EP2052263A1 - Oscilloscope probe - Google Patents

Oscilloscope probe

Info

Publication number
EP2052263A1
EP2052263A1 EP07765099A EP07765099A EP2052263A1 EP 2052263 A1 EP2052263 A1 EP 2052263A1 EP 07765099 A EP07765099 A EP 07765099A EP 07765099 A EP07765099 A EP 07765099A EP 2052263 A1 EP2052263 A1 EP 2052263A1
Authority
EP
European Patent Office
Prior art keywords
voltage divider
oscilloscope probe
semiconductor substrate
resistor
input voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP07765099A
Other languages
German (de)
French (fr)
Inventor
Martin Peschke
Alexander Schild
Gerhard Kahmen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohde and Schwarz GmbH and Co KG
Original Assignee
Rohde and Schwarz GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohde and Schwarz GmbH and Co KG filed Critical Rohde and Schwarz GmbH and Co KG
Publication of EP2052263A1 publication Critical patent/EP2052263A1/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06766—Input circuits therefor

Definitions

  • the invention relates to an oscilloscope probe according to the preamble of the main claim.
  • Active probes for ground-based or differential oscilloscopes contain an impedance converter, which picks up the signal to be measured via the probe tip with high impedance and supplies it to the input of the oscilloscope at the output with a characteristic impedance of usually 50 ohms via a suitable RF cable.
  • an input voltage divider which is composed of resistors and capacitors and serves to increase the linear range of the amplifier and to compensate for its input capacitance.
  • This input divider provides the limiting element for further miniaturization of such active probes.
  • it produces parasitic effects which limit the bandwidth of such active probes.
  • such an amplifier may tend to oscillate if it is not low-impedance matched at the input. This is the case when the amplifier input is connected via a bonding wire to the input divider, which has a high impedance for high frequencies.
  • voltage dividers are used, which are either constructed of discrete components or realized in thick or thin film technology (for example, according to US Patent US 5,172,051, US 6,483,284, US 6,949,919, US 6,982,550, US 5,061,892, US 5,796,308 , US 6,720,828, US 6,967,473 or US 6,828,769).
  • the elements of the voltage divider are on a ceramic or PCB substrate arranged together with the intended as a separate component amplifier chip.
  • the adjustment of the voltage divider via potentiometers, varactor diodes or by laser alignment of resistor or capacitor surfaces on the substrate. In all these known arrangements, a large part of the substrate surface is occupied by the tunable voltage divider.
  • parasitic elements of the voltage divider generate unwanted frequency responses, which reduce the bandwidth to a few GHz. Such parasitic
  • At least a part, preferably the entire voltage divider, is constructed in integrated circuit technology together with the amplifier on the semiconductor substrate.
  • the voltage divider can be adjusted. This can be done for example by additional arrays of parallel and / or series-connected resistors or capacitors whose leads are selectively separated, for example in laser technology.
  • the components integrated on the semiconductor chip are substantially smaller than those in thick-film technology or as individual components, they are in the range of about 10 ⁇ m.
  • such a voltage divider can be constructed in a frequency range up to, for example, 10 GHz almost free from interfering parasitic elements.
  • the semiconductor chip can be placed directly on the substrate edge of the measuring head, which significantly reduces the dimension of the signal path of the probe and allow further miniaturization of the probes.
  • the immediate integration of input dividers and amplifiers also eliminates a hitherto conventional connection wire and a resulting previously disturbing high impedance at high frequencies.
  • the dimensions of the amplifier chip increase by the integration of this divider not or only slightly, since the chip area is usually limited by the size of the contact surfaces.
  • the entire input voltage divider is integrated on the amplifier chip, but alternatively only a part of this voltage divider can be integrated on the semiconductor chip, while the smallest possible part is implemented using conventional technology.
  • the capacitors and low-resistance resistors can be integrated on the semiconductor chip, while the high-resistance resistors (up to 2 MOhm) can be realized further in thick-film technology or as hybrid components on the substrate.
  • the invention can both be applied to both ground-based and differential probes.
  • Fig. 1 is a schematic sectional view of the probe according to the invention.
  • the invention shows an incorporated in a probe for an oscilloscope substrate 1 made of ceramic or in the form of a printed circuit board piece, on which a semiconductor chip is placed, on which z. B. as an ASIC on a corresponding semiconductor substrate 2, an amplifier 3 is integrated together with an input voltage divider 4.
  • the input of the voltage divider 4 is connected to a conductor track 5, which leads to the probe tip of the probe.
  • the output of the amplifier 3 is connected to a conductive track 6, which forms the output of the probe, which is connected via a cable to the actual oscilloscope, not shown.
  • resistors and capacitors voltage divider 4 In the region of the consisting of resistors and capacitors voltage divider 4, additional matrices of parallel and / or series-connected resistors or capacitors are preferably provided whose leads can be separated selectively in laser technology, so that trimmed the input voltage divider even after assembly of the probe can be.
  • These matrices are preferably semiconductor technology formed on the semiconductor substrate.
  • the resistor and capacitor elements constructed in semiconductor technology can also be characterized that their areas are selectively trimmed.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Disclosed is an oscilloscope probe comprising a transistor amplifier (3) which is mounted on a semiconductor substrate (2) as integrated circuitry. In said oscilloscope probe, at least part of the input voltage divider (4) is also mounted on the semiconductor substrate (2) as integrated circuitry along with the amplifier (3).

