EP1563567A1 - Packaged electronic component for applications at millimetric frequencies - Google Patents

Packaged electronic component for applications at millimetric frequencies

Info

Publication number
EP1563567A1
EP1563567A1 EP03799522A EP03799522A EP1563567A1 EP 1563567 A1 EP1563567 A1 EP 1563567A1 EP 03799522 A EP03799522 A EP 03799522A EP 03799522 A EP03799522 A EP 03799522A EP 1563567 A1 EP1563567 A1 EP 1563567A1
Authority
EP
European Patent Office
Prior art keywords
frequency
access
component according
ghz
chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03799522A
Other languages
German (de)
French (fr)
Inventor
Marc Thales Intellectual Property CAMIADE
Denis Thales Intellectual Property DOMNESQUE
Klaus Thales Intellectual Property BEILENHOFF
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Monolithic Semiconductors SAS
Original Assignee
United Monolithic Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Monolithic Semiconductors SAS filed Critical United Monolithic Semiconductors SAS
Publication of EP1563567A1 publication Critical patent/EP1563567A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Definitions

  • the invention relates to electronic circuits working at very high frequencies, greater than 45 GHz, also called “millimeter frequencies”.
  • These electronic circuits are used for radar type applications in which an electromagnetic wave is emitted at a millimeter frequency and a wave reflected by an obstacle is received on an antenna, in order to extract distance information from this wave, on the one hand, and of relative speed, on the other hand, between this obstacle and the source which emitted the wave.
  • Millimeter frequency circuits can also be used for short distance and very high speed communications applications.
  • electronic processing of millimeter frequency signals includes a low frequency processing part which can be implemented by integrated silicon circuits mounted on printed circuits. This part can be achieved by very widely used technologies and at low cost, with simple connections to be made between circuit elements on the same integrated circuit chip or between different integrated circuit chips.
  • the treatment also includes a very high frequency part (greater than 45 GHz), which can only be implemented by components and integrated circuits made of semiconductor materials other than silicon (gallium arsenide GaAs and its derivatives in particular, or else SiGe). These integrated circuits are called MMIC for "microwave monolithic integrated circuits". This high frequency part poses difficult production problems and is generally very expensive.
  • the mounting of the chips on a hybrid substrate is itself very expensive when the chips are numerous.
  • the present invention aims to reduce the cost of electronic systems operating at millimeter frequencies above 45 GHz (and preferably above 60 GHz) and comprising MMIC chips.
  • the invention proposes to use, to make the system, a new type of component.
  • This electronic component is a component mounted in an individual housing and intended to be connected to other components of an electronic system, for example on a printed circuit board grouping together several components; the component comprises at least one integrated circuit MMIC chip working around a main millimeter frequency F greater than 45 GHz.
  • the box has at least two accesses for the communication of electrical signals between the inside and the outside of the box, the first access being a transition access by electromagnetic coupling (transition without material electrical contact) allowing the transmission of the working frequency.
  • the subharmonic frequency is preferably one of the following four frequencies: F / 6 or F / 4 or F / 3 (in borderline cases it could be F / 2).
  • the subharmonic frequency is therefore 1/6 or 1/4 or 1/3 of 77GHz.
  • the housing is preferably provided with a conductive cover placed at a distance from the first access such that it establishes, near this access, an electromagnetic short circuit at the main working frequency, this short circuit forming a reflector d 'wavy favoring the contactless transmission of this frequency by the first access.
  • the height of the conductive cover above the first access is preferably equal to a quarter of the wavelength of the main working frequency, to perform this role of short circuit and reflector. This height can also be an odd multiple of a quarter of the wavelength.
  • the MMIC chip (s) present in the housing will preferably include multiplication means in an N ratio to pass from the subharmonic frequency to the main working frequency. It could also in certain cases include frequency division means in the N report.
  • the component therefore has the particularity that it includes access without hardware contact, dedicated to the passage of signals at the main frequency and access with contact dedicated to passage of signals at the subharmonic frequency.
  • FIG. 1 shows a component in a millimeter package according to the invention
  • FIG. 2 shows a component according to the invention associated with a radar antenna.
  • a typical example of application in which the component according to the invention can be used is a radar application, in which, on the one hand, it is desired to transmit by a first antenna a millimeter frequency greater than 45 GHz, in this example a frequency of 77 GHz, and on the other hand receive, by several different antennas, the electromagnetic wave reflected by an obstacle. It is therefore a multibeam radar.
  • the presence of several receiving antennas allows to observe the presence of obstacles in a wider angular field and on the other hand allows to locate more precisely the detected obstacle.
  • millimeter boxes capable of working at frequencies above 45 GHz, and having external accesses to allow a link by electromagnetic coupling without contact at the frequency.
  • This box includes in particular a conductive cover (metallic or metallized cover) which encloses the lines of propagation of the signals coming from the chip or going towards the chip.
  • the conductive hood is located above the non-contact exterior access, at a distance such that it constitutes (at the main working frequency for which the component is designed) an electromagnetic short-circuit favoring the signal transmission in free propagation by this access.
  • the accesses to the working frequency F of more than 45 GHz are transitions by electromagnetic coupling in the air (or in a gas or in the vacuum), and in particular of the conducting elements capable of radiating towards a waveguide placed in view of these elements, or capable of receiving electromagnetic radiation at the output of a waveguide in front of which they are placed.
  • the case in which the MMIC chips are enclosed has a non-conductive part opposite these conductive elements so as to allow the electromagnetic energy to pass between the guide and the conductive elements.
  • the housing preferably has, in addition to one or more non-contact external accesses capable of efficient coupling at more than 45 GHz, accesses that are not capable of working efficiently at a frequency greater than 45 GHz but designed to work at a frequency sub-harmonic of the working frequency. And the chips contained in these components then preferably comprise the means of multiplication of frequency necessary to pass from the subharmonic frequency to the main frequency.
  • FIG. 1 shows in section a component according to the invention.
  • the housing is conductive, for example metallic or partially metallic; it preferably comprises a metal base 20, serving as a substrate on which the rear face of the MMIC chip 22 is directly transferred, a double-sided ceramic substrate 24 serving for interconnections inside the case and towards the outside of the case, and a metallic or metallized cover 25 covering the base to enclose, between the base and the cover, the chip or chips and the ceramic substrate. Since the MMIC chip 22 is soldered directly to the base, the ceramic substrate 24 has an opening into which the chip is inserted.
