EP1934133A1 - Method of fabricating suspended beam in a mems process - Google Patents

Method of fabricating suspended beam in a mems process

Info

Publication number
EP1934133A1
EP1934133A1 EP05791165A EP05791165A EP1934133A1 EP 1934133 A1 EP1934133 A1 EP 1934133A1 EP 05791165 A EP05791165 A EP 05791165A EP 05791165 A EP05791165 A EP 05791165A EP 1934133 A1 EP1934133 A1 EP 1934133A1
Authority
EP
European Patent Office
Prior art keywords
ink
sacrificial material
nozzle
pit
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05791165A
Other languages
German (de)
French (fr)
Other versions
EP1934133A4 (en
Inventor
Kia Silverbrook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silverbrook Research Pty Ltd
Original Assignee
Silverbrook Research Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silverbrook Research Pty Ltd filed Critical Silverbrook Research Pty Ltd
Publication of EP1934133A1 publication Critical patent/EP1934133A1/en
Publication of EP1934133A4 publication Critical patent/EP1934133A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14032—Structure of the pressure chamber
    • B41J2/1404—Geometrical characteristics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/05—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers produced by the application of heat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1601—Production of bubble jet print heads
    • B41J2/1603—Production of bubble jet print heads of the front shooter type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B41J2/1628—Manufacturing processes etching dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1631—Manufacturing processes photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1637—Manufacturing processes molding
    • B41J2/1639—Manufacturing processes molding sacrificial molding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2002/14403—Structure thereof only for on-demand ink jet heads including a filter
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2002/14475—Structure thereof only for on-demand ink jet heads characterised by nozzle shapes or number of orifices per chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/11—Embodiments of or processes related to ink-jet heads characterised by specific geometrical characteristics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/05—Microfluidics
    • B81B2201/052—Ink-jet print cartridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0126—Processes for the planarization of structures not provided for in B81C2201/0119 - B81C2201/0125

