EP1917667A2 - Hf terminating resistor having a planar layer structure - Google Patents

Hf terminating resistor having a planar layer structure

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Publication number
EP1917667A2
EP1917667A2 EP06776894A EP06776894A EP1917667A2 EP 1917667 A2 EP1917667 A2 EP 1917667A2 EP 06776894 A EP06776894 A EP 06776894A EP 06776894 A EP06776894 A EP 06776894A EP 1917667 A2 EP1917667 A2 EP 1917667A2
Authority
EP
European Patent Office
Prior art keywords
layer
conductor
ground contact
substrate
layer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06776894A
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German (de)
French (fr)
Other versions
EP1917667B1 (en
Inventor
Frank Weiss
Dietrich Zahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rosenberger Hochfrequenztechnik GmbH and Co KG
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Rosenberger Hochfrequenztechnik GmbH and Co KG
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Publication of EP1917667A2 publication Critical patent/EP1917667A2/en
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Publication of EP1917667B1 publication Critical patent/EP1917667B1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H01P1/268—Strip line terminations

Definitions

  • the present invention relates to an RF termination resistor having a planar layered structure comprising on a substrate a resistance layer for converting RF energy to heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact the input conductor track is electrically connected to a first end of the resistive layer and the grounding interconnect track is electrically connected to a second end of the resistive layer opposite the first end and at a ground contact end of the layered structure the grounding interconnect line forms the topmost layer of the layered structure according to the preamble of the claim 1.
  • the invention further relates to a method for producing a planar layer structure for an RF termination resistor, wherein on a substrate, a resistance layer for converting RF energy into heat, an input conductor to the Zuf the ground conductor is electrically connected to a first end of the resistive layer and the grounded interconnect is electrically connected to a second end of the resistive layer opposite the first end, according to the preamble of FIG Claim 6.
  • RF terminating resistors are used, for example, for adapting RF modules in the mobile and microwave radio range with very high transmission powers, for example for terminating a combiner or antenna output. Terminating resistors of increased power dissipation have large resistance structures in order to distribute the coupled RF power to this area. This works However, unfavorable to the reflection factor in broadband application, or the terminating resistor is used with the same reflection factors only in a narrower frequency band.
  • the invention has for its object to provide an RF termination of the o.g. Art and a method of o.g. Design such a way that the ground connection of the resistance structure of the substrate to the ground contact, such as a housing wall, on the one hand very short to obtain the most accurate adaptation of the characteristic impedance, but on the other hand is constructed so that there is still a good solder joint for can form the ground contact between the ground strip conductor and ground contact.
  • the ground strip conductor track is at least partially disposed on the resist layer.
  • the resistive layer is formed on the substrate and then the bulk insertion conductor is at least partially formed on the resistive layer.
  • the grounding conductor track is arranged on the substrate and has an extension extending in the direction of the first end of the resistance layer, which is arranged on the resistance layer.
  • a good and reliably producible electrical contact between the ground strip conductor and the ground contact is achieved in that an upper side facing away from the substrate of the bulk slab conductor in the region of the ground contact end of the layer structure, in which the ground strip conductor rests on the substrate, as well as in Extending portion of the extension in which the mass insertion conductor rests on the resistance layer in a surface.
  • the planar layer structure is arranged in a housing of electrically conductive material, wherein the ground contact is the housing.
  • the ground contact is arranged on a ground contact-side stimulus surface of the planar layer structure.
  • FIG. 2 shows the RF termination of FIG. 1 in a schematic sectional view
  • the preferred embodiment of an RF termination resistor comprises a resistance layer 10, an input conductor 12 and a grounding conductor 14.
  • the resistance layer 10, the input conductor 12 and the grounding conductor 14 are formed as respective layers on a substrate 16 and form a planar layer structure.
  • the input conductor 12 is electrically connected to a first end 18 of the resistive layer 10, and the grounding conductor 14 is electrically connected to a second end 20 of the resistive layer 10 opposite the first end 18.
  • the resistive layer 10 serves to convert RF energy to heat
  • the input trace 12 serves to deliver RF energy
  • the bulk launch trace 14 is for electrical connection to a ground contact 22 (FIG. 2).
  • the planar layer structure formed by the input conductor 12 (not shown in FIG. 2), the resistance layer 10 and the grounding conductor 14 is shown in more detail in FIG.