Description

Oszilloskop-Tastkopf Oscilloscope probe
Die Erfindung betrifft einen Oszilloskop-Tastkopf laut Oberbegriff des Hauptanspruches.The invention relates to an oscilloscope probe according to the preamble of the main claim.
Aktive Tastköpfe für massebezogene oder differentielle Oszilloskope beinhalten einen als Impedanzwandler dienenden Verstärker, der das zu messende Signal über die Tastspitze hochohmig abgreift und es am Ausgang mit einer charakteristischen Impedanz von meist 50 Ohm über ein entsprechendes HF-Kabel dem Eingang des Oszilloskops zuführt. Vor diesem Verstärker ist im allgemeinen ein Eingangsspannungsteiler vorgeschaltet, der aus Widerständen und Kondensatoren aufgebaut ist und dazu dient, den linearen Bereich des Verstärkers zu erhöhen und dessen Eingangskapazität zu kompensieren. Dieser Eingangsteiler stellt das begrenzende Element für die weitere Miniaturisierung solcher aktiver Tastköpfe dar. Außerdem erzeugt er parasitäre Effekte, welche die Bandbreite solcher aktiver Tastköpfe begrenzen. Zuletzt kann ein solcher Verstärker zu Schwingungen neigen, wenn er am Eingang nicht niederohmig angepasst ist. Dies ist der Fall, wenn der Verstärkereingang über einen Bonddraht mit dem Eingangsteiler verbunden ist, der für hohe Frequenzen eine hohe Impedanz aufweist.Active probes for ground-based or differential oscilloscopes contain an impedance converter, which picks up the signal to be measured via the probe tip with high impedance and supplies it to the input of the oscilloscope at the output with a characteristic impedance of usually 50 ohms via a suitable RF cable. In front of this amplifier is generally preceded by an input voltage divider, which is composed of resistors and capacitors and serves to increase the linear range of the amplifier and to compensate for its input capacitance. This input divider provides the limiting element for further miniaturization of such active probes. In addition, it produces parasitic effects which limit the bandwidth of such active probes. Finally, such an amplifier may tend to oscillate if it is not low-impedance matched at the input. This is the case when the amplifier input is connected via a bonding wire to the input divider, which has a high impedance for high frequencies.
Bei allen bisher bekannten aktiven Tastköpfen für Oszilloskope werden Spannungsteiler benutzt, die entweder aus diskreten Bauelementen aufgebaut sind oder in Dick- oder Dünnschichttechnik realisiert sind (beispielsweise nach US-Patentschriften US 5,172,051, US 6,483,284, US 6,949,919, US 6,982,550, US 5,061,892, US 5,796,308, US 6,720,828, US 6,967,473 oder US 6,828,769). Die Elemente des Spannungsteilers sind dabei auf einem Keramik- oder Leiterplatten-Substrat zusammen mit dem als eigenes Bauteil vorgesehenen Verstärkerchip angeordnet. Der Abgleich des Spannungsteilers erfolgt über Potentiometer, Varaktordioden oder durch Laserabgleich von Widerstands- oder Kondensatorflächen auf dem Substrat. Bei allen diesen bekannten Anordnungen wird ein großer Teil der Substratfläche von dem abgleichbaren Spannungsteiler belegt. Außerdem erzeugen parasitäre Elemente des Spannungsteilers ungewollte Frequenzgänge, die die Bandbreite auf wenige GHz reduzieren. Solche parasitäreIn all previously known active probes for oscilloscopes voltage dividers are used, which are either constructed of discrete components or realized in thick or thin film technology (for example, according to US Patent US 5,172,051, US 6,483,284, US 6,949,919, US 6,982,550, US 5,061,892, US 5,796,308 , US 6,720,828, US 6,967,473 or US 6,828,769). The elements of the voltage divider are on a ceramic or PCB substrate arranged together with the intended as a separate component amplifier chip. The adjustment of the voltage divider via potentiometers, varactor diodes or by laser alignment of resistor or capacitor surfaces on the substrate. In all these known arrangements, a large part of the substrate surface is occupied by the tunable voltage divider. In addition, parasitic elements of the voltage divider generate unwanted frequency responses, which reduce the bandwidth to a few GHz. Such parasitic
