EP1695054A1 - Capteur multibande - Google Patents

Capteur multibande

Info

Publication number
EP1695054A1
EP1695054A1 EP03819283A EP03819283A EP1695054A1 EP 1695054 A1 EP1695054 A1 EP 1695054A1 EP 03819283 A EP03819283 A EP 03819283A EP 03819283 A EP03819283 A EP 03819283A EP 1695054 A1 EP1695054 A1 EP 1695054A1
Authority
EP
European Patent Office
Prior art keywords
detectors
sensor
group
view
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03819283A
Other languages
German (de)
English (en)
Inventor
Roland A. Wood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP1695054A1 publication Critical patent/EP1695054A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G01N21/3518—Devices using gas filter correlation techniques; Devices using gas pressure modulation techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
    • G01J3/0254—Spectrometers, other than colorimeters, making use of an integrating sphere
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
    • G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
    • G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
    • G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
    • G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
    • G01J3/513—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters having fixed filter-detector pairs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0256—Compact construction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/1793—Remote sensing
    • G01N2021/1795—Atmospheric mapping of gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers

Definitions

  • the invention pertains to sensors and in particular to sensors for detecting the presence of fluids and other substances. More particularly, the invention pertains to sensors that have detector sensitivities of at least two bandwidths.
  • Fluid is a generic term that includes liquids and gases as species. For instance, air, water, oil, gas and agents may be fluids.
  • the related art might detect at several wavelengths; however, the results of detection may not be sufficiently accurate because of sensor structure or other impediments resulting in different fields of view for detection at different wavelengths.
  • the present invention solves the potential field of view problems by utilizing several groups of detectors, wherein the detectors of each group have various a fields of view which may be reflective of their position in an array on a structure.
  • Each group may have an average, resultant or cumulative field of view that is approximately equivalent or the same as a field of view of another group of detectors. Connection and location of the individual detectors on the supporting structure may lead to equivalency or sameness of the fields of views of the numerous groups of detectors.
  • Figures la, lb and lc show upward and downward fields of view for a sensor;
  • Figure 2 shows the sensor relative to a gas cloud and the sky.
  • Figure 3 illustrates a thermoelectric detector;
  • Figures 4a and 4b reveal the sensor in conjunction with a vacuum package;
  • Figure 5 is a layout of the detectors and filters of the sensor;
  • Figure 6 is a graph showing transmission peaks of two thin-film interference filters;
  • Figure 7 is a layout of detectors and their connections into groups;
  • Figure 8 is a side view of several detectors and their corresponding filters;
  • Figure 9 is a schematic of some electronics for the sensor;
  • Figures 10a, 10b and 10c show absorptivity coefficients of an agent and two interferents;
  • Figure 11 shows the effect of variation of an angle of incidence on a narrow-band filter;
  • Figure 12 reveals a light integrating sphere;
  • Figure 13 is a table of dimensions for a sensor.
  • the present invention is a multi-band sensor for chemical agents or other substances in the atmosphere, suitable for flight on micro air vehicles (MAVs) , dispersal from aircraft, or other low-cost light-weight applications.
  • the sensor may sense the infrared (IR) emission at several selected narrow wavebands in the 3-5 or 8-12 ⁇ m IR spectral region at which gases (exhaust fumes, chemical agents, etc.) show characteristic "fingerprint" infrared absorption and emission lines.
  • the sensor may use uncooled silicon micromachined IR detectors in a silicon vacuum package.
  • the sensors and detectors may be any kind of technology. IR detectors are an illustrative example here.
  • the estimated size, weight and power of a complete sensor are 1 cc, 4 grams, 0.5mW.
  • the sensor may be a multi-band IR sensor with a field of view directed upwards (dispersed or ground-based sensor) or downwards (MAV sensor) depending on the mission purpose.
  • MAV sensor downwards
  • at least one IR band may be centered on the absorption line of a component of exhaust gas (C0 2 , H 2 0, CO, NO x , depending on the engine and fuel type) , and at least one IR band may be centered at a wavelength where these gases are transparent.
  • the presence of exhaust gases may be indicated by an imbalance in the measured radiance at the two or more wavelengths .
  • the imbalance may be produced by the different emissivity and temperature of exhaust gas components.
  • this imbalance may show a daily reversal of polarity, with crossover (minimum sensitivity) in the morning and evening.
  • the magnitude of the imbalance is difficult to predict analytically for a MAV downward looking sensor, since it may be strongly dependent on time of day, wind dispersal, etc., but may be easily measurable, since engines produce large volumes of exhaust gases (a 1000 cu inch engine produces about 100 liters per second at 1000 rpm idle) .
  • An estimate of sensitivity may be more tractable for an upward looking sensor. It may be shown with calculations that hazardous chemical agents could be detected by an upward looking IR sensor.
  • Such sensor may operate by sensing the radiance change caused by IR emission from the agent dispersed at altitudes where the air temperature is different from the apparent sky temperature.
