EP1711987A2 - Systeme amplificateur ultrarapide industriel pompe directement par diode - Google Patents

Systeme amplificateur ultrarapide industriel pompe directement par diode

Info

Publication number
EP1711987A2
EP1711987A2 EP05705148A EP05705148A EP1711987A2 EP 1711987 A2 EP1711987 A2 EP 1711987A2 EP 05705148 A EP05705148 A EP 05705148A EP 05705148 A EP05705148 A EP 05705148A EP 1711987 A2 EP1711987 A2 EP 1711987A2
Authority
EP
European Patent Office
Prior art keywords
gain media
amplifier
output
frequency conversion
fundamental
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05705148A
Other languages
German (de)
English (en)
Inventor
James D. Kafka
Jianping Zhou
Juerg Aus Der Au
Kevin Holsinger
Ventzislav Stoev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Newport Corp USA
Original Assignee
Spectra Physics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/762,216 external-priority patent/US7016107B2/en
Application filed by Spectra Physics Inc filed Critical Spectra Physics Inc
Publication of EP1711987A2 publication Critical patent/EP1711987A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/115—Q-switching using intracavity electro-optic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10069—Memorized or pre-programmed characteristics, e.g. look-up table [LUT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium

Definitions

  • This invention relates generally to ultrafast amplifier systems, and their methods of use, and more particularly to ultrafast amplifier systems with direct diode pumping of the gain media, and their methods of use.
  • Ultrafast amplifier systems have been used in both scientific and industrial applications for the last decade.
  • the most common system uses Ti:sapphire as the gain media and produces about 1 mJ of energy at 1 kHz repetition rate with a pulse duration of 150 fs. While these systems have found wide use in scientific applications, they do not fully satisfy the need for an industrial ultrafast amplifier.
  • the Ti:sapphire system requires green pump lasers for both the oscillator and amplifier and a directly diode-pumped system is needed to satisfy the desire for a simpler and more robust system.
  • Industrial applications also need higher average powers and consequently higher repetition rates but can tolerate longer pulse durations, possibly as long as 1 ps. A minimum energy of several hundred microjoules is also required for many applications.
  • Nd:YAG, Nd: YLF and Nd:YVO 4 have all been used and produce high average powers but the pulse durations produced are all greater than 1 ps.
  • Shorter pulse durations have been produced using Nd:glass and several Yb doped materials including Yb doped fibers, bulk Yb:glass, Yb:SYS, Yb:KGW and Yb:KYW. All of these systems produce subpicosecond pulses but most have not produced pulse energies of more than 200 microjoules. The few that have generated more than 200 microjoules, all operate at lower repetition rates and thus average powers of 1 W or less.
  • a cw Yb:YAG laser has been demonstrated using a thin disk geometry by U. Brauch et al. in Optics Letters vol. 20 page 713 (1995). They calculated that an amplifier could be constructed that would produce 200 fs pulses with 10 W of average power at 2 kHz yielding a pulse energy of 5 mJ, however no details were given and no high energy system has been demonstrated. There is a need for an ultrafast amplifier system that produces subpicosecond pulses with sufficient energy and average power and is sufficiently robust for material processing applications.
  • An object of the present invention is to provide an improved ultrafast amplifier system, and its methods of use.
  • Another object of the present invention is to provide an improved ultrafast amplifier system, and its methods of use, with direct diode pumping of the gain media.
  • a further object of the present invention is to provide an improved ultrafast amplifier system, and its methods of use, with computer resources that provide control of various operating parameters of the amplifier system.
  • a gain media is positioned in the amplifier cavity.
  • a diode pump source directly pumps the gain media and the amplifier system produces sub-picosecond pulses with an output power of 2 watts or more.
  • a frequency conversion device is included and receives a fundamental wavelength output from the amplifier and produces a second harmonic wavelength output.
  • Third harmonic, fourth harmonic, fifth harmonic and sixth harmonic generators may also be included.
  • a method is provided for material processing.
  • An amplifier system is provided that has a diode pump source configured to directly pump a gain media.
  • the amplifier system includes computer resources to control the operating parameters of the amplifier system.
  • An output beam of sub-picosecond pulses is produced with an output power of 2 watts or more. The output beam is applied to a material.
  • Figure 1 is a schematic diagram of one embodiment of an amplifier system of the present invention that includes computer resources utilized for control of the amplifier operating parameters.
  • An optional frequency conversion device is also included.
  • an amplifier system 10 of the present invention includes first and second reflectors 12 and 14 that define an amplifier cavity 16.
  • An oscillator 17 provides a seed pulse to the amplifier system.
  • the amplifier system 10 can be a chirped pulsed amplifier which contains a stretcher and compressor which are both dispersive delay lines using gratings.
  • the stretching and/or compressing can be done by prism pairs, optical fibers, photonic crystal fibers, Gires-Tournois interferometers, chirped mirrors, material dispersion in the amplifier, and the like.
  • media 18 is positioned in the amplifier cavity 16.
  • gain media 18 can be utilized including but not limited to, Yb:KGW, Yb:KYW, KYbW, Yb:KLuW, YbYAG, YbAG, YbYLF, Yb:SYS, Yb:BOYS, YbYSO, Yb:CaF 2 , Yb:Sc 2 O 3 , Yb:Y 2 O 3 , Yb:Lu 2 O 3 , Yb:GdCOB, Yb:glass and Nd:glass.
  • the gain media 18 can also be epitaxially grown or made of a ceramic material.
  • the gain media 18 is selected from Yb:KGW, Yb:KYW and KYbW.
  • the gain media 18 is kept in a dry atmosphere to prevent condensation. This can be done by sealing the entire amplifier cavity 16 or by providing a compartment around the gain media 18 with AR coated windows for the pump and amplifier beams to pass through.
  • a length and doping of the gain media 18 are selected to minimize heating of the gain media 18.
