EP1364413A1 - Opto-electronic component - Google Patents

Opto-electronic component

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Publication number
EP1364413A1
EP1364413A1 EP02719924A EP02719924A EP1364413A1 EP 1364413 A1 EP1364413 A1 EP 1364413A1 EP 02719924 A EP02719924 A EP 02719924A EP 02719924 A EP02719924 A EP 02719924A EP 1364413 A1 EP1364413 A1 EP 1364413A1
Authority
EP
European Patent Office
Prior art keywords
layer
component according
electronic component
amorphous silicon
optoelectronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP02719924A
Other languages
German (de)
French (fr)
Inventor
Peter Rieve
Jens Prima
Konstantin Seibel
Walder Marcus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics NV
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STMicroelectronics NV
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Filing date
Publication date
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Publication of EP1364413A1 publication Critical patent/EP1364413A1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent consisting of a substrate with a microelectronic circuit, on the surface of which a first layer of intrinsically conductive amorphous silicon a-Si: H or its alloys which is electrically contacted is arranged, wherein in Light incident direction of the first layer is arranged at least one further optically active layer, and a method for its production.
  • filters to suppress undesired infrared radiation, for example interference filters or colored glass filters, which suppress light with a wavelength above about 680 nm.
  • filters have the disadvantage, on the one hand, that they represent an additional outlay of a constructive or production-related nature, for example if they are integrated into the lens system in the optical beam path of a camera system, and, on the other hand, they have the disadvantage that they also represent a not inconsiderable proportion of the light absorb in the desired visible spectral range and thus reduce the overall sensor sensitivity.
  • the object of the invention is to improve an optoelectronic component of the type mentioned at the outset in such a way that a high spectral sensitivity in the visible light range and correspondingly a high suppression of the sensitivity to radiation in the infrared range are achieved without additional design effort.
  • the production of the first layer of intrinsically conductive amorphous silicon is carried out by alloying with carbon in a concentration of 2 to 15 atomic percent such that the band gap of the semiconductor material in the first layer is at least 1.8 eV.
  • this layer is produced in the PECVD process from silane (SiH 4 ) and methane (CH 4 ), the silane / methane mixture ratio being between 2: 1 and 1: 1. This results in layers with a carbon concentration of 2 to 15 atomic percent.
  • the silane / methane gas mixture can be diluted by adding hydrogen (H 2 ) in order to improve the electrical layer quality.
  • the preferred hydrogen volume fraction, based on the total gas mixture is 75 to 95 volume percent.
  • silane and methane other gases containing silicon or carbon can also be used, for example Si 2 H6, C 2 H 2 , C 2 H 4 , C 2 H 6 , or also gases which contain both silicon and carbon, for example (SiH 3 ) CH 3 .
  • the invention is characterized in that a component is realized in which a material changed in accordance with the alloy conditions is used in the intrinsically conductive absorption layer. This ensures that photons with an energy smaller than the band gap are not absorbed in the first layer, but only in the back contact of the component, which closes the component towards the substrate. At this point, however, the photons do not contribute to the generation of the photocurrent. As a result, the component has a noticeable infrared suppression and thus makes the infrared cut-off filters, which are essential in the sensor systems manufactured according to the prior art, superfluous.
  • the microelectronic circuit is a single semiconductor transistor in each pixel. This gives a so-called TFT transistor (thin-film transistor). Alternatively, a switching diode can also be used.
  • Such a component can also be used for use in the X-ray radiation area by applying a further X-ray active scintillation layer.
  • microelectronic circuit is an application-specific circuit (ASIC), the at least one further layer being a doped semiconducting layer which
  • a conductive layer made of a transparent oxide (TCO) is arranged upstream of the light incidence direction.
  • This design creates a component in the form of a TFA sensor (thin-film-on-ASIC), which represents a pixel-by-pixel organized image sensor due to the pixel-by-matrix and matrix-organized arrangement of the structured semiconductor component.
  • the electronic circuits for operating the sensor ie the pixel electronics, the peripheral electronics and the system electronics, are usually implemented in CMOS-based silicon technology and thus form the application-specific integrated circuit (ASIC) in the substrate.
  • ASIC application-specific integrated circuit Separated from it by an insulating layer and connected to it by means of appropriate electrical contacts, a multilayer arrangement as a photodiode is located vertically on the ASIC, which converts electromagnetic radiation into an intensity-dependent photo current. This photo stream is at certain, existing in each pixel Transfer contacts to the underlying pixel electronics.
  • an optoelectronic conversion means in the form of a TFA image sensor with integrated infrared suppression results which is either a photodiode with the layer sequence nip, pin or a photodiode can act in the form of a Schottky diode.
  • a further externally conductive layer is introduced between the intrinsically conductive layer and the back electrode.
  • FIG. 1 shows the layer structure of an optoelectronic component known from the prior art
  • Fig. 3 shows the layer structure of an optoelectronic
  • Component according to an embodiment of the invention shows a comparison of the spectral sensitivities of optoelectronic components, in each case in the wavelength range between 350 and 800 nm.
