EP2063981A1

EP2063981A1 - Microscreen for filtering particles in microfluidics applications and production thereof

Info

Publication number: EP2063981A1
Application number: EP07787543A
Authority: EP
Inventors: Ando Feyh
Original assignee: Robert Bosch GmbH
Current assignee: Robert Bosch GmbH
Priority date: 2006-09-04
Filing date: 2007-07-13
Publication date: 2009-06-03
Also published as: US20100296986A1; DE102006041396A1; WO2008028717A1

Abstract

A microscreen (1) is proposed for filtering particles in microfluidics applications, and a production process thereof. The microscreen (1) comprises an Si substrate (3) which has been p-doped at least in some regions and has a cutout, a macroporous membrane (15) connected to the Si substrate (3) via n-doped regions (5a, 5b), wherein the cutout of the Si substrate (3) is arranged directly below the membrane (15) to form a cavity (20).

Description

description

title

Microsieve for filtering particles in microfluidic applications and its production

State of the art

For microfluidic applications many microstructured components have already been proposed. In addition to micropumps and microvalves, microsieves for filtering particles have also been described. For example, from US

2005/0092676 Al a microfilter known, which consists of a separation layer and a supporting support layer. Both layers may be porous, wherein an inorganic material such as silicon or organic material such as polymer is proposed for the filter membrane. While the actual separation layer is applied as a filter membrane on the upper side of the carrier layer, the back side of the

Carrier layer open.

Such filters, which are open at the bottom, can not readily be integrated into corresponding microfluidic systems, such as the "lab-on-chip" approach.

On the other hand, membranes of porous silicon are known with a cavern arranged underneath, which are provided for sensory components. From DE 100 46 622 Al, for example, a membrane sensor unit with a carrier is known, in which the thermocouples are arranged on a silicon membrane. The membrane has nano- or mesoporous areas. Furthermore, an insulation trough for thermal insulation is provided underneath the membrane, wherein the insulation trough can also be designed as a cavern.

It is also known to realize buried under a nano- or mesoporous membrane microchannels. So their production is characterized by a two-stage electrochemical process, for example in the work "Planar CMOS Compatible Process for the Fabrication of Buried Microchannels in Silicon, Using Porous-Silicon Technology", G. Kaltsas et al., J. MEMS, Vol. 12, No. 6, 2003, 863- 872. The individual processes "formation of porous silicon" and "electropolishing" were carried out successively, and the pore diameters in the membrane were in the range of a few nm.

Similarly, in the work "Multi-walled Microchannels: Free-Standing Porous Silicon Membranes for Use in μTAS", R. Tjerkstra et al., J. MEMS, Vol. 9, No. 4, 2000, 495-501, microchannels have been disclosed According to the work mentioned, the pore diameters in the membrane were at most 14 nm in size.

However, such previously described nano- or mesoporous membranes are not or only partially suitable as mechanical particle filters in microfluidic systems. Nanopores are generally understood to mean pores with average pore diameters of 2-5 nm. Mesopores, however, have average pore diameters of up to 50 nm. Pores with average pore diameters greater than 50 nm are referred to as macropores. These designations also apply in this present document.

Previously known nano- or mesoporous membranes with small pore diameters of typically below 2-5 or 14 nm are prone to clogging or damage. However, a simple electropolishing under a macroporous Si layer to form a cavity under a macroporous membrane is not readily possible: in the case of nano- or mesoporous silicon, the electrical resistance of the Si structure (skeletal structure) of the porous structure is relatively high that this structure is not attacked during a subsequent electropolishing step. The membrane is therefore retained. On the other hand, in the case of macroporous silicon, the electrical resistance is lower. This can lead to an attack of the porous Si structure during the electropolishing, and the actual membrane is destroyed. The mechanical stability is therefore not guaranteed.

It is an object of the present invention to provide a microfilter and its production method which is suitable for applications in microfluidics, in particular for integration into microfluidic systems. This object is solved by the features of the independent claims. Obviously the invention

The subject matter with the features of the independent claims has the advantage over microfilters known hitherto that it has features optimized for applications in microfluidics, such as relatively large pore diameters greater than 50 nm, preferably in the μm range, in particular 1-5 μm, in a membrane having. Thus, the macroporous membrane with a cavity located therebelow can be used as an upstream particulate filter in sensitive fluidic systems.

Advantageous developments of the invention will become apparent from other pending

Claims and from the description.

drawing

Embodiments of the invention are illustrated in the drawings and are explained in more detail below. Show it:

Figures Ia and Ib a first embodiment of a manufacturing method of a microsieve, and

Figures 2a and 2b show a further embodiment of a manufacturing method of a microsieve in the side view.

