EP1761942A1 - Vorrichtung zum beschichten optischer gläser mittels plasmaunterstützter chemischer dampfabscheidung (cvd) - Google Patents
Vorrichtung zum beschichten optischer gläser mittels plasmaunterstützter chemischer dampfabscheidung (cvd)Info
- Publication number
- EP1761942A1 EP1761942A1 EP05756963A EP05756963A EP1761942A1 EP 1761942 A1 EP1761942 A1 EP 1761942A1 EP 05756963 A EP05756963 A EP 05756963A EP 05756963 A EP05756963 A EP 05756963A EP 1761942 A1 EP1761942 A1 EP 1761942A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- reactor
- waveguide section
- microwave
- circular waveguide
- mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32284—Means for controlling or selecting resonance mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Definitions
- the invention relates to a device for coating optical glasses by means of plasma-assisted chemical vapor deposition (CVD), with a cylindrical reactor for receiving the glasses to be coated, and with at least one microwave generator for coupling a microwave signal of a predetermined microwave frequency into the reactor, the at least one microwave generator has a microwave source.
- CVD plasma-assisted chemical vapor deposition
- the at least one microwave generator has a microwave source.
- a transparent coating for example a scratch protection layer made of TiO 2 .
- the spectacle lenses to be coated are exposed in a reactor at a substrate temperature of 50 ° C. to a coating gas mixture with a pressure of 0.1 to 2 mbar.
- microwave energy is supplied to the reactor, for example at a frequency of 2.45 GHz.
- the microwave energy is sampled, with pulse lengths of 0.01 to 10 msec and pulse pauses of 1 to 1,000 msec with a pulse power of 10 to 100,000 W.
- cylindrical reactors have also been used.
- the most homogeneous possible distribution of the microwave field is advantageous in order to achieve a coating that is as uniform as possible.
- configurations are preferred for this application in which an oscillation mode of the microwave, which is symmetrical to the cylinder axis, propagates in the reactor.
- the reactors are fed by pulsed microwave sources, for example magnetrons.
- Magnetrons usually have an output that is designed as a standard rectangular waveguide.
- the microwave energy must therefore be injected from the rectangular waveguide into the cylindrical reactor.
- microwave sources with a rectangular waveguide output are also used, which have a cylindrical one Are coupled reactor and trigger the resonance processes there.
- US Pat. No. 5,172,083 proposes arranging a mode converter between the microwave source and the reactor in order to couple the microwave signal coming from the rectangular waveguide into the cylindrical reactor. This is to prevent undesirable vibration modes from occurring.
- mechanically very complex and large rectangular / cylinder waveguide transitions are proposed. The occurrence of undesirable vibration modes should therefore be prevented from the outset, while accepting the aforementioned effort.
- US Pat. No. 5,433,789 and US Pat. No. 5,646,489 also for ECR applications, state that conductive plates should be provided in a certain spatial arrangement in the transition between the microwave source and the reactor in order to prevent the occurrence of undesired oscillation modes due to electrical short circuits in the area of their electrical Prevent field lines.
- the invention is therefore based on the object of developing a plasma CVD coating device of the type mentioned at the outset such that the aforementioned disadvantages are avoided.
- the object underlying the invention is completely achieved in this way.
- the approach in the invention is different from that in the arrangements known from the field of ECR. While the undesired modes cannot occur in the first place, this is the case with the device according to the invention. deliberately allowed and the suppression of the undesired vibration mode takes place by causing it to interfere with itself and thus being extinguished. In practice, this enables much simpler constructions with considerably less space.
- the arrangements according to the invention have also proven to be particularly suitable for the special application in the plasma CVD method, in which - to the extent that, unlike in the ECR method - the plasma, which is under a higher pressure, reflects the coupled-in microwave energy to a considerable extent.
- the same applies to a much greater extent if, in order to further improve the homogeneity of the coating, work is carried out on a reactor with two opposing microwave generators which are directed towards one another, so that inevitably mutually determined microwave energy components are radiated into the other microwave generator.
- This measure has the advantage already mentioned that the homogeneity of the coating can be further improved without fear of a deterioration in the symmetry of the coupled desired vibration mode.
- the microwave source is a magnetron, the microwave frequency being in the S band and preferably being approximately 2.45 GHz.
- a particularly preferred exemplary embodiment of the invention is characterized in that the microwave source is connected to the mode interference filter via a rectangular waveguide, and that the mode interference filter only couples a first oscillation mode into the reactor, which is capable of symmetrical propagation in the reactor and a second oscillation mode suppressed, which would be asymmetrically spreadable in the reactor.
- the first vibration mode of type TM 01 and the second vibration mode of type TE n are preferred.
