EP2193010A1 - Polishing pad - Google Patents
Polishing padInfo
- Publication number
- EP2193010A1 EP2193010A1 EP08795288A EP08795288A EP2193010A1 EP 2193010 A1 EP2193010 A1 EP 2193010A1 EP 08795288 A EP08795288 A EP 08795288A EP 08795288 A EP08795288 A EP 08795288A EP 2193010 A1 EP2193010 A1 EP 2193010A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- polishing
- polishing pad
- grooves
- transparent window
- barrier region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
Definitions
- CMP Chemical-mechanical polishing
- the manufacture of semiconductor devices generally involves the formation of various process layers, selective removal or patterning of portions of those layers, and deposition of yet additional process layers above the surface of a semiconducting substrate to form a semiconductor wafer.
- the process layers can include, by way of example, insulation layers, gate oxide layers, conductive layers, layers of metal or glass, etc. It is generally desirable in certain steps of the wafer process that the uppermost surface of the process layers be planar, i.e., flat, for the deposition of subsequent layers.
- CMP is used to planarize process layers wherein a deposited material, such as a conductive or insulating material, is polished to planarize the wafer for subsequent process steps.
- a wafer is mounted upside down on a carrier in a CMP tool.
- a force pushes the carrier and the wafer downward toward a polishing pad.
- the carrier and the wafer are rotated above the rotating polishing pad on the CMP tool's polishing table.
- a polishing composition (also referred to as a polishing slurry) generally is introduced between the rotating wafer and the rotating polishing pad during the polishing process.
- the polishing composition typically contains a chemical that interacts with or dissolves portions of the uppermost wafer layer(s) and an abrasive material that physically removes portions of the layer(s).
- the wafer and the polishing pad can be rotated in the same direction or in opposite directions, whichever is desirable for the particular polishing process being carried out.
- the carrier also can oscillate across the polishing pad on the polishing table.
- One method of monitoring the polishing process in situ involves the use of a polishing pad having an aperture or window.
- the aperture or window provides a portal through which light can pass to allow the inspection of the wafer surface during the polishing process.
- Polishing pads having apertures and windows are known and have been used to polish substrates, such as the surface of semiconductor devices. For example, U.S.
- Patent 5,605,760 provides a pad having a transparent window formed from a solid, uniform polymer, which has no intrinsic ability to absorb or transport slurry.
- U.S. Patent 5,433,651 discloses a polishing pad wherein a portion of the pad has been removed to provide an aperture through which light can pass.
- U.S. Patents 5,893,796 and 5,964,643 disclose removing a portion of a polishing pad to provide an aperture and placing a transparent polyurethane or quartz plug in the aperture to provide a transparent window, or removing a portion of the backing of a polishing pad to provide a translucency in the pad.
- Patents 6,171,181 and 6,387,312 disclose a polishing pad having a transparent region that is formed by solidifying a flowable material (e.g., polyurethane) at a rapid rate of cooling.
- a flowable material e.g., polyurethane
- a problem often encountered during chemical-mechanical polishing is the tendency for the polishing composition and the resulting polishing debris to accumulate at the polishing pad window. The accumulated polishing composition and polishing debris can obstruct transmission of light through the window thereby reducing the sensitivity of the optical endpoint detection method.
- polishing pads are suitable for their intended purpose, a need remains for other polishing pads that provide effective planarization coupled with effective optical endpoint detection, particularly in the chemical-mechanical polishing of a substrate.
- polishing pads having satisfactory features such as polishing efficiency, slurry flow across and within the polishing pad, resistance to corrosive etchants, and/or polishing uniformity.
- polishing pads that can be produced using relatively low cost methods and which require little or no conditioning prior to use.
- the invention provides a polishing pad comprising (a) a polishing layer having a polishing surface comprising (1) a plurality of grooves disposed into the polishing layer a measurable depth from the polishing surface, and (2) a barrier region free of grooves, and (b) a transparent window disposed in and surrounded by the barrier region.
