EP1859081A2 - Formation de films ultraminces greffes sur des surfaces conductrices ou semi-conductrices de l'electricite - Google Patents
Formation de films ultraminces greffes sur des surfaces conductrices ou semi-conductrices de l'electriciteInfo
- Publication number
- EP1859081A2 EP1859081A2 EP06726076A EP06726076A EP1859081A2 EP 1859081 A2 EP1859081 A2 EP 1859081A2 EP 06726076 A EP06726076 A EP 06726076A EP 06726076 A EP06726076 A EP 06726076A EP 1859081 A2 EP1859081 A2 EP 1859081A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- formula
- organic film
- electrolytic solution
- conductive
- electricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 30
- 239000010409 thin film Substances 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000002243 precursor Substances 0.000 claims abstract description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000008151 electrolyte solution Substances 0.000 claims description 25
- 229910052759 nickel Inorganic materials 0.000 claims description 25
- NKKMVIVFRUYPLQ-NSCUHMNNSA-N crotononitrile Chemical compound C\C=C\C#N NKKMVIVFRUYPLQ-NSCUHMNNSA-N 0.000 claims description 22
- -1 alkyl radical Chemical class 0.000 claims description 21
- 150000001875 compounds Chemical group 0.000 claims description 20
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 14
- 239000000178 monomer Substances 0.000 claims description 14
- 230000010287 polarization Effects 0.000 claims description 12
- 230000009467 reduction Effects 0.000 claims description 11
- ZFDIRQKJPRINOQ-HWKANZROSA-N Ethyl crotonate Chemical compound CCOC(=O)\C=C\C ZFDIRQKJPRINOQ-HWKANZROSA-N 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 238000005868 electrolysis reaction Methods 0.000 claims description 8
- ZFDIRQKJPRINOQ-UHFFFAOYSA-N transbutenic acid ethyl ester Natural products CCOC(=O)C=CC ZFDIRQKJPRINOQ-UHFFFAOYSA-N 0.000 claims description 8
- 150000002825 nitriles Chemical class 0.000 claims description 7
- ISBHMJZRKAFTGE-UHFFFAOYSA-N pent-2-enenitrile Chemical compound CCC=CC#N ISBHMJZRKAFTGE-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 150000005840 aryl radicals Chemical class 0.000 claims description 5
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 5
- 238000004377 microelectronic Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 125000006575 electron-withdrawing group Chemical group 0.000 claims description 4
- 238000007306 functionalization reaction Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 150000008065 acid anhydrides Chemical class 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000970 chrono-amperometry Methods 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical compound [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000003115 supporting electrolyte Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 68
- 238000006243 chemical reaction Methods 0.000 description 34
- 239000000758 substrate Substances 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 238000006116 polymerization reaction Methods 0.000 description 13
- 238000001228 spectrum Methods 0.000 description 11
- 230000005518 electrochemistry Effects 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 238000002484 cyclic voltammetry Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 6
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 125000002560 nitrile group Chemical group 0.000 description 5
- 238000004611 spectroscopical analysis Methods 0.000 description 5
- WGHUNMFFLAMBJD-UHFFFAOYSA-M tetraethylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CC[N+](CC)(CC)CC WGHUNMFFLAMBJD-UHFFFAOYSA-M 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 4
- 150000001450 anions Chemical group 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
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- 125000001424 substituent group Chemical group 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- 238000004832 voltammetry Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 150000004665 fatty acids Chemical class 0.000 description 3
- 125000001072 heteroaryl group Chemical group 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- LRMSQVBRUNSOJL-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)F LRMSQVBRUNSOJL-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 101000878457 Macrocallista nimbosa FMRFamide Proteins 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- QVVNESPRWFWTTM-UHFFFAOYSA-M benzyl(trimethyl)azanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.C[N+](C)(C)CC1=CC=CC=C1 QVVNESPRWFWTTM-UHFFFAOYSA-M 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- 229920000578 graft copolymer Polymers 0.000 description 2
- 125000001188 haloalkyl group Chemical group 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000000879 imine group Chemical group 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 150000005838 radical anions Chemical class 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 2
- 239000013638 trimer Substances 0.000 description 2
