EP2204347B1 - Struktur mit Getterschicht und einer Teilschicht zur Anpassung der Aktivierungstemperatur sowie Herstellungsverfahren - Google Patents
Struktur mit Getterschicht und einer Teilschicht zur Anpassung der Aktivierungstemperatur sowie Herstellungsverfahren Download PDFInfo
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- EP2204347B1 EP2204347B1 EP10158202.1A EP10158202A EP2204347B1 EP 2204347 B1 EP2204347 B1 EP 2204347B1 EP 10158202 A EP10158202 A EP 10158202A EP 2204347 B1 EP2204347 B1 EP 2204347B1
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- getter
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- adjustment
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- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 11
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- 238000000151 deposition Methods 0.000 claims description 7
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000004320 controlled atmosphere Methods 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 2
- 239000004411 aluminium Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 7
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- 238000010168 coupling process Methods 0.000 abstract 1
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- 239000010936 titanium Substances 0.000 description 16
- 229910052719 titanium Inorganic materials 0.000 description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 11
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- 239000011347 resin Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
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- 239000007789 gas Substances 0.000 description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
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- 230000001590 oxidative effect Effects 0.000 description 6
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
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- 238000000206 photolithography Methods 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 230000008929 regeneration Effects 0.000 description 4
- 238000011069 regeneration method Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000013626 chemical specie Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000986 non-evaporable getter Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Definitions
- the object of the invention is to provide a structure in which the getter has optimum pumping capacity in a desired temperature range.
- the subject of the invention is also a process for producing such a structure as well as a capture method in a closed cavity.
- the second substrate 4 is, for example, silicon, oxidized silicon or nitride or glass.
- the first substrate 2 is, for example, silicon or any other semiconductor material, with the exception of gallium arsenide (GaAs), or else another material on which a device already formed can be integrated.
- GaAs gallium arsenide
- the cavity comprises at least two getters 6, on at least one of its internal walls.
- Each getter 6 is of multilayer type and comprises at least one adjustment sub-layer 8 located between one of the substrates 2 or 4 and a getter layer 7 which conventionally constitutes the adsorbent and / or absorbent layer.
- the getter layer 7 is, for example, a metal material chosen, preferably, so as to have a high nitrogen pumping capacity, this gas is commonly used during the encapsulation of the devices.
- the getters 6 have, between them, different activation temperatures, it is advantageous to distinguish them for example in getters 6a and additional getters 6b ( Figures 3 and 4 ) or first 6a and second 6b getters.
- the getter 6 is formed on the substrate 2.
- An attachment sub-layer 9 is advantageously deposited on the substrate 2 before the adjustment sub-layer 8.
- the underlayer 9 is intended to allow better adhesion of the adjustment sub-layer 8 to the substrate 2.
- the underlayer 9 is typically made by any suitable technique, for example titanium or zirconium and has a thickness advantageously included between 20 and 100 nm.
- the adjustment sub-layer 8, located beneath and in contact with the getter layer 7, is intended to make it possible to modulate the activation temperature of the getter layer, that is to say to modulate the temperature at which the getter layer reacts with the atmosphere present inside the cavity.
- the adjustment sub-layer 8 is preferably Cu, Ni, Pt, Ag, Ru, Cr, Au, Al and has a thickness of preferably between 50 and 500 nm when the thickness of the getter layer 7a is of the order of several hundred nanometers, typically between 100 and 2000 nm.
- the thickness of the adjustment sub-layer may be reduced to a few tens of nanometers, typically between 10 and 90 nm, when the getter layer 7a is a few hundred nanometers, typically between 100 and 900 nm.
- an adjustment sub-layer 8 of 30 nm is sufficient for a getter layer 7a of 300 nm.
- the minimum thickness of the adjustment sub-layer 8 is approximately between 5% and 10% of the thickness of the getter layer 7a, for example equal to 8%.
- the adjustment sub-layer 8 is, for example, made of a metallic material, with the exception of palladium, deposited in the form of a pure body which, like platinum, for example, is chemically neutral vis-à-vis -vis the getter layer 7 in the desired activation domain.
- the adjustment sub-layer 8 can also be made of a material that becomes neutral or becomes a trap for certain chemical species, for example oxygen, after interaction with the getter layer 7.
- the adjustment sub-layer 8 may also be of a material which has a high chemical affinity for one or more chemical elements among carbon, oxygen and nitrogen.
