EP1544941A1 - Angepasstes veränderbares Mikrowellendämpfungsglied - Google Patents

Angepasstes veränderbares Mikrowellendämpfungsglied Download PDF

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Publication number
EP1544941A1
EP1544941A1 EP03425804A EP03425804A EP1544941A1 EP 1544941 A1 EP1544941 A1 EP 1544941A1 EP 03425804 A EP03425804 A EP 03425804A EP 03425804 A EP03425804 A EP 03425804A EP 1544941 A1 EP1544941 A1 EP 1544941A1
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EP
European Patent Office
Prior art keywords
line section
lin1
lin2
line
attenuator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03425804A
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English (en)
French (fr)
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EP1544941B1 (de
Inventor
Franco Marconi
Alessandro Zingirian
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Siemens SpA
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Siemens Mobile Communications SpA
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Application filed by Siemens Mobile Communications SpA filed Critical Siemens Mobile Communications SpA
Priority to EP03425804A priority Critical patent/EP1544941B1/de
Priority to DE60320271T priority patent/DE60320271T2/de
Priority to AT03425804T priority patent/ATE392022T1/de
Publication of EP1544941A1 publication Critical patent/EP1544941A1/de
Application granted granted Critical
Publication of EP1544941B1 publication Critical patent/EP1544941B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H01P1/227—Strip line attenuators

