EP1782448A1 - New material for vapor sources of alkali and alkaline earth metals and a method of its production - Google Patents

New material for vapor sources of alkali and alkaline earth metals and a method of its production

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Publication number
EP1782448A1
EP1782448A1 EP05773154A EP05773154A EP1782448A1 EP 1782448 A1 EP1782448 A1 EP 1782448A1 EP 05773154 A EP05773154 A EP 05773154A EP 05773154 A EP05773154 A EP 05773154A EP 1782448 A1 EP1782448 A1 EP 1782448A1
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EP
European Patent Office
Prior art keywords
particles
gallium
metal
particle
water
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EP05773154A
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German (de)
French (fr)
Inventor
Konstantin Chuntonov
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Nanoshell Materials Research & Development GmbH
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Nanoshell Materials Research & Development GmbH
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Priority claimed from PCT/EP2004/051880 external-priority patent/WO2005112067A1/en
Application filed by Nanoshell Materials Research & Development GmbH filed Critical Nanoshell Materials Research & Development GmbH
Priority to EP05773154A priority Critical patent/EP1782448A1/en
Publication of EP1782448A1 publication Critical patent/EP1782448A1/en
Withdrawn legal-status Critical Current

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Definitions

  • the present invention relates to the technology of the creation of anticorrosive coatings on extremely sensitive metal particles, specifically introducing an efficient industrial method of encapsulation of intermetallic particles A n Ga m , where A is an alkali or alkaline earth metal and n and m are indices.
  • the chemically active material according to the present invention can be used as vapor source of alkali and alkaline earth metals in the production of photoemission devices, in the production of organic light emitting diodes, in the production of film chemisorbents.
  • Particles of intermetallic compounds of the general formula A n Ga m can be used as convenient sources of the metal A component in a variety of vacuum technologies for producing thin films of metal A (see Chuntonov K.A., Postovalov V.G., Kesarev A.G. Vacuum 55 (1999) pages 101-107).
  • A is an alkaline or an alkaline earth metal
  • m and n are stoichometric indices
  • the Me film solidifies reliably insulating the sensitive intermetallic core material of the particle against the environment.
  • the thickness of the coating Me is determined by the leaching time, and the choice of the extractant L is determined by the melting point of the metal Me and the requirement of efficient wetting of the crystal A n Me m with its cover of melted metal Me in the presence of L.
  • water can serve as an extractant (RU 2056661 CI) owing to its suitable physical constants.
  • organic extractants with higher temperature boundaries for the liquid state must be used, e.g. polyatomic alcohols, carboxylic acids, etc. (WO 03/031100).
  • the main detrimental aspect is the high tendency of as-encapsulated particles to conglutination.
  • the mass which is collected in the receiver of the extraction column is far from uniform: only a small part of the product consists of separately encapsulated particles, whereas the major part must be described as agglomerates of conglutinated particles containing residues of the extractant L in their voids. Removal of these residues of the extractant L and its reaction byproducts (metal hydroxides, alkoxides, carboxylates etc.) from such a material is not an easy task as any attempts to separate the conglutinated particles either mechanically or chemically lead to damage of the protective shell of the particles.
  • the unacceptable quality of the product obtained following the technology of prior methods (RU 2056661 CI) and (WO 03/031100) is also caused by variations in the structure of the initial materials.
  • a polycrystalline structure of the particles is unfavourable for efficient encapsulation: during the leaching process any granules with needle or laminar structures melt into a spherical shape; this process proceeds very fast and leads to an unacceptable loss of the active component A.
  • the extractant penetrates along the grain boundaries of the polycrystallites into the particle and is immured there after the formation of the outside shell, contaminating the particle.
  • the present inventor conducted experiments and showed that the disadvantages of the extraction method in its prior variants can be overcome with the help of new solutions based on a) using a pre-floatation state of the intermetallic particles while it reacts with water, b) the phenomenon of self-passivation of the coating metal when it is subjected to a controlled exposure to water and air, and c) observing strict requirements regarding the microstructure of the initial particles and considering their structure on the molecular level.
  • a new encapsulation technology which can be carried out in two variants, a conveyor and a cassette methodology, has been developed as applied specifically to A n Ga m particles.
  • the gallides provide a particularly high grade of purity.
  • An unprecedented quality of the particles prepared by the new method is guaranteed by carefully selecting the starting material, by keeping the particles isolated from each other prior to passivation, and by a sequence of process steps which e.g. make any cleaning of the metallic particles from residues of organic extractants, such as from stearic acid or glycerol (WO 03/031 100) unnecessary.
  • the process is also not only yielding a better product and is more economical, but also environmentally benign because it uses no solvents other than water.
  • Another object of the present invention is to provide chemically active materials, which are especially qualified as perfect vapor sources of alkali and alkaline earth metals.
  • the above-stated objects of the invention can be attained by a process for the production of monocrystalline binary intermetallic compounds defined by the general formula A n Ga m with 0 ⁇ n ⁇ 22 and 0 ⁇ m ⁇ 39, wherein n and m are indices and wherein compound A is a metal and is selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, calcium, strontium, barium and radium, comprising the steps of a) leaching of single crystals of the compound of said formula A n Ga m in water, which dissolves metal A, but which cannot dissolve gallium, at a temperature which is higher than the melting point of gallium, to produce a melted cover layer consisting essentially of gallium metal b) terminating the treatment as soon as the desired thickness of the coating is reached, c) solidification of the cover layer made of gallium metal, and d) passivation of the gallium cover layer of the particles.
  • steps a), b), c) and d) are carried out with individual particles isolated from each other to prevent any aggregation.
  • Leaching according to step a) of the compound of the formula A n Ga m is carried out on a support, especially a mesh made of metal.
  • the termination of the treatment in step b) is reached by lowering the temperature below the melting point of gallium metal.
  • the preferred thickness of the gallium coating is 10 ⁇ m, the average diameter of the A n Ga m particles is in the range from 0.2 mm to 3.5 mm.
  • the monocrystalline particles of the formula A n Ga m grown from a stoichometric melt or from a melt with a small excess of gallium, are used as the initial material, the monocrystals of the compound A n Ga m being chosen from the group consisting of LiGa, NaGa*, Na 22 Ga 39 , KGa , RbGa 3 , CsGa 3 , CsgGa ⁇ , CaGa 4 , Ca Ga 8 , SrGa 4 , SrGa 2 and BaGa 4 ,.
  • a particle in the beginning a particle is exposed to hot water on a slowly rotating horizontal mesh, whereafter the particle is thrown down into a small extraction column where in the lower cold part of the column the melted gallium-shell solidifies (step c) and the particles get on to a conveyor belt moving the particles to air followed by a rinsing of the product and rapid passivation of the gallium surface layer of the particles according to step d) is carried out in streams of water and/or air including drying of the particles with an air-flow.
  • a metallic sieve divided into a large number of cells is employed to carry the A n Ga m particles, which after loading with particles is placed into an extraction tank and exposed to water for the set time, and wherein hot water is subsequently displaced by cold water from below by feeding it upwards through a damping mesh and creating a hydrodynamic backing, which induces crystallisation of a gallium shell under non- contact conditions when a particle is in a suspension state, and wherein passivation of the created gallium shell by intensive rinsing of particles with distilled water and blowing with dustfree atmospheric air is conducted.