  • Fig. 1 shows an optoelectronic component as it is basically known from the prior art after its layer structure.
  • a metal layer on the substrate (not shown).
  • an intrinsically conductive layer i) made of amorphous silicon (a-Si: H), over this again a p-doped semiconducting layer, and a transparent conductive oxide layer (TCO) arranged upstream in the direction of light incidence.
  • TCO transparent conductive oxide layer
  • the intrinsic layer (i) consists of amorphous silicon and usually has a band gap of approximately 1.7 eV.
  • the spectral sensitivity of such a component is shown in FIG. 4, curve a. It turns out that above the 680 nm range (i.e. in the infrared range) that is no longer visible to the eye, there is still a clear sensitivity that is undesirable (see above).
  • this element shows a second optoelectronic component, which represents a so-called pin photodiode known per se.
  • this element additionally has an n-doped semiconductor layer between the metal contact to the substrate and the intrinsically conductive a-Si: H layer.
  • This component also has a band gap of about 1.7 eV in the i- Area a spectral sensitivity curve roughly corresponding to FIG. 4, curve a.
  • FIG 3 shows the structure of an image sensor in its implementation by thin film on ASIC technology.
  • the optoelectronic component shown in FIG. 3 consists of a substrate 1, ie a silicon substrate, on the surface of which corresponding integrated circuits are formed. " These integrated circuits are implemented in CMOS technology, and the circuit thus formed is referred to as an application specific integrated circuit ASIC.
  • the substrate 1 with the ASIC contains as the uppermost layer an insulating layer 4, a so-called intermetallic dielectric layer, which has been planarized by chemical mechanical polishing, so that metallic contacts, ie horizontal connecting means 2 and vias 3, are inserted into the intermetallic dielectric layer in this way embedded that there are no significant surface roughness.
  • the connections between the individual metal layers 2 are made by connection vias 3 made of tungsten. These are also known as W-plugs.
  • a barrier layer for example made of titanium nitride, is introduced between the insulating layer 4 and the metal layer 5 described below.
  • this barrier layer is a metal layer 5, preferably made of chromium, the thickness of which is 100 nm or less and which is caused, for example, by Sputtering method is applied.
  • This metal layer is structured in such a way that that this results in back electrodes for individual picture elements (pixels).
  • an intrinsically conductive layer 7 made of amorphous or microcrystalline silicon or its alloys, the thickness of which is typically approximately 0.5 ⁇ m to 2 ⁇ m and which is preferably applied using the PECVD method.
  • a front contact in the form of a conductive transparent oxide layer 9 is located on the p-type layer 8.
  • the material used for this is preferably aluminum-doped zinc oxide, aluminum oxide-doped zinc oxide or else indium-tin oxide.
  • the structure of a Schottky diode in the form of a metal-semiconductor junction on a planarized ASIC surface is realized by the layer sequence metal - chromium / intrinsically conductive amorphous silicon.
  • the alloy of the intrinsically conductive a-Si: H layer 7 made according to the invention with a carbon alloy as specified above leads to spectral profiles in FIG. 4, as shown under curves c, d.
  • the spectral sensitivity within the infrared range (> 680 nm) is significantly lower than that of curve (a), so that such image sensors detect light from the optically visible range, whereas they significantly suppress infrared radiation.
  • the absorption curve for a sensor known from the prior art and equipped with conventional technology, which is used for infrared suppression is shown under curve b in FIG an additional filter (interference filter or colored glass filter) is used.

Abstract

The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-Si:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of the above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs. The invention is characterized in that a component is produced using a material in the intrinsic absorption layer (7) which is modified by an additional hydrocarbon content corresponding to alloy conditions, whereupon photons whose energy is less than the energy gap between two bands are absorbed only in reverse contact of the component which is sealed off from the substrate, as opposed to being absorbed in the first layer.

Description

Optoelektronisches Bauelement Optoelectronic component
Die Erfindung betrifft ein optoelektronisches Bauelement zur Umwandlung elektromagnetischer Strahlung in einen intensitätsabhängigen Fotostrom bestehend aus einem Substrat mit einem mikroelektronischen Schaltkreis, auf dessen Oberfläche eine mit diesem elektrisch kontaktierte erste Schicht aus eigenleitendem amorphen Silizium a-Si:H oder dessen Legierungen angeordnet ist, wobei in Lichteinfallsrichtung der ersten Schicht mindestens eine weitere optisch aktive Schicht vorgeordnet ist, sowie ein Verfahren zu seiner Herstellung.The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent consisting of a substrate with a microelectronic circuit, on the surface of which a first layer of intrinsically conductive amorphous silicon a-Si: H or its alloys which is electrically contacted is arranged, wherein in Light incident direction of the first layer is arranged at least one further optically active layer, and a method for its production.
