EP2153471A2 - Transparent substrate with advanced electrode layer - Google Patents
Transparent substrate with advanced electrode layerInfo
- Publication number
- EP2153471A2 EP2153471A2 EP08805722A EP08805722A EP2153471A2 EP 2153471 A2 EP2153471 A2 EP 2153471A2 EP 08805722 A EP08805722 A EP 08805722A EP 08805722 A EP08805722 A EP 08805722A EP 2153471 A2 EP2153471 A2 EP 2153471A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- substrate
- substrate according
- interface layer
- periodic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 239000010410 layer Substances 0.000 claims abstract description 136
- 239000002346 layers by function Substances 0.000 claims abstract description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 4
- 230000000737 periodic effect Effects 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000001228 spectrum Methods 0.000 claims description 10
- 238000004049 embossing Methods 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 4
- 230000002301 combined effect Effects 0.000 claims description 2
- 239000011149 active material Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 239000002243 precursor Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- -1 polysiloxanes Polymers 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003373 anti-fouling effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920001485 poly(butyl acrylate) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920002338 polyhydroxyethylmethacrylate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
- Y10T428/24529—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface and conforming component on an opposite nonplanar surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
- Y10T428/24537—Parallel ribs and/or grooves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
- Y10T428/24545—Containing metal or metal compound
Definitions
- the invention relates to an improvement made to a transparent substrate, in particular glass, which is provided with an electrode.
- This conductive substrate is more particularly intended to be part of solar cells. This includes using it as the "front face" of the solar cell, that is to say the one that will be directly exposed to solar radiation to convert into electricity.
- the invention is particularly interested in solar cells of amorphous or microcrystalline Si type.
- This type of product is generally marketed in the form of solar cells mounted in series between two rigid substrates, possibly transparent, whose front face is made of glass. This type of cell is described in the German application DE 10 2004 046 554.1
- the invention therefore also relates to said modules.
- solar modules are not sold per square meter, but the electric power delivered, each additional percentage of efficiency increases the electrical performance, and therefore the price, of a solar module of given dimensions, each percent of efficiency gained, for a given solar module technology, being mainly a function of a gain obtained in the transmission of light within the substrate associated with said cell.
- French patent FR2832706 discloses a glass-function substrate provided with an electrode comprising at least one conductive transparent layer based on metal oxide (s). electrode having the particularity of having an RMS roughness varying from a few nanometers to a few tens of nanometers
- this textured electrode substrate when positioned in the immediate vicinity of an element capable of collecting light (for example a photovoltaic cell, a solar collector) fulfills its function and guarantees the achievement of energy conversion efficiency.
- an element capable of collecting light for example a photovoltaic cell, a solar collector
- the inventors have found that the diffusion of the light source within the substrate to a functional layer of the element capable of collecting light can be further improved.
- the object of the invention is therefore to find means for improving the photoelectric conversion efficiency of these modules, means having more specifically the "front” glasses provided with electrodes mentioned above. We will look for simple ways to implement on an industrial scale, not disrupting the structures and configurations known for this type of product.
- the invention first of all relates to a glass-function substrate associated with a textured electrode having at least one conductive transparent layer based on metal oxide (s), said layer being covered by at least one layer functional element of an element capable of collecting light which is characterized in that the substrate is covered by an interface layer having a textured portion comprising a periodic or non-periodic repeating patterns in relief.
- the electrode is known by the abbreviation T. C. O for "Transparent Conductive Oxide". It is widely used in the field of solar cells and electronics.
- the functional layer is defined as any thin layer based on a material that allows the energetic conversion of light into electrical energy or thermal energy within an element capable of collecting light (for example solar cell or photovoltaic, a solar collector).
- a material that allows the energetic conversion of light into electrical energy or thermal energy within an element capable of collecting light for example solar cell or photovoltaic, a solar collector.
- the materials in question for solar cells can be classically amorphous silicon, microcrystalline silicon, CdTe-based layers (cadmium telluride).
- the interface layer is situated on the rear face of the substrate and has a textured portion which comprises a repetition of periodic or non-periodic patterns in relief of pitch w, and of height h satisfying the following relations: w ⁇ , and preferably w ⁇ / 2, and more preferably w ⁇ / 4 and h ⁇ ⁇ / 4 and preferably h ⁇ ⁇ and more preferably h ⁇ 2 ⁇ , ⁇ belonging to the solar spectrum and being located at the maximum of energy conversion efficiency of the solar cell.
