EP2041783A2 - Module having a flat structure, and equipment method - Google Patents

Module having a flat structure, and equipment method

Info

Publication number
EP2041783A2
EP2041783A2 EP07785583A EP07785583A EP2041783A2 EP 2041783 A2 EP2041783 A2 EP 2041783A2 EP 07785583 A EP07785583 A EP 07785583A EP 07785583 A EP07785583 A EP 07785583A EP 2041783 A2 EP2041783 A2 EP 2041783A2
Authority
EP
European Patent Office
Prior art keywords
substrate
bonding
module
bonded
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07785583A
Other languages
German (de)
French (fr)
Inventor
Christian Block
Sebastian Brunner
Christian Hoffmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of EP2041783A2 publication Critical patent/EP2041783A2/en
Withdrawn legal-status Critical Current

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Definitions

  • Modules are used to integrate different components on a substrate. Usually, components are interconnected via the modules. An encapsulation of the entire module can replace individual component encapsulations.
  • modules in the event of thermal cycling depends largely on the design and connection technology as well as the encapsulation of the module.
  • the bond wires present particular weak points, as they may be present at e.g. Due to different thermal expansion tensile stresses tend to tear, the function of the entire module is destroyed or destroyed.
  • One method of wire bonding is the so-called stand off stitch bonding (SSB) in which a so-called stud bump is first generated on a second bondpad.
  • a stud bump is the end of a bond wire that has been deformed into a ball by fusion, which is bonded to the bond pad and at which the wire over the ball is torn off immediately after bonding.
  • a conventional ball stitch is performed, whereby the bonding wire is bonded to a first bonding pad by means of its ball-shaped end and the other end of the bonding wire, designated as a wedge or stitch, is placed directly on the stud bump on the second bonding pad.
  • the so-called “reverse ball stitch” method becomes a stud-bump on the Component chip and the ball applied to the substrate.
  • the Stud Bump is used in the "Reverse Ball Stitch” bonding to the wedge at a distance from the second Bondpad réellebonden to protect damage to the chip surface through the wire-carrying capillary of the bonding machine, especially when the bonding wire is squeezed at the end.
  • thermal stability of modules with wire-bonded component chips depends essentially on the length of the bonding wires and in particular on the height of the loops which form the bonding wires fastened at both ends, in particular if the bonding wires are still covered with a glob top or module become.
  • Object of the present invention is to provide a module with wire-bonded component chips, which is resistant to thermal cycling.
  • a module which has a component chip bonded on and contacted to the module substrate by bonding wires.
  • the "reverse ball stitch" method already described is used, but the wire end of the bonding wire already bonded to the module substrate is bonded directly onto the bond pad of the component chip without a stud bump in between , the To lead bonding wire flat over the surface of the component chip without a large component chip protruding wire loop needs to be taken into account.
  • the bonding wire is conventionally bonded with a ball to the connection surfaces present there.
  • the bonding wire may have a round or even a rectangular cross-sectional area. In extreme cases, it is designed as a metal strip. This design is particularly flat feasible and has advantages, if over the bonding wire or the metal ribbon HF signals are to be performed. Because of the skin effect, RF signals have only a small "depth of immersion" in the metal strip A rectangular bonding wire allows a smaller overall height compared to a round bonding wire with the same cross-sectional area
  • Bonding wire used metal ribbon can be bonded at both ends as a wedge (Stictch) and needed as a first bond no ball.
  • Such a module can be covered with a glob top mass or an injection molding applied mold mass, which can be applied due to the lower loop height of the bonding wires in lower overall height than heretofore.
  • This increases the stability of the proposed module in that over the more unstable of the two bond connections of a bonding wire, namely over the wedge bond connection over the upward-facing surface of the component chip now only a small glob top thickness is applied.
  • the tensile and shear forces acting in the module due to different thermal expansion coefficients are a function of the glob top thickness applied over the corresponding vulnerable site, here the bondwire bond.
  • both the less resilient bond better protected and the overall lower Glob top height also increases the stability of the more stable bonding wire connection directly on the substrate.
  • a lower Glob Top cover also results in a lower module height.
  • a stud bump may be applied over the wedge bond. This sits on the bonding wire end and on the bond pad and provides an additional attachment of the bonding wire end, which makes this bond more stable against tearing off the bonding wire or releasing the bond.
  • the bonding device When wedging or stitch bonding, the bonding device, ie the wire-guiding capillary, must act on the bondpad with relatively high pressure.
  • the bonding pad according to the invention can be particularly designed. While previously the bondpond and then the passivation is generated, which leads to a partial overlap of the passivation on the bondpad, now the bondpad is designed so that it overlaps the passivation on all sides and they can not be damaged by the wire-guiding capillary.
  • a further reduction of the overall module height and in particular the required glob top height is achieved if the height of the components sitting on the substrate and in particular of the component chips is minimized.
  • the stability is additionally improved due to the lower glob top thickness.
  • the lower component chip height only has an advantageous effect on the module height if no SMD components are applied to the substrate. But even if additional SMD components are applied, a gain in stability is achieved with the advantageous proposed wire bond, which is independent of the applied Glob top thickness.
  • Resistors can be integrated in the module. Since these often can not be generated within the multilayer substrate, for example, SMD resistors can be used for this purpose. However, it is possible, and for a small module height, to replace SMD resistors with printed resistors deposited directly on the substrate surface. For example, a resistance paste before the sintering of the substrate as an inner layer pressure or after sintering printed as outer layer pressure and both against corrosion and against the galvanic reinforcement or the Damage / decomposition in the electroplating be covered with a passivation layer, in particular with a glass layer. Such an open resistance layer has the further advantage that it can be subsequently trimmed, for example by means of a laser.
  • An advantageous substrate material is a multilayer ceramic, in particular a LTCC (Low Temperature Cofired Ceramic), which comprises a plurality of dielectric ceramic layers, between which structured metallization levels are provided. Different metallization levels are connected via vias. By way of the metallization structures within the metallization levels and their connections via the plated-through holes, any interconnection patterns can be integrated in the substrate.
  • LTCC Low Temperature Cofired Ceramic
  • a substrate with bondable pads and a device chip with bond pads are first provided on its front side.
  • the bond pads are designed such that the bondable surface protrudes above the surface of the passivation and preferably partially overlaps the passivation.
  • the component chip is glued to the intended place on the substrate. It is possible to simultaneously use a corresponding "die-flag" to produce on the substrate an electrical backside connection of the chip. However, it is also possible to stick the chip in purely mechanically and to contact electrically only via bonding wires. This is done by bonding a bonding wire with the "ball” onto the pads on the substrate, then bending the bond wire into a flat loop so that it extends close to the surface of the device chip to the bond pad, directly to the surface of the bond pad on the outside pointing surface of the component chip is now the wedge (or stitch) set, in which the
  • Wire end of the bonding wire is placed flat or parallel to the bond pads aligned and bonded.
  • the bonding process may include an ultrasonically assisted thermal compression process or a so-called friction welding in which the pressure force, temperature and ultrasound interact and establish the bond.
  • the bond pad projecting beyond the passivation on the upward-pointing surface of the chip contributes to the fact that during the bonding process no direct action of the bonding tool - a wire-carrying capillary - on the passivation on the component chip takes place. This avoids damage to the passivation.
  • the wire By bonding the wire is torn off behind the wedge or squeezed through the capillary.
  • a stud bump is then placed over the wedge bond by melting the end of another bond wire into a ball and placing it on the bond site. After bonding, the excess wire is torn off leaving only the stud bump, the bond wire bonded to the end of the wedge, and the underlying bond wire Bondpad contacted and thus increases the strength of the wedge bond connection.
