EP1987543A1 - Method for producing a metal contact structure of a solar cell - Google Patents
Method for producing a metal contact structure of a solar cellInfo
- Publication number
- EP1987543A1 EP1987543A1 EP07703023A EP07703023A EP1987543A1 EP 1987543 A1 EP1987543 A1 EP 1987543A1 EP 07703023 A EP07703023 A EP 07703023A EP 07703023 A EP07703023 A EP 07703023A EP 1987543 A1 EP1987543 A1 EP 1987543A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- solar cell
- contact structure
- metal
- producing
- containing ink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002184 metal Substances 0.000 title claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 49
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 3
- 238000007639 printing Methods 0.000 claims description 29
- 238000007650 screen-printing Methods 0.000 claims description 19
- 239000000443 aerosol Substances 0.000 claims description 18
- 230000002787 reinforcement Effects 0.000 claims description 16
- 238000007641 inkjet printing Methods 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002923 metal particle Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 99
- 239000000976 ink Substances 0.000 description 28
- 230000008901 benefit Effects 0.000 description 6
- 238000011835 investigation Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000001856 aerosol method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 206010010774 Constipation Diseases 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a method for producing a metallic contact structure of a solar cell.
- a solar cell is a planar semiconductor element, in which a charge carrier separation is generated by means of incident electromagnetic radiation, so that a potential is created between at least two contacts of the solar cell and electrical power can be tapped from the solar cell via an external circuit connected to these contacts.
- the charge carriers are collected via metallic contact structures, so that by contacting these contact structures at one or more contact points, the charge carriers can be fed into the external circuit.
- grid-like metallic contact structures are typically applied to a surface of the solar cell, which overlap the surface of the solar cell finger-like, so that the charge carriers from all areas of the solar cell enter the contact structure and flow in the contact structure to the contact point and from there into the external circuit ,
- the metallic contact structure on the one hand must have a low contact resistance to the contacted semiconductor region of the solar cell and on the other hand, the line resistance of the contact structure must be low.
- the contact structure serves to make contact with the front side of the solar cell, through which the illumination of the solar cell also takes place, the contact structure must furthermore cover the smallest possible surface area of the front side of the solar cell in order to minimize shading losses.
- Known for the production of such contact structures is the complete application of the entire contact grid in one step by screen printing a silver-containing paste. However, this creates wide contact fingers with limited conductivity and high electrical contact resistance to the semiconductor.
- the present invention is therefore based on the object to propose a method for producing a contact structure of a solar cell, which is inexpensive and quick to carry out and on the other hand reduces the above-mentioned loss possibilities to a minimum.
- the inventive method thus differs fundamentally from the prior art in that first the metallic contact structure is generated by a metal-containing ink, which by means of at least one
- Pressure nozzle is applied to the surface of the solar cell and then a reinforcement of the metallic contact structure is made in an electrolytic bath.
- the amplification can be carried out as known electroless amplification by exploiting different chemical potentials or in that in the electrolytic bath electrically a potential difference between a metal electrode and the metallic
- the contact structure is formed by applying the metal-containing ink through a pressure nozzle, which is moved relative to the solar cell surface and substantially parallel to this.
- the inventive method can be used for different solar cell sizes by the movement pattern of the printing nozzle is adjusted relative to the solar cell surface of the solar cell size.
- Another advantage of the method according to the invention is that in the application of the metal-containing ink, the solar cell is subjected to only a small pressure compared to the conventional one
- the metal-containing ink is applied to the solar cell by means of an inkjet printing process.
- Essential to this embodiment of the method according to the invention is that the already developed inkjet printing method is used and combined with the reinforcement of the contact structure in an electrolytic bath, so that on the one hand on the cost and with respect to the design of the metallic contact structure flexible inkjet technology can be used and on the other hand the benefits of reinforcement in an electrolytic bath are utilized.
- the metallic contact structure is applied to the solar cell by means of an aerosol printing process.
