EP1938451A1 - Device and method for amplifying pulsed rf signals - Google Patents

Device and method for amplifying pulsed rf signals

Info

Publication number
EP1938451A1
EP1938451A1 EP06793081A EP06793081A EP1938451A1 EP 1938451 A1 EP1938451 A1 EP 1938451A1 EP 06793081 A EP06793081 A EP 06793081A EP 06793081 A EP06793081 A EP 06793081A EP 1938451 A1 EP1938451 A1 EP 1938451A1
Authority
EP
European Patent Office
Prior art keywords
drain
transistor
signals
gate
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP06793081A
Other languages
German (de)
French (fr)
Inventor
Alain Letemplier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Publication of EP1938451A1 publication Critical patent/EP1938451A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H03F1/025—Stepped control by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/507—A switch being used for switching on or off a supply or supplying circuit in an IC-block amplifier circuit

Definitions

  • the present invention relates to a device for amplifying pulse signals. It is used in particular to amplify radio frequency signals, RF, pulse modulated.
  • the first solution offers simplicity of implementation and zero consumption in the absence of pulses. However, it has a fairly low gain and an average yield, as well as a deformation of the foot of the pulse due to the pre-polarization.
  • the second solution is more complex to implement but offers a high gain, a respect for the integrity of the impulse. However, it presents a residual consumption between impulses. Its gain varies with the temperature. The efficiency of the stage is reduced by the unnecessary consumption related to the polarization of the transistor.
  • the gate supply voltage is adjusted for a given drain current (bias quiescent current).
  • the energy consumption between the pulses is even higher than one seeks maximum gain.
  • the amplifier stage thus formed does not participate in the decrease of the residual radiation between pulses.
  • the invention relates to a device for amplifying pulsed RF signals comprising one or more transistors each comprising a drain, a gate, a source characterized in that it comprises a device for synchronizing the supply of the drain with an RF pulse.
  • the stage thus constituted adds its input-output isolation to the modulation depth of the incoming modulated RF signal, which contributes to the reduction of the residual radiation between pulses and makes it possible to use a less efficient modulator upstream.
  • FIG. 1 an architecture of an amplification device
  • FIG. 1 represents an example of use of a transistor
  • a source 1 transmits RF radio frequency signals to a modulator 2 whose particular function is to transform the signals into pulses.
  • the impulse RF signals are then transmitted to an amplifier 3 according to the invention.
  • a device 4 serves in particular to control the control signal of the modulation transmitted to the modulator 2 but also to control the opening or closing of the low loss switch of the amplifier 3. It receives the transmission synchronization command modulated signal.
  • FIG. 2 represents a pulse-mode LDMOS transistor in power RF amplification.
  • the gate G of the transistor receives the frequency-modulated signal and is powered by a gate power supply.
  • the drain D is connected to a DC supply by means of a low loss switch.
  • the switch 10 is controlled by means of the sync signal for transmitting the modulated signal (FIG. 1).
  • the drain current is present only when the drain is energized.
  • the value between the peak supply of the drain and the drain source breakdown voltage of the LDMOS transistor provides effective protection against overvoltages inherent to this type of operation.
  • the instantaneous energy required is provided by a tank capacity 14 of high value calculated as a function of the load factor of the transmitter and low resistance in series (technological choice to minimize losses).
  • the low loss switch is made for example from MOSPOWER transistors. It is therefore easily achievable and offers all the qualities of resistance to high peak drain current and low losses.
  • the VG power supply of the grid can be:
  • variable DC voltage gain control for example a variable gain amplifier
  • the gate voltage is controllable in amplitude, adjustment of the quiescent drain current, adjustment of the RF gain of the stage.
  • the method according to the invention consists in particular in controlling the opening and closing of the switch 10 as a function of the transmit synchronization signal of the pulse signal.
  • the supply of the transistor drain depends on the transmitted signal.
  • the supply of the drain is made according to the position of the pulses RF to emit. It is also possible to control the gate voltage of the transistor by applying a variable DC voltage. According to an alternative embodiment, the gate voltage of the transistor is controlled by applying a given modulation signal.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention concerns a device and a method for amplifying pulsed RF signals comprising one or several transistors each including a drain, a gate, a source, characterized in that it includes a device for synchronizing the power of the drain with an RF pulse.