- the invention further provides a method of polishing a substrate comprising (i) providing a workpiece to be polished, (ii) contacting the workpiece with the polishing pad of the invention, and (iii) abrading at least a portion of the surface of the workpiece with the polishing system to polish the workpiece.
- Figure 1 is a schematic top view illustrating a polishing pad of the invention having a polishing layer (10) comprising a polishing surface (12) with continuous grooves (40) and discontinuous grooves (50) and a substantially transparent window (15) disposed in a barrier region (20) substantially free of grooves.
- Figure 2 is a fragmentary, partially cross-sectional perspective view depicting a polishing pad of the invention having a polishing layer (10) comprising a polishing surface (12) with continuous grooves (40) and discontinuous grooves (50) disposed into the polishing layer (10) a measurable depth from the polishing surface and a substantially transparent window (15) disposed in a barrier region (20) substantially free of grooves.
- Figure 3 is a fragmentary, partially cross-sectional perspective view depicting a polishing pad of the invention having a polishing layer (10) comprising a polishing surface (12) with continuous grooves (40) and discontinuous grooves (50) disposed into the polishing layer a measurable depth from the polishing surface and a substantially transparent window (15) disposed in a barrier region (20) free of grooves, wherein the depth of the discontinuous grooves transition from a maximum value to zero proximate to the barrier region (20).
- Figure 4 is a fragmentary, partially cross-sectional perspective view depicting a polishing pad of the invention having a polishing layer (10) and a sub-layer (30), wherein the sub-layer has an aperture (35) substantially aligned with the transparent window (15).
- the invention is directed to a chemical-mechanical polishing pad comprising a polishing layer and a transparent window.
- the polishing layer has a polishing surface comprising (a) a plurality of grooves disposed into the polishing layer and (b) a barrier region free of grooves.
- the transparent window is disposed in and surrounded by the barrier region. While not wishing to be bound to any particular theory, it is believed that the presence of a barrier region substantially free of grooves surrounding the transparent window will reduce the amount of polishing composition that remains on or within the transparent window.
- the polishing pad can have any suitable dimensions.
- the polishing pad will be circular in shape (as is used in rotary polishing tools) or will be produced as a looped linear belt (as is used in linear polishing tools).
- the polishing pad is circular.
- Figure 1 depicts a circular polishing pad of the invention comprising a polishing layer (10) comprising a polishing surface (12), continuous grooves (40) and discontinuous grooves (50), and a transparent window (15) disposed in a barrier region (20) substantially free of grooves.
- the grooves disposed in the polishing layer facilitate the lateral transport of polishing compositions across the surface of the polishing pad.
- the grooves can be in any suitable pattern.
- grooves can be in the form of slanted grooves, circular grooves, concentric grooves, spiral grooves, radial grooves, or XY Crosshatch pattern.
- the polishing pad can have two or more different groove patterns.
- the polishing pad can have a combination of concentric grooves and radial grooves or a combination of concentric grooves and XY Crosshatch grooves.
- the grooves are concentric.
- the grooves can be continuous in connectivity across the surface of the polishing pad.
- each groove can be discontinuous across the surface of the pad wherein each discontinuous groove has a first end and a second end.
- a portion of the grooves, i.e., one or more grooves are continuous (40), and a portion of the grooves, i.e., one or more grooves, are discontinuous (50).
- each groove has a measurable depth from the polishing surface.
- the depth can be any suitable depth.
- the depth can be 1 mm or less, 0.8 mm or less, 0.6 mm or less, 0.5 mm or less, 0.4 mm or less, 0.3 mm or less, 0.2 mm or less, or 0.1 mm or less.
- each continuous and/or discontinuous groove can be constant or can vary along the length or the circumference of the grooves, hi one embodiment, as shown in Figure 3, the depth of a discontinuous groove (50) transitions from a maximum depth to zero, i.e., the groove tapers to the polishing surface (12) at at least one end of the discontinuous groove.
