circuit formed in a second material (13) via a conductive connection (11) and receiving the infrared radiation via the first face, characterized in that a wafer (5) of material optically transparent to infrared radiation is adhesively bonded said first face, said optically transparent material having a coefficient of thermal expansion similar to that of the second material at plus or minus 20%.
9. Capteur selon la revendication 8, caractérisé en ce que le matériau transparent est identique au second matériau .9. Sensor according to claim 8, characterized in that the transparent material is identical to the second material.
10. Capteur selon la revendication 9, caractérisé en ce que le second matériau est du silicium Si.10. Sensor according to claim 9, characterized in that the second material is silicon Si.
11. Capteur selon la revendication 8, caractérisé en ce que le premier matériau est à base d'antimoine .11. The sensor of claim 8, characterized in that the first material is antimony-based.
12. Capteur selon la revendication 11, caractérisé en ce que la couche active est composée d'antimoniure d'indium ou d'un super-réseau d'antimoniure de gallium-arséniure d'indium.12. Sensor according to claim 11, characterized in that the active layer is composed of indium antimonide or a gallium antimonide superlattice-indium arsenide.
13. Capteur selon la revendication 8, caractérisé en ce que la couche active est une couche créée par croissance épitaxiale.13. The sensor of claim 8, characterized in that the active layer is a layer created by epitaxial growth.
14. Capteur selon la revendication 8, caractérisé en ce que le premier matériau est à base de mercure- cadmium-tellure HgCdTe. 14. Sensor according to claim 8, characterized in that the first material is based on mercury-cadmium-tellurium HgCdTe.
EP09797114A 2008-11-27 2009-11-27 Method for producing infrared-photosensitive matrix cells adhering to an optically transparent substrate by molecular adhesion, and related sensor Withdrawn EP2351085A2 (en)

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FR2938973A1 (en) 2010-05-28
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FR2938973B1 (en) 2011-03-04
WO2010061151A3 (en) 2011-11-17
US20110233609A1 (en) 2011-09-29
IL213085A0 (en) 2011-07-31

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