  • the ceramic substrate 24 is preferably a metallized substrate on its two faces: metallization 26 on the front face to form transmission lines, and metallization 28 on the rear face to form a ground plane.
  • the dimensions of the various dielectric and conductive parts are such that the component operates correctly at the working frequency considered (77 GHz).
  • the metallizations 26 and 28 are used on the one hand to establish interconnections between chips and on the other hand to establish the external accesses of the box, as well the accesses able to work at 77 GHz as the accesses intended to transmit a subharmonic frequency of 77 GHz.
  • the access 30 capable of transmitting the frequency of 77 GHz comprises a transition by contactless electromagnetic coupling making it possible to pass the signal at the frequency of 77 GHz without contact from a waveguide to the chip or vice versa.
  • This transition by electromagnetic coupling is preferably made via an opening 32 in the housing, and more precisely in the metal base 20.
  • This opening 32 communicates with a waveguide not shown in FIG. 1.
  • This opening is closed physically, but not electromagnetically, by the ceramic substrate 24. It comes opposite a demetallized zone 34 formed in the metallization 28 of the rear face of the ceramic substrate.
  • the end 36 of the microstrip line On the front face metallization 26, constituting a microstrip line going from the MMIC chip 22 towards the access 30, provision has been made for the end 36 of the microstrip line to end exactly opposite the center of the opening 32 of the base 20.
  • This end 36 associated with the demetallized zone 34 which is surrounded by the metallization 28 forming a ground plane, forms a radiating element therefore an antenna communicating for example with a waveguide placed in front of the opening 32, directly coupling electromagnetically the waveguide with the microstrip line.
  • the conductive surface of the cover is located at a distance in relation to the wavelength of the main working frequency of the signals transmitted by this line, this distance being such that the cover constitutes an electromagnetic short-circuit and therefore a reflector for the antenna radiated by the end 36 of the microstrip line.
  • the height H of the cover above the metallization of the ceramic substrate 24 is equal to a quarter of the wavelength corresponding to this frequency or very close to this value. It can also be an odd multiple of a quarter of the wavelength.
  • wired wiring 38 is established between the chip and the line.
  • the coupling thus established operates at 77 GHz provided that the dimensions of the metallized and non-metallized zones, the thickness of the ceramic substrate and the width of the opening in the ceramic substrate, are correctly chosen, in relation to the corresponding wavelength at the main frequency of 77 GHz.
  • the waveguide is connected to an antenna for receiving (or transmitting) the reflected radar wave, and the end 36 of the microstrip line plays the role of receiving element d 'an electromagnetic wave entering the housing.
  • the other access shown in FIG. 1 is a direct access 40 per microstrip line, not allowing communication at 77 GHz but allowing communication at a frequency under harmonic which is preferably F / 6 but which can also be F / 4 or F / 3, or even F / 2 in some cases.
  • the microstrip line corresponding to this access is formed in the upper metallization 26 of the substrate 24 of metallized ceramic.
  • the lower metallization 28 acts as a ground plane.
  • the passage of the line from the inside to the outside of the housing is done through a local interruption of the conductive cover 25, by isolating the microstrip line from the cover, for example by means of an insulating washer 42 interposed between the line and the edge of the cover, or by a notch in the cover.
  • the MMIC chip On the side of this sub-harmonic frequency access 40, the MMIC chip is also connected to the microstrip line by wired wiring 44.
  • connection of the component to the outside can be made by the access 40 with another similar component mounted on the same hybrid substrate, or with a different component mounted on the same hybrid substrate or mounted on a conventional printed circuit.
  • This connection can be made directly from the upper metallization surface 26 which leaves the housing; for example a wire can be soldered on this upper surface; or it can be done by means of a connection pin 46 welded to this external part of the metallization 26 and then forming an integral part of the component.
  • Figure 2 shows the use of the Figure 1 component in an electronic radar system.
  • a metal plate 50 which is a wave guide plate: in this plate is fitted out a waveguide 52, the outlet end of which comes just opposite the opening 32 of the base 20, therefore opposite the conductive end 36 which allows electromagnetic coupling between the waveguide and the housing.
  • the waveguide plate 50 can comprise several waveguides, for example a second guide 54 leading to a second antenna 64 machined in the same antenna plate 60; this guide directs the electromagnetic wave received from the second antenna to a second component in a millimeter package, not shown, similar to the component in FIG. 1 and mounted like it on the plate 50 forming a substrate common to several components according to the invention.
  • the ceramic substrate 24 was fixed on a metal base.
  • the housing being constituted by the metallized ceramic substrate (on its two faces) and the metal cover.
  • the access 30 with transition by electromagnetic coupling is carried out in exactly the same way; the demetallized zone 34 formed in the rear metallization 28 takes the place of the opening 32 which does not exist since the base does not exist.
  • the waveguide arrives exactly opposite this demetallization.
  • the microstrip line is carried by an MMIC chip (the same or another than chip 22) instead of being carried by a substrate ceramic as is the case in FIGS. 1 and 2.
  • the MMIC chip which thus serves as an electromagnetic transition is fixed to a metal base of the housing, a part of the chip projecting opposite an opening formed in the base, an opening which itself faces a waveguide.
  • the free end of the microstrip line carried by the MMIC chip then comes opposite the opening in the base to constitute an electromagnetic transition without contact through this opening.
  • an electromagnetic coupling transition which uses the housing cover as a reflector to effect the transition.
  • transitions without reflector
  • a reflector is then not necessarily necessary and this embodiment would be particularly suitable for cases where the cover of the housing is made of plastic.
  • components according to the invention can realize complete electronic systems on inexpensive printed circuit substrates (resin-based substrates) grouping low-frequency components (integrated circuit chips or other components operating at low frequency), and components operating up to about 25 GHz.
  • These components are connected to components in a millimeter package according to the invention by microstrip connections, and the components in a millimeter package are connected to antennas by non-contact electromagnetic coupling transitions and by waveguides.

Landscapes

  • Transceivers (AREA)
  • Waveguide Aerials (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Waveguide Connection Structure (AREA)

Abstract

The invention concerns electronic components in millimetric package for applications at high frequencies higher than 45 GHz. The invention is characterized in that in order to facilitate the design of a system comprising MMIC chips operating at said frequencies, it consists in using packages containing one or more chips (22), said packages enabling operation at said frequencies and comprising two types of access: one non-contact electromagnetic coupling transition access (30) enabling connection to an antenna with high operating frequency F via a waveguide; and a microstrip or coaxial line access enabling connection to a sub-harmonic frequency F/N (preferably N = 6 or 4 or at most 3) of the operating frequency. The invention is applicable to radar systems.