  • the ground contact 22 is arranged on the front side on a mas se se recognizede end of the layer structure and is for example a part of a housing.
  • This housing is made of an electrically conductive material and thereby also has good thermal conduction properties, so that the heat energy generated in the resistance layer 10 is dissipated via the housing to a heat sink.
  • the grounding conductor 14 provides electrical contact between the resistive layer 10 and the housing 22.
  • the grounding conductor track 14 is arranged at least partially on the resistance layer 10.
  • the mass Schußleiterbahn 14 arranged on the substrate 16.
  • Extending in the direction of the first end 18 of the resistance layer 10 is an extension 24 of the grounding conductor track 14 which is arranged on the resistance layer 10, ie the resistance layer 10 is arranged in the region of the extension 24 between the substrate 16 and the ground connection conductor layer 14.
  • a side facing away from the substrate 16 top 26 of the bulk slotted conductor 14 extends both in the region of the ground contact end of the layer structure in which the bulk slotted conductor 14 on the substrate 16, as well as in the region of the extension 24, in which the bulk slotted conductor 14 on the Resistor layer 10 rests in a plane.
  • This planar O- berseite 26 of the bulk slotted conductor 14 is used to make the electrical contact with the housing 22, wherein preferably a solder joint is produced.
  • a length 28 of the grounding conductor 14, i. an extension of the mass insertion conductor 14 in the propagation direction of the RF wave have a certain minimum length, since otherwise no sufficient Lotkehle can form.
  • a method of fabricating a planar laminar structure for an RF termination comprising forming on a substrate a resistive layer for converting RF energy to heat, an input line for supplying RF energy, and a bulk bus for electrically connecting to a ground contact Input conductor is electrically connected to a first end of the resistive layer and the Masseeingschussleiterbahn is electrically connected to a first end opposite the second end of the resistive layer, characterized in that first the resistive layer is formed on the substrate and thereafter the Masseeingschussleiterbahn at least partially formed on the resistive layer becomes.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Details Of Resistors (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

The input conductor track connects with a resistance layer (10) that is coupled to the earthing conductor (14). These are formed on a substrate (16). The earthing contact (22) is formed at the end and is part of a housing that provides efficient heat transfer.

Description

HF-Abschlusswiderstand mit einer planeren Schichtstruktur RF terminator with a planar layered structure
Die vorliegende Erfindung betrifft einen HF-Abschlusswiderstand mit einer plana- ren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist und die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und an einem massekontaktseitigen Ende der Schichtstruktur die Masseanschussleiterbahn die oberste Schicht der Schicht- struktur ausbildet, gemäß dem Oberbegriff des Anspruchs 1. Die Erfindung betrifft ferner ein Verfahren zum Herstellen einer planaren Schichtstruktur für einen HF- Abschlusswiderstand, wobei auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt ausgebildet wird, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden wird und die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden wird, gemäß dem Oberbegriff von Anspruch 6.The present invention relates to an RF termination resistor having a planar layered structure comprising on a substrate a resistance layer for converting RF energy to heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact the input conductor track is electrically connected to a first end of the resistive layer and the grounding interconnect track is electrically connected to a second end of the resistive layer opposite the first end and at a ground contact end of the layered structure the grounding interconnect line forms the topmost layer of the layered structure according to the preamble of the claim 1. The invention further relates to a method for producing a planar layer structure for an RF termination resistor, wherein on a substrate, a resistance layer for converting RF energy into heat, an input conductor to the Zuf the ground conductor is electrically connected to a first end of the resistive layer and the grounded interconnect is electrically connected to a second end of the resistive layer opposite the first end, according to the preamble of FIG Claim 6.
HF-Abschlusswiderstände finden beispielsweise für die Anpassung von HF-Baugruppen im Mobil- und Richtfunkbereich mit sehr hohen Sendeleistungen Anwendung, z.B. zum Abschluss eines Combiners oder Antennenausganges. Abschlusswiderstände erhöhter Verlustleistung besitzen große Widerstandsstruktu- ren, um die eingekoppelte HF-Leistung auf diese Fläche zu verteilen. Dies wirkt sich jedoch ungünstig auf den Reflexionsfaktor bei breitbandiger Anwendung aus, bzw. der Abschlusswiderstand ist bei gleichen Reflexionsfaktoren lediglich in einem schmaleren Frequenzband verwendbar.RF terminating resistors are used, for example, for adapting RF modules in the mobile and microwave radio range with very high transmission powers, for example for terminating a combiner or antenna output. Terminating resistors of increased power dissipation have large resistance structures in order to distribute the coupled RF power to this area. This works However, unfavorable to the reflection factor in broadband application, or the terminating resistor is used with the same reflection factors only in a narrower frequency band.
