EP1938399A1 - Novel materials for n-type doping of the electron transporting layers in organic electronic devices - Google Patents

Novel materials for n-type doping of the electron transporting layers in organic electronic devices

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Publication number
EP1938399A1
EP1938399A1 EP06793040A EP06793040A EP1938399A1 EP 1938399 A1 EP1938399 A1 EP 1938399A1 EP 06793040 A EP06793040 A EP 06793040A EP 06793040 A EP06793040 A EP 06793040A EP 1938399 A1 EP1938399 A1 EP 1938399A1
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Prior art keywords
organic
organic electronic
electronic devices
electron transport
phenyl
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EP06793040A
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German (de)
French (fr)
Inventor
Andreas Kanitz
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to EP10179438A priority Critical patent/EP2267812B1/en
Publication of EP1938399A1 publication Critical patent/EP1938399A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

Definitions

  • the invention relates to new materials for improving the electron injection and the electron transport in organic components such as organic light emitting diodes (OLEDs), organic field effect transistors (OFETs) and organic solar cells.
  • organic components such as organic light emitting diodes (OLEDs), organic field effect transistors (OFETs) and organic solar cells.
  • These materials are present as precursors and are converted by the vapor deposition process into strong electron donors, so that they cover the electron transport layer or the emitter layer of the OLED by doping with the electron transporter in a small amount (called n-doping).
  • n-doping This leads to an electronic interaction with the electron transport material or the emitter, whereby such additives reduce the electron transport material or the emitter material (ie the electron uptake into the LUMO [deepest unoccupied molecular orbital] of the electron transport or electron transport).
  • the injection and electron transport-demanding effect can be significantly enhanced by the new materials of the substructures 1 to 3 to be claimed and their stability can also be improved by the changed bonding conditions.
  • Another possibility is to directly synthesize the tetradonorethylenes (Ia and 2a) or the tetradonorfulvalene (3a) and to dope the electron acceptor matrix with them.
  • the materials of substructures 2 and 3 have good glass-forming properties which also contribute to the enhancement of charge transport and charge transfer, and thus conductivity enhancement of the electron transport / emitter layer.
  • X has the meaning of an anion preferred by chloride
  • Y is O, S or N-Ar, wherein Ar is preferably phenyl or
  • R is alkyl, preferably methyl
  • Ar 1 to Ar 3 are aryl radicals whose meaning independently of one another is preferably phenyl, 1-naphthyl and 2-naphthyl.
  • novel materials which are suitable for improving the electron transport and the electron injection by chemical interaction with any desired electron transport and / or emitter layers can thus be used universally in polymer electronic components, including primarily all technologies for producing organic light emitting diodes (OLEDs). , organic field effect transistors (OFETs) and organic based devices understood photovoltaic devices such as organic solar cells.
  • OLEDs organic light emitting diodes
  • OFETs organic field effect transistors
  • organic based devices understood photovoltaic devices such as organic solar cells.
  • the invention relates to novel materials based on donor carbene intermediates for improving electron injection and electron transport in organic electronic components such as organic light-emitting diodes (OLEDs), organic field effect transistors (OFETs) and components based on organic photovoltaics, in particular organic solar cells.
  • organic electronic components such as organic light-emitting diodes (OLEDs), organic field effect transistors (OFETs) and components based on organic photovoltaics, in particular organic solar cells.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

Novel materials for n-type doping of the electron transporting layers in organic electronic devices, use for that purpose and organic electronic devices. The invention relates to novel materials based on donor carbene intermediates to improve the electron injection and the electron transport in organic electronic devices such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and devices based on organic photovoltaics, such as in particular organic solar cells.