  • a number of wire bond connections corresponding to the number of contacts to be produced are produced according to the method just described. Subsequently, further possibly different component chips can be applied in the same or in flip-chip technology on the substrate, and optionally SMD components. It may make sense to produce the bonding wire connections for all the chips to be bonded on a substrate in a common method step.
  • FIG. 1 shows a schematic cross-section of conventional wire bond connections on a module
  • Figure 2 shows a module with inventive
  • FIG. 3 shows the production of the new bonding connection in comparison to a known ball stitch method.
  • FIG. 4 shows a wedge fastened with an additional studbump.
  • FIG. 1 shows a schematic cross-section of an exemplary module with a glued-on component chip BC, which is connected to the substrate SU via conventional and therefore known bonding wire connections.
  • bondable pads AF On the substrate are bondable pads AF, arranged on the back of the component chip BC bondable bond pads BP.
  • both a standard ball stitch bonding according to the left bonding wire BDI and a reverse stand off stitch bonding (reverse bonding SSB) corresponding to the second bonding wire BD2 on the right side are shown.
  • the bond wire end BS melted into a ball is first placed on the component chip or its bond pad and then pulled to the termination surface AF on the substrate SU, where a wedge bond WB is performed.
  • SMD components SMD can be arranged on the substrate SU. These usually have a component height that exceeds that of a component chip. While a device chip applied as bare die can be realized in a standard thickness of, for example, 200 ⁇ m, an SMD component requires a device height of typically 500 ⁇ m.
  • the module is also provided with a glob top cover GT, which is applied so thickly that the bonding wires BD are securely covered. This leads to a component height of at least d2, in the case of using SMD components to a component height d3, where d3 is larger d2.
  • FIG. 2 shows a component chip BC contacted according to the invention.
  • the device chip BC is glued to a substrate SU.
  • a bonding wire BD is bonded with its ball BS on the pad AF directly on the substrate.
  • the bonding wire is then drawn onto the upper side towards the bonding pads BP and bonded there directly to the bonding pad BP with a wedge connection WB. It turns out that the bonding wire can be guided in this way close to the component chip BC and leads only to a small projection over the component chip height.
  • the total height of the component d4 ' measured from the substrate to the highest bonding wire loop, is only insignificantly higher than the thickness of the component chip BC.
  • connection surfaces AF can be connected via plated-through holes DK with a metallization plane Ml hidden in the interior of the substrate. This can be connected via further plated-through holes to further metallization levels, metallization structures being produced in each metallization level a connection or for the realization of passive component structures are arranged. External contacts of the module can be arranged on the underside of the substrate SU.
  • the design according to the invention results in a height-reduced component which is realized even with a glob top cover with a smaller thickness of the glob top cover can.
  • a thinner glob top cover leads to lower shear forces at the interface to the component chip BC or to the substrate SU, which thus less load the bond connections and the chip when the thermal cycling stresses acting on the module.
  • FIG. 3 compares a known bond pad on the chip top side of a component chip BC with an embodiment of a bond pad that is advantageous for the new bonding method.
  • FIG. 3A shows the known bonding pad during the production of a bonding wire connection according to the reverse SSB method.
  • the bonding pad has a base metallization GM and above a reinforcing layer VS, which is characterized in particular by its bondability, for example a gold surface.
  • a passivation layer PS is applied to the chip surface and structured in such a way that a region of the bond pad is exposed. Usually, the edges of the passivation layer overlap the bonding pad.
  • a Stud-Bump SB is then bonded onto which a wedge can subsequently be placed in the reverse SSB method.
  • the bonding tool from the here only the bonding wire leading capillary K is shown, the bonding wire BD on the Stud Bump SB, it binds him there firmly and then tears or squeezes him off.
  • FIG. 3B shows a novel embodiment of the bondpad, in which initially a base metallization for the bondpad is produced on the substrate surface SU. Subsequently, the passivation is generated and optionally structured. Only after the passivation PS has been produced is a reinforcing layer VS applied over the bonding pad, for example by galvanic growth of a corresponding metal layer. This causes the edges of the reinforcing layer to grow over the edges of the passivation layer and eventually even overlap. Overall, the reinforcing layer is applied at a height such that it protrudes above the upper edge of the passivation layer. This supernatant replaces the stud bump of the conventional reverse SSB method.
  • Such a bonding pad surface raised above the surface of the passivation layer allows a problem-free direct bonding of a bonding wire end in the reverse ball-stitch method on the surface of the amplifier layer, without damaging the passivation layer PS with the capillary K.
  • FIG. 4 shows, in a schematic cross-section, how such a wire-bonded wire end is additionally fastened with a stud-bump SB, which is bonded directly onto the bond pad BP above the torn-off wire end.
  • the invention illustrated and explained only with reference to a few embodiments is not limited to the embodiments. Variation possibilities arise, in particular, in the type and number of components to be applied to the substrate. elements, which are applied as Bare Dies, for example. These may represent ICs or other active semiconductor devices.
  • the bare Die can also be a piezoelectric chip.
  • the device chip may have device structures on both surfaces and additionally within the chip. On the side to be stuck, it may have a base metallization or a ground contact.
  • An inventive module with minimized module height dispenses with SMD components.
  • the invention is not limited to modules without SMD components.
  • the arranged on the substrate components and device chips can have different heights, accordingly, the Glob Top cover can be designed in such a stepped manner that all components are just just covered by Glob Top or MoId (by injection molding).
  • the invention is also not limited to substrates from LTCC. Also possible are polymer substrates which, however, exhibited a thermal expansion behavior relative to the LTCC, which is less adapted to the expansion behavior of conventional device chips and in particular of semiconductors.
  • An inventive module can also be realized without Glob top cover, in which case, however, a different type of cover is required for protecting the bonding wire connections, for example a cap or the like.

Abstract

Disclosed is a module for electrical components. In said module, a component chip is glued to the top of a multilayer substrate which comprises integrated wiring and on which bondable terminal faces are provided. The component chip is fitted with bond pads on the upward-facing surface thereof and is connected to the substrate by means of bond wires. The bond wires are guided such that one respective ball thereof is bonded to a terminal face while the wedge thereof is bonded directly to one of the bond pads.

Description

Beschreibungdescription
Modul mit flachem Aufbau und Verfahren zur BestückungModule with flat structure and procedure for assembly
Module dienen zur Integration unterschiedlicher Bauelemente auf einem Substrat. Üblicherweise werden Bauelemente über die Module miteinander verschaltet. Eine Verkapselung des gesamten Moduls kann dabei einzelne Bauelementverkapselungen ersetzen.Modules are used to integrate different components on a substrate. Usually, components are interconnected via the modules. An encapsulation of the entire module can replace individual component encapsulations.
Die Zuverlässigkeit von Modulen bei Temperaturwechselbeanspruchungen hängt wesentlich von Aufbau und Verbindungstechnik sowie von der Verkapselung des Moduls ab. Bei Modulen, bei denen Bauelementchips über Bonddrähte mit dem Modulsubstrat verbunden sind, stellen die Bonddrähte besondere Schwachstellen dar, da sie bei z.B. durch unterschiedliche thermische Ausdehnung bedingten Zugspannungen zum Abreißen neigen, wobei die Funktion des gesamten Moduls ge- oder zerstört wird.The reliability of modules in the event of thermal cycling depends largely on the design and connection technology as well as the encapsulation of the module. For modules in which device chips are bonded to the module substrate via bond wires, the bond wires present particular weak points, as they may be present at e.g. Due to different thermal expansion tensile stresses tend to tear, the function of the entire module is destroyed or destroyed.