Description

COMPOSANT ELECTRONIQUE EN BOÎTIER POUR APPLICATIONS A DES FREQUENCES MILLIMETRIQUES ELECTRONIC COMPONENT IN A HOUSING FOR APPLICATIONS TO MILLIMETER FREQUENCIES
L'invention concerne les circuits électroniques travaillant à des fréquences très élevées, supérieures à 45 GHz, dites également "fréquences millimétriques".The invention relates to electronic circuits working at very high frequencies, greater than 45 GHz, also called "millimeter frequencies".
Ces circuits électroniques sont utilisés pour des applications de type radar dans lesquels on émet une onde électromagnétique à une fréquence millimétrique et on reçoit sur une antenne une onde réfléchie par un obstacle, pour extraire de cette onde des informations de distance, d'une part, et de vitesse relative, d'autre part, entre cet obstacle et la source qui a émis l'onde.These electronic circuits are used for radar type applications in which an electromagnetic wave is emitted at a millimeter frequency and a wave reflected by an obstacle is received on an antenna, in order to extract distance information from this wave, on the one hand, and of relative speed, on the other hand, between this obstacle and the source which emitted the wave.
Les circuits à fréquence millimétrique peuvent également être utilisés pour des applications de communications à courte distance et très haut débit. Quelle que soit l'application, le traitement électronique des signaux à fréquence millimétrique comprend une partie de traitement à basse fréquence pouvant être mise en œuvre par des circuits intégrés en silicium montés sur des circuits imprimés. Cette partie peut être réalisée par des technologies très largement répandues et à faible coût, avec des connexions simples à réaliser entre éléments de circuits sur une même puce de circuit intégré ou entre différentes puces de circuit-intégré. Le traitement comprend aussi une partie à très haute fréquence (supérieure à 45 GHz), ne pouvant être mise en oeuvre que par des composants et des circuits intégrés en matériaux semiconducteurs autres que du silicium (arséniure de gallium GaAs et ses dérivés notamment, ou encore SiGe). Ces circuits intégrés sont appelés MMIC pour "microwave monolithic integrated circuits". Cette partie haute fréquence pose des problèmes de réalisation difficiles et s'avère en général très coûteuse.Millimeter frequency circuits can also be used for short distance and very high speed communications applications. Whatever the application, electronic processing of millimeter frequency signals includes a low frequency processing part which can be implemented by integrated silicon circuits mounted on printed circuits. This part can be achieved by very widely used technologies and at low cost, with simple connections to be made between circuit elements on the same integrated circuit chip or between different integrated circuit chips. The treatment also includes a very high frequency part (greater than 45 GHz), which can only be implemented by components and integrated circuits made of semiconductor materials other than silicon (gallium arsenide GaAs and its derivatives in particular, or else SiGe). These integrated circuits are called MMIC for "microwave monolithic integrated circuits". This high frequency part poses difficult production problems and is generally very expensive.
En effet, pour des fonctions relativement complexes, on est obligé d'utiliser un nombre important de puces de circuit intégré MMIC, la quantité d'éléments de circuit qu'on peut mettre dans une même puce étant beaucoup plus limitée pour les circuits MMIC que pour les circuits basse-fréquence au silicium. D'autre part, ces puces sont montées sur un substrat comportant des interconnexions difficiles à réaliser compte-tenu des fréquences très élevées auxquelles on travaille. La conception des interconnexions est difficile, et le coût de réalisation est élevé en raison de la très grande précision de dimensionnement qui est indispensable pour assurer la transmission des signaux à fréquence millimétrique. Ceci est d'autant plus vrai qu'il y a plus de puces MMIC dans le système. Or, l'augmentation de la complexité des fonctions qu'on souhaite réaliser entraîne une augmentation du nombre de puces.Indeed, for relatively complex functions, we are forced to use a large number of integrated circuit MMIC chips, the quantity of circuit elements that we can put in the same chip being much more limited for MMIC circuits than for low-frequency silicon circuits. On the other hand, these chips are mounted on a substrate comprising interconnections which are difficult to produce given the very low frequencies. we are working on. The design of interconnections is difficult, and the production cost is high due to the very high dimensioning precision which is essential for ensuring the transmission of signals at millimeter frequency. This is all the more true as there are more MMIC chips in the system. However, the increase in the complexity of the functions that one wishes to carry out leads to an increase in the number of chips.
Le montage des puces sur un substrat hybride (montage en général avec câblage filaire pour relier les puces au substrat hybride) est lui- même très coûteux lorsque les puces sont nombreuses.The mounting of the chips on a hybrid substrate (mounting in general with wire wiring to connect the chips to the hybrid substrate) is itself very expensive when the chips are numerous.
La présente invention a pour but la réduction du coût des systèmes électroniques fonctionnant à des fréquences millimétriques supérieures à 45 GHz (et de préférence supérieures à 60 GHz) et comportant des puces MMIC. Pour permettre cette réduction de coût, l'invention propose d'utiliser, pour réaliser le système, un type de composant nouveau. Ce composant électronique est un composant monté en boîtier individuel et destiné à être connecté à d'autres composants d'un système électronique, par exemple sur une carte de circuit imprimé regroupant plusieurs composants ; le composant comprend au moins une puce de circuit-intégré MMIC travaillant autour d'une fréquence principale millimétrique F supérieure à 45 GHz. Le boîtier comporte au moins deux accès pour la communication de signaux électriques entre l'intérieur et l'extérieur du boîtier, le premier accès étant un accès à transition par couplage électromagnétique (transition sans contact électrique matériel) permettant la transmission de la fréquence de travail principale supérieure à 45 GHz, et le deuxième accès étant un accès à transition de type micro-strip (appelé aussi micro-ruban) ou coaxiale permettant la transmission d'une fréquence de travail F/N sous-harmonique de la fréquence principale F. La fréquence sous-harmonique est de préférence l'une des quatre fréquences suivantes : F/6 ou F/4 ou F/3 (dans des cas limites elle pourrait être de F/2).The present invention aims to reduce the cost of electronic systems operating at millimeter frequencies above 45 GHz (and preferably above 60 GHz) and comprising MMIC chips. To allow this cost reduction, the invention proposes to use, to make the system, a new type of component. This electronic component is a component mounted in an individual housing and intended to be connected to other components of an electronic system, for example on a printed circuit board grouping together several components; the component comprises at least one integrated circuit MMIC chip working around a main millimeter frequency F greater than 45 GHz. The box has at least two accesses for the communication of electrical signals between the inside and the outside of the box, the first access being a transition access by electromagnetic coupling (transition without material electrical contact) allowing the transmission of the working frequency. main access higher than 45 GHz, and the second access being a transition access of micro-strip type (also called micro-ribbon) or coaxial allowing the transmission of a working frequency F / N subharmonic of the main frequency F. The subharmonic frequency is preferably one of the following four frequencies: F / 6 or F / 4 or F / 3 (in borderline cases it could be F / 2).