Description

Beschreibungdescription
NEUE MATERIALIEN ZUR N-DOTIERUNG DER ELEKTRONENTRANSPORTSCHICHTEN IN ORGANISCHEN ELEKTRONISCHEN BAUELEMENTENNEW MATERIALS FOR THE N-DOPING OF ELECTRON TRANSPORT LAYERS IN ORGANIC ELECTRONIC COMPONENTS
Die Erfindung betrifft neue Materialien zur Verbesserung der Elektroneninjektion und des Elektronentransportes in organischen Bauelementen wie organischen Leuchtdioden (OLEDs) , or- ganischen Feldeffekttransistoren (OFETs) und organischen Solarzellen .The invention relates to new materials for improving the electron injection and the electron transport in organic components such as organic light emitting diodes (OLEDs), organic field effect transistors (OFETs) and organic solar cells.
In den letzten Jahren sind insbesondere für organische Leuchtdioden Materialien bekannt geworden, durch die die Elektroneninjektion sowie der Elektronentransport in OLEDs verbessert wird(Pat.: Novaled GmbH Dresden DE_10307125_Al 01.08.2004)In recent years, in particular for organic light emitting materials have become known, by which the electron injection and the electron transport in OLEDs is improved (Pat .: Novaled GmbH Dresden DE_10307125_Al 01.08.2004)
Dies bewirkt zusätzlich eine Absenkung der Betriebsspannung bei gleicher Effizienz der OLED.This additionally causes a lowering of the operating voltage with the same efficiency of the OLED.
Diese Materialien liegen als Precursor vor und werden durch den Aufdampfprozess in starke Elektronendonoren umgewandelt, so dass sie coverdampft mit dem Elektronentransporter in geringer Menge die Elektronentransportschicht bzw. die Emitter- schicht der OLED dotieren (n-Doping genannt) . Dies führt zu einer elektronischen Wechselwirkung mit dem Elektronentrans- portmaterial bzw. dem Emitter, wodurch solche Zusätze die Reduktion des Elektronentransportmaterials bzw. des Emittermaterials (also die Elektronenaufnahme in das LUMO [tiefstes unbesetztes Molekülorbital] des Elektonentransport- bzw.These materials are present as precursors and are converted by the vapor deposition process into strong electron donors, so that they cover the electron transport layer or the emitter layer of the OLED by doping with the electron transporter in a small amount (called n-doping). This leads to an electronic interaction with the electron transport material or the emitter, whereby such additives reduce the electron transport material or the emitter material (ie the electron uptake into the LUMO [deepest unoccupied molecular orbital] of the electron transport or electron transport).
Emittermaterials) erleichtern, was sonst ausschließlich durch die Energie des elektrischen Feldes bewirkt wird. Infolgedessen wird bei schwächerem, elektrischem Feld (das einer geringeren Betriebsspannung entspricht) die gleiche Effizienz er- reicht, die ohne diese Materialien nur unter stärkerem elektrischem Feld möglich war. Bei den bisherigen bekannten Materialien ist jedoch vor allem die Stabilität und der injektions- und elektronentranport- fordernde Effekt noch nicht zufrieden stellend.Emitter material), which is otherwise caused solely by the energy of the electric field. As a result, at a weaker electric field (corresponding to a lower operating voltage), the same efficiency is achieved that was possible only under a stronger electric field without these materials. However, in the known materials above all, the stability and the injection and electron transport-demanding effect are still unsatisfactory.
Aufgabe der vorliegenden Erfindung ist es deshalb, ein Material zur Verbesserung der Elektroneninjektion und/oder des Elektronentransportes in organischen Bauelementen zu schaffen, das die Nachteile des Standes der Technik, insbesondere die fehlende Stabilität des injektions- und elektronentrans- portfordernden- Effekts zu erhohen.It is therefore an object of the present invention to provide a material for improving the electron injection and / or the electron transport in organic components, which increases the disadvantages of the prior art, in particular the lack of stability of the injection and electron transport-demanding effect.
Die Losung der Aufgabe und Gegenstand der Erfindung werden in den Ansprüchen, den Beispielen und der Beschreibung offenbart .The solution to the problem and subject matter of the invention are disclosed in the claims, the examples and the description.
Erfindungsgemaß kann der injektions- und elektronentranport- fordernde Effekt durch die neuen zu beanspruchenden Materialien der Substrukturen 1 - 3 noch wesentlich verstärkt werden und ihre Stabilität durch die geänderten Bindungsverhaltnisse ebenfalls verbessert werden.According to the invention, the injection and electron transport-demanding effect can be significantly enhanced by the new materials of the substructures 1 to 3 to be claimed and their stability can also be improved by the changed bonding conditions.