- the depth transition occurs gradually, i.e., over a length of about 0.5 mm or more, 1 mm or more, about 2 mm or more, about 3 mm or more, about 4 mm or more, or about 5 mm or more.
- the depth transition from a maximum depth to zero occurs proximate to the barrier region.
- the polishing pad further comprises a barrier region which is substantially free of grooves or desirably merely free of grooves.
- the barrier region (20) is disposed between the first and second ends of concentric, discontinuous grooves (50).
- the barrier region can have any suitable dimensions and any suitable shape.
- the perimeter of the barrier region, defined by adjacent continuous and/or discontinuous grooves, can be any suitable shape (e.g., round, oval, square, rectangular, triangular, and so on).
- the barrier region typically has a long diameter axis or length of about 2 cm or more (e.g., about 3 cm or more, about 4 cm or more about 5 cm or more, about 6 cm or more, about 7 cm or more, about 8 cm or more, about 9 cm or more, about 10 cm or more, about 11 cm or more, or about 12 cm or more) and a short diameter axis or width of about 1 cm or more (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, about 5 cm or more, about 6 cm or more, about 7 cm or more, or about 8 cm or more).
- the perimeter of the barrier region typically has a diameter or width of about 2 cm or more (e.g., about 3 cm or more, about 4 cm or more, about 5 cm or more, about 6 cm or more, about 7 cm or more, about 8 cm or more, about 9 cm or more, or about 10 cm or more)] [0019]
- the transparent window (15) is disposed in and surrounded by the barrier region (20).
- the transparent window can be disposed symmetrically or asymmetrically in the barrier region.
- the transparent window will have a perimeter that defines the transparent window in the barrier region.
- Each point on the perimeter of the transparent window will have a shortest distance L to a continuous and/or discontinuous groove, thereby providing a series of shortest distances or spacings from the perimeter of the transparent window to the grooves (i.e., Li, L 2 , L 3 , ).
- the smallest value (L m m) and the largest value (Lm a ⁇ )of the series of shortest distances can be any suitable length.
- L m1n can be about 0.5 cm or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more), hi addition, or alternatively, L 1111n can be 10 cm or less (e.g., about 8 cm or less, about 7 cm or less, about 6 cm or less, about 5 cm or less, or about 4 cm or less).
- L n ⁇ x can be independently about 0.5 cm or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more), hi addition, or alternatively, the L m2x can be independently 10 cm or less (e.g., about 8 cm or less, about 7 cm or less, about 6 cm or less, about 5 cm or less, or about 4 cm or less).
- L m i n and L m3x can be the same or different with respect to, independently, continuous grooves and discontinuous grooves. Moreover, the series of shortest distances Li, L 2 , L 3 , etc. need not be the same such that there is uniform spacing between the transparent window and the grooves.
- the transparent window can have any suitable dimensions (e.g., length, width, diameter, and thickness) and any suitable shape (e.g., round, oval, square, rectangular, triangular, and so on).
- the transparent window typically has a long diameter axis or length of about 1 cm or more (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, about 5 cm, about 6 cm or more, about 7 cm or more, or about 8 cm or more) and a short diameter axis or width of about 0.5 or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more).
- the transparent window When the transparent window is circular or square in shape, the transparent window typically has a diameter or width of about 1 cm or more, (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, or about 5 cm or more).
- the transparent window (15) comprises an optically transmissive material. The presence of the transparent window enables the polishing pad to be used in conjunction with an in situ CMP process monitoring technique.
- the optically transmissive material has a light transmission of at least about 10% or more (e.g., about 20% or more, about 30% or more, or about 40% or more) at one or more wavelengths of from about 190 nm to about 10,000 nm (e.g.; about 190 nm to about 3500 nm, about 200 nm to about 1000 nm, or about 200 nm to about 780 nm).
- the optically transmissive material can be any suitable material, many of which are known in the art.