- the mode interference filter has at least two coaxial circular waveguide sections which adjoin one another in a radial plane, a first of which is coupled to the reactor, and that the round waveguide sections are dimensioned such that the first oscillation mode is only capable of propagation in the first circular waveguide section and the second oscillation mode in the first and in the second circular waveguide section.
- This measure has the advantage that a particularly simple and space-saving structure is created which retains the desired properties even in long-term use. In this way, the separation of the vibration modes or the extinction of the second vibration mode is achieved in a simple manner.
- the second circular waveguide section has a second diameter which is dimensioned such that the critical wavelength for the second oscillation mode at this diameter is smaller than the wavelength of the microwave signal.
- This measure also contributes to a simple structure.
- the length of the second circular waveguide section is preferably equal to an integer multiple of half the waveguide wavelength of the second oscillation mode in the second circular waveguide section.
- the length of the first circular waveguide section is not equal to an integer multiple of a quarter of the wavelength of the first oscillation mode in the first circular waveguide section.
- This measure has the advantage that the first circular waveguide section is neither a resonator nor an anti-resonator for the desired first oscillation mode. Therefore, there can be no fluctuations in the intensity of the microwave energy coupled into the reactor if there is a higher level in a resonator Goodness fluctuations in the structural condition would have a strong impact, for example a covering on a surface. On the other hand, avoiding anti-resonance means that no reflections occur.
- the length of the first circular waveguide section is equal to an odd integer multiple of a quarter of the wavelength of the second oscillation mode in the first circular waveguide section.
- This measure has the advantage that remaining portions of the undesired, second oscillation mode in the first waveguide section are extinguished.
- a particularly good effect is achieved when a section of the rectangular waveguide is coupled to the first circular waveguide section, with a narrow side of the section lying in the radial plane.
- This measure has the advantage that there are defined conditions at the transition from the rectangular to the circular waveguide.
- the rectangular waveguide is connected to the mode interference filter via a choke joint, which is preferably designed as a screwed-on ring.
- This measure has the advantage that it is possible to work with very high microwave powers in the kW range, without the fear of arcing, and that the coupling can be easily changed. It is further preferred if the first circular waveguide section is provided with a vacuum-tight window in the transition to the reactor.
- This measure has the advantage that the interior of the mode interference filter is decoupled from the negative pressure side and is therefore not exposed to the coating gas mixture.
- the first circular waveguide section is provided with a metallic screen in the transition to the reactor, the screen in particular on the side of the window facing away from the first circular waveguide section, i.e. is arranged in the vacuum region of the reactor.
- This measure has the advantage that concave surfaces of the glasses can be coated particularly well due to the limitation of the plasma expansion caused by the aperture.
- the mode interference filter has an outer body connected to the reactor and an inner body which can be inserted axially into the outer body, the circular waveguide sections being formed in the inner body and the rectangular waveguide section in the outer body and furthermore the inner body on Outer body is releasably attached.
- Figure 1 is an extremely schematic side view of an embodiment of a device according to the invention.
- FIG. 2 shows, on an enlarged scale, a sectional illustration of a microwave generator as used in the device according to FIG. 1.
- FIG. 1 10 as a whole designates an exemplary embodiment of a device according to the invention, namely a plasma CVD coating system.
- the system 10 contains a cylindrical reactor 12, the longitudinal axis of which is designated 14.
- the reactor is designed to be symmetrical about a radial center plane 15.
- an atmosphere is set which consists of a coating gas mixture, a predetermined negative pressure prevailing.
- supply lines 18 for the coating tion gas mixture and a vacuum connection 20 are provided.
- Carriers for the glasses to be coated, in particular spectacle lenses made of plastic or glass, are provided in the interior 16. These are known to the person skilled in the art and are therefore not shown for the sake of clarity.
- Microwave generators 24a, 24b are arranged on opposite end walls 22a and 22b so as to couple microwave energy symmetrically from both sides into interior space 16, namely in longitudinal axis 14.
- Microwave generators 24a, 24b each contain a microwave source 26a, 26b, for example a magnetron, which preferably operates in the S band, in particular at approximately 2.45 GHz, and delivers pulse powers in the kW range.
- the microwave sources 26a, 26b are connected via rectangular waveguides 28a, 28b to a mode interference filter 30a, 30b, from which the microwave energy is coupled into the interior 16.
- Each mode interference filter 30 has an inner body 32 and an outer body 33, which, of course, can also each be multi-part in practical embodiments.
- the bodies 32, 33 are preferably metallic.
- the inner body 32 contains a front part 34 and a rear part 35.
- the inner body 32 and the outer body 33 are arranged coaxially to the longitudinal axis 14, the inner body 32 in FIG. 2 can be inserted from the right into the outer body 33 and fastened to it in the inserted state.
