EP1925036A4 - Nitride semiconductor light emitting device and production thereof - Google Patents

Nitride semiconductor light emitting device and production thereof

Info

Publication number
EP1925036A4
EP1925036A4 EP20060797950 EP06797950A EP1925036A4 EP 1925036 A4 EP1925036 A4 EP 1925036A4 EP 20060797950 EP20060797950 EP 20060797950 EP 06797950 A EP06797950 A EP 06797950A EP 1925036 A4 EP1925036 A4 EP 1925036A4
Authority
EP
European Patent Office
Prior art keywords
production
light emitting
emitting device
semiconductor light
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20060797950
Other languages
German (de)
French (fr)
Other versions
EP1925036B1 (en
EP1925036A1 (en
Inventor
Hiroshi Osawa
Takashi Hodota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005312819A external-priority patent/JP4202353B2/en
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of EP1925036A1 publication Critical patent/EP1925036A1/en
Publication of EP1925036A4 publication Critical patent/EP1925036A4/en
Application granted granted Critical
Publication of EP1925036B1 publication Critical patent/EP1925036B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
EP06797950.0A 2005-09-13 2006-09-07 Nitride semiconductor light emitting device and production method thereof Active EP1925036B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005265300 2005-09-13
US71873805P 2005-09-21 2005-09-21
JP2005312819A JP4202353B2 (en) 2005-09-13 2005-10-27 Nitride-based semiconductor light-emitting device and manufacturing method thereof
PCT/JP2006/318231 WO2007032421A1 (en) 2005-09-13 2006-09-07 Nitride semiconductor light emitting device and production thereof

Publications (3)

Publication Number Publication Date
EP1925036A1 EP1925036A1 (en) 2008-05-28
EP1925036A4 true EP1925036A4 (en) 2013-05-08
EP1925036B1 EP1925036B1 (en) 2016-04-13

Family

ID=37865005

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06797950.0A Active EP1925036B1 (en) 2005-09-13 2006-09-07 Nitride semiconductor light emitting device and production method thereof

Country Status (4)

Country Link
US (1) US7786489B2 (en)
EP (1) EP1925036B1 (en)
KR (1) KR100975711B1 (en)
WO (1) WO2007032421A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4939014B2 (en) * 2005-08-30 2012-05-23 国立大学法人徳島大学 Group III nitride semiconductor light emitting device and method for manufacturing group III nitride semiconductor light emitting device
US8097478B2 (en) 2007-06-29 2012-01-17 Showa Denko K.K. Method for producing light-emitting diode
KR100946523B1 (en) 2008-04-24 2010-03-11 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
DE102008035254A1 (en) * 2008-07-29 2010-02-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and optoelectronic component
JP2011151074A (en) * 2010-01-19 2011-08-04 Mitsubishi Electric Corp Method for manufacturing nitride semiconductor device
KR101039999B1 (en) * 2010-02-08 2011-06-09 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
TWI491066B (en) * 2010-06-07 2015-07-01 Hon Hai Prec Ind Co Ltd Led and method for manufacting the same
TWI528583B (en) * 2010-06-18 2016-04-01 鴻海精密工業股份有限公司 Led and method for manufacting the same
KR101289602B1 (en) * 2011-04-21 2013-07-24 영남대학교 산학협력단 Light emitting diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1385215A2 (en) * 2002-07-08 2004-01-28 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
JP2004047704A (en) * 2002-07-11 2004-02-12 Sharp Corp Method for manufacturing nitride semiconductor light emitting element and article therefor
WO2005029573A1 (en) * 2003-09-19 2005-03-31 Tinggi Technologies Private Limited Fabrication of semiconductor devices
US20050242365A1 (en) * 2004-04-28 2005-11-03 Yoo Myung C Vertical structure semiconductor devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11293493A (en) 1984-04-13 1999-10-26 Sony Corp Electroplating device
JP3511970B2 (en) 1995-06-15 2004-03-29 日亜化学工業株式会社 Nitride semiconductor light emitting device
JP4060511B2 (en) 2000-03-28 2008-03-12 パイオニア株式会社 Method for separating nitride semiconductor device
JP2002314138A (en) * 2001-04-09 2002-10-25 Toshiba Corp Light emitting device
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP4233268B2 (en) * 2002-04-23 2009-03-04 シャープ株式会社 Nitride-based semiconductor light-emitting device and manufacturing method thereof
CN100483612C (en) * 2003-06-04 2009-04-29 刘明哲 Method of fabricating vertical structure compound semiconductor devices
EP1521312A3 (en) * 2003-09-30 2008-01-16 Osram Opto Semiconductors GmbH Optoelectronic device having a metallised carrier
TWI232505B (en) * 2003-10-07 2005-05-11 Arima Optoelectronics Corp Manufacturing method of LED and its structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1385215A2 (en) * 2002-07-08 2004-01-28 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
JP2004047704A (en) * 2002-07-11 2004-02-12 Sharp Corp Method for manufacturing nitride semiconductor light emitting element and article therefor
WO2005029573A1 (en) * 2003-09-19 2005-03-31 Tinggi Technologies Private Limited Fabrication of semiconductor devices
US20050242365A1 (en) * 2004-04-28 2005-11-03 Yoo Myung C Vertical structure semiconductor devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007032421A1 *
WEISS K ET AL: "Development of different copper seed layers with respect to the copper electroplating process", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 50, no. 1-4, 1 January 2000 (2000-01-01), pages 433 - 440, XP004237698, ISSN: 0167-9317, DOI: 10.1016/S0167-9317(99)00312-3 *

