EP1346416A2 - Dispositif photovolta que formant vitrage - Google Patents
Dispositif photovolta que formant vitrageInfo
- Publication number
- EP1346416A2 EP1346416A2 EP01984889A EP01984889A EP1346416A2 EP 1346416 A2 EP1346416 A2 EP 1346416A2 EP 01984889 A EP01984889 A EP 01984889A EP 01984889 A EP01984889 A EP 01984889A EP 1346416 A2 EP1346416 A2 EP 1346416A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- installation according
- installation
- substrate
- insulation
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 claims abstract description 71
- 238000009434 installation Methods 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000002356 single layer Substances 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000746 Structural steel Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011022 opal Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000008685 targeting Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 239000005338 frosted glass Substances 0.000 claims description 2
- 230000013011 mating Effects 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000254 damaging effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 210000000056 organ Anatomy 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000035622 drinking Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the invention relates to a photovoltaic device, to the use of such a device as glazing, to a process for manufacturing such a device, to an installation for implementing this process, to a process control of a transparent photovoltaic device as well as an installation for the implementation of this control process.
- the present invention relates to a photovoltaic device in which several unitary photovoltaic cells of p-i-n type are arranged in parallel on a substrate, said cells being electrically connected in series.
- the substrate is a tinted glass plate intended to be used for the exterior glazing of architectural buildings.
- tinted glass plates are used in a very important way in the construction of office buildings, schools, hospitals and other buildings to attenuate the dazzling light, to ensure the absorption of part of the heat. radiated by the sun and thus lower the operating costs of air conditioning.
- glazing glass surfaces surround the entire building and they could, due to their exposure to solar radiation, constitute an important source of electrical energy if they were fitted with a photovoltaic device.
- the light which leaves a unitary photovoltaic cell without contributing to the photovoltaic action can be absorbed in a following photovoltaic cell so as to improve the total photovoltaic efficiency of the device.
- Such devices are therefore difficult to envisage for being placed on a glass substrate intended for the glazing of a building in that it must have sufficient transparency in the context of its use.
- the last cell receives fewer photons than the first so that its efficiency is not optimal.
- the invention therefore aims to remedy these drawbacks by proposing in particular a photovoltaic device which is sufficiently transparent to be used as glazing glass.
- the invention provides a photovoltaic device comprising a plurality of p-in type photovoltaic cells disposed on a substrate, in which said cells are arranged, in the form of a monolayer, parallel the to each other and in that a layer of electrical conductor is disposed between layer n and layer p of each consecutive cell so as to electrically connect said cells in series.
- the device is transparent to light radiation.
- the invention proposes the use of such a device as glazing for architectural buildings, in which the substrate is formed by the glazing.
- the photovoltaic cells cover substantially the entire surface of the glazing so as to increase the amount of current generated per square meter of glazing.
- the invention provides a method of manufacturing a device as described above, in which the different layers are deposited using a chemical vapor deposition technique.
- the different layers are deposited using: - a first mask, the openings of which correspond to the layers of electrical conductor;
- the first, second, third and fourth masks are used successively.
- the invention provides an installation for implementing the method described above, said installation comprising a useful space in which the substrate is arranged, a chamber which surrounds the useful space, heating means, insulation of the usable space and a cooling enclosure.
- the invention provides a method of optical control of a transparent device as described above, in which we observe on successive narrow bands, along one or more segments of a determined line covering the desired examination width, the image of the device projected by transparency on a very close screen which re-diffuses it, by illuminating the device only on an area which is itself narrow covering said segments of the reading line.
- the invention proposes an installation for the implementation of such a control method, said installation further comprising organs for presenting the device:
- Figure 1 partially shows, in rear perspective and schematically, a photovoltaic device comprising several unitary photovoltaic cells arranged in parallel on a glass substrate.
- FIG. 2 partially shows, in section and schematically, the photovoltaic device of FIG. 1.
- a photovoltaic device 1 comprising several unitary photovoltaic cells 2 arranged in parallel on a substrate 3 formed from a first glass plate.
- Each photovoltaic cell 2 comprises a p-i-n type semiconductor junction in which an optically active layer of type i 4 is surrounded by respectively a layer of p type semiconductor 5 and a layer of n type 6 semiconductor.
- the layer i is represented in the figures in an enlarged and exploded manner but must be seen as being arranged between the layers n and p 6, 5.
