EP1934992A1 - Balanced resistor hf resistor with a planar layer structure - Google Patents
Balanced resistor hf resistor with a planar layer structureInfo
- Publication number
- EP1934992A1 EP1934992A1 EP06806115A EP06806115A EP1934992A1 EP 1934992 A1 EP1934992 A1 EP 1934992A1 EP 06806115 A EP06806115 A EP 06806115A EP 06806115 A EP06806115 A EP 06806115A EP 1934992 A1 EP1934992 A1 EP 1934992A1
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- European Patent Office
- Prior art keywords
- incision
- layer
- resistive layer
- resistor
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 24
- 238000009826 distribution Methods 0.000 claims description 8
- 230000002349 favourable effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
- H01P1/268—Strip line terminations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
Definitions
- the present invention relates to an RF resistor, in particular an RF termination, having a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistive layer, the grounding conductor is electrically connected to a second end of the resistive layer opposite the first end, and the resistive layer between the first end and the second end is perpendicular to a direction of propagation of the resistive layer RF energy is limited to the resistive layer and perpendicular to a normal to the planar layer structure by lateral surfaces, wherein the resistance layer for balancing the characteristic impedance to a predetermined value at least one, the Querschnit According to the preamble of claim 1, the invention further relates to a method for matching the characteristic impedance of an HF resistor, in particular of an RF termination resistor, with a planar layer
- the structure of the resistive layer is adapted to the high frequency relevant environmental conditions.
- HF terminating resistors of the o.g. It is known, at the edge of the resistive layer, to electrically deactivate a planar region by incision or to form deep cuts in the cross section of the structure.
- this results in the problem that locally high current densities occur in the region of the incisions, which lead to high temperatures in the resistance layer.
- the RF resistor can be used only narrowband or possibly must be sorted out as unusable as rejects of production.
- the invention is based on the object, an RF resistance o.g. To improve the type such that at the highest possible yield of the manufacturing process and maintaining best RF properties, using increased power dissipation, the heat is optimally distributed on the resistance layer by balancing the characteristic impedance.
- the incision is formed spaced from the lateral surfaces of the resistive layer.
- the incision is formed such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
- a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, causing the electronic ohmic resistance (sheet resistance ) is changed accordingly over the entire resistance layer.
- the incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistance layer, wherein the legs of the U-shaped notch essential are formed longer than the base of the U-shaped incision, a current density on the resistive layer is uniformly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby distributes heat development on the resistive layer in the region of the incision over a larger area.
- the incision is arranged centrally between the lateral surfaces of the resistance layer.
- the incision is formed spaced from the lateral surfaces of the resistive layer.
- the incision is formed such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
- a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, thereby correspondingly increasing the characteristic impedance across the resistive layer is changed.
- the incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistive layer, wherein the
- a current density on the resistive layer is uniform over a length of the resistive layer in the propagation direction of
- an extension of the incision is formed in each case in a method of the aforementioned type at free ends of the limbs of the U-shaped incision facing away from the base. Conveniently, these extensions are formed symmetrically to each other.
- the incision is formed centrally between the lateral surfaces of the resistance layer.
- FIG. 2 shows a graph of the adaptation of the characteristic impedance over the frequency for the HF resistor according to FIG. 1 without adjustment by means of an incision
- FIG. 3 is a graphical representation of the adjustment of the characteristic impedance over the frequency for the RF resistor of FIG. 1 with adjustment by means of the incision according to the invention
- Fig. 5 shows the RF resistor of FIG. 4 with adjustment by means of the incision according to the invention according to a first preferred
- FIG. 6 shows the HF resistor according to FIG. 4 with adjustment by means of the incision according to the invention according to a second preferred embodiment in plan view.
- the preferred embodiment of an RF termination resistor comprises a resistance layer 10, an input conductor 12 and a grounding conductor 14.
- the resistance layer 10, the input conductor 12 and the grounding conductor 14 are formed as respective layers on a substrate 16 and form a planar layer structure.
- the input conductor 12 is electrically connected to a first end 18 of the resistive layer 10, and the grounding conductor 14 is electrically connected to a second end 20 of the resistive layer 10 opposite the first end 18.
- the resistive layer 10 is for converting RF energy to heat
- the input trace 12 is for supplying RF energy
- the bulk launch trace 14 is for electrical connection to a ground contact (not shown).
- the resistive layer 10 is delimited between the first end 18 and the second end 20 in the direction perpendicular to a propagation direction 22 of the RF energy on the resistive layer 10 and perpendicular to a normal 24 to the planar layer structure by lateral surfaces 26.
- a U-shaped incision 28 which at least partially narrows the cross-section of the resistance layer is formed to balance the characteristic impedance to a predetermined value on the resistive layer 10, which is arranged centrally between the lateral surfaces 26 such that an open end 30 of the U-shaped Incision 28 facing the second end 20 of the resistive layer 10.
- the U-shaped incision 28 is formed with two parallel legs 32 and a leg connecting the legs 32 34, wherein the legs 32 extend parallel to the propagation direction 22 of the RF energy on the resistive layer 10 and formed substantially longer than the base 34th.
- the current density is distributed over a large cross-sectional area and locally narrow areas with high current density are avoided. This distributes the resulting heat energy to a larger area, thus avoiding locally high-temperature localized areas.
- the alignment in the longitudinal direction in the center of the structure is made at a favorable location for the heat distribution and at the same time maintained the influence on the adjustment to the best possible fitting values is.
- the current density is uniformly distributed over the length of the resistor structure 10 in the propagation direction 22 of the RF energy in the incision 28 formed according to the invention.
- the current-carrying resistance surface is much wider.
