EP2067190A2 - Radiation-emitting device - Google Patents
Radiation-emitting deviceInfo
- Publication number
- EP2067190A2 EP2067190A2 EP07817510A EP07817510A EP2067190A2 EP 2067190 A2 EP2067190 A2 EP 2067190A2 EP 07817510 A EP07817510 A EP 07817510A EP 07817510 A EP07817510 A EP 07817510A EP 2067190 A2 EP2067190 A2 EP 2067190A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiation
- emitting device
- contact
- electrode surface
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 claims abstract description 77
- 239000002346 layers by function Substances 0.000 claims abstract description 62
- 238000009826 distribution Methods 0.000 claims abstract description 60
- 239000010410 layer Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims description 60
- 230000007423 decrease Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 2
- 230000008901 benefit Effects 0.000 description 17
- 230000003247 decreasing effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Definitions
- the invention relates to a radiation emitting
- Device with at least one functional layer which emits radiation during operation.
- Radiation-emitting devices are suitable as large-area, thin light-emitting elements. However, due to their construction, they have a voltage drop along the lateral direction, which affects the luminance and thus the brightness. The emitted light is thus not homogeneous, but has differences in the local luminance.
- the object of the invention is to provide a radiation-emitting device, which is characterized by an improved, homogenized luminance and thus reduces the above-mentioned disadvantages.
- a radiation-emitting device according to claim 1.
- Particularly advantageous embodiments and further radiation-emitting devices are the subject of further claims.
- a multiplicity of partial regions are introduced into the layer sequence in which the luminance of the radiation is reduced.
- Such a radiation-emitting device preferably comprises a substrate and a layer sequence arranged on the substrate.
- the layer sequence comprises a first electrode surface on the substrate with a first contact for applying a voltage, at least one functional layer which emits radiation during operation, and a second electrode surface on the at least one functional layer.
- a plurality of sub-areas is present, which is modified so that out of them the emission of visible to an external observer radiation is interrupted.
- the distribution density of these subregions varies depending on their distance from the contact.
- the advantage here is that the luminance of the radiation-emitting device varies as a function of the distance from the contacting.
- the modified partial regions are particularly advantageously arranged in the regions of the radiation-emitting device in which, without these partial regions, normally a higher luminance would be present. In this way, the luminance can be reduced in these areas and thus a more uniform distribution of the luminance over the entire luminous area
- a further advantageous feature of a further embodiment of the invention is a radiation-emitting device with partial regions which are not recognizable to the naked eye by an external viewer. Furthermore, the radiation-emitting device can also have partial areas that have microscopic dimensions. As a result, the luminous impression is not disturbed by the external observer, but he perceives only the luminance changed or homogenized by the introduced subregions.
- the invention may have the advantageous feature that the radiation-emitting device has partial regions which reduce the luminance of the emitted radiation. This has the advantage that areas of the functional layer, which would have a high luminance without the partial areas, can be regulated by introducing the partial areas in their average brightness.
- the first contact is present on the side of the first electrode surface.
- the first electrode surface can be supplied with voltage.
- a third contact is provided laterally of the second electrode surface, whereby the second electrode surface can be supplied with voltage.
- the at least one functional layer may conveniently comprise an organic functional layer and preferably also comprise a charge transport layer.
- the material of Functional layer may include polymers and / or Sraall Molecules.
- the radiation-emitting device is an organic, light-emitting diode (OLED), which is particularly well suited as a large-area light-emitting element.
- the at least one functional layer can also be an inorganic functional layer, for example based on phosphide or nitride compound semiconductors.
- the materials are those having the general formula Al n Ga m In n- ra P, where O ⁇ n ⁇ l, O ⁇ m ⁇ l and n + m ⁇ 1 or nitride III / V compound semiconductors, preferably general formula Al n Ga m In; i . - n - m N, where O ⁇ n ⁇ l, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
- the voltage drop of the radiation-emitting device may be due, inter alia, to the conductivity of one or both of the first and second electrode surfaces.
- the first and / or second electrode surface may be a semi-transparent or a transparent electrode surface, which include radiation-emitting functional layers.
- one of the two electrode surfaces may also be a reflective electrode surface.
- the conductivity of the transparent electrode surfaces can be limited by two to three or more orders of magnitude compared to the conductivity of a reflective electrode
- the radiation-emitting device can preferably have a first and / or second electrode surface, which is semitransparent or transparent for the radiation emitted by the functional layer.
- the advantage here is that the generated radiation can be emitted through the first and / or second electrode surface.
- the material of the first and / or second electrode surface comprises metal oxides in a favorable embodiment.