Definitions

  • the present invention relates to the field of inkjet printers and discloses an inkjet printing system using printheads manufactured with micro-electromechanical systems (MEMS) techniques.
  • MEMS micro-electromechanical systems
  • the present invention involves the ejection of ink drops by way of forming gas or vapor bubbles in a bubble forming liquid. This principle is generally described in US 3, 747,120 (Stemme). Each pixel in the printed image is derived ink drops ejected from one or more ink nozzles. In recent years, inkjet printing has become increasing popular primarily due to its inexpensive and versatile nature. Many different aspects and techniques for inkjet printing are described in detail in the above cross referenced documents.
  • a convenient way of suspending the heater element is to deposit it on sacrificial photoresist that is subsequently removed by a release etch.
  • the sacrificial material (SAC) is deposited into a pit or trench etched into the substrate adjacent the electrodes.
  • SAC sacrificial material
  • gaps form between the sides of the pit and the SAC.
  • the heater material layer is deposited, it fills these gaps to form 'stringers' (as they are known). The stringers remain in the pit after the metal etch
  • the stringers can short circuit the heater so that it fails to generate a bubble.
  • the SAC will be deposited over the side walls so that no gaps form. Unfortunately, this produces a raised lip around top of the trench.
  • the heater material layer is deposited, it is thinner on the vertical or inclined surfaces of the lip. After the metal etch and release etch, these thin lip formations remain and cause 'hotspots' because the localized thinning increases resistance. These hotspots affect the operation of the heater and typically reduce heater life.
  • the present invention provides a method of fabricating a suspended beam in a MEMS process, said method comprising the steps of:
  • said suspended beam is substantially planar. In a further preferred form, all parts of said suspended beam have substantially the same thickness.
  • said suspended beam is an actuator for an inkjet nozzle.
  • the present invention provides a method of fabricating a suspended beam in a MEMS process, said method comprising the steps of:
  • said suspended beam is substantially planar.
  • all parts of said suspended beam have substantially the same thickness.
  • said suspended beam is an actuator for an inkjet nozzle.
  • said actuator is a heater element.
  • said heater element is suspended between a pair of electrodes.
  • said substrate is a silicon wafer.
  • said silicon wafer comprises at least one surface oxide layer.
  • said sacrificial material is photoresist.
  • said photoresist is removed by exposure through a mask followed by development.
  • said perimeter region comprises an area adjacent at least two of said sidewalls.
  • said perimeter region comprises an area adjacent all of said sidewalls.
  • removal of said sacrificial material from said perimeter region results in a space of less than 1 micron between said remaining sacrificial material and at least two of said sidewalls.
  • removal of said sacrificial material from said perimeter region results in a space of less than 1 micron between said remaining sacrificial material and all of said sidewalls.
  • said reflowing is performed by heating said sacrificial material.
  • said sacrificial material is treated to prevent further reflow prior to deposition of beam material.
  • said treatment comprises UV curing.
  • said beam material is etched into a predetermined configuration after deposition.
  • said further MEMS process steps comprise forming an inkjet nozzle containing said suspended beam.
  • the present invention provides a method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, one of said sidewalls having a chamber entrance for receiving ink from an ink conduit extending along a row of nozzles, said ink conduit receiving ink from a plurality of ink inlets defined in said substrate, said method comprising the steps of: (a) providing a substrate having a plurality of trenches corresponding to said ink inlets;
  • each nozzle chamber contains an actuator for ejecting ink through said nozzle aperture.
  • said actuator is formed prior to fabrication of said nozzle chamber.
  • said substrate is a silicon wafer.
  • said silicon wafer comprises at least one surface oxide layer.
  • said sacrificial material is photoresist.
  • said openings are defined by exposing said photoresist through a mask followed by development.
  • said photoresist is UV cured prior to deposition of said roof material, thereby preventing reflow of said photoresist during deposition.
  • said photoresist is removed by plasma ashing.
  • a method further comprising the step of etching ink supply channels from an opposite backside of said substrate, said ink supply channels being in fluid communication with said ink inlets.
  • each ink inlet has at least one priming feature extending from a respective rim thereof, and said method further comprises defining at least one opening corresponding to said at least one priming feature in said photoresist.
  • said at least one priming feature comprises a column of roof material extending from said rim.
  • each ink inlet has a plurality of priming features positioned about a respective rim thereof.
  • said plurality of priming features together form a columnar cage extending from said rim.
  • said chamber entrance includes at least one filter structure, and said method further comprises defining at least one opening corresponding to said at least one priming feature in said photoresist.
  • said at least one filter structure comprises a column of roof material extending from said substrate to said roof.
  • each chamber entrance includes a plurality of filter structures arranged across said entrance.
  • each chamber entrance includes a plurality of rows of filter structures arranged across said entrance.
  • said rows of filter structures are staggered.
  • a method of fabricating a plurality of inkjet nozzles on a substrate each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, said chamber having an entrance for receiving ink from at least one ink inlet defined in said substrate, said at least one ink inlet having at least one priming feature extending from a respective rim thereof, said method comprising the steps of:
  • said at least one priming feature comprises a column of roof material extending from said rim.
  • each ink inlet has a plurality of priming features positioned about a respective rim thereof.
  • said plurality of priming features together form a columnar cage extending from said rim.
  • each nozzle chamber contains an actuator for ejecting ink through said nozzle aperture.
  • said actuator is formed prior to fabrication of said nozzle chamber.
  • said substrate is a silicon wafer.
  • said silicon wafer comprises at least one surface oxide layer.
  • said sacrificial material is photoresist.
  • said openings are defined by exposing said photoresist through a mask followed by development.
  • said photoresist is UV cured prior to deposition of said roof material, thereby preventing reflow of said photoresist during deposition.
  • said photoresist is removed by plasma ashing.
  • a method further comprising the step of etching ink supply channels from an opposite backside of said substrate, said ink supply channels being in fluid communication with said ink inlets.
  • said chamber entrance is defined in one of said sidewalls of said nozzle chamber.
  • said chamber entrance receives ink from an ink conduit extending along a row of nozzles, whereby step (c) further comprises defining further openings in said sacrificial material, said further openings being positioned to form said ink conduit when filled with roof material.
  • said ink conduit receives ink from said at least one ink inlet.
  • the present invention provides a method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, one of said sidewalls having a chamber entrance for receiving ink from at least one ink inlet defined in said substrate, said chamber entrance including at least one filter structure, said method comprising the steps of:
  • said filter structure comprises a column of roof material extending from said substrate to said roof.
  • each chamber entrance includes a plurality of filter structures arranged across said entrance.
  • each chamber entrance includes a plurality of rows of filter structures arranged across said entrance.
  • said rows of filter structures are staggered.
  • each nozzle chamber contains an actuator for ejecting ink through said nozzle aperture.
  • said actuator is formed prior to fabrication of said nozzle chamber.
  • said substrate is a silicon wafer.
  • said silicon wafer comprises at least one surface oxide layer.
  • said sacrificial material is photoresist.
  • said openings are defined by exposing said photoresist through a mask followed by development.
  • said photoresist is UV cured prior to deposition of said roof material, thereby preventing refiow of said photoresist during deposition.
  • said photoresist is removed by plasma ashing.
  • a method further comprising the step of etching ink supply channels from an opposite backside of said substrate, said ink supply channels being in fluid communication with said ink inlets.
  • said chamber entrance receives ink from an ink conduit extending along a row of nozzles, whereby step (c) further comprises defining further openings in said sacrificial material, said further openings being positioned to form said ink conduit when filled with roof material.
  • said ink conduit receives ink from said at least one ink inlet.
  • the present invention provides a method of forming a low-stiction nozzle plate for an inkjet printhead, said nozzle plate having a plurality of nozzle apertures defined therein, each nozzle aperture having a respective nozzle rim, said method comprising the steps of:
  • each nozzle rim comprises at least one projection around a perimeter of each nozzle aperture.
  • each nozzle rim comprises a plurality of coaxial projections around a perimeter of each nozzle aperture.
  • each stiction-reducing formation comprises a columnar projection on said nozzle plate.
  • each columnar projection projects at least 1 micron from said nozzle plate.
  • each columnar projection is spaced apart from an adjacent columnar projection by less than 2 microns.
  • each stiction-reducing formation comprises an elongate wall projection on said nozzle plate.
  • each wall projection projects at least 1 micron from said nozzle plate.
  • said wall projections are positioned for minimizing color-mixing of inks on said nozzle plate.
  • said wall projections extend along said nozzle plate parallel with rows of nozzles, each nozzle in a row ejecting the same colored ink.
  • the positions of said nozzle rims and said stiction-reducing formations are defined by photolithographic masking.
  • At least half of the surface area of said nozzle plate is tiled with stiction-reducing formations.
  • said inkjet nozzle assemblies are formed on a silicon substrate and said nozzle plate is spaced apart from said substrate.
  • said nozzle plate is comprised of silicon nitride, silicon oxide, silicon oxynitride or aluminium nitride.
  • said nozzle assemblies are sealed by CVD or PECVD deposition of said roof material.
  • said roof material is deposited onto a sacrificial scaffold.
  • each inkjet nozzle assembly has at least one nozzle aperture associated therewith for ejection of ink.
  • said nozzle plate is subsequently treated with a hydrophobizing material.
  • the printhead according to the invention comprises a plurality of nozzles, as well as a chamber and one or more heater elements corresponding to each nozzle.
  • the smallest repeating units of the printhead will have an ink supply inlet feeding ink to one or more chambers.
  • the entire nozzle array is formed by repeating these individual units. Such an individual unit is referred to herein as a "unit cell”.
  • the term "ink” is used to signify any ejectable liquid, and is not limited to conventional inks containing colored dyes.
  • non-colored inks include fixatives, infrared absorber inks, functionalized chemicals, adhesives, biological fluids, medicaments, water and other solvents, and so on.
  • the ink or ejectable liquid also need not necessarily be a strictly a liquid, and may contain a suspension of solid particles.
  • Figure 1 shows a partially fabricated unit cell of the MEMS nozzle array on a printhead according to the present invention, the unit cell being section along A-A of Figure 3;
  • Figure 2 shows a perspective of the partially fabricated unit cell of Figure 1;
  • Figure 3 shows the mark associated with the etch of the heater element trench
  • Figure 4 is a sectioned view of the unit cell after the etch of the trench
  • Figure 5 is a perspective view of the unit cell shown in Fig 4;
  • Figure 6 is the mask associated with the deposition of sacrificial photoresist shown in Figure 7;
  • Figure 7 shows the unit cell after the deposition of sacrificial photoresist trench, with partial enlargements of the gaps between the edges of the sacrificial material and the side walls of the trench;
  • Figure 8 is a perspective of the unit cell shown in Fig 7;
  • Figure 9 shows the unit cell following the reflow of the sacrificial photoresist to close the gaps along the side walls of the trench;
  • Figure 10 is a perspective of the unit cell shown in Fig 9;
  • Figure 11 is a section view showing the deposition of the heater material layer
  • Figure 12 is a perspective of the unit cell shown in Fig 11 ;
  • Figure 13 is the mask associated with the metal etch of the heater material shown in Figure 14;
  • Figure 14 is a section view showing the metal etch to shape the heater actuators
  • Figure 15 is a perspective of the unit cell shown in Fig 14;
  • Figure 16 is the mask associated with the etch shown in Fig 17;
  • Figure 17 shows the deposition of the photoresist layer and subsequent etch of the ink inlet to the passivation layer on top of the CMOS drive layers
  • Figure 18 is a perspective of the unit cell shown in Fig 17;
  • Figure 19 shows the oxide etch through the passivation and CMOS layers to the underlying silicon wafer
  • Figure 20 is a perspective of the unit cell shown in Fig 19;
  • Figure 21 is the deep anisotropic etch of the ink inlet into the silicon wafer
  • Figure 22 is a perspective of the unit cell shown in Fig 21;
  • Figure 23 is the mask associated with the photoresist etch shown in Fig 24;
  • Figure 24 shows the photoresist etch to form openings for the chamber roof and side walls
  • Figure 25 is a perspective of the unit cell shown in Fig 24;
  • Figure 26 shows the deposition of the side wall and risk material;
  • Figure 27 is a perspective of the unit cell shown in Fig. 26;
  • Figure 28 is the mask associated with the nozzle rim etch shown in Fig 29;
  • Figure 29 shows the etch of the roof layer to form the nozzle aperture rim
  • Figure 30 is a perspective of the unit cell shown in Fig 29;
  • Figure 31 is the mask associated with the nozzle aperture etch shown in Fig 32;
  • Figure 32 shows the etch of the roof material to form the elliptical nozzle apertures
  • Figure 33 is a perspective of the unit cell shown in Fig 32;
  • Figure 34 shows the oxygen plasma release etch of the first and second sacrificial layers
  • Figure 35 is a perspective of the unit cell shown in Fig 34;
  • Figure 36 shows the unit cell after the release etch, as well as the opposing side of the wafer
  • Figure 37 is a perspective of the unit cell shown in Fig 36;
  • Figure 38 is the mask associated with the reverse etch shown in Fig. 39;
  • Figure 39 shows the reverse etch of the ink supply channel into the wafer
  • Figure 40 is a perspective of unit cell shown in Fig 39;
  • Figure 41 shows the thinning of the wafer by backside etching
  • Figure 42 is a perspective of the unit cell shown in Fig 41;
  • Figure 43 is a partial perspective of the array of nozzles on the printhead according to the present invention.
  • Figure 44 shows the plan view of a unit cell;
  • Figure 45 shows a perspective of the unit cell shown in Fig 44;
  • Figure 46 is schematic plan view of two unit cells with the roof layer removed but certain roof layer features shown in outline only;
  • Figure 47 is schematic plan view of two unit cells with the roof layer removed but the nozzle openings shown in outline only;
  • Figure 48 is a partial schematic plan view of unit cells with ink inlet apertures in the sidewall of the chambers;
  • Figure 49 is schematic plan view of a unit cells with the roof layer removed but the nozzle openings shown in outline only;
  • Figure 50 is a partial plan view of the nozzle plate with stiction reducing formations and a particle of paper dust
  • Figure 51 is a partial plan view of the nozzle plate with residual ink gutters
  • Figure 52 is a partial section view showing the deposition of SACl photoresist in accordance with prior art techniques used to avoid stringers;
  • Figure 53 is a partial section view showing the depositon of a layer of heater material onto the SACl photoresist scaffold deposited in Figure 52;
  • Figure 54 is a partial schematic plan view of a unit cell with multiple nozzles and actuators in each of the chambers.
  • FIG. 2 is a cutaway perspective view of a nozzle unit cell 100 after the completion of CMOS processing and before MEMS processing.
  • CMOS processing of the wafer four metal layers are deposited onto a silicon wafer 2, with the metal layers being interspersed between interlayer dielectric (ILD) layers.
  • ILD interlayer dielectric
  • the four metal layers are referred to as Ml , M2, M3 and M4 layers and are built up sequentially on the wafer during CMOS processing.
  • Ml interlayer dielectric
  • M2, M3 and M4 layers are built up sequentially on the wafer during CMOS processing.
  • each heater element actuator is connected to the CMOS via a pair of electrodes defined in the outermost M4 layer.
  • the M4 CMOS layer is the foundation for subsequent MEMS processing of the wafer.
  • the M4 layer also defines bonding pads along a longitudinal edge of each printhead integrated circuit. These bonding pads (not shown) allow the CMOS to be connected to a microprocessor via wire bonds extending from the bonding pads.
  • FIGS 1 and 2 show the aluminium M4 layer 3 having a passivation layer 4 deposited thereon.
  • the M4 layer 3 has a thickness of 1 micron and is itself deposited on a 2 micron layer of CVD oxide 5.
  • the M4 layer 3 has an ink inlet opening 6 and pit openings 7. These openings define the positions of the ink inlet and pits formed subsequently in the MEMS process.
  • bonding pads along a longitudinal edge of each printhead integrated circuit are defined by etching through the passivation layer 4. This etch reveals the M4 layer 3 at the bonding pad positions.
  • the nozzle unit cell 1 is completely masked with photoresist for this step and, hence, is unaffected by the etch.
  • the first stage of MEMS processing etches a pit 8 through the passivation layer 4 and the CVD oxide layer 5.
  • This etch is defined using a layer of photoresist (not shown) exposed by the dark tone pit mask shown in Figure 3.
  • the pit 8 has a depth of 2 microns, as measured from the top of the M4 layer 3.
  • electrodes 9 are defined on either side of the pit by partially revealing the M4 layer 3 through the passivation layer 4. Ih the completed nozzle, a heater element is suspended across the pit 8 between the electrodes 9.
  • the pit 8 is filled with a first sacrificial layer (“SACl") of photoresist 10.
  • SACl first sacrificial layer
  • a 2 micron layer of high viscosity photoresist is first spun onto the wafer and then exposed using the dark tone mask shown in Figure 6.
  • the SACl photoresist 10 forms a scaffold for subsequent deposition of the heater material across the electrodes 9 on either side of the pit 8. Consequently, it is important the SACl photoresist 10 has a planar upper surface that is flush with the upper surface of the electrodes 9.
  • the SACl photoresist must completely fill the pit 8 to avoid 'stringers' of conductive heater material extending across the pit and shorting out the electrodes 9.
  • the present process deliberately exposes the SACl photoresist 10 inside the perimeter walls of the pit 8 (e.g. within 0.5 microns) using the mask shown in Figure 6. This ensures a planar upper surface of the SACl photoresist 10 and avoids any spiked regions of photoresist around the perimeter rim of the pit 8.
  • the photoresist is reflowed by heating. Reflowing the photoresist allows it to flow to the walls of the pit 8, filling it exactly.
  • Figures 9 and 10 show the SACl photoresist 10 after reflow.
  • the photoresist has a planar upper surface and meets flush with the upper surface of the M4 layer 3, which forms the electrodes 9.
  • the SACl photoresist 10 is U.V. cured and/or hardbaked to avoid any reflow during the subsequent deposition step of heater material.
  • Figures 11 and 12 show the unit cell after deposition of the 0.5 microns of heater material 11 onto the SACl photoresist 10. Due to the reflow process described above, the heater material 11 is deposited evenly and in a planar layer over the electrodes 9 and the SACl photoresist 10.
  • the heater material may be comprised of any suitable conductive material, such as TiAl, TiN, TiAlN, TiAlSiN etc.
  • a typical heater material deposition process may involve sequential deposition of a 100 A seed layer of TiAl, a 2500 A layer of TiAlN, a further 100 A seed layer of TiAl and finally a further 2500 A layer of TiAlN.
  • the layer of heater material 11 is etched to define the thermal actuator 12.
  • Each actuator 12 has contacts 28 that establish an electrical connection to respective electrodes 9 on either side of the SACl photoresist 10.
  • a heater element 29 spans between its corresponding contacts 28.
  • the heater element 12 is a linear beam spanning between the pair of electrodes 9.
  • the heater element 12 may alternatively adopt other configurations, such as those described in Applicant's US Patent No. 6,755,509, the content of which is herein incorporated by reference.