- FIGS. 2 and 3 illustrate the advantageous effect of the incision 28 according to the invention on the characteristic impedance of the resistive layer 10. The values in FIGS. 2 and 3 are determined from simulations.
- FIG. 4 to 6 show experimentally determined temperature values at various points of the resistance structure 10 without adjustment (FIG. 4), with adjustment by means of a first embodiment of the incision 28 (FIG. 5) and with adjustment by means of a second embodiment of the incision 28 (FIG 6).
- this is formed purely U-shaped with legs 32 and base 34.
- this is U-shaped as in FIG.
- the adjustment with the incision 28 according to the invention is technologically very easy to implement and causes homogeneous temperature distribution also or just for very large adjustment slots.
- the temperature is even lowered by the uniform distribution with a high level of balance. Due to the high power losses, dimensionally large resistance structures result compared to the wavelength.
- the resistance structure 10 on the substrate 16, in particular that of the resistance surface in the longitudinal direction 22, is adapted by a changing structure width.
- the possibility of making the incision 28 relatively long for the adjustment also has a positive effect on the reflection factor. Overall, the following advantages are achieved: Constant heat distribution (no hot spots), ensuring very good reflection factors over the entire bandwidth and cost reduction due to high production yield.
- the favorable properties of the new adjustment method have a direct effect on the use of a resistance substrate. According to the practical application, boundary conditions must be adhered to. This could be, for example, maximum temperature loads of solder joints or maximum permissible temperature tolerances of resistance layers. Due to its advantageous properties, the invention is particularly suitable for the production of high-resistance HF resistors (mass production, assembly line production).
- a method for balancing the characteristic impedance of an RF resistor, in particular an RF termination resistor, with a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input conductor for supplying RF energy and a grounding conductor to the electrical Connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistive layer, the bulk starting conductor is electrically connected to a first end opposite the second end of the resistive layer and the resistive layer between the first end and the second end in the direction perpendicular to a Spreading direction of the RF energy on the resistive layer and perpendicular to a normal to the planar layer structure is limited by lateral surfaces, wherein for balancing the characteristic impedance to a predetermined value at least one, the cross section of the W At least partially narrowing incision is formed on the resistance layer, characterized in that the incision is formed at a distance from the lateral surfaces of the resistance layer.
- the incision is formed such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
- a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, whereby the sheet resistance correspondingly over the entire resistive layer is changed.
- an extension of the incision is formed in each case in a method of the aforementioned type at free ends of the limbs of the U-shaped incision facing away from the base.
- these extensions are formed symmetrically to each other.
- the incision is formed centrally between the lateral surfaces of the resistance layer.
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- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Reversible Transmitting Devices (AREA)
- Details Of Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Patentanwälte • Enropean Patent and Trademark Attorneys Patent Attorneys • Enropean Patent and Trademark Attorneys
POSTFACH 2602 51 HERRNSTR.44 TELEFON: +49-89-21 Ol 97-0 E-MAIL: MAIL@MASTERPAT.DEPOSTFACH 2602 51 HERRNSTR.44 PHONE: + 49-89-21 97-0 E-MAIL: MAIL@MASTERPAT.DE
D-80059 MÜNCHEN D-80539 MÜNCHEN TELEFAX: +49-89-21 01 97-28 WWW.MASTERPAT.DED-80059 MUNICH D-80539 MUNICH TELEFAX: + 49-89-21 01 97-28 WWW.MASTERPAT.DE
14479 Ill/am14479 Ill / am
ROSENBERGER Hochfrequenztechnik GmbH & Co. KGROSENBERGER High Frequency Technology GmbH & Co. KG
Hauptstr. 1 83413 FridolfingStr. 1 83413 Fridolfing
Abgeglichener HF-Widerstand mit einer planaren SchichtstrukturBalanced RF resistor with a planar layered structure
Die vorliegende Erfindung betrifft einen HF-Widerstand, insbesondere einen HF- Abschlusswiderstand, mit einer planaren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist, die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und die Widerstandsschicht zwischen dem ersten Ende und dem zweiten Ende in Richtung senkrecht zu einer Ausbreitungsrichtung der HF- Energie auf der Widerstandsschicht sowie senkrecht zu einer Normalen zur planaren Schichtstruktur durch seitliche Flächen begrenzt ist, wobei die Widerstandsschicht zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert wenigstens einen, den Querschnitt der Widerstandsschicht wenigstens teilweise verengenden Einschnitt aufweist, gemäß dem Oberbegriff des Anspruchs 1. Die Erfindung betrifft ferner ein Verfahren zum Abgleichen des Wellenwiderstandes eines HF- Widerstands, insbesondere eines HF-Abschlusswiderstands, mit einer planaren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist, die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und die Widerstandsschicht zwischen dem ersten Ende und dem zweiten Ende in Richtung senkrecht zu einer Ausbreitungsrichtung der HF- Energie auf der Widerstandsschicht sowie senkrecht zu einer Normalen zur planaren Schichtstruktur durch seitliche Flächen begrenzt ist, wobei zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert wenigstens ein, den Querschnitt der Widerstandsschicht wenigstens teilweise verengender Einschnitt auf der Widerstandsschicht ausgebildet wird, gemäß dem Oberbegriff des Anspruchs 9.The present invention relates to an RF resistor, in particular an RF termination, having a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistive layer, the grounding conductor is electrically connected to a second end of the resistive layer opposite the first end, and the resistive layer between the first end and the second end is perpendicular to a direction of propagation of the resistive layer RF energy is limited to the resistive layer and perpendicular to a normal to the planar layer structure by lateral surfaces, wherein the resistance layer for balancing the characteristic impedance to a predetermined value at least one, the Querschnit According to the preamble of claim 1, the invention further relates to a method for matching the characteristic impedance of an HF resistor, in particular of an RF termination resistor, with a planar layer structure comprising a resistive layer for converting on a substrate from RF energy to heat, an input trace for supplying RF energy and a grounding conductor for electrically connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistance layer, the grounding conductor is electrically connected to a second end of the resistance layer opposite the first end, and the resistance layer is between the first end and the second end in the direction perpendicular to a propagation direction of the RF energy on the resistive layer and perpendicular to a normal to the planar layer structure is limited by lateral surfaces, wherein for balancing the characteristic impedance to a predetermined value at least one, the cross section of the resistive layer at least partially narrowing incision on the resistive layer is formed, according to the preamble of claim 9.