Ursachen dafür bilden die Verbruckung der Dialkylaminosubsti- tuenten mit dem aromatischen Kern in Substruktur 1 sowie die neu angewendeten redox-stabilen Triarylamindonoren der Sub- Strukturen 2 und 3, die einerseits durch Umwandlung über einen Carbenmechanismus in einem Hochvakuumprozess zu dimeren Tetradonorethylenen (Ia und 2a) bzw. Tetradonorfulvalenen (3a) abreagieren, die in einer Elektronenakzeptormatrix sofort in der Lage sind ein Elektron zu übertragen oder ande- rerseits aus dem Carbenzustand direkt mit der Akzeptormatrix einen elektonen-ubertragenden komplexartigen Ubergangszustand bilden, der wohl in seiner physikalischen Wirkung, nicht aber in seiner chemischen Struktur charakterisiert werden kann.The reasons for this are the bridging of the dialkylamino substituents with the aromatic nucleus in substructure 1 as well as the newly applied redox-stable triarylamine donors of substructures 2 and 3, which can be converted to dimeric tetradonorethylenes (Ia and 2a) by conversion via a carbene mechanism in a high vacuum process. or Tetradonorfulvalenen (3a), which are in an electron acceptor immediately capable of transferring an electron or on the other hand from the carbene directly with the acceptor form an electron-transferring complex-like transition state, probably in its physical action, but not in its chemical structure can be characterized.
Eine weitere Möglichkeit besteht darin die Tetradonorethylene (Ia und 2a) bzw. die Tetradonorfulvalene (3a) direkt zu synthetisieren und die Elektronenakzeptormatrix damit zu dotieren . Die Materialien der Substrukturen 2 und 3 besitzen darüber hinaus wegen der Triarylaminsubstituenten gute Glasbildungseigenschaften, die ebenfalls zur Verbesserung des Ladungstransportes und der Ladungsübertragung und damit zur Leitfähigkeitserhöhung der Elektronentransport-/Emitter-Schicht beitragen .Another possibility is to directly synthesize the tetradonorethylenes (Ia and 2a) or the tetradonorfulvalene (3a) and to dope the electron acceptor matrix with them. Moreover, because of the triarylamine substituents, the materials of substructures 2 and 3 have good glass-forming properties which also contribute to the enhancement of charge transport and charge transfer, and thus conductivity enhancement of the electron transport / emitter layer.
Substrukturen der Prekursor ( Carbenoide ;Substructures of precursors (carbenoids;
in denen die Substituenten folgende Bedeutungen besitzen:in which the substituents have the following meanings:
X hat die Bedeutung eines Anions bevorzugt von Chlorid undX has the meaning of an anion preferred by chloride and
Formiat,formate,
Y steht für O, S oder N-Ar, wobei Ar bevorzugt Phenyl oderY is O, S or N-Ar, wherein Ar is preferably phenyl or
1-Naphthyl darstellt,Represents 1-naphthyl,
R bedeutet Alkyl, bevorzugt Methyl, Ar1 bis Ar3 stehen für Arylreste, deren Bedeutung unabhängig voneinander bevorzugt Phenyl, 1-Naphthyl und 2-Naphthyl ist.R is alkyl, preferably methyl, Ar 1 to Ar 3 are aryl radicals whose meaning independently of one another is preferably phenyl, 1-naphthyl and 2-naphthyl.
Substrukturen der Carbendimere :Substructures of the Carbendimers:
3a3a
Die neuen Materialien, die geeignet sind den Elektronentrans- port und die Elektroneninjektion durch chemische Wechselwirkung mit beliebigen Elektronentransport- und/oder Emitterschichten zu verbessern können somit universell in polymerelektronischen Bauelementen erfolgreich eingesetzt werden, darunter werden vorrangig alle Technologien zur Herstellung von organischen Leuchtdioden (OLEDs), organischen Feldeffekttransistoren (OFETs) und Bauelementen auf Basis organischer photovoltaischer Bauelemente wie organische Solarzellen verstanden .The novel materials which are suitable for improving the electron transport and the electron injection by chemical interaction with any desired electron transport and / or emitter layers can thus be used universally in polymer electronic components, including primarily all technologies for producing organic light emitting diodes (OLEDs). , organic field effect transistors (OFETs) and organic based devices understood photovoltaic devices such as organic solar cells.
Ausfuhrungsbeispiele :Exemplary embodiments:
1) Darstellung eines Carbenoids 11) Representation of a carbenoid 1
Synthese durch Vilsmeyerformylierung von 8-Hydroxyjulolidin und Kondensation zum Methinfarbstoff 1 im Uberschuss vonSynthesis by Vilsmeyerformylierung of 8-Hydroxyjulolidin and condensation to the Methinfarbstoff 1 in the excess of
8-Hydroxyjulolidin und Zusatz von Kaliumchlorid.8-hydroxyjulolidine and addition of potassium chloride.
2) Darstellung eines Dimeren Ia a) Synthese des Michlers-Keton-Typ aus 8-Hydroxyjulolidin und Diethylcarbonat . b) Dimerisierung des Michlers-Keton Typ durch Mc Murry Reaktion2) Preparation of a Dimer Ia a) Synthesis of the Michlers ketone type from 8-hydroxyjulolidine and diethyl carbonate. b) Dimerization of Michler's ketone type by McMurry reaction