- the inner body 32 is provided with a flange 36, which can be fixed to a radial end face of the outer body 33 with screws 37.
- the front part 34 encloses a first circular waveguide section 38 and the rear part 35 a second circular waveguide section 40.
- the circular waveguide sections 38, 40 are arranged coaxially with one another and with the axis 14. However, they have different dimensions, namely a diameter d x and a length l x for the first circular waveguide section 38 or a diameter d 2 and a length 1 2 for the second circular waveguide section 40.
- the dimensions of the lengths l ⁇ and 1 2 and the diameter d ⁇ and d 2 will be discussed further below.
- the round waveguide sections 38, 40 are provided in the inner body 32 with an electrically highly conductive surface, for example a gold coating.
- the first circular waveguide section 38 is electrically open at its left end in FIG. 2.
- the second circular waveguide section 40 is closed at its right end in FIG. 2 with an electrically conductive bottom 41.
- the base 41 can be designed as an axially movable piston for adjustment purposes.
- the circular waveguide sections 38, 40 merge into one another in a radial plane 42.
- a rectangular waveguide section 44 is also provided in the inner body 32, the narrow side 45 of which lies in the radial plane 42 and which is open to the first circular waveguide section 38.
- a flange 46 of the rectangular waveguide section 28 is screwed on in FIG.
- a so-called “choke joint” 48 or a throttle connection or coupling is provided in the transition from the rectangular waveguide section 44 to the first circular waveguide section 38.
- the choke joint 48 has a pocket slot of defined depth on the broad side of the rectangular waveguide section 28, which is like an interference filter
- the microwave penetrates there into the sack slot, is reflected at its end and interferes with half of the sack slot in such a way that the microwave intensity there becomes zero, thus creating an area of the smallest wall current at the point of transition Joint 48 not present, the maximum current would flow in the middle of the broad side of the rectangular waveguide section 44 with the permitted basic mode, and this would lead to arcing if there was a poor line transition.
- the choke joint 48 can be implemented as a screwed-on ring.
- the outer body 33 has at its left end in FIG. 2 a generator flange 50 for fastening the microwave generator 24 to the reactor 12.
- the generator flange 50 is screwed to a reactor flange 52 of the reactor 12.
- the reactor flange 52 sits tightly in the end wall 22 of the reactor 12.
- a window 58 is inserted into the end of the inner body 32 or the first circular waveguide section 38 that is to be directed toward the interior 16 of the reactor 12.
- the window 58 is preferably designed as a quartz window that is transparent to microwaves and glued into a conical fit 60 by means of a silicone adhesive.
- a metallic screen 62 is preferably arranged in front of the window 58 and is provided with a defined opening 64.
- the aperture 62 restricts the plasma expansion in the interior 16, which is useful for the coating of concavely curved surfaces.
- the device according to the invention works as follows:
- the microwave signal is emitted from the microwave sources 26a, 26b via the rectangular waveguides 28a, 28b. From these, the signal is coupled into the first circular waveguide section 38 via the rectangular waveguide section 44 (FIG. 2).
- the diameter d j of the first circular waveguide section 38 is first dimensioned such that the two vibration modes TM 01 and TE U can be propagated in it.
- the diameter d 2 of the second circular waveguide section 40 is dimensioned such that only the undesired vibration mode TE n , but not the desired vibration mode TM 01, can propagate in it.
- ⁇ c ( ⁇ Eii) 0 136.5 mm
- both vibration modes ie TM 01 and TE n , are capable of propagation.
- the desired vibration mode TM 01 thus only propagates in the left, first circular waveguide section 38 and is coupled from there through the window 58 into the interior 16 of the reactor.
- the undesirable asymmetrical vibration mode TE n spreads in both round waveguide sections.
- the length of the right, second waveguide section 40 is dimensioned such that it forms a ⁇ / 2 line for the asymmetrical vibration mode TE n , so that the short circuit of the preferably axially displaceable base 41 is transformed into the radial plane 42. It must be tuned to the waveguide wavelength ⁇ H of the vibration mode, which is always greater than the wavelength ⁇ ⁇ in a vacuum. The following applies to the waveguide wavelength ⁇ H :
- first waveguide section 38 it initially applies that it must not represent a resonator for the symmetrical vibration mode TM 01 . If this were the case, then, due to the high quality of the resonator thus formed, even the smallest fluctuations in the structure, for example a coating on the quartz window 58, would result in strong changes in intensity of the microwave signal coupled into the reactor 12.
- the length l x of the left, first waveguide section 38 must therefore not be equal to nx ⁇ H (TM01) 38/2 .
- This dimensioning of d lf d 2 , 1 1 and 1 2 means , at a given frequency, for the aforementioned vibration modes TE U and TM 0) on the one hand causes interference and thus cancellation of the undesired asymmetrical oscillation mode TE n .