Elemente sind vor allem Induktivitäten und Kapazitäten der relativ großen Dickschichtelemente im Millimeterbereich sowie die Induktivität der Bonddrähte zwischen den Elementen. Beim Aufbau aus diskreten Bauelementen ist der Einfluss der parasitären Elemente für gewöhnlich noch dominanter.Elements are above all inductances and capacities of the relatively large thick-film elements in the millimeter range as well as the inductance of the bonding wires between the elements. When constructed from discrete components, the influence of the parasitic elements is usually even more dominant.
Es ist daher Aufgabe der Erfindung, einen Oszilloskop- Tastkopf mit Eingangsspannungsteiler und Verstärker zu schaffen, der diese Nachteile vermeidet.It is therefore an object of the invention to provide an oscilloscope probe with input voltage divider and amplifier, which avoids these disadvantages.
Diese Aufgabe wird ausgehend von einem Oszilloskop- Tastkopf laut Oberbegriff des Hauptanspruches durch dessen kennzeichnende Merkmale gelöst. Eine vorteilhafte Weiterbildung ergibt sich aus dem Unteranspruch.This object is achieved on the basis of an oscilloscope probe head according to the preamble of the main claim by its characterizing features. An advantageous development results from the dependent claim.
Gemäß der Erfindung wird mindestens ein Teil, vorzugsweise der gesamte Spannungsteiler in integrierter Schaltungstechnik zusammen mit dem Verstärker auf dem Halbleitersubstrat aufgebaut. In der modernenAccording to the invention, at least a part, preferably the entire voltage divider, is constructed in integrated circuit technology together with the amplifier on the semiconductor substrate. In the modern day
Halbleitertechnologie ist es ohne weiteres möglich, zusätzliche Trimmpunkte auf dem Halbleitersubstrat vorzusehen, durch die auch noch nach dem Zusammenbau des Tastkopfes der Spannungsteiler abgeglichen werden kann. Dies kann beispielsweise durch zusätzliche Matrizen aus parallel und/oder seriell geschalteten Widerständen oder Kondensatoren erfolgen, deren Zuleitungen selektiv beispielsweise in Lasertechnik aufgetrennt werden. Die auf dem Halbleiterchip integrierten Bauelemente sind wesentlich kleiner als solche in Dickschichttechnologie oder als Einzelbauelemente, sie liegen im Bereich von etwa 10 μm. Damit kann ein solcher Spannungsteiler in einem Frequenzbereich bis beispielsweise 10 GHz nahezu frei von störenden parasitären Elementen aufgebaut werden. Außerdem kann der Halbleiterchip direkt an die Substratkante des Messkopfes gesetzt werden, was die Abmessung des Signalpfades des Tastkopfes erheblich reduziert und eine weitere Miniaturisierung der Tastköpfe erlauben. Durch die unmittelbare Integrierung von Eingangsteiler und Verstärker entfällt außerdem ein bisher üblicher Verbindungsdraht und eine daraus resultierende bisher störende hohe Impedanz bei hohen Frequenzen. Die Abmessungen des Verstärker-Chips erhöhen sich durch die Integration dieses Teilers nicht oder nur unwesentlich, da die Chipfläche zumeist durch die Größe der Kontaktflächen limitiert ist.Semiconductor technology, it is readily possible to provide additional trim points on the semiconductor substrate, by which even after assembly of the probe, the voltage divider can be adjusted. This can be done for example by additional arrays of parallel and / or series-connected resistors or capacitors whose leads are selectively separated, for example in laser technology. The components integrated on the semiconductor chip are substantially smaller than those in thick-film technology or as individual components, they are in the range of about 10 μm. Thus, such a voltage divider can be constructed in a frequency range up to, for example, 10 GHz almost free from interfering parasitic elements. In addition, the semiconductor chip can be placed directly on the substrate edge of the measuring head, which significantly reduces the dimension of the signal path of the probe and allow further miniaturization of the probes. The immediate integration of input dividers and amplifiers also eliminates a hitherto conventional connection wire and a resulting previously disturbing high impedance at high frequencies. The dimensions of the amplifier chip increase by the integration of this divider not or only slightly, since the chip area is usually limited by the size of the contact surfaces.