  • the chemically active material according to the present invention can be used as vapor source of alkali and alkaline earth metals in the production of photoemission devices and in the production of organic light emitting diodes, as chemisorbent including getters for vaporable and non- vaporable substrates, in the production of gas filters and sealed vacuum apparatus, for use as a source for active metals in chemical synthesis in the form of a catalyst or as a reaction component to produce chemicals and alloys, as well as in supplementation pumps and/or particle accelerators.
  • the inventor of the present invention found that the extraction method according to the present invention offers high reproducibility in the properties of encapsulated particles and the required purity of the product then and only then, when monocrystalline A n Ga m particles (single crystals), grown from a melt of a strictly stoichiometric composition or from a melt with a small excess of gallium, are used as the initial material.
  • the material used for the monocrystalline A n Ga m particles can contain impurities of up to 3 atomic percent of base metals including iron, nickel, molybdenum, tungsten, chromium and titanium.
  • X-ray diffraction analysis of particles can serve as a convenient means of initial material quality control.
  • An example of such control is given in Fig. 7 and 8 and also in Fig. 9a, 9b, 10a, and 10b, showing morphology of crystal LiGa and Cs 8 Ga ⁇ i correspondingly.
  • the second important step in the technological improvement of the process consists in the replacement of bulky extraction columns by small baths containing metallic mesh devices serving as a support for the particles.
  • the effect of the bubble jacket depends on the particle size: for particles smaller than 0.2 mm the tendency to floating-up is strong, while for particles larger than about 3.5 mm partial extrusion of gallium melt from under a particle and the appearance of coating defects is observed.
  • the optimum size for encapsulation of the particles was found to be in the range from about 0.2 mm to about 3.5 mm. This range determines properly the borders of mesh applicability in the extraction method.
  • the method according to the present invention eliminates the mentioned drawback due to the usage of monocrystalline particles and due to the passivation of the gallium coating, which eliminates the ability of the particles to conglutinate. Also the isolated treatment of the particles under conditions of the absence of contact between them provides very high yield of the end product.
  • the method according to the present invention provides a practical solution for the problem of production of chemically active materials with guaranteed high purity and this method for the first time allows manufacturing this kind of materials on an industrial scale.
  • the conveyer-variant The process of leaching and formation of a protective coating is performed in the following way. In the beginning, a particle is exposed to hot water on a slowly rotating horizontal mesh (Fig. 2). Subsequently, the particle is thrown into a small extraction column, in the lower, cold part of which the melted shell of gallium metal solidifies, and the particle is then placed onto a moving conveyer belt, which exposes it to the air and subjects it to a series of operations of rinsing and air passivation of the coating, including finally drying of the particle in a stream of air.
  • the conveyer variant is characterized by a continuous motion of the treated particles one by one in certain intervals, and their sequential transfer from one technological zone to the other. In each of the zones a set of conditional parameters is maintained.
  • the cassette- variant Unlike in the previous case, in this variant a large number of particles, isolated from each other, simultaneously and at once undergo a sequence of states, which constitutes the essence of the encapsulation process. The change of the states occurs by changing the parameters of the media into which the treated particles are placed.
  • a metallic sieve divided into a large number of cells, one particle in each, is put into a tank with hot water for a set time. Then, the hot water is displaced by cold water from below (Fig. 5). The cold water is fed upwards through a damping mesh and is creating a hydrodynamic backing allowing crystallization of the gallium shell of the particles under non-contact conditions with the particle in a suspension state.
  • the remains of the alkaline solution are removed and the passivation process of the cover layer of the particles is started.
  • the particles are rinsed and dried with a fan, the procedure being repeated several times.
  • both variants are based on the same set and sequence of technological stages: leaching of an active component A from the surface of a monocrystalline particle and formation of a molten gallium coating; crystallisation of this coating either at immersing the particle into cold water under the influence of gravitation forces, or while the particle is in a suspension state in upward water flows; passivation of the as-created shell of gallium metal by extensive rinsing of the particles with distilled water and blowing with dust-free atmospheric air.
  • the new technology and the new products have the following advantages: the new material in a form of monocrystalline particles of A n Ga m with a gallium coating is characterized by higher chemical purity and stability of physical parameters than previous products; consequently, the new material is a vapor source for metal A of higher, unprecedented quality; the new technology is more perfect and simple, it allows increasing the yield of the product per time unit by a large factor and to increase the capacity of the extraction method to an industrial level.
  • the new material according to the present invention can be used in the production of thin films by vacuum deposition. Especially it can be used in the production of photoemission devices, in the production of organic light emitting diodes and in the production of film chemisorbents.
  • Fig. 1 shows a particle of A n Ga m in hot water on a metal mesh support. a) 1 - intermetallic core, 2 - an island of molten Ga on a particle surface, 3 - stainless steel mesh, 4 - hydrogen bubbles; b) free access for water to the entire particle surface; c) free outlet of the products of dissolution of metal A in H 2 O from the particle surface.
  • Fig. 2 is a general plan view of the conveyer line.
  • a doser 5 can be moved along the arch NM and than be fixed.
  • a device for pushing a particle into a column (see 3 in Fig. 6) is not shown here.
  • the packaging line can direct the particles to any of the two positions, A or B.
  • Fig. 3 is a longitudinal section of the apparatus. 1 - a heater, 2 - an extraction column, 3 - a stepper motor shaft (see 7 in Fig. 2.); 4 - a plate with a mesh; 5 - a discharge pipe; 6 - a refrigerator; 7 - a funnel; 8 - a transporter; 9 - a conduit; 10 - a water inlet; 1 1 - a particle; 12 - a shower; 13 - a receiving funnel of a rinsing basin; 14 - a silicone serpentine tube; 15 - a cuvette; 16 - a transporter; 17 - a guiding collar; 18 - a discharge pipe.
  • a particle is placed on the mesh and pushed with a jet into the column 2, where it falls down with a rate V.
  • a gas jacket serves as an excellent lubrication and the falling rate is sufficiently fast, about 0.1 m/s.
  • the Ga-shell solidifies. Through the funnel 7 the particles get into the moving conveyer 8, and then with its help reach the rinsing basins 12 - 13 - 14 - 15.
  • the collar 17 retains the particles in the track. Subsequently, the transporter 16 brings the particles to the second rinsing basin, and so on.
  • Fig. 4 is a scheme of rinsing and drying. a) 1 - a sieve in a rectangular frame; 2 - a metal carcass; 3 - a stainless steel mesh; 4 - hooks or protrusions for hanging the sieve in a tank or a bath; 5 - honey-combs made of metal foil; b) 1 - a bath; 2 - a carcass with a sieve; 3 - a shower; 4 - clamps; 5 - a detachable bottom of a bath; 6 - a valve; 7 - a mesh with particles.
  • the honey-combs 5 and the sieve 1 are shown separately for better understanding.
  • the detachable bottom of a bath 5 (Fig. 4b) is connected to the lower flange of bath 1 through a sealing gasket with the help of clamps 4.
  • Fig. 5 is an apparatus for the cassette method. a) 1 - a tank; 2 - a carcass with a sieve; 3 -hooks, 4 - a discharge pipe; 5 - a vessel with pure water; 6 - a thermocouple; 7 - a valve; 8 - a refrigerator; 9 - a damping mesh; 10 - a resistive heater; 11 - a valve; b) 1 - a resistive heater; 2 - a flange; 3 - a thermocouple.