Description

Dispositif et procédé pour amplifier des signaux RF impulsionnels Device and method for amplifying pulsed RF signals
La présente invention concerne un dispositif d'amplification de signaux impulsionnels. Elle est notamment utilisée pour amplifier des signaux radio- fréquences, RF, modulés en impulsion.The present invention relates to a device for amplifying pulse signals. It is used in particular to amplify radio frequency signals, RF, pulse modulated.
Elle s'applique de manière générale dans toutes les chaînes d'émission radio-fréquence RF puisées, par exemple dans le domaine des radars.It is generally applicable in all RF radio frequency transmission channels pulsed, for example in the field of radars.
Les solutions habituellement utilisées pour l'amplification de puissance d'un signal RF impulsionnel utilisent par exemple :The solutions usually used for the amplification of power of a pulse RF signal use for example:
• Des transistors bipolaires classe C, base commune, avec alimentation émetteur en tension continue, • Des transistors LDMOS classe AB, source commune, à alimentation de drain continue et courant de drain contrôlé.• Class C common bipolar transistors, with DC voltage emitter power supply, • Class AB LDMOS transistors, common source, with continuous drain supply and controlled drain current.
La première solution offre une simplicité de mise en œuvre et une consommation nulle en l'absence d'impulsions. Toutefois, elle présente un gain assez faible et un rendement moyen, ainsi qu'une déformation du pied de l'impulsion due à la pré-polarisation.The first solution offers simplicity of implementation and zero consumption in the absence of pulses. However, it has a fairly low gain and an average yield, as well as a deformation of the foot of the pulse due to the pre-polarization.
La deuxième solution est plus complexe à mettre en œuvre mais offre un gain élevé, un respect de l'intégrité de l'impulsion. Elle présente toutefois, une consommation résiduelle entre impulsions. Son gain varie avec la température. Le rendement de l'étage est diminué par la consommation inutile liée à la polarisation du transistor.The second solution is more complex to implement but offers a high gain, a respect for the integrity of the impulse. However, it presents a residual consumption between impulses. Its gain varies with the temperature. The efficiency of the stage is reduced by the unnecessary consumption related to the polarization of the transistor.
Dans l'amplification IFF, la tension d'alimentation de grille est ajustée pour un courant de drain donné (courant de repos de polarisation).In the IFF amplification, the gate supply voltage is adjusted for a given drain current (bias quiescent current).
Elle n'est en outre présente que pendant la période d'émission pour annuler le courant de drain en dehors des périodes d'émission. II est aussi connu des systèmes mettant en œuvre l'asservissement du courant de drain de repos, système de polarisation automatique, tel que celui décrit dans le brevet US 6 573 796. Ce système n'est toutefois utilisable en mode puisé que si les impulsions de courant de drain résultantes sont filtrées par le système de mesure du courant de drain.It is also present only during the emission period to cancel the drain current outside transmission periods. It is also known systems implementing the control of the quiescent drain current, polarization system This system can only be used in pulsed mode if the resulting drain current pulses are filtered by the drain current measurement system.
Les dispositifs de l'art antérieur présentent notamment certains inconvénients.The devices of the prior art have in particular certain disadvantages.
Pour l'ampli IFF (abréviation de identification friend or foe), il y a une consommation résiduelle entre impulsions, le temps de mise en conduction du transistor obtenu avec une commande de tension grille puisée est lente vis à vis du temps d'établissement d'une impulsion carrée (type radar ou IFF). Il faut donc anticiper la commande par rapport à l'impulsion RF à amplifier pour éviter de la déformer, ce qui laisse une durée pendant laquelle le transistor consomme.For the IFF amp (friend or foe identification abbreviation), there is a residual consumption between pulses, the conduction time of the transistor obtained with a pulsed gate voltage control is slow with respect to the set-up time. a square pulse (radar or IFF type). It is therefore necessary to anticipate the command with respect to the RF pulse to be amplified to avoid deforming it, which leaves a duration during which the transistor consumes.