Wenn möglich wird der gesamte Eingangsspannungsteiler auf dem Verstärkerchip integriert, alternativ kann aber auch nur ein Teil dieses Spannungsteilers auf dem Halbleiterchip integriert werden, während ein möglichst geringer Teil in herkömmlicher Technik ausgeführt ist. So können beispielsweise die Kondensatoren und niederohmigen Widerstände auf dem Haltleiterchip integriert werden, während die hochohmigen Widerstände (bis 2 MOhm) weiterhin in Dickschichttechnologie oder als hybride Bauelemente auf dem Substrat realisiert werden. Die Erfindung kann sowohl bei massebezogenen als auch bei differenziellen Tastköpfen angewendet werden.If possible, the entire input voltage divider is integrated on the amplifier chip, but alternatively only a part of this voltage divider can be integrated on the semiconductor chip, while the smallest possible part is implemented using conventional technology. Thus, for example, the capacitors and low-resistance resistors can be integrated on the semiconductor chip, while the high-resistance resistors (up to 2 MOhm) can be realized further in thick-film technology or as hybrid components on the substrate. The invention can both be applied to both ground-based and differential probes.
Die Erfindung wird im Folgenden anhand einer schematischen Zeichnungen an einem Ausführungsbeispiel näher erläutert. In der Zeichnung zeigt:The invention is explained in more detail below with reference to a schematic drawings of an exemplary embodiment. In the drawing shows:
Fig. 1 eine schematische Schnittdarstellung des erfindungsgemäßen Tastkopfs.Fig. 1 is a schematic sectional view of the probe according to the invention.
Die Erfindung zeigt ein in einem Tastkopf für ein Oszilloskop eingebautes Substrat 1 aus Keramik oder in Form eines Leiterplattenstücks, auf dem ein Halbleiterchip aufgesetzt ist, auf welchem z. B. als ASIC auf einem entsprechenden Halbleitersubstrat 2 ein Verstärker 3 zusammen mit einem Eingangsspannungsteiler 4 integriert ist. Der Eingang des Spannungsteilers 4 ist mit einer Leiterbahn 5 verbunden, die zur Tastspitze des Tastkopfes führt. Der Ausgang des Verstärkers 3 steht mit einer Leitbahn 6 in Verbindung, die den Ausgang des Tastkopfs bildet, der über ein Kabel mit dem eigentlichen nicht dargestellten Oszilloskop verbunden ist.The invention shows an incorporated in a probe for an oscilloscope substrate 1 made of ceramic or in the form of a printed circuit board piece, on which a semiconductor chip is placed, on which z. B. as an ASIC on a corresponding semiconductor substrate 2, an amplifier 3 is integrated together with an input voltage divider 4. The input of the voltage divider 4 is connected to a conductor track 5, which leads to the probe tip of the probe. The output of the amplifier 3 is connected to a conductive track 6, which forms the output of the probe, which is connected via a cable to the actual oscilloscope, not shown.
Im Bereich des aus Widerständen und Kondensatoren bestehenden Spannungsteilers 4 sind vorzugsweise noch zusätzliche Matrizen aus parallel- und/oder seriell geschalteten Widerständen bzw. Kondensatoren vorgesehen, deren Zuleitungen selektiv in Lasertechnik aufgetrennt werden können, so dass der Eingangsspannungsteiler auch noch nach dem Zusammenbau des Tastkopfes getrimmt werden kann. Auch diese Matrizen sind vorzugsweise Halbleitertechnologie auf dem Halbleitersubstrat ausgebildet. Die in Halbleitertechnik aufgebauten Widerstands- und Kondensator-Elemente können auch dadurch abgeglichen werden, dass ihre Flächen selektiv beschnitten werden.In the region of the consisting of resistors and capacitors voltage divider 4, additional matrices of parallel and / or series-connected resistors or capacitors are preferably provided whose leads can be separated selectively in laser technology, so that trimmed the input voltage divider even after assembly of the probe can be. These matrices are preferably semiconductor technology formed on the semiconductor substrate. The resistor and capacitor elements constructed in semiconductor technology can also be characterized that their areas are selectively trimmed.
Die Erfindung ist nicht auf das dargestellte Ausfϋhrungsbeispiel beschränkt. Alle beschriebenen und/oder gezeichneten Merkmale sind beliebig miteinander kombinierbar . The invention is not limited to the illustrated embodiment. All described and / or drawn features can be combined with each other.