Bei Bildsensoren, welche für die Aufzeichnung optischer Strahlung aus dem sichtbaren Spektralbereich eingesetzt werden sollen, ist eine Anpassung an die spektrale Empfindlichkeit des menschlichen Auges von großer Bedeutung, um eine farbmetrisch exakte Wiedergabe farbiger Bildinhalte zu erreichen. Dieser sichtbare Spektralbereich liegt zwischen Wellenlängen von 380 nm und etwa 680 nm, wobei der untere Grenzbereich durch den ultravioletten Strahlungsbereich und der obere Bereich durch den Infrarotstrahlungsbereich bestimmt wird. Bei herkömmlichen Bildsensoren tritt jedoch das Problem auf, dass diese aufgrund der Materialeigenschaften des Siliziums über den sichtbaren Bereich hinaus auch im Infrarotbereich eine merkliche Empfindlichkeit besitzen. Daher müssen zur Vermeidung der Verfälschung des Bildsignals durch Infrarotanteile zusätzliche Maßnahmen ergriffen werden. Zum einen ist es bekannt, auf die fotoaktiven Schichten ein pixelweise strukturiertes optisches Farbfiltersystem aufzubringen (US-Patent 3,971,065).In the case of image sensors which are to be used for recording optical radiation from the visible spectral range, an adaptation to the spectral sensitivity of the human eye is of great importance in order to achieve a colorimetrically exact reproduction of colored image contents. This visible spectral range lies between wavelengths of 380 nm and approximately 680 nm, the lower limit range being determined by the ultraviolet radiation range and the upper range by the infrared radiation range. With conventional image sensors, however, the problem arises that, owing to the material properties of the silicon, they also have a noticeable sensitivity in the infrared range beyond the visible range. Therefore, additional measures must be taken to avoid falsification of the image signal by infrared components. On the one hand, it is known to apply an optical color filter system structured pixel by pixel to the photoactive layers (US Pat. No. 3,971,065).
Andererseits ist es bekannt, zur Unterdrückung unerwünschter Infrarotstrahlungen zusätzliche Filter einzusetzen, beispielsweise Interferenzfilter oder Farbglasfilter, die Licht mit einer Wellenlänge von oberhalb ca. 680 nm unterdrücken. Solche Filter haben zum einen den Nachteil, dass sie einen zusätzlichen Aufwand konstruktiver bzw. fertigungstechnischer Art darstellen, beispielsweise wenn sie in das Linsensystem integriert im optischen Strahlengang eines Kamerasystems eingebaut werden, und zum anderen den Nachteil, dass sie auch einen nicht unbeträchtlichen Anteil des Lichtes im gewünschten sichtbaren Spektralbereich absorbieren und somit insgesamt die Sensorempfindlichkeit herabsetzen.On the other hand, it is known to use additional filters to suppress undesired infrared radiation, for example interference filters or colored glass filters, which suppress light with a wavelength above about 680 nm. Such filters have the disadvantage, on the one hand, that they represent an additional outlay of a constructive or production-related nature, for example if they are integrated into the lens system in the optical beam path of a camera system, and, on the other hand, they have the disadvantage that they also represent a not inconsiderable proportion of the light absorb in the desired visible spectral range and thus reduce the overall sensor sensitivity.
Der Erfindung liegt davon ausgehend die Aufgabe zugrunde, ein optoelektronisches Bauelement der eingangs genannten Art dahingehend zu verbessern, dass eine hohe spektrale Empfindlichkeit im sichtbaren Lichtbereich und entsprechend eine hohe Unterdrückung der Empfindlichkeit gegenüber Strahlung im Infrarotbereich ohne zusätzlichen konstruktiven Aufwand erreicht wird.Proceeding from this, the object of the invention is to improve an optoelectronic component of the type mentioned at the outset in such a way that a high spectral sensitivity in the visible light range and correspondingly a high suppression of the sensitivity to radiation in the infrared range are achieved without additional design effort.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, dass die Herstellung der ersten Schicht aus eigenleitendem amorphen Silizium durch Zulegierung von Kohlenstoff in einer Konzentration von 2 bis 15 Atomprozent erfolgt, derart, dass der Bandabstand des Halbleitermaterials in der ersten Schicht mindestens 1,8 eV beträgt. Technologisch wird diese Schicht im PECVD-Verfahren aus Silan (SiH4) und Methan (CH4) hergestellt, wobei das Silan/Methan-Mischungsverhältnis zwischen 2:1 und 1:1 liegt. Daraus ergeben sich Schichten mit einer Kohlenstoff-Konzentration von 2 bis 15 Atomprozent. Des weiteren kann das Silan/Methan-Gasgemisch durch Hinzugabe von Wasserstoff (H2) verdünnt werden zwecks Verbesserung der elektrischen Schichtqualität. Der bevorzugte Wasserstoff-Volumenanteil, bezogen auf das gesamte Gasgemisch, beträgt 75 bis 95 Volumenprozent. Statt Silan und Methan können auch andere Silizium- bzw. Kohlenstoff enthaltende Gase verwendet werden, z.B. Si2H6, C2H2, C2H4, C2H6, oder auch Gase, welche sowohl Silizium als auch Kohlenstoff enthalten, z.B. (SiH3)CH3.This object is achieved according to the invention in that the production of the first layer of intrinsically conductive amorphous silicon is carried out by alloying with carbon in a concentration of 2 to 15 atomic percent such that the band gap of the semiconductor material in the first layer is at least 1.8 eV. Technologically, this layer is produced in the PECVD process from silane (SiH 4 ) and methane (CH 4 ), the silane / methane mixture ratio being between 2: 1 and 1: 1. This results in layers with a carbon concentration of 2 to 15 atomic percent. Furthermore, the silane / methane gas mixture can be diluted by adding hydrogen (H 2 ) in order to improve the electrical layer quality. The preferred hydrogen volume fraction, based on the total gas mixture, is 75 to 95 volume percent. Instead of silane and methane, other gases containing silicon or carbon can also be used, for example Si 2 H6, C 2 H 2 , C 2 H 4 , C 2 H 6 , or also gases which contain both silicon and carbon, for example (SiH 3 ) CH 3 .