3) Darstellung eines Carbenoids 2 a) Synthese von 2-Phenylessigsaurediphenylamid aus Diphenyl- amin und Phenylessigsaurechlorid b) Synthese von 2-Phenylthioessigsaurediphenylamid aus 2- Phenylessigsaurediphenylamid und Lawessons Reagenz. c) Synthese von Di- [2- (diphenylamino) -3-phenyl-thien-4-yl] - dimethyl-methan aus 2-Phenylthioessigsäurediphenylamid und 1, 5-Dibrom-3, 3-dimethyl-pentan-2, 4-dion. d) Vilsmeyerformylierung des Di- [2- (diphenylamino) -3-phenyl- thien-4-yl ] -dimethyl-methan unter Bildung des Methinfarbstoffes 2 und Anionenaustausch mittels Kaliumchlorid.3) Preparation of a carbenoid 2 a) Synthesis of 2-phenylacetic acid diphenylamide from diphenylamine and phenylacetic acid chloride b) Synthesis of 2-phenylthioacetic acid diphenylamide from 2-phenylacetic acid diphenylamide and Lawesson's reagent. c) Synthesis of di- [2- (diphenylamino) -3-phenyl-thien-4-yl] -dimethylmethane from 2-phenylthioacetic acid diphenylamide and 1, 5-dibromo-3,3-dimethylpentane-2, 4- dion. d) Vilsmeyerformylation of di- [2- (diphenylamino) -3-phenylthien-4-yl] -dimethyl-methane to form the methine dye 2 and anion exchange using potassium chloride.
4) Darstellung eines Dimeren 2a a) Synthese des Michlers-Keton-Typ durch Reaktion von Di- [2- (diphenylamino) -3-phenyl-thien-4-yl ] -dimethyl-methan 3c mit Diethylcarbonat . b) Dimerisierung des Michlers-Keton Typ 4a durch Mc Murry Reaktion .4) Preparation of a dimer 2a a) Synthesis of the Michler-ketone type by reaction of di- [2- (diphenylamino) -3-phenyl-thien-4-yl] -dimethyl-methane 3c with diethyl carbonate. b) Dimerization of Michler's ketone type 4a by McMurry reaction.
5) Darstellung eines Carbenoids 3 a) Synthese von 2-Phenylessigsäurephenyl-l-naphthylamid aus Phenyl-1-naphthylamin und Phenylessigsäurechlorid b) Synthese von 2-Phenylthioessigsäurephenyl-l-naphthylamid aus 2-Phenylessigsäurephenyl-l-naphthylamid und Lawessons Reagenz . c) Synthese von 2-Phenyl-3-mopholino-thioacrylsäurephenyl-l- naphthylamid aus 2-Phenylthioessigsäurephenyl-l-naphthylamid, Morpholin und Orthoameisensäureester . d) Synthese von 1, 2-Di- [2- (phenyl-1-naphthylamino) -3-phenyl- thien-5-yl ] -ethan-1 , 2-dion aus 2-Phenyl-3-mopholino- thioacryl-säurephenyl-1-naphthylamid und 1, 4-Dibrombutan-2, 3- dion . e) Kondensation von 2, 5-Diphenyl-3, 4-di- [2- (phenyl-1- naphthyl-amino) -3-phenyl-thien-5-yl] -cyclopentadienon aus 1, 2-Di- [2- (phenyl-1-naphthylamino) -3-phenyl-thien-5-yl] - ethan-1 , 2-dion und 1, 3-Diphenylaceton mit Kalium-tert . - butylat . f) Reduktion des 2, 5-Diphenyl-3, 4-di- [2- (phenyl-1-naphthyl- amino) -3-phenyl-thien-5-yl] -cyclopentadienon zum Carbinol mittels Natriumborhydrid. g) Bildung des Methinfarbstoffes 3 aus dem Carbinol 5f mit HCl.5) Preparation of a carbenoid 3 a) Synthesis of 2-phenylacetic acid phenyl-1-naphthylamide from phenyl-1-naphthylamine and phenylacetic acid chloride b) Synthesis of 2-phenylthioacetic acid phenyl-1-naphthylamide from 2-phenylacetic acid phenyl-1-naphthylamide and Lawesson's reagent. c) Synthesis of 2-phenyl-3-mopholino-thioacrylic acid phenyl-1-naphthylamide from 2-phenylthioacetic acid phenyl-1-naphthylamide, morpholine and orthoformic acid ester. d) Synthesis of 1,2-di- [2- (phenyl-1-naphthylamino) -3-phenylthien-5-yl] ethane-1,2-dione from 2-phenyl-3-mopholino-thioacrylic acid phenyl 1-naphthylamide and 1, 4-dibromobutane-2, 3-dione. e) condensation of 2, 5-diphenyl-3,4-di- [2- (phenyl-1-naphthyl-amino) -3-phenyl-thien-5-yl] -cyclopentadienone from 1, 2-di- [2 - (phenyl-1-naphthylamino) -3-phenyl-thien-5-yl] - ethane-1, 2-dione and 1, 3-diphenylacetone with potassium tert. - butylate. f) Reduction of 2,5-diphenyl-3,4-di- [2- (phenyl-1-naphthyl-amino) -3-phenyl-thien-5-yl] cyclopentadienone to carbinol using sodium borohydride. g) formation of the methine dye 3 from the carbinol 5f with HCl.
6) Darstellung eines Dimeren 3a a) Dimerisierung des Michlers-Keton Typ 5e durch Mc Murry Reaktion . 6) Preparation of a dimer 3a 3a) Dimerization of Michler's ketone type 5e by McMurry reaction.
Die Erfindung betrifft neue Materialien auf Basis von Donor- carbenenintermediaten zur Verbesserung der Elektroneninjektion und des Elektronentransportes in organischen elektronischen Bauelementen wie organischen Leuchtdioden (OLEDs), organischen Feldeffekttransistoren (OFETs) und Bauelementen auf Basis organischer Photovoltaik wie insbesondere organischen Solarzellen . The invention relates to novel materials based on donor carbene intermediates for improving electron injection and electron transport in organic electronic components such as organic light-emitting diodes (OLEDs), organic field effect transistors (OFETs) and components based on organic photovoltaics, in particular organic solar cells.