Eine Methode des Drahtbondens ist das so genannte Stand Off Stitch Bonden (SSB) bei dem zunächst ein so genannter Stud- Bump auf einem zweiten Bondpad erzeugt wird. Ein Stud-Bump ist das durch Anschmelzen zu einem Ball verformte Ende eines Bonddrahts, die auf das Bondpad aufgebondet wird und bei der unmittelbar nach dem Aufbonden der Draht über dem Ball abgerissen wird. Im zweiten Prozessschritt wird ein konventioneller Ball Stitch ausgeführt, wobei der Bonddraht mittels seines zu einem Ball verformten Endes auf ein erstes Bondpad aufgebondet wird und das als Wedge oder Stitch bezeichnete andere Ende des Bonddrahts direkt auf den Stud- Bump auf dem zweiten Bondpad platziert wird. Beim sogenannten „Reverse Ball Stitch" Verfahren wird ein Stud-Bump auf dem Bauelementchip und der Ball auf dem Substrat aufgebracht. Der Stud-Bump dient beim „Reverse Ball Stitch" Bonden dazu, den Wedge im Abstand vom zweiten Bondpad aufzubonden, um eine Beschädigung der Chipoberfläche durch die drahtführende Kapillare des Bondautomaten zu schützen, insbesondere wenn der Bonddraht am Schluss abgequetscht wird.One method of wire bonding is the so-called stand off stitch bonding (SSB) in which a so-called stud bump is first generated on a second bondpad. A stud bump is the end of a bond wire that has been deformed into a ball by fusion, which is bonded to the bond pad and at which the wire over the ball is torn off immediately after bonding. In the second process step, a conventional ball stitch is performed, whereby the bonding wire is bonded to a first bonding pad by means of its ball-shaped end and the other end of the bonding wire, designated as a wedge or stitch, is placed directly on the stud bump on the second bonding pad. The so-called "reverse ball stitch" method becomes a stud-bump on the Component chip and the ball applied to the substrate. The Stud Bump is used in the "Reverse Ball Stitch" bonding to the wedge at a distance from the second Bondpad aufzubonden to protect damage to the chip surface through the wire-carrying capillary of the bonding machine, especially when the bonding wire is squeezed at the end.
Es wurde gefunden, dass die thermische Stabilität von Modulen mit drahtgebondeten Bauelementchips wesentlich von der Länge der Bonddrähte und insbesondere von der Höhe der Schlaufen abhängig ist, die die an beiden Enden befestigen Bonddrähte ausbilden, insbesondere wenn die Bonddrähte noch mit einem Glob Top oder MoId abgedeckt werden.It has been found that the thermal stability of modules with wire-bonded component chips depends essentially on the length of the bonding wires and in particular on the height of the loops which form the bonding wires fastened at both ends, in particular if the bonding wires are still covered with a glob top or module become.
Aufgabe der vorliegenden Erfindung ist es, ein Modul mit drahtgebondeten Bauelementchips anzugeben, welches gegenüber thermischen Wechselbelastungen beständiger ist.Object of the present invention is to provide a module with wire-bonded component chips, which is resistant to thermal cycling.
Diese Aufgabe wird erfindungsgemäß durch ein Modul mit den Merkmalen von Anspruch 1 gelöst.This object is achieved by a module with the features of claim 1.
Vorteilhafte Ausgestaltungen der Erfindung sowie ein Verfahren zur Bestückung eines Moduls sind weiteren Ansprüchen zu entnehmen.Advantageous embodiments of the invention and a method for equipping a module can be found in further claims.
Es wird ein Modul angegeben, welches einen aufgeklebten und mittels Bonddrähten mit dem Modulsubstrat kontaktierten Bauelementchip aufweist. Zur Verringerung der Gesamtbauelement- höhe wird das bereits beschriebene „Reverse Ball Stitch" Verfahren eingesetzt, wobei jedoch das Drahtende des bereits auf das Modulsubstrat gebondeten Bonddrahts direkt auf das Bondpad des Bauelementchips ohne dazwischen liegenden Stud- Bump aufgebondet wird. Auf diese Weise ist es möglich, den Bonddraht flach über der Oberfläche des Bauelementchips zu führen, ohne dass eine große den Bauelementchip überstehende Drahtschlaufe in Kauf genommen zu werden braucht. Auf dem Substrat ist der Bonddraht herkömmlich mit einem Ball auf die dort vorhandenen Anschlussflächen gebondet .A module is specified which has a component chip bonded on and contacted to the module substrate by bonding wires. In order to reduce the overall component height, the "reverse ball stitch" method already described is used, but the wire end of the bonding wire already bonded to the module substrate is bonded directly onto the bond pad of the component chip without a stud bump in between , the To lead bonding wire flat over the surface of the component chip without a large component chip protruding wire loop needs to be taken into account. On the substrate, the bonding wire is conventionally bonded with a ball to the connection surfaces present there.
Der Bonddraht kann eine runde oder auch eine rechteckige Querschnittsfläche aufweisen. Im Extremfall ist er als Metallbändchen ausgeführt. Diese Bauform ist besonders flach führbar und hat vorteile, wenn über den Bonddraht bzw. das Metallbändchen HF Signale geführt werden sollen. Wegen des Skin-Effekts haben HF Signale eine nur geringe „Eintauchtiefe" in das Metallbändchen. Ein rechteckiger Bonddraht ermöglicht bei gleich großer Querschnittsfläche gegenüber einem runden Bonddraht eine geringere Bauhöhe. Ein alsThe bonding wire may have a round or even a rectangular cross-sectional area. In extreme cases, it is designed as a metal strip. This design is particularly flat feasible and has advantages, if over the bonding wire or the metal ribbon HF signals are to be performed. Because of the skin effect, RF signals have only a small "depth of immersion" in the metal strip A rectangular bonding wire allows a smaller overall height compared to a round bonding wire with the same cross-sectional area
Bonddraht verwendetes Metallbändchen kann an beiden Enden als Wedge (Stictch) aufgebondet werden und benötigt als ersten Bond keinen Ball.Bonding wire used metal ribbon can be bonded at both ends as a wedge (Stictch) and needed as a first bond no ball.
Ein solches Modul kann mit einer Glob Top Masse oder einer durch Injection Molding aufgebrachten Mold-Masse abgedeckt werden, die aufgrund der geringeren Schlaufenhöhe der Bonddrähte in niedrigerer Gesamthöhe als bislang aufgebracht werden kann. Dies erhöht die Stabilität des vorgeschlagenen Moduls dadurch, dass über der instabileren der beiden Bondverbindungen eines Bonddrahts, nämlich über der Wedge Bondverbindung über der nach oben weisenden Oberfläche des Bauelementchips nun eine nur geringe Glob Top Dicke aufzubringen ist. Die Zug- und Scherkräfte, die aufgrund unterschiedlicher thermischer Ausdehnungskoeffizienten im Modul wirken, sind eine Funktion der Glob Top Dicke, die über der entsprechenden anfälligen Stelle, hier der Bonddrahtanbindung aufgebracht ist. Damit wird sowohl die weniger belastungsfähige Bondver- bindung besser geschützt und durch die insgesamt niedrigere Glob Top Höhe wird auch die Stabilität der an sich stabileren Bonddrahtverbindung direkt auf dem Substrat erhöht. Eine niedrigere Glob Top Abdeckung führt außerdem zu einer niedri- geren Modul-Höhe.Such a module can be covered with a glob top mass or an injection molding applied mold mass, which can be applied due to the lower loop height of the bonding wires in lower overall height than heretofore. This increases the stability of the proposed module in that over the more unstable of the two bond connections of a bonding wire, namely over the wedge bond connection over the upward-facing surface of the component chip now only a small glob top thickness is applied. The tensile and shear forces acting in the module due to different thermal expansion coefficients are a function of the glob top thickness applied over the corresponding vulnerable site, here the bondwire bond. Thus, both the less resilient bond better protected and the overall lower Glob top height also increases the stability of the more stable bonding wire connection directly on the substrate. A lower Glob Top cover also results in a lower module height.