- 238000001075 voltammogram Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ISBHMJZRKAFTGE-ARJAWSKDSA-N (z)-pent-2-enenitrile Chemical compound CC\C=C/C#N ISBHMJZRKAFTGE-ARJAWSKDSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical class C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- JGLMVXWAHNTPRF-CMDGGOBGSA-N CCN1N=C(C)C=C1C(=O)NC1=NC2=CC(=CC(OC)=C2N1C\C=C\CN1C(NC(=O)C2=CC(C)=NN2CC)=NC2=CC(=CC(OCCCN3CCOCC3)=C12)C(N)=O)C(N)=O Chemical compound CCN1N=C(C)C=C1C(=O)NC1=NC2=CC(=CC(OC)=C2N1C\C=C\CN1C(NC(=O)C2=CC(C)=NN2CC)=NC2=CC(=CC(OCCCN3CCOCC3)=C12)C(N)=O)C(N)=O JGLMVXWAHNTPRF-CMDGGOBGSA-N 0.000 description 1
- 229930194542 Keto Natural products 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 238000004847 absorption spectroscopy Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000008360 acrylonitriles Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
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- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002129 infrared reflectance spectroscopy Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 230000002186 photoactivation Effects 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 125000004434 sulfur atom Chemical group 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
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- 238000003419 tautomerization reaction Methods 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 125000005490 tosylate group Chemical group 0.000 description 1
- 150000008648 triflates Chemical class 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/02—Electrolytic coating other than with metals with organic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
Definitions
- the present invention relates to the field of organic surface coatings, said coatings being in the form of organic films. It is more particularly related to the use of a family of molecules appropriately selected to allow the simple and reproducible formation of ultra thin organic films (that is to say, whose thickness is generally less than ten nanometers or consisting of only a few monomeric layers) by electro-chemical grafting on conductive or semi-conductive surfaces of electricity.
- spin coating processes known as "spin coating” (or related dip coating or spray coating techniques) are not known. require no particular affinity between the deposited molecules and the substrate of interest.In fact, the cohesion of the deposited film is essentially based on the interactions between the constituents of the film, which may for example be crosslinked after deposition to improve stability. techniques are very versatile, applicable to all types of surfaces to cover, and very reproducible.However, they do not allow any effective grafting between the film and the substrate (it is a simple physisorption), and the thicknesses produced are always than 10 nanometers, and spin coating techniques only allow uniform deposits when Ace cover is essentially flat (French patent application FR-A-2,843,757).
- the minimum thicknesses accessible to the "spray coating” techniques are related to the wetting of the surfaces by the sprayed liquid, since the deposit becomes essentially film-forming only when the drops coalesce.
- the thickness of the deposits obtained by immersion depends quite a complex way of a certain number of parameters such as the viscosity of the dipping liquid and the process (speed of withdrawal).
- Other techniques for forming an organic coating on the surface of a support such as plasma deposition described, for example, in the articles of Konuma M., "Technical Plasma Deposition Film", (1992) Springer Verlag, Berlin, and Biederman H.
- the self-assembly of monolayers is a very simple technique to implement (Ulman A., "An introduction to ultrathin organic films from Langmuir-Blodgett films to self-assembly", 1991, Boston, Academy Press).
- This technique requires the use of generally molecular precursors having sufficient affinity for the surface of interest to be coated.
- This will be referred to as a precursor-surface pair, such as sulfur compounds having an affinity for gold or silver, tri-halo silanes for oxides such as silica or alumina, polyaromatics for graphite or nanotubes. carbon.
- the formation of the film is based on a specific chemical reaction between a portion of the molecular precursor (the sulfur atom in the case of thiols, for example) and certain "receptor" sites on the surface.
- a chemisorption reaction ensures the attachment.
- films of molecular thickness (less than 10 ⁇ m) are obtained.
- couples involving oxide surfaces give rise to the formation of very strongly grafted films (the Si-O bond involved in the chemisorption of tri-halo silanes on silica is among the most stable in chemistry), it is This is not the case when one is interested in metals or semiconductors without oxide. In these cases, the interface bond between the conductive surface and the monomolecular film is fragile.
- the self-assembled monolayers of gold thiols desorb as soon as they are heated above 60 ° C., or in the presence of a good solvent at room temperature, or as soon as they are brought into contact with an oxidizing or reducing liquid medium.
