EP2091708A1 - Dispositif de separation d'une structure empilee et procede associe. - Google Patents
Dispositif de separation d'une structure empilee et procede associe.Info
- Publication number
- EP2091708A1 EP2091708A1 EP07820925A EP07820925A EP2091708A1 EP 2091708 A1 EP2091708 A1 EP 2091708A1 EP 07820925 A EP07820925 A EP 07820925A EP 07820925 A EP07820925 A EP 07820925A EP 2091708 A1 EP2091708 A1 EP 2091708A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- stack
- separator
- contact
- relative movement
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000003780 insertion Methods 0.000 claims abstract description 23
- 230000037431 insertion Effects 0.000 claims abstract description 23
- 230000035515 penetration Effects 0.000 claims abstract description 11
- 238000000926 separation method Methods 0.000 claims description 71
- 230000001154 acute effect Effects 0.000 claims description 10
- 230000001965 increasing effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000010070 molecular adhesion Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
- Y10T156/1972—Shearing delaminating means
Definitions
- the invention relates to a device for partially or totally separating a stacked structure, as well as a method using this device.
- a method for measuring the bonding energy has been described in 1988 in [1]. This method involves inserting a razor blade between two plates of a bonded structure, the blade being introduced by translation towards the center of the structure at the bonding interface and parallel to the plane of the bonding interface . At that time, this technique of inserting a blade into a structure was only used to measure the bonding energy and only caused a partial opening of the bonded structure over a certain length L.
- the object of the invention is to provide a device and a method for separating a stack having a weakened zone, for example a bonded structure consisting of two layers around a bonding interface or a structure having a weakened zone, obtained for example by implantation of gaseous species (for example hydrogen), which make it possible to separate this stack in two distinct layers on either side of the weakened zone while decreasing the introduction of impurities and the appearance of scratches on the faces of said separated layers.
- gaseous species for example hydrogen
- a device for separating a stack into two distinct parts comprising a first part, a second part and a weakened zone interposed between said first and second parts. and an insertion zone, located at the periphery of the stack at or near the embrittled zone, extending over all or part of the periphery of the stack, said device comprising:
- At least one separator capable of penetrating into the insertion zone at a distance, referred to as the penetration distance, until it comes into contact with the first part of the stack at at least one first point of contact situated on the periphery of the stacking and coming into contact with the second part of the stack in at least one second point of contact located at the periphery of the stack,
- the driving means capable of causing the separator to enter the insertion zone up to said penetration distance and able to animate said separator and the stack of a relative movement, said device being characterized in that the separator is configured such that the distance between the first point of contact and the second point of contact increases during the relative movement, while the penetration distance remains substantially constant, the first and second contact points remaining at the periphery of the stacking during the relative movement.
- the relative movement is an essentially tangential movement.
- the separator and the stack are moved relatively so that the stack can, for example, progress along the perimeter of the separator at the weakened zone.
- the perimeter of the separator corresponds to the circumference of the separator if the separator has a circumference of circular shape.
- the separator is configured so that the distance between the first point of contact and the second point of contact increases as the separator progresses along the perimeter of the stack so as to move the two parts apart. one of the other.
- the separation device makes it possible to induce a separation of a stacked structure from the peripheral zone of the stacked structure.
- the separation is ensured by a gradual increase in the distance of the contact points, these contact points remaining in the peripheral zone of the stack, due to the relative movement between the structure and the separator.
- the relative movement between the structure and the separator is essentially tangential.
- peripheral zone is meant an area at the edge of the stacked structure, such as, for example, the zone of the plate edge chamfers, the zone where the plates have been cut off, the zone in which no further process is to be envisaged.
- the area device is usually referred to as an exclusion zone, as opposed to the active area in which the integrated circuits are made.
- the insertion zone is adapted to the insertion of the separator (for example a notch), that is to say that it allows the insertion of the separator.
- it consists of the two chamfers of the glued plates to be separated at the level of this bonding interface or of a weakened zone situated in the vicinity of this bonding interface.
- the relative movement of the separator relative to the stack is obtained by rotation of the separator on itself.
- the relative movement of the separator with respect to the stack is obtained by rotating the stack around the separator.