- the optically transmissive material can be the same or different than the material in the remainder of the polishing pad.
- the optically transmissive material can consist of a glass or polymer-based plug that is inserted in an aperture of the polishing pad or can comprise the same polymeric material used in the remainder of the polishing pad.
- the transparent window can be affixed to the polishing pad by any suitable means.
- the transparent window can be affixed to the polishing pad through the use of an adhesive.
- the transparent window is affixed to the polishing layer without the use of an adhesive, for example by welding.
- the transparent window can have any suitable structure (e.g., crystallinity), density, and porosity.
- the transparent window can be solid or porous (e.g., microporous or nanoporous having an average pore size of less than 1 micron).
- the transparent window is solid or is nearly solid (e.g., has a void volume of about 3% or less).
- the transparent window (15) can be flush with the polishing surface (12) of the polishing layer, i.e., the upper most window surface is substantially co-planar with the polishing surface.
- the transparent window can be recessed from the polishing surface of the polishing layer.
- the polishing layer can be used alone or optionally as one layer of a multi-layer stacked polishing pad.
- the polishing layer (10) comprising a polishing surface (12), a barrier region substantially free of grooves (20), continuous grooves (40) and discontinuous grooves (50), and a transparent window (15) can be used in combination with a sub-layer (30) that is substantially coextensive with the polishing layer.
- the sub-layer (30) comprises an aperture (35) that is substantially aligned with the transparent window (15) of the polishing layer.
- the polishing layer, the barrier region, the transparent window, and the sub-layer of the polishing pad can comprise any suitable material, which can be the same or different.
- the polishing layer, the barrier region, the transparent window, and the sub-layer of the polishing pad each independently comprise a polymer resin.
- the polymer resin can be any suitable polymer resin.
- the polymer resin is selected from the group consisting of thermoplastic elastomers, thermoset polymers, polyurethanes (e.g., thermoplastic polyurethanes), polyolefms (e.g., thermoplastic polyolefins), polycarbonates, polyvinylalcohols, nylons, elastomeric rubbers, elastomeric polyethylenes, polytetrafluoroethylenes, polyethyleneterephthalates, polyimides, polyaramides, polyarylenes, polyacrylates, polystyrenes, polymethylmethacrylates, copolymers thereof, and mixtures thereof.
- the polymer resin is polyurethane, more preferably thermoplastic polyurethane.
- the polishing layer, the barrier region, the transparent window, and the sub-layer can comprise a different polymer resin.
- the polishing layer can comprise porous thermoset polyurethane
- the sub-layer can comprise closed-cell porous polyurethane foam
- the transparent window can comprise solid thermoplastic polyurethane.
- the polishing layer and the sub-layer typically will have different chemical (e.g., polymer composition) and/or physical properties (e.g., porosity, compressibility, transparency, and hardness).
- the polishing layer and the sub-layer independently can be closed cell (e.g., a porous foam), open cell (e.g., a sintered material), or solid (e.g., cut from a solid polymer sheet).
- the polishing layer is less compressible than the sub-layer.
- the polishing layer and the sub-layer can be formed by any suitable method, many of which are known in the art.
- Suitable methods include casting, cutting, reaction injection molding, injection blow molding, compression molding, sintering, thermoforming, and pressing the porous polymer into the desired polishing pad shape.
- Other polishing pad elements also can be added to the porous polymer before, during, or after shaping the porous polymer, as desired.
- backing materials can be applied, holes can be drilled, or surface textures can be provided (e.g., grooves, channels), by various methods generally known in the art.
- the polishing layer optionally further comprise organic or inorganic particles.
- the organic or inorganic particles can be selected from the group consisting of metal oxide particles (e.g., silica particles, alumina particles, ceria particles), diamond particles, glass fibers, carbon fibers, glass beads, aluminosilicates, phyllosilicates (e.g., mica particles), cross-linked polymer particles (e.g., polystyrene particles), water-soluble particles, water- absorbent particles, hollow particles, combinations thereof, and the like.