Die Erfindung zeichnet sich dadurch aus, dass ein Bauelement realisiert wird, bei dem in der eigenleitenden Absorptionsschicht ein entsprechend den Legierungsbedingungen verändertes Material verwendet wird. Hierdurch wird sichergestellt, dass Photonen mit einer Energie kleiner als der Bandabstand nicht in der ersten Schicht absorbiert werden, sondern erst im Rückkontakt des Bauelements, welcher das Bauelement zum Substrat hin abschließt. An dieser Stelle tragen die Photonen jedoch nicht zur Generation des Fotostroms bei. Hierdurch verfügt das Bauelement über eine merkliche Infrarotunterdrückung und macht somit die bei den nach dem Stand der Technik gefertigten Sensorsystemen unerlässlichen Infrarotsperrfilter überflüssig.The invention is characterized in that a component is realized in which a material changed in accordance with the alloy conditions is used in the intrinsically conductive absorption layer. This ensures that photons with an energy smaller than the band gap are not absorbed in the first layer, but only in the back contact of the component, which closes the component towards the substrate. At this point, however, the photons do not contribute to the generation of the photocurrent. As a result, the component has a noticeable infrared suppression and thus makes the infrared cut-off filters, which are essential in the sensor systems manufactured according to the prior art, superfluous.
In einer ersten Variante der Erfindung ist vorgesehen, dass der mikroelektronische Schaltkreis ein einzelner Halbleitertransistor in jedem Pixel ist. Hierdurch ergibt sich ein sog. TFT-Transistor (Thin-Film-Transistor) . Alternativ kann auch eine Schaltdiode verwendet werden.In a first variant of the invention it is provided that the microelectronic circuit is a single semiconductor transistor in each pixel. This gives a so-called TFT transistor (thin-film transistor). Alternatively, a switching diode can also be used.
Ein solches Bauelement kann auch zur Verwendung im Röntgenstrahlungsbereich eingesetzt werden, indem eine weitere röntgenaktive Szintillationsschicht aufgebracht wird.Such a component can also be used for use in the X-ray radiation area by applying a further X-ray active scintillation layer.
Die bevorzugte Variante der erfindungsgemäßen Lösung ist dadurch gekennzeichnet, dass der mikroelektronische Schaltkreis ein anwendungsspezifischer Schaltkreis (ASIC) ist, wobei die mindestens eine weitere Schicht eine dotierte halbleitende Schicht ist, der inThe preferred variant of the solution according to the invention is characterized in that the microelectronic circuit is an application-specific circuit (ASIC), the at least one further layer being a doped semiconducting layer which
Lichteinfallsrichtung vorgeordnet eine leitfähige Schicht aus einem transparenten Oxid (TCO) ist.A conductive layer made of a transparent oxide (TCO) is arranged upstream of the light incidence direction.
Durch diese Gestaltung wird ein Bauelement in Form eines TFA-Sensors (Thin-Film-on-ASIC) geschaffen, welcher aufgrund der pixelweise und matrixorganisierten Anordnung des strukturierten Halbleiterbauelements einen pixelweise organisierten Bildsensor darstellt. Dabei sind die elektronischen Schaltungen zum Betrieb des Sensors, d.h. die Pixelelektronik, die Peripherieelektronik und die Systemelektronik üblicherweise in CMOS-basierter Siliziumtechnologie realisiert und bilden somit den anwendungsspezifischen integrierten Schaltkreis (ASIC) im Substrat. Durch eine isolierende Schicht hiervon getrennt und mittels entsprechender elektrischer Kontakte hiermit verbunden, befindet sich vertikal auf dem ASIC eine Mehrschichtanordnung als Fotodiode, welche die Umwandlung elektromagnetischer Strahlung in einen intensitätsabhängigen Fotostrom vornimmt. Dieser Fotostrom wird an bestimmten, in jedem Pixel vorhandenen Kontakten der darunter liegenden Pixelelektronik übergeben.This design creates a component in the form of a TFA sensor (thin-film-on-ASIC), which represents a pixel-by-pixel organized image sensor due to the pixel-by-matrix and matrix-organized arrangement of the structured semiconductor component. The electronic circuits for operating the sensor, ie the pixel electronics, the peripheral electronics and the system electronics, are usually implemented in CMOS-based silicon technology and thus form the application-specific integrated circuit (ASIC) in the substrate. Separated from it by an insulating layer and connected to it by means of appropriate electrical contacts, a multilayer arrangement as a photodiode is located vertically on the ASIC, which converts electromagnetic radiation into an intensity-dependent photo current. This photo stream is at certain, existing in each pixel Transfer contacts to the underlying pixel electronics.