- the photovoltaic device 1 therefore makes it possible to convert the light energy emitted by the sun into electricity and the efficiency of this conversion corresponds to the amount of current obtained for a given light flux.
- the layers p, i and n 5, 4, 6 of a photovoltaic cell 2 are arranged in parallel on the substrate 3 in the form of a monolayer so that the photovoltaic action of each of the cells 2 is generated by the incident light .
- This arrangement makes it possible to increase the photovoltaic yield since the optically active layer 4 of each photovoltaic cell 2 is subjected to incident solar radiation without part of it having been absorbed by another layer of cell 2 or by another cell 2 of device 1.
- the number of photocarriers generated by the type i layer 4 of each photovoltaic cell 2 of the device 1 is optimal and therefore the total photovoltaic yield of the device 1 increases.
- this embodiment makes it possible to obtain a photovoltaic device 1 which is transparent enough to be used as glazing for architectural buildings.
- a photovoltaic cell 2 comprising gallium as a layer of type i 4 and a pn homojunction 5, 6 formed of gallium arsenide gave good results in terms total photovoltaic efficiency and electrical output voltage.
- the p doping of gallium arsenide can be carried out by incorporating therein on the order of 10 atomic% of carbon and the n doping by incorporating in it on the order of 10 atomic% of nitrogen.
- the materials used when deposited in a thin layer, have sufficient transparency to be able to use the device as glazing.
- the thickness of the layers p, i and n 5, 4, 6 can be of the order of 25 A.
- the photovoltaic efficiency of device 1 does not drop significantly when it is subjected to intense light radiation for a long period of time. This characteristic is obtained thanks to the weak aging of gallium under the effect of photons.
- the photovoltaic cells 2 are electrically connected in series by conductors 7 deposited in thin layers on the substrate 3, between each of them.
- the electrical conductors 7 are formed from a copper layer of substantially the same thickness as the layers p, i and n, said layer being in contact respectively with the layer p 5 and the layer n 6 of two cells. 2 consecutive.
- the photovoltaic device 1 comprises connection means 8 with an external circuit so as to collect the current generated.
- the connection means 8 are arranged on the substrate 3, for example by etching, and in contact with the electrical conductors 7 of the extreme photovoltaic cells 2 of the device 1.
- a second glass plate 9 for example identical to the first, is arranged on the device 1 and in contact with the photovoltaic cells 2 so as to protect them.
- the incident light (see the arrow in FIG. 2) is transmitted via the second glass plate 9 to all the layers of type i 4 of the different unit cells 2 so as to create photocarriers which, under the action of the electric junction field, generate current in all of the cells 2 connected in series, the current is then recovered in the external circuit via the connection means 8, then the light is transmitted through the device 1 (see the arrow in FIG. 2), that is towards the interior of the building in the context of use as glazing, via the substrate 3.
- another advantage of the device 1 is that, in addition to the production of electrical energy, it makes it possible to absorb caloric energy by Peltier effect and, by the same token, to further decrease the operating costs of the air conditioning of the buildings on which it is placed.
- the method for obtaining a photovoltaic device 1 according to the invention is described below.
- the cells 2 can be produced simultaneously with their electrical circuit 7 so that the completed device 1 is ready to be installed.
- the photovoltaic cells 2 as well as the electrical conductors 7 are produced in the form of thin films which are applied, in particular by chemical vapor deposition (CVD), directly on the first glass plate 3.
- CVD chemical vapor deposition
- glass Because of its excellent surface condition and other properties, glass is the best support for the application of thin films. It is an insulator, it resists corrosion and weathering and its low coefficient of expansion reduces the risk of fracturing of the films which are bound on its surface and, when heated, the melting point of the glass corresponds closely to the melting points of the other active materials which constitute the photovoltaic cells 2.
- the cells 2 can be deposited on a substrate 3 other than glass, for example a metal polished or formed of glass fibers, as a specific substrate usable for other applications .
- a particular technique which is simple to implement is a plasma spraying process, for example by high-frequency heating of the materials constituting the cells 3 and the conductors 7, in the presence of a hydrogen-free atmosphere.
- masks are used which are arranged on the substrate 3 so as to deposit the gaseous compound at or at the desired locations and then dissociated from it after this deposition.
- the masks can be either semi-permanent in metal, carbon or plastic, or disposable after use and in impregnated paper or plastic.