  • the sieve 2 with the particles is inserted into the tank 1 with heated water and from the moment, when gas bubbles appear, the exposure time starts to be counted off. After the leaching process is over, the valve 7 is opened and ice-cold water replaces the hot water. The hot water is let out through the pipe 4.
  • Fig. 6 shows the upper part of the extraction apparatus (see also 1 - 9 in Fig. 2) 1 - an extraction column; 2 - a doorway in a bath wall; 3 - an injector for wash-off of a particle; 4 - a plate; 5 - a stepper motor shaft; 6 - hot air flows; 7 - a doser spout; 8 - a bath body; 9 - a radial partition; 10 -a discharge pipe valve; 11 - a mesh; 12 - a flat clamping disk; 13 - hot water; 14 - heaters; 15 - a falling particle.
  • a doser spout 7 is a nozzle with two channels, through which hot air is constantly fed for preventing appearance of condensate on the wall of the inside channel. At the moment when rotation of the plate 4 is stopped the dozer throws the next particle into the bath. During the same stop the injector 3, the lower end of which is always down in hot water, injects the set portion of water, which pushes the particle exposed in the bath into the extraction column.
  • Fig. 7 shows the single crystal X-ray diffraction pattern of LiGa (cubic).
  • Fig. 8 shows single crystal X-ray diffraction pattern of Cs 8 Ga ⁇ (rhombohedral).
  • Fig. 9a, 9b show single crystals of LiGa.
  • the agglomerate (before crushing) clearly shows the cubic symmetry of the individual crystal.
  • Fig. 10a, 10b show single crystals of Cs 8 Ga ⁇ j.
  • the extraction column 1 and a cylindrical bath 2, in which a mesh disk 4 is placed, represent the complete reservoir (Fig. 2).
  • the mesh disk is tightly pressed from below to a plate 4 (Fig. 6), which is fixed to a shaft 5 and connected with a stepper motor 7 as also shown in Fig. 2.
  • Partitions 6 are inserted into the radial clearances of the plate, forming the side walls of the cells 8.
  • the outside cylindrical surface of the plate and the inside cylindrical surface of the bath serve as the other borders of the cells.
  • the process time is divided into small alternating intervals ⁇ r m and ⁇ s : the plate rotates for ⁇ m seconds, then for ⁇ s seconds it is motionless, and at this stage, during the time ⁇ r m , the disk turns to an angle corresponding to an arc ⁇ / (Fig. 2).
  • the operation of the apparatus is tuned in such a way that by the moment, when a particle is known to acquires a uniform gallium coating, its cell coincides with a doorway 9 in the cylindrical wall of the bath (Fig. 2), then during the stop time ⁇ r s this particle is carried to the extraction column (Fig.6) by a submerged jet, created by an injector 3 (Fig. 6).
  • a new particle is thrown into a cell, which is k units away from the cell coinciding with the doorway 9,counting against the direction of the disk movement (Fig. 2).
  • T is the total extraction time
  • t is the time of a particle's passing through the hot zone of the extraction column.
  • the height of the extraction column is 10 to 15 times shorter than in the method proposed previously (RU 2056661 CI) and does not exceed one meter.
  • a particle is moving through the upper zone, heated by the heater 1 (Fig. 3), it is still reacting with water and has a molten shell.
  • the trajectory of the falling particles is characterized by a certain scattering cone.
  • the diameter of the column should be bigger than the base of a scattering cone.
  • the gallium shell of the particles solidifies in ice-cold water, cooled with the help of an outside cooler 6, and then the particles are focused through a funnel 7 to a median of a conveyor belt 8 (Fig.
  • This setup with a cascade of four basins guarantees a cleaning of the product from metal hydroxides (OH " anions) to reach lower a pH.
  • OH " anions metal hydroxides
  • the rinsing result is even better, because the concentration of the alkaline solution in the extraction column never reaches 1% due to constant renewal of the water mass in the column (see 5 and 10 in Fig. 3).
  • the final stage of the process is the drying of the particles.
  • a water jet with particles flows from the last rinsing basin with a rate, the horizontal constituent of which is close to the speed of the mesh belt of the long conveyor 17 (Fig. 2).
  • a row of fans 16 (see also a-a) is installed above the belt, which creates laminar filtered airflows with the temperature kept between 12 and 15°C.
  • the dry particles arrive at a distributor 18, which either routes the product for charging into the corresponding containers, e.g. boats, or into dust free boxes where they are stored in unpacked form at a temperature not higher than 18-20°C.
  • a sieve 1 (Fig. 4), consisting of a light carcass 2, mesh 3 and thin-walled honey-combs 5, is charged - in a fume box under n-heptane - with particles of A n Ga m . Then this sieve is placed into an extraction tank 1 (Fig. 5a), hanging it on hooks 3 (see also 4 in Fig. 4a). In the part of the tank where the particles are located, water is heated with the help of a low-inertia insulated resistive element 10 (see also 1 in Fig. 5 b) up to close to the boiling point. In the lower part of the tank, under the metallic mesh 9, the water has a temperature close to the temperature of melting ice.
  • the leaching process lasts not longer than 2 minutes, after which a valve 7 is opened and cold water, moving upwards, replaces hot water, which flows out through discharge pipes 4. With the temperature decrease the jacket of gas bubbles, surrounding each particle, starts decreasing and then disappears. Owing to this effect, for maintaining particle floatability the rate of the cold water feed is gradually increased up to the value of ⁇ V s (see text to Fig. 3), such that crystallization of the shell of gallium metal takes place without any contact with the mesh.
  • the time required for the solidification of the shell of gallium metal does not exceed 2 seconds. Therefore rinsing of the tank with cold water is stopped as soon as the temperature of the water flowing through the pipes 4 reaches about 5°C.
  • the sieve is taken out from the tank and transferred to the washing bath 1 (Fig. 4b). From above a shower 3 is moved to the bath, water is switched on, and the bath is filled to a level that the particles are covered with water.
  • the water is drained through a valve 6, the rinsing procedure is repeated 4 - 5 times, the shower device 3 is replaced by an air fan for dust free laminar air flow, the bottom 5 of the bath is taken away and drying of the particles is started.
  • the particles feature the required degree of purity with respect to residual AOH contaminants, and a passivated gallium coating.
  • encapsulated Cs 8 Ga ⁇ particles For manufacturing encapsulated Cs 8 Ga ⁇ particles according to the conveyer variant 1, monocrystalline particles of the composition CsgGa ⁇ with an average linear size of 2 mm are charged to a doser 5 (Fig. 2), where they are kept under n-heptane.
  • the water temperature in an extraction bath 2 and in the upper zone of column 1 is set to the range of 96 - 98°C, the water temperature in the lower zone of the column to about 0°C.
  • the height of the hot zone of the column is 0.75 m, the height of the hot zone is 0.25 m.
  • the temperature of the running water in the four rinsing basins is about 10°C.
  • the capacity of the conveyer line in a steady state regime is about 50 g of encapsulated particles per hour.
  • the final product are particles of CsgGan in a shell of gallium metal with the maximum baking temperature of 220° C and an evaporation temperature for cesium metal of 275° C and above.
  • the baking temperature of such a product is not higher than 280 °C and evaporation becomes noticeable starting from 320 °C.
  • monocrystalline Na 22 Ga 9 particles are charged under n-heptane into a sieve with hexangular cells with an edge length of 4 mm.
  • the total number of particles in one charge is about 8.000 items.
  • the sieve is moved down into a tank with water kept at a temperature of 94 - 96°C and the particles are thus exposed to the bath for 75 seconds before they are rinsed with ice-cold water for 2 minutes. Subsequently the particles are rinsed with a shower four times and dried with air as described above for the cassette variant. The whole procedure takes approximately 15 minutes for one load of particles. The capacity of the given method is about 70 g of encapsulated particles per hour.
  • the final product are particles of Na 22 Ga 9 in a shell of gallium metal with a maximum baking temperature of 350°C and an evaporation temperature for sodium metal of 475°C and above.