Zur weiteren Verbesserung der Festigkeit des Wedge gebondeten Bonddrahtendes kann über dem Wedgebond ein Stud-Bump aufgebracht werden. Dieser sitzt auf dem Bonddrahtende und auf dem Bondpad auf und stellt eine zusätzliche Befestigung des Bonddrahtendes dar, die diese Bondverbindung stabiler gegen Abreißen des Bonddrahtes beziehungsweise Lösen der Bondverbindung macht .To further improve the strength of the wedge-bonded bond wire end, a stud bump may be applied over the wedge bond. This sits on the bonding wire end and on the bond pad and provides an additional attachment of the bonding wire end, which makes this bond more stable against tearing off the bonding wire or releasing the bond.
Beim Wedge- oder Stitchbonden muss die Bondvorrichtung, also die drahtführende Kapillare mit relativ hohem Druck auf das Bondpad einwirken. Um dabei eine Beschädigung der auf der nach oben weisenden Oberfläche des Bauelementchips aufgebrachten Chippassivierung zu vermeiden, kann das Bondpad erfindungsgemäß besonders ausgestaltet werden. Während bislang zunächst das Bondpond und anschließend die Passivierung erzeugt wird, was zu einem teilweisen Überlappen der Passivierung über dem Bondpad führt, wird nun das Bondpad so ausgestaltet, dass es allseitig über der Passivierung übersteht und diese so von der drahtführenden Kapillare nicht beschädigt werden kann.When wedging or stitch bonding, the bonding device, ie the wire-guiding capillary, must act on the bondpad with relatively high pressure. In order to avoid damage to the applied on the upwardly facing surface of the chip chip Chippassivierung, the bonding pad according to the invention can be particularly designed. While previously the bondpond and then the passivation is generated, which leads to a partial overlap of the passivation on the bondpad, now the bondpad is designed so that it overlaps the passivation on all sides and they can not be damaged by the wire-guiding capillary.
Es wird daher vorgeschlagen, für das Bondpad zunächst eine Grundmetallisierung auf den Bauelementchip aufzubringen, anschließend eine Passivierung - falls erforderlich - zu erzeugen und dann auf die Grundmetallisierung eine Verstärkungsschicht aufzubringen, die eine bondbare Oberfläche schafft. Die Verstärkungsschicht wird dabei so aufgebracht, dass die Fuge zwischen der PassivierungsSchicht und der Grundmetallisierung abgedeckt ist. Vorteilhaft wird die zunächst von der PassivierungsSchicht überdeckte Oberfläche der Grundmetallisierung in einem in die PassivierungsSchicht strukturierten Fenster frei gelegt. Darüber wird die Verstärkungsschicht so aufgebracht, dass sie eine größere Grundfläche als das Fenster einnimmt und daher die Ränder der Passivierungsschicht überlappt.It is therefore proposed to first apply a base metallization to the component chip for the bond pad, then to produce a passivation, if necessary, and then to apply a reinforcing layer to the base metallization, which creates a bondable surface. The reinforcing layer is applied in this way, that the gap between the passivation layer and the base metallization is covered. Advantageously, the surface of the base metallization initially covered by the passivation layer is exposed in a window structured in the passivation layer. In addition, the reinforcing layer is applied so that it occupies a larger base area than the window and therefore overlaps the edges of the passivation layer.
Eine weitere Reduzierung der Modulgesamthöhe und insbesondere der erforderlichen Glob Top Höhe wird erreicht, wenn die Höhe der auf dem Substrat aufsitzenden Bauelemente und insbesondere der Bauelementchips minimiert wird. Neben der dadurch geringeren Modulhöhe wird zusätzlich die Stabilität aufgrund der geringeren Glob Top Dicke verbessert.A further reduction of the overall module height and in particular the required glob top height is achieved if the height of the components sitting on the substrate and in particular of the component chips is minimized. In addition to the resulting lower module height, the stability is additionally improved due to the lower glob top thickness.
Die geringere Bauelementchiphöhe wirkt sich nur dann vorteilhaft auf die Modulhöhe aus, wenn auf dem Substrat keine SMD- Bauelemente aufgebracht sind. Doch auch wenn zusätzlich SMD- Bauelemente aufgebracht sind, wird mit der vorteilhaften vorgeschlagenen Drahtbondung ein Stabilitätsgewinn erzielt, der unabhängig von der aufgebrachten Glob Top Dicke ist.The lower component chip height only has an advantageous effect on the module height if no SMD components are applied to the substrate. But even if additional SMD components are applied, a gain in stability is achieved with the advantageous proposed wire bond, which is independent of the applied Glob top thickness.
Im Modul können Widerstände integriert sein. Da diese oft nicht innerhalb des mehrschichtigen Substrat erzeugt werden können, können dazu beispielsweise SMD-Widerstände eingesetzt werden. Möglich ist es jedoch und für eine geringe Modulhöhe auch erforderlich, SMD-Widerstände durch gedruckte Widerstände zu ersetzen, die direkt auf der Substratoberfläche aufgebracht sind. Beispielsweise kann eine Widerstandspaste vor dem Sintern des Substrats als Innenlagendruck oder nach dem Sintern als Außenlagendruck aufgedruckt und sowohl gegen Korrosion als auch gegen die galvanische Verstärkung oder die Beschädigung/Zersetzung bei der Galvanik mit einer Passivierungsschicht abgedeckt werden, insbesondere mit einer Glasschicht. Eine solche offen liegende Widerstandsschicht hat den weiteren Vorteil, dass es sich nachträglich trimmen lässt, beispielsweise mittels eines Lasers.Resistors can be integrated in the module. Since these often can not be generated within the multilayer substrate, for example, SMD resistors can be used for this purpose. However, it is possible, and for a small module height, to replace SMD resistors with printed resistors deposited directly on the substrate surface. For example, a resistance paste before the sintering of the substrate as an inner layer pressure or after sintering printed as outer layer pressure and both against corrosion and against the galvanic reinforcement or the Damage / decomposition in the electroplating be covered with a passivation layer, in particular with a glass layer. Such an open resistance layer has the further advantage that it can be subsequently trimmed, for example by means of a laser.
Ein vorteilhaftes Substratmaterial ist eine mehrschichtige Keramik, insbesondere eine LTCC (Low Temperature Cofired Ceramic) , die mehrere dielektrische Keramikschichten umfasst, zwischen denen strukturierte Metallisierungsebenen vorgesehen sind. Unterschiedliche Metallisierungsebenen sind über Durchkontaktierungen verbunden. Über die Metallisierungsstrukturen innerhalb der Metallisierungsebenen und deren Verbindungen über die Durchkontaktierungen können beliebige Verschaltungsmuster in dem Substrat integriert werden.An advantageous substrate material is a multilayer ceramic, in particular a LTCC (Low Temperature Cofired Ceramic), which comprises a plurality of dielectric ceramic layers, between which structured metallization levels are provided. Different metallization levels are connected via vias. By way of the metallization structures within the metallization levels and their connections via the plated-through holes, any interconnection patterns can be integrated in the substrate.
