EP2193010B1 - Polishing pad - Google Patents
Polishing pad Download PDFInfo
- Publication number
- EP2193010B1 EP2193010B1 EP08795288.3A EP08795288A EP2193010B1 EP 2193010 B1 EP2193010 B1 EP 2193010B1 EP 08795288 A EP08795288 A EP 08795288A EP 2193010 B1 EP2193010 B1 EP 2193010B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- polishing
- polishing pad
- grooves
- transparent window
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 138
- 230000004888 barrier function Effects 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- 238000007517 polishing process Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 8
- 229920002635 polyurethane Polymers 0.000 claims description 7
- 239000004814 polyurethane Substances 0.000 claims description 7
- 239000004433 Thermoplastic polyurethane Substances 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 55
- 239000002245 particle Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 239000002952 polymeric resin Substances 0.000 description 6
- 229920003002 synthetic resin Polymers 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- -1 polyethylenes Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000010102 injection blow moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052615 phyllosilicate Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010107 reaction injection moulding Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920002397 thermoplastic olefin Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
Definitions
- CMP Chemical-mechanical polishing
- the manufacture of semiconductor devices generally involves the formation of various process layers, selective removal or patterning of portions of those layers, and deposition of yet additional process layers above the surface of a semiconducting substrate to form a semiconductor wafer.
- the process layers can include, by way of example, insulation layers, gate oxide layers, conductive layers, layers of metal or glass, etc. It is generally desirable in certain steps of the wafer process that the uppermost surface of the process layers be planar, i.e., flat, for the deposition of subsequent layers.
- CMP is used to planarize process layers wherein a deposited material, such as a conductive or insulating material, is polished to planarize the wafer for subsequent process steps.
- a wafer is mounted upside down on a carrier in a CMP tool.
- a force pushes the carrier and the wafer downward toward a polishing pad.
- the carrier and the wafer are rotated above the rotating polishing pad on the CMP tool's polishing table.
- a polishing composition (also referred to as a polishing slurry) generally is introduced between the rotating wafer and the rotating polishing pad during the polishing process.
- the polishing composition typically contains a chemical that interacts with or dissolves portions of the uppermost wafer layer(s) and an abrasive material that physically removes portions of the layer(s).
- the wafer and the polishing pad can be rotated in the same direction or in opposite directions, whichever is desirable for the particular polishing process being carried out.
- the carrier also can oscillate across the polishing pad on the polishing table.
- polishing pads having apertures and windows are known and have been used to polish substrates, such as the surface of semiconductor devices.
- U.S. Patent 5,605,760 provides a pad having a transparent window formed from a solid, uniform polymer, which has no intrinsic ability to absorb or transport slurry.
- U.S. Patent 5,433,651 discloses a polishing pad wherein a portion of the pad has been removed to provide an aperture through which light can pass.
- Patents 5,893,796 and 5,964,643 disclose removing a portion of a polishing pad to provide an aperture and placing a transparent polyurethane or quartz plug in the aperture to provide a transparent window, or removing a portion of the backing of a polishing pad to provide a translucency in the pad.
- U.S. Patents 6,171,181 and 6,387,312 disclose a polishing pad having a transparent region that is formed by solidifying a flowable material (e.g., polyurethane) at a rapid rate of cooling.
- WO 2004/ 009291 discloses a polishing pad according to the preamble of claim 1.
- JP 2006239833 discloses a polishing pad with a barrier region free of grooves around a detection hole.
- a problem often encountered during chemical-mechanical polishing is the tendency for the polishing composition and the resulting polishing debris to accumulate at the polishing pad window.
- the accumulated polishing composition and polishing debris can obstruct transmission of light through the window thereby reducing the sensitivity of the optical endpoint detection method.
- polishing pads are suitable for their intended purpose, a need remains for other polishing pads that provide effective planarization coupled with effective optical endpoint detection, particularly in the chemical-mechanical polishing of a substrate.
- polishing pads having satisfactory features such as polishing efficiency, slurry flow across and within the polishing pad, resistance to corrosive etchants, and/or polishing uniformity.
- polishing pads that can be produced using relatively low cost methods and which require little or no conditioning prior to use.
- the invention provides a polishing pad according to claim 1.
- the invention is directed to a chemical-mechanical polishing pad comprising a polishing layer and a transparent window.
- the polishing layer has a polishing surface comprising (a) a plurality of grooves disposed into the polishing layer and (b) a barrier region free of grooves.
- the transparent window is disposed in and surrounded by the barrier region. While not wishing to be bound to any particular theory, it is believed that the presence of a barrier region substantially free of grooves surrounding the transparent window will reduce the amount of polishing composition that remains on or within the transparent window.
- the polishing pad can have any suitable dimensions.
- the polishing pad will be circular in shape (as is used in rotary polishing tools) or will be produced as a looped linear belt (as is used in linear polishing tools).
- the polishing pad is circular.
- Figure 1 depicts a circular polishing pad of the invention comprising a polishing layer (10) comprising a polishing surface (12), continuous grooves (40) and discontinuous grooves (50), and a transparent window (15) disposed in a barrier region (20) substantially free of grooves.
- the grooves disposed in the polishing layer facilitate the lateral transport of polishing compositions across the surface of the polishing pad.
- the grooves are concentric.
- a portion of the grooves i.e., one or more grooves, are continuous (40), and a portion of the grooves, i.e., one or more grooves, are discontinuous (50).