For the production of a micro sieve for filtering particles in microfluidic applications, a method is proposed by means of a two-stage etching process with a first and a second etching process: a) provision of an at least partially p-doped Si substrate, b) at least partial formation of a layer of n-doped regions on the Si substrate, c) producing a macroporous layer on the Si substrate by a first

Etching process, and d) transferring the macroporous layer through a second, different from the first, etching process into a cantilevered membrane by creating a cavity under the macroporous layer, the second etching process being electropolishing. - A -

The basic method will now be explained with a first embodiment and Fig. Ia and Ib. First, according to step a), an at least partially p-doped Si substrate 3 is provided. The substrate material preferably has a resistivity of p> 1 Ω cm.

In a next step b), a layer 5 of n-doped regions 5 a, 5 b is formed in regions on the Si substrate 3. In this case, the layer 5 is a mask, more precisely an n-depth mask, and is arranged around the later membrane area. One possibility for forming the n-doped regions 5a, 5b is an implantation process. The implantation zone achieved thereby is inert in the further process steps and serves to suspend the later membrane.

Furthermore, in a step c), a macroporous layer 10 is produced on the Si substrate 3 by a first etching process, the electrochemical etching in a hydrofluoric acid-containing (HF) electrolyte being provided here as the first etching process.

As can be seen from FIG. 1, the macroporous layer 10 is produced in a region not protected by the mask, the later filter region 6. The final thickness of the macroporous layer 10 is not yet reached in Fig. 1a, i. the figure in Fig. Ia is a snapshot during the first etching process.

Preferably, before the actual production of the macroporous layer 10 by etching methods such as wet chemical etching in potassium hydroxide (KOH) or reactive ion etching (RIE) Ätzkeime, in particular small depressions, provided for pre-structuring of the macropores to be generated. The etch germs as Nukleationskeime support that the pores the desired orientation and

Occupy packing density. This pre-structuring can also influence the later filter degree, ie the average pore diameter. In addition, the average pore diameter - as well as the later average wall thickness - depending on the choice or strength of Substratdotierung be adjusted.

The macroporous layer 10 itself is then, as already mentioned above, produced by electrochemical etching in a hydrofluoric acid (HF) electrolyte. Preferably, an organic solvent is used as the wetting agent. This organic additive allows the adjustment of the HF concentration as well as a targeted influencing of the formation of the macropores in p-doped silicon substrate 3. Suitable solvents are, for example, dimethylformamide (DMF), dimethyl sulfoxide (DMSO) or acetonitrile (MeCN). The formation of the macropores takes place on the previously provided nucleation nuclei. Incidentally, an HF concentration in the range of 1 to 20% m (weight percent) is preferably used.

The final thickness of the macroporous layer 10, which is converted into a self-supporting membrane 15 in a step d), is preferably in the range between 10 and 50 μm. The transfer of the macroporous layer 10 into a cantilevered membrane 15 is achieved by creating a cavity 20 under the layer 10. It is the

Cavity 20 by a further electrochemical etching step, namely generated by an electropolishing. This etching step can advantageously be carried out in the same etching medium as for the production of the macroporous layer 10 by a specific increase in the electrical current density. Alternatively, it is also possible to carry out the electropolishing in a specially adapted to the electropolishing etching medium. For this purpose, mixtures of highly concentrated HF, alcohol and H ₂ O are available, preferably with an HF concentration of 20% m or greater. As a result, etching rates of over 200 nm / s are achieved. By means of the etching time, the depth of the cavity 20, ie the cavern depth, can be adjusted within wide ranges. Thus cavities 20 or caverns with a depth of a few microns to over 100 microns are possible.

Since the etching by means of electropolishing is an isotropic process, it must be prevented by a suitable measure that the membrane 15 is simply dissolved out of the substrate 3 in this etching step. One such suitable measure is the inert n-doped mask as formed in step b).

With the aid of Fig. 2a and 2b, a further embodiment will be explained. Starting from step a) already explained above, a layer 5 of n-doped regions 5a, 5b is again formed on the Si substrate 3 in step b), wherein now first in the

Contrary to the first embodiment, the n-doped regions 5a, 5b are applied over the entire surface of the Si substrate 3. This intermediate state is not shown in the figures. In order to convert the substrate 3 into the state shown in FIG. 2 a, ie to produce a macroporous layer 10 in regions in the uppermost layer plane by a first etching process in a step c), a dry layer is formed Etching method used. In this case, trench openings are defined by means of an additional mask not shown in the figures, typically resist mask. Trench structures that run the entire thickness of the layer 10 are realized via the trench openings. In this trench process, the openings are etched at least until they reach into the substrate 3. These openings, which in this document are also understood as pores and are essential for the subsequent filter function, are defined solely by the trench structuring. With this approach, any torture geometries are possible because the trimmed n-doped filter region 6 is not attacked in the now to be carried out electropolishing. The geometric configuration of the openings, such as the width of the openings or their distribution in the macroporous layer 10, so it can be controlled controlled. This procedure is particularly suitable for the production of a very thin sieve.