Dans le cas d'une fréquence de travail à 77 GHz, la fréquence sous-harmonique est donc de 1/6 ou 1/4 ou 1/3 de 77GHz. Le boîtier est de préférence pourvu d'un capot conducteur placé à une distance du premier accès telle qu'il établisse, à proximité de cet accès, un court-circuit électromagnétique à la fréquence de travail principale, ce court-circuit formant un réflecteur d'ondé favorisant la transmission sans contact de cette fréquence par le premier accès.In the case of a working frequency at 77 GHz, the subharmonic frequency is therefore 1/6 or 1/4 or 1/3 of 77GHz. The housing is preferably provided with a conductive cover placed at a distance from the first access such that it establishes, near this access, an electromagnetic short circuit at the main working frequency, this short circuit forming a reflector d 'wavy favoring the contactless transmission of this frequency by the first access.
La hauteur du capot conducteur au dessus du premier accès est de préférence égale au quart de la longueur d'onde de la fréquence de travail principale, pour réaliser ce rôle de court-circuit et de réflecteur. Cette hauteur peut aussi être un multiple impair du quart de la longueur d'onde. La ou les puces MMIC présentes dans le boîtier comporteront de préférence des moyens de multiplication dans un rapport N pour passer de la fréquence sous-harmonique à la fréquence de travail principale. Elle pourrait aussi dans certains cas comporter des moyens de division de fréquence dans le rapport N. Le composant a donc pour particularité qu'il comporte un accès sans contact matériel, dédié au passage de signaux à la fréquence principale et un accès avec contact dédié au passage de signaux à la fréquence sous- harmonique.The height of the conductive cover above the first access is preferably equal to a quarter of the wavelength of the main working frequency, to perform this role of short circuit and reflector. This height can also be an odd multiple of a quarter of the wavelength. The MMIC chip (s) present in the housing will preferably include multiplication means in an N ratio to pass from the subharmonic frequency to the main working frequency. It could also in certain cases include frequency division means in the N report. The component therefore has the particularity that it includes access without hardware contact, dedicated to the passage of signals at the main frequency and access with contact dedicated to passage of signals at the subharmonic frequency.
D'autres caractéristiques et avantages de l'invention apparaîtront à la lecture de la description détaillée qui suit et qui est faite en référence aux dessins annexés dans lesquels :Other characteristics and advantages of the invention will appear on reading the detailed description which follows and which is given with reference to the appended drawings in which:
- la figure 1 représente un composant en boîtier millimétrique selon l'invention ; - la figure 2 représente un composant selon l'invention associé à une antenne radar.- Figure 1 shows a component in a millimeter package according to the invention; - Figure 2 shows a component according to the invention associated with a radar antenna.
Un exemple typique d'application dans laquelle on peut utiliser le composant selon l'invention est une application de radar, dans laquelle on veut d'une part émettre par une première antenne une fréquence millimétrique supérieure à 45 GHz, dans cet exemple une fréquence de 77 GHz, et d'autre part recevoir, par plusieurs antennes différentes, l'onde électromagnétique réfléchie par un obstacle. Il s'agit donc d'un radar multifaisceau. La présence de plusieurs antennes de réception permet d'observer la présence d'obstacles dans un champ angulaire plus large et permet d'autre part de localiser avec plus de précision l'obstacle détecté.A typical example of application in which the component according to the invention can be used is a radar application, in which, on the one hand, it is desired to transmit by a first antenna a millimeter frequency greater than 45 GHz, in this example a frequency of 77 GHz, and on the other hand receive, by several different antennas, the electromagnetic wave reflected by an obstacle. It is therefore a multibeam radar. The presence of several receiving antennas allows to observe the presence of obstacles in a wider angular field and on the other hand allows to locate more precisely the detected obstacle.
Selon l'invention, on propose de placer les puces MMIC individuellement dans des boîtiers fermés, dits boîtiers millimétriques, capables de travailler à des fréquences supérieures à 45 GHz, et possédant des accès extérieurs pour permettre une liaison par couplage électromagnétique sans contact à la fréquence de travail, ici 77 GHz, avec des antennes d'émission ou de réception ou avec des guides d'onde menant à ces antennes La transmission par couplage électromagnétique à ces très hautes fréquences est assurée en utilisant les propriétés de propagation libre des signaux électromagnétiques à l'intérieur du boîtier et surtout entre l'intérieur et l'extérieur. Ce boîtier comprend notamment un capot conducteur (capot métallique ou métallisé) qui enferme les lignes de propagation des signaux issus de la puce ou allant vers la puce. Le capot conducteur est situé au dessus de l'accès extérieur sans contact, à une distance telle qu'il constitue (à la fréquence principale de travail pour laquelle le composant est conçu) un court-circuit électromagnétique favorisant la transmission de signal en propagation libre par cet accès. Les accès à la fréquence de travail F de plus de 45 GHz sont des transitions par couplage électromagnétique dans l'air (ou dans un gaz ou dans le vide), et notamment des éléments conducteurs capables de rayonner vers un guide d'onde placé en regard de ces éléments, ou capables de recevoir un rayonnement électromagnétique en sortie d'un guide d'onde devant lequel ils sont placés. Le boîtier dans lequel sont enfermées les puces MMIC comporte une partie non conductrice en regard de ces éléments conducteurs de manière à laisser passer l'énergie électromagnétique entre le guide et les éléments conducteurs.According to the invention, it is proposed to place the MMIC chips individually in closed boxes, called millimeter boxes, capable of working at frequencies above 45 GHz, and having external accesses to allow a link by electromagnetic coupling without contact at the frequency. working here 77 GHz with transmitting or receiving antennas or with waveguides leading to these antennas Transmission by electromagnetic coupling at these very high frequencies is ensured by using the properties of free propagation of electromagnetic signals at inside the case and especially between inside and outside. This box includes in particular a conductive cover (metallic or metallized cover) which encloses the lines of propagation of the signals coming from the chip or going towards the chip. The conductive hood is located above the non-contact exterior access, at a distance such that it constitutes (at the main working frequency for which the component is designed) an electromagnetic short-circuit favoring the signal transmission in free propagation by this access. The accesses to the working frequency F of more than 45 GHz are transitions by electromagnetic coupling in the air (or in a gas or in the vacuum), and in particular of the conducting elements capable of radiating towards a waveguide placed in view of these elements, or capable of receiving electromagnetic radiation at the output of a waveguide in front of which they are placed. The case in which the MMIC chips are enclosed has a non-conductive part opposite these conductive elements so as to allow the electromagnetic energy to pass between the guide and the conductive elements.