- the Si-O-Si bonds are embrittled as soon as they are in aqueous or even wet medium, in particular under the effect of heat.
- Polymer electrografting is a technique based on the electro-induced initiation, polymerization, electro-induced propagation of electro-active monomers on the surface of interest that plays both the electrode and the electrode role.
- Polymerization initiator S.
- Electrografting requires the use of precursors adapted to its initiation mechanism by reduction and propagation, generally anionic since cathodically initiated electrografting is often preferred and applicable to noble and non-noble metals (unlike electrografting by anodic polarization which is only applicable on noble substrates).
- "Impregnated vinyl” molecules that is to say carriers of electron-withdrawing functional groups, such as acrylonitriles, acrylates, vinylpyridines ... are particularly suitable for this process which gives rise to numerous applications in the field of microelectronics or biomedical.
- the adhesion of electrografted films is ensured by a covalent carbon-metal bond.
- the polymerizable nature of the precursor leads to relatively thick electrografted films, that is to say whose thickness is rarely less than 50 nm.
- the polymerization is essential for the formation of the carbon / metal interface bond: it has in fact been shown (G. Deniau et al., "Coupled chemistry revisited in the attempt cathodic electropolymerization of 2-butenenitrile “Journal of Electroanalytical Chemistry, 1998, 451, 145-161) that the mechanism of electrografting proceeds by electroreduction of the monomer on the surface, to give an unstable radical anion, which, if it was not medium of polymerizable molecules, desorbed to return to solution (op.cit.).
- electrografting is the only technique that makes it possible to produce grafted films with specific control of the interface link. Moreover, unlike plasma or photoinduced techniques, electrografting generates its reactive species only in the immediate vicinity of the surface of interest (in the electrochemical double layer, whose thickness is in most cases a few nanometers) .
- reaction mechanism of the electrografting of acrylonitrile by cathodic polarization can be represented by the following scheme A:
- FIGURE A A first figure.
- the grafting reaction corresponds to step 1, where the growth takes place from the surface.
- Step 2 is the main parasitic reaction, which leads to obtaining a non-grafted polymer; this reaction is limited by the use of high concentrations of monomer.
- the growth of the grafted chains is therefore carried out by purely chemical polymerization, that is to say independently of the polarization of the conductive surface which gave rise to the grafting. This step is therefore sensitive to (and is particularly interrupted by) the presence of chemical inhibitors of this growth, in particular by protons.
- reaction (1) reflects the possible tautomerism of the radical -CH 3 of the grafted anion radical which can lead to the following flag:
- Reaction (2) of scheme B leads to the same product but directly via an intermolecular route due to the relative acidity of the crotononitrile protons.
- the electrografting of precursors such as aryldiazonium salts which carry a positive charge, is carried out thanks to a cleavage reaction in their reduced form. salts, to give a radical which is chemisorbed on the surface.
- the electrografting reaction of aryldiazonium salts is electro-initiated and leads to the formation of interface chemical bonds.
- electrografting of aryldiazonium salts does not "need" a coupled chemical reaction to stabilize the chemisorbed species formed as a result of charge transfer, since this species is electrically neutral, and not negatively charged as in the case of a vinyl monomer. It therefore leads - a priori - to a surface adduct / stable aryl group.
- aryldiazonium salts lead to ultra-thin organic films which conduct electricity, and which can therefore grow on them.
- aryldiazonium salts especially in very low thickness ranges, i.e., below 100 nra, and especially below 20 nm.
- the one-to-one relationship between chain thickness and chain length is abusive: the graft density of chains - giving the number of chain feet per unit area - must also be known for the relationship to be effectively one-to-one. It is indeed possible to achieve a given thickness either with very dense chains ("close packing") by controlling only the length of the brush chains, but also with given chain length (possibly important) by controlling the density of grafting (density weak, the chains are "flat" on the surface and give an apparent thickness lower than the length of chain). The control of the length of growing chains - without further considerations - is therefore generally insufficient to control the thickness of the film obtained.
- microelectronics Among the industries interested in ultra-thin films, we can notably mention those of microelectronics.
- the current processes for manufacturing microprocessors rely on the deposition of successive layers, very thin, optionally perforated by lithography so as to obtain selective deposits, both for the manufacture of transistors and for that of the copper interconnection networks between these transistors.
