EP2102898A4 - Reel-to-reel reaction of precursor film to form solar cell absorber - Google Patents

Reel-to-reel reaction of precursor film to form solar cell absorber

Info

Publication number
EP2102898A4
EP2102898A4 EP07872342A EP07872342A EP2102898A4 EP 2102898 A4 EP2102898 A4 EP 2102898A4 EP 07872342 A EP07872342 A EP 07872342A EP 07872342 A EP07872342 A EP 07872342A EP 2102898 A4 EP2102898 A4 EP 2102898A4
Authority
EP
European Patent Office
Prior art keywords
reel
solar cell
reaction
precursor film
form solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07872342A
Other languages
German (de)
French (fr)
Other versions
EP2102898A2 (en
Inventor
Bulent M Basol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SoloPower Inc
Original Assignee
SoloPower Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SoloPower Inc filed Critical SoloPower Inc
Publication of EP2102898A2 publication Critical patent/EP2102898A2/en
Publication of EP2102898A4 publication Critical patent/EP2102898A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
EP07872342A 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber Withdrawn EP2102898A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86538506P 2006-11-10 2006-11-10
PCT/US2007/084432 WO2008085604A2 (en) 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber

Publications (2)

Publication Number Publication Date
EP2102898A2 EP2102898A2 (en) 2009-09-23
EP2102898A4 true EP2102898A4 (en) 2011-06-29

Family

ID=39609232

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07872342A Withdrawn EP2102898A4 (en) 2006-11-10 2007-11-12 Reel-to-reel reaction of precursor film to form solar cell absorber

Country Status (6)

Country Link
EP (1) EP2102898A4 (en)
JP (1) JP2010509779A (en)
KR (1) KR20090110293A (en)
CN (1) CN101578707B (en)
TW (1) TW200832726A (en)
WO (1) WO2008085604A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555864B (en) * 2007-09-11 2016-11-01 中心熱光電股份公司 Method and arrangement for providing chalcogens
US8163090B2 (en) 2007-12-10 2012-04-24 Solopower, Inc. Methods structures and apparatus to provide group VIA and IA materials for solar cell absorber formation
US8323408B2 (en) 2007-12-10 2012-12-04 Solopower, Inc. Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation
KR20110097908A (en) * 2008-11-28 2011-08-31 볼커 프로브스트 Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates
DE102009009022A1 (en) * 2009-02-16 2010-08-26 Centrotherm Photovoltaics Ag Method and device for coating flat substrates with chalcogens
TWI509107B (en) * 2009-03-06 2015-11-21 Centrotherm Photovoltaics Ag Verfahren und vorrichtung zur thermischen umsetzung metallischer precusorschichten in halbleitende schichten mit chalkogenquelle
DE102009011496A1 (en) * 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Process and device for the thermal conversion of metallic precursor layers into semiconducting layers with chalcogen recovery
DE102009049570B3 (en) * 2009-10-15 2011-02-17 Fhr Anlagenbau Gmbh Arrangement for gas separation and its use
TWI398013B (en) * 2009-12-18 2013-06-01 Jenn Feng New Energy Co Ltd Method and system for forming non-vacuum copper indium gallium sulphide selenium absorption layer and cadmium sulfide buffer layer
US20130029450A1 (en) * 2010-04-19 2013-01-31 Korea Institute Of Industrial Technology Method for manufacturing solar cell
BR112013018999A2 (en) * 2011-03-10 2017-01-31 Saint Gobain method to produce cztsse pentanary compound semiconductor and thin film solar cell
JP2012222157A (en) * 2011-04-08 2012-11-12 Hitachi Kokusai Electric Inc Substrate processing apparatus and method of manufacturing solar cell
ES2527644B1 (en) * 2012-02-29 2016-04-27 Alliance For Sustainable Energy, Llc SYSTEMS AND METHODS TO FORM SOLAR CELLS WITH FILMS OF CuInSe2 and Cu (In, Ga) Se2
CN103361603A (en) * 2012-03-29 2013-10-23 常熟卓辉光电科技有限公司 Vacuum evaporation equipment of semiconductor film material and preparation method of OLED (Organic Light Emitting Diode) conductive layer
DE102012205378A1 (en) * 2012-04-02 2013-10-02 Robert Bosch Gmbh Process for the production of thin-film solar modules and thin-film solar modules obtainable by this process
KR101461315B1 (en) * 2012-06-19 2014-11-12 가부시키가이샤 스크린 홀딩스 Heat treatment apparatus and heat treatment method
JP5933837B2 (en) 2012-07-09 2016-06-15 サン−ゴバン グラス フランスＳａｉｎｔ−Ｇｏｂａｉｎ Ｇｌａｓｓ Ｆｒａｎｃｅ System and method for processing a substrate
KR101373314B1 (en) 2012-12-31 2014-03-12 (주)피앤테크 Apparatus for exhaust condensing of doping process tube for solar cell wafer
DE102014116696B4 (en) * 2014-11-14 2016-10-20 Von Ardenne Gmbh Vacuum chamber and method for operating a vacuum processing plant

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723507A (en) * 1986-01-16 1988-02-09 Energy Conversion Devices, Inc. Isolation passageway including annular region
EP0782176A2 (en) * 1995-12-22 1997-07-02 Canon Kabushiki Kaisha Deposited-film forming process and deposited-film forming apparatus
US20040063320A1 (en) * 2002-09-30 2004-04-01 Hollars Dennis R. Manufacturing apparatus and method for large-scale production of thin-film solar cells
US20040161533A1 (en) * 1998-04-20 2004-08-19 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148715A (en) * 1988-11-29 1990-06-07 Canon Inc Apparatus for forming semiconductor device continuously
JP2819056B2 (en) * 1990-07-24 1998-10-30 キヤノン株式会社 Method and apparatus for forming deposited film
JP3386127B2 (en) * 1992-09-22 2003-03-17 シーメンス アクチエンゲゼルシヤフト How to quickly create chalcopyrite semiconductor on a substrate
JP3402637B2 (en) * 1992-12-28 2003-05-06 キヤノン株式会社 Method of manufacturing solar cell, manufacturing apparatus thereof, and method of manufacturing long sheet substrate
JP3571785B2 (en) * 1993-12-28 2004-09-29 キヤノン株式会社 Method and apparatus for forming deposited film
JPH11135811A (en) * 1997-10-28 1999-05-21 Yazaki Corp Cis-based solar cell module and its manufacture
WO2002084708A2 (en) * 2001-04-16 2002-10-24 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723507A (en) * 1986-01-16 1988-02-09 Energy Conversion Devices, Inc. Isolation passageway including annular region
EP0782176A2 (en) * 1995-12-22 1997-07-02 Canon Kabushiki Kaisha Deposited-film forming process and deposited-film forming apparatus
US20040161533A1 (en) * 1998-04-20 2004-08-19 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing process
US20040063320A1 (en) * 2002-09-30 2004-04-01 Hollars Dennis R. Manufacturing apparatus and method for large-scale production of thin-film solar cells

Also Published As

Publication number Publication date
WO2008085604A3 (en) 2008-10-16
KR20090110293A (en) 2009-10-21
EP2102898A2 (en) 2009-09-23
JP2010509779A (en) 2010-03-25
CN101578707A (en) 2009-11-11
CN101578707B (en) 2012-08-22
WO2008085604B1 (en) 2008-12-24
WO2008085604A2 (en) 2008-07-17
TW200832726A (en) 2008-08-01

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