  • heater element 29 configurations having a central void may be advantageous for minimizing the deleterious effects of cavitation forces on the heater material when a bubble collapses during ink ejection.
  • Other forms of cavitation protection may be adopted such as 'bubble venting' and the use of self passivating materials.
  • an ink inlet for the nozzle is etched through the passivation layer 4, the oxide layer 5 and the silicon wafer 2.
  • each of the metal layers had an ink inlet opening (see, for example, opening 6 in the M4 layer 3 in Figure 1) etched therethrough in preparation for this ink inlet etch.
  • a relatively thick layer of photoresist 13 is spun onto the wafer and exposed using the dark tone mask shown in Figure 16.
  • the thickness of photoresist 13 required will depend on the selectivity of the deep reactive ion etch (DRIE) used to etch the ink inlet.
  • DRIE deep reactive ion etch
  • the dielectric layers are etched through to the silicon wafer below.
  • Any standard oxide etch ⁇ e.g. O 2 ZC 4 F 8 plasma) may be used.
  • an ink inlet 15 is etched through the silicon wafer 2 to a depth of 25 microns, using the same photoresist mask 13. Any standard anisotropic DREE, such as the Bosch etch (see US Patent Nos. 6,501,893 and 6,284,148) may be used for this etch. Following etching of the ink inlet 15, the photoresist layer 13 is removed by plasma ashing.
  • the ink inlet 15 is plugged with photoresist and a second sacrificial layer (“SAC2") of photoresist 16 is built up on top of the SACl photoresist 10 and passivation layer 4.
  • SAC2 photoresist 16 will serve as a scaffold for subsequent deposition of roof material, which forms a roof and sidewalls for each nozzle chamber.
  • a ⁇ 6 micron layer of high viscosity photoresist is spun onto the wafer and exposed using the dark tone mask shown in Figure 23.
  • the mask exposes sidewall openings 17 in the SAC2 photoresist 16 corresponding to the positions of chamber sidewalls and sidewalls for an ink conduit.
  • openings 18 and 19 are exposed adjacent the plugged inlet 15 and nozzle chamber entrance respectively.
  • These openings 18 and 19 will be filled with roof material in the subsequent roof deposition step and provide unique advantages in the present nozzle design.
  • the openings 18 filled with roof material act as priming features, which assist in drawing ink from the inlet 15 into each nozzle chamber. This is described in greater detail below.
  • the openings 19 filled with roof material act as filter structures and fluidic cross talk barriers. These help prevent air bubbles from entering the nozzle chambers and diffuses pressure pulses generated by the thermal actuator 12.
  • the next stage deposits 3 microns of roof material 20 onto the SAC2 photoresist 16 by PECVD.
  • the roof material 20 fills the openings 17, 18 and 19 in the SAC2 photoresist 16 to form nozzle chambers 24 having a roof 21 and sidewalls 22.
  • An ink conduit 23 for supplying ink into each nozzle chamber is also formed during deposition of the roof material 20.
  • any priming features and filter structures are formed at the same time.
  • the roof material 20 may be comprised of any suitable material, such as silicon nitride, silicon oxide, silicon oxynitride, aluminium nitride etc.
  • the next stage defines an elliptical nozzle rim 25 in the roof 21 by etching away 2 microns of roof material 20. This etch is defined using a layer of photoresist (not shown) exposed by the dark tone rim mask shown in Figure 28.
  • the elliptical rim 25 comprises two coaxial rim lips 25a and 25b, positioned over their respective thermal actuator 12.
  • the next stage defines an elliptical nozzle aperture 26 in the roof 21 by etching all the way through the remaining roof material 20, which is bounded by the rim 25. This etch is defined using a layer of photoresist (not shown) exposed by the dark tone roof mask shown in Figure 31.
  • the elliptical nozzle aperture 26 is positioned over the thermal actuator 12, as shown in Figure 33.
  • the next stage removes the SACl and SAC2 photoresist layers 10 and 16 by O 2 plasma ashing ( Figures 34 to 35).
  • the thermal actuator 12 is suspended in a single plane over the pit 8.
  • the coplanar deposition of the contacts 28 and the heater element 29 provides an efficient electrical connection with the electrodes 9.
  • Figures 36 and 37 show the entire thickness (150 microns) of the silicon wafer 2 after ashing the SACl and SAC2 photoresist layers 10 and 16.
  • ink supply channels 27 are etched from the backside of the wafer to meet with the ink inlets 15 using a standard anisotropic DRIE. This backside etch is defined using a layer of photoresist (not shown) exposed by the dark tone mask shown in Figure 38.
  • the ink supply channel 27 makes a fluidic connection between the backside of the wafer and the ink inlets 15.
  • Figure 43 shows three adjacent rows of nozzles in a cutaway perspective view of a completed printhead integrated circuit.
  • Each row of nozzles has a respective ink supply channel 27 extending along its length and supplying ink to a plurality of ink inlets 15 in each row.
  • the ink inlets supply ink to the ink conduit 23 for each row, with each nozzle chamber receiving ink from a common ink conduit for that row.
  • the heater element 29 is suspended within the chamber. This ensures that the heater element is immersed in ink when the chamber is primed. Completely immersing the heater element in ink dramatically improves the printhead efficiency. Much less heat dissipates into the underlying wafer substrate so more of the input energy is used to generate the bubble that ejects the ink.
  • the contacts may be used to support the element at its raised position.
  • the contacts at either end of the heater element can have vertical or inclined sections to connect the respective electrodes on the CMOS drive to the element at an elevated position.
  • heater material deposited on vertical or inclined surfaces is thinner than on horizontal surfaces.
  • the contact portion of the thermal actuator needs to be relatively large. Larger contacts occupy a significant area of the wafer surface and limit the nozzle packing density.
  • the present invention etches a pit or trench 8 between the electrodes 9 to drop the level of the chamber floor.
  • a layer of sacrificial photoresist (SAC) 10 (see Figure 9) is deposited in the trench to provide a scaffold for the heater element.
  • SAC 10 sacrificial photoresist
  • depositing SAC 10 in the trench 8 and simply covering it with a layer of heater material can lead to stringers forming in the gaps 46 between the SAC 10 and the sidewalls 48 of the trench 8 (as previously described in relation to Figure 7).
  • the gaps form because it is difficult to precisely match the mask with the sides of the trench 8.
  • the gaps 46 form between the sides of the pit and the SAC.
  • the heater material layer When the heater material layer is deposited, it fills these gaps to form 'stringers' (as they are known).
  • the stringers remain in the trench 8 after the metal etch (that shapes the heater element) and the release etch (to finally remove the SAC).
  • the stringers can short circuit the heater so that it fails to generate a bubble.
  • the Applicant has found that reflowing the SAC 10 closes the gaps 46 so that the scaffold between the electrodes 9 is completely fiat.
  • the planar structure of the thermal actuator, with contacts directly deposited onto the CMOS electrodes 9 and suspended heater element 29, avoids hotspots caused by vertical or inclined surfaces so that the contacts can be much smaller structures without acceptable increases in resistive losses. Low resistive losses preserves the efficient operation of a suspended heater element and the small contact size is convenient for close nozzle packing on the printhead.
  • the unit cell shown has two separate ink chambers 38, each chamber having heater element 29 extending between respective pairs of contacts 28.
  • Ink permeable structures 34 are positioned in the ink refill openings so that ink can enter the chambers, but upon actuation, the structures 34 provide enough hydraulic resistance to reduce any reverse flow or fluidic cross talk to an acceptable level.
  • Ink is fed from the reverse side of the wafer through the ink inlet 15.
  • Priming features 18 extend into the inlet opening so that an ink meniscus does not pin itself to the peripheral edge of the opening and stop the ink flow.
  • Ink from the inlet 15 fills the lateral ink conduit 23 which supplies both chambers 38 of the unit cell.
  • each chamber 38 has two nozzles 25.
  • the heater element 29 actuates (forms a bubble)
  • two drops of ink are ejected; one from each nozzle 25.
  • Each individual drop of ink has less volume than the single drop ejected if the chamber had only one nozzle.
  • each nozzle With every nozzle, there is a degree of misdirection in the ejected drop. Depending on the degree of misdirection, this can be detrimental to print quality.
  • each nozzle ejects drops of smaller volume, and having different misdirections. Several small drops misdirected in different directions are less detrimental to print quality than a single relatively large misdirected drop. The Applicant has found that the eye averages the misdirections of each small drop and effectively 'sees' a dot from a single drop with a significantly less overall misdirection.
  • a multi nozzle chamber can also eject drops more efficiently than a single nozzle chamber.
  • the heater element 29 is an elongate suspended beam of TiAlN and the bubble it forms is likewise elongated.
  • the pressure pulse created by an elongate bubble will cause ink to eject through a centrally disposed nozzle. However, some of the energy from the pressure pulse is dissipated in hydraulic losses associated with the mismatch between the geometry of the bubble and that of the nozzle.
  • Spacing several nozzles 25 along the length of the heater element 29 reduces the geometric discrepancy between the bubble shape and the nozzle configuration through which the ink ejects. This in turn reduces hydraulic resistance to ink ejection and thereby improves printhead efficiency.
  • unit cell has four ink chambers 38.
  • the chambers are defined by the sidewalls 22 and the ink permeable structures 34.
  • Each chamber has its own heater element 29.
  • the heater elements 29 are arranged in pairs that are connected in series. Between each pair is 'cold spot' 54 with lower resistance and or greater heat sinking. This ensures that bubbles do not nucleate at the cold spots 54 and thus the cold spots become the common contact between the outer contacts 28 for each heater element pair.
  • the ink permeable structures 34 allow ink to refill the chambers 38 after drop ejection but baffle the pressure pulse from each heater element 29 to reduce the fluidic cross talk between adjacent chambers. It will be appreciated that this embodiment has many parallels with that shown in Figure 49 discussed above. However, the present embodiment effectively divides the relatively long chambers of Figure 49 into two separate chambers. This further aligns the geometry of the bubble formed by the heater element 29 with the shape of the nozzle 25 to reduce hydraulic losses during drop ejection. This is achieved without reducing the nozzle density but it does add some complexity to the fabrication process.
  • the conduits (ink inlets 15 and supply conduits 23) for distributing ink to every ink chamber in the array can occupy a significant proportion of the wafer area. This can be a limiting factor for nozzle density on the printhead. By making some ink chambers part of the ink flow path to other ink chambers, while keeping each chamber sufficiently free of fluidic cross talk, reduces the amount of wafer area lost to ink supply conduits.
  • the unit cell shown has two chambers 38; each chamber has two heater elements 29 and two nozzles 25.
  • the effective reduction in drop misdirection by using multiple nozzles per chamber is discussed above in relation to the embodiment shown in Figure 49.
  • the additional benefits of dividing a single elongate chamber into separate chambers, each with their own actuators, is described above with reference to the embodiment shown in Figure 46.
  • the present embodiment uses multiple nozzles and multiple actuators in each chamber to achieve much of the advantages of the Figure 46 embodiment with a markedly less complicated design. With a simplified design, the overall dimensions of the unit cell are reduced thereby permitting greater nozzle densities.
  • the footprint of the unit cell is 64 ⁇ m long by 16 ⁇ m wide.
  • the ink permeable structure 34 is a single column at the ink refill opening to each chamber 38 instead of three spaced columns as with the Figure 46 embodiment.
  • the single column has a cross section profiled to be less resistive to refill flow, but more resistive to sudden back flow from the actuation pressure pulse.
  • Both heater elements in each chamber can be deposited simultaneously, together with the contacts 28 and the cold spot feature 54.
  • Both chambers 38 are supplied with ink from a common ink inlet 15 and supply conduit 23. These features also allow the footprint to be reduced and they are discussed in more detail below.
  • the priming features 18 have been made integral with one of the chamber sidewalls 22 and a wall ink conduit 23. The dual purpose nature of these features simplifies the fabrication and helps to keep the design compact.
  • actuators are connected in series and therefore fire in unison from the same drive signal to simplify the CMOS drive circuitry.
  • actuators in adjacent nozzles are connected in series within the same drive circuit.
  • the actuators in adjacent chambers could also be connected in parallel.
  • the CMOS drive circuitry would be more complex and the dimensions of the unit cell footprint would increase.
  • combining several actuators and their respective nozzles into a common drive circuit is an efficient implementation both in terms of printhead IC fabrication and nozzles density.
  • Reduction in the unit cell width enables the printhead to have nozzles patterns that previously would have required the nozzle density to be reduced.
  • a lower nozzle density has a corresponding influence on printhead size and/or print quality.
  • the nozzle rows are arranged in parrs with the actuators for each row extending in opposite directions.
  • the rows are staggered with respect to each other so that the printing resolution (dots per inch) is twice the nozzle pitch (nozzles per inch) along each row.
  • the same number of nozzles can be arranged into a single row instead of two staggered and opposing rows without sacrificing any print resolution (d.p.i.).
  • the embodiments shown in the accompanying figures achieve a nozzle pitch of more than 1000 nozzles per inch in each linear row.
  • the print resolution of the printhead is better than photographic (1600 dpi) when two opposing staggered rows are considered, and there is sufficient capacity for nozzle redundancy, dead nozzle compensation and so on which ensures the operation life of the printhead remains satisfactory.
  • the embodiment shown in Figure 54 has a footprint that is 16 ⁇ m wide and therefore the nozzle pitch along one row is about 1600 nozzles per inch. Accordingly, two offset staggered rows yield a resolution of about 3200 d.p.i.
  • the Applicant has focussed on identifying and combining a number of features to reduce the relevant dimensions of structures in the printhead. For example, elliptical nozzles, shifting the ink inlet from the chamber, finer geometry logic and shorter drive FETs (field effect transistors) are features developed by the Applicant to derive some of the embodiments shown. Each contributing feature necessitated a departure from conventional wisdom in the field, such as reducing the FET drive voltage from the widely used traditional 5V to 2.5V in order to decrease transistor length.
  • FIG. 50 shows a portion of the nozzle plate 56. For clarity, the nozzle apertures 26 and the nozzle rims 25 are also shown.
  • the exterior surface of the nozzle plate is patterned with columnar projections 58 extending a short distance from the plate surface.
  • the nozzle plate could also be patterned with other surface formations such as closely spaced ridges, corrugations or bumps.
  • the ink inlet passage 15 supplies ink to the four chambers 38 via the lateral ink conduit 23.
  • Distributing ink through micron-scale conduits, such as the ink inlet 15, to individual MEMS nozzles in an inkjet printhead is complicated by factors that do not arise in macro-scale flow.
  • a meniscus can form and, depending on the geometry of the aperture, it can 'pin' itself to the lip of the aperture quite strongly. This can be useful in printheads, such as bleed holes that vent trapped air bubbles but retain the ink, but it can also be problematic if stops ink flow to some chambers. This will most likely occur when initially priming the printhead with ink. If the ink meniscus pins at the ink inlet opening, the chambers supplied by that inlet will stay unprimed.
  • priming features 18 are formed so that they extend through the plane of the inlet aperture 15.
  • the priming features 18 are columns extending from the interior of the nozzle plate (not shown) to the periphery of the inlet 15. A part of each column 18 is within the periphery so that the surface tension of an ink meniscus at the ink inlet will form at the priming features 18 so as to draw the ink out of the inlet. This 'unpins' the meniscus from that section of the periphery and the flow toward the ink chambers.
  • the priming features 18 can take many forms, as long as they present a surface that extends transverse to the plane of the aperture. Furthermore, the priming feature can be an integral part of other nozzles features as shown in Figure 54. Side Entry Ink Chamber
  • the elongate heater elements 29 extend parallel to the ink distribution conduit 23. Accordingly, the elongate ink chambers 38 are likewise aligned with the ink conduit 23. Sidewall openings 60 connect the chambers 38 to the ink conduit 23. Configuring the ink chambers so that they have side inlets reduces the ink refill times. The inlets are wider and therefore refill flow rates are higher. The sidewall openings 60 have ink permeable structures 34 to keep fluidic cross talk to an acceptable level. Inlet Filter for Ink Chamber
  • the ink refill opening to each chamber 38 has a filter structure 40 to trap air bubbles or other contaminants.
  • Air bubbles and solid contaminants in ink are detrimental to the MEMS nozzle structures.
  • the solid contaminants can obvious clog the nozzle openings, while air bubbles, being highly compressible, can absorb the pressure pulse from the actuator if they get trapped in the ink chamber. This effectively disables the ejection of ink from the affected nozzle.
  • a filter structure 40 in the form of rows of obstructions extending transverse to the flow direction through the opening, each row being spaced such that they are out of registration with the obstructions in an adjacent row with respect to the flow direction, the contaminants are not likely to enter the chamber 38 while the ink refill flow rate is not overly retarded.
  • the rows are offset with respect to each other and the induced turbulence has minimal effect on the nozzle refill rate but the air bubbles or other contaminants follow a relatively tortuous flow path which increases the chance of them being retained by the obstructions 40.
  • the embodiment shown uses two rows of obstructions 40 in the form of columns extending between the wafer substrate and the nozzle plate.
  • FIG 51 the exterior surface of the nozzle 56 is shown for a unit cell such as that shown in Figure 46 described above.
  • the nozzle apertures 26 are positioned directly above the heater elements (not shown) and a series of square-edged ink gutters 44 are formed in the nozzle plate 56 above the ink conduit 23 (see Figure 46).
  • InkJet printers often have maintenance stations that cap the printhead when it's not in use.
  • the capper can be disengaged so that it peels off the exterior surface of the nozzle plate. This promotes the formation of a meniscus between the capper surface and the exterior of the nozzle plate.
  • contact angle hysteresis which relates to the angle that the surface tension in the meniscus contacts the surface (for more detail, see the
  • Gutter formations 44 running transverse to the direction that the capper is peeled away from the nozzle plate will remove and retain some of the ink in the meniscus. While the gutters do not collect all the ink in the meniscus, they do significantly reduce the level of nozzle contamination of with different coloured ink. Bubble Trap
  • Air bubbles entrained in the ink are very bad for printhead operation. Air, or rather gas in general, is highly compressible and can absorb the pressure pulse from the actuator. If a trapped bubble simply compresses in response to the actuator, ink will not eject from the nozzle. Trapped bubbles can be purged from the printhead with a forced flow of ink, but the purged ink needs blotting and the forced flow could well introduce fresh bubbles.
  • the embodiment shown in Figure 46 has a bubble trap at the ink inlet 15.
  • the trap is formed by a bubble retention structure 32 and a vent 36 formed in the roof layer.
  • the bubble retention structure is a series of columns 32 spaced around the periphery of the inlet 15.
  • the ink priming features 18 have a dual purpose and conveniently form part of the bubble retaining structure.
  • the ink permeable trap directs gas bubbles to the vent where they vent to atmosphere. By trapping the bubbles at the ink inlets and directing them to a small vent, they are effectively removed from the ink flow without any ink leakage.
  • printheads according to the present invention have at least two ink inlets 15 supplying each chamber 38 via an ink conduit 23 between the nozzle plate and underlying wafer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Micromachines (AREA)

