EP1318605A3 - Halbsinuswellen-Resonanztreiberschaltung - Google Patents
Halbsinuswellen-Resonanztreiberschaltung Download PDFInfo
- Publication number
- EP1318605A3 EP1318605A3 EP02079792A EP02079792A EP1318605A3 EP 1318605 A3 EP1318605 A3 EP 1318605A3 EP 02079792 A EP02079792 A EP 02079792A EP 02079792 A EP02079792 A EP 02079792A EP 1318605 A3 EP1318605 A3 EP 1318605A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- sine wave
- half sine
- drive circuit
- resonant drive
- wave resonant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004064 recycling Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7882 | 2001-12-06 | ||
US10/007,882 US6570777B1 (en) | 2001-12-06 | 2001-12-06 | Half sine wave resonant drive circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1318605A2 EP1318605A2 (de) | 2003-06-11 |
EP1318605A3 true EP1318605A3 (de) | 2005-07-13 |
Family
ID=21728606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02079792A Withdrawn EP1318605A3 (de) | 2001-12-06 | 2002-11-19 | Halbsinuswellen-Resonanztreiberschaltung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6570777B1 (de) |
EP (1) | EP1318605A3 (de) |
JP (1) | JP2003224966A (de) |
KR (1) | KR20030047762A (de) |
CN (1) | CN1423418A (de) |
TW (1) | TW587368B (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10161743B4 (de) * | 2001-12-15 | 2004-08-05 | Hüttinger Elektronik GmbH & Co. KG | Hochfrequenzanregungsanordnung |
US7167043B2 (en) * | 2003-11-24 | 2007-01-23 | International Rectifier Corporation | Decoupling circuit for co-packaged semiconductor devices |
GB2433381B (en) * | 2005-12-16 | 2008-03-05 | Nicholas Patrick Roland Hill | Resonant circuits |
WO2007082090A2 (en) * | 2006-01-12 | 2007-07-19 | Massachusetts Institute Of Technology | Methods and apparatus for a resonant converter |
SG175695A1 (en) * | 2009-08-07 | 2011-12-29 | Kyosan Electric Mfg | Pulse-modulated high-frequency power control method and pulse-modulated high-frequency power source device |
TWI496395B (zh) * | 2011-10-28 | 2015-08-11 | Richtek Technology Corp | 功率因數改善電路及方法以及應用該功率因數改善電路的離線式轉換器 |
ITRE20120021A1 (it) * | 2012-04-02 | 2013-10-03 | Igor Spinella | Metodo ed apparato per il trasferimento di potenza elettrica |
JP5915428B2 (ja) * | 2012-07-12 | 2016-05-11 | ソニー株式会社 | 駆動回路、及び、駆動方法 |
JP5832398B2 (ja) * | 2012-09-10 | 2015-12-16 | ルネサスエレクトロニクス株式会社 | 信号伝送回路 |
WO2014067915A2 (en) * | 2012-11-02 | 2014-05-08 | Danmarks Tekniske Universitet | Self-oscillating resonant power converter |
US9882509B2 (en) | 2013-10-31 | 2018-01-30 | Mitsubishi Electric Engineering Company, Limited | Resonant type high frequency power supply device and switching circuit for resonant type high frequency power supply device |
CN104953966B (zh) * | 2015-06-16 | 2018-05-18 | 深圳市华讯方舟微电子科技有限公司 | 一种e类功率放大器的补偿电路及其器件参数获取方法 |
ITUA20161824A1 (it) * | 2016-03-18 | 2017-09-18 | Eggtronic S R L | Circuito e metodo per pilotare carichi elettrici |
JP6653285B2 (ja) * | 2017-03-21 | 2020-02-26 | 矢崎総業株式会社 | スイッチング制御装置 |
JP6812912B2 (ja) * | 2017-06-26 | 2021-01-13 | Tdk株式会社 | Fet駆動回路 |
CN109378963B (zh) * | 2018-11-26 | 2020-01-21 | 广州金升阳科技有限公司 | 一种谐振驱动电路 |
CN109787424B (zh) * | 2019-02-15 | 2020-11-17 | 广东美的暖通设备有限公司 | 整流滤波电路和位置检测模块、压缩机 |
CN111884491B (zh) * | 2020-06-23 | 2022-04-08 | 华为技术有限公司 | 一种具有能量回收功能的驱动电路及开关电源 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4967109A (en) * | 1989-12-08 | 1990-10-30 | General Electric Company | High efficiency gate driver circuit for a high frequency converter |
US5023566A (en) * | 1989-12-21 | 1991-06-11 | General Electric Company | Driver for a high efficiency, high frequency Class-D power amplifier |
US5204561A (en) * | 1989-07-17 | 1993-04-20 | Sgs-Thomson Microelectronics S.A. | Gate control circuit for mos transistor |
US5804943A (en) * | 1995-05-12 | 1998-09-08 | Texas Instruments Incorporated | Resonant bilateral charging and discharging circuit |
WO2001001574A1 (en) * | 1999-06-24 | 2001-01-04 | Koninklijke Philips Electronics N.V. | High efficiency high frequency resonant gate driver for power converter |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1406895A (en) * | 1972-11-24 | 1975-09-17 | Texas Instruments Ltd | Transistor television line scan deflection circuit |
JPS57138868A (en) * | 1981-02-17 | 1982-08-27 | Toshiba Corp | Voltage resonance type high frequency switching circuit |