- the relative movement of the separator relative to the stack is further obtained by rotating the stack on itself.
- the relative movement of the separator relative to the stack is further obtained by rotating the separator around the stack.
- the relative movement of the separator with respect to the stack is further obtained by placing the separator in translation tangentially to the stack.
- the relative movement of the separator with respect to the stack is obtained by translation of the stack along the separator.
- the relative movement of the separator relative to the stack is further obtained by rotating the stack on itself.
- the relative movement of the separator relative to the stack is further obtained by rotation of the separator around the stack.
- the separator comprises an angled edge portion whose angle is increasing along at least part of its periphery, this angular edge portion being intended to come into contact with the substrate during the relative motion.
- the separator comprises a cone, truncated or not, the generatrix of said cone being able to come into contact with the stack at the first point of contact and the base of said cone being able to come into contact stacking at the second point of contact.
- the generator of the cone comes into contact with the first part of the stack and the base of said cone comes into contact with the second part of the stack.
- the separator comprises two cones, truncated or not, superposed according to their bases, the generatrix of the first cone being able to come into contact with the stack at the first point of contact and the generatrix of the second cone being adapted to come into contact with the stack at the second point of contact.
- the generatrix of the first cone comes into contact with the first part of the stack and the generatrix of the second cone comes into contact with the second part of the stack.
- the axes of the two cones are offset relative to each other.
- the axes of the two cones are inclined relative to each other.
- the separator comprises a prism, whose base is able to come into contact with the stack at the first point of contact and one of the faces is able to come into contact with the stack at the level of the second point of contact, the base and said face forming an acute angle, truncated or not.
- the base of the prism comes into contact with the first part of the stack and the face of the prism forming an acute angle with the base comes into contact with the second part of the stack.
- the separator comprises two prisms, each prism having a base and a face, the base and said face forming an acute angle, truncated or not, and the prisms being superimposed according to their bases, the faces of the two prisms being meant to come in contact respectively with the first and second parts of the stack.
- the weakened zone is a bonding interface, a plane of weakness or an excessive stress plane.
- the insertion zone is a hollow zone.
- the first and second parts are layers.
- the separation obtained thanks to the device is complete or partial.
- the invention also relates to a method of separating a stack into two distinct parts, the stack comprising a first part, a second part and a weakened zone interposed between said first and second parts, and an insertion zone, situated in periphery of the stack at or near the weakened zone, extending over all or part of the periphery of the stack.
- This method comprises the following steps: a) providing at least one separator having an angled edge portion whose angle is increasing along at least a portion of its periphery, b) inserting the angular edge portion of said minus one separator in the insertion zone according to a distance, said penetration distance, to bring the separator into contact with at least the first part of the stack at a first point of contact and the second part of the stack at a second point of contact, c) animating the separator and the stack of a relative movement so that the angularly increasing edge portion of the separator remains in contact with the substrate during relative movement to increase the distance between the first and second contact points of the separator with the first and second portions of the stack, respectively, during relative movement, so that said parts deviate from each other, while the penetration distance remains substantially constant, the first and second contact points remaining at the periphery of the stack during the relative movement.
- the relative movement is an essentially tangential movement.
- the relative movement of the separator and the stack is obtained by rotation of the separator on itself.
- the relative movement of the separator and the stack is further obtained by rotation of the stack around the separator.
- the relative movement of the separator and the stack is further obtained by rotation of the stack on itself.
- the relative movement of the separator and the stack is further obtained by rotation of the separator around the stack.
- the relative movement of the separator and the stack is further obtained by translating the separator tangentially to one stack.
- the relative movement of the separator and the stack is further obtained by translation of the stack along the separator.
- the relative movement of the separator and the stack is further obtained by rotation of the stack on itself.
- the relative movement of the separator and the stack is further obtained by rotation of the separator around the stack.
- the separator is configured such that the distance between the first point of contact and the second point of contact increases during the relative movement of the stack with respect to the separator.
- the separator is a separator of the separation device described above.
- the increase in said distance between the first point of contact and the second point of contact is obtained by a system that dynamically adapts said distance on the separator.
- the system can for example, if the separator comes into contact with the stack at two of these walls, move these walls away from each other over time, advantageously progressive over time.