- the race to high processor speeds leads to miniaturize the architecture of all components, so that the successive layers that give birth to themselves are increasingly thin.
- the challenge today is clearly to achieve industrially, on tens of square kilometers per week, layers of less than 10 nanometers with a uniformity control better than 5%.
- Electrografting reactions currently available according to the prior art make it easy to obtain organic films with thicknesses between 10 and 500 nm, on various conductive and semiconductor substrates. Nevertheless, it remains to broaden the range of thicknesses, both towards thicker layers (> 10 micrometers) and finer (fractions of nanometer) in order to meet the demand of the industry, to diversify the properties of use of such materials and therefore their potential applications.
- a film is said to be "organic” if the grafting process by which it is likely to be obtained involves an electrochemical reaction carried out on a compound having an electrograftable carbon represented by the arrow C on the compound below and an electroreductible function schematized by the arrow F on the compound below:
- the present invention relates to the use of organic precursors of the following formula (I);
- R 2 is an electron-withdrawing group
- R 3 , R 4 and R 5 identical or different, represent a hydrogen atom, an alkyl radical or an aryl radical, for the formation, by electrochemical grafting, of a homogeneous organic film on a conductive surface or semi-conductor of electricity.
- the organic film thus formed has a thickness less than or equal to 10 nm.
- the term "electron-withdrawing group” is intended to mean any group capable of stabilizing an anion at position a of this group, the stabilization being able to be effected by delocalization of the electrons (mesomeric effect -M) or by simple electroattractive effect ( -1) or by cleavage of a bond (electrocleavable group).
- groups or functions capable of stabilizing the anion by mesomeric effect such as carbonyls, sulphonyls, amides, nitriles, nitro, esters, carboxylic acids, acid halide, acid anhydride, aryls and heteroaryls; groups or functions capable of stabilizing the anion by virtue of their electronegativity (electroattractive groups) such as halogen atoms, silanes and haloalkyls; electrocleavable groups that stabilize the bond-cladding Pennion such as epoxides, triflates and quaternary ammoniums, and finally the mixed groups or functions that stabilize the anion by several effects, for example the nitriles which are electronegative and allow an effect mesomeric.
- an "alkyl radical” refers to an alkyl group, optionally mono- or polysubstituted, linear, branched or cyclic, saturated or unsaturated, having from 1 to 20 carbon atoms, said radical possibly containing one or more heteroatoms such as N 7 O or S.
- alkyl radicals there may be mentioned in a nonlimiting manner, the methyl, propyl, isopropyl, butyl, sec-butyl, rerr-butyl and pentyl radicals.
- an aryl radical refers to an aromatic or heteroaromatic carbon structure, substituted or unsubstituted, consisting of one or more aromatic or heteroaromatic rings each comprising from 3 to 8 atoms.
- substituents of the alkyl and aryl radicals mention may be made, in a nonlimiting manner, of halogen atoms, alkyl, haloalkyl, substituted or unsubstituted aryl groups, substituted or unsubstituted heteroaryls, amino, cyano, azido, hydroxy, mercapto , keto, carboxy and methoxy.
- the choice of substituents is based on the following principle: the control of the thickness of an electrografted film assumes that the species grafted immediately after the transfer of charge from the electrode is stable vis-à-vis the medium from which it is derived .
- the grafting and polymer growth reactions by electro-priming are very related: it is the growth of the polymer which stabilizes the grafting (the metal-polymer bond) by moving the carbanion away from the charged metal surface negatively (see diagram A above).
- the inventors have selected the compounds of formula (I) above which have an electroreductable function (graftable) and a sufficiently acidic function to inhibit the anionic polymerization growth reaction.
- the invention generally corresponds to molecular precursors of films whose monoelectronic reduction leads to a species that is stable or stabilized by a reaction that is faster than the propagation of a polymer chain and that the desorption of this grafted species.
- the use of the compounds of formula (I) according to the invention also makes it possible to obtain an organic electrografted film whose thickness and graft density can be controlled.
- R 2 is a nitrile or carbonyl group.
- R 2 represents a carbonyl group, it is then preferably selected from esters, carboxylic acids, acid halides and acid anhydrides.
- precursors of formula (I) there may be mentioned in particular crotononitrile, pentenenitrile, ethyl crotonate and their derivatives.