En ce qui concerne le système de polarisation automatique. Il ne peut être utilisé en l'état et présente comme inconvénient d'avoir une consommation résiduelle entre impulsions (courant de repos).Regarding the automatic polarization system. It can not be used as it is and has the disadvantage of having a residual consumption between pulses (quiescent current).
De manière générale, la consommation d'énergie entre les impulsions (échauffement augmenté, rendement diminué) est d'autant plus élevée que l'on cherche un gain maximal.In general, the energy consumption between the pulses (increased heating, decreased efficiency) is even higher than one seeks maximum gain.
L'étage ampli ainsi constitué ne participe pas à la diminution du rayonnement résiduel entre impulsions.The amplifier stage thus formed does not participate in the decrease of the residual radiation between pulses.
L'invention concerne un dispositif d'amplification de signaux RF impulsionnels comprenant un ou plusieurs transistors chacun comprenant un drain, une grille, une source caractérisé en ce qu'il comporte un dispositif pour synchroniser l'alimentation du drain avec une impulsion RF.The invention relates to a device for amplifying pulsed RF signals comprising one or more transistors each comprising a drain, a gate, a source characterized in that it comprises a device for synchronizing the supply of the drain with an RF pulse.
Le dispositif selon l'invention offre notamment les avantages suivants :The device according to the invention notably offers the following advantages:
• La consommation est quasiment nulle entre les impulsions, l'alimentation du drain étant nulle ou quasi-nulle, • Entre les impulsions, l'étage ainsi constitué ajoute son isolation entrée-sortie à la profondeur de modulation du signal RF modulé entrant, ce qui concours à la diminution du rayonnement résiduel entre impulsions et permet d'utiliser en amont un modulateur moins performant,• The consumption is almost zero between the pulses, the supply of the drain being null or quasi-null, Between the pulses, the stage thus constituted adds its input-output isolation to the modulation depth of the incoming modulated RF signal, which contributes to the reduction of the residual radiation between pulses and makes it possible to use a less efficient modulator upstream.
• La consommation sur le drain étant limitée à la stricte durée de l'impulsion RF à amplifier, il n'y a pas de risque à augmenter la tension de grille à sa valeur maximum. On peut donc travailler au maximum du gain sans augmenter inutilement réchauffement du transistor.• Since the consumption on the drain is limited to the strict duration of the RF pulse to be amplified, there is no risk in increasing the gate voltage to its maximum value. We can therefore work at the maximum gain without unnecessarily increasing the heating of the transistor.
D'autres caractéristiques et avantages de l'invention apparaîtront mieux à la lecture de la description qui suit, d'un exemple de réalisation donné à titre illustratif et nullement limitatif, annexée des figures qui représentent :Other features and advantages of the invention will appear better on reading the description which follows, of an exemplary embodiment given by way of illustration and in no way limiting, appended figures which represent:
• La figure 1 une architecture d'un dispositif d'amplification, etFIG. 1 an architecture of an amplification device, and
• La figure 2 un transistor LDMOS en régime impulsionnel en amplification RF de puissance.• Figure 2 a pulse LDMOS transistor in power RF amplification.
La figure 1 représente un exemple d'utilisation d'un transistorFIG. 1 represents an example of use of a transistor
LDMOS en régime impulsionnel.LDMOS in pulse mode.
Une source 1 émet des signaux radio fréquence RF vers un modulateur 2 ayant notamment pour fonction de transformer les signaux en impulsions. Les signaux RF impulsionnels sont ensuite transmis vers un amplificateur 3 selon l'invention. Un dispositif 4 a notamment pour fonction de contrôler le signal de commande de la modulation émise vers le modulateur 2 mais aussi de commander l'ouverture ou la fermeture du commutateur faible perte de l'amplificateur 3. Il reçoit la commande de synchronisation d'émission du signal modulé. La figure 2 représente un transistor LDMOS en régime impulsionnel en amplification RF de puissance.A source 1 transmits RF radio frequency signals to a modulator 2 whose particular function is to transform the signals into pulses. The impulse RF signals are then transmitted to an amplifier 3 according to the invention. A device 4 serves in particular to control the control signal of the modulation transmitted to the modulator 2 but also to control the opening or closing of the low loss switch of the amplifier 3. It receives the transmission synchronization command modulated signal. FIG. 2 represents a pulse-mode LDMOS transistor in power RF amplification.