- the disposable mask has the advantage of being clean for each application.
- Semi-permanent masks can be made of metallic or plastic materials impregnated with carbon or graphite provided that the materials to be deposited do not adhere to little or little on them.
- the masks to be discarded after use can be made of paper, the openings being cut or punched in a roll of paper which is continuously unwound or in individual sheets cut to the dimensions of the substrate.
- these masks can be coated with an adhesive adhesive by pressure so as to be able to temporarily associate them with the substrate 3 for the production of the deposit.
- the adhesive can be arranged in the form of dots, the number and arrangement of which are arranged to allow association without damaging the substrate 3.
- Disposable masks have the advantage of allowing product inspection between the application of the different layers since a different mask is used for the deposition of each layer.
- the choice of the material forming the mask must be made so that it does not deteriorate or deform under the effect of temperature.
- the first step in the process for obtaining the photovoltaic device 1 is the preparation of the glass plate as a substrate 3.
- the glass plate is cut to the desired dimensions, the edges are deburred and passive, after cleaning, at least the surface to receive the cells 2, for example with an aluminum oxide.
- a first mask the openings of which correspond to the layers of electrical conductors 7, said mask is placed on the glass plate, then the copper is deposited by CVD, for example with a thickness of the order of 25 ⁇ ;
- n type gallium arsenide is deposited by CVD, for example with a thickness of the order of 25 ⁇ ;
- a third mask the openings of which correspond to the p-type layers 5, the said mask is placed on the glass plate, then the p-type gallium arsenide is deposited by CVD, for example with a thickness of the order of 25 AT ;
- a fourth mask the openings of which correspond to the layers of type i 4, said mask is placed on the glass plate, then the gallium is deposited by CVD, for example with a thickness of the order of 25 ⁇ .
- connection means 8 can then be arranged, then the second glass plate 9 so as to obtain a photovoltaic device 1 forming glazing glass which is ready to be mounted in architectural buildings.
- This type of installation typically includes a useful space in which the substrate 3 is disposed, a chamber which surrounds the useful space, heating means, insulation of the useful space and a cooling enclosure.
- the transfer of heat from the useful space to the wall of the enclosure takes place in principle by thermal conduction, convection and radiation.
- the heat transfer takes place only by radiation and by thermal conduction of solid components and, when the pressure increases, the heat transport increases towards the wall of the enclosure.
- Damaging effects such as an exaggerated temperature of the wall of the enclosure having the effect of limiting the longevity and reliability of the installation or an excessively high energy consumption or even an insufficient homogeneity of the temperature in the useful space, appear if this heat transport is neither controlled nor reduced.
- the insulation of the useful space is constituted by hard felt plates with gas-impermeable graphite sheet veneer arranged on the side walls, the upper covering wall and the front walls, as the upper edges and the seals are covered with profiles in the form of a graphite angle iron reinforced with carbon fibers, so as to obtain a seal against the passage of gases, while the lower edges are open to allow the evacuation of said gases;
- the sections in the form of angle iron are arranged in repeated alternation between the sheets of hard felt so as to thus create a seal of the labyrinth type; 5) the front edges of the insulation of the useful space and / or the mating surfaces are embedded in graphite profiles reinforced with carbon fibers;
- partitions are arranged, as anti-convection barriers, between the insulation of the useful space and the insulation of the wall of the enclosure;
- the partitions are made of metallic material, in the form of sheets and / or sheets;
- the additional water cooling is arranged in the upper half of the enclosure, in the region of the flange and of the cover.
- the first and second characteristics have the effect of creating a sharp drop in temperature at the level of the interior wall of the enclosure so as to be able to maintain a low temperature at this location.
- the insulation is improved in particularly critical locations.
- the useful space has a polygonal section, at the junction between two walls. Indeed, these junctions have residual gaps which, in the installations of the prior art, increase over time and can therefore be the cause of faulty insulation.
- Carbon fiber-reinforced graphite materials achievable according to any desired profile, are however available.
- the partitions described in 6) and 7) prevent convection and thus reduce the transfer of heat from the insulation of the useful space to the wall of the enclosure, or to the insulation of the wall of the enclosure.
- the characteristics 8) and 9) have the effect of reducing, by improving the evacuation of heat, the temperatures of the enclosure in the region of the flange and of the cover.
- a method of optical control of a transparent photovoltaic device 1 is described below.