- the derivatives of the compounds mentioned above correspond to the molecules that retain the parts necessary for grafting.
- ethyl crotonate derivatives it is possible to envisage other compounds such as esters, the corresponding acid or an amino acid linked by its amine function, easily accessible by simple chemical reactions known to those skilled in the art. .
- the invention also relates to a process for forming a homogeneous organic film on a conductive or semiconductive surface of electricity, said process being characterized by the fact that an electrolytic solution consisting of at least one solvent and containing at least one compound of formula (I) below:
- said organic film has a thickness of less than or equal to 10 nm.
- the precursors of formula (I) are chosen from compounds for which the pKa of the hydrogen of the carbon carrying R 1 and R 5 is less than the pK of the solvent of the electrolytic solution, K being the constant of autoprotolysis of the solvent.
- the surface used is a surface of nickel.
- the working potential employed is at most 5% greater than the value of at least one of the reduction potentials of said precursors of formula (I) present within the electrolytic solution. Indeed to promote the surface reaction, it is advantageous to be at a value close to the reduction threshold of the compound which will react at the surface.
- the working current density is low, preferably less than or equal to 10 "4 cm A.” about 2, such that most of the current is converted to a surface reaction and does not promote a parasitic reaction in solution.
- An optimal value can be estimated from the average number of grafting sites on the surface considered.
- the electrolysis of the electrolytic solution containing the compounds of formula (1) may be independently carried out by polarization under linear or cyclic voltammetric conditions, under potentiostatic, potentiodynamic, intensiostatic, galvanostatic, galvanodynamic or by simple or pulsed chronoamperometry conditions.
- it is carried out by polarization under cyclic voltammetric conditions.
- the number of cycles will preferably be between 1 and 1000 and even more preferably between 1 and 50.
- the concentration of the precursor (s) of formula (I) is preferably between 0.001 and 10 mol. "1 approximately.
- this concentration is 5 mol.l" 1 ⁇ 1 mol. About 1 " .
- the thickness of the film formed on the conductive or semi-conductive surface of the electricity is controlled by the simple variation of the experimental parameters, accessible, empirically to those skilled in the art according to the precursor (s) of formula (I) 'he employs.
- the thickness of the film can be controlled by the number of scans in the case of cyclic voltammetry.
- the number of scans will be between 2 and 20 to obtain a film thickness of between 1 and 3 monomers, or between 0.2 and 0.5 nm.
- the process according to the present invention comprises a further step of functionalizing the electrografted organic film.
- This functionalization step can be performed after or during the grafting if chemistry allows.
- the term "functionalization” denotes the chemical modification of the functions of which the compounds of formula (I) are endowed. It can thus be the modification of simple substituents, for example ester functions, or even the complexation of metals ...
- the derivatives of the compounds of formula (I) are interesting in this respect, insofar as they retain their ability to be grafted according to the invention and carry specific substituents for their future use.
- the solvents of the electrolytic solution are preferably chosen from dimethylformamide, ethyl acetate, acetonitrile, dimethylsulfoxide and tetrahydrofuran.
- the electrolytic solution may also contain at least one support electrolyte that may be chosen in particular from quaternary ammonium salts such as perchlorates, tosylates, tetrafluoroborates, hexafluorophosphates, quaternary ammonium halides, sodium nitrate and sodium chloride.
- quaternary ammonium salts such as perchlorates, tosylates, tetrafluoroborates, hexafluorophosphates, quaternary ammonium halides, sodium nitrate and sodium chloride.
- TEAP tetraethylammonium perchlorate
- TBAP tetrabutylammonium perchlorate
- TPAP tetrapropylammonium perchlorate
- BTMAP benzyltrimethylammonium perchlorate
- the subject of the invention is also the conductive or semiconducting surfaces of electricity obtained by implementing the method described above, characterized in that said surfaces comprise at least one face at least partially covered by an organic film. homogeneous electrografted of at least one precursor of formula (I) as defined above.
- the thickness of the films obtained according to the invention is advantageously between 1 and 15 monomers derived from at least one compound of formula (I) and preferably to two.
- the films obtained according to the invention advantageously have a thickness less than or equal to 10 nm and even more preferably between 0.2 and 2.5 nm.