  • GB Sarin
  • dispersed sensors 10 which may provide a protective surveillance of toxic agents for a specific area.
  • Figure 2 shows sensor 10 looking towards a warm gas cloud 11 being contrasted against a cold sky 13.
  • Sensor 10 may have a multi-band IR array 14, amplifiers 15 and processor 16. More than two IR wavebands can be employed.
  • An IR thermoelectric (TE) detector and an integrated vacuum package (IVP) may be applicable here.
  • An illustrative example of such detector may be in U.S. Patent Number 5,220,189, issued June 15, 1993, with inventors Robert Higashi et al., and entitled
  • Micromechanical Thermoelectric Sensor Element which is hereby incorporated by reference.
  • An illustrative example of such package may be in U.S. Patent Number 5,895,233, issued April 20, 1999, with inventors Robert Higashi et al . and entitled Integrated Silicon Vacuum Micropackage for Infrared Devices", which is hereby incorporated by reference.
  • the unit cell or detector of this sensor consists of a thin (8000A) silicon nitride microbridge, typically 50 to 75um square, over a pit micromachined in the underlying silicon substrate.
  • Microelectomechanical systems may be utilized in the making or fabrication of the invention. Information about MEMS may be provided in U.S. Patent Number 6,277,666, issued August 21, 2001, with inventors Kenneth Hays et al. and entitled "Precisely Defined Microelectromechanical Structures and Associated Fabrication Methods", which is hereby incorporated by reference.
  • the sensors may operate by a thermal detection mechanism, i.e., incident IR radiation may heat the microbridge.
  • Thin (1000A) thermoelectric metal films may form a thermocouple-pair and generate a direct voltage signal.
  • Sensor 10 may be ⁇ self zeroing' at any temperature, and hence may not require a temperature stabilizer or high-bit A/D.
  • Figure 3 shows a cross- section of a TE detector 17. It may have electrical contacts 18 and 19 situated on a metal 20, a cold TE junction 21 and a hot TE junction 22 of metals 20 and 23. Junction 22 is supported over an etched pit or well 24 by a silicon nitride bridge 25. All of this may be formed in and supported by a substrate 26. IR radiation 27 may impinge detector 17 which in response an electrical signal noting the impingement appears at contacts 18 and 19. TE detectors 17 or sensors should operate in a vacuum to achieve full sensitivity (as any gas pressure more than 75mTorr may dampen the thermal signals unacceptably) .
  • FIG. 4a One may use a low-cost light-weight wafer-scale vacuum encapsulation using an IR-transparent silicon "topcap" 28 on a substrate 29 as shown in Figure 4a.
  • Figure 4b illustrates the basic fabrication of wafer-to-wafer bonding of topcat wafer 28 to device wafer 29 to produce a low-cost vacuum package 30.
  • Topcap 28 may be an anti-reflective coated silicon window.
  • Item 30 is regarded as an integrated vacuum package (IVP) .
  • IVP integrated vacuum package
  • Gold pads 31 are for wire bonding the connections to detectors 17.
  • Cavity 31 may be evacuated via a port through the back of substrate or wafer 29.
  • a hermetically sealed 30x30 mosaic IVP TE sensor may have an overall die size of about 5mm x 5mm.
  • a 2D array is not required, but for adequate sensitivity it is necessary to use a mosaic of many individual TE detectors 17, electrically interconnected, to form a larger-area "mosaic" TE IR sensor 10, because the NETD improves as the square root of the mosaic area.
  • a 30x30 mosaic is 30 times more sensitive than one unit cell 17, and can provide very good performance even with narrow radiation bandwidth.
  • IVP sensors 14 have long vacuum lifetimes (over 10 years) , operate up to 180°C, and can be easily handled like conventional silicon electronic chips. These IR sensors may be produced in volume production (i.e., thousands) at very little cost each.
  • Figure 5 shows sensor 10 having multi-band capability utilizing a mosaic of IR bandpass filters.
  • the multi-band capability of IR detectors 17 may be provided by fabricating narrow-band interference filters 34 directly on the inner surface of the IVP topcap 28 using a photolithographic process to generate alternating IR transmission bandpass filters with 75um periodicity, matching the 75um periodicity of the underlying TE detectors 17.
  • a very simple dielectric stack may be employed to produce the selected IR bandpass filters.
  • Figure 6 reveals a calculated transmission of two thin- film interference filters (8 layers of Si and Si0 2 ) with transmission peaks 35 and 36 at 8um and lOum, respectively (20cm-l corresponds to about 200nm wavelength width) .
  • alternate TE detectors may be electrically interconnected in series and/or parallel, so that sensor 10 may automatically produce separate electrical signal voltages for each IR waveband, with approximately equivalent, about the same or essentially identical fields of view.
  • a detector 17 near the edge of array 14 on substrate 29 may have a different field of view than a detector 17 in the center of array 14 because the side or edge of topcap 28 may obstruct part of the view from the outside to the detector 17 near the edge, whereas such obstruction would not be present for detector 17 in the center.
  • Figure 7 shows an example of five groups of detectors 17, one group for each wavelength or "color".
  • Detectors 17 labeled “1" are of group 1
  • labeled "2" are of group 2, and so on.
  • the colors i.e., various wavelengths
  • the various "colored" detectors 17 comprising the mosaic are distributed across the mosaic area, so that each individual "color” detector 17 has a substantially-equal number of near neighbors of each of the other "colors”. All individual detectors of each separate color are electrically connected together (either in series, parallel or a combination thereof) to give a single output signal of that "color” and incorporating a field of view for the respective group.