- each groove has a measurable depth from the polishing surface.
- the depth can be any suitable depth.
- the depth can be 1 mm or less, 0.8 mm or less, 0.6 mm or less, 0.5 mm or less, 0.4 mm or less, 0.3 mm or less, 0.2 mm or less, or 0.1 mm or less.
- the depth of each continuous and/or discontinuous groove can be constant or can vary along the length or the circumference of the grooves.
- the depth of a discontinuous groove (50) transitions from a maximum depth to zero, i.e., the groove tapers to the polishing surface (12) at at least one end of the discontinuous groove.
- the depth transition occurs gradually, i.e., over a length of about 0.5 mm or more, 1 mm or more, about 2 mm or more, about 3 mm or more, about 4 mm or more, or about 5 mm or more.
- the depth transition from a maximum depth to zero occurs proximate to the barrier region.
- the polishing pad further comprises a barrier region which is free of grooves. As shown in Figure 1 , the barrier region (20) is disposed between the first and second ends of concentric, discontinuous grooves (50).
- the barrier region can have any suitable dimensions and any suitable shape.
- the perimeter of the barrier region, defined by adjacent continuous and discontinuous grooves, can be any suitable shape (e.g., round, oval, square, rectangular, triangular, and so on).
- the barrier region typically has a long diameter axis or length of about 2 cm or more (e.g., about 3 cm or more, about 4 cm or more about 5 cm or more, about 6 cm or more, about 7 cm or more, about 8 cm or more, about 9 cm or more, about 10 cm or more, about 11 cm or more, or about 12 cm or more) and a short diameter axis or width of about 1 cm or more (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, about 5 cm or more, about 6 cm or more, about 7 cm or more, or about 8 cm or more).
- the perimeter of the barrier region typically has a diameter or width of about 2 cm or more (e.g., about 3 cm or more, about 4 cm or more, about 5 cm or more, about 6 cm or more, about 7 cm or more, about 8 cm or more, about 9 cm or more, or about 10 cm or more)]
- the transparent window (15) is disposed in and surrounded by the barrier region (20).
- the transparent window can be disposed symmetrically or asymmetrically in the barrier region.
- the transparent window will have a perimeter that defines the transparent window in the barrier region.
- Each point on the perimeter of the transparent window will have a shortest distance L to a continuous and/or discontinuous groove, thereby providing a series of shortest distances or spacings from the perimeter of the transparent window to the grooves (i.e., L 1 , L 2 , L 3 , ).
- the smallest value (L min ) and the largest value (L max )of the series of shortest distances can be any suitable length.
- L min can be about 0.5 cm or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more).
- L min can be 10 cm or less (e.g., about 8 cm or less, about 7 cm or less, about 6 cm or less, about 5 cm or less, or about 4 cm or less).
- L max can be independently about 0.5 cm or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more).
- the L max can be independently 10 cm or less (e.g., about 8 cm or less, about 7 cm or less, about 6 cm or less, about 5 cm or less, or about 4 cm or less).
- L min and L max can be the same or different with respect to, independently, continuous grooves and discontinuous grooves.
- the series of shortest distances L 1 , L 2 , L 3 , etc. need not be the same such that there is uniform spacing between the transparent window and the grooves.
- the transparent window can have any suitable dimensions (e.g., length, width, diameter, and thickness) and any suitable shape (e.g., round, oval, square, rectangular, triangular, and so on).
- the transparent window When the transparent window is oval or rectangular in shape, the transparent window typically has a long diameter axis or length of about 1 cm or more (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, about 5 cm, about 6 cm or more, about 7 cm or more, or about 8 cm or more) and a short diameter axis or width of about 0.5 or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more).
- the transparent window When the transparent window is circular or square in shape, the transparent window typically has a diameter or width of about 1 cm or more, (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, or about 5 cm or more).
- the transparent window comprises an optically transmissive material.
- the optically transmissive material has a light transmission of at least about 10% or more (e.g., about 20% or more, about 30% or more, or about 40% or more) at one or more wavelengths of from about 190 nm to about 10,000 nm (e.g.; about 190 nm to about 3500 nm, about 200 nm to about 1000 nm, or about 200 nm to about 780 nm).
- the optically transmissive material can be any suitable material, many of which are known in the art.
- the optically transmissive material is according to the invention different than the material in the remainder of the polishing pad.
- the optically transmissive material can consist of a glass or polymer-based plug that is inserted in an aperture of the polishing pad.
- the transparent window can be affixed to the polishing pad by any suitable means.
- the transparent window can be affixed to the polishing pad through the use of an adhesive.
- the transparent window is affixed to the polishing layer without the use of an adhesive, for example by welding.
- the transparent window can have any suitable structure (e.g., crystallinity), density, and porosity.
- the transparent window can be solid or porous (e.g., microporous or nanoporous having an average pore size of less than 1 micron).
- the transparent window is solid or is nearly solid (e.g., has a void volume of about 3% or less).
- the transparent window (15) is flush with the polishing surface (12) of the polishing layer, i.e., the upper most window surface is substantially co-planar with the polishing surface.
- the polishing layer can be used alone or optionally as one layer of a multi-layer stacked polishing pad.
- the polishing layer (10) comprising a polishing surface (12), a barrier region substantially free of grooves (20), continuous grooves (40) and discontinuous grooves (50), and a transparent window (15) can be used in combination with a sub-layer (30) that is substantially coextensive with the polishing layer.