- the interface layer is situated on the rear face of the substrate and has a textured portion which comprises a repetition of periodic or non-periodic patterns in relief of pitch w, and of height h satisfying the following relations: ⁇ / 4 ⁇ w ⁇ 2 ⁇ and h is between 20 nm and 1 ⁇ m and preferably between between 30 nm and 500 nm and more preferably h between 50 nm and 200 nm, with ⁇ being located at a wavelength in which the solar spectrum is important but the conversion efficiency of the cell n ' is not its optimal.
- the conductive layer is deposited on the interface layer
- the interface layer is situated on the front face of the substrate and has a textured portion which comprises a repetition of periodic or non-periodic patterns in relief of pitch w, and of height h satisfying the following relations: ⁇ / 4 ⁇ w ⁇ 2 ⁇ and h is between 20 nm and 1 ⁇ m and preferably between 30 nm and 500 nm and more preferably h between 50 nm and 200 nm, with ⁇ being situated at a wavelength in which the Solar spectrum is important but the conversion efficiency of the cell is not its optimum.
- the interface layer has a refractive index close to that of the substrate
- the interface layer has a refractive index n ⁇ Substrate if the interface layer is placed on the front face of the substrate
- the interface layer has an index n such that ⁇ Substrat ⁇ n ⁇ n ⁇ co if the interface layer is placed between the substrate and the conductive layer the conductive layer is conforming with respect to the interface layer
- the conductive layer has a roughness different from that of the interface layer
- the interface layer is located on the rear face of the substrate and has a textured portion which comprises a repeating periodic or non-periodic patterns of pitch w substantially close to 300 nm for which it has a combined effect for antireflection for a first range of wavelengths and light trapping for a second wavelength range, the relief patterns comprise parallel lines the relief patterns comprise non-parallel lines and / or pads,
- the textured surface is obtained by embossing a sol-gel or polymer layer
- FIG. 1 is a sectional view of a solar cell incorporating a substrate according to the methods of the invention according to a first embodiment, the interface layer being positioned on the rear face of the substrate.
- FIG. 2 is a sectional view of a solar cell incorporating a substrate according to the methods of the invention according to a second embodiment, the interface layer being positioned on the front face of the substrate.
- FIG. 3 illustrates the energy conversion efficiencies E ( ⁇ ) of two typical photovoltaic cells (amorphous Si, and microcrystalline Si) as a function of the wavelength of the light.
- FIG. 4 illustrates a first variant embodiment of the invention with an anti-reflective effect
- FIG. 5 illustrates a second variant embodiment of the invention with a light trapping effect.
- FIG. 6 illustrates, for different step values, the evolution of the optical path as a function of the wavelength.
- an element capable of collecting light a solar or photovoltaic cell
- a substrate object of the invention there is shown an element capable of collecting light (a solar or photovoltaic cell) incorporating a substrate object of the invention.
- the transparent substrate 1 with glass function can for example be entirely of glass. It may also be a thermoplastic polymer such as a polyurethane or a polycarbonate or a polymethylmethacrylate.
- the entire glass-function substrate consists of material (x) having the best possible transparency and preferably having a linear absorption. less than 0.01 mm 1 in the part of the spectrum useful for the application (solar module), generally the spectrum ranging from 380 to 1200 nm.
- the substrate 1 according to the invention can have a total thickness ranging from 0.5 to 10 mm when used as a protective plate of a photovoltaic cell of various technologies (amorphous silicon, micro-crystalline silicon). In this case, it may be advantageous to subject this plate to a heat treatment (of the quenching type for example).
- A defines the front face of the substrate directed towards the light rays (this is the external face), and B the rear face of the substrate directed towards the rest of the solar module layers (it is acts of the internal face).
- an interface layer 2 is deposited on the B side of the substrate.
- This interface layer 2 is obtained by spin coating, flow coating, spray coating, screen printing or any other liquid layer deposition technique. thin, and is based on a polymer or sol gel.
- the sol-gel layers that can be used are generally liquid layers of inorganic oxide precursor such as SiO 2, Al 2 O 3, TiO 2, for example in solution in a water-alcohol mixture. These layers harden on drying, with or without auxiliary heating means.
- precursors of SiO 2 are tetraethoxysilane (TEOS) or methyltriethoxysilane (MTEOS).