  • the colors are distributed randomly, which achieves substantially the same equalization of the fields of view among the groups, even though a regular pattern is not used.
  • Various "colored" detectors 17 comprising the mosaic may be distributed randomly across the mosaic area, so that each individual "color” detector 17 has, on the average, a substantially- equal number of near neighbors of each of the other "colors". All individual detectors 17 of each separate color may be electrically connected together (either in series or parallel, but usually in series) to give a single output signal of that "color”.
  • the random configuration may work better when the number of detectors in array 14 is large (i.e., greater than 50).
  • the wavelength or "color” of a detector 17 may be determined by the filter 34 situated between the sensing surface or junction of detector 17 and that which is observed.
  • Figure 5 reveals a perspective of filters 34 relative to detectors 17.
  • Filters 34 designate the "colors" for detectors 17.
  • the filters 34 are laid out according to groups as described above.
  • Figure 8 is a side view of the relationship of filter 34 to detector 17. Filters 34 may be put on the inside surface of topcap 28 with photolithographic processes.
  • TE infrared thermal detectors 17 in the present sensor 10 include Low cost (because of the use of commercial silicon fabrication and vacuum package process), robustness (>12, 000-g' s, 180°C tolerant, and European Space Agency space-qualified) , suitability for long integration times (un-measurable 1/f sensor noise) , high sensitivity (NETD ⁇ 10mK with 20cm-l IR bandwidth) ,
  • Sensor 10 may utilize other kinds of detectors 17.
  • the NETD of a 2.5mm square 30x30 mosaic IVP TE sensor 10 may be calculated to be ⁇ 10mK in the operating mode of the program with 10 seconds integration time, 20cm-l waveband near lOum, 290K target temperature, and F/l optical aperture.
  • the NESR may be computed to be
  • Sensor 10 electronics may include a CMOS electronic circuit 40 as shown in Figure 9 may be used to compute the IR ratio signal of a background signal and a gas detection signal from corresponding detectors 17 to inputs 37 and 38, respectively.
  • IR detector signals pass through preamplifiers 41 and 42 and are digitized with a microprocessor 39 operating in a sig a-delta feedback loop.
  • the ratio signal may be accessed at output 43.
  • An RF link may be connected to output 43.
  • Circuit 40 uses 150uA at 3V (0.5mW) . Discrimination between chemical agents and interferents may be detected.
  • the military M21 remote sensing chemical agent alarm and joint service lightweight standoff chemical agent detector (JSLSCAD) which are remote chemical agent sensors, measure the radiance at multiple narrow wavebands within the range 800 to 1200 wavenumbers, where atmospheric transmission is normally good (except for the ozone doublet near 1030cm-l) and chemical agents have distinctive spectral characteristics.
  • Curves 44, 45 and 46 in Figures 10a, 10b and 10c show the absorptivity coefficients of chemical nerve agent GB, and two common battlefield interferents, white phosphorus (WP) smoke and Fort Benning dust (dust) near lOum wavelength, respectively.
  • WP white phosphorus
  • dust Fort Benning dust
  • the spectral resolution that has been used (with M21 and JSLSCAD) to detect and differentiate chemical agents against complex background IR signatures may be 4 wavenumbers. This however may require 100 IR measurement bands to cover the full 8-12um spectral range, which seems not conducive to a low-cost sensor. Fortunately, the skyward viewing geometry of the proposed sensor greatly simplifies the background IR signature, so that a fewer number of wider spectral bands may be used.
  • IR spectra One may take into account recent improvements in signal processing and pattern recognition techniques (autoregressive (AR) modeling, Markov Random Field (MRF) and neutral net processing.
  • AR autoregressive
  • MRF Markov Random Field
  • Sensor 10 may use one 45 degree field of view (FOV) 30x30 mosaic IVP TE IR sensor on one channel, with the other channel being used to measure air temperature with a thermistor. This may be a dual-band IVP TE sensor 10 calibrated radiometer.
  • the 30x30 mosaic TE IVP sensor 10 may be placed in a circular aluminum optical shroud on a circuit board. Two chips, amplifiers 15 (41, 42) and microprocessor 16 (39), and array 14 may be placed on circuit board 47.
  • sensor 10 may use no lens and rely on the overhead chemical agent filling the vertical field of view (FOV) . If no lens is used, then incident rays from the sky within the FOV may pass through the narrow-band IR filters at varying angles of incidence. In this case, one may consider the change in IR filter characteristics with angle of incidence.
  • Impinging radiation 27 field can also be substantially randomized by the use of an "integrating sphere" 50 as shown in Figure 12. Radiation 27 may enter a portal 51 of sphere 50. Radiation 27 is reflected around internally in sphere 50 by the reflective inside surface of sphere 50. Randomized radiation 53 may exit from sphere 50 through portal 52.
  • sensor 10 may be placed at the portal 52 exit of sphere 50 to detect the radiation.
  • Sensor 10 has high shock tolerance.
  • IR detectors 17 have been tested to 14,000g, and may tolerate more than 20,000g.
  • Electronic circuits may be hardened to 20,000g by encapsulation in supporting media.
  • Lens components might be able to tolerate 20,000g with suitable robust mounts .
  • Weight, size and power of sensor 10 may be favorable for many users. Using the known density of materials, one may estimate the weight of the expected components of chemical agent sensor 10. A single band sensor 10 is reviewed in the weight calculation table 54 in Figure 13. Additional infrared bands may be added with little additional impact in size/weight/power/cost.