Wird die Fotodiode unter Verwendung des durch die oben genannten Spezifikationen definierten Materials hergestellt, ergibt sich ein als Fotodiode ausgebildetes optoelektronisches Konvertierungsmittel in Form eines TFA-Bildsensors mit integrierter Infrarotunterdrückung, wobei es sich entweder um eine Fotodiode mit der Schichtenfolge n-i-p, p-i-n oder um eine Fotodiode in Form einer Schottkydiode handeln kann. Im Falle der p-i- n—oder n-i-p-Struktur wird eine weitere fremdleitende Schicht zwischen die eigenleitende Schicht und die Rückelektrode eingeführt.If the photodiode is produced using the material defined by the above-mentioned specifications, an optoelectronic conversion means in the form of a TFA image sensor with integrated infrared suppression results, which is either a photodiode with the layer sequence nip, pin or a photodiode can act in the form of a Schottky diode. In the case of the p-i-n or n-i-p structure, a further externally conductive layer is introduced between the intrinsically conductive layer and the back electrode.
Weitere bevorzugte Ausführungsformen ergeben sich aus den weiteren Unteransprüchen.Further preferred embodiments result from the further subclaims.
Die Erfindung wird im Folgenden anhand von Zeichnungen näher erläutert. Hierbei zeigenThe invention is explained in more detail below with reference to drawings. Show here
Fig. 1 den Schichtenaufbau eines aus dem Stand der Technik bekannten optoelektronischen Bauelements;1 shows the layer structure of an optoelectronic component known from the prior art;
Fig. 2 den Schichtenaufbau eines weiteren aus dem Stand der Technik bekannten elektronischen Bauelements;2 shows the layer structure of a further electronic component known from the prior art;
Fig. 3 den Schichtenaufbau eines optoelektronischenFig. 3 shows the layer structure of an optoelectronic
Bauelements nach einem Ausführungsbeispiel der Erfindung; Fig. 4 einen Vergleich der spektralen Empfindlichkeiten optoelektronischer Bauelemente, jeweils im Wellenlängenbereich zwischen 350 und 800 nm.Component according to an embodiment of the invention; 4 shows a comparison of the spectral sensitivities of optoelectronic components, in each case in the wavelength range between 350 and 800 nm.
Fig. 1 zeigt ein optoelektronisches Bauelement, wie es nach seinem Schichtaufbau grundsätzlich aus dem Stand der Technik bekannt ist. Hierbei befindet sich auf dem (nicht dargestellten) Substrat zunächst eine Metallschicht. Über dieser angeordnet ist eine eigenleitende Schicht (i) aus amorphen Silizium (a-Si:H), hierüber wiederum eine p- dotierte halbleitende Schicht, und in Lichteinfallsrichtung weiter vorgeordnet eine transparente leitfähige Oxidschicht (TCO) . Das hierdurch gebildete Bauelement wird als „Schottky-Fotodiode" bezeichnet .Fig. 1 shows an optoelectronic component as it is basically known from the prior art after its layer structure. In this case, there is first a metal layer on the substrate (not shown). Arranged above this is an intrinsically conductive layer (i) made of amorphous silicon (a-Si: H), over this again a p-doped semiconducting layer, and a transparent conductive oxide layer (TCO) arranged upstream in the direction of light incidence. The component formed in this way is referred to as a “Schottky photodiode”.
Die eigenleitende Schicht (i) besteht aus amorphem Silizium und weist üblicherweise einen Bandabstand von ca. 1,7 eV auf. Die spektrale Empfindlichkeit eines solchen Bauelements ist in Fig. 4, Kurvenverlauf a dargestellt. Es zeigt sich, dass oberhalb des für das Auge nicht mehr sichtbaren Bereichs von 680 nm (also im Infrarotbereich) noch eine deutliche Empfindlichkeit vorhanden ist, die unerwünscht ist (siehe oben) .The intrinsic layer (i) consists of amorphous silicon and usually has a band gap of approximately 1.7 eV. The spectral sensitivity of such a component is shown in FIG. 4, curve a. It turns out that above the 680 nm range (i.e. in the infrared range) that is no longer visible to the eye, there is still a clear sensitivity that is undesirable (see above).