- Transparent conductive oxides are transparent, conductive materials, usually metal oxides, such as zinc oxide, tin oxide,
- binary metal oxygen compounds such as ZnO, SnO 2 or In 2 O 3 also include ternary metal oxygen compounds such as Zn 2 SnO 4 , CdSnO 3 , ZnSnO 3 , MgIn 2 O 4 , GaInO 3 , Zn 2 In 2 O 5 or In 4 Sn 3 Oi 2 or
- TCOs do not necessarily correspond to a stoichiometric composition and may also be p- or n-doped.
- transparent electrodes may include highly conductive organic materials such as PEDOT, or doped organic layers include metals, such as Ag, or combinations of the above options.
- Radiation-emitting device having between the first and the second electrode surface a plurality of insulating and / or non-transparent to the radiation elements in the sub-areas. Their distribution density and / or geometric shape in turn varies depending on the distance of the elements from the first and / or third contact. These elements have the advantage that they can modify the distance from the contacting dependent brightness of the radiation-emitting device. Thus, in this embodiment, the abovementioned partial regions are modified by the insulating and / or non-transparent elements for the radiation in such a way that the coupling out of the radiation from the device is blocked out of them.
- the distribution density of the insulating and / or non-transparent elements decreases with increasing distance from the first and / or third contacting. Furthermore, the insulating and / or non-transparent elements present between the first and second electrode surfaces can prevent emission of radiation from the device in these subregions.
- This has the advantage that the regions of the layer sequence that would have a high luminance without the elements and that are close to the first and / or third contact, a high distribution density of insulating and / or non-transparent elements and the regions which, without the elements, would have a reduced luminance compared to the regions closer to the contacting and which are located farther away from the contacting, have a low distribution density of insulating and / or non-transparent elements.
- the radiation emission is thus reduced more by the elements in the areas of normally high luminance than in areas of normally low luminance.
- the luminance difference across the area is reduced or compensated with a suitable variation of the distribution density.
- the distribution density of the insulating and / or non-transparent elements is chosen so that the difference in the luminance of the radiation emitted by the device between different areas of the device with different distribution densities of the elements is not more than 20%.
- Brightness difference is barely perceptible by an external observer and conveys an improved, more homogeneous luminance.
- the insulating and / or non-transparent elements can furthermore be formed in a line shape and arranged in a periodic structure in the functional layer.
- a periodic structure may include, for example, a grid.
- the grid may have a grid spacing between adjacent line-shaped elements, which increases with increasing distance from the first and / or third contact.
- Such a grid with varying periodicity can be easily and inexpensively in the Install radiation-emitting device without significantly changing the layer sequence of the device. Also, the manufacturing process does not have to be changed over to install such a grid in the device.
- the functional layer can be arranged.
- the layer thickness of the functional layer between adjacent line-shaped elements can continue to decrease with increasing lattice spacing of the elements.
- the functional layer can also be arranged in addition over the linear elements.
- the layer thickness of the functional layer between adjacent line-shaped elements can be controlled, since when the at least one organic functional layer is applied, uncontrolled material transport across the electrode surface is prevented or prevented by the linear insulating and / or non-transparent elements arranged in a grid. is reduced. This may be due to the surface tension of the material of the functional layer between adjacent line-shaped elements.
- the material transport can be further prevented by the fact that the insulating and / or non-transparent elements are not or only slightly wetting for the material of the organic functional layer.
- the material of the functional layer accumulates independently of one another during the application of the material for the functional layer by means of a wet-chemical method, such as spin coating or doctoring, for example, and dries depending on the grid spacing to a specific one layer thickness.
- the layer thickness of the functional layer can decrease with increasing lattice spacing of the insulating and / or non-transparent elements, which is due to the surface tension of the solution of the material for the functional layer.
- the functional layer can thus be formed in a uniform layer thickness.
- the layer thickness of the organic functional layer between adjacent line-shaped elements decreases, since the distance of the adjacent line-shaped elements increases with greater distance from the first and / or third contacting.
- the intensity of the emitted radiation can decrease with increasing layer thickness. This means that with increasing distance from the contacting, the lattice spacing between adjacent line-shaped elements becomes larger, and thus the layer thickness of the functional layer present between the linear elements becomes smaller. In the areas near the contact, in which without the linear elements a stronger intensity of
- the intensity of the emitted radiation can increase with increasing layer thickness.
- the lattice spacing can increase with increasing distance from the decrease first and / or third contact to obtain the emitted radiation unified across the surface.
- the insulating elements comprise electrically insulating elements and, due to their electrically non-conductive properties, interrupt the emission of the radiation in the subregions of the layer sequence in which they are present. This breaks the radiation in the subregions and the radiation loses brightness across the surface.