Definitions

  • the present invention relates to the field of microwave attenuator and more precisely to a matched microwave variable attenuator.
  • Variable microwave attenuators based on pin diodes are well known in the art. These attenuators are derivable from canonical resistive structures such as the one depicted in Figure 1a , 1b , and 1c , for T -cell, ⁇ -cell, and T-shunt cell, respectively. Dual-port circuits of fig.1a and 1c can be mathematically described by an impedance matrix of the type: where: R 11 is the resistance seen at the 1-1 port, while R 21 is the 2 ⁇ 1 transfer resistances. Similar remarks, of course, apply to elements R 22 and R 12 .
  • R G and R L the internal resistance of the generator and the load
  • the maximum transfer of power from the generator to the load also corresponding to the minimum attenuation, takes place when R G and R L are matched to the resistance seen at the respective ports.
  • Resistive attenuator starts attenuating as the match condition is left out.
  • the desired attenuation is achieved by opportunely dimensioning the elements of the resistance matrix.
  • a microwave variable attenuator is obtainable in line of principle by replacing one or more the resistances of the resistive attenuators with pin diodes having a resistance decreasing with the increase of the DC bias current flowing through them.
  • pin diodes include unwanted reactive elements, such as: junction capacitance, case capacitance, and chip-to-case connection inductance, which limit their performances and call for an optimisation of the design inside the operation band.
  • Two-port network including both dissipative and reactive elements are modelled by an impedance matrix Z whose elements [ z x , y ] include both resistance and reactance components, or by an admittance matrix Y whose elements [ y x,y ] include both admittance ad susceptance components.
  • the unwanted reactive elements namely reactance or susceptance, limit the maximum attenuation (decoupling) on serial branches of the attenuator, whereas they increase the insertion loss on parallel branches.
  • S scattering matrix
  • apex - and + indicate signals outgoing from or incoming to two transmission lines respectively connected to the ports indicated by subscript 1 and 2 .
  • S 11 is the reflection coefficient in the input line
  • S 21 is the transmission coefficient into output line from input line. Similar remarks, of course, apply to elements S 22 and S 12 .
  • the microwave attenuators described by matrix S can also attenuate by exploiting the mechanism of reflecting the waves towards the input port due to the various unmatching condition along the propagation path. In the latter case the attenuation can take place without or with partial power dissipation in the load.
  • Preferred embodiments of pin diode attenuators are the ones having large attenuations and low insertion losses.
  • the latter being defined as the ratio between the power delivered to the load before and after the insertion of the attenuator driven for null attenuation.
  • the requisite of low insertion loss cannot leave out of consideration the frequency response of the microwave attenuators. In order to reach greater attenuations more attenuation cells can be cascaded to each other.
  • the attenuator includes a configuration having two contiguous ⁇ /4 microstrip lines with characteristic impedance of Z T serially connected at the two ends with two respective microstrips of Z O , in their turn connected to the input and output ports of the attenuator.
  • the anode of a first pin diode is connected between the ⁇ /4 microstrips while the cathode is grounded.
  • the cathode of a second pin diode is connected between the two microstrips of different impedance, while the anode is connected to a third ⁇ /4 microstrip whose impedance is less than Z O .
  • the two diodes are serially biased so that their resistances are the same.
  • the attenuator of fig.2 seems to be inspired to some golden technical rules to achieve good designs with pin diode attenuators, in particular:
  • the major drawback of the attenuator of the cited invention is that to be disadapted (unmatched) both at the input and the output ports, so that two circulators are needed, or equivalent devices, such as hybrids employed with balanced structures. Circulators and hybrids have manufacturing costs comparable if not greater than the cost of the attenuator. Furthermore the area of the complete circuit on the dielectric substrate is noticeable increased to the detriment of miniaturization requirements.
  • microwave variable attenuators including pin diodes
  • the main object of the present invention is that to indicate an alternative structure able to perform prevalently dissipative attenuation keeping the adaptation at both the input and output ports unchanged for all the values of the variable attenuation, without additional circulators, hybrids, or similar devices are needed.
  • the invention achieves said object by providing a variable microwave attenuator, as disclosed in claim 1.
  • variable attenuator consists of a dielectric substrate which supports a microstrip layout plus some discrete components mounted on it, including:
  • the two line sections are parallel straight-lines.
  • a ring configuration of the microstrip layout according to a second preferred embodiment allows to reduce the occupied surface on the substrate and increase the decoupling between the microstrips.
  • the two pin diodes are serially biased to set equal values of their resistances.
  • the one of the invention keeps as far as possible constant the adaptation at the input and output ports during the whole attenuation range. In any case, quite a different structure is disclosed indeed.
  • an electrical model of the attenuator includes a first bifilar line LIN1 connected between the input and the output ports, and a second bifilar line LIN2 visible under the first one.
  • the input and the output ports are not specifically indicated because the attenuator is symmetric.
  • the two bifilar lines are unbalanced, having a wire connected to the ground.
  • the second bifilar line LIN2 is ⁇ /2 long and presents a characteristic impedance Z, whose value is indifferent for the aim of the invention.
  • the cathode of the second diode is connected to ground, while the anode is connected to the line LIN2, in such a way the second pin diode results biased in series with the first one.
  • the series of the two pin diodes is fed by a current Idc, injected into the anode of the first diode by a current generator A l .
  • a first microstrip embodiment of the electrical model of the attenuator of the preceding figure is shown.
  • the metallic layout of the upper face of a dielectric alumina substrate is depicted.
  • the bottom face of the substrate includes a metallized ground plane in correspondence of the upper layout for achieving microstrip lines.
  • the metallic layout is lay down by means of well consolidated methods, for example sputtering.
  • the thickness and the width of the lines LIN1 and LIN2 are calculated for obtaining the desired characteristic impedances Z O and Z, respectively. Connections to the ground plane are performed by metallized through holes.
  • Elements other than microstrips are connected by advantageously employing known tools of the surface mount technology.
  • the two resistors R O can be manufactured by laying down resistive metals.
  • a second microstrip embodiment of the electrical model depicted in fig.3a is shown.
  • the second embodiment differs from the preceding one by the only different shape of the metallic layout which is circular instead of rectangular but the electrical behaviour is the same.
  • the ring configuration allows to save space on the upper face of the substrate of alumina.
  • the inventors' intuitions of above have been taken into duly consideration to develop a design for obtaining the circuital structure (unknown) of a variable microwave attenuator.
  • R1* R2
  • the inventors have decided to act on the serial branch R1 of the T-shunt attenuator, maintaining as far as possible the equivalence of the remaining part. This choice is motivated by the fact of trying to remove the pin diode from the serial branch, according to the arguments raised in the introduction. Because of the symmetry of the T-shunt attenuator, two quarter wave line sections and a resistance Zo 2 / R2 shall be used, as shown in the upper part of fig.3b .
  • Equality (7b) is valid on condition that the electrical equivalence during the passage from the purely resistive T-shunt of fig.1c to the microwave attenuator of fig.3b is kept unchanged. During this passage the effect of the phase offset of the signal across the various branches must be taken into account.
  • the RF signal coming to the attenuator is split in two signals, a first one travels along the two contiguous ⁇ /4 tracts undergoing a ⁇ /2 phase offset at the output of the attenuator, the second one crosses the two resistors and leaves the attenuator with a phase offset which depends on the electrical length of the connection.
  • Most critic conditions occur in case the two diodes are interrupted and R1*, R2 tend to ⁇ .
  • a line section having an electrical length of ⁇ /2 shall be inserted in series with the two resistances Ro. This prevents the two resistors Ro being crossed by a current when the two diodes are interrupted, or a very low attenuation is set. In fact, phase offset across two whatever paths departing from the input and joining at the output of the attenuator is the same, in this circumstance the two ends of each resistor Ro are equipotential and the current is null. Furthermore, the insertion of the ⁇ /2 line section does not compromise the behaviour of the network.
  • a ⁇ /2 transmission line has the property of reporting the impedance present at one end to the other end unchanged, independently of its characteristic impedance. The property is made immediately perceptible on the Smith's chart, where a ⁇ /2 impedance transformation corresponds to a complete turn terminating in the starting point.
  • both the embodiments of figures 3b and 3c include microstrips LIN1 and LIN2 equal to each other; that is with the same electrical length and the same dimensional length, in this case the characteristic impedance Z of the microstrip LIN2 is equal to Zo of course. But this is not the rule because embodiments with LIN1 and LIN2 of the same electrical ⁇ /2 length and different dimensional lengths are possible; obviously, different shapes of the layout are resulting.