Um den HF-Widerstand breitbandig zu gestalten, wird die Struktur der Widerstandsschicht an die hochfrequenzrelevanten Umgebungsbedingungen angepasst. Zum Abgleich von HF-Abschlusswiderständen der o.g. Art ist es bekannt, am Rand der Widerstandsschicht durch Einschnitt einen flächenhaften Bereich elektrisch zu deaktivieren oder tiefe Einschnitte in den Querschnitt der Struktur auszubilden. Hierbei ergibt sich jedoch das Problem, dass im Bereich der Einschnitte lokal hohe Stromdichten entstehen, die zu hohen Temperaturen in der Widerstandsschicht führen. Dies hat zu Folge, dass der HF-Widerstand nur noch schmalbandiger eingesetzt werden kann oder ggf. als unbrauchbar als Ausschuss der Produktion aussortiert werden muss.To make the RF resistance broadband, the structure of the resistive layer is adapted to the high frequency relevant environmental conditions. For the adjustment of HF terminating resistors of the o.g. It is known, at the edge of the resistive layer, to electrically deactivate a planar region by incision or to form deep cuts in the cross section of the structure. However, this results in the problem that locally high current densities occur in the region of the incisions, which lead to high temperatures in the resistance layer. This has the consequence that the RF resistor can be used only narrowband or possibly must be sorted out as unusable as rejects of production.
Der Erfindung liegt die Aufgabe zugrunde, einen HF-Widerstand der o.g. Art derart zu verbessern, dass bei höchstmöglicher Ausbeute des Fertigungsprozesses und Beibehaltung bester HF-Eigenschaften, unter Anwendung erhöhter Verlustleistung, die Wärme auf der Widerstandsschicht durch den Abgleich des Wellenwiderstandes optimal verteilt wird.The invention is based on the object, an RF resistance o.g. To improve the type such that at the highest possible yield of the manufacturing process and maintaining best RF properties, using increased power dissipation, the heat is optimally distributed on the resistance layer by balancing the characteristic impedance.
Diese Aufgabe wird erfindungsgemäß durch einen HF-Widerstand der o.g. Art mit den in Anspruch 1 gekennzeichneten Merkmalen sowie durch ein Verfahren der o.g. Art mit den in Anspruch 9 angegebenen Merkmalen gelöst. Vorteilhafte Ausgestaltungen der Erfindung sind in den weiteren Ansprüchen beschrieben.This object is achieved by an RF resistor of the type mentioned above with the features characterized in claim 1 and by a method of the above Art solved with the features specified in claim 9. Advantageous embodiments of the invention are described in the further claims.
Bei einem HF-Widerstand der o.g. Art ist es erfindungsgemäß vorgesehen, dass der Einschnitt von den seitlichen Flächen der Widerstandsschicht beabstandet ausgebildet ist.For an HF resistor the o.g. Art, it is inventively provided that the incision is formed spaced from the lateral surfaces of the resistive layer.
Dies hat den Vorteil, dass auch im Bereich des Einschnittes eine günstige Wärmeverteilung erzielt wird, die heiße Stellen durch erhöhte Stromdichte vermeidet.This has the advantage that even in the region of the incision, a favorable heat distribution is achieved, which avoids hot spots due to increased current density.
Zweckmäßigerweise ist der Einschnitt derart ausgebildet, dass dieser den Querschnitt der Widerstandsschicht in Richtung der Normalen zur planaren Schichtstruktur vollständig unterbricht. Dadurch ist ein Bereich der Widerstandsschicht in Richtung der Ausbreitungsrichtung der HF-Energie hinter dem Einschnitt vollständig deaktiviert und trägt nicht mehr zu Stromleitung von der Eingangsleiterbahn am ersten Ende der Widerstandsschicht zur Masseanschlussleiterbahn am zweiten Ende der Widerstandsschicht bei, wodurch der elektronische, ohmsche Widerstand (Flächenwiderstand) über die gesamte Widerstandsschicht entsprechend verändert ist.Conveniently, the incision is formed such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure. As a result, a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, causing the electronic ohmic resistance (sheet resistance ) is changed accordingly over the entire resistance layer.
Dadurch, dass der Einschnitt in der Ebene der Widerstandsschicht U-förmig mit zwei Schenkeln und einer die Schenkel verbindenden Basis und mit einer offenen Seite des U-förmigen Einschnittes dem zweiten Ende der Widerstandsschicht zugewandt ausgebildet ist, wobei die Schenkel des U-förmigen Einschnittes wesentlich länger ausgebildet sind als die Basis des U-förmigen Einschnittes, wird eine Stromdichte auf der Widerstandsschicht gleichmäßig über eine Länge der Widerstandsschicht in Ausbreitungsrichtung der HF-Energie verteilt und dadurch eine Wärmeentwicklung auf der Widerstandsschicht im Bereich des Einschnittes auf eine größere Fläche verteilt.Characterized in that the incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistance layer, wherein the legs of the U-shaped notch essential are formed longer than the base of the U-shaped incision, a current density on the resistive layer is uniformly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby distributes heat development on the resistive layer in the region of the incision over a larger area.