Möglich ist es auch, auf diese Art und Weise bestimmte passive Komponenten zu realisieren, beispielsweise Widerstände, Kapazitäten und Induktivitäten. Auf diese Weise können daher auch einfache Schaltungen direkt im Substrat erzeugt werden, beispielsweise AnpassSchaltungen.It is also possible to realize in this way certain passive components, such as resistors, capacitors and inductors. In this way, therefore, even simple circuits can be generated directly in the substrate, for example matching circuits.
Zum Bestücken eines Substrats für ein Modul in der vorgeschlagenen Ausführung mit niedriger Bauhöhe wird zunächst ein Substrat mit bondbaren Anschlussflächen und ein Bauelementchip mit Bondpads auf seiner Vorderseite vorgesehen. Die Bondpads sind so ausgestaltet, dass die bondbare Oberfläche über der Oberfläche der Passivierung übersteht und vorzugsweise die Passivierung teilweise überlappt.To populate a substrate for a module in the proposed low-height version, a substrate with bondable pads and a device chip with bond pads are first provided on its front side. The bond pads are designed such that the bondable surface protrudes above the surface of the passivation and preferably partially overlaps the passivation.
Im ersten Schritt wird der Bauelementchip auf den vorgesehenen Platz auf dem Substrat aufgeklebt. Dabei ist es möglich, gleichzeitig über einen entsprechenden „die-flag" auf dem Substrat einen elektrischen Rückseitenanschluss des Chips herzustellen. Möglich ist es jedoch auch, den Chip rein mechanisch aufzukleben und elektrisch ausschließlich über Bonddrähte zu kontaktieren. Dazu wird ein Bonddraht mit dem „ball" auf die Anschlussflächen auf dem Substrat aufgebondet . Anschließend wird der Bonddraht zu einer flachen Schlaufe so gebogen, dass er nahe der Oberfläche des Bauelementchips bis zum Bondpad verläuft. Direkt auf die Oberfläche des Bondpads auf der nach außen weisenden Oberfläche des Bauelementchips wird nun der Wedge (bzw. Stitch) gesetzt, bei dem dasIn the first step, the component chip is glued to the intended place on the substrate. It is possible to simultaneously use a corresponding "die-flag" to produce on the substrate an electrical backside connection of the chip. However, it is also possible to stick the chip in purely mechanically and to contact electrically only via bonding wires. This is done by bonding a bonding wire with the "ball" onto the pads on the substrate, then bending the bond wire into a flat loop so that it extends close to the surface of the device chip to the bond pad, directly to the surface of the bond pad on the outside pointing surface of the component chip is now the wedge (or stitch) set, in which the
Drahtende des Bonddrahts flach bzw. parallel zum Bondpads ausgerichtet aufgesetzt und aufgebondet wird.Wire end of the bonding wire is placed flat or parallel to the bond pads aligned and bonded.
Das Bondverfahren kann ein ultraschallunterstütztes Thermo- kompressionsverfahren oder ein so genanntes Reibschweißen umfassen, bei der Andruckskraft , Temperatur und Ultraschall zusammenwirken und die Bondverbindung herstellen. Das über die Passivierung überstehende Bondpad auf der nach oben weisenden Oberfläche des Chips trägt dazu bei, dass während des Bondverfahrens kein direktes Einwirken des Bondwerkzeugs - eine drahtführende Kapillare - auf die Passivierung auf dem Bauelementchip stattfindet. Dadurch wird eine Beschädigung der Passivierung vermieden.The bonding process may include an ultrasonically assisted thermal compression process or a so-called friction welding in which the pressure force, temperature and ultrasound interact and establish the bond. The bond pad projecting beyond the passivation on the upward-pointing surface of the chip contributes to the fact that during the bonding process no direct action of the bonding tool - a wire-carrying capillary - on the passivation on the component chip takes place. This avoids damage to the passivation.
Durch das Aufbonden wird der Draht hinter dem Wedge abgerissen bzw. durch die Kapillare abgequetscht. Wahlweise wird anschließend über die Wedge Bondverbindung ein Stud-Bump gesetzt, indem das Ende eines weiteren Bonddrahts zu einem Ball aufgeschmolzen und auf die Bondstelle aufgesetzt wird. Nach dem Aufbonden wird der überstehende Draht abgerissen, wobei ausschließlich der Stud-Bump verbleibt, der das Ende des Wedge gebondeten Bonddraht und das darunter liegende Bondpad kontaktiert und so die Festigkeit der Wedge Bondverbindung erhöht .By bonding the wire is torn off behind the wedge or squeezed through the capillary. Optionally, a stud bump is then placed over the wedge bond by melting the end of another bond wire into a ball and placing it on the bond site. After bonding, the excess wire is torn off leaving only the stud bump, the bond wire bonded to the end of the wedge, and the underlying bond wire Bondpad contacted and thus increases the strength of the wedge bond connection.
Es wird eine der Anzahl der herzustellenden Kontakte ent- sprechende Anzahl von Drahtbondverbindungen nach dem eben beschriebenen Verfahren erzeugt. Anschließend können weitere gegebenenfalls davon verschiedene Bauelementchips in gleicher oder in Flip-Chip Technik auf dem Substrat aufgebracht werden, sowie gegebenenfalls SMD-Bauelemente. Sinnvoll kann es sein, die Bonddrahtverbindungen für alle derart auf einem Substrat aufzubondenden Chips in einem gemeinsamen Verfahrensschritt herzustellen.A number of wire bond connections corresponding to the number of contacts to be produced are produced according to the method just described. Subsequently, further possibly different component chips can be applied in the same or in flip-chip technology on the substrate, and optionally SMD components. It may make sense to produce the bonding wire connections for all the chips to be bonded on a substrate in a common method step.
Zum Schutz der aufgebrachten Bauelemente und insbesondere ihrer Bonddrahtverbindungen werden diese anschließend unter einer Glob Top Masse oder MoId Masse abgedeckt. Die Bonddrähte und die Bauelemente werden so vor mechanischer Beschädigung und vor Korrosion geschützt.To protect the applied components and in particular their bonding wire connections, these are then covered under a Glob Top mass or MoId mass. The bonding wires and the components are thus protected against mechanical damage and against corrosion.
Im Folgenden wird die Erfindung anhand von Ausführungsbeispielen und der dazugehörigen Figuren näher erläutert. Die nur schematisch ausgeführten Figuren sind nicht maßstabsgetreu, so dass ihnen weder absolute noch relative Maßangaben zu entnehmen sind. Gleiche oder gleichwirkende Teile sind mit gleichen Bezugszeichen bezeichnet.In the following the invention will be explained in more detail by means of exemplary embodiments and the associated figures. The only schematically executed figures are not true to scale, so that they are neither absolute nor relative dimensions can be found. Identical or equivalent parts are designated by the same reference numerals.
Figur 1 zeigt im schematischen Querschnitt herkömmliche Drahtbondverbindungen auf einem Modul ,FIG. 1 shows a schematic cross-section of conventional wire bond connections on a module,
Figur 2 zeigt ein Modul mit erfindungsgemäßenFigure 2 shows a module with inventive
Drahtbondverbindungen im schematischen Querschnitt, Figur 3 zeigt die Herstellung der neuen Bondverbindung im Vergleich zu einem bekannten Ball Stitch Verfahren,Wire bonds in schematic cross section, FIG. 3 shows the production of the new bonding connection in comparison to a known ball stitch method.
Figur 4 zeigt einen mit einem zusätzlichen Studbump befestigten Wedge.FIG. 4 shows a wedge fastened with an additional studbump.