Landscapes

  • Non-Reversible Transmitting Devices (AREA)
  • Attenuators (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Toilet Supplies (AREA)
EP03425804A 2003-12-17 2003-12-17 Angepasstes veränderbares Mikrowellendämpfungsglied Expired - Lifetime EP1544941B1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03425804A EP1544941B1 (de) 2003-12-17 2003-12-17 Angepasstes veränderbares Mikrowellendämpfungsglied
DE60320271T DE60320271T2 (de) 2003-12-17 2003-12-17 Angepasstes veränderbares Mikrowellendämpfungsglied
AT03425804T ATE392022T1 (de) 2003-12-17 2003-12-17 Angepasstes veränderbares mikrowellendämpfungsglied

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425804A EP1544941B1 (de) 2003-12-17 2003-12-17 Angepasstes veränderbares Mikrowellendämpfungsglied

Publications (2)

Publication Number Publication Date
EP1544941A1 true EP1544941A1 (de) 2005-06-22
EP1544941B1 EP1544941B1 (de) 2008-04-09

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EP (1) EP1544941B1 (de)
AT (1) ATE392022T1 (de)
DE (1) DE60320271T2 (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2311704C1 (ru) * 2006-03-13 2007-11-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2314603C2 (ru) * 2006-02-10 2008-01-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2324265C2 (ru) * 2006-05-22 2008-05-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2401491C1 (ru) * 2009-11-09 2010-10-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч с непрерывным управлением
RU2421851C1 (ru) * 2010-02-03 2011-06-20 Михаил Сергеевич Афанасьев Интегральный коммутатор свч-сигналов
US8279019B2 (en) 2010-05-10 2012-10-02 Mediatek Singapore Pte. Ltd. Millimeter-wave switches and attenuators
RU2592717C1 (ru) * 2015-04-09 2016-07-27 Акционерное общество "Всероссийский научно-исследовательский институт "Градиент" Микрополосковый корректор амплитудно-частотной характеристики

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2340048C1 (ru) * 2007-04-26 2008-11-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2420836C1 (ru) * 2010-06-11 2011-06-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2435255C1 (ru) * 2010-08-03 2011-11-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") Аттенюатор свч
RU2469443C1 (ru) * 2011-06-16 2012-12-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Дискретный широкополосный аттенюатор свч
RU2461920C1 (ru) * 2011-08-03 2012-09-20 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Широкополосный аттенюатор свч с непрерывным управлением

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002204138A (ja) * 2000-12-28 2002-07-19 Nec Eng Ltd 可変減衰器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002204138A (ja) * 2000-12-28 2002-07-19 Nec Eng Ltd 可変減衰器

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KOBAYASHI K ET AL: "GaAs HBT PIN diode attenuators and switches", 14 June 1993, MICROWAVE AND MILLIMETER-WAVE MONOLITHIC CIRCUITS SYMPOSIUM, 1993. DIGEST OF PAPERS., IEEE 1993 ATLANTA, GA, USA 14-15 JUNE 1993, NEW YORK, NY, USA,IEEE, US, PAGE(S) 151-154, ISBN: 0-7803-1322-4, XP010069086 *
NAVARRO M S ET AL: "Non-reflecting electronically variable attenuator", 9 August 1999, , PAGE(S) 541-544, XP010509842 *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 11 6 November 2002 (2002-11-06) *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2314603C2 (ru) * 2006-02-10 2008-01-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2311704C1 (ru) * 2006-03-13 2007-11-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2324265C2 (ru) * 2006-05-22 2008-05-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч
RU2401491C1 (ru) * 2009-11-09 2010-10-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") Аттенюатор свч с непрерывным управлением
RU2421851C1 (ru) * 2010-02-03 2011-06-20 Михаил Сергеевич Афанасьев Интегральный коммутатор свч-сигналов
US8279019B2 (en) 2010-05-10 2012-10-02 Mediatek Singapore Pte. Ltd. Millimeter-wave switches and attenuators
RU2592717C1 (ru) * 2015-04-09 2016-07-27 Акционерное общество "Всероссийский научно-исследовательский институт "Градиент" Микрополосковый корректор амплитудно-частотной характеристики

Also Published As

Publication number Publication date
DE60320271T2 (de) 2009-05-14
EP1544941B1 (de) 2008-04-09
DE60320271D1 (de) 2008-05-21
ATE392022T1 (de) 2008-04-15

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