Zum besonders feinen Einstellen des Flächenwiderstandes ist an freien, der Basis abgewandten Enden der Schenkel des U-förmigen Einschnittes jeweils eine Verlängerung des Einschnittes ausgebildet. Zweckmäßigerweise sind diese Verlängerungen symmetrisch zueinander ausgebildet.For particularly fine adjusting the surface resistance is at free, the base remote from the ends of the legs of the U-shaped incision one each Extension of the incision formed. Conveniently, these extensions are symmetrical to each other.
In einer bevorzugten Ausführungsform ist der Einschnitt mittig zwischen den seitlichen Flächen der Widerstandsschicht angeordnet.In a preferred embodiment, the incision is arranged centrally between the lateral surfaces of the resistance layer.
Bei einem Verfahren der o.g. Art ist es erfindungsgemäß vorgesehen, dass der Einschnitt beabstandet von den seitlichen Flächen der Widerstandsschicht ausgebildet wird.In a method of o.g. It is inventively provided that the incision is formed spaced from the lateral surfaces of the resistive layer.
Dies hat den Vorteil, dass auch im Bereich des Einschnittes eine günstige Wärmeverteilung erzielt wird, die heiße Stellen durch erhöhte Stromdichte vermeidet.This has the advantage that even in the region of the incision, a favorable heat distribution is achieved, which avoids hot spots due to increased current density.
Zweckmäßigerweise wird bei einem Verfahren der vorgenannten Art der Einschnitt derart ausgebildet, dass dieser den Querschnitt der Widerstandsschicht in Richtung der Normalen zur planaren Schichtstruktur vollständig unterbricht. Dadurch ist ein Bereich der Widerstandsschicht in Richtung der Ausbreitungsrichtung der HF- Energie hinter dem Einschnitt vollständig deaktiviert und trägt nicht mehr zu Stromleitung von der Eingangsleiterbahn am ersten Ende der Widerstandsschicht zur Masseanschlussleiterbahn am zweiten Ende der Widerstandsschicht bei, wodurch der Wellenwiderstand über die gesamte Widerstandsschicht entsprechend verändert ist.Appropriately, in a method of the aforementioned type, the incision is formed such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure. As a result, a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, thereby correspondingly increasing the characteristic impedance across the resistive layer is changed.
Dadurch, dass bei einem Verfahren der vorgenannten Art der Einschnitt in der Ebene der Widerstandsschicht U-förmig mit zwei Schenkeln und einer die Schenkel verbindenden Basis und mit einer offenen Seite des U-förmigen Einschnittes dem zweiten Ende der Widerstandsschicht zugewandt ausgebildet wird, wobei dieCharacterized in that, in a method of the aforementioned type, the incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistive layer, wherein the
Schenkel des U-förmigen Einschnittes wesentlich länger ausgebildet werden als dieLegs of the U-shaped incision are formed much longer than the
Basis des U-förmigen Einschnittes, wird eine Stromdichte auf der Widerstandsschicht gleichmäßig über eine Länge der Widerstandsschicht in Ausbreitungsrichtung derBase of the U-shaped notch, a current density on the resistive layer is uniform over a length of the resistive layer in the propagation direction of
HF-Energie verteilt und dadurch eine Wärmeentwicklung auf der Widerstandsschicht im Bereich des Einschnittes auf eine größere Fläche verteilt. Zum besonders feinen Einstellen des Wellenwiderstandes wird bei einem Verfahren der vorgenannten Art an freien, der Basis abgewandten Enden der Schenkel des U- förmigen Einschnittes jeweils eine Verlängerung des Einschnittes ausgebildet. Zweckmäßigerweise werden diese Verlängerungen symmetrisch zueinander ausgebildet.Distributes RF energy and thereby distributes a heat development on the resistance layer in the region of the incision over a larger area. For particularly fine adjustment of the characteristic impedance, an extension of the incision is formed in each case in a method of the aforementioned type at free ends of the limbs of the U-shaped incision facing away from the base. Conveniently, these extensions are formed symmetrically to each other.
In einer bevorzugten Ausführungsform des vorgenannten Verfahrens wird der Einschnitt mittig zwischen den seitlichen Flächen der Widerstandsschicht ausgebildet.In a preferred embodiment of the aforementioned method, the incision is formed centrally between the lateral surfaces of the resistance layer.
Die Erfindung wird im Folgenden anhand der Zeichnung näher erläutert. Diese zeigt in:The invention will be explained in more detail below with reference to the drawing. This shows in:
Fig. 1 eine bevorzugte Ausführungsform eines erfindungsgemäßen HF-Widerstandes in Aufsicht,1 shows a preferred embodiment of an inventive RF resistor in supervision,
Fig. 2 eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für den HF-Widerstand gemäß Fig. 1 ohne Abgleich mittels eines Einschnittes,2 shows a graph of the adaptation of the characteristic impedance over the frequency for the HF resistor according to FIG. 1 without adjustment by means of an incision, FIG.
Fig. 3 eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für den HF-Widerstand gemäß Fig. 1 mit Abgleich mittels des erfindungsgemäßen Einschnittes,3 is a graphical representation of the adjustment of the characteristic impedance over the frequency for the RF resistor of FIG. 1 with adjustment by means of the incision according to the invention, FIG.