- the sub-layer (30) comprises an aperture (35) that is substantially aligned with the transparent window (15) of the polishing layer.
- the polishing layer, the barrier region, the transparent window, and the sub-layer of the polishing pad each independently comprise a polymer resin.
- the polymer resin can be any suitable polymer resin.
- the polymer resin is selected from the group consisting of thermoplastic elastomers, thermoset polymers, polyurethanes (e.g., thermoplastic polyurethanes), polyolefins (e.g., thermoplastic polyolefins), polycarbonates, polyvinylalcohols, nylons, elastomeric rubbers, elastomeric polyethylenes, polytetrafluoroethylenes, polyethyleneterephthalates, polyimides, polyaramides, polyarylenes, polyacrylates, polystyrenes, polymethylmethacrylates, copolymers thereof, and mixtures thereof.
- the polymer resin is polyurethane, more preferably thermoplastic polyurethane.
- the polishing layer, the barrier region, the transparent window, and the sub-layer can comprise a different polymer resin.
- the polishing layer can comprise porous thermoset polyurethane
- the sub-layer can comprise closed-cell porous polyurethane foam
- the transparent window can comprise solid thermoplastic polyurethane.
- the polishing layer and the sub-layer typically will have different chemical (e.g., polymer composition) and/or physical properties (e.g., porosity, compressibility, transparency, and hardness).
- the polishing layer and the sub-layer independently can be closed cell (e.g., a porous foam), open cell (e.g., a sintered material), or solid (e.g., cut from a solid polymer sheet).
- the polishing layer is less compressible than the sub-layer.
- the polishing layer and the sub-layer can be formed by any suitable method, many of which are known in the art.
- Suitable methods include casting, cutting, reaction injection molding, injection blow molding, compression molding, sintering, thermoforming, and pressing the porous polymer into the desired polishing pad shape.
- Other polishing pad elements also can be added to the porous polymer before, during, or after shaping the porous polymer, as desired.
- backing materials can be applied, holes can be drilled, or surface textures can be provided (e.g., grooves, channels), by various methods generally known in the art.
- the polishing layer optionally further comprise organic or inorganic particles.
- the organic or inorganic particles can be selected from the group consisting of metal oxide particles (e.g., silica particles, alumina particles, ceria particles), diamond particles, glass fibers, carbon fibers, glass beads, aluminosilicates, phyllosilicates (e.g., mica particles), cross-linked polymer particles (e.g., polystyrene particles), water-soluble particles, water-absorbent particles, hollow particles, combinations thereof, and the like.
- the particles can have any suitable size.
- the particles can have an average particle diameter of about 1 nm to about 10 microns (e.g., about 20 nm to about 5 microns).
- the amount of the particles in the body of the polishing pad can be any suitable amount, for example, from about 1 wt.% to about 95 wt.% based on the total weight of the polishing pad body.
- the polishing pad of the invention is particularly suited for use in conjunction with a chemical-mechanical polishing (CMP) apparatus.
- the apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad of the invention in contact with the platen and moving with the platen when in motion, and a carrier that holds a workpiece to be polished by contacting and moving relative to the surface of the polishing pad.
- the polishing of the workpiece takes place by the workpiece being placed in contact with the polishing pad and then the polishing pad moving relative to the workpiece, typically with a polishing composition therebetween, so as to abrade at least a portion of the workpiece to polish the workpiece.
- the polishing composition can be any suitable polishing composition.
- a polishing composition typically comprises a liquid carrier (e.g., an aqueous carrier), a pH adjustor, and an abrasive.
- the polishing composition optionally further comprises oxidizing agents, organic acids, complexing agents, pH buffers, surfactants, corrosion inhibitors, anti-foaming agents, and the like.
- the CMP apparatus can be any suitable CMP apparatus, many of which are known in the art.
- the polishing pad of the invention also can be used with linear polishing tools.
- the CMP apparatus further comprises an in situ polishing endpoint detection system, many of which are known in the art.
- Techniques for inspecting and monitoring the polishing process by analyzing light or other radiation reflected from a surface of the workpiece are known in the art. Such methods are described, for example, in U.S. Patent 5,196,353 , U.S. Patent 5,433,651 , U.S. Patent 5,609,511 , U.S. Patent 5,643,046 , U.S. Patent 5,658,183 , U.S. Patent 5,730,642 , U.S. Patent 5,838,447 , U.S. Patent 5,872,633 , U.S. Patent 5,893,796 , U.S.
- Patent 5,949,927 and U.S. Patent 5,964,643 .
- the inspection or monitoring of the progress of the polishing process with respect to a workpiece being polished enables the determination of the polishing end-point, i.e., the determination of when to terminate the polishing process with respect to a particular workpiece.
- the polishing pad of the invention is suitable for use in a method of polishing many types of workpieces (e.g., substrates or wafers) and workpiece materials.
- the polishing pad can be used to polish workpieces including memory storage devices, glass substrates, memory or rigid disks, metals (e.g., noble metals), magnetic heads, inter-layer dielectric (ILD) layers, polymeric films, low and high dielectric constant films, ferroelectrics, micro-electro-mechanical systems (MEMS), semiconductor wafers, field emission displays, and other microelectronic substrates, especially microelectronic substrates comprising insulating layers (e.g., metal oxide, silicon nitride, or low dielectric materials) and/or metal-containing layers (e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium, iridium, alloys thereof, and mixtures thereof).