- the particles can have any suitable size.
- the particles can have an average particle diameter of about 1 run to about 10 microns (e.g., about 20 nm to about 5 microns).
- the amount of the particles in the body of the polishing pad can be any suitable amount, for example, from about 1 wt.% to about 95 wt.% based on the total weight of the polishing pad body.
- CMP chemical-mechanical polishing
- the apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad of the invention in contact with the platen and moving with the platen when in motion, and a carrier that holds a workpiece to be polished by contacting and moving relative to the surface of the polishing pad.
- the polishing of the workpiece takes place by the workpiece being placed in contact with the polishing pad and then the polishing pad moving relative to the workpiece, typically with a polishing composition therebetween, so as to abrade at least a portion of the workpiece to polish the workpiece.
- the polishing composition can be any suitable polishing composition.
- a polishing composition typically comprises a liquid carrier (e.g., an aqueous carrier), a pH adjustor, and an abrasive.
- the polishing composition optionally further comprises oxidizing agents, organic acids, complexing agents, pH buffers, surfactants, corrosion inhibitors, anti-foaming agents, and the like.
- the CMP apparatus can be any suitable CMP apparatus, many of which are known in the art.
- the CMP apparatus further comprises an in situ polishing endpoint detection system, many of which are known in the art.
- Techniques for inspecting and monitoring the polishing process by analyzing light or other radiation reflected from a surface of the workpiece are known in the art. Such methods are described, for example, in U.S. Patent 5,196,353, U.S. Patent 5,433,651, U.S. Patent 5,609,511, U.S. Patent 5,643,046, U.S. Patent 5,658,183, U.S. Patent 5,730,642, U.S. Patent 5,838,447, U.S. Patent 5,872,633, U.S. Patent 5,893,796, U.S.
- the inspection or monitoring of the progress of the polishing process with respect to a workpiece being polished enables the determination of the polishing end-point, i.e., the determination of when to terminate the polishing process with respect to a particular workpiece.
- the polishing pad of the invention is suitable for use in a method of polishing many types of workpieces (e.g., substrates or wafers) and workpiece materials.
- the polishing pad can be used to polish workpieces including memory storage devices, glass substrates, memory or rigid disks, metals (e.g., noble metals), magnetic heads, inter-layer dielectric (ILD) layers, polymeric films, low and high dielectric constant films, ferroelectrics, micro-electro-mechanical systems (MEMS), semiconductor wafers, field emission displays, and other microelectronic substrates, especially microelectronic substrates comprising insulating layers (e.g., metal oxide, silicon nitride, or low dielectric materials) and/or metal- containing layers (e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium, iridium, alloys thereof, and mixtures thereof).
- metals e.g., noble metals
- ILD inter-layer dielectric
- polymeric films low and high dielectric constant films
- ferroelectrics ferroelectrics
- MEMS micro-electro-mechanical systems
- memory or rigid disk refers to any magnetic disk, hard disk, rigid disk, or memory disk for retaining information in electromagnetic form.
- Memory or rigid disks typically have a surface that comprises nickel-phosphorus, but the surface can comprise any other suitable material.
- Suitable metal oxide insulating layers include, for example, alumina, silica, titania, ceria, zirconia, germania, magnesia, and combinations thereof.
- the workpiece can comprise, consist essentially of, or consist of any suitable metal composite.
- Suitable metal composites include, for example, metal nitrides (e.g., tantalum nitride, titanium nitride, and tungsten nitride), metal carbides (e.g., silicon carbide and tungsten carbide), nickel- phosphorus, alumino-borosilicate, borosilicate glass, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), silicon/germanium alloys, and silicon/germanium/ carbon alloys.