Fig. 4 eine alternative Ausführungsform eines HF-Widerstandes ohne Abgleich mittels des erfindungsgemäßen Einschnittes in Aufsicht,4 shows an alternative embodiment of an HF resistor without adjustment by means of the incision according to the invention in plan view,
Fig. 5 den HF-Widerstand gemäß Fig. 4 mit Abgleich mittels des erfindungsgemäßen Einschnittes gemäß einer ersten bevorzugtenFig. 5 shows the RF resistor of FIG. 4 with adjustment by means of the incision according to the invention according to a first preferred
Ausführungsform in Aufsicht und Fig.6 den HF-Widerstand gemäß Fig. 4 mit Abgleich mittels des erfindungsgemäßen Einschnittes gemäß einer zweiten bevorzugten Ausführungsform in Aufsicht.Embodiment in supervision and FIG. 6 shows the HF resistor according to FIG. 4 with adjustment by means of the incision according to the invention according to a second preferred embodiment in plan view.
Die aus Fig.1 ersichtliche, bevorzugte Ausführungsform eines erfindungsgemäßen HF-Abschlusswiderstands umfasst eine Widerstandsschicht 10, eine Eingangsleiterbahn 12 und eine Masseanschussleiterbahn 14. Die Widerstandsschicht 10, die Eingangsleiterbahn 12 und die Masseanschussleiterbahn 14 sind als jeweilige Schichten auf einem Substrat 16 ausgebildet und bilden eine planare Schichtstruktur. Die Eingangsleiterbahn 12 ist mit einem ersten Ende 18 der Widerstandsschicht 10 elektrisch verbunden und die Masseanschussleiterbahn 14 mit einem dem ersten Ende 18 gegenüberliegenden zweiten Ende 20 der Widerstandsschicht 10 elektrisch verbunden. Die Widerstandsschicht 10 dient zum Umwandeln von HF-Energie in Wärme, die Eingangsleiterbahn 12 dient zum Zuführen von HF-Energie und die Masseanschussleiterbahn 14 dient zum elektrischen Verbinden mit einem Massekontakt (nicht dargestellt).The preferred embodiment of an RF termination resistor according to the invention, as shown in FIG. 1, comprises a resistance layer 10, an input conductor 12 and a grounding conductor 14. The resistance layer 10, the input conductor 12 and the grounding conductor 14 are formed as respective layers on a substrate 16 and form a planar layer structure. The input conductor 12 is electrically connected to a first end 18 of the resistive layer 10, and the grounding conductor 14 is electrically connected to a second end 20 of the resistive layer 10 opposite the first end 18. The resistive layer 10 is for converting RF energy to heat, the input trace 12 is for supplying RF energy, and the bulk launch trace 14 is for electrical connection to a ground contact (not shown).
Die Widerstandsschicht 10 ist zwischen dem ersten Ende 18 und dem zweiten Ende 20 in Richtung senkrecht zu einer Ausbreitungsrichtung 22 der HF-Energie auf der Widerstandsschicht 10 sowie senkrecht zu einer Normalen 24 zur planaren Schichtstruktur durch seitliche Flächen 26 begrenzt. Erfindungsgemäß ist zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert auf der Widerstandsschicht 10 ein den Querschnitt der Widerstandsschicht wenigstens teilweise verengender, U-förmiger Einschnitt 28 ausgebildet, der mittig zwischen den seitlichen Flächen 26 derart angeordnet ist, dass ein offenes Ende 30 des U- förmigen Einschnitts 28 dem zweiten Ende 20 der Widerstandsschicht 10 zugewandt ist. Der U-förmige Einschnitt 28 ist mit zwei parallelen Schenkeln 32 und eine die Schenkel 32 miteinander verbindenden Basis 34 ausgebildet, wobei sich die Schenkel 32 parallel zur Ausbreitungsrichtung 22 der HF-Energie auf der Widerstandsschicht 10 erstrecken und wesentlich länger ausgebildet sind als die Basis 34. Hierdurch ergibt sich eine relativ große, elektrisch deaktivierter Bereich zwischen den Schenkeln 32, wobei gleichzeitig der elektrisch wirksame Querschnitt im Bereich des Einschnittes 28 relativ groß bleibt. Dadurch verteilt sich die Stromdichte über eine großen Querschnittsbereich und lokal eng begrenzte Stellen mit hoher Stromdicht sind vermieden. Dies verteilt die sich ergebende Wärmeenergie auf einen größeren Bereich, so dass lokal eng begrenzte Stellen mit hoher Temperatur vermieden sind.The resistive layer 10 is delimited between the first end 18 and the second end 20 in the direction perpendicular to a propagation direction 22 of the RF energy on the resistive layer 10 and perpendicular to a normal 24 to the planar layer structure by lateral surfaces 26. According to the invention, a U-shaped incision 28 which at least partially narrows the cross-section of the resistance layer is formed to balance the characteristic impedance to a predetermined value on the resistive layer 10, which is arranged centrally between the lateral surfaces 26 such that an open end 30 of the U-shaped Incision 28 facing the second end 20 of the resistive layer 10. The U-shaped incision 28 is formed with two parallel legs 32 and a leg connecting the legs 32 34, wherein the legs 32 extend parallel to the propagation direction 22 of the RF energy on the resistive layer 10 and formed substantially longer than the base 34th This results in a relatively large, electrically deactivated area between the legs 32, at the same time the electrically effective cross section in the region of the incision 28 remains relatively large. As a result, the current density is distributed over a large cross-sectional area and locally narrow areas with high current density are avoided. This distributes the resulting heat energy to a larger area, thus avoiding locally high-temperature localized areas.