- transparent we designate a device 1 through which light can pass while letting appear with sufficient clarity the objects which are behind.
- Modern control methods analyze electronically, step by step, the fluctuations of a signal retransmitted by the body from a suitable light source. They are very particularly used for the control of articles having at least partial axial symmetry, in particular of glass articles, such as bottles or drinking glasses, or even of plastic material.
- a synthesis is then carried out, according to all kinds of criteria intended to reveal the position, the extent and above all the intensity of each defect but, as a general rule, neither the mode of analysis nor the mode of synthesis chosen. do not depend directly on the observation mode. In this case, they are external to the object of the process and will therefore not be described below.
- a simplification consists in illuminating the entire region and in inspecting by placing the device 1 in front of a permanent source of possibly modulated light, whether it is a concentrated source or a simple bright background. We can still operate by rotation on a lap, or only at the parade but under several complementary angles, ultimately under one. This gives a more summary but quicker analysis, which is sufficient in many cases.
- the method of the invention is inspired by this method while allowing a fine analysis of the device to be checked. It consists in observing on successive narrow bands, along one or more segments of a determined line covering the desired examination width, the image of the device 1 projected by transparency on a very close screen which re-diffuses it, in illuminating the device 1 only on a itself narrow area covering said segments of the reading line.
- a directed beam having, at least transversely, a small aperture will preferably be used to illuminate the various segments of the inspection area.
- the image formed on the screen will almost inevitably be observed by the “rear” face of the latter, namely, that which is not turned towards the device 1, that is to say through this screen.
- an installation intended for the implementation of the control process optics will therefore include, at a fixed station or if necessary on a follower assembly:
- a linear camera receiver targeting the screen from its rear face
- a fixed light emitter disposed beyond the location of the device 1, to illuminate on the screen, in a sufficiently homogeneous manner, a narrow area covering the chosen examination segment (s), this preferably by forming a beam spread out but not very thick, operating by transparency.
- the presentation and a priori rotating members are usually associated with a horizontal reference plate, and all of the optical organs of the device will be arranged along the same plane of symmetry of the post, perpendicular to the path of crossing thereof, aiming for an examination line in principle fairly close to a meridian.
- This plane will therefore be a vertical plane passing through the axis of the machine.
- a receiver comprising a camera combining a conventional objective and a photosensitive member consisting of a simple rectilinear strip of diodes is suitable for observing with the desired sharpness the image provided by all of the regions to be examined.
- a deflection mirror making it possible to orient it so as to be able to place it at the desired observation distance to cover the entire height to be checked without creating excessive lateral bulk. It is also possible to use a fiber optic light guide.
- the screen may consist only of a flat translucent plate, narrow, formed of a sheet of opal material or frosted glass on its front face, but, if necessary, it may also include a juxtaposition of facets oriented according to a in principle prismatic arrangement along the profile of the trajectory considered. As a variant, it may have a curved surface, namely that of a cross section or at least slightly oblique of a cylinder with an axis perpendicular to the plane of symmetry. Thus, it will follow the shape of the device 1, at a distance of, for example, between 1 to 3 centimeters. This distance remains sufficiently constant without however that an excessive sinuosity creates difficulties, either of construction or still of observation of the device as for the angles of illumination or aiming if not with the depth of field.
- the transmitter it can sometimes be enough for a simple concentrated light source, diaphragmed by a slit which creates a thin beam.
- a projector can also be used using a point or linear source optical system, emitting a narrow beam, in principle diaphragmed into a flat beam so as to illuminate the selected examination segments passing through the axis of symmetry of the device. 1 or at least in its vicinity.
- a sufficiently uniform luminous flux it is possible to combine several of these projectors, each illuminating its own section at an adjustable intensity, with possible overlapping of the successive lighting ranges, to generate a uniform light field or even correct the influence of the deviations angular.
- This transmitter can also be equipped with an optical deflection system.
- the positions of the members may deviate from the aforementioned symmetry with respect to a main section, receiver and transmitter adjustable and developed on the screen according to neighboring but different means of observation and illumination, both in principle parallel to the axis of the device 1 in the control position or slightly inclined on it.
- a first and a second embodiment of the installation are described below for the implementation of the method of optical control of a transparent device 1.
- the device 1 is mounted on a machine of the conventional type, the device 1 resting on a horizontal plate so that its axis is vertical. It is driven by a star wheel carrying rollers which allow an external counter-roller to rotate it at the control station. This is a common arrangement, chosen for convenience and which need not be described in detail.
