EP1524675B1 - Vorrichtung und Verfahren zur Verschiebung von Teilchen - Google Patents

Vorrichtung und Verfahren zur Verschiebung von Teilchen Download PDF

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Publication number
EP1524675B1
EP1524675B1 EP04104982A EP04104982A EP1524675B1 EP 1524675 B1 EP1524675 B1 EP 1524675B1 EP 04104982 A EP04104982 A EP 04104982A EP 04104982 A EP04104982 A EP 04104982A EP 1524675 B1 EP1524675 B1 EP 1524675B1
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EP
European Patent Office
Prior art keywords
substrate
neff
grating
index
nsuper
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
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EP04104982A
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English (en)
French (fr)
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EP1524675A1 (de
Inventor
Stéphanie GAUGIRAN
Jérôme HAZART
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/006—Manipulation of neutral particles by using radiation pressure, e.g. optical levitation

Definitions

  • the invention relates to the field of displacement techniques and manipulation of particles by optical forces.
  • the applications envisaged are the non-contact displacement of particles (balls of different materials, nano-objects, cells or other biological objects) over long distances (several centimeters) and with predefined trajectories. It is also possible to envisage particle sorting applications based on interactions with light that are different depending on the nature of the particle.
  • This method poses trapping difficulties, in particular nanometric particles. It takes at least several seconds to trap, for example, a gold particle of 36 nm in diameter.
  • This technique makes it possible to collect, over a guide, particles randomly dispersed (thanks to the gradient forces) and then to move these particles along the guide (diffusion forces).
  • the method also applies to metal particles but has the disadvantage of being very dependent on the surface state of the guide: a large roughness manages to permanently stop the particle.
  • the invention uses optical forces generated by a diffraction grating.
  • the displacement forces of the particle are generated by the diffraction of light from the network and are oriented according to the characteristics of the network.
  • the network is used as an element that decouples the light that propagates in a waveguide.
  • the injection of light into the guide can be done using a coupling by the wafer, a prism or using another network.
  • the light from the network is used as a real engine not only to move the particles, but also to choose their paths and speeds.
  • the invention also relates to a device for moving a particle as defined in claim 18.
  • the network diffracts only one order to the medium in which the particle is located.
  • no light is diffracted to the substrate.
  • the guide has an effective index neff, the network a step ⁇ , the substrate an index nsub such that nsuper> nsub, and the ratio ⁇ / ⁇ is between neff - super and neff - nsub or between neff + nsub and neff + nsuper.
  • the device may further comprise at least one intermediate layer between the substrate and the waveguide, this layer having a refractive index lower than that of the liquid.
  • the network has a pitch ⁇ greater than or equal to ⁇ / (neff / nsup + 1) nsup, and / or less than or equal to 2. ⁇ / (neff / nsup + 1) nsup, where neff is the index effective waveguide.
  • the substrate may further comprise means for reflecting the light diffracted towards the substrate, for example a Bragg mirror.
  • the network comprises several types of patterns, a first type of patterns and at least a second type of patterns, different from the first, for example by at least its pitch and / or a lateral dimension and / or its height.
  • the network may also have a curvature.
  • the invention makes it possible to move particles having, for example, a diameter of between 5 nm and 100 ⁇ m.
  • the invention allows a displacement of particles at a speed, for example, greater than 500 nm / s or 1 ⁇ m / s or 5 ⁇ m / s.
  • the invention also relates to a method for sorting particles having different refractive indices or different sizes, in which a displacement method as described above is used.
  • a first embodiment is described in connection with the figure 1 .
  • a waveguide 2 is formed on a substrate 4.
  • a diffraction grating 6 is located or deposited or formed on this guide 2.
  • a radiation 7 (a mode is designated by the reference 8) is injected into the guide 2, for example by means of a coupling by the wafer, by means for injecting into the guide radiation at the desired wavelength.
  • such means comprise a prism or other network.
  • the network 6 makes it possible to decouple the light from the guided mode to the outside.
  • the patterns of the grating will therefore decouple the injected light and cause a diffraction phenomenon above and below the grating 6, respectively in the medium 14 and the substrate 4.
  • the diffracted light In medium 14, the diffracted light generates an "optical force" which makes it possible to act on, for example, a particle 10 located near the grating.
  • a grating whose pitch is between the two limit steps given by the formulas (3) and (4), so as to have diffraction only for a single order, and therefore a propulsion of the particles in one direction.
  • the superstrate 14 considered has an index of 1.33 (identical to that of the water) and the waveguide 2, under the network, an effective index of 1.6.
  • the working wavelength is 1064 nm.
  • the diffraction limit (3) of the grating is reached, under the conditions specified above: the direction of the diffracted wave is then -90 °, which means that the particle moves in the direction opposite to the light in the guide.
  • a further increase of the pitch causes a reversal of the diffraction direction (positive angles) and a reversal of the direction of the particle.
  • We then reach the diffraction limit of the order -2 for ⁇ 726nm.
  • the diffraction direction can be varied between -90 ° and + 5.8 °.
  • the order -1 is diffracted by the network and all the radiation is exerted in the same direction.
  • the particle 10 placed above the grating 6 will be struck by the diffracted wave which will push it in the chosen direction.
  • cross sections depend directly on the optical index of the particle but also on its volume.