Le boîtier possède de préférence, en plus d'un ou plusieurs accès extérieurs sans contact capables d'un couplage efficace à plus de 45 GHz, des accès non capables de travailler efficacement à une fréquence supérieure à 45 GHz mais conçus pour travailler à une fréquence sous- harmonique de la fréquence de travail. Et les puces contenues dans ces composants comportent alors de préférence les moyens de multiplication de fréquence nécessaires pour passer de la fréquence sous-harmonique à la fréquence principale.The housing preferably has, in addition to one or more non-contact external accesses capable of efficient coupling at more than 45 GHz, accesses that are not capable of working efficiently at a frequency greater than 45 GHz but designed to work at a frequency sub-harmonic of the working frequency. And the chips contained in these components then preferably comprise the means of multiplication of frequency necessary to pass from the subharmonic frequency to the main frequency.
Les accès incapables de travailler à 77 GHz mais capables de travailler au-dessus de 10 GHz, voire jusqu'à 25 GHz ou un peu plus, sont réalisés au moyen de lignes micro-ruban (aussi appelées microstrip) ou des lignes coaxiales. La connexion du composant avec d'autres composants placés sur un même substrat se fera facilement du fait que les fréquences transportées sont beaucoup plus faibles que la fréquence millimétrique de travail. La figure 1 représente en coupe un composant selon l'invention.Accesses unable to work at 77 GHz but capable of working above 10 GHz, or even up to 25 GHz or a little more, are made by means of microstrip lines (also called microstrip) or coaxial lines. The connection of the component with other components placed on the same substrate will be done easily because the transported frequencies are much lower than the millimeter working frequency. Figure 1 shows in section a component according to the invention.
Dans cet exemple, on ne voit qu'une puce MMIC dans le boîtier du composant mais il peut y en avoir deux ou même exceptionnellement trois.In this example, we see only one MMIC chip in the component case but there can be two or even exceptionally three.
Le boîtier est conducteur, par exemple métallique ou partiellement métallique ; il comporte de préférence une embase métallique 20, servant de substrat sur lequel est directement reportée la face arrière de la puce MMIC 22, un substrat céramique double face 24 servant aux interconnexions à l'intérieur du boîtier et vers l'extérieur du boîtier, et un capot métallique ou métallisé 25 recouvrant l'embase pour enfermer, entre l'embase et le capot, la ou les puces et le substrat de céramique. La puce MMIC 22 étant soudée directement sur l'embase, le substrat céramique 24 comporte une ouverture dans laquelle vient s'insérer la puce. Le substrat céramique 24 est de préférence un substrat métallisé sur ses deux faces : métallisation 26 sur la face avant pour constituer des lignes de transmsission, et métallisation 28 sur la face arrière pour constituer un plan de masse. Les dimensions des différentes parties diélectriques et conductrices sont telles que le composant fonctionne correctement à la fréquence de travail considérée (77 GHz). Les métallisations 26 et 28 servent d'une part à établir des interconnexions entre puces et d'autre part à établir les accès extérieurs du boîtier, aussi bien les accès capables de travailler à 77 GHz que les accès destinés à transmettre une fréquence sous-harmonique de 77 GHz.The housing is conductive, for example metallic or partially metallic; it preferably comprises a metal base 20, serving as a substrate on which the rear face of the MMIC chip 22 is directly transferred, a double-sided ceramic substrate 24 serving for interconnections inside the case and towards the outside of the case, and a metallic or metallized cover 25 covering the base to enclose, between the base and the cover, the chip or chips and the ceramic substrate. Since the MMIC chip 22 is soldered directly to the base, the ceramic substrate 24 has an opening into which the chip is inserted. The ceramic substrate 24 is preferably a metallized substrate on its two faces: metallization 26 on the front face to form transmission lines, and metallization 28 on the rear face to form a ground plane. The dimensions of the various dielectric and conductive parts are such that the component operates correctly at the working frequency considered (77 GHz). The metallizations 26 and 28 are used on the one hand to establish interconnections between chips and on the other hand to establish the external accesses of the box, as well the accesses able to work at 77 GHz as the accesses intended to transmit a subharmonic frequency of 77 GHz.