Abstract

A method of forming a suspended beam in a MEMS process is disclosed. In the process a pit (8) is etched into a substrate (5). Sacrificial material (10) is deposited in the pit (8) and on the surrounding substrate surface. The sacrificial material (10) is then removed from the surrounding substrate surface and from the periphery of the pit (8) so that there is a gap between the sacrificial material and at least two sidewalls of the pit. The sacrificial material is then heated so that it reftows such that the remaining sacrificial material contacts the sidewalls of the pit. Material for the beam (12), which is typically a metal, is then deposited on the substrate surface and the reflowed sacrificial material, and the sacrificial material is then removed to form the suspended beam. The beam could be used as the heating element in an inkjet printer.

Description

METHOD OF FABRICATING SUSPENDED BEAM IN A MEMS PROCESS
Field of the Invention The present invention relates to the field of inkjet printers and discloses an inkjet printing system using printheads manufactured with micro-electromechanical systems (MEMS) techniques.
Cross References to Related Applications
Various methods, systems and apparatus relating to the present invention are disclosed in the following US Patents/ Patent Applications filed by the applicant or assignee of the present invention:
09/517539 6566858 09/112762 6331946 6246970 6442525 09/517384
09/505951 6374354 09/517608 09/505147 10/203564 6757832 6334190
6745331 09/517541 10/203559 10/203560 10/636263 10/636283 10/866608
10/902889 10/902833 10/940653 10/942858 10/727181 10/727162 10/727163
10/727245 10/727204 10/727233 10/727280 10/727157 10/727178 10/727210
10/727257 10/727238 10/727251 10/727159 10/727180 10/727179 10/727192
10/727274 10/727164 10/727161 10/727198 10/727158 10/754536 10/754938
10/727227 10/727160 10/934720 11/212,702 10/296522 6795215 10/296535
09/575109 10/296525 09/575110 09/607985 6398332 6394573 6622923
6747760 10/189459 10/884881 10/943941 10/949294 11/039866 11/123011
11/123010 11/144769 11/148237 10/922846 10/922845 10/854521 10/854522
10/854488 10/854487 10/854503 10/854504 10/854509 10/854510 10/854496
10/854497 10/854495 10/854498 10/854511 10/854512 10/854525 10/854526
10/854516 10/854508 10/854507 10/854515 10/854506 10/854505 10/854493
10/854494 10/854489 10/854490 10/854492 10/854491 10/854528 10/854523
10/854527 10/854524 10/854520 10/854514 10/854519 10/854513 10/854499
10/854501 10/854500 10/854502 10/854518 10/854517 10/934628 PLT046US
10/728804 10/728952 10/728806 10/728834 10/729790 10/728884 10/728970
10/728784 10/728783 10/728925 10/728842 10/728803 10/728780 10/728779
10/773189 10/773204 10/773198 10/773199 10/773190 10/773201 10/773191
10/773183 10/773195 10/773196 10/773186 10/773200 10/773185 10/773192
10/773197 10/773203 10/773187 10/773202 • * 10/773188 10/773194 10/773193
10/773184 11/008118 11/060751 11/060805 11/188017 6623101 6406129
6505916 6457809 6550895 6457812 10/296434 6428133 6746105
10/407212 10/407207 10/683064 10/683041 6750901 6476863 6788336
11/097308 11/097309 11/097335 11/097299 11/097310 11/097213 11/210687 11/097212 11/212637 10/760272 10/760273 10/760187 10/760182 10/760188
10/760218 10/760217 10/760216 10/760233 10/760246 10/760212 10/760243
10/760201 10/760185 10/760253 10/760255 10/760209 10/760208 10/760194
10/760238 10/760234 10/760235 10/760183 10/760189 10/760262 10/760232
10/760231 10/760200 10/760190 10/760191 10/760227 10/760207 10/760181
10/815625 10/815624 10/815628 10/913375 10/913373 10/913374 10/913372
10/913377 10/913378 10/913380 10/913379 10/913376 10/913381 10/986402
11/172816 11/172815 11/172814 11/003786 11/003354 11/003616 11/003418
11/003334 11/003600 11/003404 11/003419 11/003700 11/003601 11/003618
11/003615 11/003337 11/003698 11/003420 11/003682 11/003699 11/071473
11/003463 11/003701 11/003683 11/003614 11/003702 11/003684 11/003619
11/003617 10/760254 10/760210 10/760202 10/760197 10/760198 10/760249
10/760263 10/760196 10/760247 10/760223 10/760264 10/760244 10/760245
10/760222 10/760248 10/760236 10/760192 10/760203 10/760204 10/760205
10/760206 10/760267 10/760270 10/760259 10/760271 10/760275 10/760274
10/760268 10/760184 10/760195 10/760186 10/760261 10/760258 11/014764
11/014763 11/014748 11/014747 11/014761 11/014760 11/014757 11/014714
11/014713 11/014762 11/014724 11/014723 11/014756 11/014736 11/014759
11/014758 11/014725 11/014739 11/014738 11/014737 11/014726 11/014745
11/014712 11/014715 11/014751 11/014735 11/014734 11/014719 11/014750
11/014749 11/014746 11/014769 11/014729 11/014743 11/014733 11/014754
11/014755 11/014765 11/014766 11/014740 11/014720 11/014753 11/014752
11/014744 11/014741 11/014768 11/014767 11/014718 11/014717 11/014716
11/014732 11/014742 11/097268 11/097185 11/097184 09/575197 09/575195
09/575159 09/575132 09/575123 09/575148 09/575130 09/575165 09/575153
09/575118 09/575131 09/575116 09/575144 09/575139 09/575186 6681045
6728000 09/575145 09/575192 09/575181 09/575193 09/575156 09/575183
6789194 09/575150 6789191 6644642 6502614 6622999 6669385
6549935 09/575187 6727996 6591884 6439706 6760119 09/575198
6290349 6428155 6785016 09/575174 09/575163 6737591 09/575154
09/575129 09/575124 09/575188 09/575189 09/575162 09/575172 09/575170
09/575171 09/575161
The disclosures of these applications and patents are incorporated herein by reference.
Background of the Invention
The present invention involves the ejection of ink drops by way of forming gas or vapor bubbles in a bubble forming liquid. This principle is generally described in US 3, 747,120 (Stemme). Each pixel in the printed image is derived ink drops ejected from one or more ink nozzles. In recent years, inkjet printing has become increasing popular primarily due to its inexpensive and versatile nature. Many different aspects and techniques for inkjet printing are described in detail in the above cross referenced documents.
Completely immersing the heater element in ink dramatically improves the printhead efficiency. Much less heat dissipates into the underlying wafer substrate so more of the input energy is used to generate the bubble that ejects the ink.
A convenient way of suspending the heater element is to deposit it on sacrificial photoresist that is subsequently removed by a release etch. The sacrificial material (SAC) is deposited into a pit or trench etched into the substrate adjacent the electrodes. However, it is difficult to precisely match the mask with the sides of the pit. Usually, when the masked photoresist is exposed, gaps form between the sides of the pit and the SAC. When the heater material layer is deposited, it fills these gaps to form 'stringers' (as they are known). The stringers remain in the pit after the metal etch
(that shapes the heater element) and the release etch (to finally remove the SAC). The stringers can short circuit the heater so that it fails to generate a bubble.
By making the mask bigger than the trench, the SAC will be deposited over the side walls so that no gaps form. Unfortunately, this produces a raised lip around top of the trench. When the heater material layer is deposited, it is thinner on the vertical or inclined surfaces of the lip. After the metal etch and release etch, these thin lip formations remain and cause 'hotspots' because the localized thinning increases resistance. These hotspots affect the operation of the heater and typically reduce heater life. Summary of the Invention
Accordingly, the present invention provides a method of fabricating a suspended beam in a MEMS process, said method comprising the steps of:
(a) etching a pit in a substrate, said pit having a base and sidewalls;
(b) depositing sacrificial material on a surface of said substrate so as to fill said pit; (c) removing said sacrificial material from a perimeter region within said pit and from said substrate surface surrounding said pit;
(d) reflowing remaining sacrificial material within said pit such that said remaining sacrificial material contacts said sidewalls;
(e) depositing beam material on said substrate surface and on said refiowed sacrificial material; and
(f) removing said refiowed sacrificial material to form said suspended beam. Preferably said suspended beam is substantially planar. In a further preferred form, all parts of said suspended beam have substantially the same thickness.
Optionally, said suspended beam is an actuator for an inkjet nozzle.
In a first aspect the present invention provides a method of fabricating a suspended beam in a MEMS process, said method comprising the steps of:
(a) etching a pit in a substrate, said pit having a base and sidewalls;
(b) depositing sacrificial material on a surface of said substrate so as to fill said pit; (c) removing said sacrificial material from a perimeter region within said pit and from said substrate surface surrounding said pit;
(d) reflowing remaining sacrificial material within said pit such that said remaining sacrificial material contacts said sidewalls;
(e) depositing beam material on said substrate surface and on said reflowed sacrificial material; and
(f) removing said reflowed sacrificial material to form said suspended beam.
Optionally, said suspended beam is substantially planar.
Optionally, all parts of said suspended beam have substantially the same thickness.
Optionally, said suspended beam is an actuator for an inkjet nozzle.
Optionally, said actuator is a heater element.
Optionally, said heater element is suspended between a pair of electrodes.
Optionally, said substrate is a silicon wafer.
Optionally, said silicon wafer comprises at least one surface oxide layer.
Optionally, said sacrificial material is photoresist.
Optionally, said photoresist is removed by exposure through a mask followed by development.
Optionally, said perimeter region comprises an area adjacent at least two of said sidewalls. Optionally, said perimeter region comprises an area adjacent all of said sidewalls.
Optionally, removal of said sacrificial material from said perimeter region results in a space of less than 1 micron between said remaining sacrificial material and at least two of said sidewalls.
Optionally, removal of said sacrificial material from said perimeter region results in a space of less than 1 micron between said remaining sacrificial material and all of said sidewalls.
Optionally, said reflowing is performed by heating said sacrificial material.
Optionally, said sacrificial material is treated to prevent further reflow prior to deposition of beam material.
Optionally, said treatment comprises UV curing.
Optionally, said beam material is etched into a predetermined configuration after deposition.
Optionally, further MEMS process steps are performed after deposition of said beam material and prior to said removal of said reflowed sacrificial material.
Optionally, said further MEMS process steps comprise forming an inkjet nozzle containing said suspended beam.
In a second aspect the present invention provides a method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, one of said sidewalls having a chamber entrance for receiving ink from an ink conduit extending along a row of nozzles, said ink conduit receiving ink from a plurality of ink inlets defined in said substrate, said method comprising the steps of: (a) providing a substrate having a plurality of trenches corresponding to said ink inlets;
(b) depositing sacrificial material on said substrate so as fill said trenches and form a scaffold on said substrate;
(c) defining openings in said sacrificial material, said openings being positioned to form said chamber sidewalls and said ink conduit when filled with roof material; (d) depositing roof material over said sacrificial material to form simultaneously said nozzle chambers and said ink conduit; (e) etching nozzle apertures through said roof material, each nozzle chamber having at least one nozzle aperture; and
(f) removing said sacrificial material.
Optionally, each nozzle chamber contains an actuator for ejecting ink through said nozzle aperture.
Optionally, said actuator is formed prior to fabrication of said nozzle chamber.
Optionally, said substrate is a silicon wafer.
Optionally, said silicon wafer comprises at least one surface oxide layer.
Optionally, said sacrificial material is photoresist.
Optionally, said openings are defined by exposing said photoresist through a mask followed by development.
Optionally, said photoresist is UV cured prior to deposition of said roof material, thereby preventing reflow of said photoresist during deposition.
Optionally, said photoresist is removed by plasma ashing.
In a further aspect there is provided a method further comprising the step of etching ink supply channels from an opposite backside of said substrate, said ink supply channels being in fluid communication with said ink inlets.
Optionally, each ink inlet has at least one priming feature extending from a respective rim thereof, and said method further comprises defining at least one opening corresponding to said at least one priming feature in said photoresist.
Optionally, said at least one priming feature comprises a column of roof material extending from said rim.
Optionally, each ink inlet has a plurality of priming features positioned about a respective rim thereof. Optionally, said plurality of priming features together form a columnar cage extending from said rim.
Optionally, said chamber entrance includes at least one filter structure, and said method further comprises defining at least one opening corresponding to said at least one priming feature in said photoresist.
Optionally, said at least one filter structure comprises a column of roof material extending from said substrate to said roof.
Optionally, each chamber entrance includes a plurality of filter structures arranged across said entrance.
Optionally, each chamber entrance includes a plurality of rows of filter structures arranged across said entrance.
Optionally, said rows of filter structures are staggered.
In a third aspect there is provided a method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, said chamber having an entrance for receiving ink from at least one ink inlet defined in said substrate, said at least one ink inlet having at least one priming feature extending from a respective rim thereof, said method comprising the steps of:
(a) providing a substrate having a plurality of trenches corresponding to said ink inlets;
(b) depositing sacrificial material on said substrate so as fill said trenches and form a scaffold on said substrate;
(c) defining openings in said sacrificial material, said openings being positioned to form said chamber sidewalls and said at least one priming feature when filled with roof material;
(d) depositing roof material over said sacrificial material to form simultaneously said nozzle chambers and said at least one priming feature;
(e) etching nozzle apertures through said roof material, each nozzle chamber having at least one nozzle aperture; and (f) removing said sacrificial material. Optionally, said at least one priming feature comprises a column of roof material extending from said rim.
Optionally, each ink inlet has a plurality of priming features positioned about a respective rim thereof.
Optionally, said plurality of priming features together form a columnar cage extending from said rim.
Optionally, each nozzle chamber contains an actuator for ejecting ink through said nozzle aperture.
Optionally, said actuator is formed prior to fabrication of said nozzle chamber.
Optionally, said substrate is a silicon wafer.
Optionally, said silicon wafer comprises at least one surface oxide layer.
Optionally, said sacrificial material is photoresist.
Optionally, said openings are defined by exposing said photoresist through a mask followed by development.
Optionally, said photoresist is UV cured prior to deposition of said roof material, thereby preventing reflow of said photoresist during deposition.