- the screen is formed of a narrow and thin plate of opal plastic material, translucent, curved, cylindrical, and arranged transversely to the plane of symmetry, along the main generator or external meridian of the device 1 in the control position, without actually following its curvature exactly.
- the receiver includes a camera, the objective of which is placed in front of a rectilinear strip of photosensitive diodes connected to a preamplifier.
- This set is inside a housing carrying a deflection mirror which, turned towards the rear face of the screen, allows the lens to be vertically oriented to reduce the horizontal dimensions and to put it in the point on the screen.
- the emitter is formed by a simple lamp provided with a reflector and placed towards the interior of the machine, under the reference stage, where a rectilinear slit diaphragm its light in a thin beam forming on the screen, straddling the median plane, a luminous zone which covers the examination segment.
- the translucent screen is formed of a flat glass plate, frosted on its front face, facing the device 1, fairly close to the corresponding main generator.
- the receiver and the transmitter are placed side by side above the path of the device 1.
- the receiver similar to that of the first embodiment, has its camera directed from top to bottom towards a deflection mirror inclined at approximately 40 ° from the vertical in a very slightly oblique transverse arrangement, which makes it possible to focus it on screen along the nearest generator with proper orientation of the diode array.
- the transmitter comprises a projector directed from top to bottom towards a narrow deflection mirror which is also slightly offset, and inclined at about 40 ° vertically so as to fold the beam illuminating the screen in a slightly dipping direction.
- this arrangement allows the projector to be moved at a sufficient distance without excessive horizontal congestion.
- a slot is made in the plate to allow the passage of light rays
- the projector of conventional structure, has a lamp and a capacitor formed by two lenses, commonly associated with a concave mirror, to form the image of its filament at a short distance, the light being taken up by a lens.
- the mirror As the source is not point-like, the mirror, despite its shape, would only imperfectly diaphragm the beam emitted by the projector into a flat beam. This is why it is advisable to set the objective on a field diaphragm carrying a slit, for example 0.7 mm by 15 mm, placed in the vicinity of the image but slightly defocused so that it forms in the region of the screen, in the absence of device 1 to be controlled, a narrow rectangular image, fifteen to twenty times larger, of practically uniform brightness.
- a field diaphragm carrying a slit for example 0.7 mm by 15 mm
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0016693A FR2818442B1 (fr) | 2000-12-20 | 2000-12-20 | Dispositif photovoltaique formant vitrage |
FR0016693 | 2000-12-20 | ||
PCT/EP2001/015382 WO2002050913A2 (fr) | 2000-12-20 | 2001-12-20 | Dispositif photovoltaïque formant vitrage |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1346416A2 true EP1346416A2 (fr) | 2003-09-24 |
Family
ID=8857946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01984889A Withdrawn EP1346416A2 (fr) | 2000-12-20 | 2001-12-20 | Dispositif photovolta que formant vitrage |
Country Status (9)
Country | Link |
---|---|
US (2) | US7439600B2 (xx) |
EP (1) | EP1346416A2 (xx) |
JP (2) | JP2004516668A (xx) |
CN (1) | CN1423839A (xx) |
AU (1) | AU2002233296A1 (xx) |
BR (1) | BR0108509A (xx) |
FR (1) | FR2818442B1 (xx) |
IL (2) | IL151343A0 (xx) |
WO (1) | WO2002050913A2 (xx) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110079011A1 (en) * | 2009-10-01 | 2011-04-07 | Anthony Sabo | Electro-repulsive vacuum glazing |
US8647910B2 (en) | 2010-02-05 | 2014-02-11 | E. I. Du Pont De Nemours And Company | Masking pastes and processes for manufacturing a partially transparent thin-film photovoltaic panel |