Bei den oben erwähnten HF-Abschlusswiderständen sind spezielle Konstruktionen der Substratstrukturen notwenig, um durch diese den sehr hohen technischen Ansprüchen gerecht zu werden.In the case of the abovementioned RF terminating resistors, special constructions of the substrate structures are necessary in order to meet the very high technical requirements.
Der Erfindung liegt die Aufgabe zugrunde, einen HF-Abschlusswiderstand der o.g. Art sowie ein Verfahren der o.g. Art derart auszugestalten, dass der Massean- schluss der Widerstandstruktur des Substrates an den Massekontakt, wie beispielsweise eine Gehäusewand, einerseits sehr kurz ist, um eine möglichst genaue Anpassung des Wellenwiderstandes zu erhalten, andererseits aber so konstruiert ist, dass sich noch eine gute Lötstelle für den Massekontakt zwischen Masseanschussleiterbahn und Massekontakt ausbilden kann.The invention has for its object to provide an RF termination of the o.g. Art and a method of o.g. Design such a way that the ground connection of the resistance structure of the substrate to the ground contact, such as a housing wall, on the one hand very short to obtain the most accurate adaptation of the characteristic impedance, but on the other hand is constructed so that there is still a good solder joint for can form the ground contact between the ground strip conductor and ground contact.
Diese Aufgabe wird erfindungsgemäß durch einen HF-Abschlusswiderstand der o.g. Art mit den in Anspruch 1 gekennzeichneten Merkmalen und durch ein Verfahren der o.g. Art mit den in Anspruch 6 gekennzeichneten Merkmalen gelöst. Vorteilhafte Ausgestaltungen der Erfindung sind in den weiteren Ansprüchen beschrieben.This object is achieved by an RF termination of o.g. Art having the features characterized in claim 1 and by a method of o.g. Art solved with the features characterized in claim 6. Advantageous embodiments of the invention are described in the further claims.
Bei einem HF-Abschlusswiderstand der o.g. Art ist es erfindungsgemäß vorgesehen, dass die Masseanschussleiterbahn wenigstens teilweise auf der Wider- Standsschicht angeordnet ist.For an RF termination of the o.g. Art it is provided according to the invention that the ground strip conductor track is at least partially disposed on the resist layer.
Bei einem Verfahren der o.g. Art ist es erfindungsgemäß vorgesehen, dass zuerst die Widerstandsschicht auf dem Substrat ausgebildet wird und danach die Masseanschussleiterbahn wenigstens teilweise auf der Widerstandsschicht ausgebil- det wird.In a method of o.g. It is inventively provided that first the resistive layer is formed on the substrate and then the bulk insertion conductor is at least partially formed on the resistive layer.
Dies hat den Vorteil, dass die Oberseite der Masseanschussleiterbahn vollständig frei liegt und damit für die Kontaktierung mit dem Massekontakt vollständig zur Verfügung steht. Hierdurch ist es möglich, die Masseanschussleiterbahn so kurz wie für eine ausreichende elektrische Verbindung mit dem Massekontakt nötig auszubilden, so dass die negativen elektrischen Auswirkungen des Masseanschlusses auf die Anpassung des Wellenwiderstandes des HF-Abschlusswiderstandes minimiert und gleichzeitig die zur elektrischen Kontaktierung zur Ver- fügung stehende Oberfläche maximiert werden kann.This has the advantage that the upper side of the ground starting conductor is completely exposed and thus completely available for contacting with the ground contact. This makes it possible, the ground strip conductor so short as necessary for sufficient electrical connection to the ground contact, so that the negative electrical effects of the ground terminal can be minimized to match the characteristic impedance of the RF termination resistor while maximizing the surface area available for electrical contacting.