- a metal-containing ink is applied by means of at least one pressure nozzle on the surface of the solar cell.
- the aerosol process initially produces an aerosol of the printing ink.
- This aerosol is directed by means of a pressure nozzle to the solar cell, wherein the pressure nozzle is attached to a printhead by means of a focusing gas, the aerosol is bundled and fed in focused form of the pressure nozzle.
- a metal in each step.
- a first metal can be contained in the metal-containing ink and thus form the metallic contact structure on the surface of the solar cell.
- a second metal can be chosen for reinforcement in the electrolytic bath, for example for the metal electrode in the galvanic reinforcement, so that the reinforcement takes place by means of this second metal.
- the metal of the metal-containing ink which is applied in the first step is selected as a metallic contact structure in such a way that a low electrical contact resistance and a high mechanical adhesion to the surface of the solar cell arise.
- Typical silicon solar cells have an n-doped region on the side at which the metallic contact structure is to be applied.
- the specific contact resistance between contact structure and n-doped region should advantageously be less than 1 ⁇ 10 -3 ⁇ cm 2 .
- nickel is suitable as the metal content of the ink because low specific contact resistances are obtained by nickel.
- Nickel points In addition, a high adhesion to the silicon surface, so that a later tearing of the contact structure can be avoided.
- the use of metals with a specific line resistance ⁇ 3 ⁇ 10 -8 ⁇ m is advantageous in order to avoid negative losses due to the line resistance of the contact grid.
- the use of silver or copper is advantageous because these metals have a low resistivity.
- metal-containing ink For the process according to the invention can advantageously be used as metal-containing ink is a known silver screen printing paste which is so diluted with solvents that it has approximately 60 wg% silver particles with a size of 1 micron to 5 microns.
- the use of such a thinned screen printing paste has the advantage that such pastes are widely used in screen printing processes and therefore already extensively researched and commercially available and the additional dilution reduces the risk of clogging of the printing nozzle.
- the size of the metal particles present as nanoparticles being between 20 nm and 1000 nm.
- the weight fraction of the metal particles and the paste is usefully in the range of 10% by weight to 20% by weight. Applicant's investigations have shown that with such an ink it is possible to print very fine lines with a width of less than 10 ⁇ m due to the small particle size, in particular in connection with the aerosol printing process.
- this printing ink is also suitable for the use of the inkjet printing process, since due to the smaller particle size there is a lower risk of clogging of the printing nozzle.
- a metal-containing ink for the process according to the invention, in which the metal is present in dissolved form, that is to say ionically.
- Such inks are also called organometallic inks.
- the metal content of these inks is about 20 wg%.
- the surface of a solar cell, to which a metallic contacting structure is to be applied usually has a dielectric layer which has arisen due to oxidation of the surface or which has been deliberately applied to improve the reflection property of the surface and thus an increased proportion of the Solar cell incident light to couple into the solar cell.
- the contact structure For a functional contacting, the contact structure must contact the underlying region of the solar cell through the dielectric layer.
- the dielectric layer on the surface of the solar cell, to which the contact structure is to be applied is removed by means of a laser prior to application of the metal-containing ink.
- the dielectric layer is removed only in the areas in which a contact between the metallic contact structure and the solar cell is to take place.
- the laser or at least the exit opening of the laser is connected in a stationary manner to the pressure nozzle.
- laser and pressure nozzle can be adjusted so that during the relative movement of the solar cell and the pressure nozzle first by means of the laser, the dielectric layer is removed and immediately followed by the application of the metallic contact structure by means of the pressure nozzle.
- no adjustment between the steps of removing the dielectric layer and applying the metallic contact structure is necessary, but rather the dielectric layer is removed in the same process step by also applying the metal-containing ink.
- the solar cell is heated to a temperature between 100 ° C. and 900 ° C. for a period between one second and thirty minutes ,
- Heating the solar cell prior to amplifying in the electrolytic bath has the advantage that solvents contained in the ink evaporate before immersing the solar cell in the electrolytic bath.