  • two particles of different materials or of different size will have different speeds of movement, which allows for example to perform a sort of these particles.
  • a 1 ⁇ m diameter gold ball will move faster than a latex ball of the same size.
  • the device thus described has the property of being able to move, without contact and with high speeds (several microns per second, or more) particles (or biological objects) of micrometric or nanometric size, this size being for example between 10 ⁇ m and 50 nm. In addition, it allows to sort particles of different natures or sizes.
  • n sub represents the index of the substrate 4
  • an intensity will actually be diffracted in the latter if: eff + not sub > ⁇ ⁇
  • the Figures 3A and 3B identify the different possible cases according to the values relative indices of substrate 4 and superstrate 14.
  • the figure 3A corresponds to the case where nsuper ⁇ nsub and the figure 3B in case nsuper> nsub.
  • the lines D2 and D4 correspond to the case nsuper> nsub, and the lines D1 and D3 to the case nsuper ⁇ nsub.
  • zones A1 and A'1 of the figure 3B (nsuper> nsub and neff - nsuper ⁇ / ⁇ ⁇ neff - nsub (A1) or neff + nsub ⁇ / ⁇ ⁇ neff + nsuper (A'1)), there is diffraction in the superstrate and no loss in the substrate. Losses appear in the substrate for zone A2, for which there is still diffraction in the superstrate, that is to say when neff + nsub> ⁇ / ⁇ > neff-nsub.
  • an intermediate layer situated between the substrate 4 and the waveguide 2 the index of which is less than that of the water. This will be a diffraction phenomenon only in water and without any loss of energy in the substrate.
  • This intermediate layer could be for example a layer of silica deposited by a sol-gel technology which has an index of about 1.22.
  • FIG. 5 Another embodiment is shown on the figure 5 . It consists in placing a Bragg mirror 20 in the substrate 4.
  • This mirror returns to the external medium 14 the light diffracted in the substrate 4.
  • the multilayer deposit 20 comprises an alternation of thin dielectric films that do not absorb light at the wavelength of the beam 7. These have successively a high refractive index, denoted nh (possible materials: TiO2, HfO2, Si3N4 , Ta2O5, Al2O3, In2O3) and a low index noted nb (possible materials: SiO2, MgF2, LiF).
  • PVD Physical Vapor Deposition
  • CVD Chemical Vapor Deposition
  • the wave reflected by the mirror will, after reflection on this mirror, then after having crossed the network, the same direction as that from network 6 to the superstrate.
  • the direction of the particle 10 is related to the pitch of the network. It is therefore possible to realize devices on which real trajectory engineering of the particle is carried out by controlling the pitch of the network. Indeed, as shown above, it is possible, by controlling the pitch of the grating, to vary the diffraction angles between -90 ° and + 5 °. For example, on the figure 6 a particle 10 injected on the right will levitate by the action of the diffracted waves 22, these waves having a large or predominant vertical component, then being displaced towards the left side of the figure by the waves 23, then 24, progressively more inclined relative to a vertical direction.
  • the lateral dimensions of the pattern of the grating (width w1 as indicated on FIG. figure 6 and / or width w2, measured in a direction perpendicular to the plane of the figure 6 and as shown on the Figure 7A , and / or its height h, allow control of the diffracted energy.
  • the variations of the pitch of the network and its lateral dimensions will for example be realized thanks to to an appropriate mask.
  • the variations in height of the patterns will be made either by the use of several levels of masking or by the use of layers having thickness gradients associated with selective etching.
  • the network used may comprise a plurality of patterns, each pattern being different from the other patterns, for example by at least its pitch and / or a width w1 or w2 and / or its height h.
  • This embodiment is represented on the Figures 8A (schematic view from above) and 8B. It makes it possible to generate a "lateral" diffraction of the radiation, which will meet the particle and guide it along a "focal line". This will control the position of the particle in the three dimensions of space, which makes it possible to envisage more complex trajectories (for example a nonlinear or serpentine trajectory or a curved trajectory in a plane parallel to the substrate).
  • the realization of this type of device is similar to that of the basic device but uses a mask on which curves are printed instead of the traditional lines of the network.
  • the waveguide can be made by a traditional ion exchange method with silver ions on a BK7 substrate.
  • the thickness of the guide will be chosen to work with a single-mode guide for the desired wavelength. It will also be possible to use any dielectric material that makes it possible to efficiently guide the light or to work on a silicon substrate.
  • the network may be made of resin, titanium oxide (TiO2) or nitride. It can be engraved by electron beam lithography technology or by precision lithography technology.
  • Another embodiment relates to a structure with a Bragg mirror, as on the figure 5 .
  • the substrate 4 is for example silicon.
  • the substrate may be covered with a multilayer formed by the alternation of thin layers of 264 nm thick silica and thin layers of titanium dioxide. 123 nm thickness deposited in IBS.
  • the multilayer will be composed of 20 thin layers and then covered by a layer of silica insulation 2 microns thick. The mirror thus produced makes it possible to reflect all the rays arriving in an angular range of between 35 ° and 70 °.
  • the waveguide 2 may, for example, be made of nitride (Si3N4) by conventional deposition techniques (LPCVD for example). It will be possible to choose a thickness of 223 nm of nitride and a guide width of 1 ⁇ m.
  • the network 6 will be made of resin, titanium oxide (TiO2) or nitride thanks to several superimposed masking levels that allow a spatial variation in the thickness of the network.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Combined Means For Separation Of Solids (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Glanulating (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)