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  • Manufacture And Refinement Of Metals (AREA)

Abstract

The present invention relates to a method of production of a new material, consisting of a) a leaching of component A from the surface of particles of the composition AnGam upon exposure to hot water on a special support b) solidification of the cover layer of gallium metal in ice-cold water, and c) passivation of the gallium surface layer of the particles in streams of pure water and air. The product has the form of singular particles of monocrystalline intermetallic compounds of the general formula AnGam with a continuous gallium surface coating for usage in evaporators of metal A, where A is an alkali or alkaline earth metal. The average diameter of the particles is in the range from about 0.2 mm to about 3.5 mm, the gallium coating is thicker than 10 µm.

Description

NEW MATERIAL FOR VAPOR SOURCES OF ALKALI AND ALKALINE EARTH METALS AND A METHOD OF ITS PRODUCTION
BACKGROUND OF THE INVENTION
1. Field of the invention
The present invention relates to the technology of the creation of anticorrosive coatings on extremely sensitive metal particles, specifically introducing an efficient industrial method of encapsulation of intermetallic particles AnGam, where A is an alkali or alkaline earth metal and n and m are indices. The chemically active material according to the present invention can be used as vapor source of alkali and alkaline earth metals in the production of photoemission devices, in the production of organic light emitting diodes, in the production of film chemisorbents.
2. Description of background of information
Particles of intermetallic compounds of the general formula AnGam, where A is an alkaline or an alkaline earth metal and m and n are stoichometric indices, when covered by a shell of gallium metal, can be used as convenient sources of the metal A component in a variety of vacuum technologies for producing thin films of metal A (see Chuntonov K.A., Postovalov V.G., Kesarev A.G. Vacuum 55 (1999) pages 101-107). For the first time a method of creating inert metallic layers on the surface of chemically active intermetallic compounds was developed for the gallides of alkali metals (RU 2056661 CI). This concept was later generalized and spread to the whole class of AnMem type compounds containing fusible and insensitive metals like Ga, In, Sn, etc. as Me, and alkali, alkaline earth or rare-earth metals as A (WO 03/031100).
The fundamental difference between the methodology described in RU 2056661 CI and WO 03/031 100 described in the prior art is the concept that the material necessary for the formation of a cover layer is not deposited from outside sources, but is drawn from the intrinsic resource of the treated substance, i.e. from a component of the intermetallic compound. According to the new method, a particle AnMem is immersed in a special liquid extractant L at a temperature T > Tf , where T is the melting point of the pure metal Me. The active component A dissolves in L, leaving an excess of the second component Me on a particle surface which turns into a continuous film of metal Me in the form of a melt. As the temperature of L is decreased to T < Tf, the Me film solidifies reliably insulating the sensitive intermetallic core material of the particle against the environment. The thickness of the coating Me is determined by the leaching time, and the choice of the extractant L is determined by the melting point of the metal Me and the requirement of efficient wetting of the crystal AnMem with its cover of melted metal Me in the presence of L. For the production of a Ga-coating, water can serve as an extractant (RU 2056661 CI) owing to its suitable physical constants. For In- or Sn-coatings, organic extractants with higher temperature boundaries for the liquid state must be used, e.g. polyatomic alcohols, carboxylic acids, etc. (WO 03/031100).
The extraction method of encapsulation of intermetallic particles AnMem in the form suggested by the prior art (RU 2056661 CI or WO 03/03 00) works satisfactorily at a laboratory scale but is not suitable for industrial usage because it requires voluminous equipment and gives low yields of high quality product.
The main detrimental aspect is the high tendency of as-encapsulated particles to conglutination. As experience has demonstrated, the mass which is collected in the receiver of the extraction column is far from uniform: only a small part of the product consists of separately encapsulated particles, whereas the major part must be described as agglomerates of conglutinated particles containing residues of the extractant L in their voids. Removal of these residues of the extractant L and its reaction byproducts (metal hydroxides, alkoxides, carboxylates etc.) from such a material is not an easy task as any attempts to separate the conglutinated particles either mechanically or chemically lead to damage of the protective shell of the particles.
Another drawback of the prior art is the large size of the extraction equipment. Thus, the characteristic reaction time for producing a satisfactory gallium coating on the intermetallic surface of a particle takes about two minutes. Experiments of the inventor of the present invention have shown that for the encapsulation of, e.g., AnMem particles with a diameter in the range from about 1 mm to 2 mm with an average sinking rate in hot water of about 10''m/s, the height only of the hot zone of the extraction column must be not less than 12 m.
Finally, the unacceptable quality of the product obtained following the technology of prior methods (RU 2056661 CI) and (WO 03/031100) is also caused by variations in the structure of the initial materials. In particular, it was noticed that a polycrystalline structure of the particles is unfavourable for efficient encapsulation: during the leaching process any granules with needle or laminar structures melt into a spherical shape; this process proceeds very fast and leads to an unacceptable loss of the active component A. Quite generally, the extractant penetrates along the grain boundaries of the polycrystallites into the particle and is immured there after the formation of the outside shell, contaminating the particle.
Even monocrystalline particles grown from a melt with an excess of component A have been observed to perform badly as vapor sources, because they may contain micro inclusions of metal A. On heating in a vacuum such particles are found to explode yielding to the inner vapor pressure of metal A, which leads to a scattering of particle fragments in the vacuum chamber and to oscillations of the vapor flow rate.
SUMMARY OF THE INVENTION
The present inventor conducted experiments and showed that the disadvantages of the extraction method in its prior variants can be overcome with the help of new solutions based on a) using a pre-floatation state of the intermetallic particles while it reacts with water, b) the phenomenon of self-passivation of the coating metal when it is subjected to a controlled exposure to water and air, and c) observing strict requirements regarding the microstructure of the initial particles and considering their structure on the molecular level.
For this purpose, a new encapsulation technology which can be carried out in two variants, a conveyor and a cassette methodology, has been developed as applied specifically to AnGam particles. As compared to other compounds of the type AnMem, the gallides provide a particularly high grade of purity. An unprecedented quality of the particles prepared by the new method is guaranteed by carefully selecting the starting material, by keeping the particles isolated from each other prior to passivation, and by a sequence of process steps which e.g. make any cleaning of the metallic particles from residues of organic extractants, such as from stearic acid or glycerol (WO 03/031 100) unnecessary. In total, the process is also not only yielding a better product and is more economical, but also environmentally benign because it uses no solvents other than water.
It is thus an object of the present invention to provide a method for the production of protective coatings on the surface of chemically active materials according to which not only a better product is yielded but where the processes are also more economical and environmentally beneficial.
Another object of the present invention is to provide chemically active materials, which are especially qualified as perfect vapor sources of alkali and alkaline earth metals.
The above-stated objects of the invention can be attained by a process for the production of monocrystalline binary intermetallic compounds defined by the general formula AnGam with 0 < n < 22 and 0 < m < 39, wherein n and m are indices and wherein compound A is a metal and is selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, calcium, strontium, barium and radium, comprising the steps of a) leaching of single crystals of the compound of said formula AnGam in water, which dissolves metal A, but which cannot dissolve gallium, at a temperature which is higher than the melting point of gallium, to produce a melted cover layer consisting essentially of gallium metal b) terminating the treatment as soon as the desired thickness of the coating is reached, c) solidification of the cover layer made of gallium metal, and d) passivation of the gallium cover layer of the particles.