Optionally, said photoresist is removed by plasma ashing.
In a further aspect there is provided a method further comprising the step of etching ink supply channels from an opposite backside of said substrate, said ink supply channels being in fluid communication with said ink inlets.
Optionally, said chamber entrance is defined in one of said sidewalls of said nozzle chamber.
Optionally, said chamber entrance receives ink from an ink conduit extending along a row of nozzles, whereby step (c) further comprises defining further openings in said sacrificial material, said further openings being positioned to form said ink conduit when filled with roof material. Optionally, said ink conduit receives ink from said at least one ink inlet.
In a fourth aspect the present invention provides a method of fabricating a plurality of inkjet nozzles on a substrate, each nozzle comprising a nozzle chamber having a roof spaced apart from said substrate and sidewalls extending from said roof to said substrate, one of said sidewalls having a chamber entrance for receiving ink from at least one ink inlet defined in said substrate, said chamber entrance including at least one filter structure, said method comprising the steps of:
(a) providing a substrate having a plurality of trenches corresponding to said ink inlets;
(b) depositing sacrificial material on said substrate so as fill said trenches and form a scaffold on said substrate;
(c) defining openings in said sacrificial material, said openings being positioned to form said chamber sidewalls and said at least one filter structure when filled with roof material;
(d) depositing roof material over said sacrificial material to form simultaneously said nozzle chambers and said at least one filter structure; (e) etching nozzle apertures through said roof material, each nozzle chamber having at least one nozzle aperture; and
(f) removing said sacrificial material.
Optionally, said filter structure comprises a column of roof material extending from said substrate to said roof.
Optionally, each chamber entrance includes a plurality of filter structures arranged across said entrance.
Optionally, each chamber entrance includes a plurality of rows of filter structures arranged across said entrance.
Optionally, said rows of filter structures are staggered.
Optionally, each nozzle chamber contains an actuator for ejecting ink through said nozzle aperture.
Optionally, said actuator is formed prior to fabrication of said nozzle chamber.
Optionally, said substrate is a silicon wafer.
Optionally, said silicon wafer comprises at least one surface oxide layer. Optionally, said sacrificial material is photoresist.
Optionally, said openings are defined by exposing said photoresist through a mask followed by development.
Optionally, said photoresist is UV cured prior to deposition of said roof material, thereby preventing refiow of said photoresist during deposition.
Optionally, said photoresist is removed by plasma ashing.
In a further aspect there is provided a method further comprising the step of etching ink supply channels from an opposite backside of said substrate, said ink supply channels being in fluid communication with said ink inlets.
Optionally, said chamber entrance receives ink from an ink conduit extending along a row of nozzles, whereby step (c) further comprises defining further openings in said sacrificial material, said further openings being positioned to form said ink conduit when filled with roof material.
Optionally, said ink conduit receives ink from said at least one ink inlet.
In a fifth aspect the present invention provides a method of forming a low-stiction nozzle plate for an inkjet printhead, said nozzle plate having a plurality of nozzle apertures defined therein, each nozzle aperture having a respective nozzle rim, said method comprising the steps of:
(a) providing a partially-fabricated printhead comprising a plurality of inkjet nozzle assemblies sealed with roof material;
(b) etching partially into said roof material to define simultaneously said nozzle rims and a plurality of stiction-reducing formations; and
(c) etching through said roof material to define said nozzle apertures, thereby forming said nozzle plate.
Optionally, each nozzle rim comprises at least one projection around a perimeter of each nozzle aperture.
Optionally, each nozzle rim comprises a plurality of coaxial projections around a perimeter of each nozzle aperture.
Optionally, said at least one rim projection projects at least 1 micron from said nozzle plate. Optionally, each stiction-reducing formation comprises a columnar projection on said nozzle plate.
Optionally, each columnar projection projects at least 1 micron from said nozzle plate.
Optionally, each columnar projection is spaced apart from an adjacent columnar projection by less than 2 microns.
Optionally, each stiction-reducing formation comprises an elongate wall projection on said nozzle plate.
Optionally, each wall projection projects at least 1 micron from said nozzle plate.
Optionally, said wall projections are positioned for minimizing color-mixing of inks on said nozzle plate.
Optionally, said wall projections extend along said nozzle plate parallel with rows of nozzles, each nozzle in a row ejecting the same colored ink.
Optionally, the positions of said nozzle rims and said stiction-reducing formations are defined by photolithographic masking.
Optionally, at least half of the surface area of said nozzle plate is tiled with stiction-reducing formations.
Optionally, said inkjet nozzle assemblies are formed on a silicon substrate and said nozzle plate is spaced apart from said substrate.
Optionally, said nozzle plate is comprised of silicon nitride, silicon oxide, silicon oxynitride or aluminium nitride.
Optionally, said nozzle assemblies are sealed by CVD or PECVD deposition of said roof material.
Optionally, said roof material is deposited onto a sacrificial scaffold.
Optionally, each inkjet nozzle assembly has at least one nozzle aperture associated therewith for ejection of ink. Optionally, said nozzle plate is subsequently treated with a hydrophobizing material.
The printhead according to the invention comprises a plurality of nozzles, as well as a chamber and one or more heater elements corresponding to each nozzle. The smallest repeating units of the printhead will have an ink supply inlet feeding ink to one or more chambers. The entire nozzle array is formed by repeating these individual units. Such an individual unit is referred to herein as a "unit cell".
Also, the term "ink" is used to signify any ejectable liquid, and is not limited to conventional inks containing colored dyes. Examples of non-colored inks include fixatives, infrared absorber inks, functionalized chemicals, adhesives, biological fluids, medicaments, water and other solvents, and so on. The ink or ejectable liquid also need not necessarily be a strictly a liquid, and may contain a suspension of solid particles.
Brief Description of the Drawings
Preferred embodiments of the present invention will now be described by way of example only with reference to the accompanying drawings, in which:
Figure 1 shows a partially fabricated unit cell of the MEMS nozzle array on a printhead according to the present invention, the unit cell being section along A-A of Figure 3;
Figure 2 shows a perspective of the partially fabricated unit cell of Figure 1;
Figure 3 shows the mark associated with the etch of the heater element trench;
Figure 4 is a sectioned view of the unit cell after the etch of the trench;
Figure 5 is a perspective view of the unit cell shown in Fig 4;
Figure 6 is the mask associated with the deposition of sacrificial photoresist shown in Figure 7;
Figure 7 shows the unit cell after the deposition of sacrificial photoresist trench, with partial enlargements of the gaps between the edges of the sacrificial material and the side walls of the trench;
Figure 8 is a perspective of the unit cell shown in Fig 7; Figure 9 shows the unit cell following the reflow of the sacrificial photoresist to close the gaps along the side walls of the trench;
Figure 10 is a perspective of the unit cell shown in Fig 9;
Figure 11 is a section view showing the deposition of the heater material layer;
Figure 12 is a perspective of the unit cell shown in Fig 11 ;
Figure 13 is the mask associated with the metal etch of the heater material shown in Figure 14;
Figure 14 is a section view showing the metal etch to shape the heater actuators;
Figure 15 is a perspective of the unit cell shown in Fig 14;
Figure 16 is the mask associated with the etch shown in Fig 17;
Figure 17 shows the deposition of the photoresist layer and subsequent etch of the ink inlet to the passivation layer on top of the CMOS drive layers;
Figure 18 is a perspective of the unit cell shown in Fig 17;
Figure 19 shows the oxide etch through the passivation and CMOS layers to the underlying silicon wafer;
Figure 20 is a perspective of the unit cell shown in Fig 19;
Figure 21 is the deep anisotropic etch of the ink inlet into the silicon wafer;
Figure 22 is a perspective of the unit cell shown in Fig 21;
Figure 23 is the mask associated with the photoresist etch shown in Fig 24;
Figure 24 shows the photoresist etch to form openings for the chamber roof and side walls;
Figure 25 is a perspective of the unit cell shown in Fig 24; Figure 26 shows the deposition of the side wall and risk material;
Figure 27 is a perspective of the unit cell shown in Fig. 26;
Figure 28 is the mask associated with the nozzle rim etch shown in Fig 29;
Figure 29 shows the etch of the roof layer to form the nozzle aperture rim;
Figure 30 is a perspective of the unit cell shown in Fig 29;
Figure 31 is the mask associated with the nozzle aperture etch shown in Fig 32;
Figure 32 shows the etch of the roof material to form the elliptical nozzle apertures;
Figure 33 is a perspective of the unit cell shown in Fig 32;
Figure 34 shows the oxygen plasma release etch of the first and second sacrificial layers;
Figure 35 is a perspective of the unit cell shown in Fig 34;
Figure 36 shows the unit cell after the release etch, as well as the opposing side of the wafer;
Figure 37 is a perspective of the unit cell shown in Fig 36;
Figure 38 is the mask associated with the reverse etch shown in Fig. 39;
Figure 39 shows the reverse etch of the ink supply channel into the wafer;
Figure 40 is a perspective of unit cell shown in Fig 39;
Figure 41 shows the thinning of the wafer by backside etching;
Figure 42 is a perspective of the unit cell shown in Fig 41;
Figure 43 is a partial perspective of the array of nozzles on the printhead according to the present invention; Figure 44 shows the plan view of a unit cell;
Figure 45 shows a perspective of the unit cell shown in Fig 44;
Figure 46 is schematic plan view of two unit cells with the roof layer removed but certain roof layer features shown in outline only;
Figure 47 is schematic plan view of two unit cells with the roof layer removed but the nozzle openings shown in outline only;
Figure 48 is a partial schematic plan view of unit cells with ink inlet apertures in the sidewall of the chambers;
Figure 49 is schematic plan view of a unit cells with the roof layer removed but the nozzle openings shown in outline only;
Figure 50 is a partial plan view of the nozzle plate with stiction reducing formations and a particle of paper dust;
Figure 51 is a partial plan view of the nozzle plate with residual ink gutters;
Figure 52 is a partial section view showing the deposition of SACl photoresist in accordance with prior art techniques used to avoid stringers;
Figure 53 is a partial section view showing the depositon of a layer of heater material onto the SACl photoresist scaffold deposited in Figure 52; and,
Figure 54 is a partial schematic plan view of a unit cell with multiple nozzles and actuators in each of the chambers.
Detailed Description of the Preferred Embodiments
In the description than follows, corresponding reference numerals relate to corresponding parts. For convenience, the features indicated by each reference numeral are listed below.
MNN MPN Series Parts List 1. Nozzle Unit Cell
2. Silicon Wafer
3. Topmost Aluminium Metal Layer in the CMOS metal layers
4. Passivation Layer
5. CVD Oxide Layer
6. Ink Inlet Opening in Topmost Aluminium Metal Layer 3.
7. Pit Opening in Topmost Aluminium Metal Layer 3.
8. Pit
9. Electrodes
10. SACl Photoresist Layer
11. Heater Material (TiAIN)
12. Thermal Actuator
13. Photoresist Layer
14. Ink Inlet Opening Etched Through Photo Resist Layer
15. Ink Inlet Passage
16. S AC2 Photoresist Layer
17. Chamber Side Wall Openings
18. Front Channel Priming Feature
19. Barrier Formation at Ink Inlet
20. Chamber Roof Layer
21. Roof
22. Sidewalls
23. Ink Conduit
24. Nozzle Chambers
25. Elliptical Nozzle Rim
25(a) Inner Lip
25(b) Outer Lip
26. Nozzle Aperture
27. Ink Supply Channel
28. Contacts
29. Heater Element.
30. Bubble cage
32. bubble retention structure
34. ink permeable structure
36. bleed hole
38. ink chamber 40. dual row filter
42. paper dust
44. ink gutters
46. gap between SACl and trench sidewall
48. trench sidewall
50. raised lip of SACl around edge of trench
52. thinner inclined section of heater material
54. cold spot between series connected heater elements
56. nozzle plate
58. columnar projections
60. sidewall ink opening
62. ink refill opening
MEMS Manufacturing Process
The MEMS manufacturing process builds up nozzle structures on a silicon wafer after the completion of CMOS processing. Figure 2 is a cutaway perspective view of a nozzle unit cell 100 after the completion of CMOS processing and before MEMS processing.
During CMOS processing of the wafer, four metal layers are deposited onto a silicon wafer 2, with the metal layers being interspersed between interlayer dielectric (ILD) layers. The four metal layers are referred to as Ml , M2, M3 and M4 layers and are built up sequentially on the wafer during CMOS processing. These CMOS layers provide all the drive circuitry and logic for operating the printhead.
In the completed printhead, each heater element actuator is connected to the CMOS via a pair of electrodes defined in the outermost M4 layer. Hence, the M4 CMOS layer is the foundation for subsequent MEMS processing of the wafer. The M4 layer also defines bonding pads along a longitudinal edge of each printhead integrated circuit. These bonding pads (not shown) allow the CMOS to be connected to a microprocessor via wire bonds extending from the bonding pads.
Figures 1 and 2 show the aluminium M4 layer 3 having a passivation layer 4 deposited thereon. (Only MEMS features of the M4 layer are shown in these Figures; the main CMOS features of the M4 layer are positioned outside the nozzle unit cell). The M4 layer 3 has a thickness of 1 micron and is itself deposited on a 2 micron layer of CVD oxide 5. As shown in Figures 1 and 2, the M4 layer 3 has an ink inlet opening 6 and pit openings 7. These openings define the positions of the ink inlet and pits formed subsequently in the MEMS process. Before MEMS processing of the unit cell 1 begins, bonding pads along a longitudinal edge of each printhead integrated circuit are defined by etching through the passivation layer 4. This etch reveals the M4 layer 3 at the bonding pad positions. The nozzle unit cell 1 is completely masked with photoresist for this step and, hence, is unaffected by the etch.
Turning to Figures 3 to 5, the first stage of MEMS processing etches a pit 8 through the passivation layer 4 and the CVD oxide layer 5. This etch is defined using a layer of photoresist (not shown) exposed by the dark tone pit mask shown in Figure 3. The pit 8 has a depth of 2 microns, as measured from the top of the M4 layer 3. At the same time as etching the pit 8, electrodes 9 are defined on either side of the pit by partially revealing the M4 layer 3 through the passivation layer 4. Ih the completed nozzle, a heater element is suspended across the pit 8 between the electrodes 9.
