EP1917668A2 - Piezoelectric component having a magnetic layer - Google Patents
Piezoelectric component having a magnetic layerInfo
- Publication number
- EP1917668A2 EP1917668A2 EP06778276A EP06778276A EP1917668A2 EP 1917668 A2 EP1917668 A2 EP 1917668A2 EP 06778276 A EP06778276 A EP 06778276A EP 06778276 A EP06778276 A EP 06778276A EP 1917668 A2 EP1917668 A2 EP 1917668A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- thin film
- magnetic thin
- layer
- magnetic
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims description 37
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 19
- -1 rare earth manganate Chemical class 0.000 claims description 19
- 230000005294 ferromagnetic effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 2
- 230000005415 magnetization Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/193—Magnetic semiconductor compounds
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/472—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on lead titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
- C04B35/499—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides containing also titanates
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5027—Oxide ceramics in general; Specific oxide ceramics not covered by C04B41/5029 - C04B41/5051
- C04B41/5028—Manganates
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- C—CHEMISTRY; METALLURGY
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
- C04B2111/00422—Magnetic properties
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/407—Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the invention relates to the field of ceramics and relates to a piezoelectric component with a magnetic layer, which can be used for example as a resistance component, as a switching or control or storage element or as a sensor.
- the invention has for its object to provide a piezoelectric device with magnetic layer, with which the electrical and magnetic properties of the thin film (s) thereon can be modified by mechanical stretching.
- the term "epitaxial" is to be understood as meaning an ordered crystal growth with a fixed relationship between the crystal orientations of the layer and the substrate.
- the compounds are a single crystal or have a polycrystalline structure.
- a magnetic thin film having a different composition is present over one magnetic thin film, and / or two or more different magnetic thin films are alternately superimposed, and / or the magnetic thin films are separated by an insulator layer.
- the insulator layers are epitaxial.
- an intermediate layer is present between the substrate and the magnetic thin layer, wherein advantageously the intermediate layer is a conductive layer or a buffer layer and the intermediate layer is epitaxial.
- the magnetic thin film only partially covers the substrate.
- the magnetic thin film has a thickness of 3 nm to 50 nm.
- the device according to the invention consists of the compound Pb (Mgi / 3 Nb 2/3 ) O 3 -PbTiO 3 (PMN-PT) or Pb (Zn 1 Z 3 Nb 2 Z 3 ) O 3 -PbTiO 3 (PZN-PT), on which a magnetic, advantageously a ferromagnetic rare earth manganate thin film is deposited.
- the compounds PMN-PT or PZN-PT can be present as a single crystal or have a polycrystalline structure.
- the piezoelectric single crystals show ultra-large elongation values of up to 1.7% [S.- E. Park and TR Shrout, J. Appl. Phys. 82 1804 (1997)] and are therefore particularly useful.
- the magnetic thin film has grown epitaxially.
- the magnetic thin film is provided with contacts for supplying a constant current andfactsabgriffan Anlagenn.
- an electrode layer is applied on the side of the piezoelectric substrate facing away from the magnetic thin film.
- this changes its lattice constant by the inverse piezoelectric effect.
- the substrate expands parallel to the direction of the electric field and shrinks in the directions perpendicular thereto.
- the applied piezoelectric voltage the size of the deformation can be adjusted steplessly and reversibly. In this case, a hysteretic behavior can occur.
- a thin magnetic layer is present on the piezoelectric single crystal substrate. This is deformed as well as the crystal lattice of the single crystal substrate. The resulting biaxial crystal lattice distortion changes the electrical resistance, the size of the magnetization and the ferromagnetic order temperature of the layer. Due to the continuously adjustable lattice distortion of the piezoelectric substrate, these variables can therefore be infinitely and widely adjusted in contrast to the known components.
- the magnetic and in particular the rare earth manganate thin film is epitaxially grown on the piezoelectric substrate.
- the actual thickness of the magnetic thin film depends on the material used for the layer and the intended application in the practical implementation. It can be assumed that with a thickness of the magnetic thin layer in the range of 3 nm to 50 nm, particularly favorable property changes can be achieved and that the property changes become greater with decreasing thickness of the thin layer.
- Preferred materials are Lao, 7Sr 0 , 3 Mn ⁇ 3 or Lao, 8 Sr 0 , 2Mn ⁇ 3 .
- the device according to the invention has also been found that also changes the behavior of the resistance of the magnetic thin film in the magnetic field, the magnetoresistance, with applied piezoelectric voltage.
- the inverse piezoelectric effect of a single crystal or a polycrystalline structure of the compounds according to the invention is used to deform the crystal lattice of a thin magnetic layer thereon, an epitaxially grown ferromagnetic rare earth manganate thin film.
- electrical resistance and magnetic properties of the magnetic thin film can be influenced.
- the component according to the invention is thereby usable in particular for controlling an electric current, for switching a magnetization and as a sensor. Likewise, the use as a storage element is possible.