- the material of the electrically insulating elements may be transparent to the emitted radiation and the size of the insulating elements may advantageously comprise a few micrometers, preferably less than 200 microns, preferably less than 100 microns, more preferably less than 20 microns.
- the advantage here is that the insulating elements, and thus the non-luminous regions of the radiation-emitting device, are generally not resolvable with the naked eye and thus do not disturb the overall image of the luminous area. Due to the varying distribution density, only as many insulating elements are present as necessary, so that only a small area coverage of the first and / or second electrode surface is present through the electrically insulating elements.
- the material of the electrically insulating elements may advantageously be selected from a group comprising photoresists, nitrides, ceramics, oxides and organic insulating compounds.
- the elements in the subregions in the layer sequence are not transparent to the emitted radiation but instead reflect and / or absorb it.
- the emission or generation of radiation in the layer sequence is not interrupted, but only their coupling out of the radiation-emitting device out blocked. The brightness differences in the device are thus modified.
- the material of the non-transparent elements comprises metals.
- the metals of the non-transparent elements are surrounded by an insulating shell, which may be, for example, a polymer shell.
- the elements which are not transparent to the radiation may be electrically conductive printed conductors.
- these conductor tracks extend away from the first and / or third contact via the first and / or second contact
- Electrode area Their distribution density decreases favorably with increasing distance from the first and / or third contact.
- adjacent conductor tracks have different lengths and the length distribution of the conductor tracks, starting from the first and / or third contacting, has at least one maximum and one minimum.
- This embodiment has the advantage that due to the varying distribution density as a function of the distance from the first and / or third contact, the emitted radiation is modified in such a way that the
- Luminance differences which are present without the introduced tracks, can be compensated or reduced. Due to the increasing distance from the first and / or third contacting decreasing distribution density of the conductor tracks, the area coverage of the first and / or second electrode surface is kept as low as possible.
- first and / or third contact can be present on all sides of the first and / or second electrode surface.
- first and / or third electrode surface is enclosed on all sides by the contact.
- the grid spacing increases with increasing distance from the first and / or third contact and may for example be largest in the middle between opposite first and / or second contacts.
- the width of the interconnects is a few millimeters, preferably less than 200 microns, preferably less than 100 microns, more preferably less than 20 microns. This has the advantage that the tracks can not be perceived by an external observer with the naked eye.
- the thickness of the conductor tracks can advantageously have a range of less than 200 ⁇ m, preferably a range of 100 nm to 10 ⁇ m.
- they have the advantage that they can be present on the surface of the first and / or second electrode and also extend through the entire functional layer and can pierce it.
- the conductor tracks surround an insulating layer, for example an insulating layer Polymer layer. As a result, short circuits with the (second) respectively different electrode layer are avoided.
- the first electrode surface may have a second contact for applying a voltage.
- the second electrode surface may have a fourth contact.
- further electrically conductive strip conductors may be present, which extend from the second and / or fourth contacting over the first and / or second electrode surface.
- the distribution density of the conductor tracks, which extend from the second and / or fourth contact via the electrode surface decreases with increasing distance and if the outgoing from the first and second and / or third and fourth contact tracks are not overlap and so do not exceed the brightness minimum. Furthermore, it is advantageous if adjacent conductor tracks have different lengths and the
- the advantage here is that the interconnects again have a varying, decreasing distribution density, which depends on the distance to the first and second and / or third and fourth contacts.
- the maxima and minima of the length distribution may be opposite to the printed conductors emanating from the first and second and / or third and fourth contacting.
- the maxima and minima of the length distribution of the outgoing from the first and second and / or third and fourth contact strip conductors are arranged offset from each other.
- the advantage of mutually shifted maxima and minima is that the brightness modification is symmetrized.
- Another advantageous feature of a further embodiment of the invention are printed conductors, which have branches. It is advantageous if with increasing distance from the contact increasingly more branches are arranged.
- the conductor tracks may, for example, run parallel to the lateral current density.
- the thickness and / or width of the conductor tracks decreases with increasing distance from the contact.
- This embodiment represents a quasi-fractal distribution of the interconnects.
- the advantage of this embodiment is that less the brightness is blocked, but rather the conductivity of the first and / or second electrode surface is increased by the attachment of the interconnects according to the invention. Thus, the brightness is increased in areas of low luminance due to the increased conductivity of the first and / or second electrode surface by the conductor tracks.
- a further advantageous feature of a further embodiment is a radiation-emitting device in which the first and / or second electrode surface has structurings of the electrode material in the partial regions of the layer sequence.
- the distribution density of these structures decreases with increasing distance from the first contact.
- Such modifications may also include portions of the electrode that are free of electrode material, that is, have holes in the electrode. The advantage of this embodiment is that the luminance is modified by modifying the conductivity of the electrodes.