US9695629B2 (en) * | 2012-08-07 | 2017-07-04 | Ecole Polytechnique Federale De Lausanne (Epfl) | Glazing with embedded microstructures for daylighting and seasonal thermal control |
CN104176134A (zh) * | 2014-08-13 | 2014-12-03 | 厦门鸿基伟业复材科技有限公司 | 一种碳纤维复合材料汽车车架结构 |
US9728440B2 (en) | 2014-10-28 | 2017-08-08 | Globalfoundries Inc. | Non-transparent microelectronic grade glass as a substrate, temporary carrier or wafer |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3987301A (en) * | 1973-06-27 | 1976-10-19 | Talcoma Teoranta | Light collection apparatus |
EP0016551A1 (en) * | 1979-02-26 | 1980-10-01 | Udaras Na Gaeltachta | Apparatus for inspecting translucent articles for faults |
FR2454595A1 (fr) * | 1979-04-19 | 1980-11-14 | Autoclave Eng Inc | Appareil pour chauffer une piece a haute temperature aussi bien sous vide que sous pression |
US4398702A (en) * | 1982-03-22 | 1983-08-16 | Ultra-Temp Corporation | Metallurgical furnace |
EP0186278A2 (en) * | 1984-12-27 | 1986-07-02 | Owens-Brockway Glass Container Inc. | Detecting defects in transparent articles |
FR2601119A1 (fr) * | 1986-07-01 | 1988-01-08 | Pfeiffer Vakuumtechnik | Installation pour le traitement thermique de materiaux sous vide et sous pression du type four de frittage |
EP0255437A2 (fr) * | 1986-07-28 | 1988-02-03 | Saint-Gobain Cinematique Et Controle | Contrôle de corps transparents |
WO1996017106A1 (en) * | 1994-11-28 | 1996-06-06 | Mikrokemia Oy | Apparatus for growing thin films |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
US4461922A (en) * | 1983-02-14 | 1984-07-24 | Atlantic Richfield Company | Solar cell module |
AU594359B2 (en) * | 1985-08-24 | 1990-03-08 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same |
US4865999A (en) * | 1987-07-08 | 1989-09-12 | Glasstech Solar, Inc. | Solar cell fabrication method |
JPH02177374A (ja) * | 1988-12-27 | 1990-07-10 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
US6162298A (en) * | 1998-10-28 | 2000-12-19 | The B. F. Goodrich Company | Sealed reactant gas inlet for a CVI/CVD furnace |
-
2000
- 2000-12-20 FR FR0016693A patent/FR2818442B1/fr not_active Expired - Fee Related
-
2001
- 2001-12-20 WO PCT/EP2001/015382 patent/WO2002050913A2/fr active Application Filing
- 2001-12-20 IL IL15134301A patent/IL151343A0/xx active IP Right Grant
- 2001-12-20 US US10/525,522 patent/US7439600B2/en not_active Expired - Fee Related
- 2001-12-20 BR BR0108509-3A patent/BR0108509A/pt not_active Application Discontinuation
- 2001-12-20 JP JP2002551916A patent/JP2004516668A/ja not_active Withdrawn
- 2001-12-20 EP EP01984889A patent/EP1346416A2/fr not_active Withdrawn
- 2001-12-20 AU AU2002233296A patent/AU2002233296A1/en not_active Abandoned
- 2001-12-20 CN CN01805305A patent/CN1423839A/zh active Pending
-
2002
- 2002-08-19 IL IL151343A patent/IL151343A/en not_active IP Right Cessation
-
2008
- 2008-03-31 US US12/058,991 patent/US20080178808A1/en not_active Abandoned
-
2010
- 2010-03-10 JP JP2010053768A patent/JP2010157762A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3987301A (en) * | 1973-06-27 | 1976-10-19 | Talcoma Teoranta | Light collection apparatus |
EP0016551A1 (en) * | 1979-02-26 | 1980-10-01 | Udaras Na Gaeltachta | Apparatus for inspecting translucent articles for faults |
FR2454595A1 (fr) * | 1979-04-19 | 1980-11-14 | Autoclave Eng Inc | Appareil pour chauffer une piece a haute temperature aussi bien sous vide que sous pression |
US4398702A (en) * | 1982-03-22 | 1983-08-16 | Ultra-Temp Corporation | Metallurgical furnace |
EP0186278A2 (en) * | 1984-12-27 | 1986-07-02 | Owens-Brockway Glass Container Inc. | Detecting defects in transparent articles |
FR2601119A1 (fr) * | 1986-07-01 | 1988-01-08 | Pfeiffer Vakuumtechnik | Installation pour le traitement thermique de materiaux sous vide et sous pression du type four de frittage |
EP0255437A2 (fr) * | 1986-07-28 | 1988-02-03 | Saint-Gobain Cinematique Et Controle | Contrôle de corps transparents |