- the reflection of microwave signals is minimized, namely within the mode interference filter 30 and from the interior 16 of the reactor 12 back through the window 58 into the mode interference filter 30. The latter applies regardless of whether these reflected portions originated from the own microwave generator 24b itself and were reflected on the plasma which is under relatively high pressure or are interspersed by the other, opposite microwave generator 24a.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200410030344 DE102004030344B4 (de) | 2004-06-18 | 2004-06-18 | Vorrichtung zum Beschichten optischer Gläser mittels plasmaunterstützter chemischer Dampfabscheidung (CVD) |
PCT/EP2005/006245 WO2005124820A1 (de) | 2004-06-18 | 2005-06-10 | Vorrichtung zum beschichten optischer gläser mittels plasmaunterstützter chemischer dampfabscheidung (cvd) |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1761942A1 true EP1761942A1 (de) | 2007-03-14 |
Family
ID=35501790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05756963A Withdrawn EP1761942A1 (de) | 2004-06-18 | 2005-06-10 | Vorrichtung zum beschichten optischer gläser mittels plasmaunterstützter chemischer dampfabscheidung (cvd) |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1761942A1 (de) |
DE (1) | DE102004030344B4 (de) |
WO (1) | WO2005124820A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102094184A (zh) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Pecvd上下同时镀膜方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4776918A (en) * | 1986-10-20 | 1988-10-11 | Hitachi, Ltd. | Plasma processing apparatus |
JPH0641633B2 (ja) * | 1990-08-27 | 1994-06-01 | 新日本製鐵株式会社 | マイクロ波プラズマ処理装置 |
US5262610A (en) * | 1991-03-29 | 1993-11-16 | The United States Of America As Represented By The Air Force | Low particulate reliability enhanced remote microwave plasma discharge device |
US5172083A (en) * | 1991-05-14 | 1992-12-15 | Nippon Steel Corporation | Microwave plasma processing apparatus |
DE4122802C1 (de) * | 1991-07-10 | 1992-12-17 | Schott Glaswerke, 6500 Mainz, De | |
JPH08978B2 (ja) * | 1991-10-28 | 1996-01-10 | 電気興業株式会社 | マイクロ波プラズマcvd装置 |
EP0725164A3 (de) * | 1992-01-30 | 1996-10-09 | Hitachi Ltd | Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Bearbeitung eines Halbleiters |
US5567241A (en) * | 1993-04-30 | 1996-10-22 | Energy Conversion Devices, Inc. | Method and apparatus for the improved microwave deposition of thin films |
US5611864A (en) * | 1994-03-24 | 1997-03-18 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma processing apparatus and processing method using the same |
EP0753082B1 (de) * | 1994-03-29 | 1999-07-07 | Schott Glas | Pcvd-verfahren und vorrichtung zur beschichtung von gewölbten substraten |
DE4414083C2 (de) * | 1994-04-22 | 2000-01-20 | Leybold Ag | Vorrichtung zum Herstellen dünner Schichten auf Kunststoff-Substraten und zum Ätzen solcher Substrate |
DE4445427C2 (de) * | 1994-12-20 | 1997-04-30 | Schott Glaswerke | Plasma-CVD-Verfahren zur Herstellung einer Gradientenschicht |
KR970071945A (ko) * | 1996-02-20 | 1997-11-07 | 가나이 쯔도무 | 플라즈마처리방법 및 장치 |
DE69807006T2 (de) * | 1997-05-22 | 2003-01-02 | Canon K.K., Tokio/Tokyo | Plasmabehandlungsvorrichtung mit einem mit ringförmigem Wellenleiter versehenen Mikrowellenauftragsgerät und Behandlungsverfahren |
DE10010766B4 (de) * | 2000-03-04 | 2006-11-30 | Schott Ag | Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten |
TW497367B (en) * | 2000-03-30 | 2002-08-01 | Tokyo Electron Ltd | Plasma processing apparatus |
DE10161469A1 (de) * | 2001-12-13 | 2003-07-03 | Schott Glas | Volumenoptimierter Reaktor zur beidseitig gleichzeitigen Beschichtung von Brillengläsern |
-
2004
- 2004-06-18 DE DE200410030344 patent/DE102004030344B4/de not_active Expired - Fee Related
-
2005
- 2005-06-10 EP EP05756963A patent/EP1761942A1/de not_active Withdrawn
- 2005-06-10 WO PCT/EP2005/006245 patent/WO2005124820A1/de not_active Application Discontinuation
Non-Patent Citations (1)
Title |
---|
See references of WO2005124820A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2005124820A1 (de) | 2005-12-29 |
DE102004030344B4 (de) | 2012-12-06 |
DE102004030344A1 (de) | 2006-01-12 |
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