In the next step (Figures 6 to 8), the pit 8 is filled with a first sacrificial layer ("SACl") of photoresist 10. A 2 micron layer of high viscosity photoresist is first spun onto the wafer and then exposed using the dark tone mask shown in Figure 6. The SACl photoresist 10 forms a scaffold for subsequent deposition of the heater material across the electrodes 9 on either side of the pit 8. Consequently, it is important the SACl photoresist 10 has a planar upper surface that is flush with the upper surface of the electrodes 9. At the same time, the SACl photoresist must completely fill the pit 8 to avoid 'stringers' of conductive heater material extending across the pit and shorting out the electrodes 9.
Typically, when filling trenches with photoresist, it is necessary to expose the photoresist outside the perimeter of the trench in order to ensure that photoresist fills against the walls of the trench and, therefore, avoid 'stringers' in subsequent deposition steps. However, this technique results in a raised (or spiked) rim of photoresist around the perimeter of the trench. This is undesirable because in a subsequent deposition step, material is deposited unevenly onto the raised rim — vertical or angled surfaces on the rim will receive less deposited material than the horizontal planar surface of the photoresist filling the trench. The result is 'resistance hotspots' in regions where material is thinly deposited.
As shown in Figure 7, the present process deliberately exposes the SACl photoresist 10 inside the perimeter walls of the pit 8 (e.g. within 0.5 microns) using the mask shown in Figure 6. This ensures a planar upper surface of the SACl photoresist 10 and avoids any spiked regions of photoresist around the perimeter rim of the pit 8. After exposure of the SACl photoresist 10, the photoresist is reflowed by heating. Reflowing the photoresist allows it to flow to the walls of the pit 8, filling it exactly. Figures 9 and 10 show the SACl photoresist 10 after reflow. The photoresist has a planar upper surface and meets flush with the upper surface of the M4 layer 3, which forms the electrodes 9. Following reflow, the SACl photoresist 10 is U.V. cured and/or hardbaked to avoid any reflow during the subsequent deposition step of heater material.
Figures 11 and 12 show the unit cell after deposition of the 0.5 microns of heater material 11 onto the SACl photoresist 10. Due to the reflow process described above, the heater material 11 is deposited evenly and in a planar layer over the electrodes 9 and the SACl photoresist 10. The heater material may be comprised of any suitable conductive material, such as TiAl, TiN, TiAlN, TiAlSiN etc. A typical heater material deposition process may involve sequential deposition of a 100 A seed layer of TiAl, a 2500 A layer of TiAlN, a further 100 A seed layer of TiAl and finally a further 2500 A layer of TiAlN.
Referring to Figures 13 to 15, in the next step, the layer of heater material 11 is etched to define the thermal actuator 12. Each actuator 12 has contacts 28 that establish an electrical connection to respective electrodes 9 on either side of the SACl photoresist 10. A heater element 29 spans between its corresponding contacts 28.
This etch is defined by a layer of photoresist (not shown) exposed using the dark tone mask shown in Figure 13. As shown in Figure 15, the heater element 12 is a linear beam spanning between the pair of electrodes 9. However, the heater element 12 may alternatively adopt other configurations, such as those described in Applicant's US Patent No. 6,755,509, the content of which is herein incorporated by reference. For example, heater element 29 configurations having a central void may be advantageous for minimizing the deleterious effects of cavitation forces on the heater material when a bubble collapses during ink ejection. Other forms of cavitation protection may be adopted such as 'bubble venting' and the use of self passivating materials. These cavitation management techniques are discussed in detail in US patent application (our docket MTCOOlUS).
In the next sequence of steps, an ink inlet for the nozzle is etched through the passivation layer 4, the oxide layer 5 and the silicon wafer 2. During CMOS processing, each of the metal layers had an ink inlet opening (see, for example, opening 6 in the M4 layer 3 in Figure 1) etched therethrough in preparation for this ink inlet etch. These metal layers, together with the interspersed ILD layers, form a seal ring for the ink inlet, preventing ink from seeping into the CMOS layers. Referring to Figures 16 to 18, a relatively thick layer of photoresist 13 is spun onto the wafer and exposed using the dark tone mask shown in Figure 16. The thickness of photoresist 13 required will depend on the selectivity of the deep reactive ion etch (DRIE) used to etch the ink inlet. With an ink inlet opening 14 defined in the photoresist 13, the wafer is ready for the subsequent etch steps.
In the first etch step (Figures 19 and 20), the dielectric layers (passivation layer 4 and oxide layer 5) are etched through to the silicon wafer below. Any standard oxide etch {e.g. O2ZC4F8 plasma) may be used.
In the second etch step (Figures 21 and 22), an ink inlet 15 is etched through the silicon wafer 2 to a depth of 25 microns, using the same photoresist mask 13. Any standard anisotropic DREE, such as the Bosch etch (see US Patent Nos. 6,501,893 and 6,284,148) may be used for this etch. Following etching of the ink inlet 15, the photoresist layer 13 is removed by plasma ashing.
In the next step, the ink inlet 15 is plugged with photoresist and a second sacrificial layer ("SAC2") of photoresist 16 is built up on top of the SACl photoresist 10 and passivation layer 4. The SAC2 photoresist 16 will serve as a scaffold for subsequent deposition of roof material, which forms a roof and sidewalls for each nozzle chamber. Referring to Figures 23 to 25, a ~ 6 micron layer of high viscosity photoresist is spun onto the wafer and exposed using the dark tone mask shown in Figure 23.
As shown in Figures 23 and 25, the mask exposes sidewall openings 17 in the SAC2 photoresist 16 corresponding to the positions of chamber sidewalls and sidewalls for an ink conduit. In addition, openings 18 and 19 are exposed adjacent the plugged inlet 15 and nozzle chamber entrance respectively. These openings 18 and 19 will be filled with roof material in the subsequent roof deposition step and provide unique advantages in the present nozzle design. Specifically, the openings 18 filled with roof material act as priming features, which assist in drawing ink from the inlet 15 into each nozzle chamber. This is described in greater detail below. The openings 19 filled with roof material act as filter structures and fluidic cross talk barriers. These help prevent air bubbles from entering the nozzle chambers and diffuses pressure pulses generated by the thermal actuator 12.
Referring to Figures 26 and 27, the next stage deposits 3 microns of roof material 20 onto the SAC2 photoresist 16 by PECVD. The roof material 20 fills the openings 17, 18 and 19 in the SAC2 photoresist 16 to form nozzle chambers 24 having a roof 21 and sidewalls 22. An ink conduit 23 for supplying ink into each nozzle chamber is also formed during deposition of the roof material 20. In addition, any priming features and filter structures (not shown in Figures 26 and 27) are formed at the same time. The roofs 21, each corresponding to a respective nozzle chamber 24, span across adjacent nozzle chambers in a row to form a continuous nozzle plate. The roof material 20 may be comprised of any suitable material, such as silicon nitride, silicon oxide, silicon oxynitride, aluminium nitride etc.
Referring to Figures 28 to 30, the next stage defines an elliptical nozzle rim 25 in the roof 21 by etching away 2 microns of roof material 20. This etch is defined using a layer of photoresist (not shown) exposed by the dark tone rim mask shown in Figure 28. The elliptical rim 25 comprises two coaxial rim lips 25a and 25b, positioned over their respective thermal actuator 12.
Referring to Figures 31 to 33, the next stage defines an elliptical nozzle aperture 26 in the roof 21 by etching all the way through the remaining roof material 20, which is bounded by the rim 25. This etch is defined using a layer of photoresist (not shown) exposed by the dark tone roof mask shown in Figure 31. The elliptical nozzle aperture 26 is positioned over the thermal actuator 12, as shown in Figure 33.
With all the MEMS nozzle features now folly formed, the next stage removes the SACl and SAC2 photoresist layers 10 and 16 by O2 plasma ashing (Figures 34 to 35). After ashing, the thermal actuator 12 is suspended in a single plane over the pit 8. The coplanar deposition of the contacts 28 and the heater element 29 provides an efficient electrical connection with the electrodes 9.
Figures 36 and 37 show the entire thickness (150 microns) of the silicon wafer 2 after ashing the SACl and SAC2 photoresist layers 10 and 16.
Referring to Figures 38 to 40, once frontside MEMS processing of the wafer is completed, ink supply channels 27 are etched from the backside of the wafer to meet with the ink inlets 15 using a standard anisotropic DRIE. This backside etch is defined using a layer of photoresist (not shown) exposed by the dark tone mask shown in Figure 38. The ink supply channel 27 makes a fluidic connection between the backside of the wafer and the ink inlets 15.
Finally, and referring to Figures 41 and 42, the wafer is thinned 135 microns by backside etching. Figure 43 shows three adjacent rows of nozzles in a cutaway perspective view of a completed printhead integrated circuit. Each row of nozzles has a respective ink supply channel 27 extending along its length and supplying ink to a plurality of ink inlets 15 in each row. The ink inlets, in turn, supply ink to the ink conduit 23 for each row, with each nozzle chamber receiving ink from a common ink conduit for that row. Features and Advantages of Particular Embodiments
Discussed below, under appropriate sub-headings, are certain specific features of embodiments of the invention, and the advantages of these features. The features are to be considered in relation to all of the drawings pertaining to the present invention unless the context specifically excludes certain drawings, and relates to those drawings specifically referred to.
Low Loss Electrodes As shown in Figures 41 and 42, the heater element 29 is suspended within the chamber. This ensures that the heater element is immersed in ink when the chamber is primed. Completely immersing the heater element in ink dramatically improves the printhead efficiency. Much less heat dissipates into the underlying wafer substrate so more of the input energy is used to generate the bubble that ejects the ink.
To suspend the heater element, the contacts may be used to support the element at its raised position. Essentially, the contacts at either end of the heater element can have vertical or inclined sections to connect the respective electrodes on the CMOS drive to the element at an elevated position. However, heater material deposited on vertical or inclined surfaces is thinner than on horizontal surfaces. To avoid undesirable resistive losses from the thinner sections, the contact portion of the thermal actuator needs to be relatively large. Larger contacts occupy a significant area of the wafer surface and limit the nozzle packing density.
To immerse the heater, the present invention etches a pit or trench 8 between the electrodes 9 to drop the level of the chamber floor. As discussed above, a layer of sacrificial photoresist (SAC) 10 (see Figure 9) is deposited in the trench to provide a scaffold for the heater element. However, depositing SAC 10 in the trench 8 and simply covering it with a layer of heater material, can lead to stringers forming in the gaps 46 between the SAC 10 and the sidewalls 48 of the trench 8 (as previously described in relation to Figure 7). The gaps form because it is difficult to precisely match the mask with the sides of the trench 8. Usually, when the masked photoresist is exposed, the gaps 46 form between the sides of the pit and the SAC. When the heater material layer is deposited, it fills these gaps to form 'stringers' (as they are known). The stringers remain in the trench 8 after the metal etch (that shapes the heater element) and the release etch (to finally remove the SAC). The stringers can short circuit the heater so that it fails to generate a bubble.
Turning now to Figure 52 and 53, the 'traditional' technique for avoiding stringers is illustrated. By making the UV mask that exposes the SAC slightly bigger than the trench 8, the SAC 10 will be deposited over the side walls 48 so that no gaps form. Unfortunately, this produces a raised lip
50 around top of the trench. When the heater material layer 11 is deposited (see Figure 53), it is thinner on the vertical or inclined surfaces 52 of the lip 50. After the metal etch and release etch, these thin lip formations 52 remain and cause 'hotspots' because the localized thinning increases resistance. These hotspots affect the operation of the heater and typically reduce heater life.
As discussed above, the Applicant has found that reflowing the SAC 10 closes the gaps 46 so that the scaffold between the electrodes 9 is completely fiat. This allows the entire thermal actuator 12 to be planar. The planar structure of the thermal actuator, with contacts directly deposited onto the CMOS electrodes 9 and suspended heater element 29, avoids hotspots caused by vertical or inclined surfaces so that the contacts can be much smaller structures without acceptable increases in resistive losses. Low resistive losses preserves the efficient operation of a suspended heater element and the small contact size is convenient for close nozzle packing on the printhead.
Multiple Nozzles for each Chamber
Referring to Figure 49, the unit cell shown has two separate ink chambers 38, each chamber having heater element 29 extending between respective pairs of contacts 28. Ink permeable structures 34 are positioned in the ink refill openings so that ink can enter the chambers, but upon actuation, the structures 34 provide enough hydraulic resistance to reduce any reverse flow or fluidic cross talk to an acceptable level.
Ink is fed from the reverse side of the wafer through the ink inlet 15. Priming features 18 extend into the inlet opening so that an ink meniscus does not pin itself to the peripheral edge of the opening and stop the ink flow. Ink from the inlet 15 fills the lateral ink conduit 23 which supplies both chambers 38 of the unit cell.
Instead of a single nozzle per chamber, each chamber 38 has two nozzles 25. When the heater element 29 actuates (forms a bubble), two drops of ink are ejected; one from each nozzle 25. Each individual drop of ink has less volume than the single drop ejected if the chamber had only one nozzle. By ejecting multiple drops from a single chamber simultaneously improves the print quality.
With every nozzle, there is a degree of misdirection in the ejected drop. Depending on the degree of misdirection, this can be detrimental to print quality. By giving the chamber multiple nozzles, each nozzle ejects drops of smaller volume, and having different misdirections. Several small drops misdirected in different directions are less detrimental to print quality than a single relatively large misdirected drop. The Applicant has found that the eye averages the misdirections of each small drop and effectively 'sees' a dot from a single drop with a significantly less overall misdirection.
A multi nozzle chamber can also eject drops more efficiently than a single nozzle chamber. The heater element 29 is an elongate suspended beam of TiAlN and the bubble it forms is likewise elongated. The pressure pulse created by an elongate bubble will cause ink to eject through a centrally disposed nozzle. However, some of the energy from the pressure pulse is dissipated in hydraulic losses associated with the mismatch between the geometry of the bubble and that of the nozzle.