Figur 1 zeigt im schematischen Querschnitt ein beispielhaftes Modul mit einem aufgeklebten Bauelementchip BC, der über herkömmliche und daher bekannte Bonddrahtverbindungen mit dem Substrat SU verbunden ist. Auf dem Substrat sind bondbare Anschlussflächen AF, auf der Rückseite des Bauelementchips BC bondbare Bondpads BP angeordnet. In der Figur ist sowohl eine Standard Ball Stitch Bondverbindung entsprechend dem linken Bondraht BDI als auch eine Reverse Stand off Stitch (Reverse SSB) Bondverbindung entsprechend dem zweiten Bonddraht BD2 auf der rechten Seite dargestellt. Bei der herkömmlichen Ball Stitch Bondverbindung wird das zu einem Ball geschmolzene Bonddrahtende BS zunächst auf dem Bauelementchip beziehungsweise dessen Bondpad aufgesetzt und anschließend zur An- Schlussfläche AF auf dem Substrat SU gezogen, wo ein Wedge Bond WB durchgeführt wird. In umgekehrter Reihenfolge wird beim Reverse SSB zunächst ein Stud-Bump SB auf dem Bondpad BP aufgesetzt und der Bonddraht über dem dort erzeugten Ball abgerissen, wobei der Studbump verbleibt. Anschließend wird ein Bonddrahtende mit dem Ball BS auf die Anschlussfläche AF auf- gebondet und der Bonddraht BD2 anschließend hin zum Stud-Bump SB gezogen und dort eine Wedge Bondverbindung hergestellt.1 shows a schematic cross-section of an exemplary module with a glued-on component chip BC, which is connected to the substrate SU via conventional and therefore known bonding wire connections. On the substrate are bondable pads AF, arranged on the back of the component chip BC bondable bond pads BP. In the figure, both a standard ball stitch bonding according to the left bonding wire BDI and a reverse stand off stitch bonding (reverse bonding SSB) corresponding to the second bonding wire BD2 on the right side are shown. In the conventional Ball Stitch Bond connection, the bond wire end BS melted into a ball is first placed on the component chip or its bond pad and then pulled to the termination surface AF on the substrate SU, where a wedge bond WB is performed. In reverse order the reverse SSB first a Stud-Bump SB is placed on the Bondpad BP and demolished the bonding wire on the ball generated there, the Studbump remains. Subsequently, a bonding wire end is bonded onto the connection surface AF with the ball BS, and the bonding wire BD2 is subsequently pulled up to the stud bump SB, where a wedge bonding connection is produced.
Es zeigt sich, dass bereits die Reverse SSB-Technik zu einer um den Abstand dl verminderten Bauhöhe des Moduls führt, wenn die oberste Schlaufe eines Bonddrahts bauhöhebestimmend ist. Die damit gewonnene Einsparung (entsprechend dl) kann bei gängigen Bauelementen beziehungsweise gängigen Bonddraht- schleifen 50 bis 100 μm betragen. Zusätzlich können auf dem Substrat SU SMD-Bauelemente SMD angeordnet sein. Diese weisen üblicherweise eine Bauelementhöhe auf, die die eines Bauelementchips übertrifft. Während ein als Bare Die aufgebrachter Bauelementchip in einer Standarddicke von beispielsweise 200 μm realisiert sein kann, benötigt ein SMD-Bauelement eine Bauelementhöhe von typischerweise 500 μm. Zum Schutz ist das Modul noch mit einer Glob Top Abdeckung GT versehen, die so dick aufgebracht wird, dass die Bonddrähte BD sicher abge- deckt sind. Dies führt einer Bauelementhöhe von zumindest d2 , im Fall zur Verwendung von SMD-Bauteilen zu einer Bauelementhöhe d3 , wobei d3 größer d2.It turns out that even the reverse SSB technique leads to a reduced height of the module by the distance dl, when the uppermost loop of a bonding wire determines the height of the building. The savings thus achieved (corresponding to dl) can be achieved with common components or common bonding wire Grinding 50 to 100 microns amount. In addition, SMD components SMD can be arranged on the substrate SU. These usually have a component height that exceeds that of a component chip. While a device chip applied as bare die can be realized in a standard thickness of, for example, 200 μm, an SMD component requires a device height of typically 500 μm. For protection, the module is also provided with a glob top cover GT, which is applied so thickly that the bonding wires BD are securely covered. This leads to a component height of at least d2, in the case of using SMD components to a component height d3, where d3 is larger d2.
Figur 2 zeigt dagegen einen erfindungsgemäß kontaktierten Bauelementchip BC. Auch hier ist der Bauelementchip BC auf ein Substrat SU aufgeklebt. Ein Bonddraht BD ist mit seinem Ball BS auf die Anschlussfläche AF direkt auf dem Substrat aufgebondet . Der Bonddraht wird nun auf die Oberseite hin zu den Bondpads BP gezogen und dort mit einer Wedgeverbindung WB direkt auf das Bondpad BP aufgebondet. Es zeigt sich, dass der Bonddraht auf diese Weise nahe am Bauelementchip BC geführt werden kann und nur zu einem geringen Überstand über Bauelementchiphöhe führt. Die Gesamthöhe des Bauelements d4 ' , gemessen vom Substrat bis zur höchsten Bonddrahtschlaufe, ist nur unwesentlich höher als die Dicke des Bauelementchips BC.In contrast, FIG. 2 shows a component chip BC contacted according to the invention. Again, the device chip BC is glued to a substrate SU. A bonding wire BD is bonded with its ball BS on the pad AF directly on the substrate. The bonding wire is then drawn onto the upper side towards the bonding pads BP and bonded there directly to the bonding pad BP with a wedge connection WB. It turns out that the bonding wire can be guided in this way close to the component chip BC and leads only to a small projection over the component chip height. The total height of the component d4 ', measured from the substrate to the highest bonding wire loop, is only insignificantly higher than the thickness of the component chip BC.
Weiterhin ist in Figur 2 im mehrlagigen Substrat SU eine Mehrlagenverdrahtung angedeutet. Dabei können die Anschlussflächen AF über Durchkontaktierungen DK mit einer im Inneren des Substrats verborgenen Metallisierungsebene Ml verbunden sein. Diese kann über weitere Durchkontaktierungen mit wie- teren Metallisierungsebenen verbunden sein, wobei in jeder Metallisierungsebene Metallisierungsstrukturen zum Herstellen einer Verschaltung oder zum Realisieren von passiven Bauelementstrukturen angeordnet sind. Außenkontakte des Moduls können auf der Unterseite des Substrat SU angeordnet sein.Furthermore, a multi-layer wiring is indicated in the multilayer substrate SU in FIG. In this case, the connection surfaces AF can be connected via plated-through holes DK with a metallization plane Ml hidden in the interior of the substrate. This can be connected via further plated-through holes to further metallization levels, metallization structures being produced in each metallization level a connection or for the realization of passive component structures are arranged. External contacts of the module can be arranged on the underside of the substrate SU.
Werden bei der bekannten Ausführung nach Figur 1 und der erfindungsgemäßen Ausführung nach Figur 2 Bauelementchips gleicher Bauelementhöhe eingesetzt, so ergibt sich mit der erfindungsgemäßen Ausführung ein höhenreduziertes Bauelement, welches auch bei einer Glob Top Abdeckung mit einer gering- eren Dicke der Glob Top Abdeckung realisiert werden kann. Eine dünnere Glob Top Abdeckung führt am Interface zum Bauelementchip BC oder zum Substrat SU hin zu geringeren Scherkräften, die somit bei auf das Modul einwirkenden Temperaturwechselbelastungen die Bondverbindungen und den Chip weniger belasten.If, in the known embodiment according to FIG. 1 and the embodiment according to FIG. 2, component chips of the same component height are used, the design according to the invention results in a height-reduced component which is realized even with a glob top cover with a smaller thickness of the glob top cover can. A thinner glob top cover leads to lower shear forces at the interface to the component chip BC or to the substrate SU, which thus less load the bond connections and the chip when the thermal cycling stresses acting on the module.