Fig. 2 zeigt ein zweites optoelektronisches Bauelement, welches eine an sich bekannte sog. p-i-n-Fotodiode darstellt. Gegenüber der in Fig. 1 dargestellten Schichtenfolge weist dieses Element zusätzlich zwischen der Metallkontaktierung zum Substrat und der eigenleitenden a-Si:H-Schicht noch eine n-dotierte Halbleiterschicht auf. Auch bei diesem Bauelement ergibt sich aufgrund des Bandabstands von etwa 1,7 eV im i- Bereich ein spektraler Empfindlichkeitsverlauf etwa entsprechend Fig. 4, Kurve a.2 shows a second optoelectronic component, which represents a so-called pin photodiode known per se. Compared to the layer sequence shown in FIG. 1, this element additionally has an n-doped semiconductor layer between the metal contact to the substrate and the intrinsically conductive a-Si: H layer. This component also has a band gap of about 1.7 eV in the i- Area a spectral sensitivity curve roughly corresponding to FIG. 4, curve a.
Fig. 3 zeigt den Aufbau eines Bildsensors in seiner Realisierung durch Thin-Film-on-ASIC-Technologie.3 shows the structure of an image sensor in its implementation by thin film on ASIC technology.
Das in Fig. 3 dargestellte optoelektronische Bauelement besteht aus einem Substrat 1, d.h. einem Siliziumsubstrat, auf dessen Oberfläche entsprechende integrierte Schaltkreise ausgebildet sind. "Diese integrierten Schaltkreise werden in CMOS-Technologie realisiert, und der somit gebildete Schaltkreis wird als anwendungsspezifischer integrierter Schaltkreis ASIC bezeichnet .The optoelectronic component shown in FIG. 3 consists of a substrate 1, ie a silicon substrate, on the surface of which corresponding integrated circuits are formed. " These integrated circuits are implemented in CMOS technology, and the circuit thus formed is referred to as an application specific integrated circuit ASIC.
Das Substrat 1 mit dem ASIC enthält als oberste Schicht eine isolierende Schicht 4, eine sog. intermetallische Dielektrikumsschicht, welche auf dem Wege des Chemical Mechanical Polishing planariέiert worden ist, so dass metallische Kontaktierungen, d.h. horizontale Verbindungsmittel 2 und Vias 3 derart in die intermetallische Dielektrikumsschicht eingebettet sind, dass keine nennenswerten Oberflächenrauigkeiten entstehen. Die Verbindungen zwischen den einzelnen Metalllagen 2 erfolgen durch Verbindungsvias 3 aus Wolfram. Diese werden auch als W-Plugs bezeichnet. Zwischen der isolierenden Schicht 4 und der im folgenden beschriebenen Metallschicht 5 wird noch eine Barriereschicht, z.B. aus Titan-Nitrid, eingeführt.. Oberhalb dieser Barriereschicht befindet sich eine Metallschicht 5, vorzugsweise aus Chrom, deren Dicke lOOnm oder weniger beträgt und die beispielsweise durch das Verfahren des Sputterns aufgebracht wird. Die Strukturierung dieser Metallschicht erfolgt dahingehend, dass sich hierdurch Rückelektroden für einzelne Bildelemente (Pixel) ergeben. Oberhalb der Metallschicht 5 befindet sich eine eigenleitende Schicht 7 aus amorphem oder mikrokristallinem Silizium oder dessen Legierungen, deren Dicke typischerweise ca. 0,5μm bis 2μm beträgt und die bevorzugt im PECVD-Verfahren aufgebracht wird. Schließlich befindet sich oberhalb der eigenleitenden Schicht 7 eine p-leitende Schicht aus amorphem oder mikrokristallinem Silizium 8 oder dessen Legierungen, deren Dicke typischerweise ca. 5nm bis 20nm beträgt. Auf der p-leitenden Schicht 8 befindet sich ein Frontkontakt in Form einer leitfähigen transparenten Oxidschicht 9. Das hierfür verwendete Material ist bevorzugt Aluminiumdotiertes Zinkoxid, Aluminiumoxid-dotiertes Zinkoxid oder aber auch Indium-Zinn-Oxid.The substrate 1 with the ASIC contains as the uppermost layer an insulating layer 4, a so-called intermetallic dielectric layer, which has been planarized by chemical mechanical polishing, so that metallic contacts, ie horizontal connecting means 2 and vias 3, are inserted into the intermetallic dielectric layer in this way embedded that there are no significant surface roughness. The connections between the individual metal layers 2 are made by connection vias 3 made of tungsten. These are also known as W-plugs. Between the insulating layer 4 and the metal layer 5 described below, a barrier layer, for example made of titanium nitride, is introduced. Above this barrier layer is a metal layer 5, preferably made of chromium, the thickness of which is 100 nm or less and which is caused, for example, by Sputtering method is applied. This metal layer is structured in such a way that that this results in back electrodes for individual picture elements (pixels). Above the metal layer 5 there is an intrinsically conductive layer 7 made of amorphous or microcrystalline silicon or its alloys, the thickness of which is typically approximately 0.5 μm to 2 μm and which is preferably applied using the PECVD method. Finally, there is a p-type layer of amorphous or microcrystalline silicon 8 or its alloys above the intrinsically conductive layer 7, the thickness of which is typically approximately 5 nm to 20 nm. A front contact in the form of a conductive transparent oxide layer 9 is located on the p-type layer 8. The material used for this is preferably aluminum-doped zinc oxide, aluminum oxide-doped zinc oxide or else indium-tin oxide.
