EP1825325A4 - Polymere mit niedrigem brechungsindex als unterschichten für siliciumhaltige photoresisten - Google Patents

Polymere mit niedrigem brechungsindex als unterschichten für siliciumhaltige photoresisten

Info

Publication number
EP1825325A4
EP1825325A4 EP05857596A EP05857596A EP1825325A4 EP 1825325 A4 EP1825325 A4 EP 1825325A4 EP 05857596 A EP05857596 A EP 05857596A EP 05857596 A EP05857596 A EP 05857596A EP 1825325 A4 EP1825325 A4 EP 1825325A4
Authority
EP
European Patent Office
Prior art keywords
underlayers
silicon
refractive index
low refractive
index polymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05857596A
Other languages
English (en)
French (fr)
Other versions
EP1825325A1 (de
Inventor
Wu-Song Huang
Sean Burns
Mahmoud Khojasteh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/013,971 external-priority patent/US7326523B2/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP1825325A1 publication Critical patent/EP1825325A1/de
Publication of EP1825325A4 publication Critical patent/EP1825325A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
EP05857596A 2004-12-16 2005-11-30 Polymere mit niedrigem brechungsindex als unterschichten für siliciumhaltige photoresisten Withdrawn EP1825325A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/013,971 US7326523B2 (en) 2004-12-16 2004-12-16 Low refractive index polymers as underlayers for silicon-containing photoresists
US11/195,566 US7439302B2 (en) 2004-12-16 2005-08-02 Low refractive index polymers as underlayers for silicon-containing photoresists
PCT/US2005/043210 WO2006096221A1 (en) 2004-12-16 2005-11-30 Low refractive index polymers as underlayers for silicon-containing photoresists

Publications (2)

Publication Number Publication Date
EP1825325A1 EP1825325A1 (de) 2007-08-29
EP1825325A4 true EP1825325A4 (de) 2010-05-26

Family

ID=36953687

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05857596A Withdrawn EP1825325A4 (de) 2004-12-16 2005-11-30 Polymere mit niedrigem brechungsindex als unterschichten für siliciumhaltige photoresisten

Country Status (2)

Country Link
EP (1) EP1825325A4 (de)
WO (1) WO2006096221A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9193678B2 (en) 2009-03-02 2015-11-24 Oxford Advanced Surfaces Ltd Chemical agents capable of forming covalent 3-D networks

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1109066A1 (de) * 1999-12-16 2001-06-20 Fuji Photo Film Co., Ltd. Chemisch verstärkte, negativ arbeitende Resistzusammensetzung für Elektronenstrahlen oder Röntgenstrahlen
US20020076641A1 (en) * 2000-09-07 2002-06-20 Samsung Electronics Co., Ltd. Photosensitive polymer having fused aromatic ring and photoresist composition containing the same
WO2003058345A2 (en) * 2002-01-09 2003-07-17 Clariant International Ltd Negative-working photoimageable bottom antireflective coating
US20040072420A1 (en) * 2002-10-15 2004-04-15 Brewer Science, Inc Anti-reflective compositions comprising triazine compounds

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0051320B1 (de) * 1980-11-05 1986-06-04 Nec Corporation Strahlenempfindliches negatives Resistmaterial
JPH06324494A (ja) * 1993-05-12 1994-11-25 Fujitsu Ltd パターン形成材料およびパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1109066A1 (de) * 1999-12-16 2001-06-20 Fuji Photo Film Co., Ltd. Chemisch verstärkte, negativ arbeitende Resistzusammensetzung für Elektronenstrahlen oder Röntgenstrahlen
US20020076641A1 (en) * 2000-09-07 2002-06-20 Samsung Electronics Co., Ltd. Photosensitive polymer having fused aromatic ring and photoresist composition containing the same
WO2003058345A2 (en) * 2002-01-09 2003-07-17 Clariant International Ltd Negative-working photoimageable bottom antireflective coating
US20040072420A1 (en) * 2002-10-15 2004-04-15 Brewer Science, Inc Anti-reflective compositions comprising triazine compounds

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2006096221A1 *

Also Published As

Publication number Publication date
WO2006096221A1 (en) 2006-09-14
EP1825325A1 (de) 2007-08-29

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20070626

AK Designated contracting states

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: BURNS, SEAN

Inventor name: KHOJASTEH, MAHMOUD

Inventor name: HUANG, WU-SONG

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20100426

RIC1 Information provided on ipc code assigned before grant

Ipc: G03C 1/76 20060101ALI20100420BHEP

Ipc: G03F 7/09 20060101AFI20100420BHEP

17Q First examination report despatched

Effective date: 20111212

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20121005