EP2256752A3 - Millimeterwellen-Transformator mit hohem Umwandlungskoeffizienten und geringen Einfügungsverlusten - Google Patents

Millimeterwellen-Transformator mit hohem Umwandlungskoeffizienten und geringen Einfügungsverlusten Download PDF

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Publication number
EP2256752A3
EP2256752A3 EP10164168A EP10164168A EP2256752A3 EP 2256752 A3 EP2256752 A3 EP 2256752A3 EP 10164168 A EP10164168 A EP 10164168A EP 10164168 A EP10164168 A EP 10164168A EP 2256752 A3 EP2256752 A3 EP 2256752A3
Authority
EP
European Patent Office
Prior art keywords
wave transformer
transformation ratio
low insertion
insertion losses
high transformation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10164168A
Other languages
English (en)
French (fr)
Other versions
EP2256752B1 (de
EP2256752A2 (de
Inventor
Didier Belot
Bernardo Leite
Eric Kerherve
Jean-Baptiste Begueret
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
STMicroelectronics SA
Original Assignee
Centre National de la Recherche Scientifique CNRS
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, STMicroelectronics SA filed Critical Centre National de la Recherche Scientifique CNRS
Publication of EP2256752A2 publication Critical patent/EP2256752A2/de
Publication of EP2256752A3 publication Critical patent/EP2256752A3/de
Application granted granted Critical
Publication of EP2256752B1 publication Critical patent/EP2256752B1/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Coils Of Transformers For General Uses (AREA)
EP10164168A 2009-05-27 2010-05-27 Millimeterwellen-Transformator mit hohem Umwandlungskoeffizienten und geringen Einfügungsverlusten Not-in-force EP2256752B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0953496 2009-05-27

Publications (3)

Publication Number Publication Date
EP2256752A2 EP2256752A2 (de) 2010-12-01
EP2256752A3 true EP2256752A3 (de) 2011-01-05
EP2256752B1 EP2256752B1 (de) 2012-05-23

Family

ID=41796399

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10164168A Not-in-force EP2256752B1 (de) 2009-05-27 2010-05-27 Millimeterwellen-Transformator mit hohem Umwandlungskoeffizienten und geringen Einfügungsverlusten

Country Status (2)

Country Link
US (1) US20100301987A1 (de)
EP (1) EP2256752B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576605B (zh) * 2009-11-17 2016-01-20 马维尔国际贸易有限公司 接地屏蔽电容器
US8836078B2 (en) 2011-08-18 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically oriented inductor within interconnect structures and capacitor structure thereof
US8675368B2 (en) 2011-08-18 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically oriented semiconductor device and shielding structure thereof
US8791784B2 (en) * 2011-08-18 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically oriented semiconductor device and shielding structure thereof
DE102013101768A1 (de) * 2013-02-22 2014-08-28 Intel Mobile Communications GmbH Transformator und elektrische Schaltung
CN103353905B (zh) * 2013-05-07 2015-12-02 江苏大学 一种毫米波宽边耦合集成变压器的高精度模型建立方法
FR3038121B1 (fr) * 2015-06-25 2017-08-18 Thales Sa Transformateur ameliore pour un circuit en technologie mmic
JP2017085239A (ja) * 2015-10-23 2017-05-18 株式会社東芝 インダクティブ結合システム及び通信システム
CN111884606A (zh) * 2020-06-22 2020-11-03 南京迈矽科微电子科技有限公司 基于毫米波变压器的宽带匹配电路及毫米波功率放大电路

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516415A2 (de) * 1991-05-31 1992-12-02 Kabushiki Kaisha Toshiba Flachtransformateur
WO1997016836A1 (en) * 1995-10-31 1997-05-09 The Whitaker Corporation Rf transformer using multilayer metal polymer structures
DE20022015U1 (de) * 2000-12-29 2001-03-01 Vogt Electronic Ag Planarkerntransformator
DE10105696A1 (de) * 2001-02-08 2002-08-14 Rohde & Schwarz Symmetrierübertrager
US20070216509A1 (en) * 2006-03-14 2007-09-20 Albert Kuo Huei Yen Metal-insulator-metal transformer and method for manufacturing the same
US20080174396A1 (en) * 2007-01-24 2008-07-24 Samsung Electronics Co., Ltd. Transformers and baluns
US20080284553A1 (en) * 2007-05-18 2008-11-20 Chartered Semiconductor Manufacturing, Ltd. Transformer with effective high turn ratio

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213530A (ja) * 1996-01-30 1997-08-15 Alps Electric Co Ltd 平面トランス
FR2802649B1 (fr) * 1999-12-17 2002-02-08 Commissariat Energie Atomique Micromagnetometre a porte de flux a detection perpendiculaire et son procede de realisation
US6480086B1 (en) * 1999-12-20 2002-11-12 Advanced Micro Devices, Inc. Inductor and transformer formed with multi-layer coil turns fabricated on an integrated circuit substrate
US6927664B2 (en) * 2003-05-16 2005-08-09 Matsushita Electric Industrial Co., Ltd. Mutual induction circuit
TWI280593B (en) * 2005-06-16 2007-05-01 Via Tech Inc Inductor
US7489220B2 (en) * 2005-06-20 2009-02-10 Infineon Technologies Ag Integrated circuits with inductors in multiple conductive layers
US7570144B2 (en) * 2007-05-18 2009-08-04 Chartered Semiconductor Manufacturing, Ltd. Integrated transformer and method of fabrication thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516415A2 (de) * 1991-05-31 1992-12-02 Kabushiki Kaisha Toshiba Flachtransformateur
WO1997016836A1 (en) * 1995-10-31 1997-05-09 The Whitaker Corporation Rf transformer using multilayer metal polymer structures
DE20022015U1 (de) * 2000-12-29 2001-03-01 Vogt Electronic Ag Planarkerntransformator
DE10105696A1 (de) * 2001-02-08 2002-08-14 Rohde & Schwarz Symmetrierübertrager
US20070216509A1 (en) * 2006-03-14 2007-09-20 Albert Kuo Huei Yen Metal-insulator-metal transformer and method for manufacturing the same
US20080174396A1 (en) * 2007-01-24 2008-07-24 Samsung Electronics Co., Ltd. Transformers and baluns
US20080284553A1 (en) * 2007-05-18 2008-11-20 Chartered Semiconductor Manufacturing, Ltd. Transformer with effective high turn ratio

Also Published As

Publication number Publication date
EP2256752B1 (de) 2012-05-23
US20100301987A1 (en) 2010-12-02
EP2256752A2 (de) 2010-12-01

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