Durch die Schichtenfolge Metall - Chrom/eigenleitendes amorphes Silizium wird die Struktur einer Schottkydiode in Form eines Metall-Halbleiterübergangs auf einer planarisierten ASIC-Oberflache realisiert.The structure of a Schottky diode in the form of a metal-semiconductor junction on a planarized ASIC surface is realized by the layer sequence metal - chromium / intrinsically conductive amorphous silicon.
Die gemäß der Erfindung vorgenommene Legierung der eigenleitenden a-Si :H-Schicht 7 mit einer wie oben angegebenen Kohlenstofflegierung führt zu spektralen Verläufen in Fig. 4, wie sie unter den Kurven c, d dargestellt sind. Die spektrale Empfindlichkeit innerhalb des Infrarotbereichs (> 680 nm) ist deutlich gegenüber derjenigen von Kurve (a) herabgesetzt, so dass solche Bildsensoren Licht aus dem optisch sichtbaren Bereich erfassen, wohingegen sie Infrarotstrahlung maßgeblich unterdrücken. Zum Vergleich ist in Fig. 4 unter Kurve b die Absorptionskurve für einen aus dem Stand der Technik bekannten in herkömmlicher Technologie ausgestatteten Sensor dargestellt, welcher zur Infrarotunterdrückung einen zusätzlichen Filter (Interferenzfilter oder Farbglasfilter) verwendet. The alloy of the intrinsically conductive a-Si: H layer 7 made according to the invention with a carbon alloy as specified above leads to spectral profiles in FIG. 4, as shown under curves c, d. The spectral sensitivity within the infrared range (> 680 nm) is significantly lower than that of curve (a), so that such image sensors detect light from the optically visible range, whereas they significantly suppress infrared radiation. For comparison, the absorption curve for a sensor known from the prior art and equipped with conventional technology, which is used for infrared suppression, is shown under curve b in FIG an additional filter (interference filter or colored glass filter) is used.

Claims

P A T E N T AN S P R Ü C H E PATENT TO SPEECH
1. Optoelektronisches Bauelement zur Umwandlung elektromagnetischer Strahlung in einen intensitätsabhängigen Fotostrom bestehend aus einem Substrat (1) mit einem mikroelektronischen Schaltkreis, auf dessen Oberfläche eine mit diesem elektrisch kontaktierte erste Schicht (7) aus eigenleitendem amorphen Silizium (a-Si:H) oder dessen Legierungen angeordnet ist, wobei in Lichteinfallsrichtung der ersten Schicht (7) mindestens eine weitere optisch aktive Schicht (8) vorgeordnet ist, dadurch gekennzeichnet, dass die Herstellung der ersten Schicht (7) aus eigenleitendem amorphen Silizium durch Zulegierung von Kohlenstoff in einer Konzentration von 2 bis 15 Atomprozent erfolgt, derart, dass der Bandabstand des Halbleitermaterials in der ersten Schicht (7) mindestens 1,8 eV beträgt.1. Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photo current consisting of a substrate (1) with a microelectronic circuit, on the surface of which a first layer (7) made of intrinsically conductive amorphous silicon (a-Si: H) or its electrically contacted Alloys are arranged, at least one further optically active layer (8) being arranged upstream of the first layer (7) in the direction of light incidence, characterized in that the production of the first layer (7) from intrinsically conductive amorphous silicon by alloying with carbon in a concentration of 2 up to 15 atomic percent occurs in such a way that the band gap of the semiconductor material in the first layer (7) is at least 1.8 eV.
2. Optoelektronisches Bauelement nach Anspruch 1 dadurch gekennzeichnet, dass der mikroelektronische Schaltkreis ein einzelner Halbleitertransistor oder eine Schaltdiode ist.2. Optoelectronic component according to claim 1, characterized in that the microelectronic circuit is a single semiconductor transistor or a switching diode.
3. Optoelektronisches Bauelement nach Anspruch 2 dadurch gekennzeichnet, dass eine weitere Schicht in Form einer röntgenaktiven Szintillationsschicht in Lichteinfallsrichtung vorgelagert ist. 3. Optoelectronic component according to claim 2, characterized in that a further layer in the form of an X-ray active scintillation layer is arranged upstream in the direction of light incidence.
