EP1720062A3 - Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbour influence - Google Patents

Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbour influence Download PDF

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Publication number
EP1720062A3
EP1720062A3 EP06252354A EP06252354A EP1720062A3 EP 1720062 A3 EP1720062 A3 EP 1720062A3 EP 06252354 A EP06252354 A EP 06252354A EP 06252354 A EP06252354 A EP 06252354A EP 1720062 A3 EP1720062 A3 EP 1720062A3
Authority
EP
European Patent Office
Prior art keywords
influence
mask
model based
optical proximity
based optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06252354A
Other languages
German (de)
French (fr)
Other versions
EP1720062A2 (en
Inventor
Markus Franciscus Antonius Eurlings
Thomas Laidig
Uwe Hollerbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
ASML MaskTools Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML MaskTools Netherlands BV filed Critical ASML MaskTools Netherlands BV
Publication of EP1720062A2 publication Critical patent/EP1720062A2/en
Publication of EP1720062A3 publication Critical patent/EP1720062A3/en
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B15/00—Systems controlled by a computer
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B17/00—Systems involving the use of models or simulators of said systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Image Analysis (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)

Abstract

Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimising a mask pattern. However, conventional MOPC techniques do not account for influence from neighbouring features on a mask. This influence may be factored in the following manner - first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighbouring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimised accordingly. This process may be repeated until the mask pattern is further optimised.
EP06252354A 2005-05-05 2006-05-03 Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbour influence Withdrawn EP1720062A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/122,220 US7349066B2 (en) 2005-05-05 2005-05-05 Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence

Publications (2)

Publication Number Publication Date
EP1720062A2 EP1720062A2 (en) 2006-11-08
EP1720062A3 true EP1720062A3 (en) 2008-07-23

Family

ID=36636207

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06252354A Withdrawn EP1720062A3 (en) 2005-05-05 2006-05-03 Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbour influence

Country Status (7)

Country Link
US (1) US7349066B2 (en)
EP (1) EP1720062A3 (en)
JP (1) JP4464365B2 (en)
KR (1) KR100860329B1 (en)
CN (1) CN100576085C (en)
SG (1) SG126931A1 (en)
TW (1) TWI334961B (en)

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JP4952420B2 (en) * 2007-07-18 2012-06-13 大日本印刷株式会社 Method for verifying design pattern of photomask for multiple exposure technology
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JP5224853B2 (en) * 2008-02-29 2013-07-03 株式会社東芝 Pattern prediction method, pattern correction method, semiconductor device manufacturing method, and program
JP5463016B2 (en) * 2008-09-09 2014-04-09 株式会社ニューフレアテクノロジー Pattern data creation method
US8136069B2 (en) * 2009-04-14 2012-03-13 International Business Machines Corporation Accurate approximation of resistance in a wire with irregular biasing and determination of interconnect capacitances in VLSI layouts in the presence of Catastrophic Optical Proximity Correction
CN101995763B (en) * 2009-08-17 2012-04-18 上海宏力半导体制造有限公司 Optical proximity correction method
JP5627394B2 (en) * 2010-10-29 2014-11-19 キヤノン株式会社 Program for determining mask data and exposure conditions, determination method, mask manufacturing method, exposure method, and device manufacturing method
US8619236B2 (en) * 2010-11-24 2013-12-31 International Business Machines Corporation Determining lithographic set point using optical proximity correction verification simulation
JP6108693B2 (en) 2012-06-08 2017-04-05 キヤノン株式会社 Pattern creation method
CN103513506B (en) * 2012-06-19 2016-04-13 上海华虹宏力半导体制造有限公司 Optical proximity correction method
JP5674866B2 (en) * 2013-06-26 2015-02-25 株式会社ニューフレアテクノロジー Pattern data creation method, mask creation method, semiconductor device manufacturing method, pattern creation method, and program
CN103744265B (en) * 2014-01-29 2016-09-07 上海华力微电子有限公司 Improve the optical proximity correction method of process window
JP6570010B2 (en) * 2014-04-02 2019-09-04 ケーエルエー コーポレイション Method, system, and computer program product for generating a high-density registration map for a mask
US10430543B2 (en) * 2014-10-04 2019-10-01 Synopsys, Inc. Matrix reduction for lithography simulation
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10534257B2 (en) * 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
CN110709779B (en) * 2017-06-06 2022-02-22 Asml荷兰有限公司 Measuring method and apparatus
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
KR102708927B1 (en) 2018-04-10 2024-09-23 램 리써치 코포레이션 Optical metrology with machine learning to characterize features
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
EP3663856A1 (en) * 2018-12-07 2020-06-10 ASML Netherlands B.V. Method for adjusting a target feature in a model of a patterning process based on local electric fields
CN117454831B (en) * 2023-12-05 2024-04-02 武汉宇微光学软件有限公司 Mask pattern optimization method and system and electronic equipment

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EP1582934A2 (en) * 2004-03-31 2005-10-05 ASML MaskTools B.V. Apparatus, method and program product for suppressing waviness of features to be printed using photolithographic systems

Also Published As

Publication number Publication date
JP4464365B2 (en) 2010-05-19
TWI334961B (en) 2010-12-21
US7349066B2 (en) 2008-03-25
EP1720062A2 (en) 2006-11-08
KR20060115660A (en) 2006-11-09
SG126931A1 (en) 2006-11-29
KR100860329B1 (en) 2008-09-25
CN1892443A (en) 2007-01-10
CN100576085C (en) 2009-12-30
JP2006313353A (en) 2006-11-16
TW200707080A (en) 2007-02-16
US20060250589A1 (en) 2006-11-09

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