Claims (31)

  1. Verfahren zum Bewegen eines Partikels (10), bei dem eine Vorrichtung zum Einsatz kommt, die ein Substrat (4), einen Wellenleiter (2), der auf dem Substrat ausgebildet ist, und ein Gitter (6), das auf dem Wellenleiter ausgebildet ist, aufweist, wobei:
    - Licht mit einer Wellenlänge λ in den Wellenleiter injiziert wird,
    - das Licht, welches sich in dem Wellenleiter ausbreitet, mittels des Gitters zu einem Medium (14) mit einem Index super gebeugt wird, in welchem sich das Partikel befindet.
  2. Verfahren nach Anspruch 1, wobei der Rasterschritt des Gitters so beschaffen ist, dass dieses nur eine einzige Ordnung zu dem Medium beugt, in welchem sich das Partikel befindet.
  3. Verfahren nach einem der Ansprüche 1 oder 2 wobei der Index nsuper und der Index des Substrates so beschaffen sind, dass kein Licht zu dem Substrat (4) gebeugt wird.
  4. Verfahren nach Anspruch 3, wobei der Wellenleiter (2) einen effektiven Index neff und das Gitter einen Rasterschritt Λ aufweist, das Substrat einen solchen Index nsub aufweist, dass nsuper > nsub ist, und das Verhältnis λ/Λ zwischen neff - nsuper und neff - nsub oder zwischen neff + nsub und neff + nsuper liegt.
  5. Verfahren nach einem der Ansprüche 1 bis 4, wobei das Medium (14) ein flüssiges Medium ist und die Vorrichtung außerdem mindestens eine Zwischenschicht zwischen dem Substrat (4) und dem Wellenleiter (2) aufweist, wobei diese Schicht einen Brechungsindex aufweist, der kleiner ist als derjenige der Flüssigkeit (14) ist.
  6. Verfahren nach einem der Ansprüche 1 bis 5, wobei das Gitter einen Rasterschritt Λ aufweist, der größer oder gleich λ/ (neff/nsuper + 1) nsuper ist, wobei neff der effektive Index des Wellenleiters ist.
  7. Verfahren nach einem der Ansprüche 1 bis 5, wobei das Gitter einen Rasterschritt A aufweist, der kleiner oder gleich 2.λ/(neff/nsuper + 1) nsuper ist, wobei neff der effektive Index des Wellenleiters ist.
  8. Verfahren nach einem der Ansprüche 1 bis 5, wobei das Substrat außerdem Mittel zur Reflexion des zu dem Substrat gebeugten Lichtes aufweist.
  9. Verfahren nach Anspruch 7, wobei das Substrat einen Bragg-Spiegel (20) aufweist.
  10. Verfahren nach einem der Ansprüche 1 bis 7, wobei das Gitter einen ersten Typ von Motiven und mindestens einen zweiten Typ von Motiven, der von dem ersten verschieden ist, aufweist.
  11. Verfahren nach Anspruch 10, wobei sich der zweite Typ von Motiven von dem ersten mindestens in seinem Rasterschritt und/oder einer seitlichen Abmessung und/oder seiner Höhe unterscheidet.
  12. Verfahren nach einem der Ansprüche 1 bis 9, wobei mindestens ein Teil des Wellenleiters eine seitliche Ausdehnung hat, die kleiner als diejenige des Gitters ist.
  13. Verfahren nach einem der Ansprüche 1 bis 10, wobei das Gitter eine Krümmung aufweist.
  14. Verfahren nach einem der vorhergehenden Ansprüche, wobei das Partikel einer gekrümmten Trajektorie in einer zu dem Substrat (4) parallelen Ebene folgt.
  15. Verfahren nach einem der Ansprüche 1 bis 14, wobei das Partikel einen Durchmesser aufweist, der zwischen 5 nm und 100 µm liegt.
  16. Verfahren nach einem der Ansprüche 1 bis 15, wobei die gebeugte Intensität so beschaffen ist, dass das Partikel mit einer Geschwindigkeit bewegt wird, die größer als 500 nm/s oder als 1 µm/s oder als 5 µm/s ist.