Figur 3 vergleicht ein bekanntes Bondpad auf der Chipoberseite eines Bauelementchips BC mit einer für das neue Bondverfahren vorteilhafte Ausgestaltung eines Bondpads . Figur 3A zeigt das bekanntes Bondpad während der Herstellung einer Bonddrahtverbindung gemäß dem Reverse SSB-Verfahren. Das Bondpad weist eine Grundmetallisierung GM und darüber eine Verstärkungsschicht VS auf, die sich insbesondere durch ihre Bondbarkeit, beispielsweise eine Goldoberfläche auszeichnet.FIG. 3 compares a known bond pad on the chip top side of a component chip BC with an embodiment of a bond pad that is advantageous for the new bonding method. FIG. 3A shows the known bonding pad during the production of a bonding wire connection according to the reverse SSB method. The bonding pad has a base metallization GM and above a reinforcing layer VS, which is characterized in particular by its bondability, for example a gold surface.
Nach dem Herstellen des Bondpads ist auf der Chipoberfläche eine Passivierungsschicht PS aufgebracht und so strukturiert, dass ein Bereich des Bondpads freiliegt. Üblicherweise überlappen dabei die Ränder der Passivierungsschicht das Bondpad. Im Reverse SSB-Verfahren wird daher als Abstandshalter wie bereits beschrieben zunächst eine Stud-Bump SB aufgebondet, auf den im Reverse SSB Verfahren anschließend ein Wedge aufgesetzt werden kann. Dabei drückt das Bondwerkzeug, von dem hier nur die den Bonddraht führende Kapillare K dargestellt ist, den Bonddraht BD auf den Stud-Bump SB, bondet ihn dort fest und reißt bzw. quetscht ihn anschließend ab.After the bonding pad has been produced, a passivation layer PS is applied to the chip surface and structured in such a way that a region of the bond pad is exposed. Usually, the edges of the passivation layer overlap the bonding pad. In the reverse SSB method, as a spacer, as previously described, a Stud-Bump SB is then bonded onto which a wedge can subsequently be placed in the reverse SSB method. The bonding tool, from the here only the bonding wire leading capillary K is shown, the bonding wire BD on the Stud Bump SB, it binds him there firmly and then tears or squeezes him off.
Figur 3B zeigt eine neue Ausgestaltung des Bondpads, bei der zunächst eine Grundmetallisierung für das Bondpad auf der Substratoberfläche SU erzeugt wird. Anschließend wird die Passivierung erzeugt und gegebenenfalls strukturiert. Erst nach dem Herstellen der Passivierung PS wird über dem Bondpad eine VerstärkungsSchicht VS aufgebracht, beispielsweise durch galvanisches Aufwachsen einer entsprechenden Metallschicht. Dies führt dazu, dass die Ränder der Verstärkungsschicht über die Ränder der Passivierungsschicht aufwachsen und diese schließlich sogar überlappen können. Insgesamt wird die Verstärkungsschicht in einer solchen Höhe aufgebracht, dass sie über der Oberkante der Passivierungsschicht übersteht. Dieser Überstand ersetzt den Stud Bump des herkömmlichen Reverse SSB Verfahrens . Eine derart über der Oberfläche der Passivierungsschicht erhabene Bondpad-Oberflache ermöglicht ein problemloses direktes Wedgebonden eines Bonddrahtendes im reverse Ball-Stitch Verfahren auf der Oberfläche der Verstärkerschicht, ohne dabei die Passivierungsschicht PS mit der Kapillare K zu beschädigen.FIG. 3B shows a novel embodiment of the bondpad, in which initially a base metallization for the bondpad is produced on the substrate surface SU. Subsequently, the passivation is generated and optionally structured. Only after the passivation PS has been produced is a reinforcing layer VS applied over the bonding pad, for example by galvanic growth of a corresponding metal layer. This causes the edges of the reinforcing layer to grow over the edges of the passivation layer and eventually even overlap. Overall, the reinforcing layer is applied at a height such that it protrudes above the upper edge of the passivation layer. This supernatant replaces the stud bump of the conventional reverse SSB method. Such a bonding pad surface raised above the surface of the passivation layer allows a problem-free direct bonding of a bonding wire end in the reverse ball-stitch method on the surface of the amplifier layer, without damaging the passivation layer PS with the capillary K.
Figur 4 zeigt im schematischen Querschnitt, wie ein derart wedgegebondetes Drahtende noch mit einem Stud-Bump SB zusätzlich befestigt wird, der direkt über dem abgerissenen Drahtende auf das Bondpad BP aufgebondet wird.FIG. 4 shows, in a schematic cross-section, how such a wire-bonded wire end is additionally fastened with a stud-bump SB, which is bonded directly onto the bond pad BP above the torn-off wire end.
Die nur anhand weniger Ausführungsbeispiele dargestellte und erläuterte Erfindung ist nicht auf die Ausführungsbeispiele beschränkt. Variationsmöglichkeiten ergeben sich insbesondere in Art und Anzahl der auf dem Substrat aufzubringenden Bau- elemente, welche beispielsweise als Bare Dies aufgebracht sind. Diese können ICs oder andere aktive Halbleiterbauelemente darstellen. Der Bare Die kann auch ein piezoelektrischer Chip sein. Der Bauelementchip kann Bauelementstrukturen auf beiden Oberflächen und zusätzlich innerhalb des Chips aufweisen. Auf der aufzuklebenden Seite kann er eine Grundmetallisierung oder einen Massekontakt besitzen. Ein erfindungsgemäßes Modul mit minimierter Modulhöhe verzichtet auf SMD-Bauelemente.The invention illustrated and explained only with reference to a few embodiments is not limited to the embodiments. Variation possibilities arise, in particular, in the type and number of components to be applied to the substrate. elements, which are applied as Bare Dies, for example. These may represent ICs or other active semiconductor devices. The bare Die can also be a piezoelectric chip. The device chip may have device structures on both surfaces and additionally within the chip. On the side to be stuck, it may have a base metallization or a ground contact. An inventive module with minimized module height dispenses with SMD components.
Die Erfindung ist aber nicht auf Module ohne SMD-Bauelemente beschränkt. Die auf dem Substrat angeordneten Bauelemente und Bauelementchips können unterschiedliche Bauhöhen aufweisen, dementsprechend kann auch die Glob Top Abdeckung gestuft so ausgeführt werden, dass sämtliche Bauelemente gerade eben vom Glob Top oder einer MoId (mittels Injection Molding) abgedeckt werden.The invention is not limited to modules without SMD components. The arranged on the substrate components and device chips can have different heights, accordingly, the Glob Top cover can be designed in such a stepped manner that all components are just just covered by Glob Top or MoId (by injection molding).
Die Erfindung ist auch nicht auf Substrate aus LTCC be- schränkt. Möglich sind auch PolymerSubstrate, die allerdings gegenüber der LTCC ein thermisches Ausdehnungsverhalten aufwiesen, welches schlechter an das Ausdehnungsverhalten von üblichen Bauelementchips und insbesondere von Halbleitern angepasst ist. Ein erfindungsgemäßes Modul kann auch ohne Glob Top Abdeckung realisiert werden, wobei dann zum Schutz der Bonddrahtverbindungen allerdings eine andere Art der Abdeckung erforderlich ist beispielsweise eine Kappe oder ähnliches . The invention is also not limited to substrates from LTCC. Also possible are polymer substrates which, however, exhibited a thermal expansion behavior relative to the LTCC, which is less adapted to the expansion behavior of conventional device chips and in particular of semiconductors. An inventive module can also be realized without Glob top cover, in which case, however, a different type of cover is required for protecting the bonding wire connections, for example a cap or the like.