- the step of temperature treatment and thus the Einsinterung can also be performed with a tracking laser beam directly after the application of the metal layer.
- the inventive method is applied to apply a metallic contact structure on the front side of a solar cell.
- the back of the solar cell is typically provided with a full-surface metallization, which represents the back contact of the solar cell.
- the solar cell is placed in the galvanic bath and irradiated with light, so that a potential difference between the front and back of the solar cell is generated.
- the potential of the metal electrode can now be selected such that a potential difference between the metal electrode and the front side of the solar cell and thus the metallic contact structure applied by means of the printing process results, so that the metallic contact structure is reinforced in the electrolytic bath.
- the back side of the solar cell is contacted during the galvanic reinforcement.
- the solar cell is illuminated during galvanic amplification, so that a Potential difference between the front and back contact exists.
- the potential difference is now chosen such that no resolution of the back side metallization of the solar cell takes place in the electrolytic bath. In this way it is achieved that the galvanic reinforcement only affects the front side contact of the solar cell and that only the metal electrode dissolves in the electrolytic bath, but not the back contact of the solar cell.
- Figure 1 shows the process step of the method according to the invention by means of a laser, the dielectric layer of the solar cell is opened and by means of aerosol printing a metal-containing printing ink on the
- FIG. 2 shows the subsequent process step of the invention
- the printhead 1 shows a printhead 1 with a pressure nozzle 1 a, which serves for applying an aerosol 2 to the surface 5 of a solar cell.
- the printhead 1 has inlets 3a and 3b into which focusing gas is introduced, so that the aerosol 2 is focused by a ring flow of the focusing gases so that it exits from the pressure nozzle 1 a, without touching the pressure nozzle.
- a light guide 4 which is connected to a laser (not shown). Via the light guide 4, the surface 5 of the solar cell is exposed to laser radiation, so that the dielectric layer is removed on the surface of the solar cell in the applied areas by evaporation. Pressure nozzle 1 a and light guide 4 are adjusted such that upon movement of the solar cell according to direction A, the aerosol is applied in the open by means of laser radiation region of the dielectric layer on the surface 5 of the solar cell.
- the aerosol 2 is produced from a screen printing paste which has approximately 60% by weight of nickel particles with a diameter of 1 to 5 ⁇ m.
- the screen printing paste from which the aerosol 2 is obtained contains no glass frit, because a through-etching through the dielectric layer is not necessary.
- the remaining 100% by weight missing parts by weight of screen printing paste consist of binders and solvents.
- the printing takes place under normal atmosphere at room temperature.
- the relative movement between the surface 5 of the solar cell and the print head 1 with the pressure nozzle 1 a and the light guide 4 is achieved in that the solar cell is mounted on an XY table, which perpendicular to the jet direction of the pressure nozzle (ie to the right in FIG and left and into the picture plane and out of it). Subsequently, a temperature step at about 400 0 C to perform the contact formation of the applied metal paste to the semiconductor.
- a metallic contact structure which has a small line width is thus applied to the surface 5 by means of the aerosol.
- nickel was chosen as the metal for the metal particles, so that the contact structure applied by the aerosol printing on the one hand has a low contact resistance with the n-type doping of the silicon solar cell located on the surface 5 on the solar cell and, moreover, good adhesion between the contact structure and the surface 5 of the solar cell is given.
- the solar cell is placed in an electrolytic bath for galvanic reinforcement, as shown in Figure 2.
- a container 6a is an electrolytic bath 6, in which a silver electrode 7 and the solar cell 8 - whose surface 5 has the previously applied metallic contact structure - are immersed.
- the bottom of the drawing in the drawing back contact of the solar cell is connected to the negative contact of a voltage source whose positive contact is connected to the silver electrode 7.
- a light source 9 acts on the front side of the solar cell 8 with light, so that a potential is formed between the front side contact lying in the drawing above with the contact structure applied by means of aerosol printing and the rear side contact.
