EP1992942A4 - Quantitative evaluation device and method of atom vacancy existing in silicon wafer - Google Patents

Quantitative evaluation device and method of atom vacancy existing in silicon wafer

Info

Publication number
EP1992942A4
EP1992942A4 EP07738100.2A EP07738100A EP1992942A4 EP 1992942 A4 EP1992942 A4 EP 1992942A4 EP 07738100 A EP07738100 A EP 07738100A EP 1992942 A4 EP1992942 A4 EP 1992942A4
Authority
EP
European Patent Office
Prior art keywords
silicon wafer
evaluation device
quantitative evaluation
atom vacancy
vacancy existing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07738100.2A
Other languages
German (de)
French (fr)
Other versions
EP1992942A1 (en
EP1992942B1 (en
Inventor
Terutaka Goto
Yuichi Nemoto
Hiroshi Kaneta
Masataka Hourai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Niigata University NUC
Original Assignee
Sumco Corp
Niigata University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp, Niigata University NUC filed Critical Sumco Corp
Publication of EP1992942A1 publication Critical patent/EP1992942A1/en
Publication of EP1992942A4 publication Critical patent/EP1992942A4/en
Application granted granted Critical
Publication of EP1992942B1 publication Critical patent/EP1992942B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/07—Analysing solids by measuring propagation velocity or propagation time of acoustic waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G01N29/041—Analysing solids on the surface of the material, e.g. using Lamb, Rayleigh or shear waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/24—Probes
    • G01N29/2437—Piezoelectric probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/34—Generating the ultrasonic, sonic or infrasonic waves, e.g. electronic circuits specially adapted therefor
    • G01N29/341—Generating the ultrasonic, sonic or infrasonic waves, e.g. electronic circuits specially adapted therefor with time characteristics
    • G01N29/343—Generating the ultrasonic, sonic or infrasonic waves, e.g. electronic circuits specially adapted therefor with time characteristics pulse waves, e.g. particular sequence of pulses, bursts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/028—Material parameters
    • G01N2291/02881—Temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/26—Scanned objects
    • G01N2291/269—Various geometry objects
    • G01N2291/2698—Other discrete objects, e.g. bricks

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
EP07738100.2A 2006-03-03 2007-03-02 Quantitative evaluation device and method of atom vacancy existing in silicon wafer Active EP1992942B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006058560 2006-03-03
PCT/JP2007/054615 WO2007100155A1 (en) 2006-03-03 2007-03-02 Quantitative evaluation device and method of atom vacancy existing in silicon wafer

Publications (3)

Publication Number Publication Date
EP1992942A1 EP1992942A1 (en) 2008-11-19
EP1992942A4 true EP1992942A4 (en) 2016-11-02
EP1992942B1 EP1992942B1 (en) 2017-12-13

Family

ID=38459240

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07738100.2A Active EP1992942B1 (en) 2006-03-03 2007-03-02 Quantitative evaluation device and method of atom vacancy existing in silicon wafer

Country Status (5)

Country Link
US (1) US8037761B2 (en)
EP (1) EP1992942B1 (en)
KR (2) KR101048637B1 (en)
CN (1) CN101432622B (en)
WO (1) WO2007100155A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5276347B2 (en) * 2007-07-03 2013-08-28 国立大学法人 新潟大学 Quantitative evaluation apparatus for atomic vacancy existing in silicon wafer, method thereof, method for manufacturing silicon wafer, and thin film vibrator
US8578777B2 (en) 2009-09-07 2013-11-12 Niigata Univerasity Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon wafer
JP6036670B2 (en) * 2013-12-10 2016-11-30 信越半導体株式会社 Defect concentration evaluation method for silicon single crystal substrate
CN109656286B (en) * 2018-12-10 2021-07-30 湖南航天天麓新材料检测有限责任公司 Macromolecular crystallization space material experimental device and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350942A (en) * 1964-09-15 1967-11-07 Alnor Instr Ultrasonic pyrometer
JPH0198960A (en) 1987-10-13 1989-04-17 Fujitsu Ltd Measuring element for sound velocity in silicon and its manufacture
JPH07174742A (en) 1993-12-20 1995-07-14 Fujitsu Ltd Method for measuring crystal defect
JP3357227B2 (en) 1995-07-21 2002-12-16 日立建機株式会社 Piezoelectric element and method of manufacturing the same
JPH1126390A (en) * 1997-07-07 1999-01-29 Kobe Steel Ltd Method for preventing generation of defect
US6236104B1 (en) * 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
CN1349655A (en) * 1999-04-27 2002-05-15 德克尔兄弟两合公司 Device for treating silicon wafers
US6532977B2 (en) * 2000-03-16 2003-03-18 Bridgestone Corporation Cleaning vessel and silicon carbide sintered body used therefor
JP2002246342A (en) * 2001-02-20 2002-08-30 Nec Yamaguchi Ltd Polishing device
EP1423871A2 (en) * 2001-06-22 2004-06-02 MEMC Electronic Materials, Inc. Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
JP2005037153A (en) 2003-07-15 2005-02-10 Seiko Epson Corp Estimation method for thin film
JP4255818B2 (en) * 2003-12-11 2009-04-15 アルプス電気株式会社 Ultrasonic cleaning nozzle and ultrasonic cleaning device
CN101437988A (en) * 2006-03-03 2009-05-20 国立大学法人新潟大学 Method for manufacturing Si single crystal ingot by CZ method
JP5276347B2 (en) * 2007-07-03 2013-08-28 国立大学法人 新潟大学 Quantitative evaluation apparatus for atomic vacancy existing in silicon wafer, method thereof, method for manufacturing silicon wafer, and thin film vibrator
US8771415B2 (en) * 2008-10-27 2014-07-08 Sumco Corporation Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *
See also references of WO2007100155A1 *

Also Published As

Publication number Publication date
CN101432622B (en) 2013-05-29
EP1992942A1 (en) 2008-11-19
KR20110042391A (en) 2011-04-26
US8037761B2 (en) 2011-10-18
CN101432622A (en) 2009-05-13
EP1992942B1 (en) 2017-12-13
KR101048637B1 (en) 2011-07-12
US20090064786A1 (en) 2009-03-12
WO2007100155A1 (en) 2007-09-07
KR20080109746A (en) 2008-12-17

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