. Optoelektronisches Bauelement nach Anspruch 1, wobei es sich um eine pixelweise strukturierte, matrixorganisierte Bildsensoreinrichtung handelt, dadurch gekennzeichnet, dass der mikroelektronische Schaltkreis ein anwendungsspezifischer Schaltkreis (ASIC) ist, wobei die mindestens eine weitere Schicht (8) eine dotierte halbleitende Schicht ist, der in Lichteinfallsrichtung vorgeordnet eine leitfähige Schicht (9) aus einem transparenten Oxid (TCO) ist., Optoelectronic component according to claim 1, wherein it is a pixel-wise structured, matrix-organized image sensor device, characterized in that the microelectronic circuit is an application-specific circuit (ASIC), wherein the at least one further layer (8) is a doped semiconducting layer, which in A conductive layer (9) made of a transparent oxide (TCO) is arranged upstream of the light incidence direction.
5. Optoelektronisches Bauelement nach Anspruch 4 dadurch gekennzeichnet, dass in Lichteinfallsrichtung der ersten Schicht (7) nachgeordnet eine zweite dotierte halbleitende Schicht angeordnet ist, wobei die Schichtenfolge der so gebildeten Fotodiode p-i-n oder n-i-p ist.5. Optoelectronic component according to claim 4, characterized in that a second doped semiconducting layer is arranged downstream of the first layer (7) in the direction of light incidence, the layer sequence of the photodiode thus formed being p-i-n or n-i-p.
6. Optoelektronisches Bauelement nach Anspruch 1 oder 4 dadurch gekennzeichnet, dass es als eine Schottky-Fotodiode ausgebildet ist.6. Optoelectronic component according to claim 1 or 4, characterized in that it is designed as a Schottky photodiode.
7. Verfahren zur Herstellung eines elektronischen Bauelements zur Umwandlung elektromagnetischer Strahlung in einen intensitätsabhängigen Fotostrom, bei dem auf einem einen mikroelektronischen Schaltkreis enthaltenden Substrat (1) eine elektrisch mit dem Schaltkreis kontaktierte erste Schicht (7) aus amorphen Silizium a-Si:H oder dessen Legierungen aufgebracht wird, auf der wiederum mindestens eine weitere optisch aktive Schicht (8) angeordnet ist, dadurch gekennzeichnet, dass die Herstellung der ersten Schicht (7) aus eigenleitendem amorphen Silizium durch Zulegierung von Kohlenstoff unter Verwendung eines Silan (SiH)/ Methan (CH) -Gasgemisches im Volumenverhältnis 2:1 bis 1:1 erfolgt, derart, dass der Bandabstand des Halbleitermaterials in der ersten Schicht (7) mindestens 1,8 eV beträgt.7. A method for producing an electronic component for converting electromagnetic radiation into an intensity-dependent photo current, in which, on a substrate (1) containing a microelectronic circuit, a first layer (7) made of amorphous silicon a-Si: H or the like, which is electrically contacted with the circuit Alloys is applied, on which in turn at least one further optically active layer (8) is arranged, characterized in that the production of the first layer (7) of intrinsically conductive amorphous silicon by alloying carbon using a silane (SiH) / methane (CH) gas mixture in a volume ratio of 2: 1 to 1: 1, such that the band gap of the semiconductor material in the first layer (7) is at least 1.8 eV.
8. Verfahren zur Herstellung eines elektronischen Bauelements nach Anspruch 7, dadurch gekennzeichnet, dass zusätzlich eine Beimengung von Wasserstoff (H2) in einer Konzentration von 75 bis 95 Volumenprozent erfolgt, bezogen auf den gesamten Gasfluss (Silan + Methan + Wasserstoff) .8. The method for producing an electronic component according to claim 7, characterized in that an admixture of hydrogen (H 2 ) is additionally carried out in a concentration of 75 to 95 percent by volume, based on the total gas flow (silane + methane + hydrogen).
9. Verfahren zur Herstellung eines elektronischen Bauelements nach einem der beiden vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Bandabstand der eigenleitenden amorphen9. A method for producing an electronic component according to one of the two preceding claims, characterized in that the bandgap of the intrinsically conductive amorphous
Siliziumschicht im Bereich von 1,8 bis 2,0 eV liegt.Silicon layer is in the range of 1.8 to 2.0 eV.
10. Verfahren zur Herstellung eines elektronischen Bauelements nach einem der drei vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Silan/Methan-Mischungsverhältnis während der Deposition 1,7:1 bis 1:1, vorzugsweise 1,67:1 beträgt . 10. The method for producing an electronic component according to one of the three preceding claims, characterized in that the silane / methane mixture ratio during the deposition is 1.7: 1 to 1: 1, preferably 1.67: 1.
1. Verfahren zur Herstellung eines elektronischen Bauelements nach Anspruch 7, dadurch gekennzeichnet, dass die Schicht aus amorphen Silizium mittels des PECVD- Verfahrens (PECVD = Plasma Enhanced Chemical Vapor Deposition) aus Silan (SiH ) und gegebenenfalls weiteren Gasen aufgebracht wird. 1. A method for producing an electronic component according to claim 7, characterized in that the layer of amorphous silicon is applied by means of the PECVD method (PECVD = Plasma Enhanced Chemical Vapor Deposition) made of silane (SiH) and optionally further gases.
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