- the surfaces thus obtained according to the invention can advantageously be used in the electronics and microelectronics industries (for the preparation of microelectronic components) for the preparation of biomedical devices such as, for example, devices implantable in the body (stents for example), screening kits, etc.
- FIG. 1 represents the X-ray photoelectron (XPS) spectroscopy spectrum of the Crus region of a reference nickel surface before any electrografting operation; said spectrum corresponds to the number of strokes per second (CP S.) expressed in arbitrary units (ua) as a function of the binding energy ("binding energy") in electron Volts (eV);
- FIG. 2 (same units as FIG.
- FIG. 1 shows the XPS spectrum of the region of C 5 levels recorded on a nickel substrate after formation of an organic film from an electrolyte solution containing crotononitrile
- FIG. 3 shows an infra red spectrum in absorption reflection (IRRAS), angle of incidence 85 °, 256 scans, resolution 2 cm -1 , recorded on a nickel substrate after formation of an organic film from an electrolyte solution containing crotononitrile
- - Figure 4 represents the variation of the percentage of the total area
- FIG. 6 (same units as FIG. 1) represents the XPS spectrum of the C 1 s level region recorded on a nickel substrate after formation of an organic film from an electrolyte solution containing ethyl crotonate (5M);
- FIG. 7 (transmittance (%) as a function of the number of waves in cm -1 ) represents an IRRAS spectrum, angle of incidence 85 °, 256 scans, resolution 2 cm -1 , recorded on a nickel substrate after formation an organic film from an electrolyte solution containing ethyl crotonate (5M);
- FIG. 8 (same units as FIG. 1) represents the XPS spectrum of the region of C 5 levels recorded on a nickel substrate after formation of an organic film from an electrolytic solution containing cis pentenenitrile (5M) ;
- FIG. 9 (transmittance (%) as a function of the wavenumber in cm " ') represents an IRRAS spectrum, angle of incidence 85 °, 256 scans, resolution 2 cm -1 , recorded on a nickel substrate after formation an organic film from an electrolytic solution containing cis pentenenitrile (5M);
- FIG. 10 (current in mA as a function of the potential V) represents a voltammogram (cyclic voltammetry, 10 cycles) recorded for the various molecules studied (crotononitrile, ethyl crotonate or cis pentenenitrile), in the presence of TEAP at a concentration of 5.10 "2 mol.1 " 1 , with a scanning speed of 50 mV / s;
- FIG. 11 (same units as FIG. 1) represents a spectrum
- UPS Ultraviolet Photoelectron Spectroscopy
- FIG. 12 (same units as FIG. 1) represents a UPS spectrum (HeI) recorded on a nickel substrate after formation of an organic film from an electrolyte solution containing crotononitrile (5M).
- the total area of the C Is massif is 610 (in arbitrary units). This envelope can decompose into two peaks. One is centered on 285.0 eV and represents carbon atoms in a neutral environment (type - (CH 2 ) n -), the second one is displaced towards high binding energies (around 288.4 eV) which translated an electronegative environment for the probed atoms well in agreement with -COOR or -COOH groups significant of the presence of fatty acid.
- an electrolytic solution consisting of acetonitrile and containing crotononitrile (5 mol.l- 1 ) and TEAP as the supporting electrolyte at a concentration of 5.10 -2 mol- 1 was electrolyzed in a cell.
- conventional electrolysis with three electrodes The working electrode is a nickel layer supported by a glass slide, the counter electrode is a platinum plate and the reference electrode is based on the Ag + / Ag pair.
- the first peak is centered on 283.5 eV. Its width at half height is 0.8 eV and it represents, in area, 6.2% of the total envelope C Is.
- This peak is attributed to the carbon atoms chemically bonded to the metal atoms. The presence of this peak proves the electrochemical grafting of the crotononitrile molecule on the nickel surface.
- the width at half height, very low, indicates an unequivocal structure, translating grafting perpendicular to the surface rather than flat.
- the peak nitrogen N Is (in the case of crotononitrile) has a low energy structure at 397.5 eV, which reflects a strong interaction between metal and nitrogen.
- the area of the C Is massif is 1794, compared to 610 on a surface before electrochemistry.
- the area attributable to crotononitrile is therefore approximately 1184.