- the underlayer may, for example, be chromium or aluminum. In the latter case, the aluminum underlayer 8 serves to protect the getter layer 7 when it is exposed to the ambient air, thus increasing the storage time of the getter without altering its properties, because the underlayment 8 avoids the growth of an oxide layer.
- This architecture is particularly advantageous for obtaining constant pumping capacities after exposure to ambient air for several months.
- Activation temperature a getter stack consisting of an aluminum adjustment sub-layer 8 and a titanium getter layer 7a is of the order of 400 ° C.
- a regeneration pre-treatment can easily be implemented.
- the regeneration pretreatment consists in exposing the getter under a secondary vacuum, advantageously at a pressure of the order of 10 -7 mbar or under a partial pressure of a neutral gas not absorbed by the getter and at a temperature close to its activation temperature for a period that allows it to absorb the layer that degrades its pumping capacity.
- the getter is then cooled to room temperature, typically a temperature close to 20 ° C.
- the getter before it is exposed to ambient air, the getter is exposed to a known gas, preferably nitrogen, which is adsorb on the surface and thus temporarily protect the getter vis-à-vis the ambient air.
- a temperature of 350 ° C. is applied for a few hours to regenerate all the getters 6a described in the present invention.
- sacrificial getters deposited on the entire surface of a substrate.
- the sacrificial getter is chosen to have an activation temperature lower than that of the getter 6 (or getters 6a, 6b) which must be processed during the regeneration pre-treatment.
- the sacrificial getter is then used to improve the quality of the vacuum in the enclosure.
- the getters can thus be subjected to oxidizing atmospheres with which they react and then be regenerated as described above.
- these oxidizing atmospheres are generated during technological steps, in particular the steps of removing a sacrificial layer of polymer resin.
- the getter material 7 is subjected to such oxidizing atmospheres.
- the getter 6a and the device 3 are encapsulated by a sacrificial resin 12 and then by an encapsulation layer 11.
- the sacrificial resin is shaped, for example, by heating before the deposition of the encapsulation layer 11.
- the device and the getter are released from the sacrificial resin layer 12 from orifices made in the encapsulation layer 11.
- the sacrificial resin 12 may be a standard resin of positive polarity used in photolithography and or a resin of negative polarity of polyimide type. These resins can both be destroyed with a heat treatment in an oxidizing atmosphere. It is therefore particularly interesting to choose a getter 6 composed of at least one underlayer 8 and at least one getter layer 7 such that the activation temperature is greater than the baking temperature of the sacrificial resin. In this way, it avoids polluting the getter by the contaminants from the polymer and thus reduce or even cancel its pumping capacity.
- the getter materials are generally exposed to a generally oxidizing dry process in order to improve the propensity of the substrate on which the getter is deposited at the direct sealing. This treatment thus contributes to increasing the adhesion energy between the two substrates which delimit the cavity when they come into contact.
- a protective layer 10 made of chromium is then recommended.
- the choice of a getter 6a based activation temperature preferably less than 300 ° C, allows both to consolidate the seal and activate the getter at a temperature close to 400 ° C. Thus, the getter is activated during the consolidation consolidation treatment between the two substrates.
- a ruthenium underlayer 8 could by its microstructure ( preferential germination of the getter layer 7 at grain boundaries, triple knots or between the domes of the underlying structure) and / or its high melting temperature limit the surface migration of the getter metal and thus lead to a structure of this ci thinner than in the opposite case or the getter layer 7 is deposited on aluminum.
- the getters 6 can be divided into at least getters 6a and additional getters 6b.
- the getter comprises a getter layer 7 constituted by at least two elementary layers 7a and 7b.
- the adjustment sub-layer of the getter 6a has, for example, a grain structure greater than the portion of the adjustment sub-layer of the additional getter 6b.
- the grains of the adjustment sub-layer 8 of the getter 6a are larger than the grains of the adjustment sub-layer 8 of the additiohnel getter 6b.
- Table 1 gives, by way of example, a few values of activation temperature of a getter 6 according to the nature of its adjustment sub-layer 8, for a getter layer 7 made of titanium. All deposits are made by evaporation on a silicon substrate at an identical elaboration temperature Te, close to the ambient temperature. Nature of the adjustment sub-layer 8 Activation temperature Ru 275 ° C Cr 300 ° C Pt 325 ° C Or 350 ° C At 365 ° C Cu 375 ° C Ag 380 ° C al 400 ° C
- the microstructure of the zirconium deposit must be finer than that of titanium.