- steps a) and b) of the process are repeated N times
- N> 2 each time using a different separator having a distance between the first and second contact points of the separator with the first and second portions of the maximum stack greater than the maximum distance of the previously used separator.
- the separation is thus effected by the successive insertion of separators having a maximum distance between two points of contact of the separator with the stack of larger and larger.
- a particular case of this second embodiment consists in using separators whose maximum distance is constant (that is to say that it does not evolve during the relative movement of the separator and the stack, once the contact obtained).
- conical separators for example, whose base and the generator respectively come into contact with the first part and the second part of the stack, then separators will be chosen so the angle between the base and the generator is bigger and bigger.
- the distance between the first and the second contact point of the separator with the first and the second part of the stack, respectively, is constant for each separator.
- FIGS. 1 to 4 show examples of separators having the shape of a prism
- FIG. 5 represents an example of a separator composed of two cones joined at their bases
- FIG. 6 represents a schematic view of a cone presenting different generator angles
- FIGS. 7 to 16 represent top views of a device according to the invention comprising a separator and a stack (of circular shape), and in particular:
- FIGS. 7 to 10 illustrate exemplary embodiments in which the separator or the stack moves in a translation movement with respect to the stack or the separator, respectively
- FIGS. 11 and 12 illustrate exemplary embodiments in which the separator, and possibly the stack, rotate on themselves
- FIGS. 13 to 16 illustrate exemplary embodiments in which the separator or the stack rotates around the stack or the separator, respectively
- FIG. 17 represents a front view of a separator in contact with a stack according to the invention
- FIG. 18 represents an enlarged detail of FIG. 17,
- FIG. 19 represents a front view of a stack to be separated.
- the separation device makes it possible to dissociate layers of a stacked structure.
- the separation of the stack into two distinct parts can be performed at a bonding interface between two layers, at a plane corresponding to a plane of weakness or at a zone of excessive stress of the structure. stacked.
- the bonding interface corresponds to a plane of weak bonds between two bonded layers, for example, by molecular adhesion.
- these are plans other or smaller than the bonding interfaces, such as, for example, zones obtained by implantation of gaseous species in a substrate, an interface a deposited layer, a zone of different nature or morphology (for example a buried zone of porous oxide or silicon) or areas subjected to high stresses.
- the device according to the invention comprises at least one separator.
- the separator may be any body capable of inducing an increase in the spacing between the points of contact of this separator with the stack to be dissociated, this contact being limited to the peripheral area of the stack.
- the separator will be formed of two walls that meet to form a protruding part (acute angle) having a ridge .
- the edge of the separator may for example be circular or rectilinear. In a variant, this edge may be truncated. By “truncated” is meant truncated by a plane or curved surface.
- any body having a beveled portion may be used in a straight line, for example a prism.
- the separator may be a prism whose base b1 and the face ⁇ facing the base are oriented so as to form an acute angle ⁇ and join together forming a rectilinear edge 9 ( Figure 1).
- the end of the prism (that is, the part where the base and the face meet to form an acute angle) can also be truncated.
- the separator can also be formed by the association of two superimposed prisms according to their respective bases b1 and b2.
- Figure 2 there is illustrated an example of two superimposed prisms, having their truncated end and angles ⁇ , i and ⁇ , 2 identical.
- the ends have been truncated in a plane, but they could also have been truncated along a curved surface.
- the angles ⁇ , i and ⁇ , 2 could have been different.
- the ridge can also have other shapes.
- the separator may be a prism in which the base bl and the face al facing the base meet at a vertex to form an acute angle (Figure 3).
- the base bl and the face al facing the base can also get closer to each other, without joining ( Figure 4).
- Figure 3 The base bl and the face al facing the base can also get closer to each other, without joining ( Figure 4).
- Figure 4 To produce a separator having a circular-shaped edge, it is possible to use for example a cone, the generatrix of this cone then forming the acute angle edge.
- the axis of rotation of the separator is excentered with respect to its axis of symmetry, in the case where the separator is intended to be rotated, and / or if the structure to be separated is circular in shape and is intended to be rotated, the axis of rotation of the structure is excentered with respect to its axis of symmetry.
