EP1690286A4 - Field effect transistor with enhanced insulator structure - Google Patents

Field effect transistor with enhanced insulator structure

Info

Publication number
EP1690286A4
EP1690286A4 EP04817951A EP04817951A EP1690286A4 EP 1690286 A4 EP1690286 A4 EP 1690286A4 EP 04817951 A EP04817951 A EP 04817951A EP 04817951 A EP04817951 A EP 04817951A EP 1690286 A4 EP1690286 A4 EP 1690286A4
Authority
EP
European Patent Office
Prior art keywords
field effect
effect transistor
insulator structure
enhanced
enhanced insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04817951A
Other languages
German (de)
French (fr)
Other versions
EP1690286A2 (en
Inventor
Robert Beach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority claimed from PCT/US2004/040599 external-priority patent/WO2005057623A2/en
Publication of EP1690286A2 publication Critical patent/EP1690286A2/en
Publication of EP1690286A4 publication Critical patent/EP1690286A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
EP04817951A 2003-12-05 2004-12-06 Field effect transistor with enhanced insulator structure Withdrawn EP1690286A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52763103P 2003-12-05 2003-12-05
PCT/US2004/040599 WO2005057623A2 (en) 2003-12-05 2004-12-06 Field effect transistor with enhanced insulator structure

Publications (2)

Publication Number Publication Date
EP1690286A2 EP1690286A2 (en) 2006-08-16
EP1690286A4 true EP1690286A4 (en) 2009-07-08

Family

ID=36649355

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04817951A Withdrawn EP1690286A4 (en) 2003-12-05 2004-12-06 Field effect transistor with enhanced insulator structure

Country Status (1)

Country Link
EP (1) EP1690286A4 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429467B1 (en) * 1999-01-29 2002-08-06 Nec Corporation Heterojunction field effect transistor
US20020139995A1 (en) * 2001-03-27 2002-10-03 Kaoru Inoue Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429467B1 (en) * 1999-01-29 2002-08-06 Nec Corporation Heterojunction field effect transistor
US20020139995A1 (en) * 2001-03-27 2002-10-03 Kaoru Inoue Semiconductor device

Also Published As

Publication number Publication date
EP1690286A2 (en) 2006-08-16

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Effective date: 20060606

AK Designated contracting states

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR LV MK YU

DAX Request for extension of the european patent (deleted)
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RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/336 20060101ALI20080116BHEP

Ipc: H01L 31/109 20060101ALI20080116BHEP

Ipc: H01L 31/072 20060101ALI20080116BHEP

Ipc: H01L 31/0336 20060101ALI20080116BHEP

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Ipc: H01L 21/4763 20060101ALI20080116BHEP

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A4 Supplementary search report drawn up and despatched

Effective date: 20090609

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/778 20060101ALI20090603BHEP

Ipc: H01L 29/20 20060101ALI20090603BHEP

Ipc: H01L 21/336 20060101ALI20090603BHEP

Ipc: H01L 31/109 20060101ALI20090603BHEP

Ipc: H01L 31/072 20060101ALI20090603BHEP

Ipc: H01L 31/0336 20060101ALI20090603BHEP

Ipc: H01L 31/0328 20060101ALI20090603BHEP

Ipc: H01L 29/739 20060101ALI20090603BHEP

Ipc: H01L 21/4763 20060101ALI20090603BHEP

Ipc: H01L 21/3205 20060101AFI20080116BHEP

17Q First examination report despatched

Effective date: 20090812

STAA Information on the status of an ep patent application or granted ep patent

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18W Application withdrawn

Effective date: 20101203