In einer bevorzugten Ausführungsform ist am massekontaktseitigen Ende der Schichtstruktur die Masseanschussleiterbahn auf dem Substrat angeordnet und weist eine sich in Richtung des ersten Endes der Widerstandsschicht erstreckende Erweiterung auf, die auf der Widerstandsschicht angeordnet ist.In a preferred embodiment, at the ground contact-side end of the layer structure, the grounding conductor track is arranged on the substrate and has an extension extending in the direction of the first end of the resistance layer, which is arranged on the resistance layer.
Eine gute und funktionssicher herstellbare elektrische Kontaktierung zwischen der Masseanschussleiterbahn und dem Massekontakt erzielt man dadurch, dass sich eine von dem Substrat abgewandte Oberseite der Masseanschussleiterbahn so- wohl im Bereich des massekontaktseitigen Endes der Schichtstruktur, in dem die Masseanschussleiterbahn auf dem Substrat aufliegt, als auch im Bereich der Erweiterung, in dem die Masseanschussleiterbahn auf der Widerstandsschicht aufliegt, in einer Fläche erstreckt.A good and reliably producible electrical contact between the ground strip conductor and the ground contact is achieved in that an upper side facing away from the substrate of the bulk slab conductor in the region of the ground contact end of the layer structure, in which the ground strip conductor rests on the substrate, as well as in Extending portion of the extension in which the mass insertion conductor rests on the resistance layer in a surface.
Zum Abführen der in der Widerstandsschicht erzeugten Wärme ist die planare Schichtstruktur in einem Gehäuse aus elektrisch leitendem Werkstoff angeordnet, wobei der Massekontakt das Gehäuse ist.For discharging the heat generated in the resistance layer, the planar layer structure is arranged in a housing of electrically conductive material, wherein the ground contact is the housing.
Zweckmäßigerweise ist der Massekontakt an einer massekontaktseitigen Stimflä- che der planaren Schichtstruktur angeordnet.Expediently, the ground contact is arranged on a ground contact-side stimulus surface of the planar layer structure.
Die Erfindung wird im Folgenden anhand der Zeichnung näher erläutert. Diese zeigt in:The invention will be explained in more detail below with reference to the drawing. This shows in:
Fig. 1 eine bevorzugte Ausführungsform eines erfindungsgemäßen HF-Abschlusswiderstands in Aufsicht,1 shows a preferred embodiment of an RF termination resistor according to the invention in supervision,
Fig. 2 den HF-Abschlusswiderstand von Fig. 1 in schematischer Schnittansicht, Fig. 3 eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für eine Länge der Masseanschussleiterbahn von L = 0,6 mm und2 shows the RF termination of FIG. 1 in a schematic sectional view, Fig. 3 is a graph showing the adjustment of the characteristic impedance over the frequency for a length of the bulk starting conductor of L = 0.6 mm and
Fig. 4 eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für eine Länge der Masseanschussleiterbahn von L = 1 ,1 mmFig. 4 is a graph showing the adjustment of the characteristic impedance over the frequency for a length of the bulk starting conductor of L = 1, 1 mm
Die aus Fig.1 ersichtliche, bevorzugte Ausführungsform eines erfindungsgemäßen HF-Abschlusswiderstands umfasst eine Widerstandsschicht 10, eine Eingangsleiterbahn 12 und eine Masseanschussleiterbahn 14. Die Widerstandsschicht 10, die Eingangsleiterbahn 12 und die Masseanschussleiterbahn 14 sind als jeweilige Schichten auf einem Substrat 16 ausgebildet und bilden eine planare Schichtstruktur. Die Eingangsleiterbahn 12 ist mit einem ersten Ende 18 der Widerstands- schicht 10 elektrisch verbunden und die Masseanschussleiterbahn 14 mit einem dem ersten Ende 18 gegenüberliegenden zweiten Ende 20 der Widerstandsschicht 10 elektrisch verbunden. Die Widerstandsschicht 10 dient zum Umwandeln von HF-Energie in Wärme, die Eingangsleiterbahn 12 dient zum Zuführen von HF-Energie und die Masseanschussleiterbahn 14 dient zum elektrischen Verbin- den mit einem Massekontakt 22 (Fig. 2).The preferred embodiment of an RF termination resistor according to the invention, as shown in FIG. 1, comprises a resistance layer 10, an input conductor 12 and a grounding conductor 14. The resistance layer 10, the input conductor 12 and the grounding conductor 14 are formed as respective layers on a substrate 16 and form a planar layer structure. The input conductor 12 is electrically connected to a first end 18 of the resistive layer 10, and the grounding conductor 14 is electrically connected to a second end 20 of the resistive layer 10 opposite the first end 18. The resistive layer 10 serves to convert RF energy to heat, the input trace 12 serves to deliver RF energy, and the bulk launch trace 14 is for electrical connection to a ground contact 22 (FIG. 2).