  • the Yb doping can be between 1% to 10%, 2% to 5 %, and the length of the gain media 18 can be between 2 mm and 20 mm, 4 mm and 12 mm, and the like.
  • the gain media 18 has beveled edges to reduce defects.
  • a post-processing step including but not limited to annealing, can be used to relieve stress and reduce defects.
  • the gain media 18 can be used at an orientation to optimize the absorption, gain, gain bandwidth, pulse duration, thermal conductivity and expansion and minimize nonlinear optical effects, thermo-mechanical and thermo-optical effects.
  • the direction of propagation through the gain media 18 and the polarization used can be chosen to optimize the gain, the bandwidth and/or the threshold for Raman generation.
  • the gain media 18 has a thin disk geometry, where the length of the gain media 18 is less than the width of the gain media.
  • the length of the gain media 18 can be less than the diameter of the pump beam.
  • the pump beam diameter can be from 100 microns to 2 mm
  • the thickness of the thin disk gain media 18 can be from 50 to 1000 microns.
  • the Yb doping of the thin disk can range from 5% to 100%).
  • a diode pump source 20 is provided. Diode pump source 20 directly pumps the gain media 18. Suitable diode pump sources 20 include but are not limited to, diode bars, diode stacks, fiber-coupled diode bars with multiple fibers in the bundle, single fiber-coupled laser diode bars, optically pumped semiconductor light sources and the like. The single fiber coupled bars can provide a high brightness pump source.
  • single fiber coupled bars can produce 30 W of pump power from a fiber that has a diameter of 200 to 400 microns and a numerical aperture of 0.22.
  • Pumping the gain media 18 directly with the pump source 20 is more efficient, cost effective and robust than using the pump source 20 to pump a laser which then pumps the gain media 18.
  • the amplifier system 10 produces sub-picosecond pulses with an output power of 2 watts or more. Suitable pulse durations can range from about 100 fs to 1 picosecond while still producing the desired effects that are suitable for a variety of different applications, including but not limited to materials processing.
  • a frequency conversion device 19 is provided.
  • Computer resources 22 are coupled to the amplifier system 10 and configured to provide control of operating parameters of the amplifier system 10, as more fully described hereafter.
  • a user interface 24 is provided.
  • an operator of amplifier system 10 can enter values for operating parameters including but not limited to the repetition rate of the amplifier system 10, adjust a shutter 26, adjust a length of a dispersive delay line 28, adjust the frequency conversion device 19, adjust a driver 30 to a switch 32 in the amplifier cavity 16 and the like.
  • Amplifier system 10 can include a Pockels cell as the intra-cavity switch 32.
  • the operating parameters can include but are not limited to a, (i) voltage level directed to the Pockels cell 32, (ii) timing of voltage to the Pockels cell 32, (iii) length of the dispersive delay line 28 and a repetition rate of the amplifier system 10, (iv) drive current and temperature of the diode pump source 20, (v) temperature of the gain media 18, (vi) angle and temperature of the frequency conversion device 19, and the like.
  • the voltage level and the timing of the voltage to the Pockels cell 32 are used to optimize energy and minimize pre-pulses.
  • the dispersive delay line 28 can be used to optimize output pulse duration.
  • some of the voltage, timing and delay line are re-optimized.
  • the repetition rate of the amplifier system 10 is increased, the gain is decreased and a larger number of round trips are required in the amplifier cavity.
  • the timing of the high voltage to the Pockels cell 32 is then adjusted to stay on longer and achieve the increased number of round trips to maximize the energy of the pulse. Since the number of round trips has increased, the length of the dispersive delay line 28 also needs to be adjusted in order to compensate and produce the shortest pulse, hi one embodiment, at least a portion of the operating parameters drift over time. For example, the value of the high voltage may not always be optimal to produce the maximum contrast ratio or the optimum stability of the output power.
  • the operating parameters can be used in a calibration mode of the amplifier system 10. That is, the value for the operating parameters can each be varied sequentially, or a genetic algorithm or fuzzy logic, can be used in order to optimize the energy, contrast ratio, pulse duration, system stability and/or conversion efficiency of the frequency conversion device 19.
  • the calibration mode can be run when, (i) at least a portion of the operating parameters drift over time, (ii) a parameter of the amplifier system 10 is changed, (iii) a repetition rate of the system is changed, (iv) the stability of the output power degrades, (v) the pump level to the gain media is adjusted, and the like.
  • the computer resources 22 can store target values for the operating parameters for each repetition rate.
  • examples of target values can include, the optimal timing for the high voltage and length of the dispersive delay line 28 to yield the highest pulse energy and shortest pulse for each repetition rate, as described above.
  • the operating parameters are adjusted continuously and automatically by the computer resources 22. For example, generating the second harmonic of the fundamental pulse can generate an error signal. This signal is directed to a photodiode 29 and is dependent on the pulse duration. If the pulse duration drifts the signal will decrease. The length of the dispersive delay line 28 can then be adjusted automatically until the second harmonic signal is increased to either its original value or to a maximum value.
  • error signals include but are not limited to, the energy of the second harmonic of the fundamental output pulse, the fundamental pulse energy itself, the stability of the output power, the magnitude of the pre-pulses as measured using a boxcar integrator, for example, an error signal generated directly from the material processing application, and the like.
  • a heat removal device 34 is coupled to the gain media 18 and is configured to allow the gain media 18 to scale to higher powers.
  • the gain media 18 is coupled to the heat removal device 34 by any number of ways including but not limited to brazing, surface activated bonding, and the like.