Claims

Patentansprüche : Claims:
1. Material zur n-Dotierung der Elektronentransportschicht in organischen elektronischen Bauelementen zumindest eine Komponente gemäß einer der drei unten stehenden Strukturen 1 bis 3 umfassend,1. Material for n-doping the electron transport layer in organic electronic components comprising at least one component according to one of the three structures 1 to 3 below,
wobei die Substituenten folgende Bedeutungen besitzen: X hat die Bedeutung eines Anionswhere the substituents have the following meanings: X has the meaning of an anion
Y steht für O, S oder N-Ar, wobei Ar bevorzugt Phenyl oder 1-Y is O, S or N-Ar, where Ar is preferably phenyl or 1-
Naphthyl darstellt,Represents naphthyl,
R bedeutet Alkyl, bevorzugt Methyl,R is alkyl, preferably methyl,
Ar1 bis Ar3 stehen für Arylreste, deren Bedeutung unabhängig voneinander ist.Ar 1 to Ar 3 are aryl radicals whose meaning is independent of one another.
2. Material nach Anspruch 1, wobei X Chlorid oder Formiat und/oder R Methyl ist und/oder2. Material according to claim 1, wherein X is chloride or formate and / or R is methyl and / or
Ar1 bis Ar3 beliebig und unabhängig voneinander aus der Gruppe umfassend Phenyl, 1-Naphthyl und 2-Naphthyl ausgewählt ist .Ar 1 to Ar 3 is arbitrary and independently selected from the group comprising phenyl, 1-naphthyl and 2-naphthyl.
3. Verwendung eines Materials nach einem der Ansprüche 1 oder 2 zur n-Dotierung einer Elektronentransportschicht eines organischen elektronischen Bauelements.3. Use of a material according to one of claims 1 or 2 for the n-doping of an electron transport layer of an organic electronic component.
4. Organisches elektronisches Bauelement zumindest zwei E- lektroden mit einer aktiven Schicht umfassend, wobei zwischen zumindest einer Elektrode und der aktiven Schicht eine Elektronentransportschicht angeordnet ist, die mit einem Material nach einem der Ansprüche 1 oder 2 dotiert ist. 4. Organic electronic component comprising at least two electrodes with an active layer, wherein between at least one electrode and the active layer an electron transport layer is arranged, which is doped with a material according to one of claims 1 or 2.
EP06793040A 2005-09-05 2006-08-29 Novel materials for n-type doping of the electron transporting layers in organic electronic devices Ceased EP1938399A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10179438A EP2267812B1 (en) 2005-09-05 2006-08-29 Novel materials for n-type doping of the electron transporting layers in organic electronic devices, their use and organic electronic devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005042104 2005-09-05
PCT/EP2006/065752 WO2007028738A1 (en) 2005-09-05 2006-08-29 Novel materials for n-type doping of the electron transporting layers in organic electronic devices

Publications (1)

Publication Number Publication Date
EP1938399A1 true EP1938399A1 (en) 2008-07-02

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EP2267812B1 (en) 2012-01-04
US20080297035A1 (en) 2008-12-04
EP2267812A1 (en) 2010-12-29
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US8221903B2 (en) 2012-07-17
CN101268565A (en) 2008-09-17

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