- a further advantageous feature of a further embodiment is a radiation-emitting device in which the at least one functional layer in the partial regions has a conductivity reduced by lack of doping or an increased injection barrier for charge carriers.
- the distribution density of the subregions decreases with increasing distance from the contacting.
- the advantage of this embodiment is the modification of the luminance by the lack of doping, which depends on the distance from the contacting.
- the invention further relates to a method for
- the method steps include arranging a layer sequence on a substrate, wherein a multiplicity of subregions are introduced in the layer sequence.
- Subareas are modified in such a way that the emission of the radiation visible to an external observer is interrupted out of them.
- the subareas will be like this generates that their distribution density varies depending on their distance from the contact.
- a plurality of insulating and / or non-transparent to the radiation elements in the sub-areas can be introduced with a Aufdampfmaske.
- the advantage here is that the subregions are introduced into the layer sequence in one process step.
- the first and / or second electrode surface in the partial regions can be structured and / or the functional layer in the partial regions can not be doped.
- Figure 1 shows the structure of a radiation-emitting device with a plurality of sub-areas in
- FIG. 2 shows an experimental and a simulated distribution of the luminance distribution in conventional large area OLEDs.
- Figure 3 shows a brightness-voltage characteristic connected to a diode characteristic of a conventional light-emitting diode.
- FIG. 4 shows the current density of a conventional OLED
- FIG. 5 shows the luminance in cross section over a conventional OLED.
- FIG. 6 shows a plan view of an exemplary embodiment of a first electrode surface with a first contact and with insulating elements.
- FIG. 7 shows a plan view of the first electrode surface with a first and a second contact and with insulating elements, as well as the luminance distribution and element density.
- Figure 8 shows the structure of another embodiment of the radiation-emitting device according to the invention with a plurality of sub-regions in cross-section.
- FIG. 9 shows a plan view of the first electrode surface with a first and a second contacting arranged on the conductor tracks together with the luminance distribution and surface coverage.
- FIG. 10 shows a plan view of a further exemplary embodiment of the first electrode surface with applied conductor tracks.
- FIG. 11 shows a plan view of a first electrode surface with branched conductor tracks.
- FIG. 12 shows a plan view of the first electrode surface with a first contact and with insulating or non-transparent elements which are formed in a line-shaped manner.
- FIG. 13 shows a schematic cross section to FIG. 12, with the layer thickness between the line-shaped elements.
- Radiation-emitting device On the substrate 100 there is a first electrode surface 200 with a first 210 and a second contact 220.
- a functional layer 300 On the substrate, a functional layer 300 is arranged, which has insulating elements 310, which have a decreasing distribution density D with increasing distance from the contact. The direction in which the distribution density D decreases is indicated in FIG. 1 by an arrow.
- a second electrode surface 400 is arranged on the functional layer 300.
- the layer sequence of first electrode surface 200, functional layer 300 and second electrode surface 400 has a plurality of partial regions 330, which can extend through the entire layer sequence or the second
- A indicates the sectional area on which the supervision takes place in FIG.
- FIG. 2 shows an experimental and simulated measurement of the luminance of a conventional OLED.
- the side of the electrode surface for contacting x is plotted against the exposed side y.
- the luminance R is high in the bright areas and low in the dark areas. Since an OLED with two opposite contacts was measured in the experiment, there is a luminance minimum in the middle range between the contacts. A very similar result comes with a Achieved simulation, which is shown in the diagram S.
- the side of the electrode surface for contacting x is plotted against the exposed side y and the luminance R is indicated across the surface.
- the luminance is also in the range of the largest here
- Figure 3 shows the luminance differences in conventional diodes in the form of a brightness-voltage characteristic connected to a diode characteristic.
- the voltage V is plotted on the x-axis, the current density C d on the left y-axis and the luminance R on the right-hand y-axis.
- both the current density and the luminance are low. Both curves increase steeply with increasing voltage. This means that both the current density and the luminance with increasing
- the lateral current density Ca in the electrodes is shown by the area of a conventional OLED surface stretched from the side surface for contacting x and the exposed side surface y.
- the voltage is high and thus the current density is high (long arrows).
- the current density also decreases (short arrows). This creates over the OLED surface a luminance inhomogeneity with a minimum luminance.
- FIG. 1 A further illustration of the luminance inhomogeneity of a conventional OLED is shown in FIG.
- the diagram represents the luminance distribution along a cross-section of an OLED along the exposed side surface y from the first to the second contact.
- the luminance R is applied to the left y-axis. It is high at the lateral edges, ie near the contacts towards the middle. This is evidenced by an experiment E (solid line) and a simulation S (points), both of which give well consistent results.