- insulating layers e.g., metal oxide, silicon
- memory or rigid disk refers to any magnetic disk, hard disk, rigid disk, or memory disk for retaining information in electromagnetic form.
- Memory or rigid disks typically have a surface that comprises nickel-phosphorus, but the surface can comprise any other suitable material.
- Suitable metal oxide insulating layers include, for example, alumina, silica, titania, ceria, zirconia, germania, magnesia, and combinations thereof.
- the workpiece can comprise, consist essentially of, or consist of any suitable metal composite.
- Suitable metal composites include, for example, metal nitrides (e.g., tantalum nitride, titanium nitride, and tungsten nitride), metal carbides (e.g., silicon carbide and tungsten carbide), nickel-phosphorus, alumino-borosilicate, borosilicate glass, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), silicon/germanium alloys, and silicon/germanium/ carbon alloys.
- the workpiece also can comprise, consist essentially of, or consist of any suitable semiconductor base material. Suitable semiconductor base materials include single-crystal silicon, poly-crystalline silicon, amorphous silicon, silicon-on-insulator, and gallium arsenide.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
- Chemical-mechanical polishing ("CMP") processes are used in the manufacturing of microelectronic devices to form flat surfaces on semiconductor wafers, field emission displays, and many other microelectronic substrates. For example, the manufacture of semiconductor devices generally involves the formation of various process layers, selective removal or patterning of portions of those layers, and deposition of yet additional process layers above the surface of a semiconducting substrate to form a semiconductor wafer. The process layers can include, by way of example, insulation layers, gate oxide layers, conductive layers, layers of metal or glass, etc. It is generally desirable in certain steps of the wafer process that the uppermost surface of the process layers be planar, i.e., flat, for the deposition of subsequent layers. CMP is used to planarize process layers wherein a deposited material, such as a conductive or insulating material, is polished to planarize the wafer for subsequent process steps.
- In a typical CMP process, a wafer is mounted upside down on a carrier in a CMP tool. A force pushes the carrier and the wafer downward toward a polishing pad. The carrier and the wafer are rotated above the rotating polishing pad on the CMP tool's polishing table. A polishing composition (also referred to as a polishing slurry) generally is introduced between the rotating wafer and the rotating polishing pad during the polishing process. The polishing composition typically contains a chemical that interacts with or dissolves portions of the uppermost wafer layer(s) and an abrasive material that physically removes portions of the layer(s). The wafer and the polishing pad can be rotated in the same direction or in opposite directions, whichever is desirable for the particular polishing process being carried out. The carrier also can oscillate across the polishing pad on the polishing table.
- In polishing the surface of a wafer, it is often advantageous to monitor the polishing process in situ. One method of monitoring the polishing process in situ involves the use of a polishing pad having an aperture or window. The aperture or window provides a portal through which light can pass to allow the inspection of the wafer surface during the polishing process. Polishing pads having apertures and windows are known and have been used to polish substrates, such as the surface of semiconductor devices. For example,
U.S. Patent 5,605,760 provides a pad having a transparent window formed from a solid, uniform polymer, which has no intrinsic ability to absorb or transport slurry.U.S. Patent 5,433,651 discloses a polishing pad wherein a portion of the pad has been removed to provide an aperture through which light can pass.U.S. Patents 5,893,796 and5,964,643 disclose removing a portion of a polishing pad to provide an aperture and placing a transparent polyurethane or quartz plug in the aperture to provide a transparent window, or removing a portion of the backing of a polishing pad to provide a translucency in the pad.U.S. Patents 6,171,181 and6,387,312 disclose a polishing pad having a transparent region that is formed by solidifying a flowable material (e.g., polyurethane) at a rapid rate of cooling.WO 2004/ 009291 discloses a polishing pad according to the preamble of claim 1.JP 2006239833 - A problem often encountered during chemical-mechanical polishing is the tendency for the polishing composition and the resulting polishing debris to accumulate at the polishing pad window. The accumulated polishing composition and polishing debris can obstruct transmission of light through the window thereby reducing the sensitivity of the optical endpoint detection method.
- Although several of the above-described polishing pads are suitable for their intended purpose, a need remains for other polishing pads that provide effective planarization coupled with effective optical endpoint detection, particularly in the chemical-mechanical polishing of a substrate. In addition, there is a need for polishing pads having satisfactory features such as polishing efficiency, slurry flow across and within the polishing pad, resistance to corrosive etchants, and/or polishing uniformity. Finally, there is a need for polishing pads that can be produced using relatively low cost methods and which require little or no conditioning prior to use.
- The invention provides a polishing pad according to claim 1.