- the activation temperatures presented in Table 1 should therefore be substantially lower with a zirconium getter sublayer than with a titanium getter layer.
- the use of two different elementary getter layers 7a, 7b is particularly advantageous for repackaging the chip during its lifetime by activation of the first layer 7a.
- the adjustment sub-layer 8 of the multilayer getter may be chosen so as to increase the reflectivity of the getter to infrared radiation, typically when the getter is chosen to be a reflector for infrared radiation (for certain specific applications).
- This reflective function is advantageously chosen, depending in particular on the nature of the material of the adjustment sub-layer 8 which is advantageously made of copper or aluminum. For example, in a bolometer, this reflectivity is sufficient to place the getter as an IR reflector.
- the getter 6 has another essential function: IR reflector. If the layer is made of titanium, it already has some reflectivity to infrared radiation. The use of an undercoat adapted adjustment then makes it possible to increase the reflectivity to the infrared radiation to the entire getter.
- the multilayer getter 6 comprising at least the adjustment sub-layer 8, the getter layer 7 and possibly the underlayer 9 can be made anywhere in the cavity and for example on the substrate 2 or 4 before or after formation of the microelectronic device 3. Such a getter 6 can also be formed on the two substrates 2 and 4 delimiting the cavity.
- the anchoring sub-layer 9 is advantageously deposited by any suitable technique, preferably by evaporation on the substrate 2.
- the adjustment sub-layer 8 and then the first and second elementary getter layers (7a, 7b) are then deposited successively. , advantageously by evaporation, on the attachment sub-layer 9.
- the deposits of the different layers are made within the same deposition equipment.
- the attachment sub-layer 9 can contribute to improving the quality of the vacuum in this deposition chamber, when the material forming this layer (for example Ti or Zr) has getter properties.
- the getter 6 can be structured in a conventional manner, for example by lithography and dry etching, advantageously by a non-reactive plasma and / or wet, so as to precisely locate the areas in which the getter layers 7 are desired.
- the adhesion of the positive resin used for the lithography on the getter layer 7 can be improved, if necessary, by providing an adhesion promoter, advantageously hexamethyldisilazane (HDMS).
- HDMS hexamethyldisilazane
- the layers 7, 8, 9 and 10 are etched from usual liquid chemical reagents and / or by a neutral plasma depending on the materials used.
- a neutral plasma depending on the materials used.
- the two etching modes can also be used when there is incompatibility between the etching reagents of the different layers. This incompatibility can lead to phenomena of over-etching or even alteration of certain layers.
- the step of removing the positive resin and optionally all or part of the promoter may be performed by a conventional product used in the microelectronics industry and advantageously followed by cleaning with fuming nitric acid, when the latter does not affect the underlayer 8. Finally, a dry etching with a non-reactive plasma allows, if necessary, to eliminate pollutants or residues from previous technological steps and present on the surface of the getter layer 7.
- the production methods described above it is possible to successively produce several getters 6, having different activation temperatures on the same substrate and / or in the same cavity.
- the structuring of the getter 6 is performed by chemical etching, it is advantageous to deposit and structure the different sub-layers 8 adjustment of different getters.
- the getter layer 7 is then deposited and then structured by chemical etching. Since the adjustment layer 8 and the getter layer 7 are not made immediately afterwards and in the same equipment, it is preferable to use a regeneration pre-treatment as described above.
- the pumping capacity of each getter in terms of the number of moles adsorbed or absorbed can be controlled, which makes it possible to modulate the pressure inside the cavity that contains the getters.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Bipolar Transistors (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Claims (15)
- Verfahren zur Erstellung eines ersten Getters (6a) und eines zusätzlichen Getters (6b), umfassend:die Bereitstellung eines Substrats (2) oder einer Verschlusskappe (4) mit einer ersten Anpassungsunterschicht aus einem ersten Material und einer zweiten Anpassungsunterschicht aus einem zweiten Material,- Abscheiden einer Getterschicht (7) aus einem ersten Gettermaterial auf der ersten Anpassungsunterschicht und auf der zweiten Anpassungsunterschicht, um den ersten Getter (6a) bzw. den zusätzlichen Getter (6b) auszubilden,Verfahren, dadurch gekennzeichnet, dass die Getterschicht (7) des ersten Getters (6a) eine andere kristalline Mikrostruktur als die Getterschicht (7) des zusätzlichen Getters (6b) aufweist, um einen ersten Getter (6a) mit einer von der Aktivierungstemperatur des zusätzlichen Getters (6b) abweichenden ersten Aktivierungstemperatur zu bilden, und dass es die Bildung eines geschlossenen Raums mittels des Substrats (2) und der Verschlusskappe (4) umfasst, wobei wenigstens eine Vorrichtung (3) in dem geschlossenen Hohlraum angeordnet ist.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass das erste Material der ersten Anpassungsunterschicht (8) sich von dem zweiten Material der zweiten Anpassungsunterschicht (8) unterscheidet, wobei die erste Anpassungsunterschicht (8) eine andere kristalline Mikrostruktur als die zweite Anpassungsunterschicht (8) aufweist.
- Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass das erste Material der ersten Anpassungsunterschicht (8) mit dem zweiten Material der zweiten Anpassungsunterschicht (8) identisch ist, wobei die erste Anpassungsunterschicht (8) eine andere kristalline Mikrostruktur als die zweite Anpassungsunterschicht (8) aufweist.
- Verfahren nach Anspruch 3, dadurch gekennzeichnet, dass die erste Anpassungsunterschicht (8) und die zweite Anpassungsunterschicht (8) bei unterschiedlichen Temperaturen hergestellt werden, so dass die erste und die zweite Anpassungsunterschicht (8) unterschiedliche kristalline Mikrostrukturen aufweisen.
- Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die Getterschicht (7) gleichzeitig auf der ersten Anpassungsunterschicht (8) und auf der zweiten Anpassungsunterschicht (8) abgeschieden wird.
- Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass das erste Material der ersten Anpassungsunterschicht (8) und/oder das zweite Material der zweiten Anpassungsunterschicht (8) aus Ru Cr, Pt, Ni, Cu, Al, Ag und Au ausgewählt sind.
- Verfahren nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die erste Anpassungsunterschicht (8) bei einer ersten Herstellungstemperatur gebildet wird, wobei das Verhältnis zwischen der ersten Herstellungstemperatur und der Schmelztemperatur der ersten Anpassungsunterschicht (8) im Wesentlichen zwischen 0,1 und 0,3 liegt.
- Verfahren nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass es die Bildung einer Chromschutzschicht (10) auf wenigstens dem ersten Getter (6a) umfasst.
- Verfahren nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass die Vorrichtung (3) ein Bolometer ist, bei dem die erste Anpassungsunterschicht (8) aus Kupfer oder aus Aluminium besteht und bei dem der erste Getter (6a) derart angeordnet ist, dass es wenigstens einen Teil einer auf das Bolometer auftreffenden Strahlung reflektiert.
- Struktur umfassend:- einen geschlossenen Hohlraum unter kontrollierter Atmosphäre, wobei der Hohlraum durch ein Substrat und eine Verschlusskappe begrenzet ist,- wenigstens eine Vorrichtung (3), die in dem geschlossenen Hohlraum angeordnet ist,- einen ersten Getter (6a), der durch eine Getterschicht aus erstem Gettermaterial, die auf einer ersten Anpassungsunterschicht (8) aus erstem Material abgeschieden ist, gebildet ist,Struktur, dadurch gekennzeichnet, dass:- wenigstens einen zusätzlichen Getter (6b) durch eine Getterschicht aus erstem Gettermaterial, die auf einer zweiten Anpassungsunterschicht (8) aus zweitem Material abgeschieden ist, gebildet ist,- der erste Getter (6a) und der zusätzliche Getter (6b) in dem geschlossenen Hohlraum angeordnet sind und unterschiedliche Aktivierungstemperaturen aufweisen,- jede Anpassungsunterschicht (8) zwischen der Getterschicht (7), auf der sie gebildet ist, und dem Substrat (2) und/oder der Verschlusskappe (4, 11) gelegen ist,- die Getterschicht des ersten Getters (6a) eine andere kristalline Mikrostruktur als die Getterschicht (6b) des zusätzlichen Getters (6b) aufweist.
- Struktur nach Anspruch 10, dadurch gekennzeiehnet, dass das erste Material der ersten Anpassungsunterschicht (8) von dem zweiten Material der zweiten Anpassungsunterschicht (8) abweicht, wobei die erste Anpassungsunterschicht (8) eine andere kristalline Mikrostruktur als die zweite Anpassungsunterschicht (8) aufweist.