La grille G du transistor reçoit le signal modulé en fréquence et est alimentée par une alimentation de grille. Le drain D est relié à une alimentation DC au moyen d'un commutateur 10 faible perte. Le commutateur 10 est commandé au moyen du signal de synchronisation sync d'émission du signal modulé (figure 1 ). Le courant de drain n'est présent que lorsque le drain est alimenté. Un écrêteur bi-directionnel rapide de tension,The gate G of the transistor receives the frequency-modulated signal and is powered by a gate power supply. The drain D is connected to a DC supply by means of a low loss switch. The switch 10 is controlled by means of the sync signal for transmitting the modulated signal (FIG. 1). The drain current is present only when the drain is energized. A two-way fast voltage limiter,
12, valeur comprise entre l'alimentation crête du drain et la tension de claquage drain source du transistor LDMOS, offre une protection efficace contre les surtensions inhérentes à ce type de fonctionnement. La capacité12, the value between the peak supply of the drain and the drain source breakdown voltage of the LDMOS transistor, provides effective protection against overvoltages inherent to this type of operation. The capacity
1 1 permet un découplage RF.1 1 allows RF decoupling.
L'énergie instantanée nécessaire est fournie par une capacité réservoir 14 de forte valeur calculée en fonction du taux de charge de l'émetteur et faible résistance en série (choix technologique pour minimiser les pertes).The instantaneous energy required is provided by a tank capacity 14 of high value calculated as a function of the load factor of the transmitter and low resistance in series (technological choice to minimize losses).
Le commutateur faible perte est réalisé par exemple à partir de transistors MOSPOWER. Il est donc facilement réalisable et offre toutes les qualités de tenue au courant de drain crête élevé et de faibles pertes L'alimentation VG de la grille peut être :The low loss switch is made for example from MOSPOWER transistors. It is therefore easily achievable and offers all the qualities of resistance to high peak drain current and low losses. The VG power supply of the grid can be:
• Une tension continue variable de commande de gain, par exemple un ampli à gain variable,A variable DC voltage gain control, for example a variable gain amplifier,
• Un signal de modulation pour un étage utilisé comme un modulateur,• A modulation signal for a stage used as a modulator,
• La tension de grille est contrôlable en amplitude, ajustage du courant de drain de repos, ajustage du gain RF de l'étage.• The gate voltage is controllable in amplitude, adjustment of the quiescent drain current, adjustment of the RF gain of the stage.
Le procédé selon l'invention consiste notamment à commander l'ouverture et la fermeture du commutateur 10 en fonction du signal de synchronisation d'émission du signal impulsionnel. On commande par exemple l'alimentation du drain du transistor en fonction du signal émis.The method according to the invention consists in particular in controlling the opening and closing of the switch 10 as a function of the transmit synchronization signal of the pulse signal. For example, the supply of the transistor drain depends on the transmitted signal.
L'alimentation du drain est réalisée en fonction de la position des impulsions RF à émettre. On peut aussi commander la tension de grille du transistor en appliquant une tension continue variable. Selon une variante de réalisation, on commande la tension de grille du transistor en appliquant un signal de modulation de forme donnée. The supply of the drain is made according to the position of the pulses RF to emit. It is also possible to control the gate voltage of the transistor by applying a variable DC voltage. According to an alternative embodiment, the gate voltage of the transistor is controlled by applying a given modulation signal.