-
-
Figure 1 is a schematic top view illustrating a polishing pad of the invention having a polishing layer (10) comprising a polishing surface (12) with continuous grooves (40) and discontinuous grooves (50) and a substantially transparent window (15) disposed in a barrier region (20) substantially free of grooves. -
Figure 2 is a fragmentary, partially cross-sectional perspective view depicting a polishing pad of the invention having a polishing layer (10) comprising a polishing surface (12) with continuous grooves (40) and discontinuous grooves (50) disposed into the polishing layer (10) a measurable depth from the polishing surface and a substantially transparent window (15) disposed in a barrier region (20) substantially free of grooves. -
Figure 3 is a fragmentary, partially cross-sectional perspective view depicting a polishing pad of the invention having a polishing layer (10) comprising a polishing surface (12) with continuous grooves (40) and discontinuous grooves (50) disposed into the polishing layer a measurable depth from the polishing surface and a substantially transparent window (15) disposed in a barrier region (20) free of grooves, wherein the depth of the discontinuous grooves transition from a maximum value to zero proximate to the barrier region (20). -
Figure 4 is a fragmentary, partially cross-sectional perspective view depicting a polishing pad of the invention having a polishing layer (10) and a sub-layer (30), wherein the sub-layer has an aperture (35) substantially aligned with the transparent window (15). - The invention is directed to a chemical-mechanical polishing pad comprising a polishing layer and a transparent window. The polishing layer has a polishing surface comprising (a) a plurality of grooves disposed into the polishing layer and (b) a barrier region free of grooves. The transparent window is disposed in and surrounded by the barrier region. While not wishing to be bound to any particular theory, it is believed that the presence of a barrier region substantially free of grooves surrounding the transparent window will reduce the amount of polishing composition that remains on or within the transparent window.
- The polishing pad can have any suitable dimensions. Typically, the polishing pad will be circular in shape (as is used in rotary polishing tools) or will be produced as a looped linear belt (as is used in linear polishing tools). Preferably, the polishing pad is circular.
-
Figure 1 depicts a circular polishing pad of the invention comprising a polishing layer (10) comprising a polishing surface (12), continuous grooves (40) and discontinuous grooves (50), and a transparent window (15) disposed in a barrier region (20) substantially free of grooves. - The grooves disposed in the polishing layer facilitate the lateral transport of polishing compositions across the surface of the polishing pad. The grooves are concentric.
- As depicted in
Figure 1 , a portion of the grooves, i.e., one or more grooves, are continuous (40), and a portion of the grooves, i.e., one or more grooves, are discontinuous (50). - As depicted in
Figure 2 , each groove has a measurable depth from the polishing surface. The depth can be any suitable depth. For example, the depth can be 1 mm or less, 0.8 mm or less, 0.6 mm or less, 0.5 mm or less, 0.4 mm or less, 0.3 mm or less, 0.2 mm or less, or 0.1 mm or less. The depth of each continuous and/or discontinuous groove can be constant or can vary along the length or the circumference of the grooves. In one embodiment, as shown inFigure 3 , the depth of a discontinuous groove (50) transitions from a maximum depth to zero, i.e., the groove tapers to the polishing surface (12) at at least one end of the discontinuous groove. Preferably, the depth transition occurs gradually, i.e., over a length of about 0.5 mm or more, 1 mm or more, about 2 mm or more, about 3 mm or more, about 4 mm or more, or about 5 mm or more. In one embodiment, the depth transition from a maximum depth to zero occurs proximate to the barrier region. - The polishing pad further comprises a barrier region which is free of grooves. As shown in
Figure 1 , the barrier region (20) is disposed between the first and second ends of concentric, discontinuous grooves (50). - The barrier region can have any suitable dimensions and any suitable shape. The perimeter of the barrier region, defined by adjacent continuous and discontinuous grooves, can be any suitable shape (e.g., round, oval, square, rectangular, triangular, and so on). When the barrier region is oval or rectangular in shape, the barrier region typically has a long diameter axis or length of about 2 cm or more (e.g., about 3 cm or more, about 4 cm or more about 5 cm or more, about 6 cm or more, about 7 cm or more, about 8 cm or more, about 9 cm or more, about 10 cm or more, about 11 cm or more, or about 12 cm or more) and a short diameter axis or width of about 1 cm or more (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, about 5 cm or more, about 6 cm or more, about 7 cm or more, or about 8 cm or more). When the barrier region is circular or square in shape, the perimeter of the barrier region typically has a diameter or width of about 2 cm or more (e.g., about 3 cm or more, about 4 cm or more, about 5 cm or more, about 6 cm or more, about 7 cm or more, about 8 cm or more, about 9 cm or more, or about 10 cm or more)]
- As depicted in
Figure 1 , the transparent window (15) is disposed in and surrounded by the barrier region (20). The transparent window can be disposed symmetrically or asymmetrically in the barrier region. - The transparent window will have a perimeter that defines the transparent window in the barrier region. Each point on the perimeter of the transparent window will have a shortest distance L to a continuous and/or discontinuous groove, thereby providing a series of shortest distances or spacings from the perimeter of the transparent window to the grooves (i.e., L1, L2, L3, ...). The smallest value (Lmin) and the largest value (Lmax)of the series of shortest distances can be any suitable length. For example, Lmin can be about 0.5 cm or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more). In addition, or alternatively, Lmin can be 10 cm or less (e.g., about 8 cm or less, about 7 cm or less, about 6 cm or less, about 5 cm or less, or about 4 cm or less). Lmax can be independently about 0.5 cm or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more). In addition, or alternatively, the Lmax can be independently 10 cm or less (e.g., about 8 cm or less, about 7 cm or less, about 6 cm or less, about 5 cm or less, or about 4 cm or less). Lmin and Lmax can be the same or different with respect to, independently, continuous grooves and discontinuous grooves. Moreover, the series of shortest distances L1, L2, L3, etc. need not be the same such that there is uniform spacing between the transparent window and the grooves.