According to another embodiment of the present invention the monocrystalline binary intermetallic compounds are defined by the general formula AnGam with 1 < n 22 and 2 < m < 39, wherein n and m are stoichometric indices from a natural sequence (positive integers) n = 1 , 2, 3, 4 ...; m = 1, 2, 3, 4 ..., and wherein compound A is a metal and is selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, calcium, strontium, barium and radium.
According to the invention said steps a), b), c) and d) are carried out with individual particles isolated from each other to prevent any aggregation. Leaching according to step a) of the compound of the formula AnGam is carried out on a support, especially a mesh made of metal. The termination of the treatment in step b) is reached by lowering the temperature below the melting point of gallium metal. The preferred thickness of the gallium coating is 10 μm, the average diameter of the AnGam particles is in the range from 0.2 mm to 3.5 mm. The monocrystalline particles of the formula AnGam, grown from a stoichometric melt or from a melt with a small excess of gallium, are used as the initial material, the monocrystals of the compound AnGam being chosen from the group consisting of LiGa, NaGa*, Na22Ga39, KGa , RbGa3, CsGa3, CsgGaπ, CaGa4, Ca Ga8, SrGa4, SrGa2 and BaGa4,.
According to one embodiment of the invention in the beginning a particle is exposed to hot water on a slowly rotating horizontal mesh, whereafter the particle is thrown down into a small extraction column where in the lower cold part of the column the melted gallium-shell solidifies (step c) and the particles get on to a conveyor belt moving the particles to air followed by a rinsing of the product and rapid passivation of the gallium surface layer of the particles according to step d) is carried out in streams of water and/or air including drying of the particles with an air-flow.
According to another embodiment of the invention, in step a) a metallic sieve divided into a large number of cells is employed to carry the AnGam particles, which after loading with particles is placed into an extraction tank and exposed to water for the set time, and wherein hot water is subsequently displaced by cold water from below by feeding it upwards through a damping mesh and creating a hydrodynamic backing, which induces crystallisation of a gallium shell under non- contact conditions when a particle is in a suspension state, and wherein passivation of the created gallium shell by intensive rinsing of particles with distilled water and blowing with dustfree atmospheric air is conducted.
The above stated object of the invention can also be attained by the chemically active material comprising the protective coating on their surface obtainable by the above explained process with steps a) to d).
The chemically active material according to the present invention can be used as vapor source of alkali and alkaline earth metals in the production of photoemission devices and in the production of organic light emitting diodes, as chemisorbent including getters for vaporable and non- vaporable substrates, in the production of gas filters and sealed vacuum apparatus, for use as a source for active metals in chemical synthesis in the form of a catalyst or as a reaction component to produce chemicals and alloys, as well as in supplementation pumps and/or particle accelerators.
The main advantages of the specific form of the material according to the invention and the methods of their preparation are: a) a significant improvement of the quality of the vapor source particles; b) compact and efficient equipment; und c) a multiple increase of the production capacity.
A radical change in the technological concept of the extraction method according to RU 2056661 CI, as a result of which it turns from a laboratory method into an industrial method of manufacturing encapsulated granules of the formula AnGam, arises from three innovations: regulation of the quality of the initial intermetallic particles, leaching on a metallic mesh as a support, and rapid passivation of the solid coating on separated particles.
The inventor of the present invention found that the extraction method according to the present invention offers high reproducibility in the properties of encapsulated particles and the required purity of the product then and only then, when monocrystalline AnGam particles (single crystals), grown from a melt of a strictly stoichiometric composition or from a melt with a small excess of gallium, are used as the initial material.
The requirement of monocrystallinity of the initial AnGam particles as a necessary condition to guarantee purity and stability of parameters of the end product is formulated with reference to the extraction method for the first time and is a priority requirement for the new modification of this method. As far as it is easier to grow monocrystals of congruently melting compounds or peritectic phases with a wide concentration interval for crystallization, further on under the general formula AnGam we understand intermetallic compounds of this very type. According to the data on phase diagrams they include the following gallides: LiGa, NaGai, Na22Ga3 , KGa3, RbGa3, CsGa3, Cs8Gan, CaGa4, Ca3Ga8, SrGa^ SrGa2, and BaGa^
According to the present invention is shall be understood that the material used for the monocrystalline AnGam particles can contain impurities of up to 3 atomic percent of base metals including iron, nickel, molybdenum, tungsten, chromium and titanium.
X-ray diffraction analysis of particles can serve as a convenient means of initial material quality control. An example of such control is given in Fig. 7 and 8 and also in Fig. 9a, 9b, 10a, and 10b, showing morphology of crystal LiGa and Cs8Gaι i correspondingly.
The second important step in the technological improvement of the process consists in the replacement of bulky extraction columns by small baths containing metallic mesh devices serving as a support for the particles. On this support, a jacket of gas bubbles surrounding the particle which reacts with water, shields this particle from contacts with the mesh (Fig.l). That is, an AnGam particle placed in hot water on a metallic mesh behaves in the same way as in the absence of the mesh, "does not feel" it, and by exploiting this condition it becomes possible to simplify the whole extraction equipment and reduce it in size as illustrated below.
However, the effect of the bubble jacket depends on the particle size: for particles smaller than 0.2 mm the tendency to floating-up is strong, while for particles larger than about 3.5 mm partial extrusion of gallium melt from under a particle and the appearance of coating defects is observed. The optimum size for encapsulation of the particles (related to the ratio of gravity force to buoyant force) was found to be in the range from about 0.2 mm to about 3.5 mm. This range determines properly the borders of mesh applicability in the extraction method.
The exposure of AnGam particles to hot water on metallic mesh thus also allows obtaining continuous gallium coating and is an alternative to extraction columns without support. At this, the new solution reduces the dimensions of the extraction equipment by a large factor and lowers the production cost. Finally, one more of the serious drawbacks of the prior art RU 2056661 CI and WO 03/031 100, vie. the conglutination and formation of agglomerates of coated particles, has been overcome by including a controlled treatment of the particles with water and air immediately after solidification of their gallium shell. The tendency of the particles to conglutinate, caused by the very high purity of the as-formed gallium surface with its low melting point is lost in only a few minutes in the process of absorption by this surface of oxygen and other heteroatoms from water and air. Accordingly, in the treatment of the particles while they are kept separate, passivation of the solidified gallium coating is accomplished and the particles lose their ability to adhere to each other.
Also the drawback of the previous methods (RU 2056661 and WO 03/031 100) is that contamination of the product inevitably took place at the stage of encapsulation: penetration of an extractant into the volume of the particle along the grain boundaries during leaching and immurement of the extractant during conglutination of the gallium coated particles while they are collected in a receiver of the technological column.
The method according to the present invention eliminates the mentioned drawback due to the usage of monocrystalline particles and due to the passivation of the gallium coating, which eliminates the ability of the particles to conglutinate. Also the isolated treatment of the particles under conditions of the absence of contact between them provides very high yield of the end product.
So the method according to the present invention provides a practical solution for the problem of production of chemically active materials with guaranteed high purity and this method for the first time allows manufacturing this kind of materials on an industrial scale.
Taking into consideration the concepts presented above and recent experimental observations, two technological solutions have been designed for organizing the encapsulation process, comprising the form of a conveyor line and an apparatus of periodic action.