  • the gain media 18 can be coated with gold and braised to the heat removal device 34 using evaporated indium or indium foil.
  • the heat removal device 34 can be made from copper or copper-tungsten or similar materials. h one embodiment the heat removal device 34 includes a TE cooler. It will be appreciated that the present invention is not limited to a TE cooler, and other devices can be utilized including but not limited to, a cryogenic cooler, a thin film cooler, a heat pipe and the like. In one embodiment, the heat removal device 34 operates at a temperature less than 10 degree Celsius. The heat removal device 34 provides cooling of the gain media 18 to improve the gain, increase the gain bandwidth, increase the thermal conductivity and thus reduce a thermal gradient and/or reduce the absorption of a pumped gain media 18. In another embodiment of amplifier system 10, a frequency conversion device 19 is provided. The frequency conversion device 19 receives a fundamental wavelength output and produces a second harmonic wavelength output.
  • the frequency conversion device can produce a third, fourth, fifth or sixth harmonic of the fundamental wavelength.
  • a variety of materials can be used for frequency conversion device 19 including but not limited to, BBO, KDP, KD*P, CLBO, LBO and the like.
  • an efficiency of the second harmonic frequency conversion device 19 is at least 50%.
  • the fundamental wavelength output from the gain media 18 is from 1030 to 1050 nm, and the second harmonic wavelength is from 515 to 525 nm.
  • Other directly diode-pumped gain media operate in the wavelength range from 1020 to 1080 nm with the second hannonic wavelength then ranging from 510 to 540 nm, the third harmonic wavelength from 340 nm to 360 mn, the fourth harmonic wavelength from 255 to 270 nm, the fifth hannonic wavelength from 204 to 216 nm and the sixth harmonic wavelength from 170 to 180 nm.
  • the second harmonic wavelength in the green can be particularly suitable for material processing applications because optical components such as mirrors and AR coated lenses have long lifetimes at this wavelength. The lifetime of optical components becomes increasingly problematic at shorter wavelengths.
  • the second harmonic wavelength output can be focused to a spot that is substantially smaller in radius than the diffraction limited spot size of the fundamental wavelength output.
  • Frequency conversion by frequency conversion device 19 can increase a contrast ratio of amplifier system 10.
  • the contrast ratio between the main pulse and the pre-pulses is typically 10 for the fundamental wavelength.
  • the conversion efficiency that the main pulse experiences is 50% while the efficiency for the pre-pulses will be much lower, typically only 1 %.
  • the frequency doubling increases the contrast ratio to a value of 10 5 to 10 6 .
  • the same effect applies to the post-pulses where the contrast ratio will increase from 10 2 to as much as 10 4 .
  • the fundamental output has an energy of at least 200 microjoules.
  • the second hannonic output has an energy of at least 100 microjoules.
  • Amplifier system 10 can be utilized for a variety of different applications, including but not limited to material processing.
  • the output beam 36 can be directed to an imaging system, a scanning system or the like before being incident on the target material.
  • Suitable materials processing applications include but are not limited to, micro-machining, ablation, marking, modification of a material structure, writing of optical waveguides, and the like.
  • Ultrafast pulses of the present invention are desirable for micro-machining because the sample is not heated as much as with longer pulses and the heat affected zone (HAZ) is thus reduced.
  • Ultrafast pulses of the present invention can be used in ablation applications because they provide greater control over the amount of material that is ablated. Examples of ablation processes include but are not limited to, removing thin films from on top of dissimilar materials.
  • Ultrafast pulses of the present invention are used to write waveguides in transparent materials for integrated optics applications. These ultrafast pulses allow the index of the material to be modified appropriately without heating the surrounding material.
  • EXAMPLE 1 The ultrafast pulses of the present invention are used at the fundamental wavelength of 1048 nm to machine various materials. In one embodiment, 50 micron diameter round holes are drilled through 1 mm thick hardened steel. Using 2.5 NV of average power at 5 kHz repetition rate, the holes are completed in 20 seconds.
  • EXAMPLE 2 In this example, ultrafast pulses of the present invention are used for scribing of borosihcate glass with 30-micron wide, chip-free grooves. This is done at 2 kHz repetition rate and a scan speed of at least 10 mm/sec.
  • EXAMPLE 3 In this example, ultrafast pulses of the present invention are used for scribing of the nanocomposite Morthane with 26 micron wide and 20 micron deep clean grooves generated. The repetition rate is 5 kHz and 10 passes are required and a scan speed of at least 40 mm/sec can be used to generate these grooves.
  • EXAMPLE 4 In this example, ultrafast pulses of the present invention are used for the cutting of 770 micron thick white Teflon using 2.4 W average power at 5 kHz repetition rate. The cutting of clean grooves is done with 50 repeated passes and a scan speed of 50 mm/sec.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un système amplificateur pompé directement par diode, qui produit des impulsions de l'ordre de la sous-picoseconde, avec une puissance de sortie de 2 watts ou davantage. Les ressources informatiques sont couplées à un système amplificateur et sont configurées de manière à assurer la commande de paramètres d'exploitation du système amplificateur. Un éventuel second générateur d'harmoniques est prévu pour augmenter le rapport de contraste et réduire la dimension minimale du spot focal. Ce système amplificateur peut s'utiliser dans des applications de traitement de matériaux.
EP05705148A 2004-01-07 2005-01-07 Systeme amplificateur ultrarapide industriel pompe directement par diode Withdrawn EP1711987A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53508004P 2004-01-07 2004-01-07
US10/762,216 US7016107B2 (en) 2004-01-20 2004-01-20 Low-gain regenerative amplifier system
PCT/US2005/000369 WO2005069452A2 (fr) 2004-01-07 2005-01-07 Systeme amplificateur ultrarapide industriel pompe directement par diode