Spacing several nozzles 25 along the length of the heater element 29 reduces the geometric discrepancy between the bubble shape and the nozzle configuration through which the ink ejects. This in turn reduces hydraulic resistance to ink ejection and thereby improves printhead efficiency.
Ink Chamber Re-Filled Via Adjacent Ink Chamber
Referring to Figure 46, two opposing unit cells are shown. In this embodiment, unit cell has four ink chambers 38. The chambers are defined by the sidewalls 22 and the ink permeable structures 34. Each chamber has its own heater element 29. The heater elements 29 are arranged in pairs that are connected in series. Between each pair is 'cold spot' 54 with lower resistance and or greater heat sinking. This ensures that bubbles do not nucleate at the cold spots 54 and thus the cold spots become the common contact between the outer contacts 28 for each heater element pair.
The ink permeable structures 34 allow ink to refill the chambers 38 after drop ejection but baffle the pressure pulse from each heater element 29 to reduce the fluidic cross talk between adjacent chambers. It will be appreciated that this embodiment has many parallels with that shown in Figure 49 discussed above. However, the present embodiment effectively divides the relatively long chambers of Figure 49 into two separate chambers. This further aligns the geometry of the bubble formed by the heater element 29 with the shape of the nozzle 25 to reduce hydraulic losses during drop ejection. This is achieved without reducing the nozzle density but it does add some complexity to the fabrication process.
The conduits (ink inlets 15 and supply conduits 23) for distributing ink to every ink chamber in the array can occupy a significant proportion of the wafer area. This can be a limiting factor for nozzle density on the printhead. By making some ink chambers part of the ink flow path to other ink chambers, while keeping each chamber sufficiently free of fluidic cross talk, reduces the amount of wafer area lost to ink supply conduits.
Ink Chamber with Multiple Actuators and Respective Nozzles
Referring to Figure 54, the unit cell shown has two chambers 38; each chamber has two heater elements 29 and two nozzles 25. The effective reduction in drop misdirection by using multiple nozzles per chamber is discussed above in relation to the embodiment shown in Figure 49. The additional benefits of dividing a single elongate chamber into separate chambers, each with their own actuators, is described above with reference to the embodiment shown in Figure 46. The present embodiment uses multiple nozzles and multiple actuators in each chamber to achieve much of the advantages of the Figure 46 embodiment with a markedly less complicated design. With a simplified design, the overall dimensions of the unit cell are reduced thereby permitting greater nozzle densities. In the embodiment shown, the footprint of the unit cell is 64μm long by 16μm wide.
The ink permeable structure 34 is a single column at the ink refill opening to each chamber 38 instead of three spaced columns as with the Figure 46 embodiment. The single column has a cross section profiled to be less resistive to refill flow, but more resistive to sudden back flow from the actuation pressure pulse. Both heater elements in each chamber can be deposited simultaneously, together with the contacts 28 and the cold spot feature 54. Both chambers 38 are supplied with ink from a common ink inlet 15 and supply conduit 23. These features also allow the footprint to be reduced and they are discussed in more detail below. The priming features 18 have been made integral with one of the chamber sidewalls 22 and a wall ink conduit 23. The dual purpose nature of these features simplifies the fabrication and helps to keep the design compact.
Multiple Chambers and Multiple Nozzles for each Drive Circuit
In Figure 54, the actuators are connected in series and therefore fire in unison from the same drive signal to simplify the CMOS drive circuitry. In the Figure 46 unit cell, actuators in adjacent nozzles are connected in series within the same drive circuit. Of course, the actuators in adjacent chambers could also be connected in parallel. In contrast, were the actuators hi each chamber to be in separate circuits, the CMOS drive circuitry would be more complex and the dimensions of the unit cell footprint would increase. In printhead designs where the drop misdirection is addressed by substituting multiple smaller drops, combining several actuators and their respective nozzles into a common drive circuit is an efficient implementation both in terms of printhead IC fabrication and nozzles density. High Density Thermal InkJet Printhead
Reduction in the unit cell width enables the printhead to have nozzles patterns that previously would have required the nozzle density to be reduced. Of course, a lower nozzle density has a corresponding influence on printhead size and/or print quality.
Traditionally, the nozzle rows are arranged in parrs with the actuators for each row extending in opposite directions. The rows are staggered with respect to each other so that the printing resolution (dots per inch) is twice the nozzle pitch (nozzles per inch) along each row. By configuring the components of the unit cell such that the overall width of the unit is reduced, the same number of nozzles can be arranged into a single row instead of two staggered and opposing rows without sacrificing any print resolution (d.p.i.). The embodiments shown in the accompanying figures achieve a nozzle pitch of more than 1000 nozzles per inch in each linear row. At this nozzle pitch, the print resolution of the printhead is better than photographic (1600 dpi) when two opposing staggered rows are considered, and there is sufficient capacity for nozzle redundancy, dead nozzle compensation and so on which ensures the operation life of the printhead remains satisfactory. As discussed above, the embodiment shown in Figure 54 has a footprint that is 16μm wide and therefore the nozzle pitch along one row is about 1600 nozzles per inch. Accordingly, two offset staggered rows yield a resolution of about 3200 d.p.i.
With the realisation of the particular benefits associated with a narrower unit cell, the Applicant has focussed on identifying and combining a number of features to reduce the relevant dimensions of structures in the printhead. For example, elliptical nozzles, shifting the ink inlet from the chamber, finer geometry logic and shorter drive FETs (field effect transistors) are features developed by the Applicant to derive some of the embodiments shown. Each contributing feature necessitated a departure from conventional wisdom in the field, such as reducing the FET drive voltage from the widely used traditional 5V to 2.5V in order to decrease transistor length.
Reduced Stiction Printhead Surface
Static friction, or "stiction" as it has become known, allows dust particles to "stick" to nozzle plates and thereby clog nozzles. Figure 50 shows a portion of the nozzle plate 56. For clarity, the nozzle apertures 26 and the nozzle rims 25 are also shown. The exterior surface of the nozzle plate is patterned with columnar projections 58 extending a short distance from the plate surface. The nozzle plate could also be patterned with other surface formations such as closely spaced ridges, corrugations or bumps. However, it is easy to create a suitable UV mask for the pattern columnar projections shown, and it is a simple matter to etch the columns into the exterior surface.
By reducing the co-efficient of static friction, there is less likelihood that paper dust or other contaminants will clog the nozzles in the nozzle plate. Patterning the exterior of the nozzle plate with raised formations limits the surface area that dust particles contact. If the particles can only contact the outer extremities of each formation, the friction between the particles and the nozzle plate is minimal so attachment is much less likely. If the particles do attach, they are more likely to be removed by printhead maintenance cycles.
Inlet Priming Feature
Referring to Figure 47, two unit cells are shown extending in opposite directions to each other. The ink inlet passage 15 supplies ink to the four chambers 38 via the lateral ink conduit 23. Distributing ink through micron-scale conduits, such as the ink inlet 15, to individual MEMS nozzles in an inkjet printhead is complicated by factors that do not arise in macro-scale flow. A meniscus can form and, depending on the geometry of the aperture, it can 'pin' itself to the lip of the aperture quite strongly. This can be useful in printheads, such as bleed holes that vent trapped air bubbles but retain the ink, but it can also be problematic if stops ink flow to some chambers. This will most likely occur when initially priming the printhead with ink. If the ink meniscus pins at the ink inlet opening, the chambers supplied by that inlet will stay unprimed.
To guard against this, two priming features 18 are formed so that they extend through the plane of the inlet aperture 15. The priming features 18 are columns extending from the interior of the nozzle plate (not shown) to the periphery of the inlet 15. A part of each column 18 is within the periphery so that the surface tension of an ink meniscus at the ink inlet will form at the priming features 18 so as to draw the ink out of the inlet. This 'unpins' the meniscus from that section of the periphery and the flow toward the ink chambers.
The priming features 18 can take many forms, as long as they present a surface that extends transverse to the plane of the aperture. Furthermore, the priming feature can be an integral part of other nozzles features as shown in Figure 54. Side Entry Ink Chamber
Referring to Figure 48, several adjacent unit cells are shown. In this embodiment, the elongate heater elements 29 extend parallel to the ink distribution conduit 23. Accordingly, the elongate ink chambers 38 are likewise aligned with the ink conduit 23. Sidewall openings 60 connect the chambers 38 to the ink conduit 23. Configuring the ink chambers so that they have side inlets reduces the ink refill times. The inlets are wider and therefore refill flow rates are higher. The sidewall openings 60 have ink permeable structures 34 to keep fluidic cross talk to an acceptable level. Inlet Filter for Ink Chamber
Referring again to Figure 47, the ink refill opening to each chamber 38 has a filter structure 40 to trap air bubbles or other contaminants. Air bubbles and solid contaminants in ink are detrimental to the MEMS nozzle structures. The solid contaminants can obvious clog the nozzle openings, while air bubbles, being highly compressible, can absorb the pressure pulse from the actuator if they get trapped in the ink chamber. This effectively disables the ejection of ink from the affected nozzle. By providing a filter structure 40 in the form of rows of obstructions extending transverse to the flow direction through the opening, each row being spaced such that they are out of registration with the obstructions in an adjacent row with respect to the flow direction, the contaminants are not likely to enter the chamber 38 while the ink refill flow rate is not overly retarded. The rows are offset with respect to each other and the induced turbulence has minimal effect on the nozzle refill rate but the air bubbles or other contaminants follow a relatively tortuous flow path which increases the chance of them being retained by the obstructions 40. The embodiment shown uses two rows of obstructions 40 in the form of columns extending between the wafer substrate and the nozzle plate.
Intercolour Surface Barriers in Multi Colour InkJet Printhead
Turning now to Figure 51, the exterior surface of the nozzle 56 is shown for a unit cell such as that shown in Figure 46 described above. The nozzle apertures 26 are positioned directly above the heater elements (not shown) and a series of square-edged ink gutters 44 are formed in the nozzle plate 56 above the ink conduit 23 (see Figure 46).
InkJet printers often have maintenance stations that cap the printhead when it's not in use. To remove excess ink from the nozzle plate, the capper can be disengaged so that it peels off the exterior surface of the nozzle plate. This promotes the formation of a meniscus between the capper surface and the exterior of the nozzle plate. Using contact angle hysteresis, which relates to the angle that the surface tension in the meniscus contacts the surface (for more detail, see the
Applicant's co-pending USSN (our docket FND007US) incorporated herein by reference), the majority of ink wetting the exterior of the nozzle plate can be collected and drawn along by the meniscus between the capper and nozzle plate. The ink is conveniently deposited as a large bead at the point where the capper fully disengages from the nozzle plate. Unfortunately, some ink remains on the nozzle plate. If the printhead is a multi-colour printhead, the residual ink left in or around a given nozzle aperture, may be a different colour than that ejected by the nozzle because the meniscus draws ink over the whole surface of the nozzle plate. The contamination of ink in one nozzle by ink from another nozzle can create visible artefacts in the print. Gutter formations 44 running transverse to the direction that the capper is peeled away from the nozzle plate will remove and retain some of the ink in the meniscus. While the gutters do not collect all the ink in the meniscus, they do significantly reduce the level of nozzle contamination of with different coloured ink. Bubble Trap
Air bubbles entrained in the ink are very bad for printhead operation. Air, or rather gas in general, is highly compressible and can absorb the pressure pulse from the actuator. If a trapped bubble simply compresses in response to the actuator, ink will not eject from the nozzle. Trapped bubbles can be purged from the printhead with a forced flow of ink, but the purged ink needs blotting and the forced flow could well introduce fresh bubbles.
The embodiment shown in Figure 46 has a bubble trap at the ink inlet 15. The trap is formed by a bubble retention structure 32 and a vent 36 formed in the roof layer. The bubble retention structure is a series of columns 32 spaced around the periphery of the inlet 15. As discussed above, the ink priming features 18 have a dual purpose and conveniently form part of the bubble retaining structure. In use, the ink permeable trap directs gas bubbles to the vent where they vent to atmosphere. By trapping the bubbles at the ink inlets and directing them to a small vent, they are effectively removed from the ink flow without any ink leakage. Multiple Ink Inlet Flow Paths Supplying ink to the nozzles via conduits extending from one side of the wafer to the other allows more of the wafer area (on the ink ejection side) to have nozzles instead of complex ink distribution systems. However, deep etched, micron-scale holes through a wafer are prone to clogging from contaminants or air bubbles. This starves the nozzle(s) supplied by the affected inlet.
As best shown in Figure 48, printheads according to the present invention have at least two ink inlets 15 supplying each chamber 38 via an ink conduit 23 between the nozzle plate and underlying wafer.
Introducing an ink conduit 23 that supplies several of the chambers 38, and is in itself supplied by several ink inlets 15, reduces the chance that nozzles will be starved of ink by inlet clogging. If one inlet 15 is clogged, the ink conduit will draw more ink from the other inlets in the wafer. Although the invention is described above with reference to specific embodiments, it will be understood by those skilled in the art that the invention may be embodied in many other forms.