The conveyer-variant: The process of leaching and formation of a protective coating is performed in the following way. In the beginning, a particle is exposed to hot water on a slowly rotating horizontal mesh (Fig. 2). Subsequently, the particle is thrown into a small extraction column, in the lower, cold part of which the melted shell of gallium metal solidifies, and the particle is then placed onto a moving conveyer belt, which exposes it to the air and subjects it to a series of operations of rinsing and air passivation of the coating, including finally drying of the particle in a stream of air. In summary, the conveyer variant is characterized by a continuous motion of the treated particles one by one in certain intervals, and their sequential transfer from one technological zone to the other. In each of the zones a set of conditional parameters is maintained.
The cassette- variant: Unlike in the previous case, in this variant a large number of particles, isolated from each other, simultaneously and at once undergo a sequence of states, which constitutes the essence of the encapsulation process. The change of the states occurs by changing the parameters of the media into which the treated particles are placed.
A metallic sieve divided into a large number of cells, one particle in each, is put into a tank with hot water for a set time. Then, the hot water is displaced by cold water from below (Fig. 5). The cold water is fed upwards through a damping mesh and is creating a hydrodynamic backing allowing crystallization of the gallium shell of the particles under non-contact conditions with the particle in a suspension state.
Subsequently, the remains of the alkaline solution are removed and the passivation process of the cover layer of the particles is started. For this the particles are rinsed and dried with a fan, the procedure being repeated several times.
Summarizing the short descriptions, both variants are based on the same set and sequence of technological stages: leaching of an active component A from the surface of a monocrystalline particle and formation of a molten gallium coating; crystallisation of this coating either at immersing the particle into cold water under the influence of gravitation forces, or while the particle is in a suspension state in upward water flows; passivation of the as-created shell of gallium metal by extensive rinsing of the particles with distilled water and blowing with dust-free atmospheric air.
Elements of principal novelty of the technology are:
- introduction of a standard for the materials which enter the treatment, requiring monocrystallinity of the AnGam particles and limitation of their average linear size to the range between 0.2 mm and 3.5 mm; a process of leaching of component A generating a melted gallium coating on the AnGam particles by exposing them to hot water on a metallic mesh; crystallisation of the gallium coating under contactless conditions under cold water fed through a mesh from below upwards; an independent operation of passivation of the solidified gallium coating with the help of rinsing the particles while they are separated from each other with water and exposing them to a stream of air.
The new technology and the new products have the following advantages: the new material in a form of monocrystalline particles of AnGam with a gallium coating is characterized by higher chemical purity and stability of physical parameters than previous products; consequently, the new material is a vapor source for metal A of higher, unprecedented quality; the new technology is more perfect and simple, it allows increasing the yield of the product per time unit by a large factor and to increase the capacity of the extraction method to an industrial level. the new material according to the present invention can be used in the production of thin films by vacuum deposition. Especially it can be used in the production of photoemission devices, in the production of organic light emitting diodes and in the production of film chemisorbents.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 shows a particle of AnGam in hot water on a metal mesh support. a) 1 - intermetallic core, 2 - an island of molten Ga on a particle surface, 3 - stainless steel mesh, 4 - hydrogen bubbles; b) free access for water to the entire particle surface; c) free outlet of the products of dissolution of metal A in H2O from the particle surface.
Initially, the leaching reaction proceeds most vigorously (Fig. la) with strong gas release. As the islands of gallium metal on the surface increase (Fig. lb) the fraction of unreacted surface becomes smaller and accordingly the kinetics of gas release decreases. At the final stage of the process (Fig. lc) the entire particle surface is covered with a layer of melted gallium metal and the reaction changes to the diffusion-controlled regime.
Fig. 2 is a general plan view of the conveyer line. 1 - an extraction column, 2 - an extraction bath; 3 - a particle in a cell, 4 - two abutting cells of a mesh disk; 5 - a doser; 6 - a radial partition; 7 - a stepper motor; 8 - a cell open for throwing a particle down into the column; 9 - a doorway in a side wall of the bath; 10 - a conveyer belt (see also 16 in Fig. 3); 11- a receiving funnel of the first rinsing basin (corresponding to funnel 13 in Fig. 3); 12 - the second funnel; 13 - a conduit for the conveyer belt (see also 15 in Fig. 3); 14 - the third funnel; 15 - the forth funnel; 16 - an air fan with a filter; 17 - a mesh conveyer belt; 18 - a packaging line.
During the process tuning, a doser 5 can be moved along the arch NM and than be fixed. A device for pushing a particle into a column (see 3 in Fig. 6) is not shown here. The packaging line can direct the particles to any of the two positions, A or B.
Fig. 3 is a longitudinal section of the apparatus. 1 - a heater, 2 - an extraction column, 3 - a stepper motor shaft (see 7 in Fig. 2.); 4 - a plate with a mesh; 5 - a discharge pipe; 6 - a refrigerator; 7 - a funnel; 8 - a transporter; 9 - a conduit; 10 - a water inlet; 1 1 - a particle; 12 - a shower; 13 - a receiving funnel of a rinsing basin; 14 - a silicone serpentine tube; 15 - a cuvette; 16 - a transporter; 17 - a guiding collar; 18 - a discharge pipe. A particle is placed on the mesh and pushed with a jet into the column 2, where it falls down with a rate V. In a hot zone the resulting force influencing the particle movement is not large. However, a gas jacket serves as an excellent lubrication and the falling rate is sufficiently fast, about 0.1 m/s. In the cold zone, where the viscosity of water increases and the particles lose the gas jacket, their movement is slowed down to the Stokes rate Vs. Here the Ga-shell solidifies. Through the funnel 7 the particles get into the moving conveyer 8, and then with its help reach the rinsing basins 12 - 13 - 14 - 15.
A flexible serpentine tube 14, by compressing or stretching it vertically, allows adjusting the optimum regime for water outlet to maintain an acceptable interval between the particles. The collar 17 retains the particles in the track. Subsequently, the transporter 16 brings the particles to the second rinsing basin, and so on.
Fig. 4 is a scheme of rinsing and drying. a) 1 - a sieve in a rectangular frame; 2 - a metal carcass; 3 - a stainless steel mesh; 4 - hooks or protrusions for hanging the sieve in a tank or a bath; 5 - honey-combs made of metal foil; b) 1 - a bath; 2 - a carcass with a sieve; 3 - a shower; 4 - clamps; 5 - a detachable bottom of a bath; 6 - a valve; 7 - a mesh with particles. In Fig. 4 the honey-combs 5 and the sieve 1 are shown separately for better understanding. The detachable bottom of a bath 5 (Fig. 4b) is connected to the lower flange of bath 1 through a sealing gasket with the help of clamps 4.
Fig. 5 is an apparatus for the cassette method. a) 1 - a tank; 2 - a carcass with a sieve; 3 -hooks, 4 - a discharge pipe; 5 - a vessel with pure water; 6 - a thermocouple; 7 - a valve; 8 - a refrigerator; 9 - a damping mesh; 10 - a resistive heater; 11 - a valve; b) 1 - a resistive heater; 2 - a flange; 3 - a thermocouple.
The sieve 2 with the particles is inserted into the tank 1 with heated water and from the moment, when gas bubbles appear, the exposure time starts to be counted off. After the leaching process is over, the valve 7 is opened and ice-cold water replaces the hot water. The hot water is let out through the pipe 4.
As the water temperature decreases the gas jackets disappear and the floatability of the particles decreases. Therefore the hydraulic thrust load is gradually increased, adjusting the rate of raising the water closer to the value Vs, which is defined beforehand for each sort of particles in an auxiliary station. Due to the small thickness of the gallium coating its crystallisation on a crystalline substrate AnGam in cold water requires only a few seconds. After solidification of the shell the sieve with the particles is lifted for the transfer into a washing bath, and the water from the tank is discharged onto the initial level while the valve 7 is closed and the valve 1 1 is open. Then the valve 1 1 is closed and the apparatus is ready for the next process.
Fig. 6 shows the upper part of the extraction apparatus (see also 1 - 9 in Fig. 2) 1 - an extraction column; 2 - a doorway in a bath wall; 3 - an injector for wash-off of a particle; 4 - a plate; 5 - a stepper motor shaft; 6 - hot air flows; 7 - a doser spout; 8 - a bath body; 9 - a radial partition; 10 -a discharge pipe valve; 11 - a mesh; 12 - a flat clamping disk; 13 - hot water; 14 - heaters; 15 - a falling particle.