Die von der Eingangsleiterbahn 12 (in Fig. 2 nicht dargestellt), der Widerstandsschicht 10 und der Masseanschussleiterbahn 14 gebildete planare Schichtstruktur ist aus Fig. 2 näher ersichtlich. Der Massekontakt 22 ist stirnseitig an einem mas- sekontaktseitigen Ende der Schichtstruktur angeordnet und ist beispielsweise ein Teil eines Gehäuses. Dieses Gehäuse ist aus einem elektrischen leitenden Werkstoff hergestellt und hat dadurch auch gute Wärmeleitungseigenschaften, so dass die in der Widerstandsschicht 10 entstehende Wärmeenergie über das Gehäuse an einen Kühlkörper abgeleitet wird.The planar layer structure formed by the input conductor 12 (not shown in FIG. 2), the resistance layer 10 and the grounding conductor 14 is shown in more detail in FIG. The ground contact 22 is arranged on the front side on a mas se seseitige end of the layer structure and is for example a part of a housing. This housing is made of an electrically conductive material and thereby also has good thermal conduction properties, so that the heat energy generated in the resistance layer 10 is dissipated via the housing to a heat sink.
Die Masseanschussleiterbahn 14 stellt den elektrischen Kontakt zwischen der Widerstandsschicht 10 und dem Gehäuse 22 her. Erfindungsgemäß ist die Masseanschussleiterbahn 14 wenigstens teilweise auf der Widerstandsschicht 10 angeordnet. Am massekontaktseitigen Ende der Schichtstruktur ist die Massean- schussleiterbahn 14 auf dem Substrat 16 angeordnet. In Richtung des ersten Endes 18 der Widerstandsschicht 10 erstreckt sich eine Erweiterung 24 der Masseanschussleiterbahn 14, die auf der Widerstandsschicht 10 angeordnet ist, d.h. die Widerstandsschicht 10 ist im Bereich der Erweiterung 24 zwischen dem Sub- strat 16 und der Masseanschlussleiterschicht 14 angeordnet.The grounding conductor 14 provides electrical contact between the resistive layer 10 and the housing 22. According to the invention, the grounding conductor track 14 is arranged at least partially on the resistance layer 10. At the ground contact end of the layer structure, the mass Schußleiterbahn 14 arranged on the substrate 16. Extending in the direction of the first end 18 of the resistance layer 10 is an extension 24 of the grounding conductor track 14 which is arranged on the resistance layer 10, ie the resistance layer 10 is arranged in the region of the extension 24 between the substrate 16 and the ground connection conductor layer 14.
Eine von dem Substrat 16 abgewandte Oberseite 26 der Masseanschussleiterbahn 14 erstreckt sich sowohl im Bereich des massekontaktseitigen Endes der Schichtstruktur, in dem die Masseanschussleiterbahn 14 auf dem Substrat 16 auf- liegt, als auch im Bereich der Erweiterung 24, in dem die Masseanschussleiterbahn 14 auf der Widerstandsschicht 10 aufliegt, in einer Fläche. Diese ebene O- berseite 26 der Masseanschussleiterbahn 14 dient zum Herstellen des elektrischen Kontaktes mit dem Gehäuse 22, wobei bevorzugt eine Lötverbindung hergestellt wird. Hierzu muss eine Länge 28 der Masseanschussleiterbahn 14, d.h. eine Ausdehnung der Masseanschussleiterbahn 14 in Ausbreitungsrichtung der HF-Welle, eine gewisse Mindestlänge haben, da sich sonst keine ausreichende Lotkehle ausbilden kann. Andererseits ergeben sich umso größere negative Auswirkungen auf die Impedanzanpassung, je größer der Wert für die Länge 28 ist. Dadurch, dass die Masseanschussleiterbahn 14 am massekontaktseitigen Ende der Schichtstruktur auch im Bereich der Überlappung mit der Widerstandsschicht 10 die oberste Schicht darstellt, kann diese Länge 28 so klein gewählt werden, wie dies für die Kontaktierung mit dem Gehäuse unbedingt notwendig ist. Der negative Einfluss der Masseanschussleiterbahn 14 auf die Impedanzanpassung des HF-Abschlusswiderstandes ist dadurch minimiert.A side facing away from the substrate 16 top 26 of the bulk slotted conductor 14 extends both in the region of the ground contact end of the layer structure in which the bulk slotted conductor 14 on the substrate 16, as well as in the region of the extension 24, in which the bulk slotted conductor 