- The transparent window can have any suitable dimensions (e.g., length, width, diameter, and thickness) and any suitable shape (e.g., round, oval, square, rectangular, triangular, and so on). When the transparent window is oval or rectangular in shape, the transparent window typically has a long diameter axis or length of about 1 cm or more (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, about 5 cm, about 6 cm or more, about 7 cm or more, or about 8 cm or more) and a short diameter axis or width of about 0.5 or more (e.g., about 1 cm or more, about 1.5 cm or more, about 2 cm or more, about 3 cm or more, or about 4 cm or more). When the transparent window is circular or square in shape, the transparent window typically has a diameter or width of about 1 cm or more, (e.g., about 2 cm or more, about 3 cm or more, about 4 cm or more, or about 5 cm or more).
- The transparent window (15) comprises an optically transmissive material. The presence of the transparent window enables the polishing pad to be used in conjunction with an in situ CMP process monitoring technique. Typically, the optically transmissive material has a light transmission of at least about 10% or more (e.g., about 20% or more, about 30% or more, or about 40% or more) at one or more wavelengths of from about 190 nm to about 10,000 nm (e.g.; about 190 nm to about 3500 nm, about 200 nm to about 1000 nm, or about 200 nm to about 780 nm). The optically transmissive material can be any suitable material, many of which are known in the art. The optically transmissive material is according to the invention different than the material in the remainder of the polishing pad. For example, the optically transmissive material can consist of a glass or polymer-based plug that is inserted in an aperture of the polishing pad.
- The transparent window can be affixed to the polishing pad by any suitable means. For example, the transparent window can be affixed to the polishing pad through the use of an adhesive. Desirably, the transparent window is affixed to the polishing layer without the use of an adhesive, for example by welding. Similarly, the transparent window can have any suitable structure (e.g., crystallinity), density, and porosity. For example, the transparent window can be solid or porous (e.g., microporous or nanoporous having an average pore size of less than 1 micron). Preferably, the transparent window is solid or is nearly solid (e.g., has a void volume of about 3% or less).
- As depicted in
Figure 2 , the transparent window (15) is flush with the polishing surface (12) of the polishing layer, i.e., the upper most window surface is substantially co-planar with the polishing surface. - The polishing layer can be used alone or optionally as one layer of a multi-layer stacked polishing pad. For example, as shown in
Figure 4 , the polishing layer (10) comprising a polishing surface (12), a barrier region substantially free of grooves (20), continuous grooves (40) and discontinuous grooves (50), and a transparent window (15) can be used in combination with a sub-layer (30) that is substantially coextensive with the polishing layer. In some embodiments, the sub-layer (30) comprises an aperture (35) that is substantially aligned with the transparent window (15) of the polishing layer. - Desirably, the polishing layer, the barrier region, the transparent window, and the sub-layer of the polishing pad each independently comprise a polymer resin. The polymer resin can be any suitable polymer resin. Typically, the polymer resin is selected from the group consisting of thermoplastic elastomers, thermoset polymers, polyurethanes (e.g., thermoplastic polyurethanes), polyolefins (e.g., thermoplastic polyolefins), polycarbonates, polyvinylalcohols, nylons, elastomeric rubbers, elastomeric polyethylenes, polytetrafluoroethylenes, polyethyleneterephthalates, polyimides, polyaramides, polyarylenes, polyacrylates, polystyrenes, polymethylmethacrylates, copolymers thereof, and mixtures thereof. Preferably, the polymer resin is polyurethane, more preferably thermoplastic polyurethane. The polishing layer, the barrier region, the transparent window, and the sub-layer can comprise a different polymer resin. For example, the polishing layer can comprise porous thermoset polyurethane, the sub-layer can comprise closed-cell porous polyurethane foam, and the transparent window can comprise solid thermoplastic polyurethane.
- The polishing layer and the sub-layer typically will have different chemical (e.g., polymer composition) and/or physical properties (e.g., porosity, compressibility, transparency, and hardness). For example, the polishing layer and the sub-layer independently can be closed cell (e.g., a porous foam), open cell (e.g., a sintered material), or solid (e.g., cut from a solid polymer sheet). Preferably the polishing layer is less compressible than the sub-layer. The polishing layer and the sub-layer can be formed by any suitable method, many of which are known in the art. Suitable methods include casting, cutting, reaction injection molding, injection blow molding, compression molding, sintering, thermoforming, and pressing the porous polymer into the desired polishing pad shape. Other polishing pad elements also can be added to the porous polymer before, during, or after shaping the porous polymer, as desired. For example, backing materials can be applied, holes can be drilled, or surface textures can be provided (e.g., grooves, channels), by various methods generally known in the art.
- The polishing layer optionally further comprise organic or inorganic particles. For example, the organic or inorganic particles can be selected from the group consisting of metal oxide particles (e.g., silica particles, alumina particles, ceria particles), diamond particles, glass fibers, carbon fibers, glass beads, aluminosilicates, phyllosilicates (e.g., mica particles), cross-linked polymer particles (e.g., polystyrene particles), water-soluble particles, water-absorbent particles, hollow particles, combinations thereof, and the like. The particles can have any suitable size. For example, the particles can have an average particle diameter of about 1 nm to about 10 microns (e.g., about 20 nm to about 5 microns). The amount of the particles in the body of the polishing pad can be any suitable amount, for example, from about 1 wt.% to about 95 wt.% based on the total weight of the polishing pad body.