- the separator can be made by inclining the axes 2 of two cones with an angle ⁇ of about 20 ° relative to one another (see FIG. 5). It is also possible to vary the angle of the generator 1 relative to the axis 2 of each of the cones; for example, this angle can be 10 °, 20 °, 30 °, 45 ° or 60 °.
- the separator has different heights hi, h 2 , h 3 , h 4 , h 5 respectively for a depth p given, as illustrated in Figure 6, where the separator is constituted by a single cone.
- the separator is constituted by two cones
- the angles of the generatrices of the two cones can be chosen identical or different.
- the separator and the stacked structure to be disassociated must be moved relative to each other substantially tangentially to the stacked structure so that the distance between the points of contact between the separator and the layers of the stack varies from way to increase during the movement.
- the increase is gradual. This relative movement can be obtained in different ways by movement of the separator and / or the structure.
- the separator 14 can be translated in a tangential direction 11 to the stacked structure (FIG. 7) in order to induce the spacing of the stitches. contact.
- the separator 14 remains fixed, while the stack 5 performs a translational movement 12 along the edge 19 ( Figure 8) or a combination of these two translational movements.
- the separator 4 remains fixed while the stack rotates about itself about its axis of rotation 7, and about the axis of rotation 6 of the separator (FIG. 14),
- the separator 4 rotates about itself about its axis of rotation 6, while the stack rotates about itself about its axis of rotation 7, and about the axis of rotation 6 of the separator ( Figure 15) ,
- the separator 4 rotates about the axis of rotation 7 of the stack 5 and rotates about itself about its axis of rotation 6, while the stack rotates about itself about its axis of rotation 7 ( Figure 16).
- the stacked structure to be separated may be composed of two silicon plates 100 mm in diameter and 525 micrometers thick.
- the two silicon wafers are glued together by gluing molecular, technique well known to those skilled in the art: the two surfaces are prepared to be hydrophilic and clean, then the two plates are glued at room temperature. This gives a bonding energy of the order of 0.8 J / m 2 after heat treatment at 500 0 C for two hours.
- the plates have at the periphery a chamfer 10 (i.e., a zone of reduced thickness). After bonding, these chamfers generate at the periphery of structure at the bonding interface a non-bonded zone 10, which will facilitate the subsequent insertion of the separator between the two plates.
- a chamfer 10 i.e., a zone of reduced thickness
- the separator is made by joining two cones according to their bases, the two cones having their axes inclined relative to each other by an angle of about 20 °.
- the vertices of the cones have been truncated.
- variable separation height As the axes of the two cones are inclined, we obtain a variable separation height.
- the advantage of having a variable separation height is that a gradual and tangential effect of separation of the two plates is obtained.
- the separation height of the plates of the stacked structure varies from a few microns to about 3 mm, in the peripheral zone of the stack.
- the separator 4 is chosen to rotate the separator 4 on itself about its axis of rotation 6.
- the rotation of the separator is performed slowly.
- rotational speeds of 0.1, 1, 2, or 5 revolutions per hour.
- the rotation of the separator (as well as the possible rotation of the stack) can be performed electrically, automatically, progressively, in a discrete or continuous mode.
- the stacked structure to be separated can be driven in a rotational movement about the axis of the separator.
- the separator can for example rotate in steps of one tenth (l / 10th) of each turn and between not rotating the structure itself of at least one full turn.
- the separator 4 is brought into contact (101, 102) with the edges of each of the two plates of the structure 5 to be separated, at the level of the unbonded zone (forming a zone 10 adapted to the insertion of the blade).
- This unglued zone is in the vicinity of the bonding interface 8, corresponding in this case to the weakened zone at which it is desired to obtain a separation (FIGS. 17 and 18).
- the separation height h 1 is smaller than the separation height h 2 diametrically opposite: when the separator has made a half-turn, the separation height will therefore have changed and the pressure exerted on the walls at the points of contact 101 and 102 will also have increased.
- the contacting requires a radial relative movement between the structure and the separator but which is limited to the structure edge.
- the peripheral area in which there is a contact (101, 102) between the tangential progressively separating separator and each of the plates of the bonded structure is located about 49 mm from the center of the bonded structure for 100 mm diameter structures.