- Embodiment shown An electrode surface 200 with insulating elements 310 and a first lateral contact 210 is shown in plan view along the exposed surface. Underneath is the substrate 100. The lateral contacting is connected to the second electrode surface 400 via connections 500 and an electrical conductor 510. For the sake of clarity, the functional layer 300 is not shown, the second electrode surface 400 only indicated.
- the distribution density D of the insulating elements decreases with increasing distance from the contacting. This direction of distribution density D, in which it decreases, is shown by an arrow.
- these insulating elements are so small that they are no longer resolvable for an external observer. That is why they are smaller than 200 ⁇ m, preferably smaller than 20 ⁇ m.
- the insulating elements are electrically insulating elements and put in the subregions 330 in which they are located in these Ranges without the elements normally present luminance R of the emitted radiation, that is, they prevent the emission of radiation from the radiation-emitting device out in the areas in which they are located. This is done by interrupting the radiation through the insulating elements that block the radiation due to its non-conductive property.
- the variation of the distribution density of the insulating elements is chosen such that the difference in the luminance at the different distances from the contacting on the surface of the functional layer is less than 20%.
- the insulating elements are favorably transparent to the emitted radiation and may consist of photoresists, nitrides, ceramics and oxides.
- the insulating elements are electrically insulating elements. Also possible are electrically insulating encased metals.
- FIG. 7 shows a variation of the embodiment shown in FIG. The plan view is to be understood along the surface A of FIG.
- a second contacting 220 is arranged opposite the first contacting 210, wherein both contacts are connected via electrical conductors 500 and electrical connections 510 to the second electrode surface 400.
- Underneath is the substrate 100.
- On the electrode surface 200 are again electrically insulating elements 310.
- the functional layer 300 is not shown for clarity, the second electrode surface only hinted way. Since their distribution density D, as shown by an arrow, decreases with increasing distance from the contacts, their concentration in the middle of the surface is the lowest.
- the element density D is also high, in low-luminance regions, the element density is low.
- the resulting luminance R 2 with the elements is thus approximately independent of the distance from the contacts (upper and lower axis).
- Figure 8 shows the general structure of a
- Radiation-emitting device On the substrate 100 is a first electrode surface 200 with a first 210 and second contact 220. On the substrate, a functional layer 300 is arranged, the electrically conductive
- Conductor tracks 320 which have a decreasing with increasing distance from the contact distribution density D. The direction in which the distribution density decreases is shown with an arrow. Finally, a second electrode surface 400 with a third 410 and fourth contact 420 is arranged on the functional layer 300. Here, too, conductor tracks 320 are present whose distribution density D increases with increasing distance from the
- the layer sequence comprising first electrode surface 200, functional layer 300 and second electrode surface 400 has a plurality of partial regions 330 which extend through the entire layer sequence and interrupt the emitted radiation.
- A indicates the sectional area, the top view of which is shown in the following figures. In the following figures, only the first electrode surface 200 is discussed, but the same applies to the second electrode surface 400, in the case that the second electrode surface 400 is also a semi-transparent or transparent electrode surface.
- FIG. 9 shows a further embodiment of the device according to the invention.
- the top view along the surface A from FIG. 8 onto the first electrode surface 200 arranged on the substrate 100 is shown, with a first 210 and second contacting 220, which lies opposite the first one.
- the two contacts are connected to the second electrode surface 400 via electrical conductors 500 and electrical connections 510.
- On the electrode surface conductor tracks 320 are arranged. These may also be present on the second electrode surface 400, but the following description relates only to the first electrode surface 200.
- the conductor paths each extend away from the contacts over the first electrode surface. In this case, adjacent tracks have different lengths and the length distribution of Conductor tracks has maxima and minima starting from the contacts.
- the interconnects have a distribution density D, which decreases laterally with increasing distance from the contacts, which is represented by the arrow.
- the longest or shortest tracks lie exactly opposite each other, but do not touch.
- the area with the lowest luminance is free of traces.
- the width of the tracks is favorably less than 200 microns, preferably less than 20 microns, so that the tracks are no longer perceptible to an external observer.
- Conductor tracks may be in a range of less than 200 .mu.m, preferably in a range of 100 nm to 10 .mu.m, that is, the conductor tracks may lie only on the surface of the electrode surface, or extend into the functional layer 300 lying on the electrode surface. In a further embodiment, these can also pierce the second electrode surface. In this case, the individual interconnects are surrounded by an insulating layer.
- a diagram is again shown in which the relationship between luminance R and surface coverage SC in cross section along the exposed side surface y is shown. The solid lines represent the ideal curves, the dashed ones the real ones. In areas where there is a large luminance R 1 without the traces, the surface coverage is high, in areas of low luminance R 1 , the surface area is low.