Claims

Patentansprüche claims
1. Modul für elektrische Bauelemente,1. module for electrical components,
- mit einem mehrschichtigen Substrat (SU) , in das eine Verdrahtung integriert ist, und auf dem bondbare Anschlussflächen (AF) vorgesehen sind, mit zumindest einem oben auf das Substrat aufgeklebten Bauelementchip (BC) , der auf seiner nach oben weisenden Oberfläche Bondpads (BP) aufweist - bei dem der Bauelementchip über Bonddrähte (BD) mit dem Substrat kontaktiert ist, bei dem die Bonddrähte je mit einem Ball auf eine Anschlussfläche und mit dem Wedge direkt auf eines der Bondpads gebondet sind.- With a multilayer substrate (SU), in which a wiring is integrated, and are provided on the bondable pads (AF), with at least one on top of the substrate adhered component chip (BC), on its upwardly facing surface bonding pads (BP ) - in which the component chip via bonding wires (BD) is contacted with the substrate, wherein the bonding wires are each bonded with a ball on a pad and with the wedge directly on one of the bond pads.
2. Modul nach Anspruch 1 , bei dem die Bonddrähte (BD) als flache der Oberfläche des Bauelementchips (BC) folgende Schlaufen geformt sind.2. Module according to claim 1, wherein the bonding wires (BD) are formed as flat the surface of the component chip (BC) following loops.
3. Modul nach Anspruch 1 oder 2, bei dem die Substratoberfläche bis über die Höhe der Schlaufen der Bonddrähte (BD) mit einem Glob Top (GT) abgedeckt ist.3. Module according to claim 1 or 2, wherein the substrate surface is covered over the height of the loops of the bonding wires (BD) with a Glob Top (GT).
4. Modul nach einem der Ansprüche 1 - 3, bei dem auf das Wedge gebondete Drahtende und das Bondpad (BP) ein Stitch gebondet ist.4. Module according to one of claims 1 - 3, wherein the wedge-bonded wire end and the bonding pad (BP) is a stitch bonded.
5. Modul nach einem der Ansprüche 1 - 4 , bei dem das Bondpad (BP) eine auf dem Bauelementchip (BC) aufsitzende Grundmetallisierung aufweist, bei dem der Bauelementchip und die seitlichen Ränder der Bondpads (BP) mit einer Passivierungsschicht abgedeckt sind, bei dem auf der Grundmetallisierung der Bondpads eine bondbare VerstärkungsSchicht aufgebracht ist, die die Fuge zwischen PassivierungsSchicht und Grundmetallisierung abdeckt .5. Module according to one of claims 1 - 4, wherein the bonding pad (BP) has a base metallization mounted on the component chip (BC), in which the component chip and the lateral edges of the bond pads (BP) are covered with a passivation layer. in which a bondable reinforcing layer is applied to the base metallization of the bond pads, covering the joint between the passivation layer and the base metallization.
6. Modul nach Anspruch 5 , bei dem die Verstärkungsschicht die PassivierungsSchicht (PS) in der Höhe über dem Bauelementchip (BC) überragt.6. The module of claim 5, wherein the reinforcing layer overhangs the passivation layer (PS) in height above the device chip (BC).
7. Modul nach einem der Ansprüche 1 - 6, bei dem die VerstärkungsSchicht die seitlichen Ränder der Passivierungsschicht (PS) überlappt.7. Module according to one of claims 1-6, wherein the reinforcing layer overlaps the lateral edges of the passivation layer (PS).
8. Modul nach einem der Ansprüche 1 - 7 , bei dem der BauelementChip (BC) auf seiner aufgeklebten8. Module according to one of claims 1-7, wherein the device chip (BC) glued on its
Rückseite abgeschliffen ist und eine maximale Dicke von 200μm aufweist .Back ground and has a maximum thickness of 200μm.
9. Modul nach einem der Ansprüche 1 - 8 , bei dem die Verstärkungsschicht eine Cu Schicht und als Oberflächenschicht eine Au Schicht umfasst.A module according to any one of claims 1-8, wherein the reinforcing layer comprises a Cu layer and a surface layer comprises an Au layer.
10. Modul nach einem der Ansprüche 1 - 9, bei dem auf dem Substrat (SU) zumindest ein Widerstand in Form einer gedruckten Leiterbahn aus einer Widerstandspaste aufgebracht ist.10. Module according to one of claims 1 - 9, wherein on the substrate (SU) at least one resistor in the form of a printed conductor made of a resistor paste is applied.
11. Modul nach einem der Ansprüche 1 - 10, bei dem das Substrat (SU) aus einem FR4 Material oder aus einer LTTC Keramik gefertigt ist.11. Module according to one of claims 1 - 10, wherein the substrate (SU) is made of a FR4 material or an LTTC ceramic.
12. Modul nach einem der Ansprüche 1 - 11, bei dem die Bonddrähte als metallische Bändchen ausgebildet sind.12. Module according to one of claims 1 - 11, in which the bonding wires are formed as metallic ribbons.
13. Verfahren zum Bestücken eines Moduls,13. Method for populating a module
- bei dem ein Substrat (SU) mit Anschlussflächen- In which a substrate (SU) with pads
(AF) und ein Bauelementchip (BC) mit Bondpads (BP) auf seiner Vorderseite vorgesehen werden, bei dem der Bauelementchip auf das Substrat aufgeklebt wird, bei dem ein Bonddraht (BD) mit einem Ball auf eine der Anschlussflächen aufgebondet wird,(AF) and a device chip (BC) with bonding pads (BP) are provided on its front, in which the device chip is adhered to the substrate, in which a bonding wire (BD) is bonded with a ball on one of the pads,
- bei dem das andere Ende des Bonddrahts mit seinem Wedge direkt auf das Bondpad (BP) gebondet wird.- In which the other end of the bonding wire is bonded with its wedge directly on the bond pad (BP).
14. Verfahren nach Anspruch 13, bei dem über das gebondete Wedge ein Stud-Bump (SB) aufgebondet wird.14. The method of claim 13, wherein the bonded wedge a Stud bump (SB) is bonded.
15. Verfahren nach Anspruch 13 oder 14, bei dem der Bonddraht (BD) zu einer flachen Schlaufe geformt wird, die über dem Bauelementchip (BC) dessen Oberfläche folgt und die erst neben dem Bauelementchip nach unten zum Substrat (SU) hin gebogen wird.15. The method of claim 13 or 14, wherein the bonding wire (BD) is formed into a flat loop that follows the device chip (BC) whose surface and which is bent next to the device chip down to the substrate (SU).
16. Verfahren nach einem der Ansprüche 13 - 15, bei dem nach der Herstellung der Drahtbondverbindung über das Substrat (SU) und die Oberseite des Bauelementchips (BC) eine Glob Top Masse (GT) oder Mold-Masse bis zu einer solchen Höhe aufgebracht wird, dass die Bonddrähte (BD) vollständig abgedeckt sind. 16. The method according to any one of claims 13 - 15, wherein after the production of the Drahtbondverbindung on the substrate (SU) and the top of the device chip (BC) a Glob Top mass (GT) or mold mass is applied to such a height in that the bonding wires (BD) are completely covered.
EP07785583A 2006-07-18 2007-06-29 Module having a flat structure, and equipment method Withdrawn EP2041783A2 (en)

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