Um den erfindungsgemäßen HF-Widerstand breitbandig zu gestalten, ist also die Struktur der Widerstandsschicht an die hochfrequenzrelevanten Umgebungsbedingungen angepasst, wobei erfindungsgemäß der Abgleich in Längsrichtung in der Strukturmitte an einer für die Wärmeverteilung günstigen Stelle vorgenommen wird und gleichzeitig der Einfluss zum Abgleich auf bestmögliche Anpasswerte gewahrt ist. Wo bei der herkömmlichen Methode des Abgleichs des Wellenwiderstands heiße Stellen durch eine erhöhte Stromdichte auftreten, wird bei dem erfindungsgemäß ausgebildeten Einschnitt 28 die Stromdichte gleichmäßig über die Länge der Widerstandsstruktur 10 in Ausbreitungsrichtung 22 der HF-Energie verteilt. Die stromdurchflossene Widerstandsfläche ist wesentlich breiter.In order to design the high-frequency resistance of the invention broadband, so the structure of the resistive layer is adapted to the high-frequency relevant environmental conditions, according to the invention, the alignment in the longitudinal direction in the center of the structure is made at a favorable location for the heat distribution and at the same time maintained the influence on the adjustment to the best possible fitting values is. Where in the conventional method of balancing the characteristic impedance hot spots occur due to an increased current density, the current density is uniformly distributed over the length of the resistor structure 10 in the propagation direction 22 of the RF energy in the incision 28 formed according to the invention. The current-carrying resistance surface is much wider.
Fig. 2 und 3 veranschaulichen die vorteilhafte Wirkung des erfindungsgemäßen Einschnittes 28 auf den Wellenwiderstand der Widerstandsschicht 10. Die Werte in den Fig. 2 und 3 sind aus Simulationen ermittelt.FIGS. 2 and 3 illustrate the advantageous effect of the incision 28 according to the invention on the characteristic impedance of the resistive layer 10. The values in FIGS. 2 and 3 are determined from simulations.
Die Fig. 4 bis 6 zeigen experimentell bestimmte Temperaturwerte an verschiedenen Stellen der Widerstandsstruktur 10 ohne Abgleich (Fig. 4), mit Abgleich mittels einer ersten Ausführungsform des Einschnitts 28 (Fig. 5) und mit Abgleich mittels einer zweiten Ausführungsform des Einschnitts 28 (Fig. 6). Bei der ersten Ausführungsform des Einschnitts 28 gemäß Fig. 5 ist dieser rein U-förmig mit Schenkeln 32 und Basis 34 ausgebildet. Bei der zweiten Ausführungsform des Einschnitts 28 gemäß Fig. 6 ist dieser wie bei Fig. 5 U-förmig ausgebildet und weist zusätzlich an freien Enden der Schenkel 32 sich senkrecht zu diesen erstreckende Erweiterungen 36 des Einschnittes 28 auf, so dass diese Erweiterungen 36 senkrecht zur Ausbreitungsrichtung 22 der HF-Energie stehen und eine zusätzliche Fläche der Widerstandsstruktur 10 gegen Stromfluss abschatten, d.h. diese zusätzliche Fläche elektrisch deaktivieren, so dass diese zusätzliche Fläche nicht am Stromfluss vom ersten Ende 18 zum zweiten Ende 20 teilnimmt. Hierdurch wird zusätzlich auf den elektrischen, ohmschen Widerstand (Flächenwiderstand) der Widerstandsschicht 10 Einfluss genommen.4 to 6 show experimentally determined temperature values at various points of the resistance structure 10 without adjustment (FIG. 4), with adjustment by means of a first embodiment of the incision 28 (FIG. 5) and with adjustment by means of a second embodiment of the incision 28 (FIG 6). In the first embodiment of the incision 28 according to FIG. 5, this is formed purely U-shaped with legs 32 and base 34. In the second embodiment of the notch 28 of FIG. 6, this is U-shaped as in FIG. 5 and additionally has at free ends of the legs 32 perpendicular to these extensions 36 of the incision 28, so that these extensions 36 perpendicular to Propagation 22 of the RF energy and shade an additional area of the resistor structure 10 against current flow, ie this additional area electrically deactivate, so that this additional area does not participate in the flow of current from the first end 18 to the second end 20. In this way, in addition to the electrical, ohmic resistance (sheet resistance) of the resistive layer 10 influence.
Man sieht deutlich die Tendenz der Temperaturverteilung auf der Widerstandsschicht in Abhängigkeit des gewählten Abgleichschlitzes. Der Abgleich mit dem erfindungsgemäßen Einschnitt 28 ist technologisch sehr einfach zu realisieren und bewirkt homogene Temperaturverteilung auch bzw. gerade bei sehr großen Abgleichschlitzen. Im Gegensatz zu extremen Einschnitten (I-Schnitt), wie im Stand der Technik üblich, wird mit dem erfindungsgemäßen Einschnitt 28 die Temperatur bei großem Abgleich durch die gleichmäßige Verteilung sogar gesenkt. Aufgrund der hohen Verlustleistungen ergeben sich im Vergleich zur Wellenlänge maßlich große Widerstandsstrukturen. Um dennoch sehr gute Anpassungen der Load zu erzielen, wird die Widerstandsstruktur 10 auf dem Substrat 16, insbesondere die der Widerstandsfläche in Längsrichtung 22, durch eine sich ändernde Strukturbreite, angepasst. Die Möglichkeit den Einschnitt 28 für den Abgleich relativ lang zu gestalten, wirkt sich ebenfalls positiv auf den Reflexionsfaktor aus. Insgesamt werden folgende Vorteile erzielt: Konstante Wärmeverteilung (keine hot Spot's), Gewährleistung sehr guter Reflexionsfaktoren über gesamte Bandbreite und Kostensenkung durch hohe Ausbeute der Fertigung.One can clearly see the tendency of the temperature distribution on the resistive layer as a function of the selected tuning slot. The adjustment with the incision 28 according to the invention is technologically very easy to implement and causes homogeneous temperature distribution also or just for very large adjustment slots. In contrast to extreme incisions (I-cut), as is customary in the prior art, with the incision 28 according to the invention, the temperature is even lowered by the uniform distribution with a high level of balance. Due to the high power losses, dimensionally large resistance structures result compared to the wavelength. In order nevertheless to achieve very good adjustments of the load, the resistance structure 10 on the substrate 16, in particular that of the resistance surface in the longitudinal direction 22, is adapted by a changing structure width. The possibility of making the incision 28 relatively long for the adjustment also has a positive effect on the reflection factor. Overall, the following advantages are achieved: Constant heat distribution (no hot spots), ensuring very good reflection factors over the entire bandwidth and cost reduction due to high production yield.