- TEOS tetraethoxysilane
- MTEOS methyltriethoxysilane
- Organic functions can be included in these precursors and the silica finally obtained.
- fluorinated silanes have been described in the document
- PET poly (ethylene terephthalate)
- polystyrene polyacrylates such as poly (methyl methacrylate), poly (butyl acrylate), poly (methacrylic acid), poly (2-hydroxyethyl methacrylate) and their copolymers,
- polyurethane (meth) acrylates polyurethane (meth) acrylates, polyimides such as polymethylglutarimide,
- polysiloxanes such as polyepoxysiloxanes
- polybisbenzocyclobutenes ... alone or in copolymers or mixtures of several of them.
- the said patterns are then produced on the surface of this interface layer 2 by either an embossing technique, or by a photolithography technique, or by any texturing technique (chemical etching, laser transfer ablation, ion exchange, photorefractive effect or electro-optical).
- the embossing method consists in structuring a surface portion of the glass-function substrate by forming an array of patterns according to sub-millimetric characteristic dimensions, the surface structuring by plastic or viscoplastic deformation being performed by contact with a structured element called a mask and by exerting pressure, the structuring being effected by a continuous movement of the mask parallel to the surface of the product and / or by a continuous movement of said product parallel to the surface of the product.
- the speed of the movement and the duration of the contact, under pressure, between the product and the mask are adjusted according to the nature of the surface to be structured in particular: its viscosity, its surface tension; and possibly depending on the type of desired patterns (most faithful reproduction of the pattern of the mask, or deliberately truncated ).
- the mask pattern is not necessarily the negative of the replicated pattern.
- the final pattern can be formed with several masks or by several passes.
- the mask may have a plurality of areas with distinct patterns in size (width and height) and / or orientation and / or distance.
- Another possible method of manufacturing the network according to the invention comprises a photolithography. This method generally consists in first providing the transparent substrate with a first layer in which said raised patterns can be formed. This first layer is comparable to the sol-gel or polymer layer reported from the embossing process. It can also be of the same nature as this one, in particular silica. In a second step of the process, a second layer of a photoresist is deposited. This is hardened in defined locations, by exposure to targeted radiation. Thus is formed a mask, above the first layer to be etched, after removal of the uncured portions of the photoresist. Then, in the same manner as described above, in the optional step of the embossing process. Any residues of the photoresist can be removed.
- Another method of manufacturing the network according to the invention comprises the transfer of a nanostructured layer.
- a layer in adhesion on a first support is put in adhesion on a second, so as to constitute a device according to the invention.
- the layer may be of plastics material or the like.
- Another useful method is based on ion exchange, for example Na + ions by Ag + in a mineral glass.
- a photorefractive effect according to which a modulated light induces a spatial modulation of the refraction index of the material (example: photorefractive crystal in barium titanate).
- an electro-optical effect in which an electric field induces a spatial modulation of the refractive index of the material.
- this process may not necessarily lead to perfect geometric shapes.
- the pattern in the case of sharp-angled patterns, the pattern can be rounded without affecting the required performance.
- a so-called "fly-eye" profile is produced, namely that the plurality of periodic or non-periodic reliefs has the following geometrical characteristics: the pitch w and the height h of the pattern satisfy the following relations: w ⁇ , and preferably w ⁇ / 2, and more preferably w ⁇ / 4 and h ⁇ ⁇ / 4 and preferably h ⁇ ⁇ and more preferably h
- the patterns may, for example, be cone-shaped or pyramid-shaped polygonal in shape such as triangular or square or rectangular or hexagonal or octagonal, said patterns being convex, that is to say protruding from the general plane of the layer. interface or be concave, that is to say coming hollow in the mass of the interface layer. All of these patterns can extend on the surface and form parallel or non-parallel lines (in fact generate pads).
- the material chosen to constitute the material of the interface layer has a refractive index substantially similar to or close to that of the material constituting the glass-function substrate (approximately 1.50).
- TCO Transparent Conductive Oxide
- tin oxide in particular fluorine or antimony
- the precursors that can be used in the case of CVD deposition may be organo-metallic or tin halides associated with a fluorine precursor of the hydrofluoric acid or trifluoroacetic acid type
- doped zinc oxide in particular with aluminum
- the precursors that can be used, in the case of CVD deposition may be organometallic or zinc and aluminum halides
- doped indium oxide, in particular with tin the precursors that can be used in the case of CVD deposition can be organo-metallic or tin and indium halides).