Sur l'exemple de la figure 1 , l'accès 30 capable de transmettre la fréquence de 77 GHz comprend une transition par couplage électromagnétique sans contact permettant de faire passer le signal à la fréquence de 77GHz sans contact d'un guide d'ondes vers la puce ou réciproquement. Cette transition par couplage électromagnétique se fait de préférence par l'intermédiaire d'une ouverture 32 dans le boîtier, et plus précisément dans l'embase métallique 20. Cette ouverture 32 communique avec un guide d'onde non représenté sur la figure 1. Cette ouverture est fermée physiquement, mais pas électromagnétiquement, par le substrat céramique 24. Elle vient en regard d'une zone démétallisée 34 ménagée dans la métallisation 28 de face arrière du substrat de céramique. Sur la métallisation 26 de face avant, constituant une ligne microstrip allant de la puce MMIC 22 vers l'accès 30, on a prévu que l'extrémité 36 de la ligne microstrip aboutisse exactement en regard du centre de l'ouverture 32 de l'embase 20. Cette extrémité 36, associée à la zone démétallisée 34 qui est entourée par la métallisation 28 formant plan de masse, forme un élément rayonnant donc une antenne communiquant par exemple avec un guide d'onde placé devant l'ouverture 32, couplant directement par voie électromagnétique le guide d'onde avec la ligne microstrip. Au dessus de l'extrémité 36 de la ligne microstrip, la surface conductrice du capot est située à une distance en rapport avec la longueur d'onde de la fréquence de travail principale des sigaux transmis par cette ligne, cette distance étant telle que le capot constitue un court-circuit électromagnétique et donc un réflecteur pour l'antenne rayonnée par l'extrémité 36 de la ligne microstrip. Par exemple la hauteur H du capot au dessus de la métallisation du substrat de céramique 24, est égale au quart de la longueur d'onde correspondant à cette fréquence ou très proche de cette valeur. Elle peut aussi être un multiple impair du quart de la longueur d'onde. A l'autre extrémité de la ligne microstrip, un câblage filaire 38 est établi entre la puce et la ligne. Le couplage ainsi établi fonctionne à 77 GHz pourvu que les dimensions des zones métallisées et non métallisées, l'épaisseur du substrat céramique et la largeur de l'ouverture dans le substrat céramique, soient correctement choisies, en rapport avec la longueur d'onde correspondant à la fréquence principale de 77 GHz.In the example of FIG. 1, the access 30 capable of transmitting the frequency of 77 GHz comprises a transition by contactless electromagnetic coupling making it possible to pass the signal at the frequency of 77 GHz without contact from a waveguide to the chip or vice versa. This transition by electromagnetic coupling is preferably made via an opening 32 in the housing, and more precisely in the metal base 20. This opening 32 communicates with a waveguide not shown in FIG. 1. This opening is closed physically, but not electromagnetically, by the ceramic substrate 24. It comes opposite a demetallized zone 34 formed in the metallization 28 of the rear face of the ceramic substrate. On the front face metallization 26, constituting a microstrip line going from the MMIC chip 22 towards the access 30, provision has been made for the end 36 of the microstrip line to end exactly opposite the center of the opening 32 of the base 20. This end 36, associated with the demetallized zone 34 which is surrounded by the metallization 28 forming a ground plane, forms a radiating element therefore an antenna communicating for example with a waveguide placed in front of the opening 32, directly coupling electromagnetically the waveguide with the microstrip line. Above the end 36 of the microstrip line, the conductive surface of the cover is located at a distance in relation to the wavelength of the main working frequency of the signals transmitted by this line, this distance being such that the cover constitutes an electromagnetic short-circuit and therefore a reflector for the antenna radiated by the end 36 of the microstrip line. For example, the height H of the cover above the metallization of the ceramic substrate 24, is equal to a quarter of the wavelength corresponding to this frequency or very close to this value. It can also be an odd multiple of a quarter of the wavelength. At the other end of the microstrip line, wired wiring 38 is established between the chip and the line. The coupling thus established operates at 77 GHz provided that the dimensions of the metallized and non-metallized zones, the thickness of the ceramic substrate and the width of the opening in the ceramic substrate, are correctly chosen, in relation to the corresponding wavelength at the main frequency of 77 GHz.
Dans l'application principale envisagée, le guide d'onde est connecté à une antenne de réception (ou d'émission) de l'onde radar réfléchie, et l'extrémité 36 de la ligne microstrip joue le rôle d'élément de réception d'une onde électromagnétique entrante dans le boîtier. L'autre accès représenté sur la figure 1, est un accès direct 40 par ligne microstrip, ne permettant pas une communication à 77 GHz mais permettant une communication à une fréquence sous harmonique qui est de préférence F/6 mais qui peut être également F/4 ou F/3, voire même F/2 dans certains cas. La ligne microstrip correspondant à cet accès est constituée dans la métallisation supérieure 26 du substrat 24 de céramique métallisée. La métallisation inférieure 28 joue le rôle de plan de masse. Le passage de la ligne de l'intérieur jusqu'à l'extérieur du boîtier se fait à travers une interruption locale du capot conducteur 25, en isolant la ligne microstrip du capot, par exemple grâce à une rondelle isolante 42 interposée entre la ligne et le bord du capot, ou par une encoche dans le capot.In the main application envisaged, the waveguide is connected to an antenna for receiving (or transmitting) the reflected radar wave, and the end 36 of the microstrip line plays the role of receiving element d 'an electromagnetic wave entering the housing. The other access shown in FIG. 1 is a direct access 40 per microstrip line, not allowing communication at 77 GHz but allowing communication at a frequency under harmonic which is preferably F / 6 but which can also be F / 4 or F / 3, or even F / 2 in some cases. The microstrip line corresponding to this access is formed in the upper metallization 26 of the substrate 24 of metallized ceramic. The lower metallization 28 acts as a ground plane. The passage of the line from the inside to the outside of the housing is done through a local interruption of the conductive cover 25, by isolating the microstrip line from the cover, for example by means of an insulating washer 42 interposed between the line and the edge of the cover, or by a notch in the cover.
Du côté de cet accès 40 à fréquence sous-harmonique, la puce MMIC est également reliée à la ligne microstrip par un câblage filaire 44.On the side of this sub-harmonic frequency access 40, the MMIC chip is also connected to the microstrip line by wired wiring 44.
La connexion du composant à l'extérieur peut être faite par l'accès 40 avec un autre composant semblable monté sur le même substrat hybride, ou avec un composant différent monté sur le même substrat hybride ou monté sur un circuit imprimé classique. Cette connexion peut se faire directement à partir de la surface supérieure de métallisation 26 qui sort du boîtier ; par exemple un fil peut être soudé sur cette surface supérieure ; ou bien elle peut se faire par N'intermédiaire d'une broche de connexion 46 soudée sur cette partie externe de la métallisation 26 et faisant alors partie intégrante du composant.The connection of the component to the outside can be made by the access 40 with another similar component mounted on the same hybrid substrate, or with a different component mounted on the same hybrid substrate or mounted on a conventional printed circuit. This connection can be made directly from the upper metallization surface 26 which leaves the housing; for example a wire can be soldered on this upper surface; or it can be done by means of a connection pin 46 welded to this external part of the metallization 26 and then forming an integral part of the component.
On comprend donc que dans un système électronique utilisant ce composant, on montera sur un substrat commun non pas des puces individuelles mais des composants du type qu'on vient de décrire, simplifiant ainsi notablement la conception et la fabrication du système.We therefore understand that in an electronic system using this component, we will mount on a common substrate not individual chips but components of the type just described, thus significantly simplifying the design and manufacture of the system.