- Struktur nach Anspruch 10, dadurch gekennzeichnet, dass das erste Material der ersten Anpassungsunterschicht (8) mit dem zweiten Material der zweiten Anpassungsunterschicht (8) identisch ist, wobei die erste Anpassungsunterschicht (8) eine andere kristalline Mikrostruktur als die zweite Anpassungsunterschicht (8) aufweist.
- Struktur nach einem der Ansprüche 10 bis 12, dadurch gekennizeichnet, dass das erste Material der ersten Anpassungsunterschicht (8) und/oder das zweite Material der zweiten Anpassungsunterschicht (8) aus Ru, Cr, Pt, Ni, Cu, Al, Ag und Au ausgewählt sind.
- Struktur nach einem der Ansprüche 10 bis 13, dadurch gekennzeichnet, dass die Vorrichtung (3) ein Bolometer ist, bei dem die Anpassungsunterschicht (8) aus Kupfer oder aus Aluminium besteht und bei dem der erste Getter (6a) derart angeordnet ist, dass es wenigstens einen Teil einer auf das Bolometer auftreffenden Strahlung reflektiert.
- Verfahren zum Auffangen in einem geschlossenen Hohlraum, dadurch gekennzeichnet, dass es umfasst:- Bereitstellen einer Struktur nach einem der Ansprüche 10 bis 14,- Aktivieren des ersten Getters (6a) bei der ersten Aktivierungstemperatur,- Aktivieren des zusätzlichen Getters (6b) bei einer zweiten Aktivierungstemperatur, die höher als die erste Aktivierungstemperatur ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0707212A FR2922202B1 (fr) | 2007-10-15 | 2007-10-15 | Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. |
EP08869876A EP2197780B1 (de) | 2007-10-15 | 2008-10-09 | Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung |
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EP08869876.6 Division | 2008-10-09 | ||
EP08869876A Division EP2197780B1 (de) | 2007-10-15 | 2008-10-09 | Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung |
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EP2204347A1 EP2204347A1 (de) | 2010-07-07 |
EP2204347B1 true EP2204347B1 (de) | 2016-03-30 |
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EP10158202.1A Active EP2204347B1 (de) | 2007-10-15 | 2008-10-09 | Struktur mit Getterschicht und einer Teilschicht zur Anpassung der Aktivierungstemperatur sowie Herstellungsverfahren |
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US (2) | US8605445B2 (de) |
EP (2) | EP2197780B1 (de) |
JP (1) | JP5431343B2 (de) |
AT (1) | ATE497481T1 (de) |
CA (1) | CA2701363A1 (de) |
DE (1) | DE602008004848D1 (de) |
FR (1) | FR2922202B1 (de) |
WO (1) | WO2009087284A1 (de) |
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FR2950877B1 (fr) | 2009-10-07 | 2012-01-13 | Commissariat Energie Atomique | Structure a cavite comportant une interface de collage a base de materiau getter |
FR2950876B1 (fr) | 2009-10-07 | 2012-02-10 | Commissariat Energie Atomique | Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter |
FR2952627A1 (fr) * | 2009-11-17 | 2011-05-20 | Commissariat Energie Atomique | Getter ayant deux temperatures d'activation et structure comportant ce getter |
EP2363373A1 (de) * | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Procédé de collage pour systèmes micro et nano sensibles |
FR2967150A1 (fr) | 2010-11-09 | 2012-05-11 | Commissariat Energie Atomique | Procédé de réalisation de substrat a couches enfouies de matériau getter |
FR2967302B1 (fr) * | 2010-11-09 | 2012-12-21 | Commissariat Energie Atomique | Structure d'encapsulation d'un micro-dispositif comportant un matériau getter |
FR2976932A1 (fr) * | 2011-06-23 | 2012-12-28 | Commissariat Energie Atomique | Structure a materiau getter protege hermetiquement lors de sa realisation |
FR2977883B1 (fr) | 2011-07-11 | 2014-03-14 | Commissariat Energie Atomique | Structure getter a capacite de pompage optimisee |
FR2981198B1 (fr) * | 2011-10-11 | 2014-04-04 | Commissariat Energie Atomique | Structure d'encapsulation de dispositif electronique et procede de realisation d'une telle structure |
FR2981059A1 (fr) * | 2011-10-11 | 2013-04-12 | Commissariat Energie Atomique | Procede d'encapsulation de micro-dispositif par report de capot et depot de getter a travers le capot |