  17. Verfahren zu Sortieren von Partikeln mit unterschiedlichen Brechungsindizes oder unterschiedlichen Größen, bei welchem ein Verfahren zum Bewegen nach einem der Ansprüche 1 bis 16 abgewendet wird.
  18. Vorrichtung zum Bewegen eines Partikels (10), die ein Substrat (4), einen Wellenleiter (2) , der auf dem Substrat ausgebildet ist, und ein Gitter (6), das auf dem Wellenleiter ausgebildet ist, aufweist, wobei dieses Gitter ermöglicht, Licht mit einer Wellenlänge λ, welches sich in dem Wellenleiter ausbreitet, zu einem äußeren Medium mit einem Index nsuper zu beugen, dadurch gekennzeichnet, dass:
    mindestens ein Teil des Wellenleiters eine seitliche Ausdehnung hat, die kleiner als diejenige des Gitters ist.
  19. Vorrichtung nach Anspruch 18, wobei der Rasterschritt des Gitters so beschaffen ist, dass dieses nur eine einzige Ordnung mit der Wellenlänge λ beugt.
  20. Vorrichtung nach Anspruch 18 oder 19, Mobei der Index nsuper und der Index des Substrates so beschaffen sind, dass kein Licht mit der Wellenlänge λ zu dem Substrat (4) gebeugt wird.
  21. Vorrichtung nach einem der Ansprüche 18 bis 20, wobei der Wellenleiter (2) einen effektiven Index neff und das Gitter einen Rasterschritt Λ aufweist, das Substrat einen solchen Index nsub aufweist, dass nsuper > nsub ist, und das Verhältnis λ/Λ zwischen neff - nsuper und neff - nsub oder zwischen neff + nsub und neff + nsuper liegt.
  22. Vorrichtung nach einem der Ansprüche 18 bis 21, die außerdem mindestens eine Zwischenschicht zwischen dem Substrat (4) und dem Wellenleiter (2) aufweist, wobei diese Schicht einen Brechungsindex aufweist, der kleiner als derjenige von Wasser ist.
  23. Vorrichtung nach Anspruch 22, wobei die Zwischenschicht eine Siliciumdioxid-Schicht ist.
  24. Vorrichtung nach einem der Ansprüche 18 bis 23, wobei das Gitter eisen Rasterschritt Λ aufweist, der größer oder gleich λ/ (neff/nsuper + 1) nsuper ist, wobei neff der effektive Index des Wellenleiters ist.
  25. Vorrichtung nach einem der Ansprüche 18 bis 24, wobei das Gitter einen Rasterschritt Λ aufweist, der kleiner oder gleich 2.λ/(neff/nsuper + 1)nsuper ist, wobei neff der effektive Index des Wellenleiters ist.
  26. Vorrichtung nach einem der Ansprüche 18 bis 25, wobei das Substrat außerdem Mittel zur Reflexion des zu dem Substrat gebeugten Lichtes aufweist.
  27. Vorrichtung nach Anspruch 26, wobei das Substrat einen Bragg-Spiegel (20) aufweist.
  28. Vorrichtung nach einem der Ansprüche 26 oder 27, die außerdem eine schicht mit einem Index, der kleiner als derjenige des Wellenleiters ist, aufweist, die sich zwischen dem Wellenleiter und den Reflexionsmitteln befindet.
  29. Vorrichtung nach einem der Ansprüche 18 bis 28, wobei das Gitter einen ersten Typ von Motiven und mindestens einen zweiten Typ von Motiven, der von dem ersten verschieden ist, aufweist.
  30. Vorrichtung nach Anspruch 29, wobei sich der zweite Typ von Motiven von dem ersten mindestens in seinem Rästerschritt und/oder einer seitlichen Abmessung und/oder seiner Höhe unterscheidet.
  31. Vorrichtung nach einem der Ansprüche 18 bis 30, wobei das Gitter eine Krümmung in einer zu dem Substrat parallelen Ebene aufweist.
EP04104982A 2003-10-14 2004-10-12 Vorrichtung und Verfahren zur Verschiebung von Teilchen Not-in-force EP1524675B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0350679 2003-10-14
FR0350679A FR2860886B1 (fr) 2003-10-14 2003-10-14 Dispositif de deplacement de particules