WO1996017106A1 (en) * | 1994-11-28 | 1996-06-06 | Mikrokemia Oy | Apparatus for growing thin films |
Non-Patent Citations (1)
Title |
---|
See also references of WO0250913A2 * |
Also Published As
Publication number | Publication date |
---|---|
JP2010157762A (ja) | 2010-07-15 |
WO2002050913A3 (fr) | 2002-12-27 |
FR2818442B1 (fr) | 2003-10-17 |
WO2002050913A2 (fr) | 2002-06-27 |
BR0108509A (pt) | 2002-12-17 |
US20060138606A1 (en) | 2006-06-29 |
IL151343A (en) | 2008-11-26 |
AU2002233296A1 (en) | 2002-07-01 |
CN1423839A (zh) | 2003-06-11 |
FR2818442A1 (fr) | 2002-06-21 |
JP2004516668A (ja) | 2004-06-03 |
US7439600B2 (en) | 2008-10-21 |
IL151343A0 (en) | 2003-04-10 |
US20080178808A1 (en) | 2008-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2550007A1 (en) | Method for producing a semiconducting film and photovoltaic device obtained by the method | |
US5599403A (en) | Semiconductor device containing microcrystalline germanium & method for producing the same | |
EP2786105B1 (fr) | Detecteur infrarouge a base de micro-planches bolometriques suspendues | |
FR2490016A1 (fr) | Procede pour fabriquer un alliage amorphe photosensible, alliage obtenu par ce procede et dispositif de mise en oeuvre | |
EP0770268A1 (fr) | Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obtenu et photopile comprenant un tel materiau ou dispositif | |
FR2522880A1 (fr) | Dispositif photovoltaique comprenant des moyens permettant de diriger les radiations incidentes en vue d'une reflexion interne totale | |
FR2746960A1 (fr) | Diminution de l'epaisseur par la face arriere en utilisant l'usinage par faisceau d'ions | |
FR2701786A1 (fr) | Cellule photovoltaïque, son procédé de réalisation et panneau solaire comportant de telles cellules. | |
EP2353184B1 (fr) | Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module | |
EP2466283A1 (fr) | Détecteur infrarouge à base de micro-planches bolométriques suspendues | |
FR2638900A1 (fr) | Dispositif photovoltaique a empilement, comportant une couche anti-reflexion | |
FR3053657A1 (fr) | Ballon dirigeable equipe d'un generateur solaire compact a concentration locale utilisant des lignes de cellules solaires bifaciales | |
FR2490018A1 (fr) | Procede et dispositif pour etalonner les intervalles de bande d'alliages semi-conducteurs amorphes et alliages obtenus | |
FR2490013A1 (fr) | Dispositif amorphe photosensible a cellules multiples | |
US5981934A (en) | Photovoltaic element having a transparent conductive layer with specified fractal dimension and fractal property | |
FR2490019A1 (fr) | Procede et dispositif pour augmenter l'intervalle de bandes d'alliages amorphes photosensibles et alliages obtenus | |
EP1346416A2 (fr) | Dispositif photovolta que formant vitrage | |
FR2945670A1 (fr) | Dispositif photovoltaique et procede de fabrication | |
WO2015162343A1 (fr) | Dispositif d'affichage à cellules photovoltaïques intégrées avec luminosité et réflectivité améliorées | |
US20110030790A1 (en) | Solar cell modules and methods of manufacturing the same | |
FR2673725A1 (fr) | Procede de detection de la presence d'impuretes sur des surfaces. | |
WO2015040288A1 (fr) | Dispositif catadioptrique améliorant la visualisation d'une image placée devant un capteur solaire | |
FR2545271A1 (fr) | Dispositif de production d'images presentant un rendement quantique ameliore et son procede de fabrication | |
FR2490017A1 (fr) | Procede de fabrication d'alliages de germanium amorphes photosensibles, dispositif pour la mise en oeuvre du procede et alliages obtenus | |
JP2004516668A5 (xx) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20030718 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: ENERGY SYSTEMS INTERNATIONAL BV |
|
17Q | First examination report despatched |
Effective date: 20070220 |
|
PUAJ | Public notification under rule 129 epc |
Free format text: ORIGINAL CODE: 0009425 |
|
32PN | Public notification |
Free format text: CONSTATATION DE PERTE D'UNE DROIT CONFORMEMENT A LA REGLE 112(1) CBE EPO 2524 21.09.10 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20100701 |