La figure 2 représente l'utilisation du composant de la figure 1 dans un système électronique de radar. On y reconnaît l'ensemble (embase 20, puce 22, capot 25) du composant de la figure 1. Celui-ci est monté directement en contact avec une plaque métallique 50 qui est une plaque de guidage d'onde : dans cette plaque est aménagé un guide d'onde 52 dont l'extrémité de sortie vient juste en regard de l'ouverture 32 de l'embase 20, donc en regard de l'extrémité conductrice 36 qui permet un couplage électromagnétique entre le guide d'onde et le boîtier. L'autre extrémité du guide d'onde, extrémité d'entrée dans cette application, arrive en regard du centre d'émission d'une antenne parabolique de réception radar 62 usinée dans une plaque métallique 60 placée contre la plaque de guidage d'onde 50. La plaque de guidage d'onde 50 peut comporter plusieurs guides d'onde, par exemple un deuxième guide 54 débouchant sur une deuxième antenne 64 usinée dans la même plaque d'antenne 60 ; ce guide dirige l'onde électromagnétique reçue de la deuxième antenne vers un deuxième composant en boîtier millimétrique, non représenté, similaire au composant de la figure 1 et monté comme lui sur la plaque 50 formant un substrat commun à plusieurs composants selon l'invention.Figure 2 shows the use of the Figure 1 component in an electronic radar system. We recognize the assembly (base 20, chip 22, cover 25) of the component of Figure 1. It is mounted directly in contact with a metal plate 50 which is a wave guide plate: in this plate is fitted out a waveguide 52, the outlet end of which comes just opposite the opening 32 of the base 20, therefore opposite the conductive end 36 which allows electromagnetic coupling between the waveguide and the housing. The other end of the waveguide, the input end of this application, arrives opposite the emission center of a radar reception parabolic antenna 62 machined in a metal plate 60 placed against the waveguide plate 50. The waveguide plate 50 can comprise several waveguides, for example a second guide 54 leading to a second antenna 64 machined in the same antenna plate 60; this guide directs the electromagnetic wave received from the second antenna to a second component in a millimeter package, not shown, similar to the component in FIG. 1 and mounted like it on the plate 50 forming a substrate common to several components according to the invention.
Dans les réalisations des figures 1 et 2, on a considéré que le substrat de céramique 24 était fixé sur une embase métallique. On pourrait envisager qu'il n'y ait pas d'embase métallique, le boîtier étant constitué par le substrat de céramique métallisée (sur ses deux faces) et le capot métallique. Dans ce cas, l'accès 30 à transition par couplage électromagnétique est réalisé exactement de la même manière ; la zone démétallisée 34 ménagée dans la métallisation arrière 28 tient lieu de l'ouverture 32 qui n'existe pas puisque l'embase n'existe pas. Le guide d'onde arrive exactement en regard de cette démétallisation.In the embodiments of FIGS. 1 and 2, it has been considered that the ceramic substrate 24 was fixed on a metal base. One could consider that there is no metal base, the housing being constituted by the metallized ceramic substrate (on its two faces) and the metal cover. In this case, the access 30 with transition by electromagnetic coupling is carried out in exactly the same way; the demetallized zone 34 formed in the rear metallization 28 takes the place of the opening 32 which does not exist since the base does not exist. The waveguide arrives exactly opposite this demetallization.
Dans une réalisation différente, on peut prévoir que la ligne microruban, dont une extrémité libre sert de transition électromagnétique sans contact, est portée par une puce MMIC (la même ou une autre que la puce 22) au lieu d'être portée par un substrat céramique comme c'est le cas sur les figures 1 et 2. Dans ce cas, la puce MMIC qui sert ainsi de transition électromagnétique est fixée sur une embase métallique du boîtier, une partie de la puce débordant en regard d'une ouverture ménagée dans l'embase, ouverture qui elle-même est en regard d'un guide d'onde. L'extrémité libre de ligne micro-ruban portée par la puce MMIC vient alors en regard de l'ouverture dans l'embase pour constituer une transition électromagnétique sans contact à travers cette ouverture.In a different embodiment, it can be provided that the microstrip line, one free end of which serves as a contactless electromagnetic transition, is carried by an MMIC chip (the same or another than chip 22) instead of being carried by a substrate ceramic as is the case in FIGS. 1 and 2. In this case, the MMIC chip which thus serves as an electromagnetic transition is fixed to a metal base of the housing, a part of the chip projecting opposite an opening formed in the base, an opening which itself faces a waveguide. The free end of the microstrip line carried by the MMIC chip then comes opposite the opening in the base to constitute an electromagnetic transition without contact through this opening.
Dans ce qui précède, on a proposé une transition par couplage électromagnétique qui utilise le couvercle du boîtier comme réflecteur pour réaliser la transition. Mais on peut envisager aussi d'autres types de transition par couplage, par exemple des transitions sans réflecteur, utilisant la géométrie des différents éléments du boîtier pour favoriser le couplage électromagnétique. Par exemple, une transition qui utilise un couplage électromagnétique entre une ligne microstrip en face supérieure du substrat 24 (ou de la puce 22) et une ligne à fente (démétallisation 34 en forme de fente) sur la face inférieure. Un réflecteur n'est alors pas forcément nécessaire et cette réalisation serait adaptée en particulier aux cas où le couvercle du boîtier serait en matière plastique.In the foregoing, an electromagnetic coupling transition has been proposed which uses the housing cover as a reflector to effect the transition. But we can also consider other types of transition by coupling, for example transitions without reflector, using the geometry of the different elements of the housing to promote electromagnetic coupling. For example, a transition which uses an electromagnetic coupling between a microstrip line on the upper face of the substrate 24 (or of the chip 22) and a slotted line (demetallization 34 in the form of a slit) on the lower face. A reflector is then not necessarily necessary and this embodiment would be particularly suitable for cases where the cover of the housing is made of plastic.
On peut, à l'aide de composants selon l'invention réaliser des systèmes électroniques complets sur des substrats de circuits imprimés peu coûteux (substrats à base de résine) regroupant des composants basse - fréquence (puces de circuit-intégré ou autres composants fonctionnant à basse fréquence), et des composants fonctionnant jusqu'à environ 25 GHz. Ces composants sont reliés à des composants en boîtier millimétrique selon l'invention par des connexions microstrip, et les composants en boîtier millimétrique sont connectés à des antennes par des transitions à couplage électromagnétique sans contact et par des guides d'onde. It is possible, using components according to the invention to realize complete electronic systems on inexpensive printed circuit substrates (resin-based substrates) grouping low-frequency components (integrated circuit chips or other components operating at low frequency), and components operating up to about 25 GHz. These components are connected to components in a millimeter package according to the invention by microstrip connections, and the components in a millimeter package are connected to antennas by non-contact electromagnetic coupling transitions and by waveguides.