Die günstigen Eigenschaften der neuen Abgleichmethode wirken sich direkt auf den Einsatz eines Widerstandssubstrates aus. Entsprechend des praktischen Einsatzes müssen Randbedingungen eingehalten werden. Dies könnten z.B. maximale Temperaturbelastungen von Lötstellen oder maximal zulässige Temperaturverträglichkeiten von Widerstandsschichten sein. Die Erfindung ist aufgrund der vorteilhaften Eigenschaften besonders für die Fertigung von HF- Widerständen in großen Stückzahlen (Massenfertigung, Fließbandfertigung) geeignet. Ein Verfahren zum Abgleichen des Wellenwiderstandes eines HF-Widerstands, insbesondere eines HF-Abschlusswiderstands, mit einer planaren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist, die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und die Widerstandsschicht zwischen dem ersten Ende und dem zweiten Ende in Richtung senkrecht zu einer Ausbreitungsrichtung der HF- Energie auf der Widerstandsschicht sowie senkrecht zu einer Normalen zur planaren Schichtstruktur durch seitliche Flächen begrenzt ist, wobei zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert wenigstens ein, den Querschnitt der Widerstandsschicht wenigstens teilweise verengender Einschnitt auf der Widerstandsschicht ausgebildet wird, ist dadurch gekennzeichnet, dass der Einschnitt beabstandet von den seitlichen Flächen der Widerstandsschicht ausgebildet wird.The favorable properties of the new adjustment method have a direct effect on the use of a resistance substrate. According to the practical application, boundary conditions must be adhered to. This could be, for example, maximum temperature loads of solder joints or maximum permissible temperature tolerances of resistance layers. Due to its advantageous properties, the invention is particularly suitable for the production of high-resistance HF resistors (mass production, assembly line production). A method for balancing the characteristic impedance of an RF resistor, in particular an RF termination resistor, with a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input conductor for supplying RF energy and a grounding conductor to the electrical Connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistive layer, the bulk starting conductor is electrically connected to a first end opposite the second end of the resistive layer and the resistive layer between the first end and the second end in the direction perpendicular to a Spreading direction of the RF energy on the resistive layer and perpendicular to a normal to the planar layer structure is limited by lateral surfaces, wherein for balancing the characteristic impedance to a predetermined value at least one, the cross section of the W At least partially narrowing incision is formed on the resistance layer, characterized in that the incision is formed at a distance from the lateral surfaces of the resistance layer.
Dies hat den Vorteil, dass auch im Bereich des Einschnittes eine günstige Wärmeverteilung erzielt wird, die heiße Stellen durch erhöhte Stromdichte vermeidet.This has the advantage that even in the region of the incision, a favorable heat distribution is achieved, which avoids hot spots due to increased current density.
Zweckmäßigerweise wird bei einem Verfahren der vorgenannten Art der Einschnitt derart ausgebildet, dass dieser den Querschnitt der Widerstandsschicht in Richtung der Normalen zur planaren Schichtstruktur vollständig unterbricht. Dadurch ist ein Bereich der Widerstandsschicht in Richtung der Ausbreitungsrichtung der HF- Energie hinter dem Einschnitt vollständig deaktiviert und trägt nicht mehr zu Stromleitung von der Eingangsleiterbahn am ersten Ende der Widerstandsschicht zur Masseanschlussleiterbahn am zweiten Ende der Widerstandsschicht bei, wodurch der Flächenwiderstand über die gesamte Widerstandsschicht entsprechend verändert ist. Dadurch, dass bei einem Verfahren der vorgenannten Art der Einschnitt in der Ebene der Widerstandsschicht U-förmig mit zwei Schenkeln und einer die Schenkel verbindenden Basis und mit einer offenen Seite des U-förmigen Einschnittes dem zweiten Ende der Widerstandsschicht zugewandt ausgebildet wird, wobei die Schenkel des U-förmigen Einschnittes wesentlich länger ausgebildet werden als die Basis des U-förmigen Einschnittes, wird eine Stromdichte auf der Widerstandsschicht gleichmäßig über eine Länge der Widerstandsschicht in Ausbreitungsrichtung der HF-Energie verteilt und dadurch eine Wärmeentwicklung auf der Widerstandsschicht im Bereich des Einschnittes auf eine größere Fläche verteilt.Appropriately, in a method of the aforementioned type, the incision is formed such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure. Thereby, a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, whereby the sheet resistance correspondingly over the entire resistive layer is changed. Characterized in that in a method of the aforementioned type of incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistive layer, wherein the legs the U-shaped incision are formed much longer than the base of the U-shaped incision, a current density on the resistive layer is evenly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby heat development on the resistive layer in the region of the incision on a distributed over a larger area.