A doser spout 7 is a nozzle with two channels, through which hot air is constantly fed for preventing appearance of condensate on the wall of the inside channel. At the moment when rotation of the plate 4 is stopped the dozer throws the next particle into the bath. During the same stop the injector 3, the lower end of which is always down in hot water, injects the set portion of water, which pushes the particle exposed in the bath into the extraction column.
Fig. 7 shows the single crystal X-ray diffraction pattern of LiGa (cubic).
Fig. 8 shows single crystal X-ray diffraction pattern of Cs8Gaπ (rhombohedral).
Fig. 9a, 9b show single crystals of LiGa. The agglomerate (before crushing) clearly shows the cubic symmetry of the individual crystal.
Fig. 10a, 10b show single crystals of Cs8Gaι j.
DETAILLED DESCRIPTION OF THE PREFERRED EMBODIMENTS
First embodiment according to the present invention: The conveyer variant
The extraction column 1 and a cylindrical bath 2, in which a mesh disk 4 is placed, represent the complete reservoir (Fig. 2). The mesh disk is tightly pressed from below to a plate 4 (Fig. 6), which is fixed to a shaft 5 and connected with a stepper motor 7 as also shown in Fig. 2. Partitions 6 are inserted into the radial clearances of the plate, forming the side walls of the cells 8. The outside cylindrical surface of the plate and the inside cylindrical surface of the bath serve as the other borders of the cells.
For convenience of automation, the process time is divided into small alternating intervals Δrm and Δτs : the plate rotates for Δτm seconds, then for Δτs seconds it is motionless, and at this stage, during the time Δrm , the disk turns to an angle corresponding to an arc Δ/ (Fig. 2).
The operation of the apparatus is tuned in such a way that by the moment, when a particle is known to acquires a uniform gallium coating, its cell coincides with a doorway 9 in the cylindrical wall of the bath (Fig. 2), then during the stop time Δrs this particle is carried to the extraction column (Fig.6) by a submerged jet, created by an injector 3 (Fig. 6).
Simultaneously, from a doser 7 (Fig. 6) a new particle is thrown into a cell, which is k units away from the cell coinciding with the doorway 9,counting against the direction of the disk movement (Fig. 2). The number k is defined as the nearest integer to k* which is equal to ' k* = ( T - t ) / ( Δrm + Δrs ) ,
where T is the total extraction time, and t is the time of a particle's passing through the hot zone of the extraction column.
The height of the extraction column is 10 to 15 times shorter than in the method proposed previously (RU 2056661 CI) and does not exceed one meter. As long as a particle is moving through the upper zone, heated by the heater 1 (Fig. 3), it is still reacting with water and has a molten shell. The trajectory of the falling particles is characterized by a certain scattering cone. In order to avoid any touching of a column wall by the particles and damaging the particle's shell, the diameter of the column should be bigger than the base of a scattering cone. In the lower part of the extraction column, the gallium shell of the particles solidifies in ice-cold water, cooled with the help of an outside cooler 6, and then the particles are focused through a funnel 7 to a median of a conveyor belt 8 (Fig. 3). Subsequently the particles are moved up along a belt inclined upwards and to the air. In this process, the liquid taken from the extraction system trickles back and only a very small amount of it is carried together with the particles into the first rinsing basin by a jet 12.
From a funnel 13 the particle with its water cover is moved into a flexible silicone serpentine tube 14 and further onto the next conveyor belt 16 (Fig. 3), which brings the particle to the second rinsing basin. This procedure is repeated.
The ratio of fresh running water to the residual liquid, washed off from the conveyor belt into a receiving funnel of the next basin, is approximately 100:1. This setup with a cascade of four basins guarantees a cleaning of the product from metal hydroxides (OH" anions) to reach lower a pH. In reality the rinsing result is even better, because the concentration of the alkaline solution in the extraction column never reaches 1% due to constant renewal of the water mass in the column (see 5 and 10 in Fig. 3).
The final stage of the process is the drying of the particles. A water jet with particles flows from the last rinsing basin with a rate, the horizontal constituent of which is close to the speed of the mesh belt of the long conveyor 17 (Fig. 2). A row of fans 16 (see also a-a) is installed above the belt, which creates laminar filtered airflows with the temperature kept between 12 and 15°C. At the end of a given line the dry particles arrive at a distributor 18, which either routes the product for charging into the corresponding containers, e.g. boats, or into dust free boxes where they are stored in unpacked form at a temperature not higher than 18-20°C.
Second embodiment according to the present invention: The cassette variant
A sieve 1 (Fig. 4), consisting of a light carcass 2, mesh 3 and thin-walled honey-combs 5, is charged - in a fume box under n-heptane - with particles of AnGam. Then this sieve is placed into an extraction tank 1 (Fig. 5a), hanging it on hooks 3 (see also 4 in Fig. 4a). In the part of the tank where the particles are located, water is heated with the help of a low-inertia insulated resistive element 10 (see also 1 in Fig. 5 b) up to close to the boiling point. In the lower part of the tank, under the metallic mesh 9, the water has a temperature close to the temperature of melting ice.
The leaching process lasts not longer than 2 minutes, after which a valve 7 is opened and cold water, moving upwards, replaces hot water, which flows out through discharge pipes 4. With the temperature decrease the jacket of gas bubbles, surrounding each particle, starts decreasing and then disappears. Owing to this effect, for maintaining particle floatability the rate of the cold water feed is gradually increased up to the value of ~ Vs (see text to Fig. 3), such that crystallization of the shell of gallium metal takes place without any contact with the mesh.
The time required for the solidification of the shell of gallium metal, the thickness of which usually varies in the range from 10 to 50 μm, does not exceed 2 seconds. Therefore rinsing of the tank with cold water is stopped as soon as the temperature of the water flowing through the pipes 4 reaches about 5°C. The sieve is taken out from the tank and transferred to the washing bath 1 (Fig. 4b). From above a shower 3 is moved to the bath, water is switched on, and the bath is filled to a level that the particles are covered with water. Subsequently, the water is drained through a valve 6, the rinsing procedure is repeated 4 - 5 times, the shower device 3 is replaced by an air fan for dust free laminar air flow, the bottom 5 of the bath is taken away and drying of the particles is started. After completion of this operation, the particles feature the required degree of purity with respect to residual AOH contaminants, and a passivated gallium coating.
The invention will now be described with reference to specific examples without limiting the invention. Example 1
For manufacturing encapsulated Cs8Gaπ particles according to the conveyer variant 1, monocrystalline particles of the composition CsgGaπ with an average linear size of 2 mm are charged to a doser 5 (Fig. 2), where they are kept under n-heptane. The water temperature in an extraction bath 2 and in the upper zone of column 1 is set to the range of 96 - 98°C, the water temperature in the lower zone of the column to about 0°C. Parameters of motion of the mesh disk are: Δrm = I s, Δτs = 2 s, T - 1 = 1 10 s, Δ/ = 6.2 mm. The height of the hot zone of the column is 0.75 m, the height of the hot zone is 0.25 m. The temperature of the running water in the four rinsing basins is about 10°C.
Adhering to the above set of parameters, the capacity of the conveyer line in a steady state regime is about 50 g of encapsulated particles per hour. The final product are particles of CsgGan in a shell of gallium metal with the maximum baking temperature of 220° C and an evaporation temperature for cesium metal of 275° C and above. CsGa particles are encapsulated analogously, with the only difference that in this case it is enough to set T - 1 = 80 s. The baking temperature of such a product is not higher than 280 °C and evaporation becomes noticeable starting from 320 °C. Example 2
For manufacturing encapsulated Na22Ga39 particles with an average linear size of 0.8 mm using the cassette variant, monocrystalline Na22Ga 9 particles are charged under n-heptane into a sieve with hexangular cells with an edge length of 4 mm. The total number of particles in one charge is about 8.000 items.
The sieve is moved down into a tank with water kept at a temperature of 94 - 96°C and the particles are thus exposed to the bath for 75 seconds before they are rinsed with ice-cold water for 2 minutes. Subsequently the particles are rinsed with a shower four times and dried with air as described above for the cassette variant. The whole procedure takes approximately 15 minutes for one load of particles. The capacity of the given method is about 70 g of encapsulated particles per hour. The final product are particles of Na22Ga 9 in a shell of gallium metal with a maximum baking temperature of 350°C and an evaporation temperature for sodium metal of 475°C and above.