- the conductive layer 3 has a resistance per square of at most 30 ohms / square, in particular at most 20 ohms / square, preferably at most 10 or 15 ohms / square. It is generally between 5 and 12 ohms / square.
- the interface layer has an index n such that ⁇ n V erre ⁇ n ⁇ n ⁇ co if the interface layer is placed between the glass and the conductive layer 3 in TCO
- a second anti-reflection effect is obtained between the conductive layer 3 and the functional layer 4.
- the increase in transmission will be of the order from 3 to 4% - If the contact zone is not in conformity (that is to say that the conductive layer 3 has a different texturing (formation of grains for example) than that of the interface layer 2), this second texture can help light trapping and extend the path of light in the functional layer of the solar cell.
- a structure is produced which diffuses or diffracts the light.
- the textured portion of the interface layer 2 comprises a plurality of periodic or non-periodic reliefs that have the following geometrical characteristics: the pitch w, and the height h satisfy the following relations: ⁇ / 4 ⁇ w ⁇ 2 ⁇ and h is included between 20 nm and 1 ⁇ m and preferably between 30 nm and 500 nm and more preferably h between 50 nm and 200 nm.
- the wavelength ⁇ which is chosen corresponds to a wavelength in which the solar spectrum is important but the conversion efficiency of the cell is not its optimum. In this way the wavelengths travel a longer distance in the solar cell and the probability of being converted is greater.
- ⁇ will be chosen between 550 and 750 nm (efficiency too low beyond this value).
- ⁇ crystalline silicon see FIG. 3
- ⁇ will be chosen between 500 and 650 nm and between 800 and 1000 nm.
- the patterns may, for example, be cone-shaped or pyramid-shaped polygonal in shape such as triangular or square or rectangular or hexagonal or octagonal, said patterns being convex, that is to say protruding from the general plane of the layer. interface or be concave, that is to say coming hollow in the mass of the interface layer.
- TCO Transparent Conductive Oxide
- doped tin oxide in particular fluorine or antimony
- the precursors that can be used in the case of CVD deposition may be organo-metallic or tin halides associated with a fluorine precursor of the hydrofluoric acid or trifluoroacetic acid type
- doped zinc oxide in particular with aluminum
- the precursors that can be used, in the case of CVD deposition may be organometallic or zinc and aluminum halides
- doped indium oxide, in particular with tin the precursors that can be used in the case of CVD deposition can be organo-metallic or tin and indium halides).
- the conductive layer 3 has a resistance per square of at most 30 ohms / square, in particular at most 20 ohms / square, preferably at most 10 or 15 ohms / square. It is generally between 5 and 12 ohms / square.
- the conductive layer 3 is covered by a functional layer 4 of a solar cell, there is a diffractive effect (the light rays are scattered or diffracted at the interface layer).
- the conducting layer 3 conforms to the texturing coming from the interface layer and in addition has a certain intrinsic roughness, then, in this case, the interface zone between the conductive layer 3 and the functional layer 4 will present a dual-scale texturing, a first scale being given by the textured interface layer, the second scale from the intrinsic roughness of the conductive layer.
- This double-scale roughness makes it possible to obtain an improved "light trapping" phenomenon.
- the roughness is non-uniform, random. There are no regular patterns at the interface layer surface and the conductive layer, but varying sizes of protuberances and / or troughs at the surface of the layers, distributed randomly over any said surface. This roughness will already allow a diffusion of the light transmitted by the important substrate, and mainly "forwards", that is to say so as to diffuse the light, but mainly towards the inside of the solar cell .
- ⁇ between 550 and 750 nm
- ⁇ between 550 and 750 nm
- ⁇ will be chosen between 500 and 650 nm and between 800 and 1000 nm.
- the functional layer 4 is covered by a conductive layer 5 to serve as a second electrode to the solar module.
- This conductive layer 5 is made for example of silver by a vacuum sputtering technique (magnetron). Subsequently, this glass plate 1 provided with all the previously explained layers is fixed via a interlayer lamination 6 to a counter glass 7, thus conforming a solar cell or photovoltaic.
- FIG. 2 shows another embodiment of the invention which differs from that illustrated in FIG. 1 simply by the position of the interface layer 2 relative to the substrate.
- the interface layer 2 is on the face A of the substrate 1.