- The polishing pad of the invention is particularly suited for use in conjunction with a chemical-mechanical polishing (CMP) apparatus. Typically, the apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad of the invention in contact with the platen and moving with the platen when in motion, and a carrier that holds a workpiece to be polished by contacting and moving relative to the surface of the polishing pad. The polishing of the workpiece takes place by the workpiece being placed in contact with the polishing pad and then the polishing pad moving relative to the workpiece, typically with a polishing composition therebetween, so as to abrade at least a portion of the workpiece to polish the workpiece. The polishing composition can be any suitable polishing composition. A polishing composition typically comprises a liquid carrier (e.g., an aqueous carrier), a pH adjustor, and an abrasive. Depending on the type of workpiece being polished, the polishing composition optionally further comprises oxidizing agents, organic acids, complexing agents, pH buffers, surfactants, corrosion inhibitors, anti-foaming agents, and the like. The CMP apparatus can be any suitable CMP apparatus, many of which are known in the art. The polishing pad of the invention also can be used with linear polishing tools.
- Desirably, the CMP apparatus further comprises an in situ polishing endpoint detection system, many of which are known in the art. Techniques for inspecting and monitoring the polishing process by analyzing light or other radiation reflected from a surface of the workpiece are known in the art. Such methods are described, for example, in
U.S. Patent 5,196,353 ,U.S. Patent 5,433,651 ,U.S. Patent 5,609,511 ,U.S. Patent 5,643,046 ,U.S. Patent 5,658,183 ,U.S. Patent 5,730,642 ,U.S. Patent 5,838,447 ,U.S. Patent 5,872,633 ,U.S. Patent 5,893,796 ,U.S. Patent 5,949,927 , andU.S. Patent 5,964,643 . Desirably, the inspection or monitoring of the progress of the polishing process with respect to a workpiece being polished enables the determination of the polishing end-point, i.e., the determination of when to terminate the polishing process with respect to a particular workpiece. - The polishing pad of the invention is suitable for use in a method of polishing many types of workpieces (e.g., substrates or wafers) and workpiece materials. For example, the polishing pad can be used to polish workpieces including memory storage devices, glass substrates, memory or rigid disks, metals (e.g., noble metals), magnetic heads, inter-layer dielectric (ILD) layers, polymeric films, low and high dielectric constant films, ferroelectrics, micro-electro-mechanical systems (MEMS), semiconductor wafers, field emission displays, and other microelectronic substrates, especially microelectronic substrates comprising insulating layers (e.g., metal oxide, silicon nitride, or low dielectric materials) and/or metal-containing layers (e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium, iridium, alloys thereof, and mixtures thereof). The term "memory or rigid disk" refers to any magnetic disk, hard disk, rigid disk, or memory disk for retaining information in electromagnetic form. Memory or rigid disks typically have a surface that comprises nickel-phosphorus, but the surface can comprise any other suitable material. Suitable metal oxide insulating layers include, for example, alumina, silica, titania, ceria, zirconia, germania, magnesia, and combinations thereof. In addition, the workpiece can comprise, consist essentially of, or consist of any suitable metal composite. Suitable metal composites include, for example, metal nitrides (e.g., tantalum nitride, titanium nitride, and tungsten nitride), metal carbides (e.g., silicon carbide and tungsten carbide), nickel-phosphorus, alumino-borosilicate, borosilicate glass, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), silicon/germanium alloys, and silicon/germanium/ carbon alloys. The workpiece also can comprise, consist essentially of, or consist of any suitable semiconductor base material. Suitable semiconductor base materials include single-crystal silicon, poly-crystalline silicon, amorphous silicon, silicon-on-insulator, and gallium arsenide.
- The use of the terms "a" and "an" and "the" and similar referents in the context of describing the invention (especially in the context of the following claims) are to be construed to cover both the singular and the plural, unless otherwise indicated herein or clearly contradicted by context. The terms "comprising," "having," "including," and "containing" are to be construed as open-ended terms (i.e., meaning "including, but not limited to,") unless otherwise noted. Recitation of ranges of values herein are merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each separate value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., "such as") provided herein, is intended merely to better illuminate the invention and does not pose a limitation on the scope of the invention unless otherwise claimed. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the invention.
- Preferred embodiments of this invention are described herein, including the best mode known to the inventors for carrying out the invention. Variations of those preferred embodiments may become apparent to those of ordinary skill in the art upon reading the foregoing description. The inventors expect skilled artisans to employ such variations as appropriate, and the inventors intend for the invention to be practiced otherwise than as specifically described herein.
Claims (11)
- A polishing pad comprising:(a) a polishing layer (10) having a polishing surface (12), wherein the polishing surface comprises:(1) a plurality of concentric grooves (40, 50) disposed into the polishing layer (10) a measurable depth from the polishing surface (12), and(2) a barrier region (20) free of grooves;(b) a transparent window (15),
wherein the transparent window (15) comprises optically transmissive material that is different from the material in the remainder of the polishing pad, and wherein;
one or more of the concentric grooves (50) are discontinuous and have a first end and a second end; and wherein the transparent window (15) has an upper most window surface substantially co-planar with the polishing surface (12),
the pad being characterised in that the transparent window (15) is disposed in and surrounded by the barrier region (20); and wherein
the barrier region (20) is disposed between the first and second ends of the concentric grooves (50). - The polishing pad of claim 1, wherein the depth of the discontinuous grooves (50) transitions from a maximum value to zero proximate to the barrier region.