FR2982073B1 (fr) | 2011-10-28 | 2014-10-10 | Commissariat Energie Atomique | Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique |
WO2013191656A1 (en) * | 2012-06-20 | 2013-12-27 | Agency For Science, Technology And Research | A layer arrangement and a wafer level package comprising the layer arrangement |
JP6230286B2 (ja) * | 2012-08-20 | 2017-11-15 | セイコーインスツル株式会社 | 電子デバイス及び電子デバイスの製造方法 |
JP6230285B2 (ja) * | 2012-08-24 | 2017-11-15 | セイコーインスツル株式会社 | 電子デバイス、memsセンサ及び電子デバイスの製造方法 |
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FR3008965B1 (fr) | 2013-07-26 | 2017-03-03 | Commissariat Energie Atomique | Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter |
US9637378B2 (en) * | 2013-09-11 | 2017-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cup-like getter scheme |
US9242853B2 (en) | 2013-10-15 | 2016-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of improving getter efficiency by increasing superficial area |
FR3014241B1 (fr) | 2013-11-29 | 2017-05-05 | Commissariat Energie Atomique | Structure d'encapsulation comprenant des tranchees partiellement remplies de materiau getter |
FR3014240B1 (fr) | 2013-11-29 | 2017-05-05 | Commissariat Energie Atomique | Procede de realisation d'un substrat comportant un materiau getter dispose sur des parois d'un ou plusieurs trous borgnes formes dans le substrat |
FR3030475B1 (fr) | 2014-12-17 | 2017-01-20 | Commissariat Energie Atomique | Structure getter multi-niveaux et structure d'encapsulation comportant une telle structure getter multi-niveaux |
US9718672B2 (en) | 2015-05-27 | 2017-08-01 | Globalfoundries Singapore Pte. Ltd. | Electronic devices including substantially hermetically sealed cavities and getter films with Kelvin measurement arrangement for evaluating the getter films and methods for fabricating the same |
US9438411B1 (en) | 2015-08-12 | 2016-09-06 | The Boeing Company | Method and apparatus for synchronizing digital messages |
US9570321B1 (en) * | 2015-10-20 | 2017-02-14 | Raytheon Company | Use of an external getter to reduce package pressure |
JP2018054496A (ja) * | 2016-09-29 | 2018-04-05 | セイコーインスツル株式会社 | パッケージおよび赤外線センサ |
FR3072788B1 (fr) | 2017-10-24 | 2020-05-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Source de rayonnement infrarouge modulable |
CN108249386B (zh) * | 2018-01-23 | 2020-09-08 | 苏州大学 | 激活温度可控的非蒸散型薄膜吸气剂及其应用 |
US10526199B1 (en) * | 2018-09-27 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | High efficiency getter design in vacuum MEMS device |
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-
2007
- 2007-10-15 FR FR0707212A patent/FR2922202B1/fr not_active Expired - Fee Related
-
2008
- 2008-10-09 AT AT08869876T patent/ATE497481T1/de not_active IP Right Cessation
- 2008-10-09 EP EP08869876A patent/EP2197780B1/de active Active
- 2008-10-09 US US12/679,487 patent/US8605445B2/en active Active
- 2008-10-09 WO PCT/FR2008/001420 patent/WO2009087284A1/fr active Application Filing
- 2008-10-09 JP JP2010529422A patent/JP5431343B2/ja active Active
- 2008-10-09 DE DE602008004848T patent/DE602008004848D1/de active Active
- 2008-10-09 CA CA2701363A patent/CA2701363A1/fr not_active Abandoned
- 2008-10-09 EP EP10158202.1A patent/EP2204347B1/de active Active
-
2010
- 2010-03-23 US US12/729,634 patent/US8414963B2/en active Active
Also Published As
Publication number | Publication date |
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CA2701363A1 (fr) | 2009-07-16 |
WO2009087284A1 (fr) | 2009-07-16 |
JP2011501426A (ja) | 2011-01-06 |
US8605445B2 (en) | 2013-12-10 |
EP2197780A1 (de) | 2010-06-23 |
FR2922202B1 (fr) | 2009-11-20 |
EP2204347A1 (de) | 2010-07-07 |
EP2197780B1 (de) | 2011-02-02 |
US20100178419A1 (en) | 2010-07-15 |
US8414963B2 (en) | 2013-04-09 |
DE602008004848D1 (de) | 2011-03-17 |
US20100193215A1 (en) | 2010-08-05 |
FR2922202A1 (fr) | 2009-04-17 |
ATE497481T1 (de) | 2011-02-15 |
JP5431343B2 (ja) | 2014-03-05 |
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