- the interface layer has a refractive index n ⁇ n ve rre.It makes it possible to diffuse or diffract the incident light so that the light rays traveling through the substrate 1, then in the conductive layer 3, then the functional layer 4, at high angles of incidence, thereby increasing the phenomenon of light trapping. This scattering or diffraction of light is obtained for specific wavelengths.
- Embossings having a pitch w and a height h which satisfy the following relations ⁇ / 4 ⁇ w ⁇ 2 ⁇ and h is between 20 nm and 1 ⁇ m and preferably between 30 nm and 500 nm and more preferably h are used. between 50 nm and 200 nm.
- ⁇ between 550 and 750 nm (efficiency too low beyond this value) for amorphous silicon.
- ⁇ will be chosen between 500 and 650 nm and between 800 and 1000 nm.
- the substrate according to the invention finds its use in a solar cell.
- a barrier layer can be applied at certain wavelengths, for example in ultraviolet light.
- an anti-fouling layer such as a layer of TiO 2, in particular a layer which is the subject of the patent application EP 1087916, or a SiO 2 antifouling layer or Si oxycarbide or Si oxynitride or Si oxycarbonitride as described in WO 01/32578.
- FIG. 4 illustrates an antireflection configuration in "fly-eye” according to the first variant embodiment.
- An interface layer 2 is deposited on side B of a glass substrate 1.
- This layer 2 is structured and has trapezoidal grooves.
- the depth h of the pattern is 900 nm.
- Table 1 below gives the reflection values between the glass substrate and the conductive layer 3, with the presence of the interface layer 2 and without this interface layer 2.
- Table 1 Reflection at the glass / conductive layer interface in the presence of an interface layer 2 having an antireflection effect (structured layer in a fly eye) or in the absence of an interface layer.
- the antireflection effect of the interface layer appears obvious, with a reflection that goes from about 2% to less than 0.1% for all angles of incidence.
- Example 2 illustrates the second variant embodiment of the invention, namely the increase of the optical path.
- An interface layer 2 is deposited on side B of a glass substrate 1.
- This interface layer 2 is structured and has grooves having a sinusoidal profile. The pitch of the sinusoid is w and the height h.
- a transparent conductive layer 3 forming a TCO, of thickness e, conformably follows the structuring of the textured interface layer 2. This results in an increase in the path of light in the functional layer 4. If a light ray is found in the functional layer 4 with an angle ⁇ relative to the normal to the cell, the optical path in the active medium will increase by a factor l / cos ( ⁇ ) with respect to a normal radius of the cell.
- the increase in the optical path as a function of the wavelength ⁇ of the light is given below, for different steps w of textures.
- the increase A (in%) of the optical path as a function of the wavelength of the light ⁇ in the layer is given below. functional 4 for different w steps of the texture.
- the increase A (in%) was calculated by averaging over a range of angles of incidence in the air, between 0 ° and 50 °.
- light trapping is particularly effective for ⁇ between 500 and 650 nm and between 750 and 900 nm, while the “light trapping” is less efficient around 700 nm, the wavelength at which this cell possesses an optimal conversion efficiency, making the phenomenon of light trapping less necessary.
- Example 3 a structure is presented which has both an anti-reflective effect in "fly eye” and a “light trapping” effect.
- this configuration not only is it possible to obtain a trapping of the light with increase of the optical path (light trapping), but an antireflection effect is obtained between the glass (medium 1) and the functional layer 4.
- an increase in light transmission of the order of 4% is obtained (value obtained by averaging on incidence angles between 0 ° and 50 °).
- this structure allows an optical path increase of the order of 20% for a second wavelength range between 600 and 750 nm.
- this structure will have a double beneficial effect for a functional layer 4 of amorphous silicon type such as that of FIG. 3.
- the structure induces an anti-reflective effect while for wavelengths between 600 and 750 nm, where the functional layer 4 is less effective, we obtain a "light trapping" effect.