- the potential ratio between silver electrode 7, front side contact and back contact of the solar cell 8 is now selected such that silver ions from the silver electrode 7 through the electrolytic bath 6 attach to the contact structure on the front side 5 of the solar cell 8, so that it is galvanically reinforced.
- the potential of the rear side of the solar cell 8 is selected such that no metal ions pass into the electrolytic bath from the rear side of the solar cell, so that the rear-side contact of the solar cell 8 does not dissolve.
- the potential of the front of the solar cell is lower than the potential of the back of the solar cell and this in turn less than the potential of the electrode.
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006003607A DE102006003607A1 (en) | 2006-01-25 | 2006-01-25 | Method for localized doping of solid substrates, e.g. silicon substrates, comprises spraying surface of substrate with stream of liquid containing dopant, surface being treated locally before or during spraying with laser beam |
DE200610030822 DE102006030822A1 (en) | 2006-06-30 | 2006-06-30 | Metal for fabricating metal contact structure of solar cell, involves strengthening metallic contact structure in electrolytic bath |
PCT/EP2007/000630 WO2007085448A1 (en) | 2006-01-25 | 2007-01-25 | Method for producing a metal contact structure of a solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1987543A1 true EP1987543A1 (en) | 2008-11-05 |
Family
ID=38093519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07703023A Withdrawn EP1987543A1 (en) | 2006-01-25 | 2007-01-25 | Method for producing a metal contact structure of a solar cell |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090238994A1 (en) |
EP (1) | EP1987543A1 (en) |
JP (1) | JP2009524920A (en) |
KR (1) | KR20080091241A (en) |
WO (1) | WO2007085448A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009048983A2 (en) * | 2007-10-09 | 2009-04-16 | Nanomas Technologies, Inc. | Conductive nanoparticle inks and pastes and applications using the same |
DE102008032554A1 (en) | 2008-07-10 | 2010-01-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Metal-containing composition, process for the production of electrical contact structures on electronic components and electronic component |
KR100993511B1 (en) | 2008-11-19 | 2010-11-12 | 엘지전자 주식회사 | Solar cell and manufacturing method of the same |
KR100913208B1 (en) * | 2009-03-09 | 2009-08-24 | 주식회사 아론 | Bonding device for ribbon on solar cell module |
KR101084171B1 (en) * | 2009-08-10 | 2011-11-17 | 삼성모바일디스플레이주식회사 | Organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus |
KR101658532B1 (en) * | 2009-10-30 | 2016-09-23 | 엘지디스플레이 주식회사 | Method of fabricating color filter using surface plasmon and method of fabricating liquid crystal display device |
KR101113503B1 (en) * | 2009-10-30 | 2012-02-29 | 고려대학교 산학협력단 | Method for fabricating silicon solar cell using induced current apparatus |
DE102010028189B4 (en) * | 2010-04-26 | 2018-09-27 | Solarworld Industries Gmbh | solar cell |
EP2442367B1 (en) | 2010-10-14 | 2014-07-16 | Rohm and Haas Electronic Materials LLC | Improved method for forming metal contacts |
KR101305119B1 (en) | 2010-11-05 | 2013-09-12 | 현대자동차주식회사 | Oxide semiconductor ink For Ink-Jet Printing and manufacturing method thereof, manufacturing method of photovoltaics using thereof |
KR101271629B1 (en) * | 2011-03-23 | 2013-06-11 | 주식회사 신성에프에이 | Apparatus for patterning electrode of solar cell and method therefor |
KR101271528B1 (en) * | 2011-03-23 | 2013-06-05 | 주식회사 신성에프에이 | Apparatus for patterning electrode of solar cell and method therefor |
DE102011102166A1 (en) | 2011-05-20 | 2012-11-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for homogenizing the laser beam profile in processes using a liquid jet laser and corresponding device |