- Calculation of the percentage of grafted carbon relative to the corrected area of the contamination then gives 9.3%.
- 11 carbon atoms added by electrochemistry 1 carbon is chemically bonded to the metal. This result is in good agreement with the results (theoretical and experimental) cited in the article by BUREAU C.
- the synthesis of electrografted organic films is controlled by means of adjustable parameters in electrochemistry.
- the main parameters are the initial concentration of electroactive species (compounds of formula (I)), the value of the maximum potential imposed and the polarization time.
- This last parameter can vary either directly, it is the time of an electrolysis, or by means of a speed of scanning in voltammetry. Only the study of the parameters of maximum potential and polarization time has been presented in this example.
- This example corresponds to the study of ethyl trans-crotonate (compound represented below), molecule carrying an anionic polymerization engine (here an ester group) and a polymerization inhibitor (the CH 3 group). .
- the first peak is centered on 283.5 eV
- the half-height width is 0.85 eV and represents in area 3.85% of the total envelope C Is.
- peak is attributed to carbon atoms chemically bonded to metal atoms. The presence of this peak proves the electrochemical grafting of the ethyl crotonate molecule on the nickel surface.
- the area of the C Is massif is 2622, compared to 610 on a surface before electrochemistry, the area attributable to ethyl crotonate is therefore about 2012.
- the calculation of the percentage of grafted carbon relative to the corrected area of the contamination gives 5%. Of the 20 carbon atoms added by electrochemistry 1 is chemically bonded to the metal. This result can therefore correspond to grafted trimers.
- the signal is very weak (less than 1% transmittance), the IRRAS technique is here at the limit of detection.
- the spectrum is difficult to interpret.
- the ester moiety can be detected by its characteristic bands centered on 1710, 1265 and 1200 cm- 1 .
- the weak signal may indicate the presence of a strong orientation of the grafted chains with the parallel absorbent groups at the metal surface. also to emphasize that the ester group is present which gives great potential to this layer for subsequent functionalizations.
- This example corresponds to the study of ds-pentenenitrile (compound represented below), a molecule carrying an anionic polymerization engine (here a nitrile group) and a polymerization inhibitor (the CH 2 group carried by carbon ethylenic).
- the area of the C Is massif is 2830, compared to 610 on a virgin surface before electrochemistry, so there is about 2220 area attributable to pentenenitrile.
- the nitrile band at 2240 cm- 1 there exists in this region only a band centered on 2170 cm- 1, which can be attributed to a nitrile group in interaction with a metal.
- XPS analysis where a sub stoichiometry in carbon was noted.
- the nitrile groups are thus either in strong interaction with the metal (as seen in XPS and in IRRAS), or parallel to the metal surface and do not absorb in IRRAS.
- the weak signal may indicate the presence of a strong orientation of the grafted chains with the parallel absorbent groups to the metal surface.
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Abstract
Description
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0502516A FR2883299B1 (fr) | 2005-03-15 | 2005-03-15 | Formation de films ultraminces greffes sur des surfaces conductrices ou semi-conductrices de l'electricite |
| PCT/FR2006/000547 WO2006097611A2 (fr) | 2005-03-15 | 2006-03-13 | Formation de films ultraminces greffes sur des surfaces conductrices ou semi-conductrices de l'electricite |
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| Publication Number | Publication Date |
|---|---|
| EP1859081A2 true EP1859081A2 (fr) | 2007-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP06726076A Withdrawn EP1859081A2 (fr) | 2005-03-15 | 2006-03-13 | Formation de films ultraminces greffes sur des surfaces conductrices ou semi-conductrices de l'electricite |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8288009B2 (fr) |
| EP (1) | EP1859081A2 (fr) |
| JP (1) | JP2008533302A (fr) |
| FR (1) | FR2883299B1 (fr) |
| TW (1) | TW200634179A (fr) |
| WO (1) | WO2006097611A2 (fr) |