Publications (1)

Publication Number Publication Date
EP1711987A2 true EP1711987A2 (fr) 2006-10-18

Family

ID=34798841

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05705148A Withdrawn EP1711987A2 (fr) 2004-01-07 2005-01-07 Systeme amplificateur ultrarapide industriel pompe directement par diode

Country Status (2)

Country Link
EP (1) EP1711987A2 (fr)
WO (1) WO2005069452A2 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998052258A1 (fr) * 1997-05-12 1998-11-19 Dahm Jonathan S Procedes de decoupe au laser ameliores
US6002697A (en) * 1998-04-03 1999-12-14 Lambda Physik Gmbh Diode pumped laser with frequency conversion into UV and DUV range
US7046711B2 (en) * 1999-06-11 2006-05-16 High Q Laser Production Gmbh High power and high gain saturation diode pumped laser means and diode array pumping device
US6510169B2 (en) * 2001-02-14 2003-01-21 Forschungsinstitut Fur Mineralische Und Metallische Werkstoffe Edelsteine/Edemetalle Gmbh Method for generating laser light and laser crystal
US6741620B2 (en) * 2001-02-15 2004-05-25 Aculight Corporation Methods and devices for efficient generation of ultraviolet light
US6804287B2 (en) * 2002-02-02 2004-10-12 The Regents Of The University Of Colorado, A Body Corporate Ultrashort pulse amplification in cryogenically cooled amplifiers
US6760356B2 (en) * 2002-04-08 2004-07-06 The Regents Of The University Of California Application of Yb:YAG short pulse laser system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2005069452A2 *

Also Published As

Publication number Publication date
WO2005069452A2 (fr) 2005-07-28
WO2005069452A3 (fr) 2006-01-12

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