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- Engineering & Computer Science (AREA)
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR0754875A FR2915834B1 (en) | 2007-05-04 | 2007-05-04 | TRANSPARENT SUBSTRATE WITH IMPROVED ELECTRODE LAYER |
PCT/FR2008/050768 WO2008148978A2 (en) | 2007-05-04 | 2008-04-28 | Transparent substrate with advanced electrode layer |
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EP2153471A2 true EP2153471A2 (en) | 2010-02-17 |
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EP08805722A Withdrawn EP2153471A2 (en) | 2007-05-04 | 2008-04-28 | Transparent substrate with advanced electrode layer |
Country Status (9)
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US (1) | US20100116332A1 (en) |
EP (1) | EP2153471A2 (en) |
JP (1) | JP2010526430A (en) |
KR (1) | KR20100016182A (en) |
CN (1) | CN101681937A (en) |
BR (1) | BRPI0810891A2 (en) |
FR (1) | FR2915834B1 (en) |
MX (1) | MX2009011912A (en) |
WO (1) | WO2008148978A2 (en) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2919429B1 (en) * | 2007-07-27 | 2009-10-09 | Saint Gobain | FRONT PANEL SUBSTRATE OF PHOTOVOLTAIC CELL AND USE OF A SUBSTRATE FOR A FRONT PANEL OF PHOTOVOLTAIC CELL |
JP5160565B2 (en) * | 2007-12-05 | 2013-03-13 | 株式会社カネカ | Integrated thin film photoelectric conversion device and manufacturing method thereof |
EP2190024A1 (en) * | 2008-11-19 | 2010-05-26 | Université de Neuchâtel | Photoelectric device with multiple junctions and method of manufacturing same |
DE102009006719A1 (en) * | 2009-01-29 | 2010-08-12 | Schott Ag | Thin film solar cell |
WO2010090142A1 (en) * | 2009-02-03 | 2010-08-12 | 株式会社カネカ | Substrate with transparent conductive film and thin film photoelectric conversion device |
DE102009029944A1 (en) * | 2009-06-19 | 2010-12-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solar cell and process for its production |
JP5548400B2 (en) * | 2009-07-02 | 2014-07-16 | 株式会社カネカ | Thin film photoelectric conversion device and manufacturing method thereof |
FR2948230B1 (en) | 2009-07-16 | 2011-10-21 | Saint Gobain | TEXTURED TRANSPARENT PLATE AND METHOD OF MANUFACTURING SUCH PLATE |
JP2011029289A (en) * | 2009-07-22 | 2011-02-10 | Toray Eng Co Ltd | Substrate provided with thin film, and solar cell using the substrate |
MX2012004141A (en) | 2009-10-08 | 2012-09-07 | Solarexcel B V | Optical structure with a flat apex. |
JP5659551B2 (en) * | 2010-04-28 | 2015-01-28 | ソニー株式会社 | Transparent conductive element, input device, and display device |
JP2012044147A (en) * | 2010-06-11 | 2012-03-01 | Moser Baer India Ltd | Antireflection barrier layer in photoelectric device |
DE102010030301A1 (en) * | 2010-06-21 | 2011-12-22 | Solayer Gmbh | Substrate with superficially structured surface electrode |
DE102010049976B4 (en) * | 2010-10-18 | 2017-02-02 | Universität Stuttgart | Solar cell with textured electrode layer and method for producing such |
DE102010051606A1 (en) * | 2010-11-16 | 2012-05-16 | Schott Solar Ag | Glass pane for thin-film solar module production |
KR20120053403A (en) * | 2010-11-17 | 2012-05-25 | 삼성전자주식회사 | Thin film solar cell and manufacturing method thereof |
JP5071563B2 (en) * | 2011-01-19 | 2012-11-14 | ソニー株式会社 | Transparent conductive element, input device, and display device |
KR101143477B1 (en) * | 2011-01-28 | 2012-05-22 | (재)나노소자특화팹센터 | Organic solar cell and method of fabricating the same |
FR2971060B1 (en) * | 2011-01-31 | 2013-08-09 | Saint Gobain | TRANSPARENT ELEMENT WITH DIFFUSE REFLECTION |
JP5494771B2 (en) * | 2011-09-30 | 2014-05-21 | ダイキン工業株式会社 | Condensing film, solar cell module, and transfer mold |
KR101421026B1 (en) * | 2012-06-12 | 2014-07-22 | 코닝정밀소재 주식회사 | Light extraction layer substrate for oled and method of fabricating thereof |
DE102012214253A1 (en) * | 2012-08-10 | 2014-06-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Laser-based method and processing table for metallizing the rear side of a semiconductor device |