- the separation height imposed on the periphery of plates bonded by the rotation of the separator is sufficient to induce complete separation of the stacked structure.
- the structure to be separated is placed on a holding means, for example a plate, which allows a rotation of the structure about its axis, continuous or not, in a single direction or allowing an alternation of directions , simultaneous or not with respect to the rotation of the separator.
- the speed of rotation can be constant or variable.
- the rotational speed of the platen is continuous and simultaneous with the separator. It can be 10 turns per hour, 5 turns per hour, 1 turn per hour or 0.1 turn per hour.
- the rotation of the plate is in the same direction and at the same speed as the rotation of the separator.
- the stacked structure to be separated may be composed of two silicon plates 100 mm in diameter and 525 micrometers thick.
- both surfaces of the adhesive plates were prepared to be hydrophilic and compatible with subsequent molecular bonding.
- the two plates were glued and thermally treated at 200 ° C. for two hours to obtain, for example, a bonding energy of the order of 0.6 J / m 2 .
- the separator was made by joining, according to their bases, two truncated coaxial cones. The tips of the cones have been truncated so that the separator is less cumbersome. In this example, we chose a generator angle of 45 °.
- the separator as well as the stacked structure are rotated on themselves.
- the separator is brought into contact with the edges of each of the two plates of the structure to be separated, in the zone where these plates have a chamfer.
- the separator and the stacked structure are put in rotation on themselves in the same direction or opposite directions.
- the rotation of the separator is carried out slowly, for example, with rotation speeds of 5 revolutions per hour, 2 revolutions per hour, 1 revolution per hour or 0.1 revolution per hour.
- the separation height of the separator will gradually change as the separator rotates.
- the separator is moved so that the separation height increases.
- it is chosen to place the separator in the chamfer at the level where the separator has a minimum separation height.
- the separation height of the plates of the stacked structure can vary from a few microns to about 1.5 mm, in the peripheral zone of the structure. Such a separation height imposed on the periphery of the bonded plates is sufficient to induce complete separation of the stacked structure.
- the stacked structure to be separated is composed of two silicon plates assembled by molecular bonding according to a bonding interface 18. Before bonding, one of the two plates has undergone a hydrogen implantation to create a buried fragile zone microcavities 22, for example 1 micron of its surface (see Figure 19). It is at the level of this buried fragile zone that the separation must take place. A heat treatment can be performed after bonding to strengthen the bonding and promote the coalescence of microcavities.
- the separator according to the invention is introduced at the bonding interface, in the chamfer zone 10 of the plates close to the fragile zone comprising microcavities 22.
- the separation then takes place for example by rotating the separator along a fracture line 20, which as shown in FIG. 19, is made in the plane comprising the microcavities 22 and starts from the chamfer zone 10 (the fracture line 20 is represented by a dashed line) .
- the device and the separation method according to the invention make it possible, while avoiding the radial introduction of a blade within a stack, to avoid introducing impurities onto the surfaces of the separated plates and / or to scratch these surfaces, while allowing to induce the separation of stacked structures from the periphery of the stack.
- the area of the usable area of the plates thus separated is therefore much larger than that obtained by separation according to the previous devices, which require the radial introduction of a blade.
- the separator may be a body having two walls that meet along a straight edge. It may be for example a blade type cutter blade.
- a fixed-form separator has been used, but it would of course be possible to use a separator whose shape varies over time, so as to dynamically adapt the distance between the points of contact of this separator with the stacking. It could be a conical separator whose angle between the generator and the base can vary dynamically, for example under the effect of pneumatic forces.
- only one separator is used, but it is quite possible to use two or more separators in combination.