- FIG. 9 An alternative embodiment to the example shown in FIG. 9 is shown in FIG.
- the maxima and minima of the length distribution of the interconnects 330 on the electrode surface 200 are not opposite, but shifted from each other.
- the distribution density D which decreases in the direction of the arrow, although in the farthest range of the contacts 210 and 220 is higher than in the
- Example of Figure 8 but the luminance distribution is better symmetrized.
- the relationship between the luminance R 1 shown in the diagram next to the plan view of the electrode surface, which is present without the conductor tracks, the surface coverage SC and the resulting luminance R 2 is approximately equal to that shown in FIG.
- This example of the arrangement of printed conductors can also apply to the first and second electrode surfaces.
- FIG. 12 shows, analogously to FIGS. 7 and 9, a variation of an exemplary embodiment.
- the plan view is to be understood along the surface A of FIG. 1 and FIG. 8.
- the first contact 210 on all sides of the
- Electrode surface 200 wherein it is connected via an electrical conductor 510 and electrical connections 500 to the second electrode surface 400. Underneath is the substrate 100. On the electrode surface 200 are electrically insulating or non-transparent, linear elements 350, which are arranged in the form of a periodic structure, a grid. The grid has a grid spacing 315 between adjacent line-shaped elements, which increases with increasing distance from the contact 210 and is greatest in the middle between the sides of the electrode area where the contact is located.
- the functional layer 300 is not shown for the sake of clarity, the second electrode surface 400 only hinted.
- the insulating line-shaped elements 350 in many sub-regions 330 interrupt the electrical contact between them
- Electrode surfaces and the functional layers and prevent so that radiation is emitted from these areas, while in areas at a greater distance from the contact, which would have a lower intensity of the emitted radiation without the electrically insulating, linear elements, the small extent interrupt emitted radiation, since the grid spacing 315 is larger there.
- the width of the electrically insulating, line-shaped elements is less than 200 microns, preferably less than 20 microns, their thickness may be in a range of less than 200 microns, preferably in a range of 100 nm to 10 microns. Thus, they are no longer perceptible to an outside observer.
- the line-shaped elements 350 are non-transparent electrically conductive printed conductors, these can also be present on the second electrode surface 400, but the following description applies only to the first electrode surface 200.
- the region with the least intensity of emitted radiation is large Grid spacing covered to each other, while near the contact the grid is denser. The result is that in the area near the contact, where would exist without the electrical traces a high luminance, there is a larger area coverage with traces.
- the width of the conductor tracks is less than 200 .mu.m, preferably less than 20 microns, so that the tracks are no longer perceptible to an external observer.
- Thickness of the conductor tracks may be in a range of less than 200 .mu.m, preferably in a range of 100 nm to 10 .mu.m, which means that the conductor tracks may lie only on the surface of the electrode surface or extend into the functional layer 300 lying on the electrode surface. In a further embodiment, these can also pierce the second electrode surface. In this case, the individual interconnects are surrounded by an insulating layer, for example a polymer layer.
- the layer thickness of the functional layer 300 present between the line-shaped elements 350 also varies such that the layer thickness increases with increasing Grid spacing 315 decreases.
- Figure 13 a schematic cross section along the axis B indicated in Figure 12 is shown.
- the substrate 100 with the first electrode surface 200 and the first contact 210 can be seen. This can be the
- Electrode surface 200 from all sides, which is not shown in the perspective shown in Figure 13.
- the linear elements 350 On the first electrode surface are the linear elements 350, which are arranged in the form of a grid, wherein in FIG.
- the line-shaped elements have a grid spacing 315 which increases with increasing distance from the contact 210 and has a maximum approximately in the middle of the electrode area. Between the linear elements 350 is the
- Functional layer 300 which has a decreasing layer thickness d with increasing lattice spacing.
- the second electrode surface, the third contact and the electrical connections are not shown in FIG. 13 for reasons of clarity.