Claims

REVENDICATIONS
1. Composant électronique monté en boîtier individuel et destiné à être connecté à d'autres composants d'un système électronique, ce composant étant caractérisé en ce qu'il comprend au moins une puce de circuit-intégré (22) travaillant autour d'une fréquence principale millimétrique F supérieure à 45 GHz, et en ce que le boîtier comporte au moins deux accès (30 et 40) pour la communication de signaux électriques entre l'intérieur et l'extérieur du boîtier, le premier accès (30) étant un accès à transition par couplage électromagnétique sans contact permettant la transmission de signaux à la fréquence de travail principale supérieure à 45 GHz, et le deuxième accès (40) étant un accès à transition de type microruban ou coaxiale permettant la transmission d'une fréquence de travail F/N sous-harmonique de la fréquence principale F.1. Electronic component mounted in an individual box and intended to be connected to other components of an electronic system, this component being characterized in that it comprises at least one integrated circuit chip (22) working around a main millimeter frequency F greater than 45 GHz, and in that the box has at least two ports (30 and 40) for the communication of electrical signals between the inside and the outside of the box, the first port (30) being a transition access by contactless electromagnetic coupling allowing the transmission of signals at the main working frequency greater than 45 GHz, and the second access (40) being a transition access of microstrip or coaxial type allowing the transmission of a working frequency F / N subharmonic of the main frequency F.
2. Composant selon la revendication 1, caractérisé en ce que le boîtier est pourvu d'un capot conducteur (25) placé à une distance du premier accès telle qu'il établisse, au dessus de cet accès, un court-circuit électromagnétique à la fréquence de travail principale, formant ainsi un réflecteur d'onde favorisant la transmission de cette fréquence à travers le premier accès.2. Component according to claim 1, characterized in that the housing is provided with a conductive cover (25) placed at a distance from the first access such that it establishes, above this access, an electromagnetic short circuit to the main working frequency, thus forming a wave reflector favoring the transmission of this frequency through the first port.
3. Composant selon la revendication 2, caractérisé en ce que le capot conducteur est à une hauteur égale au quart de la longueur d'onde, ou un multiple impair du quart de la longueur d'onde de la fréquence de travail, au dessus de l'accès.3. Component according to claim 2, characterized in that the conductive cover is at a height equal to a quarter of the wavelength, or an odd multiple of a quarter of the wavelength of the working frequency, above access.
4. Composant selon l'une des revendications 1 à 3, caractérisé en ce que l'une des puces présentes dans le boîtier comporte des moyens de multiplication de fréquence dans un rapport N pour passer de la fréquence sous-harmonique à la fréquence de travail principale.4. Component according to one of claims 1 to 3, characterized in that one of the chips present in the housing comprises frequency multiplication means in an N ratio to pass from the subharmonic frequency to the working frequency main.
5. Composant selon l'une des revendications 1 à 4, caractérisé en ce qu'il comprend un substrat de céramique (24) dont une première face métallisée est gravée pour constituer une ligne micro-ruban (26) ayant une extrémité libre (36) et dont une autre face est également métallisée pour constituer un plan de masse, le plan de masse étant interrompu en regard de l'extrémité libre, pour permettre un couplage électromagnétique sans contact entre l'extérieur et l'intérieur du boîtier par l'extrémité de ligne.5. Component according to one of claims 1 to 4, characterized in that it comprises a ceramic substrate (24) of which a first metallized face is etched to form a microstrip line (26) having a free end (36) and of which another face is also metallized to constitute a ground plane, the ground plane being interrupted opposite the free end, to allow non-contact electromagnetic coupling between the outside and the inside of the housing at the end of the line.
6. Composant selon la revendication 5, caractérisé en ce que le capot conducteur est à une hauteur égale au quart de la longueur d'onde, ou un multiple impair du quart de la longueur d'onde de la fréquence de travail, au dessus de l'extrémité libre de la ligne micro-ruban.6. Component according to claim 5, characterized in that the conductive cover is at a height equal to a quarter of the wavelength, or an odd multiple of a quarter of the wavelength of the working frequency, above the free end of the micro-ribbon line.
7. Composant selon l'une des revendications 5 et 6, caractérisé en ce qu'il comporte une embase métallique (20) ouverte en regard de l'extrémité (36) de ligne micro-ruban.7. Component according to one of claims 5 and 6, characterized in that it comprises a metal base (20) open opposite the end (36) of microstrip line.
8. Composant selon l'une des revendications 1 à 4, caractérisé en ce qu'il comporte une ou plusieurs puces MMIC fixées sur une embase, l'une des puces comportant une ligne micro-ruban dont une extrémité libre sert de transition électromagnétique sans contact, cette puce débordant au dessus d'une ouverture dans l'embase de manière que l'extrémité libre de la ligne soit située en regard de l'ouverture, afin de constituer une transition électromagnétique sans contact à travers cette ouverture. 8. Component according to one of claims 1 to 4, characterized in that it comprises one or more MMIC chips fixed to a base, one of the chips comprising a microstrip line, one free end of which serves as an electromagnetic transition without contact, this chip projecting over an opening in the base so that the free end of the line is located opposite the opening, in order to constitute a contactless electromagnetic transition through this opening.
EP03799522A 2002-11-22 2003-11-18 Packaged electronic component for applications at millimetric frequencies Withdrawn EP1563567A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0214684A FR2847723B1 (en) 2002-11-22 2002-11-22 ELECTRONIC HOUSING COMPONENT FOR MILLIMETER FREQUENCY APPLICATIONS
FR0214684 2002-11-22
PCT/EP2003/050846 WO2004049496A1 (en) 2002-11-22 2003-11-18 Packaged electronic component for applications at millimetric frequencies

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WO2004049496A1 (en) 2004-06-10
FR2847723A1 (en) 2004-05-28
CN1714467A (en) 2005-12-28
CN100517861C (en) 2009-07-22
AU2003300245A1 (en) 2004-06-18
FR2847723B1 (en) 2006-02-03
KR20050059339A (en) 2005-06-17
HK1086950A1 (en) 2006-09-29
US7388450B2 (en) 2008-06-17
JP2006507740A (en) 2006-03-02
US20060097818A1 (en) 2006-05-11

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