Subsequently, as is known from the first exemplary embodiment, in a step d) a cavity 20 is generated under the macroporous layer 10 by means of electropolishing.

In all embodiments, it is useful and possible depending on requirements, in addition to the steps a) to d) to provide the membrane 15 after its production with a functional layer, not shown in the figures. Further, the membrane 15 can be hydrophilized by a slight oxidation. As a functional layer, a reactive layer or a layer with catalytic properties can also be used. The sieve then serves - in addition to the filter function - as a microreactor. The functional layer can for this example consist of platinum, palladium or nanocrystalline iron.

In the case of the use of nanocrystalline iron as a functional layer, there are interesting applications in the field of neutralization of environmental toxins. Such nanoparticles have been reported to neutralize heavy metals, dioxin, PCBs and a variety of other toxicants. As a result, such in the input area of a lab-on-chip system

Poisons are neutralized as well as any resulting during the analysis toxic reaction products. It is stated that the method described produces a microsieve 1 for use in microfluidics, the finished microsieve 1 comprising: an at least partially p-doped Si substrate 3 with a cutout, a macroporous, n-doped regions 5a, 5b connected to the Si substrate 3 membrane 15, wherein the recess of the Si substrate 3 is arranged to form a cavity 20 directly under the membrane 15.

The macroporous membrane 15 preferably has pores or openings with a

Diameter of 1 to 5 microns. In a particular embodiment, the macroporous membrane 15 may have trench structures extending across the entire thickness of the membrane 15. It is also possible that the membrane 15 is provided with a functional layer, in particular a reactive layer and / or a catalytically active layer. As a material of the functional layer, for example, platinum, palladium or nanocrystalline iron is suitable.

The manufacture of the microsieve 1 comprises a two-stage etching process, wherein the first etching process is not an electropolishing and creates a macroporous layer 10 on the Si substrate 3, while the second etching process is an electropolishing and a

Recess under the macroporous layer 10 forms.

The microsieve 1 described above makes it possible to use it in microfluidic systems, such as in lab-on-chip systems, in particular if samples are to be examined directly and without prior processing. Such is the use of the

Microsieve 1 suitable for samples especially from (bio) chemical, medical or clinical areas.

Claims

claims

1. microsieve (1) for filtering particles in microfluidic applications, comprising an at least partially p-doped Si substrate (3) with a recess, - a macroporous, over n-doped regions (5a, 5b) with the Si Substrate (3) connected membrane (15), wherein the recess of the Si substrate (3) for forming a cavity (20) directly under the membrane (15) is arranged.

2. microsieve according to claim 1, characterized in that the macroporous membrane

(15) has pores with a diameter of 1 to 5 microns.

3. Mirkosieb according to claim 1, characterized in that the macroporous membrane (15) has trench structures which extend over the entire thickness of the membrane (15).

4. Microsieve according to one of claims 1 to 3, characterized in that the membrane (15) is provided with a functional layer, in particular a reactive layer and / or a catalytically active layer.

5. microsieve according to claim 4, characterized in that the functional layer consists of platinum, palladium or nanocrystalline iron.

6. A method for producing a microsieve (1) for use in microfluidics by means of a two-stage etching process with a first and a second

Etching process: a) providing an at least partially p-doped Si substrate (3), b) at least partially forming a layer (5) of n-doped regions (5a, 5b) on the Si substrate (3), c) producing a macroporous layer (10) on the Si substrate (3) by a first etching process, and d) transferring the macroporous layer (10) through a second, different from the first etching process into a cantilevered membrane (15) by creating a cavity (20 ) under the macroporous layer (10), the second etching process being electropolishing.

7. The method according to claim 6, characterized in that between the steps b) and c) by additional etching methods such as wet chemical etching in KOH or reactive ion etching (RIE) Ätzkeime, in particular small depressions are provided for pre-structuring of the macropores to be generated before the actual production of the macroporous layer (10).

8. The method according to claim 6 or 7, characterized in that in step b) the layer (5) of n-doped regions for generating a mask only partially on the Si substrate (3) is formed, and in step c) the macroporous layer (10) is produced by means of electrochemical etching in a hydrofluoric acid-containing electrolyte, wherein an organic solvent such as dimethylformamide (DMF), dimethyl sulfoxide (DMSO) or acetonitrile (MeCN) is used as wetting agent.

9. The method according to claim 6 or 7, characterized in that in step b) the layer (5) of n-doped regions is formed continuously on the Si substrate (3) and then a mask of, for example, paint is applied, and in Step c) the macroporous layer (10) is produced by means of a dry etching process, whereby trench structures which extend over the entire thickness of the layer (10) are realized.

10. The method according to any one of claims 6 to 9, characterized in that in addition to the steps a) to d), the membrane (15) is provided with a funtionsschicht of, for example, platinum, palladium or nanocrystalline iron.