Also Published As

Publication number Publication date
KR20080037720A (en) 2008-04-30
WO2007032421A1 (en) 2007-03-22
EP1925036B1 (en) 2016-04-13
US7786489B2 (en) 2010-08-31
EP1925036A1 (en) 2008-05-28
KR100975711B1 (en) 2010-08-12
US20090045433A1 (en) 2009-02-19

Similar Documents

Publication Publication Date Title
EP1772910A4 (en) Nitride semiconductor light emitting device
EP1746664A4 (en) Nitride semiconductor light emitting element
PL2546192T3 (en) Light emitting device including semiconductor nanocrystals
EP1854155A4 (en) Semiconductor light-emitting device
EP2043167A4 (en) Nitride semiconductor light emitting device and process for producing the same
GB0724781D0 (en) Substrate and semiconductor light emitting element
TWI371867B (en) Semiconductor light-emitting device
EP1708284A4 (en) Semiconductor light-emitting device
EP1854831A4 (en) Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member
EP1923924A4 (en) Semiconductor light emitting element and illuminating apparatus using same
EP1829122A4 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP1790017A4 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP1829120A4 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP1829119A4 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP1748470A4 (en) Iii nitride semiconductor crystal and manufacturing method thereof, iii nitride semiconductor device and manufacturing method thereof, and light emitting device
EP1829118A4 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP2006921A4 (en) GaN SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LAMP
EP2020690A4 (en) Semiconductor light emitting element and wafer
EP2038908A4 (en) Light emitting device including semiconductor nanocrystals
EP1829121A4 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP2164115A4 (en) Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
EP1959503A4 (en) Semiconductor light emitting element and method for manufacturing semiconductor light emitting element
EP1909336A4 (en) Light emitting device
EP1928029A4 (en) Light emitting device
EP1842398A4 (en) Light emitting device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080328

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: TOYODA GOSEI CO., LTD.

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602006048701

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0033000000

Ipc: H01L0033400000

A4 Supplementary search report drawn up and despatched

Effective date: 20130408

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/40 20100101AFI20130402BHEP

17Q First examination report despatched

Effective date: 20130507

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20151006

RIN1 Information on inventor provided before grant (corrected)

Inventor name: OSAWA, HIROSHI

Inventor name: HODOTA, TAKASHI

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 790977

Country of ref document: AT

Kind code of ref document: T

Effective date: 20160415

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602006048701

Country of ref document: DE

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 790977

Country of ref document: AT

Kind code of ref document: T

Effective date: 20160413

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20160413

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160816

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160714

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602006048701

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20170116

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20160907

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20170531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20160930

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20160930

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20160907

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20160930

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20160907

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20160907

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20060907

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20160413

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230802

Year of fee payment: 18