- the solution according to the invention it is possible to introduce infinitely controllable large biaxial tensile or compressive stresses in a magnetic thin film. Thereby, the crystal lattice of the magnetic thin film is deformed, thereby changing the electric and magnetic properties of the magnetic thin film. To further improve these property changes, an epitaxially grown magnetic thin film is used. Then, the device is usable for controlling electric currents, switching magnetizations and as a sensor.
- Fig. 1 the device according to the invention in a schematic representation.
- the rare earth manganate layer 2 consists of La 0 , 7Sr 0 , 3 MnO 3 and has a thickness from 30 nm up. It has been fabricated using a stoichiometric target by pulsed laser deposition in an atmosphere of 45 Pa oxygen.
- the lower electrode layer 3 is made of NiCr / Au.
- the rare earth manganate layer 2 is contacted with two current and voltage terminals 4 and 5, respectively.
- the rare earth manganate layer 2 and the lower electrode layer 3 are contacted by the terminals 6.
- the resistance of the rare earth manganate layer 2 changes.
- the resistance values were determined from the voltage values measured at the voltage tapping terminals 5 at a constant current flowing across the current tapping terminals 4.
- the resistance of R 227 ⁇ decreases by 9% when 500 V is applied to the piezoelectric substrate 1.
- the decrease in the resistance R is approximately proportional to the applied voltage 6.
- the change in resistance is reversible and also results when applying a voltage 6 with the opposite sign. At low voltages hysteretic behavior is evident.
- the magnetization of the rare earth manganate layer 2 changes upon application of a voltage 6.
- the increase is approximately proportional to the voltage 6, it is reversible and also results when applying a voltage 6 with the opposite sign. At low voltages hysteretic behavior is evident.
- the ferromagnetic order temperature Tc of the rare earth manganate layer 2 also changes upon application of a voltage 6.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005041416 | 2005-08-26 | ||
PCT/EP2006/065427 WO2007023131A2 (en) | 2005-08-26 | 2006-08-17 | Piezoelectric component having a magnetic layer |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1917668A2 true EP1917668A2 (en) | 2008-05-07 |
Family
ID=37771967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06778276A Ceased EP1917668A2 (en) | 2005-08-26 | 2006-08-17 | Piezoelectric component having a magnetic layer |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090220779A1 (en) |
EP (1) | EP1917668A2 (en) |
DE (1) | DE102006040277A1 (en) |
WO (1) | WO2007023131A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012058644A1 (en) * | 2010-10-28 | 2012-05-03 | Board Of Trustees Of Northern Illinois University | Rare-earth manganese oxides for gas separation and oxygen storage |
DE102011084649A1 (en) | 2011-10-17 | 2013-04-18 | Carl Zeiss Smt Gmbh | Mirror with piezoelectric substrate and optical arrangement with it |
JP6814916B2 (en) * | 2015-12-18 | 2021-01-20 | アドバンストマテリアルテクノロジーズ株式会社 | Method for manufacturing membrane structure, actuator, motor and membrane structure |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804907A (en) * | 1997-01-28 | 1998-09-08 | The Penn State Research Foundation | High strain actuator using ferroelectric single crystal |
JP2001509312A (en) * | 1997-01-28 | 2001-07-10 | ザ ペンステート リサーチファウンデーション | Relaxor ferroelectric single crystal for ultrasonic transducer |
JP4568926B2 (en) * | 1999-07-14 | 2010-10-27 | ソニー株式会社 | Magnetic functional element and magnetic recording apparatus |
US7060509B2 (en) * | 2001-04-12 | 2006-06-13 | Leibniz-Institut Fuer Festkoerper- Und Werkstoffforschung Dresden E.V. | Method for defining reference magnetizations in layer systems |
JP3902023B2 (en) * | 2002-02-19 | 2007-04-04 | セイコーエプソン株式会社 | Piezoelectric actuator, liquid droplet ejecting head, and liquid droplet ejecting apparatus using the same |
US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US7604895B2 (en) * | 2004-03-29 | 2009-10-20 | Lg Chem, Ltd. | Electrochemical cell with two types of separators |
SG124303A1 (en) * | 2005-01-18 | 2006-08-30 | Agency Science Tech & Res | Thin films of ferroelectric materials and a methodfor preparing same |
KR100674848B1 (en) * | 2005-04-01 | 2007-01-26 | 삼성전기주식회사 | High Capacitancy Metal-Ceramic-Polymer Dielectric Material And Preparing Method For Embedded Capacitor Using The Same |
-
2006
- 2006-08-17 DE DE102006040277A patent/DE102006040277A1/en not_active Withdrawn
- 2006-08-17 US US12/064,713 patent/US20090220779A1/en not_active Abandoned
- 2006-08-17 EP EP06778276A patent/EP1917668A2/en not_active Ceased
- 2006-08-17 WO PCT/EP2006/065427 patent/WO2007023131A2/en active Application Filing
Non-Patent Citations (1)
Title |
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See references of WO2007023131A3 * |
Also Published As
Publication number | Publication date |
---|---|
DE102006040277A1 (en) | 2007-03-01 |
WO2007023131A3 (en) | 2007-07-12 |
WO2007023131A2 (en) | 2007-03-01 |
US20090220779A1 (en) | 2009-09-03 |
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