Claims

Claims
1. A method for the production of gallium coated monocrystalline binary intermetallic compounds defined by the general formula
AnGam with 0 < n < 22 and 0 < m < 39, wherein n and m are indices, and wherein compound A is a metal and selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, calcium, strontium, barium, and radium, comprising the steps of: a) leaching of single crystal particles of the compound of the said formula AnGam in water, which dissolves metal (A), but which cannot dissolve gallium metal, at a temperature which is higher than the melting point of gallium, to produce on the surface of the particles a melted cover layer consisting essentially of gallium metal, b) terminating the treatment as soon as the desired thickness of the coating is reached, c) solidification of the cover layer of gallium metal by cooling the particles to a temperature below the melting point of gallium metal; d) passivation of the gallium cover layer of the particles.
2. The method according to claim 1 , wherein the intermetallic compounds are defined by the general formula AnGam with 1 < n < 22 and 1 < m < 39, wherein n and m are stoichometric indices, and wherein A is a metal selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, calcium, strontium, barium, and radium.
3. The method according to claim 1 or 2, wherein said steps a), b), c) and d) are carried out with the individual particles isolated from each other to prevent any aggregation.
4. The method according to claims 1 to 3, wherein the passivation of the gallium surface layer of the particles according to step d) is carried out in streams of water and/or air.
5. The method according to any of the preceding claims 1 to 4, wherein the leaching of step a) of the compound of the formula AnGam is carried out on a support, especially a mesh.
6. The method according to any of the preceding claims 1 to 5, wherein the termination of the treatment in step b) is accomplished by lowering the temperature below the melting point of gallium.
7. The method according to any of the preceding claims 1 to 6, wherein the thickness of the gallium coating is 10 μm or more.
8. The method according to any of the preceding claims 1 to 7, wherein the average diameter of the particles of the AnGam particles is in the range from 0.2 mm to 3.5 mm.
9. The method according to any of the preceding claims 1 to 8, wherein monocrystalline particles of the formula AnGam, grown from a stoichometric melt or from a melt with small excess of gallium, are used as the initial material.
10. The method according to any of the preceding claims 1 to 9, wherein monocrystals of compounds of the formula AnGam selected from the group consisting of LiGa, NaGa , Na22Ga39, KGa3, RbGa3, CsGa3, Cs8Gaπ, CaGa , Ca3Ga8, SrGa^ SrGa2 and BaGa are chosen in step a).
1 1. The method according to any of the preceding claims 1 to 10, wherein in step a) a particle of the formula AnGam is exposed to hot water on a slowly rotating horizontal mesh, whereafter " the particle is thrown down into a small extraction column wherein in the lower cold part of the column the melted gallium-shell solidifies and the particles get on to a conveyor belt moving the particles to air for rapid passivation, followed by rinsing of the product and drying of the particle with the air-flow.
12. The method according to any of the preceding claims 1 to 10, wherein in step a) a metallic sieve divided into a large number of cells is employed to carry the AnGam particles, which is placed into an extraction tank with hot water and exposed for the set time, displacing subsequently the hot water by cold water from below by feeding cold water upwards through a damping mesh and creating a hydrodynamic backing, which induces crystallisation of a gallium shell under non-contact conditions when a particle is in a suspension state, and where passivation of the created gallium shell by intensive rinsing of particles with distilled water and blowing with dust-free atmospheric air is the final step.
13. Chemically active materials in the form of singular particles of gallium coated monocrystalline intermetallic compounds of the general formula AnGam with a continuous gallium surface coating for usage in evaporators of metal A with 0 < n < 22 and 0 < m < 39, wherein n and m are indices, and wherein compound A is a metal and selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, calcium, strontium, barium, and radium, where the average diameter of the particles is in the range from about 0.2 mm to about 3.5 mm, the gallium coating is thicker than 10 μm, and wherein the materials are obtainable by the method according to one or more of the preceding claims 1 to 12.
14. Chemically active materials in the form of singular particles of gallium coated monocrystalline intermetallic compounds of the general formula AnGam with a continuous gallium surface coating for usage in evaporators of metal A with 1 < n < 22 and 1 < 39, wherein n and m are stoichometric indices, wherein compound A is a metal selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, calcium, strontium, barium, and radium, where the average diameter of the particles is in the range from about 0.2 mm to about 3.5 mm, the gallium coating is thicker than 10 μm, and wherein the materials are obtainable by the method according to one or more of the preceding claims 1 to 12.
15. Chemically active materials according to claims 13 or 14 as a vapor source of alkali and alkaline earth metals in the production of thin films by vacuum deposition.
EP05773154A 2004-08-23 2005-08-22 New material for vapor sources of alkali and alkaline earth metals and a method of its production Withdrawn EP1782448A1 (en)

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PCT/EP2004/051880 WO2005112067A1 (en) 2004-08-23 2004-08-23 New material for vapor sources of alkali and alkaline earth metals and a method of its production
PCT/EP2005/009060 WO2005119725A1 (en) 2004-08-23 2005-08-22 New material for vapor sources of alkali and alkaline earth metals and a method of its production
EP05773154A EP1782448A1 (en) 2004-08-23 2005-08-22 New material for vapor sources of alkali and alkaline earth metals and a method of its production

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Non-Patent Citations (1)

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See references of WO2005119725A1 *

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