14 on the Resistor layer 10 rests in a plane. This planar O- berseite 26 of the bulk slotted conductor 14 is used to make the electrical contact with the housing 22, wherein preferably a solder joint is produced. For this purpose, a length 28 of the grounding conductor 14, i. an extension of the mass insertion conductor 14 in the propagation direction of the RF wave, have a certain minimum length, since otherwise no sufficient Lotkehle can form. On the other hand, the greater the value for the length 28, the greater the negative effects on the impedance matching. Due to the fact that the ground terminal conductor 14 at the ground contact-side end of the layer structure also represents the topmost layer in the region of the overlap with the resistance layer 10, this length 28 can be selected to be as small as is absolutely necessary for contacting the housing. The negative influence of the grounding conductor 14 on the impedance matching of the RF termination resistor is thereby minimized.
Es ist eine kurze geometrische Distanz zwischen dem zweiten Ende 20 der Widerstandschicht 10 und der Gehäusewand 22 notwendig. Gleichzeitig besteht die technologische Forderung nach einer ausreichenden Länge 28 der Lötverbindung sowie einem kostengünstigen Aufbau. Durch den erfindungsgemäßen Schichtauf- bau (Masseanschussleiterbahn 14 auf Widerstandsschicht 10) wird allen Forderungen Rechnung getragen. Es ergibt sich ein einfacher, kostengünstiger Aufbau (keine Stirnkontaktierung), eine ausreichende Lötfläche für eine gleichmäßige, saubere Lötverbindung (Masseverbindung zum Gehäuse 22, die eine Kehlbildung gewährleistet), und man hat trotz großer Widerstandsstrukturen einen Ansatzpunkt zur Optimierung des Reflexionsfaktors, da die Länge 28 der Masseanschlussleiterbahn 14 einen entscheidenden Einfluss auf die elektrischen Parameter besitzt. Die dargestellte kostengünstige Fertigungstechnologie für planare Strukturen, wirkt sich sehr vorteilhaft auf die HF-Eigenschaften aus.There is a short geometric distance between the second end 20 of the resistive layer 10 and the housing wall 22 is necessary. At the same time there is the technological demand for a sufficient length 28 of the solder joint and a cost-effective structure. Due to the layer construction according to the invention (ground-applied conductor 14 on resistance layer 10), all requirements are taken into account. This results in a simple, cost-effective design (no front contact), a sufficient soldering surface for a uniform, clean solder joint (ground connection to the housing 22, which ensures a throat formation), and you have a starting point despite large resistance structures for optimizing the reflection factor, since the length 28 of the grounding conductor 14 has a decisive influence on the electrical parameters. The illustrated cost-effective manufacturing technology for planar structures, has a very beneficial effect on the RF properties.
Ein Verfahren zum Herstellen einer planaren Schichtstruktur für einen HF-Abschlusswiderstand, wobei auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt ausgebildet wird, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden wird und die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden wird, ist dadurch gekennzeichnet, dass zuerst die Widerstandsschicht auf dem Substrat ausgebildet wird und danach die Masseanschussleiterbahn wenigstens teilweise auf der Widerstandsschicht ausgebildet wird.A method of fabricating a planar laminar structure for an RF termination, comprising forming on a substrate a resistive layer for converting RF energy to heat, an input line for supplying RF energy, and a bulk bus for electrically connecting to a ground contact Input conductor is electrically connected to a first end of the resistive layer and the Masseeingschussleiterbahn is electrically connected to a first end opposite the second end of the resistive layer, characterized in that first the resistive layer is formed on the substrate and thereafter the Masseeingschussleiterbahn at least partially formed on the resistive layer becomes.