- the linear elements can be non-transparent conductor tracks, conductor tracks with an insulating layer but also include electrically insulating materials, for example a photoresist.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006046234 | 2006-09-29 | ||
DE102006055884.7A DE102006055884B4 (en) | 2006-09-29 | 2006-11-27 | Radiation-emitting device and method for its manufacture |
PCT/DE2007/001637 WO2008040288A2 (en) | 2006-09-29 | 2007-09-11 | Radiation-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2067190A2 true EP2067190A2 (en) | 2009-06-10 |
Family
ID=38962611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07817510A Withdrawn EP2067190A2 (en) | 2006-09-29 | 2007-09-11 | Radiation-emitting device |
Country Status (8)
Country | Link |
---|---|
US (2) | US8159129B2 (en) |
EP (1) | EP2067190A2 (en) |
JP (1) | JP5424882B2 (en) |
KR (1) | KR101424305B1 (en) |
CN (1) | CN101553941B (en) |
DE (1) | DE102006055884B4 (en) |
TW (1) | TWI354389B (en) |
WO (1) | WO2008040288A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009106063A1 (en) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Monolithic, optoelectronic semi-conductor body and method for the production thereof |
DE102008011848A1 (en) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body and method for producing such |
DE102008054218A1 (en) | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | LED chip |
EP2244316A1 (en) * | 2009-04-22 | 2010-10-27 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | An electronic device and a method of manufacturing the same |
DE102010003121A1 (en) | 2010-03-22 | 2011-09-22 | Osram Opto Semiconductors Gmbh | Organic light-emitting device with homogeneous luminance distribution |
DE102014102255B4 (en) * | 2014-02-21 | 2021-10-28 | Pictiva Displays International Limited | Organic light-emitting component and method for producing an organic light-emitting component |
DE102014110969A1 (en) | 2014-08-01 | 2016-02-04 | Osram Oled Gmbh | Organic component and method for producing an organic component |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1484632A1 (en) * | 2003-06-06 | 2004-12-08 | Kabushiki Kaisha Toyota Jidoshokki | Planar luminescent illumination device including auxiliary electrode |
EP1684550A1 (en) * | 2003-10-02 | 2006-07-26 | Kabushiki Kaisha Toyota Jidoshokki | Electric field light emitting element |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS612296A (en) * | 1984-06-15 | 1986-01-08 | アルプス電気株式会社 | Transparent electrode |
US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
JP2828187B2 (en) * | 1993-04-08 | 1998-11-25 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device |
JPH07111339A (en) * | 1993-10-12 | 1995-04-25 | Sumitomo Electric Ind Ltd | Surface emission type semiconductor light emitting device |
JPH1140362A (en) | 1997-07-15 | 1999-02-12 | Casio Comput Co Ltd | Electroluminescent element and its manufacture |
GB9718393D0 (en) * | 1997-08-29 | 1997-11-05 | Cambridge Display Tech Ltd | Electroluminescent Device |
JP2000231985A (en) * | 1999-02-12 | 2000-08-22 | Denso Corp | Organic electroluminescence element |
TW425726B (en) * | 1999-10-08 | 2001-03-11 | Epistar Corp | A high-luminance light emitting diode with distributed contact layer |
US6512248B1 (en) * | 1999-10-19 | 2003-01-28 | Showa Denko K.K. | Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp |
US6656611B2 (en) * | 2001-07-20 | 2003-12-02 | Osram Opto Semiconductors Gmbh | Structure-defining material for OLEDs |
DE10147887C2 (en) * | 2001-09-28 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component with a contact, which comprises a plurality of spaced-apart contact points |
JP2003308968A (en) * | 2002-04-12 | 2003-10-31 | Rohm Co Ltd | Electroluminescent element and method of manufacturing the same |
GB0218202D0 (en) * | 2002-08-06 | 2002-09-11 | Avecia Ltd | Organic light emitting diodes |
KR20060064987A (en) * | 2004-12-09 | 2006-06-14 | 한국전자통신연구원 | Conducting ink and organic semiconductor transistor and fabrication method using the same |
JP4561490B2 (en) * | 2004-12-24 | 2010-10-13 | 株式会社豊田自動織機 | Electroluminescence element |
US20070075636A1 (en) * | 2005-09-30 | 2007-04-05 | Fuji Photo Film Co., Ltd. | Organic electroluminescent element |
US7498735B2 (en) * | 2005-10-18 | 2009-03-03 | Eastman Kodak Company | OLED device having improved power distribution |
DE102006013408A1 (en) | 2006-03-17 | 2007-09-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Light emitting diode unit for use as signal unit, has electrical conductors led along outer surface of electrically conducting electrodes based on electrical contact, overlapping electrodes in area wise, and forming power supply line |
US7928537B2 (en) * | 2006-03-31 | 2011-04-19 | Fujifilm Corporation | Organic electroluminescent device |
TWI331483B (en) * | 2006-08-07 | 2010-10-01 | Ritdisplay Corp | Organic light emitting device with heat dissipation structure |
-
2006
- 2006-11-27 DE DE102006055884.7A patent/DE102006055884B4/en active Active
-
2007