CN103646998B (en) * | 2013-12-16 | 2016-08-17 | 陕西师范大学 | Strengthen the texture transversion malposition method that silicon-film solar-cell light absorbs |
KR101441607B1 (en) * | 2014-02-13 | 2014-09-24 | 인천대학교 산학협력단 | High Efficiency Photoelectric Element and Method for Preparing the Same |
CN104867995B (en) * | 2015-04-27 | 2017-03-01 | 电子科技大学 | Two-dimensional Cosine wavy surface light trapping structure and the solar film battery based on this structure |
US10439062B2 (en) * | 2016-09-09 | 2019-10-08 | Infineon Technologies Ag | Metallization layers for semiconductor devices and methods of forming thereof |
US10937915B2 (en) | 2016-10-28 | 2021-03-02 | Tesla, Inc. | Obscuring, color matching, and camouflaging solar panels |
WO2019111191A1 (en) * | 2017-12-06 | 2019-06-13 | Tata Steel Limited | Hybrid transparent conducting electrode |
FR3089683B1 (en) * | 2018-12-10 | 2020-12-11 | Commissariat Energie Atomique | optronic device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4497974A (en) * | 1982-11-22 | 1985-02-05 | Exxon Research & Engineering Co. | Realization of a thin film solar cell with a detached reflector |
JPS59152673A (en) * | 1983-02-19 | 1984-08-31 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converter |
US4512848A (en) * | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
JPS61241983A (en) * | 1985-04-18 | 1986-10-28 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS62198169A (en) * | 1986-02-25 | 1987-09-01 | Fuji Electric Corp Res & Dev Ltd | Solar cell |
JPS63143875A (en) * | 1986-12-08 | 1988-06-16 | Hitachi Ltd | Solar cell |
US4808462A (en) * | 1987-05-22 | 1989-02-28 | Glasstech Solar, Inc. | Solar cell substrate |
AUPN679295A0 (en) * | 1995-11-23 | 1995-12-14 | Unisearch Limited | Conformal films for light-trapping in thin silicon solar cells |
JP3286577B2 (en) * | 1997-09-10 | 2002-05-27 | 株式会社日野樹脂 | Solar cell module |
JP3490909B2 (en) * | 1998-10-12 | 2004-01-26 | シャープ株式会社 | Photoelectric conversion device and method of manufacturing the same |
US6335479B1 (en) * | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
JP3776606B2 (en) * | 1998-11-06 | 2006-05-17 | 三洋電機株式会社 | Method for producing transparent electrode substrate |
AUPR719801A0 (en) * | 2001-08-23 | 2001-09-13 | Pacific Solar Pty Limited | Glass beads coating process |
EP1443527A4 (en) * | 2001-10-19 | 2007-09-12 | Asahi Glass Co Ltd | Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element |
JP2004172496A (en) * | 2002-11-21 | 2004-06-17 | Tdk Corp | Photoelectric converting element and method for manufacturing photoelectric converting element |
US6958207B1 (en) * | 2002-12-07 | 2005-10-25 | Niyaz Khusnatdinov | Method for producing large area antireflective microtextured surfaces |
JP4606775B2 (en) * | 2004-05-25 | 2011-01-05 | 電源開発株式会社 | Concave oxide film structure |
-
2007
- 2007-05-04 FR FR0754875A patent/FR2915834B1/en not_active Expired - Fee Related
-
2008
- 2008-04-28 MX MX2009011912A patent/MX2009011912A/en active IP Right Grant
- 2008-04-28 EP EP08805722A patent/EP2153471A2/en not_active Withdrawn
- 2008-04-28 KR KR1020097022980A patent/KR20100016182A/en not_active Application Discontinuation
- 2008-04-28 WO PCT/FR2008/050768 patent/WO2008148978A2/en active Application Filing
- 2008-04-28 BR BRPI0810891-9A2A patent/BRPI0810891A2/en not_active IP Right Cessation
- 2008-04-28 CN CN200880014796A patent/CN101681937A/en active Pending
- 2008-04-28 JP JP2010504812A patent/JP2010526430A/en active Pending
- 2008-04-28 US US12/598,042 patent/US20100116332A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
---|
See references of WO2008148978A2 * |
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US20100116332A1 (en) | 2010-05-13 |
WO2008148978A2 (en) | 2008-12-11 |
FR2915834B1 (en) | 2009-12-18 |
WO2008148978A3 (en) | 2009-02-19 |
CN101681937A (en) | 2010-03-24 |
MX2009011912A (en) | 2009-11-18 |
BRPI0810891A2 (en) | 2014-10-29 |
JP2010526430A (en) | 2010-07-29 |
FR2915834A1 (en) | 2008-11-07 |
KR20100016182A (en) | 2010-02-12 |
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