Der Einfluss der Länge L 28 der Masseanschussleiterbahn 14 ist in den Fig. 3 und 4 veranschaulicht. In Fig. 3 ist die Impedanzanpassung über die Frequenz für L = 0,6 mm und in Fig. 4 ist die Impedanzanpassung über die Frequenz für L = 1 ,1 mm angeben. Wie unmittelbar ersichtlich, ergibt sich im Bereich von 0,50 GHz bis 2.00 GHz eine um ca. 4 dB besser Impedanzanpassung für Länge 28 L = 0,6 (Fig. 3). The influence of the length L 28 of the ground starting conductor 14 is illustrated in FIGS. 3 and 4. In Fig. 3, the impedance matching over the frequency for L = 0.6 mm and in Fig. 4, the impedance matching over the frequency for L = 1, 1 mm specify. As can be seen immediately, in the range from 0.50 GHz to 2.00 GHz, there is an approximately 4 dB better impedance matching for length 28 L = 0.6 (FIG. 3).

Claims

Patentansprüche: claims:
1. HF-Abschlusswiderstand mit einer planaren Schichtstruktur, die auf einem Substrat (16) eine Widerstandsschicht (10) zum Umwandeln von HF- Energie in Wärme, eine Eingangsleiterbahn (12) zum Zuführen von HF- Energie und eine Masseanschussleiterbahn (14) zum elektrischen Verbinden mit einem Massekontakt (22) aufweist, wobei die Eingangsleiterbahn (12) mit einem ersten Ende (18) der Widerstandsschicht (10) elektrisch verbunden ist und die Masseanschussleiterbahn (14) mit einem dem ersten Ende (18) gegenüberliegenden zweiten Ende (20) der Widerstandsschicht (10) elektrisch verbunden ist und an einem massekontaktseitigen Ende derAn RF termination having a planar layer structure comprising on a substrate (16) a resistive layer (10) for converting RF energy into heat, an input trace (12) for delivering RF energy, and a bulk punch trace (14) for electrical Connecting to a ground contact (22), the input conductor (12) being electrically connected to a first end (18) of the resistive layer (10) and the grounding conductor (14) having a second end (20) opposite the first end (18). the resistance layer (10) is electrically connected and at a ground contact end of the
Schichtstruktur die Masseanschussleiterbahn (14) die oberste Schicht der Schichtstruktur ausbildet, d a d u r c h g e k e n n z e i c h n e t , dass die Masseanschussleiterbahn (14) wenigstens teilweise auf der Wi- derstandsschicht (10) angeordnet ist.Layer structure, the bulk starting conductor (14), the top layer of the layer structure forms, d a d u r c h e c e n e s in that the mass starting conductor (14) at least partially on the resistance layer (10) is arranged.
2. HF-Abschlusswiderstand nach Anspruch 1 , dadurch gekennzeichnet, dass am massekontaktseitigen Ende der Schichtstruktur die Masseanschussleiterbahn (14) auf dem Substrat (16) angeordnet ist und eine sich in Richtung des ersten Endes (18) der Widerstandsschicht erstreckende Erweiterung (24) aufweist, die auf der Widerstandsschicht (10) angeordnet ist.2. RF termination resistor according to claim 1, characterized in that at the ground contact-side end of the layer structure, the ground strip conductor track (14) on the substrate (16) is arranged and extending in the direction of the first end (18) of the resistive layer extending extension (24) which is disposed on the resistance layer (10).
3. HF-Abschlusswiderstand nach Anspruch 2, dadurch gekennzeichnet, dass sich eine von dem Substrat (16) abgewandte Oberseite (26) der Mas- seanschussleiterbahn (14) sowohl im Bereich des massekontaktseitigen3. RF termination resistor according to claim 2, characterized in that one of the substrate (16) facing away from the upper side (26) of the mas- seanschussleiterbahn (14) both in the region of the ground contact side
Endes der Schichtstruktur, in dem die Masseanschussleiterbahn (14) auf dem Substrat (16) aufliegt, als auch im Bereich der Erweiterung (24), in dem die Masseanschussleiterbahn (14) auf der Widerstandsschicht (10) aufliegt, in einer Fläche erstreckt. End of the layer structure, in which the ground strip conductor (14) rests on the substrate (16), as well as in the region of the extension (24), in which the ground strip conductor track (14) rests on the resistive layer (10) extends in one surface.