- the workpiece also can comprise, consist essentially of, or consist of any suitable semiconductor base material. Suitable semiconductor base materials include single-crystal silicon, poly-crystalline silicon, amorphous silicon, silicon-on-insulator, and gallium arsenide.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US95629307P | 2007-08-16 | 2007-08-16 | |
| PCT/US2008/009687 WO2009025748A1 (en) | 2007-08-16 | 2008-08-13 | Polishing pad |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP2193010A1 true EP2193010A1 (en) | 2010-06-09 |
| EP2193010A4 EP2193010A4 (en) | 2013-10-16 |
| EP2193010B1 EP2193010B1 (en) | 2020-01-08 |
Family
ID=40378437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP08795288.3A Active EP2193010B1 (en) | 2007-08-16 | 2008-08-13 | Polishing pad |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20110183579A1 (en) |
| EP (1) | EP2193010B1 (en) |
| JP (1) | JP5307815B2 (en) |
| KR (1) | KR101203789B1 (en) |
| CN (1) | CN101778701B (en) |
| IL (1) | IL203461A (en) |
| MY (1) | MY154071A (en) |
| SG (1) | SG183738A1 (en) |
| TW (1) | TWI411495B (en) |
| WO (1) | WO2009025748A1 (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8047899B2 (en) * | 2007-07-26 | 2011-11-01 | Macronix International Co., Ltd. | Pad and method for chemical mechanical polishing |
| US8662957B2 (en) * | 2009-06-30 | 2014-03-04 | Applied Materials, Inc. | Leak proof pad for CMP endpoint detection |
| JP5426469B2 (en) * | 2010-05-10 | 2014-02-26 | 東洋ゴム工業株式会社 | Polishing pad and glass substrate manufacturing method |
| US8657653B2 (en) * | 2010-09-30 | 2014-02-25 | Nexplanar Corporation | Homogeneous polishing pad for eddy current end-point detection |
| US8628384B2 (en) * | 2010-09-30 | 2014-01-14 | Nexplanar Corporation | Polishing pad for eddy current end-point detection |
| CN102501187A (en) * | 2011-11-04 | 2012-06-20 | 厦门大学 | Polishing disk capable of adjusting regional pressure |
| US9067299B2 (en) * | 2012-04-25 | 2015-06-30 | Applied Materials, Inc. | Printed chemical mechanical polishing pad |
| JP2014104521A (en) * | 2012-11-26 | 2014-06-09 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| US9649742B2 (en) | 2013-01-22 | 2017-05-16 | Nexplanar Corporation | Polishing pad having polishing surface with continuous protrusions |
| CN104044087B (en) * | 2014-06-18 | 2016-09-07 | 蓝思科技股份有限公司 | A kind of sapphire polishing copper dish and repair dish method |
| CN106607749B (en) * | 2015-10-22 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | A kind of barrier type chemical and mechanical grinding cushion and grinding device |
| JP6940495B2 (en) | 2015-10-30 | 2021-09-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Equipment and methods for forming abrasive articles with the desired zeta potential |
| US9925637B2 (en) * | 2016-08-04 | 2018-03-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapered poromeric polishing pad |
| TWI595968B (en) * | 2016-08-11 | 2017-08-21 | 宋建宏 | Polishing pad and method for manufacturing the same |
| TWI650202B (en) * | 2017-08-22 | 2019-02-11 | 智勝科技股份有限公司 | Polishing pad, manufacturing method of a polishing pad and polishing method |
| US11685013B2 (en) * | 2018-01-24 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad for chemical mechanical planarization |
| US20220023991A1 (en) * | 2018-11-27 | 2022-01-27 | 3M Innovative Properties Company | Polishing pads and systems and methods of making and using the same |
| WO2022202008A1 (en) * | 2021-03-26 | 2022-09-29 | 富士紡ホールディングス株式会社 | Polishing pad |
| JP7659171B2 (en) * | 2021-03-26 | 2025-04-09 | 富士紡ホールディングス株式会社 | Polishing Pad |
| JP7659172B2 (en) * | 2021-03-26 | 2025-04-09 | 富士紡ホールディングス株式会社 | Polishing Pad |
| CN113246015B (en) * | 2021-05-25 | 2022-09-20 | 万华化学集团电子材料有限公司 | Polishing pad with end point detection window and application thereof |
| CN115837633A (en) * | 2022-12-08 | 2023-03-24 | 上海芯谦集成电路有限公司 | Processing method, polishing layer and polishing pad groove of detection window polishing pad |