Zum besonders feinen Einstellen des Wellenwiderstandes wird bei einem Verfahren der vorgenannten Art an freien, der Basis abgewandten Enden der Schenkel des U- förmigen Einschnittes jeweils eine Verlängerung des Einschnittes ausgebildet. Zweckmäßigerweise werden diese Verlängerungen symmetrisch zueinander ausgebildet.For particularly fine adjustment of the characteristic impedance, an extension of the incision is formed in each case in a method of the aforementioned type at free ends of the limbs of the U-shaped incision facing away from the base. Conveniently, these extensions are formed symmetrically to each other.
In einer bevorzugten Ausführungsform des vorgenannten Verfahrens wird der Einschnitt mittig zwischen den seitlichen Flächen der Widerstandsschicht ausgebildet. In a preferred embodiment of the aforementioned method, the incision is formed centrally between the lateral surfaces of the resistance layer.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE202005015927U DE202005015927U1 (en) | 2005-10-11 | 2005-10-11 | Balanced high frequency resistor especially a termination resistor with a planar layer structure and having a notch spaced from the side surfaces of the resistive layer |
| PCT/EP2006/009736 WO2007042243A1 (en) | 2005-10-11 | 2006-10-09 | Balanced resistor hf resistor with a planar layer structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1934992A1 true EP1934992A1 (en) | 2008-06-25 |
| EP1934992B1 EP1934992B1 (en) | 2009-01-28 |
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ID=35530599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP06806115A Active EP1934992B1 (en) | 2005-10-11 | 2006-10-09 | Balanced resistor hf resistor with a planar layer structure |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8063731B2 (en) |
| EP (1) | EP1934992B1 (en) |
| JP (1) | JP2009512293A (en) |
| CN (1) | CN101288134B (en) |
| AT (1) | ATE422096T1 (en) |
| CA (1) | CA2624472C (en) |
| DE (2) | DE202005015927U1 (en) |
| HK (1) | HK1124954A1 (en) |
| NO (1) | NO337881B1 (en) |
| WO (1) | WO2007042243A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5419088B2 (en) * | 2010-01-07 | 2014-02-19 | アルパイン株式会社 | Substrate attenuation circuit |
| CN101923928B (en) * | 2010-03-25 | 2012-05-23 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| KR102709957B1 (en) * | 2022-08-03 | 2024-09-25 | (주) 알엔투테크놀로지 | Wide band termination having aperture electrode |
| KR102699882B1 (en) * | 2022-08-03 | 2024-08-29 | (주) 알엔투테크놀로지 | High power termination having common electrode |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1945839B2 (en) * | 1969-09-10 | 1978-03-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Termination resistor covering wide frequency range - has absorption layer at end of strip conductor linked to earthing conductor |
| DE2634812C2 (en) * | 1976-08-03 | 1983-05-05 | Spinner-GmbH Elektrotechnische Fabrik, 8000 München | HF power terminating resistor |
| US4148005A (en) * | 1977-10-14 | 1979-04-03 | The United States Of America As Represented By The Secretary Of The Army | Thermometric transducer device |
| JPH01304705A (en) * | 1988-06-01 | 1989-12-08 | Murata Mfg Co Ltd | Trimming of film resistor |
| DE3843600C1 (en) * | 1988-12-23 | 1990-03-22 | Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De | High-frequency power terminating impedance |
| US6007755A (en) * | 1995-02-21 | 1999-12-28 | Murata Manufacturing Co., Ltd. | Resistor trimming method |
| US6148502A (en) * | 1997-10-02 | 2000-11-21 | Vishay Sprague, Inc. | Surface mount resistor and a method of making the same |
| FI106414B (en) * | 1999-02-02 | 2001-01-31 | Nokia Networks Oy | Bredbandsimpedansadapter |
-
2005
- 2005-10-11 DE DE202005015927U patent/DE202005015927U1/en not_active Expired - Lifetime
-
2006
- 2006-10-09 JP JP2008534913A patent/JP2009512293A/en not_active Withdrawn
- 2006-10-09 DE DE502006002761T patent/DE502006002761D1/en active Active
- 2006-10-09 EP EP06806115A patent/EP1934992B1/en active Active
- 2006-10-09 AT AT06806115T patent/ATE422096T1/en not_active IP Right Cessation
- 2006-10-09 WO PCT/EP2006/009736 patent/WO2007042243A1/en active Application Filing
- 2006-10-09 CA CA2624472A patent/CA2624472C/en active Active
- 2006-10-09 US US12/089,146 patent/US8063731B2/en not_active Expired - Fee Related
- 2006-10-09 CN CN2006800379577A patent/CN101288134B/en not_active Expired - Fee Related
-
2008
- 2008-05-06 NO NO20082123A patent/NO337881B1/en not_active IP Right Cessation
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2009
- 2009-03-03 HK HK09102000.5A patent/HK1124954A1/en not_active IP Right Cessation
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| Title |
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| See references of WO2007042243A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2624472C (en) | 2013-06-04 |
| JP2009512293A (en) | 2009-03-19 |
| WO2007042243A1 (en) | 2007-04-19 |
| NO337881B1 (en) | 2016-07-04 |
| CN101288134B (en) | 2011-02-09 |
| DE502006002761D1 (en) | 2009-03-19 |
| NO20082123L (en) | 2008-05-06 |
| HK1124954A1 (en) | 2009-07-24 |
| ATE422096T1 (en) | 2009-02-15 |
| CN101288134A (en) | 2008-10-15 |
| US20090206981A1 (en) | 2009-08-20 |
| US8063731B2 (en) | 2011-11-22 |
| EP1934992B1 (en) | 2009-01-28 |
| CA2624472A1 (en) | 2007-04-19 |
| DE202005015927U1 (en) | 2005-12-29 |
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