4. HF-Abschlusswiderstand nach wenigstens einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die planare Schichtstruktur in einem Gehäuse aus elektrisch leitendem Werkstoff angeordnet ist, wobei der Massekontakt (22) das Gehäuse ist.4. RF termination according to at least one of the preceding claims, characterized in that the planar layer structure is arranged in a housing made of electrically conductive material, wherein the ground contact (22) is the housing.
5. HF-Abschlusswiderstand nach wenigstens einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Massekontakt (22) an einer massekontaktseitigen Stirnfläche der planaren Schichtstruktur angeordnet ist.5. RF termination according to at least one of the preceding claims, characterized in that the ground contact (22) is arranged on a ground contact side end face of the planar layer structure.
6. Verfahren zum Herstellen einer planaren Schichtstruktur für einen HF- Abschlusswiderstand, wobei auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektri- sehen Verbinden mit einem Massekontakt ausgebildet wird, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden wird und die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden wird, d a d u r c h g e k e n n z e i c h n e t , dass zuerst die Widerstandsschicht auf dem Substrat ausgebildet wird und danach die Masseanschussleiterbahn wenigstens teilweise auf der Widerstandsschicht ausgebildet wird. 6. A method for producing a planar layer structure for an RF termination resistor, wherein on a substrate, a resistance layer for converting RF energy into heat, an input conductor for supplying RF energy and a ground strip conductor for electrical connection see is formed with a ground contact wherein the input track is electrically connected to a first end of the resistive layer and the grounded interconnect is electrically connected to a second end of the resistive layer opposite the first end, characterized in that first the resistive layer is formed on the substrate and thereafter the bulk launching trace is at least partially formed on the resistive layer is trained.
EP06776894A 2005-08-26 2006-08-16 Hf terminating resistor having a planar layer structure Active EP1917667B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE202005013515U DE202005013515U1 (en) 2005-08-26 2005-08-26 High frequency termination resistor for an antenna has a planar structure providing good heat transfer
PCT/EP2006/008089 WO2007022906A2 (en) 2005-08-26 2006-08-16 Hf terminating resistor having a planar layer structure

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EP1917667A2 true EP1917667A2 (en) 2008-05-07
EP1917667B1 EP1917667B1 (en) 2010-01-06

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EP (1) EP1917667B1 (en)
JP (1) JP2009506525A (en)
CN (1) CN101253583B (en)
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DE202006018768U1 (en) * 2006-12-12 2007-02-15 Rosenberger Hochfrequenztechnik Gmbh & Co.Kg Energy absorbing flange high frequency moving load waveguide has edge bent at right angles towards a substrate
CN103633427B (en) * 2012-12-28 2015-02-04 中国科学院电子学研究所 Broadband antenna based on planar resistor technology
DE102018121918A1 (en) * 2018-09-07 2020-03-12 DESY Deutsches Elektronen-Synchrotron Power amplifier for the high frequency range

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FR2096858B1 (en) 1970-07-07 1973-11-16 Thomson Csf
US4310812A (en) * 1980-08-18 1982-01-12 The United States Of America As Represented By The Secretary Of The Army High power attenuator and termination having a plurality of cascaded tee sections
EP0424536B1 (en) 1989-02-02 1994-09-14 Fujitsu Limited Film resistor terminator for microstrip line
US4965538A (en) * 1989-02-22 1990-10-23 Solitron Devices, Inc. Microwave attenuator
JP3060916B2 (en) * 1995-10-24 2000-07-10 株式会社村田製作所 High-voltage variable resistor
US6300859B1 (en) * 1999-08-24 2001-10-09 Tyco Electronics Corporation Circuit protection devices
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ATE454703T1 (en) 2010-01-15
DE202005013515U1 (en) 2005-11-03
HK1121578A1 (en) 2009-04-24
DE502006005869D1 (en) 2010-02-25
US7834714B2 (en) 2010-11-16
NO338161B1 (en) 2016-08-01
EP1917667B1 (en) 2010-01-06
US20090134959A1 (en) 2009-05-28
WO2007022906A2 (en) 2007-03-01
JP2009506525A (en) 2009-02-12
WO2007022906A3 (en) 2007-04-19
CA2617505A1 (en) 2007-03-01
CA2617505C (en) 2014-10-07
NO20081366L (en) 2008-03-14
CN101253583A (en) 2008-08-27

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