Publications (2)

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EP1524675A1 EP1524675A1 (de) 2005-04-20
EP1524675B1 true EP1524675B1 (de) 2011-04-06

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US (2) US7211787B2 (de)
EP (1) EP1524675B1 (de)
JP (1) JP2005161514A (de)
AT (1) ATE504925T1 (de)
DE (1) DE602004032097D1 (de)
FR (1) FR2860886B1 (de)

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FR2863182B1 (fr) * 2003-12-04 2006-10-13 Commissariat Energie Atomique Procede de concentration de particules.
JP5284036B2 (ja) * 2007-11-14 2013-09-11 キヤノン株式会社 発光装置
JP2011065546A (ja) * 2009-09-18 2011-03-31 Hitachi Solutions Ltd ファイル検索システム及びプログラム
KR101817638B1 (ko) 2016-08-31 2018-01-11 국방과학연구소 유전체다층박막 회절격자
RU2666416C1 (ru) * 2017-07-14 2018-09-07 федеральное государственное автономное образовательное учреждение высшего образования "Тюменский государственный университет" Способ очистки твердой поверхности от микрочастиц

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Also Published As

Publication number Publication date
US20050184230A1 (en) 2005-08-25
US7211787B2 (en) 2007-05-01
FR2860886A1 (fr) 2005-04-15
EP1524675A1 (de) 2005-04-20
US20070145256A1 (en) 2007-06-28
US7633056B2 (en) 2009-12-15
DE602004032097D1 (de) 2011-05-19
FR2860886B1 (fr) 2005-12-23
ATE504925T1 (de) 2011-04-15
JP2005161514A (ja) 2005-06-23

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