Claims

REVENDICATIONS
1 - Dispositif d'amplification de signaux RF impulsionnels comprenant un ou plusieurs transistors chacun comprenant un drain, une grille, une source caractérisé en ce qu'il comporte un dispositif (4) pour synchroniser l'alimentation du drain avec une impulsion RF.1 - Device for amplifying pulse RF signals comprising one or more transistors each comprising a drain, a gate, a source characterized in that it comprises a device (4) for synchronizing the drain supply with an RF pulse.
2 - Dispositif selon la revendication 1 caractérisé en ce que l'alimentation de la grille du transistor est une tension continue variable de commande de gain.2 - Device according to claim 1 characterized in that the supply of the gate of the transistor is a variable DC voltage gain control.
3 - Dispositif selon la revendication 1 caractérisé en ce que l'alimentation de la grille du transistor est un signal de modulation ayant une forme donnée.3 - Device according to claim 1 characterized in that the supply of the gate of the transistor is a modulation signal having a given shape.
4 - Procédé pour amplifier des signaux RF impulsionnels caractérisé en ce qu'il comporte au moins une étape où l'on commande l'alimentation du drain d'un transistor en fonction du signal émis.4 - Process for amplifying pulsed RF signals characterized in that it comprises at least one step in which the supply of the drain of a transistor is controlled according to the transmitted signal.
5 - Procédé selon la revendication 4 caractérisé en ce que l'on commande la tension de grille d'un transistor en appliquant une tension continue variable.5 - Process according to claim 4 characterized in that one controls the gate voltage of a transistor by applying a variable DC voltage.
6 - Procédé selon la revendication 4 caractérisé en ce que l'on commande la tension de grille d'un transistor en appliquant un signal de modulation de forme donnée. 6 - Process according to claim 4 characterized in that one controls the gate voltage of a transistor by applying a given modulation signal form.
EP06793081A 2005-08-30 2006-08-30 Device and method for amplifying pulsed rf signals Ceased EP1938451A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0508876A FR2890258B1 (en) 2005-08-30 2005-08-30 DEVICE AND METHOD FOR AMPLIFYING IMPULSE RF SIGNALS
PCT/EP2006/065837 WO2007025995A1 (en) 2005-08-30 2006-08-30 Device and method for amplifying pulsed rf signals

Publications (1)

Publication Number Publication Date
EP1938451A1 true EP1938451A1 (en) 2008-07-02

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EP06793081A Ceased EP1938451A1 (en) 2005-08-30 2006-08-30 Device and method for amplifying pulsed rf signals

Country Status (6)

Country Link
US (1) US8044714B2 (en)
EP (1) EP1938451A1 (en)
JP (1) JP2009506696A (en)
CN (1) CN101297476A (en)
FR (1) FR2890258B1 (en)
WO (1) WO2007025995A1 (en)

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US8995691B2 (en) 2008-07-14 2015-03-31 Audera Acoustics Inc. Audio amplifier
US7701308B1 (en) * 2008-11-10 2010-04-20 Raytheon Company Radio frequency modulator
FR3060915B1 (en) * 2016-12-15 2019-01-25 Thales SPECTRUM CONTROL OF IMPULSE RF EMISSION BY SHAPING PULSES

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Also Published As

Publication number Publication date
WO2007025995A1 (en) 2007-03-08
US20090195314A1 (en) 2009-08-06
US8044714B2 (en) 2011-10-25
CN101297476A (en) 2008-10-29
FR2890258B1 (en) 2007-10-12
JP2009506696A (en) 2009-02-12
FR2890258A1 (en) 2007-03-02

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