- 2007-09-11 CN CN200780043888.5A patent/CN101553941B/en active Active
- 2007-09-11 EP EP07817510A patent/EP2067190A2/en not_active Withdrawn
- 2007-09-11 WO PCT/DE2007/001637 patent/WO2008040288A2/en active Application Filing
- 2007-09-11 US US12/443,324 patent/US8159129B2/en active Active
- 2007-09-11 JP JP2009529519A patent/JP5424882B2/en active Active
- 2007-09-11 KR KR1020097008354A patent/KR101424305B1/en active IP Right Grant
- 2007-09-19 TW TW096134771A patent/TWI354389B/en not_active IP Right Cessation
-
2012
- 2012-03-20 US US13/425,164 patent/US8749134B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1484632A1 (en) * | 2003-06-06 | 2004-12-08 | Kabushiki Kaisha Toyota Jidoshokki | Planar luminescent illumination device including auxiliary electrode |
EP1684550A1 (en) * | 2003-10-02 | 2006-07-26 | Kabushiki Kaisha Toyota Jidoshokki | Electric field light emitting element |
Also Published As
Publication number | Publication date |
---|---|
WO2008040288A3 (en) | 2008-07-24 |
CN101553941A (en) | 2009-10-07 |
DE102006055884A1 (en) | 2008-04-03 |
TWI354389B (en) | 2011-12-11 |
CN101553941B (en) | 2012-06-20 |
KR101424305B1 (en) | 2014-08-01 |
WO2008040288A2 (en) | 2008-04-10 |
DE102006055884B4 (en) | 2023-03-16 |
US20120176027A1 (en) | 2012-07-12 |
JP2010505248A (en) | 2010-02-18 |
JP5424882B2 (en) | 2014-02-26 |
US20100007269A1 (en) | 2010-01-14 |
US8159129B2 (en) | 2012-04-17 |
TW200816539A (en) | 2008-04-01 |
US8749134B2 (en) | 2014-06-10 |
KR20090057460A (en) | 2009-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2272116B1 (en) | Light-emitting organic component and arrangement having a plurality of light-emitting organic components | |
DE102006055884B4 (en) | Radiation-emitting device and method for its manufacture | |
DE102010032834B4 (en) | Optoelectronic device and method for its manufacture | |
DE102016112586B4 (en) | Display device, manufacturing process and display device | |
DE102006052029A1 (en) | Light emitting device i.e. large area organic LED, has set of conductor strips that are in contact with electrode surface, and other set of strips controlled with temporary and/or local and variable and/or different high electric current | |
EP2499671B1 (en) | Organic light-emitting device having homogenous brightness distribution | |
EP2248202A1 (en) | Organic light-emitting diode, contact arrangement and method for producing an organic light-emitting diode | |
WO2005106987A1 (en) | Layer arrangement for an organic light-emitting diode | |
EP2347455A2 (en) | Radiation-emitting component and method for producing the same | |
WO2013053508A1 (en) | Organic light‑emitting diode | |
DE102014108373A1 (en) | Optoelectronic semiconductor chip | |
DE102013107529A1 (en) | Method for operating an organic light-emitting component | |
DE102008049057A1 (en) | Organic opto-electrical component and a method for producing an organic opto-electrical component | |
DE102008049056A1 (en) | Organic photoelectric device and a method for producing an organic photoelectric device | |
DE102021200044A1 (en) | LEAD CARRIER, OPTOELECTRONIC DEVICE AND METHOD FOR MAKING A LEAD CARRIER | |
EP2453498B1 (en) | Radiation emitting device and method for manufacturing a radiation emitting device | |
WO2015032901A2 (en) | Radiation-emitting device and method for producing same | |
WO2020088877A1 (en) | Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip | |
DE102007001742A1 (en) | Optoelectronic device and method for producing an optoelectronic device | |
WO2016078882A1 (en) | Optoelectronic device with a fuse | |
DE102014112204A1 (en) | Optoelectronic device | |
WO2016146695A1 (en) | Method for producing a substrate for a light-emitting component and organic optoelectronic component | |
DE102014103751A1 (en) | Organic radiation-emitting component | |
WO2017036800A1 (en) | Organic light-emitting diode and vehicle exterior lighting | |
DE102015101512A1 (en) | Organic electronic component |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20090326 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK RS |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BEH, SOK GEK Inventor name: MILLARD, IAN STEPHEN Inventor name: SCHINDLER, FLORIAN Inventor name: KLEIN, MARKUS |
|
DAX | Request for extension of the european patent (deleted) | ||
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB |
|
17Q | First examination report despatched |
Effective date: 20130724 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: OSRAM OLED GMBH |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 51/52 20060101AFI20191031BHEP Ipc: H01L 33/08 20100101ALN20191031BHEP |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: OSRAM OLED GMBH |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Free format text: PREVIOUS MAIN CLASS: H01L0051520000 Ipc: H10K0050814000 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H10K 50/814 20230101AFI20230509BHEP |
|
INTG | Intention to grant announced |
Effective date: 20230525 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20231005 |