- The polishing pad of claim 2, wherein the depth transition is gradual.
- The polishing pad of claim 1, wherein any one or more of the following applies(a) the polishing layer comprises polyurethane.(b) the transparent window comprises thermoplastic polyurethane.(c) the polishing pad further comprises a sub-layer.
- A method of polishing a substrate comprising(i) providing a workpiece to be polished,(ii) contacting the workpiece with the polishing pad of claim 1, and(iii) abrading at least a portion of the surface of the workpiece with the polishing pad to polish the workpiece.
- The method of claim 5, wherein the method further comprises detecting in situ a polishing endpoint.
- The method of claim 5, wherein the workpiece is contacted with a chemical-mechanical polishing composition located between the workpiece and the polishing pad.
- The method of claim 5, wherein the depth of the discontinues grooves (50) transitions from a maximum value to zero proximate to the barrier region.
- The method of claim 8, wherein the depth transition is gradual.
- The method of claim 9, wherein the polishing pad is circular and the grooves are concentric.
- The method of claim 5, wherein anyone or more of the following applies,(a) the polishing layer comprises polyurethane.(b) the transparent window comprises thermoplastic polyurethane.(c) the polishing pad further comprises a sub-layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95629307P | 2007-08-16 | 2007-08-16 | |
PCT/US2008/009687 WO2009025748A1 (en) | 2007-08-16 | 2008-08-13 | Polishing pad |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2193010A1 EP2193010A1 (en) | 2010-06-09 |
EP2193010A4 EP2193010A4 (en) | 2013-10-16 |
EP2193010B1 true EP2193010B1 (en) | 2020-01-08 |
Family
ID=40378437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08795288.3A Active EP2193010B1 (en) | 2007-08-16 | 2008-08-13 | Polishing pad |
Country Status (10)
Country | Link |
---|---|
US (1) | US20110183579A1 (en) |
EP (1) | EP2193010B1 (en) |
JP (1) | JP5307815B2 (en) |
KR (1) | KR101203789B1 (en) |
CN (1) | CN101778701B (en) |
IL (1) | IL203461A (en) |
MY (1) | MY154071A (en) |
SG (1) | SG183738A1 (en) |
TW (1) | TWI411495B (en) |
WO (1) | WO2009025748A1 (en) |
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WO2020109947A1 (en) * | 2018-11-27 | 2020-06-04 | 3M Innovative Properties Company | Polishing pads and systems and methods of making and using the same |
KR20230161943A (en) * | 2021-03-26 | 2023-11-28 | 후지보 홀딩스 가부시키가이샤 | polishing pad |
CN113246015B (en) * | 2021-05-25 | 2022-09-20 | 万华化学集团电子材料有限公司 | Polishing pad with end point detection window and application thereof |
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JP2005538571A (en) * | 2002-09-25 | 2005-12-15 | ピーピージー インダストリーズ オハイオ, インコーポレイテッド | Polishing pad with window for planarization |
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US7204742B2 (en) * | 2004-03-25 | 2007-04-17 | Cabot Microelectronics Corporation | Polishing pad comprising hydrophobic region and endpoint detection port |
KR20060051345A (en) * | 2004-09-22 | 2006-05-19 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | Cmp pad having a streamlined windowpane |
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KR20070018711A (en) * | 2005-08-10 | 2007-02-14 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | Polishing pad having a window with reduced surface roughness |
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2008
- 2008-07-22 TW TW097127831A patent/TWI411495B/en active
- 2008-08-13 KR KR1020107005681A patent/KR101203789B1/en active IP Right Grant
- 2008-08-13 SG SG2012060802A patent/SG183738A1/en unknown
- 2008-08-13 MY MYPI2010000193A patent/MY154071A/en unknown
- 2008-08-13 US US12/673,057 patent/US20110183579A1/en not_active Abandoned
- 2008-08-13 CN CN2008801027610A patent/CN101778701B/en active Active
- 2008-08-13 EP EP08795288.3A patent/EP2193010B1/en active Active
- 2008-08-13 JP JP2010521026A patent/JP5307815B2/en active Active
- 2008-08-13 WO PCT/US2008/009687 patent/WO2009025748A1/en active Application Filing
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JP2006239833A (en) * | 2005-03-04 | 2006-09-14 | Nitta Haas Inc | Polishing pad |
Also Published As
Publication number | Publication date |
---|---|
TW200922748A (en) | 2009-06-01 |
IL203461A (en) | 2014-11-30 |
US20110183579A1 (en) | 2011-07-28 |
KR101203789B1 (en) | 2012-11-21 |
EP2193010A4 (en) | 2013-10-16 |
WO2009025748A1 (en) | 2009-02-26 |
EP2193010A1 (en) | 2010-06-09 |
TWI411495B (en) | 2013-10-11 |
CN101778701A (en) | 2010-07-14 |
CN101778701B (en) | 2012-06-27 |
MY154071A (en) | 2015-04-30 |
KR20100068255A (en) | 2010-06-22 |
SG183738A1 (en) | 2012-09-27 |
JP5307815B2 (en) | 2013-10-02 |
JP2010536583A (en) | 2010-12-02 |
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