| CN120588104B (en) * | 2025-08-08 | 2025-10-10 | 万华化学集团电子材料有限公司 | Polishing pad and wafer polishing device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6171181B1 (en) * | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
| US8485862B2 (en) * | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
| JP2002001652A (en) * | 2000-06-22 | 2002-01-08 | Nikon Corp | Polishing pad, polishing apparatus and element manufacturing method |
| KR100858392B1 (en) * | 2001-04-25 | 2008-09-11 | 제이에스알 가부시끼가이샤 | Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer |
| KR20050052513A (en) * | 2002-09-25 | 2005-06-02 | 피피지 인더스트리즈 오하이오 인코포레이티드 | Polishing pad with window for planarization |
| US6884156B2 (en) * | 2003-06-17 | 2005-04-26 | Cabot Microelectronics Corporation | Multi-layer polishing pad material for CMP |
| US7195539B2 (en) * | 2003-09-19 | 2007-03-27 | Cabot Microelectronics Coporation | Polishing pad with recessed window |
| US8066552B2 (en) * | 2003-10-03 | 2011-11-29 | Applied Materials, Inc. | Multi-layer polishing pad for low-pressure polishing |
| JP4877448B2 (en) * | 2003-11-04 | 2012-02-15 | Jsr株式会社 | Chemical mechanical polishing pad |
| US7442116B2 (en) * | 2003-11-04 | 2008-10-28 | Jsr Corporation | Chemical mechanical polishing pad |
| US7204742B2 (en) * | 2004-03-25 | 2007-04-17 | Cabot Microelectronics Corporation | Polishing pad comprising hydrophobic region and endpoint detection port |
| KR20060051345A (en) * | 2004-09-22 | 2006-05-19 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | CMP pad with streamlined sight glass |
| US7182670B2 (en) * | 2004-09-22 | 2007-02-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having a streamlined windowpane |
| JP4620501B2 (en) * | 2005-03-04 | 2011-01-26 | ニッタ・ハース株式会社 | Polishing pad |
| KR20070018711A (en) * | 2005-08-10 | 2007-02-14 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | Polishing pads with windows with reduced surface irregularities |
| JP2007118106A (en) * | 2005-10-26 | 2007-05-17 | Toyo Tire & Rubber Co Ltd | Polishing pad and manufacturing method thereof |
-
2008
- 2008-07-22 TW TW097127831A patent/TWI411495B/en active
- 2008-08-13 WO PCT/US2008/009687 patent/WO2009025748A1/en not_active Ceased
- 2008-08-13 CN CN2008801027610A patent/CN101778701B/en active Active
- 2008-08-13 SG SG2012060802A patent/SG183738A1/en unknown
- 2008-08-13 MY MYPI2010000193A patent/MY154071A/en unknown
- 2008-08-13 US US12/673,057 patent/US20110183579A1/en not_active Abandoned
- 2008-08-13 JP JP2010521026A patent/JP5307815B2/en active Active
- 2008-08-13 EP EP08795288.3A patent/EP2193010B1/en active Active
- 2008-08-13 KR KR1020107005681A patent/KR101203789B1/en active Active
-
2010
- 2010-01-24 IL IL203461A patent/IL203461A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN101778701B (en) | 2012-06-27 |
| KR20100068255A (en) | 2010-06-22 |
| IL203461A (en) | 2014-11-30 |
| CN101778701A (en) | 2010-07-14 |
| MY154071A (en) | 2015-04-30 |
| EP2193010B1 (en) | 2020-01-08 |
| WO2009025748A1 (en) | 2009-02-26 |
| SG183738A1 (en) | 2012-09-27 |
| KR101203789B1 (en) | 2012-11-21 |
| TWI411495B (en) | 2013-10-11 |
| JP5307815B2 (en) | 2013-10-02 |
| US20110183579A1 (en) | 2011-07-28 |
| TW200922748A (en) | 2009-06-01 |
| EP2193010A4 (en) | 2013-10-16 |
| JP2010536583A (en) | 2010-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2193010B1 (en) | Polishing pad | |
| US7195539B2 (en) | Polishing pad with recessed window | |
| US7204742B2 (en) | Polishing pad comprising hydrophobic region and endpoint detection port | |
| US7699684B2 (en) | CMP porous pad with component-filled pores | |
| US6884156B2 (en) | Multi-layer polishing pad material for CMP | |
| US7059936B2 (en) | Low surface energy CMP pad | |
| US20050153634A1 (en) | Negative poisson's ratio material-containing CMP polishing pad | |
| US6960120B2 (en) | CMP pad with composite transparent window | |
| WO2004069470A2 (en) | Cmp pad with composite transparent window |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20100316 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR |
|
| AX | Request for extension of the european patent |
Extension state: AL BA MK RS |
|
| DAX | Request for extension of the european patent (deleted) | ||
| A4 | Supplementary search report drawn up and despatched |
Effective date: 20130917 |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: B24B 37/26 20120101AFI20130911BHEP Ipc: B24B 37/20 20120101ALI20130911BHEP |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
| 17Q | First examination report despatched |
Effective date: 20180220 |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: B24B 37/26 20120101AFI20130911BHEP Ipc: B24B 37/20 20120101ALI20130911BHEP |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: B24B 37/20 20120101ALI20130911BHEP Ipc: B24B 37/26 20120101AFI20130911BHEP |
|
| GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
| INTG | Intention to grant announced |
Effective date: 20190729 |
|
| GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
| GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
| AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR |
|
| REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
| REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
| REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602008061978 Country of ref document: DE |
|
| REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
| REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 1222101 Country of ref document: AT Kind code of ref document: T Effective date: 20200215 |
|
| REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20200108 |
|
| REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200408 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200531 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200508 Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200408 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200409 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 |
|
| REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602008061978 Country of ref document: DE |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 |
|
| PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
| REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 1222101 Country of ref document: AT Kind code of ref document: T Effective date: 20200108 |
|
| 26N | No opposition filed |
Effective date: 20201009 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 |
|
| REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200813 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200831 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200831 |
|
| REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20200831 |
|
| REG | Reference to a national code |
Ref country code: DE Ref legal event code: R081 Ref document number: 602008061978 Country of ref document: DE Owner name: CMC MATERIALS, INC., AURORA, US Free format text: FORMER OWNER: CABOT MICROELECTRONICS CORPORATION, AURORA, ILL., US Ref country code: DE Ref legal event code: R081 Ref document number: 602008061978 Country of ref document: DE Owner name: CMC MATERIALS LLC (N.D.GES.D.STAATES DELAWARE), US Free format text: FORMER OWNER: CABOT MICROELECTRONICS CORPORATION, AURORA, ILL., US |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200831 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20200813 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200108 |
|
| P01 | Opt-out of the competence of the unified patent court (upc) registered |
Effective date: 20230530 |
|
| REG | Reference to a national code |
Ref country code: DE Ref legal event code: R081 Ref document number: 602008061978 Country of ref document: DE Owner name: CMC MATERIALS LLC (N.D.GES.D.STAATES DELAWARE), US Free format text: FORMER OWNER: CMC MATERIALS, INC., AURORA, IL, US |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20250724 Year of fee payment: 18 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20250724 Year of fee payment: 18 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20250723 Year of fee payment: 18 |