US5056031A (en) * | 1988-11-12 | 1991-10-08 | Kabushiki Kaisha Toyota Chuo Kenyusho | Apparatus for detecting the collision of moving objects |
US5359244A (en) | 1992-07-31 | 1994-10-25 | Sgs-Thomson Microelectronics, Inc. | Gate drive circuit for a MOS power transistor |
KR100219314B1 (ko) * | 1992-09-25 | 1999-09-01 | 무라따 미치히로 | 공진형 전원 회로 |
EP0678984B1 (de) | 1994-04-15 | 2000-07-26 | STMicroelectronics S.r.l. | Schaltung zur Verschiebung des Signalpegels von hohem auf ein niedriges Potential |
US5475296A (en) | 1994-04-15 | 1995-12-12 | Adept Power Systems, Inc. | Digitally controlled switchmode power supply |
JP3260036B2 (ja) | 1994-06-06 | 2002-02-25 | 株式会社東芝 | 電圧駆動形電力用スイッチ素子のゲート駆動回路 |
US5602505A (en) | 1994-10-28 | 1997-02-11 | Caterpillar Inc. | Gate drive circuit |
US5572095A (en) * | 1995-07-21 | 1996-11-05 | Apple Computer, Inc. | Method and apparatus for driving deflection and high voltage stages in a video display |
EP0823812B1 (de) * | 1996-08-07 | 2002-04-10 | Victor Company Of Japan, Ltd. | Horizontale S-Form-Korrektionsschaltung |
KR100224103B1 (ko) * | 1996-12-14 | 1999-10-15 | 윤종용 | 공진형 전원 스위치장치 |
US5926093A (en) * | 1997-08-15 | 1999-07-20 | Checkpoint Systems, Inc. | Drive circuit for reactive loads |
DE19855615A1 (de) * | 1997-12-03 | 1999-06-10 | Fuji Electric Co Ltd | Schaltnetzteil |
KR100433799B1 (ko) | 1998-12-03 | 2004-06-04 | 가부시키가이샤 히타치세이사쿠쇼 | 전압구동형 스위칭 소자의 게이트 구동회로 |
US6208185B1 (en) | 1999-03-25 | 2001-03-27 | Wisconsin Alumni Research Corporation | High performance active gate drive for IGBTs |
-
2001
- 2001-12-06 US US10/007,882 patent/US6570777B1/en not_active Expired - Fee Related
-
2002
- 2002-11-19 EP EP02079792A patent/EP1318605A3/de not_active Withdrawn
- 2002-12-04 JP JP2002351990A patent/JP2003224966A/ja active Pending
- 2002-12-05 KR KR1020020076890A patent/KR20030047762A/ko not_active Application Discontinuation
- 2002-12-05 CN CN02155909A patent/CN1423418A/zh active Pending
- 2002-12-06 TW TW091135466A patent/TW587368B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5204561A (en) * | 1989-07-17 | 1993-04-20 | Sgs-Thomson Microelectronics S.A. | Gate control circuit for mos transistor |
US4967109A (en) * | 1989-12-08 | 1990-10-30 | General Electric Company | High efficiency gate driver circuit for a high frequency converter |
US5023566A (en) * | 1989-12-21 | 1991-06-11 | General Electric Company | Driver for a high efficiency, high frequency Class-D power amplifier |
US5804943A (en) * | 1995-05-12 | 1998-09-08 | Texas Instruments Incorporated | Resonant bilateral charging and discharging circuit |
WO2001001574A1 (en) * | 1999-06-24 | 2001-01-04 | Koninklijke Philips Electronics N.V. | High efficiency high frequency resonant gate driver for power converter |
Non-Patent Citations (2)
Title |
---|
MAKSIMOVIC D ED - INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS: "A MOS gate drive with resonant transitions", PROCEEDINGS OF THE ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE. MASSACHUSETTS, 25 - 27 JUNE, 1991, NEW YORK, IEEE, US, vol. CONF. 22, 24 June 1991 (1991-06-24), pages 527 - 532, XP010048340, ISBN: 0-7803-0090-4 * |
WEINBERG S H ED - INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS: "A NOVEL LOSSLESS RESONANT MOSFET DRIVER", PROCEEDINGS OF THE ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE (PESC). TOLEDO, JUNE 29 - JULY 3, 1992, NEW YORK, IEEE, US, vol. VOL. 2 CONF. 23, 29 June 1992 (1992-06-29), pages 1003 - 1010, XP000369120, ISBN: 0-7803-0695-3 * |
Also Published As
Publication number | Publication date |
---|---|
TW587368B (en) | 2004-05-11 |
US20030107413A1 (en) | 2003-06-12 |
KR20030047762A (ko) | 2003-06-18 |
TW200301618A (en) | 2003-07-01 |
EP1318605A2 (de) | 2003-06-11 |
JP2003224966A (ja) | 2003-08-08 |
US6570777B1 (en) | 2003-05-27 |
CN1423418A (zh) | 2003-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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AK | Designated contracting states |
Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
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AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR |
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AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
AKX | Designation fees paid | ||
REG | Reference to a national code |
Ref country code: DE Ref legal event code: 8566 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20060114 |