Abstract

L'invention concerne un capteur comportant plusieurs groupes de détecteurs de gaz, d'agents ou de substances interférentes. Les détecteurs peuvent présenter divers angles de champ, être placés dans des emplacements particuliers d'une mosaïque, et être connectés d'une certaine manière en groupes de sorte que les groupes ainsi créés présentent sensiblement les mêmes angles de champ. Les détecteurs d'un groupe peuvent être sensibles à la même longueur d'onde de rayonnement. La mosaïque de détecteurs peut être placée dans un boîtier étanche sous vide comportant un substrat et une corne. La corne peut comprendre des filtres passe-bande disposés sur la face interne, au-dessus des filtres respectifs, pour la sélection de la longueur d'onde de rayonnement que chaque détecteur doit détecter.
EP03819283A 2003-12-20 2003-12-20 Capteur multibande Withdrawn EP1695054A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/040604 WO2005068955A1 (fr) 2003-12-20 2003-12-20 Capteur multibande

Publications (1)

Publication Number Publication Date
EP1695054A1 true EP1695054A1 (fr) 2006-08-30

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EP03819283A Withdrawn EP1695054A1 (fr) 2003-12-20 2003-12-20 Capteur multibande

Country Status (3)

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EP (1) EP1695054A1 (fr)
AU (1) AU2003297390A1 (fr)
WO (1) WO2005068955A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10091439B2 (en) 2009-06-03 2018-10-02 Flir Systems, Inc. Imager with array of multiple infrared imaging modules
US8766808B2 (en) 2010-03-09 2014-07-01 Flir Systems, Inc. Imager with multiple sensor arrays
CN212228729U (zh) 2016-12-05 2020-12-25 前视红外系统股份公司 成像系统

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Publication number Priority date Publication date Assignee Title
US5453611A (en) * 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
JPH09506712A (ja) * 1993-12-13 1997-06-30 ハネウエル・インコーポレーテッド 赤外線デバイス用集積シリコン真空マイクロパッケージ
US5811815A (en) * 1995-11-15 1998-09-22 Lockheed-Martin Ir Imaging Systems, Inc. Dual-band multi-level microbridge detector
GB2340222B (en) * 1998-07-14 2000-07-26 Infrared Integrated Syst Ltd Multi-array sensor and method of identifying events using same
JP3597069B2 (ja) * 1999-01-12 2004-12-02 日本電気株式会社 複数の赤外波長帯を検出する熱型赤外アレイセンサ
US6277666B1 (en) * 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
JP2002062189A (ja) * 2000-08-24 2002-02-28 Shimadzu Corp 分光測定用検出器及びこれを用いた積分球測定器および分光光度計

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Also Published As

Publication number Publication date
WO2005068955A1 (fr) 2005-07-28
AU2003297390A1 (en) 2005-08-03

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