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| FR2910010B1 (fr) | 2006-12-19 | 2009-03-06 | Commissariat Energie Atomique | Procede de preparation d'un film organique a la surface d'un support solide dans des conditions non-electrochimiques, support solide ainsi obtenu et kit de preparation |
| US9725602B2 (en) | 2006-12-19 | 2017-08-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for preparing an organic film at the surface of a solid support under non-electrochemical conditions, solid support thus obtained and preparation kit |
| FR2910006B1 (fr) | 2006-12-19 | 2009-03-06 | Commissariat Energie Atomique | Procede de preparation d'un film organique a la surface d'un support solide dans des conditions non-electrochimiques, support solide ainsi obtenu et kit de preparation |
| FR2921516B1 (fr) | 2007-09-20 | 2010-03-12 | Commissariat Energie Atomique | Procede d'electrogreffage localise sur des substrats semi-conducteurs photosensibles |
| FR2929137B1 (fr) * | 2008-03-28 | 2011-03-11 | Commissariat Energie Atomique | Procede d'electrogreffage localise sur des substrats conducteurs ou semi-conducteurs en presence d'une microelectrode |
| FR2929618B1 (fr) | 2008-04-03 | 2011-03-18 | Commissariat Energie Atomique | Procede pour assembler deux surfaces ou une surface avec une molecule d'interet |
| FR2936604B1 (fr) | 2008-09-29 | 2010-11-05 | Commissariat Energie Atomique | Capteurs chimiques a base de nanotubes de carbone, procede de preparation et utilisations |
| FR2944982B1 (fr) | 2009-04-30 | 2011-10-14 | Commissariat Energie Atomique | Procede de preparation d'un substrat metallise,ledit substrat et ses utilisations |
| FR2973036B1 (fr) | 2011-03-22 | 2013-04-26 | Commissariat Energie Atomique | Procede de preparation d'un film organique a la surface d'un support solide par transfert ou par projection |
| FR2975700B1 (fr) | 2011-05-25 | 2013-07-05 | Commissariat Energie Atomique | Procede pour modifier un polymere de polydopamine ou un derive de celui-ci et polymere ainsi modifie |
| JP6475627B2 (ja) * | 2012-10-19 | 2019-02-27 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 電極材料上へのコーティングの電解重合 |
| FR3089227B1 (fr) | 2018-12-04 | 2020-11-13 | Commissariat Energie Atomique | Procédé de préparation d’une surface à activité bactériostatique et surface ainsi préparée |
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| BE1008086A3 (fr) * | 1994-01-20 | 1996-01-16 | Cockerill Rech & Dev | Procede de depot par electropolymerisation d'un film organique sur une surface conductrice de l'electricite. |
| BE1011511A6 (fr) * | 1997-10-22 | 1999-10-05 | Cipari S A | Procede pour l'enrobage de particules conductrices de l'electricite par greffage d'une couche polymere et produits issus de ce procede. |
| FR2837842B1 (fr) * | 2002-03-26 | 2004-06-18 | Commissariat Energie Atomique | Procede de fixation de macro-objets sur une surface conductrice ou semi-conductrice de l'electricite par electro-greffage, surfaces obtenues et applications |
| FR2851181B1 (fr) * | 2003-02-17 | 2006-05-26 | Commissariat Energie Atomique | Procede de revetement d'une surface |
| US8152986B2 (en) * | 2006-02-28 | 2012-04-10 | Commissariat A L'energie Atomique | Process for forming organic films on electrically conductive or semi-conductive surfaces using aqueous solutions |
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- 2005-03-15 FR FR0502516A patent/FR2883299B1/fr not_active Expired - Fee Related
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2006
- 2006-03-13 JP JP2008501360A patent/JP2008533302A/ja not_active Ceased
- 2006-03-13 EP EP06726076A patent/EP1859081A2/fr not_active Withdrawn
- 2006-03-13 WO PCT/FR2006/000547 patent/WO2006097611A2/fr not_active Ceased
- 2006-03-13 TW TW095108484A patent/TW200634179A/zh unknown
- 2006-03-13 US US11/908,692 patent/US8288009B2/en not_active Expired - Fee Related
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| See references of WO2006097611A2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008533302A (ja) | 2008-08-21 |
| FR2883299A1 (fr) | 2006-09-22 |
| FR2883299B1 (fr) | 2007-06-15 |
| TW200634179A (en) | 2006-10-01 |
| US20080124832A1 (en) | 2008-05-29 |
| WO2006097611A2 (fr) | 2006-09-21 |
| US8288009B2 (en) | 2012-10-16 |
| WO2006097611A3 (fr) | 2007-08-23 |
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