- the separators may be of identical shape or not, rotating or not, at variable speeds and directions of rotation.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Centrifugal Separators (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Sheets, Magazines, And Separation Thereof (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Electron Tubes For Measurement (AREA)
- Steering Control In Accordance With Driving Conditions (AREA)
- Load-Engaging Elements For Cranes (AREA)
- Supplying Of Containers To The Packaging Station (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0654138A FR2906933B1 (fr) | 2006-10-06 | 2006-10-06 | Dispositif de separation d'une structure empilee et procede associe |
| PCT/EP2007/060548 WO2008040782A1 (fr) | 2006-10-06 | 2007-10-04 | Dispositif de separation d'une structure empilee et procede associe. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2091708A1 true EP2091708A1 (fr) | 2009-08-26 |
| EP2091708B1 EP2091708B1 (fr) | 2010-04-07 |
Family
ID=37964753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07820925A Not-in-force EP2091708B1 (fr) | 2006-10-06 | 2007-10-04 | Dispositif de separation d'une structure empilee et procede associe. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20120261076A1 (fr) |
| EP (1) | EP2091708B1 (fr) |
| JP (1) | JP2010505651A (fr) |
| AT (1) | ATE463331T1 (fr) |
| DE (1) | DE602007005836D1 (fr) |
| FR (1) | FR2906933B1 (fr) |
| WO (1) | WO2008040782A1 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2925978B1 (fr) * | 2007-12-28 | 2010-01-29 | Commissariat Energie Atomique | Procede et dispositif de separation d'une structure. |
| KR101570917B1 (ko) | 2011-04-11 | 2015-11-20 | 에베 그룹 에. 탈너 게엠베하 | 가요성의 캐리어 마운트 및 캐리어 기판을 분리하기 위한 장치 및 방법 |
| EP2795669B1 (fr) * | 2011-12-22 | 2020-06-17 | EV Group E. Thallner GmbH | Support de substrat flexible, dispositif et procédé permettant de détacher un premier substrat |
| FR2995441B1 (fr) | 2012-09-07 | 2015-11-06 | Soitec Silicon On Insulator | Dispositif de separation de deux substrats |
| FR3008190B1 (fr) | 2013-07-08 | 2015-08-07 | Commissariat Energie Atomique | Procede et dispositif de mesure d'un champ magnetique au moyen d'excitations synchronisees |
| JP6469070B2 (ja) * | 2016-12-21 | 2019-02-13 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 第1の基板を第2の基板から剥離する方法および可撓性の基板保持装置の使用 |
| FR3093715B1 (fr) | 2019-03-15 | 2021-03-05 | Soitec Silicon On Insulator | Dispositif de maintien pour un ensemble à fracturer |
| US20220234160A1 (en) * | 2019-06-04 | 2022-07-28 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11274018A (ja) * | 1998-10-09 | 1999-10-08 | Canon Inc | 複合部材の分離方法および半導体基体の作製方法 |
| JP4311702B2 (ja) * | 1999-12-08 | 2009-08-12 | キヤノン株式会社 | 複合部材の分離方法及び薄膜の製造方法 |
| JP2001177080A (ja) * | 1999-12-15 | 2001-06-29 | Canon Inc | 複合部材の分離方法および貼り合わせ部材の製造方法 |
| FR2823373B1 (fr) * | 2001-04-10 | 2005-02-04 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
| FR2834380B1 (fr) * | 2002-01-03 | 2005-02-18 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
-
2006
- 2006-10-06 FR FR0654138A patent/FR2906933B1/fr not_active Expired - Fee Related
-
2007
- 2007-10-04 US US12/444,062 patent/US20120261076A1/en not_active Abandoned
- 2007-10-04 WO PCT/EP2007/060548 patent/WO2008040782A1/fr not_active Ceased
- 2007-10-04 JP JP2009530888A patent/JP2010505651A/ja active Pending
- 2007-10-04 EP EP07820925A patent/EP2091708B1/fr not_active Not-in-force
- 2007-10-04 AT AT07820925T patent/ATE463331T1/de not_active IP Right Cessation
- 2007-10-04 DE DE602007005836T patent/DE602007005836D1/de active Active
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2008040782A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2091708B1 (fr) | 2010-04-07 |
| FR2906933A1 (fr) | 2008-04-11 |
| WO2008040782A1 (fr) | 2008-04-10 |
| FR2906933B1 (fr) | 2009-02-13 |
| ATE463331T1 (de) | 2010-04-15 |
| US20120261076A1 (en) | 2012-10-18 |
| JP2010505651A (ja) | 2010-02-25 |
| DE602007005836D1 (de) | 2010-05-20 |
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