DE102011056632A1 (en) | 2011-12-19 | 2013-06-20 | Schott Solar Ag | Method for forming a front side metallization of a solar cell and solar cell |
JP6082187B2 (en) * | 2012-04-06 | 2017-02-15 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Improved method of forming metal contacts |
EP3124165B1 (en) * | 2015-07-28 | 2020-06-17 | Synova S.A. | Process of treating a workpiece using a liquid jet guided laser beam |
DE102019206706A1 (en) * | 2019-05-09 | 2020-11-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device and method for applying liquid media to a substrate surface |
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US4082568A (en) * | 1977-05-10 | 1978-04-04 | Joseph Lindmayer | Solar cell with multiple-metal contacts |
US4668533A (en) | 1985-05-10 | 1987-05-26 | E. I. Du Pont De Nemours And Company | Ink jet printing of printed circuit boards |
GB2188774B (en) * | 1986-04-02 | 1990-10-31 | Westinghouse Electric Corp | Method of forming a conductive pattern on a semiconductor surface |
CA2024662A1 (en) * | 1989-09-08 | 1991-03-09 | Robert Oswald | Monolithic series and parallel connected photovoltaic module |
JPH0563218A (en) * | 1991-08-30 | 1993-03-12 | Canon Inc | Solar battery and manufacture thereof |
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JP3115950B2 (en) * | 1992-07-29 | 2000-12-11 | シャープ株式会社 | Photoelectric conversion device and method of manufacturing the same |
JPH06204532A (en) * | 1992-12-28 | 1994-07-22 | Canon Inc | Manufacture of grid electrode of solar cell |
US5584941A (en) * | 1994-03-22 | 1996-12-17 | Canon Kabushiki Kaisha | Solar cell and production process therefor |
EP1223615A1 (en) * | 2001-01-10 | 2002-07-17 | Eidgenössische Technische Hochschule Zürich | A method for producing a structure using nanoparticles |
JP2002305311A (en) * | 2001-01-31 | 2002-10-18 | Shin Etsu Handotai Co Ltd | Method of manufacturing solar battery and solar battery |
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JP2003297158A (en) * | 2002-04-01 | 2003-10-17 | Canon Inc | Transparent conductive film having grid electrode and its manufacturing method |
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JP4387091B2 (en) * | 2002-11-05 | 2009-12-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor |
JP2004281813A (en) * | 2003-03-17 | 2004-10-07 | Ebara Corp | Manufacturing method for solar cell |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
JP4121928B2 (en) * | 2003-10-08 | 2008-07-23 | シャープ株式会社 | Manufacturing method of solar cell |
WO2005083730A1 (en) * | 2004-02-19 | 2005-09-09 | Konarka Technologies, Inc. | Photovoltaic cell with spacers |
JP2005353691A (en) * | 2004-06-08 | 2005-12-22 | Sharp Corp | Electrode and solar cell, and manufacturing method thereof |
DE102004034435B4 (en) * | 2004-07-16 | 2007-03-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Semiconductor device having an arranged on at least one surface electrical contact |
US7469638B2 (en) * | 2004-12-30 | 2008-12-30 | E.I. Du Pont De Nemours And Company | Electronic devices and processes for forming the same |
-
2007
- 2007-01-25 JP JP2008551721A patent/JP2009524920A/en active Pending
- 2007-01-25 EP EP07703023A patent/EP1987543A1/en not_active Withdrawn
- 2007-01-25 US US12/162,062 patent/US20090238994A1/en not_active Abandoned
- 2007-01-25 KR KR1020087020452A patent/KR20080091241A/en not_active Application Discontinuation
- 2007-01-25 WO PCT/EP2007/000630 patent/WO2007085448A1/en active Application Filing
Non-Patent Citations (1)
Title |
---|
See references of WO2007085448A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2009524920A (en) | 2009-07-02 |
KR20080091241A (en) | 2008-10-09 |
WO2007085448A1 (en) | 2007-08-02 |
US20090238994A1 (en) | 2009-09-24 |
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