Claims

Patentansprüche claims
1. Oszilloskop-Tastkopf mit einem in integrierter Schaltungstechnik auf einem Halbleitersubstrat (2) aufgebauten Transistor-Verstärker (3) und einem diesem vorgeschalteten Eingangsspannungsteiler (4), dadurch gekennzeichnet, dass mindestens ein Teil des Eingangsspannungsteilers (4) ebenfalls in integrierter Schaltungstechnik zusammen mit dem Verstärker (3) auf dem Halbleitersubstrat (2) aufgebaut ist.1. oscilloscope probe with a built-in integrated circuit technology on a semiconductor substrate (2) transistor amplifier (3) and an upstream input voltage divider (4), characterized in that at least a portion of the input voltage divider (4) also in integrated circuit technology together with the amplifier (3) on the semiconductor substrate (2) is constructed.
2. Oszilloskop-Tastkopf nach Anspruch 1, dadurch gekennzeichnet, dass den in Halbleitertechnik aufgebauten Widerstands- und Kondensatorelementen des Eingangsspannungsteilers (4) abgleichbare Widerstands- und/oder Kondensator-Matrizen zugeordnet sind.2. oscilloscope probe according to claim 1, characterized in that the resistor constructed in semiconductor technology and capacitor elements of the input voltage divider (4) adjustable resistor and / or capacitor matrices are assigned.
3. Oszilloskop-Tastkopf nach Anspruch 1, dadurch gekennzeichnet, dass die in Halbleitertechnik aufgebauten Widerstands- und Kondensator-Element abgleichbar sind, indem ihre Flächen selektiv beschnitten werden.3. oscilloscope probe according to claim 1, characterized in that the constructed in semiconductor technology resistor and capacitor element can be adjusted by their surfaces are selectively cropped.
4. Oszilloskop-Tastkopf nach Anspruch 2 oder 3, dadurch gekennzeichnet, dass die Widerstands- und Kondensator-Matrizen bzw. die Widerstands- und Kondensator-Elemente auf dem Halbleitersubstrat so angeordnet sind, dass sie auch noch nach dem Zusammenbau des Tastkopfes abgleichbar sind. 4. oscilloscope probe according to claim 2 or 3, characterized in that the resistor and capacitor arrays or the resistor and capacitor elements are arranged on the semiconductor substrate so that they can be adjusted even after assembly of the probe.
5. Oszilloskop-Tastkopf nach einem der vorhergehenden5. Oscilloscope probe according to one of the preceding
Ansprüche, dadurch gekennzeichnet, dass nur die Kondensatoren und niederohmigen Widerstände des Eingangsspannungsteilers (4) auf dem Halbleitersubstrat integriert sind. Claims, characterized in that only the capacitors and low-resistance resistors of the input voltage divider (4) are integrated on the semiconductor substrate.
EP07765099A 2006-08-14 2007-07-05 Oscilloscope probe Ceased EP2052263A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006038027 2006-08-14
DE102006052748A DE102006052748A1 (en) 2006-08-14 2006-11-08 Oscilloscope probe
PCT/EP2007/005981 WO2008019732A1 (en) 2006-08-14 2007-07-05 Oscilloscope probe

Publications (1)

Publication Number Publication Date
EP2052263A1 true EP2052263A1 (en) 2009-04-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP07765099A Ceased EP2052263A1 (en) 2006-08-14 2007-07-05 Oscilloscope probe

Country Status (4)

Country Link
US (1) US8278953B2 (en)
EP (1) EP2052263A1 (en)
DE (1) DE102006052748A1 (en)
WO (1) WO2008019732A1 (en)

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DE102006052748A1 (en) 2008-04-30
WO2008019732A1 (en) 2008-02-21
US8278953B2 (en) 2012-10-02
US20100231199A1 (en) 2010-09-16

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