Claims

CLAMS
1. A method of fabricating a suspended beam in a MEMS process, said method comprising the steps of:
(a) etching a pit in a substrate, said pit having a base and sidewalls; (b) depositing sacrificial material on a surface of said substrate so as to fill said pit;
(c) removing said sacrificial material from a perimeter region within said pit and from said substrate surface surrounding said pit;
(d) reflowing remaining sacrificial material within said pit such that said remaining sacrificial material contacts said sidewalls; (e) depositing beam material on said substrate surface and on said reflowed sacrificial material; and
(f) removing said reflowed sacrificial material to form said suspended beam.
2. The method of claim 1 , wherein said suspended beam is substantially planar.
3 The method of claim 1 , wherein all parts of said suspended beam have substantially the same thickness.
4. The method of claim 1 , wherein said suspended beam is an actuator for an inkjet nozzle.
5. The method of claim 4, wherein said actuator is a heater element.
6. The method of claim 5, wherein said heater element is suspended between a pair of electrodes.
7. The method of claim 1, wherein said substrate is a silicon wafer.
8. The method of claim 7, wherein said silicon wafer comprises at least one surface oxide layer.
9. The method of claim 1, wherein said sacrificial material is photoresist.
10. The method of claim 8, wherein said photoresist is removed by exposure through a mask followed by development.
11. The method of claim 1 , wherein said perimeter region comprises an area adjacent at least two of said sidewalls.
12. The method of claim 1 , wherein said perimeter region comprises an area adjacent all of said sidewalls.
13. The method of claim 1 , wherein removal of said sacrificial material from said perimeter region results in a space of less than 1 micron between said remaining sacrificial material and at least two of said sidewalls.
14. The method of claim 1 , wherein removal of said sacrificial material from said perimeter region results in a space of less than 1 micron between said remaining sacrificial material and all of said sidewalls.
15. The method of claim 1, wherein said reflowing is performed by heating said sacrificial material.
16. The method of claim 1 , wherein said sacrificial material is treated to prevent further reflow prior to deposition of beam material.
17. The method of claim 15, wherein said treatment comprises UV curing.
18. The method of claim 1 , wherein said beam material is etched into a predetermined configuration after deposition.
19. The method of claim 1 , wherein further MEMS process steps are performed after deposition of said beam material and prior to said removal of said reflowed sacrificial material.
20. The method of claim 18, wherein said further MEMS process steps comprise forming an inkjet nozzle containing said suspended beam.
EP05791165A 2005-10-10 2005-10-10 Method of fabricating suspended beam in a mems process Withdrawn EP1934133A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/AU2005/001565 WO2007041748A1 (en) 2005-10-10 2005-10-10 Method of fabricating suspended beam in a mems process

Publications (2)

Publication Number Publication Date
EP1934133A1 true EP1934133A1 (en) 2008-06-25
EP1934133A4 EP1934133A4 (en) 2012-09-26

Family

ID=37942188

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05791165A Withdrawn EP1934133A4 (en) 2005-10-10 2005-10-10 Method of fabricating suspended beam in a mems process

Country Status (5)

Country Link
EP (1) EP1934133A4 (en)
JP (1) JP4960965B2 (en)
KR (1) KR101000212B1 (en)
AU (1) AU2005337420B2 (en)
WO (1) WO2007041748A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7807336B2 (en) 2005-12-28 2010-10-05 Hynix Semiconductor Inc. Method for manufacturing semiconductor device
TWI687987B (en) * 2015-02-17 2020-03-11 愛爾蘭商滿捷特科技公司 Process for filling etched holes
US9744549B2 (en) * 2015-03-16 2017-08-29 The Procter & Gamble Company System and method for dispensing material

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294347A (en) * 1985-10-22 1987-04-30 Ricoh Seiki Kk Thermal ink jet printing head
DE4025619C2 (en) * 1990-08-13 1994-08-04 Siemens Ag Print element for a print head for the ink-jet process based on the bubble jet principle
JPH08219795A (en) * 1995-02-10 1996-08-30 Murata Mfg Co Ltd Angular velocity sensor
US6183067B1 (en) * 1997-01-21 2001-02-06 Agilent Technologies Inkjet printhead and fabrication method for integrating an actuator and firing chamber
JP3762172B2 (en) * 1998-12-03 2006-04-05 キヤノン株式会社 LIQUID DISCHARGE HEAD, HEAD CARTRIDGE WITH LIQUID DISCHARGE HEAD, LIQUID DISCHARGE DEVICE, AND METHOD FOR PRODUCING THE LIQUID DISCHARGE HEAD
JP3495649B2 (en) * 1999-06-28 2004-02-09 シャープ株式会社 Inkjet head
US6876046B2 (en) * 2002-02-07 2005-04-05 Superconductor Technologies, Inc. Stiction alleviation using passivation layer patterning
US6884729B2 (en) * 2002-02-11 2005-04-26 Cabot Microelectronics Corporation Global planarization method
US6672710B1 (en) 2002-11-23 2004-01-06 Silverbrook Research Pty Ltd Thermal ink jet printhead with symmetric bubble formation
US6755509B2 (en) * 2002-11-23 2004-06-29 Silverbrook Research Pty Ltd Thermal ink jet printhead with suspended beam heater
JP2004209723A (en) * 2002-12-27 2004-07-29 Canon Inc Droplet ejector

Also Published As

Publication number Publication date
AU2005337420B2 (en) 2009-10-29
JP2009511295A (en) 2009-03-19
JP4960965B2 (en) 2012-06-27
AU2005337420A1 (en) 2007-04-19
KR20080066781A (en) 2008-07-16
EP1934133A4 (en) 2012-09-26
KR101000212B1 (en) 2010-12-10
WO2007041748A1 (en) 2007-04-19

Similar Documents

Publication Publication Date Title
US7638349B2 (en) Substrate preparation method for a MEMS fabrication process
US7401910B2 (en) Inkjet printhead with bubble trap
US8322827B2 (en) Thermal inkjet printhead intergrated circuit with low resistive loss electrode connection
US20100208003A1 (en) Printhead with multiple heaters in each chamber
US20090213178A1 (en) Inkjet printhead with high nozzle density
US7794059B2 (en) Inkjet printhead nozzle with a patterned surface
US20100277558A1 (en) Inkjet printhead with bubble trap and air vents
US20090066751A1 (en) Inkjet printhead with ink priming assistance features
US7470010B2 (en) Inkjet printhead with multiple ink inlet flow paths
US7841086B2 (en) Method of fabricating inkjet printhead with projections patterned across nozzle plate
US7784912B2 (en) Printhead arrangement having nozzle assemblies with gutter formations
US7645026B2 (en) Inkjet printhead with multi-nozzle chambers
US8119019B2 (en) Method of fabricating filtered printhead ejection nozzle
US20080246815A1 (en) Nozzle assembly for a printhead arrangement with gutter formations to prevent nozzle contamination
AU2005337424B2 (en) Low loss electrode connection for inkjet printhead
AU2005337420B2 (en) Method of fabricating suspended beam in a mems process
US7857428B2 (en) Printhead with side entry ink chamber
US20070080132A1 (en) Method of fabricating inkjet nozzle chambers having sidewall entrance

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080319

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20120828

RIC1 Information provided on ipc code assigned before grant

Ipc: B81C 1/00 20060101AFI20120822BHEP

Ipc: B41J 2/16 20060101ALI20120822BHEP

Ipc: B41J 2/14 20060101ALI20120822BHEP

Ipc: B41J 2/05 20060101ALI20120822BHEP

17Q First examination report despatched

Effective date: 20120914

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20130326